70 PhDs classified by most recent registration date since 1996 - Search criterias:

Technological developments of components based on GaN on Silicon for the manufacture of power amplifiers for 5G and + high-speed telecom networks

Photo Elodie Carneiro
  • PhD student : Elodie Carneiro
  • PhD advisor : Farid Medjdoub (IEMN)
  • University : Lille
  • Date of defence : 18/06/2024

Epitaxial growth of HEMTs ScAlN / GaN heterostructures

Photo Caroline Elias
  • PhD student : Caroline Elias
  • PhD advisor : Yvon Cordier
  • University : UCA
  • Date of defence : 18/12/2023

Integrated photonics with III-nitride semiconductors

Photo Nagesh Bhat
  • PhD student : Nagesh Bhat
  • PhD advisor : Philippe Boucaud
  • University : UCA
  • Date of defence : 11/12/2023

Flexible nanowire-based light emitting diodes

Photo Julien Bosch
  • PhD student : Julien Bosch
  • PhD advisor : Blandine Alloing
  • University : UCA
  • Date of defence : 06/12/2023

From nano heteroepitaxy to micro LEDs based on GaN

Photo Kilian Baril
  • PhD student : Kilian Baril
  • PhD advisor : Jesús Zúñiga-Pérez
  • University : UCA
  • Date of defence : 23/11/2023

GaN-based single-photon emitters at telecom wavelengths: electrical injection and room-temperature operation

Photo Max Meunier
  • PhD student : Max Meunier
  • PhD advisor : Jesús Zúñiga-Pérez
  • University : UCA
  • Date of defence : 27/10/2023

Polaris laser injected electrically into a GaN-based nanowire [cotutelle]

Photo Léo Mallet-Dida

Compliant metasurfaces and its applications

Photo Sandeep Yadav Golla
  • PhD student : Sandeep Yadav Golla
  • PhD advisor : Patrice Genevet
  • University : UCA
  • Date of defence : 14/10/2021

Growth and characterization of ZnMg-oxynitrides: from materials science to fabrication of transistors

Photo Philipp John
  • PhD student : Philipp John
  • PhD advisor : Jesús Zúñiga-Pérez
  • University : UCA
  • Date of defence : 29/06/2021

Controlling nonlineair interaction with metasurfaces

Photo Rajat Sawant
  • PhD student : Rajat Sawant
  • PhD advisor : Patrice Genevet
  • University : Nice
  • Date of defence : 15/12/2020

Epitaxy of innovative GaN HEMT heterostructures for high frequency applications [cotutelle]

Photo Nadia El Bondry
  • PhD student : Nadia El Bondry
  • PhD advisor : Yvon Cordier
  • University : Nice
  • Date of defence : 08/12/2020

Tunnel junctions in nitride heterostructures for LED applications

Photo Victor Fan Arcara
  • PhD student : Victor Fan Arcara
  • PhD advisor : Jean-Yves Duboz
  • University : Nice
  • Date of defence : 10/03/2020

Integration of metasurfaces in optoelectronic devices and control of laser emission

Photo Mario Ferraro
  • PhD student : Mario Ferraro
  • PhD advisor : Patrice Genevet
  • University : Nice
  • Date of defence : 14/12/2019

All-semiconductor metasurfaces for visible and UV wavelengths

Photo Gauthier Brière
  • PhD student : Gauthier Brière
  • PhD advisor : Patrice Genevet
  • University : Nice
  • Date of defence : 28/11/2019

Towards a Zinc Oxide based quantum cascade device

Photo Nolwenn Le Biavan
  • PhD student : Nolwenn Le Biavan
  • PhD advisor : Jean-Michel Chauveau
  • University : Nice
  • Date of defence : 13/11/2019

Semipolar GaN pseudo-substrates

Photo Rami Mantach
  • PhD student : Rami Mantach
  • PhD advisor : Philippe Vennéguès
  • University : Nice
  • Date of defence : 10/09/2019

Optimization and analysis of electronic transport properties in structures based on AlInN/GaN materials

Photo Soumaya Latrach

AlGaN quantum dot emitters for ultra-violet light emitting diodes

Photo Samuel Matta
  • PhD student : Samuel Matta
  • PhD advisor : Bernard Gil (L2C)
  • University : Montpelier
  • Date of defence : 02/05/2018

AlGaN quantum dot emitters for ultra-violet light emitting diodes

Photo Samuel Matta

Nonlinear optics in AlGaN

Photo Maksym Gromovyi

Nonlinear optics in AlGaN

Photo Maksym Gromovyi
  • PhD student : Maksym Gromovyi
  • PhD advisor : Jean-Yves Duboz
  • University : Nice-Sophia Antipolis
  • Date of defence : 30/03/2018

Direct growth of graphene by chemical vapor deposition on silicon carbide and III-nitrides

Photo Roy Dagher
  • PhD student : Roy Dagher
  • PhD advisor : Yvon Cordier
  • University : Nice-Sophia Antipolis
  • Date of defence : 22/09/2017

Co-Intégration of GaN-HEMTs transistors and silicon-CMOS

Photo Rémi Comyn
  • PhD student : Rémi Comyn
  • PhD advisor : Yvon Cordier
  • University : Nice-Sophia Antipolis
  • Date of defence : 08/12/2016

Structural studies on couches of element III nitrides on oxydes substrates

Photo Rami Khazaka
  • PhD student : Rami Khazaka
  • PhD advisor : Daniel Alquier (Univ. Tours)
  • University : François Rabelais de Tours
  • Date of defence : 29/11/2016

Structural studies on couches of element III nitrides on oxydes substrates

Photo Natalia Stolyarchuk
  • PhD student : Natalia Stolyarchuk
  • PhD advisor : Philippe Vennéguès
  • University : Nice-Sophia Antipolis
  • Date of defence : 17/11/2016

Vapour phase epitaxy of Silicon Carbide for electronic application

Photo Roxana Arvinte
  • PhD student : Roxana Arvinte
  • PhD advisor : Marcin Zielinski
  • University : Nice-Sophia Antipolis
  • Date of defence : 08/11/2016

Growth and fabrication of semi- and non-polar LEDs on Si

Photo Michel Khoury
  • PhD student : Michel Khoury
  • PhD advisor : Jesús Zúñiga-Pérez
  • University : Nice-Sophia Antipolis
  • Date of defence : 22/02/2016

Semi-polar GaN - way to go to the substrate

Photo Florian Tendille
  • PhD student : Florian Tendille
  • PhD advisor : Philippe De Mierry
  • University : Nice-Sophia Antipolis
  • Date of defence : 24/11/2015

Development of structures for MEMS resonator application based on GaN HEMTs on silicon substrate

Photo Paul Leclaire
  • PhD student : Paul Leclaire
  • PhD advisor : Didier Théron
  • University : Lille
  • Date of defence : 10/11/2015

GaN growth on nanostructured silicon

Photo Guillaume Gommé
  • PhD student : Guillaume Gommé
  • PhD advisor : Yvon Cordier
  • University : Nice-Sophia Antipolis
  • Date of defence : 17/12/2014

Structural and optical characterization of green-yellow light emitting devices with high Indium composition (Ga,In)N quantum wells

Photo Sakhawat Hussain
  • PhD student : Sakhawat Hussain
  • PhD advisor : Philippe Vennéguès
  • University : Nice-Sophia Antipolis
  • Date of defence : 12/12/2014

Growth and characterization of GaN nanowires

Photo Pierre-Marie Coulon

Development of III-N High Electron Mobility Transistor heterostructures for millimeter wave range applications

Photo Stéphanie Rennesson

Studies of ZnO based microcavities working in the strong coupling regime

Photo Feng Li
  • PhD student : Feng Li
  • PhD advisor : Jean-Yves Duboz
  • University : Nice-Sophia Antipolis
  • Date of defence : 29/11/2013

Nonpolar growth of GaN/ZnO heterostructures for the application of optoelectronics

Photo YuanYang Xia
  • PhD student : YuanYang Xia
  • PhD advisor : Jean Massies
  • University : Nice-Sophia Antipolis
  • Date of defence : 01/10/2013

Growth of GaN on patterned Si substrate

Photo Tasnia Hossain
  • PhD student : Tasnia Hossain
  • PhD advisor : Yvon Cordier
  • University : Nice-Sophia Antipolis
  • Date of defence : 27/11/2012

Fabrication and characterization of short wavelength nanoPicturenic structures integrated on silicon

Photo Mohammad Junaebur Rashid
  • PhD student : Mohammad Junaebur Rashid
  • PhD advisor : Fabrice Semond
  • University : Nice-Sophia Antipolis
  • Date of defence : 27/11/2012

GaN/(Al,Ga)N quantum dots for ultra-violet emission

Photo Abdelkarim Kahouli
  • PhD student : Abdelkarim Kahouli
  • PhD advisor : Jean Massies
  • University : Nice-Sophia Antipolis
  • Date of defence : 28/09/2012

Development of a GaN vertical HEMT for high power applications

Photo Martin Jouk
  • PhD student : Martin Jouk
  • PhD advisor : Yvon Cordier
  • University : Nice-Sophia Antipolis
  • Date of defence : 04/04/2012

Development of a GaN vertical HEMT for high power applications

Photo Martin Jouk
  • PhD student : Martin Jouk
  • PhD advisor : Yvon Cordier
  • University : Nice-Sophia Antipolis
  • Date of defence : 04/04/2012

Epitaxial growth of non polar nitrides and optical properties of GaN/AlGaN and (Al,Ga,In)N/(Al,Ga)N quantum wells and quantum dots

Photo Nasser Kriouche
  • PhD student : Nasser Kriouche
  • PhD advisor : Jean Massies
  • University : Nice-Sophia Antipolis
  • Date of defence : 09/12/2011

Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures

Photo Maxim Korytov
  • PhD student : Maxim Korytov
  • PhD advisor : Philippe Vennéguès
  • University : Nice-Sophia Antipolis
  • Date of defence : 26/10/2010

Fabrication and study of nitride-based photonic nanocavities containing GaN quantum dots for UV emitters integrated on silicon

Photo Sylvain Sergent
  • PhD student : Sylvain Sergent
  • PhD advisor : Jean-Yves Duboz
  • University : Nice-Sophia Antipolis
  • Date of defence : 19/10/2010

Elaboration of laser structure based on element III nitrides emitting in the green

Photo Pierre Demolon
  • PhD student : Pierre Demolon
  • PhD advisor : Jean-Yves Duboz
  • University : Nice-Sophia Antipolis
  • Date of defence : 01/07/2010

Study of growth and properties of Aluminium Nitride grown on silicon substrate by molecular beam epitaxy : application to bulk acoustic wave resonators and prospects regarding integrated heterostructures on silicon

Photo Jean-Christophe Moreno
  • PhD student : Jean-Christophe Moreno
  • PhD advisor : Fabrice Semond
  • University : Nice-Sophia Antipolis
  • Date of defence : 17/12/2009

Optimization of the growth by ammonia source molecular beam epitaxy of (Al,Ga)N/GaN high electron mobility transistors on (111) oriented silicon substrate

Photo Nicolas Baron
  • PhD student : Nicolas Baron
  • PhD advisor : Yvon Cordier
  • University : Nice-Sophia Antipolis
  • Date of defence : 21/09/2009

Growth and caracterisation of heterostructures based of GaN plan A

Photo Tobias Guehne

Growth and caracterisation of heterostructures based of GaN plan A

Photo Tobias Guehne
  • PhD student : Tobias Guehne
  • PhD advisor : Jean-Yves Duboz
  • University : Nice-Sophia Antipolis
  • Date of defence : 13/10/2008

Growth by molecular beam epitaxy of quantic InGaAsN/GaAs heterostructures

Photo Maxime Hugues

Growth of heterostructures based of GaN on Silicium (100) substrate

Photo Sylvain Joblot
  • PhD student : Sylvain Joblot
  • PhD advisor : Yvon Cordier
  • University : Nice-Sophia Antipolis
  • Date of defence : 27/11/2007

Elaboration of GaN pseudo-substrates

Photo Mohamed Azize
  • PhD student : Mohamed Azize
  • PhD advisor : Pierre Gibart
  • University : Montpellier
  • Date of defence : 01/06/2006

First step of GaN growth on Si(111) : the AlN nucleation

Photo Arnaud Le Louarn
  • PhD student : Arnaud Le Louarn
  • PhD advisor : Jean Massies
  • University : Lille
  • Date of defence : 15/02/2006

Realization of GaN structures with periodic polarity for non linear optics applications

Photo Sébastien Pezzagna
  • PhD student : Sébastien Pezzagna
  • PhD advisor : Jean Massies
  • University : Nice-Sophia Antipolis
  • Date of defence : 14/12/2005

White monolithic electroluminescent diodes

Photo Amélie Dussaigne
  • PhD student : Amélie Dussaigne
  • PhD advisor : Nicolas Grandjean
  • University : Nice-Sophia Antipolis
  • Date of defence : 13/04/2005

Stress relaxation in thick (Al,Ga)N heterostructures : an innovative way to grow resonant cavity light emitting diodes

Photo Jean-Marc Béthoux
  • PhD student : Jean-Marc Béthoux
  • PhD advisor : Jean-Yves Duboz
  • University : Nice-Sophia Antipolis
  • Date of defence : 24/09/2004

Development, design and implementation of (Al, Ga) N / GaN heterostructures grown by molecular beam epitaxy on Si (111)

Photo Franck Natali
  • PhD student : Franck Natali
  • PhD advisor : Jean Massies
  • University : Nice-Sophia Antipolis
  • Date of defence : 17/12/2003

Hetero-epitaxy of gallium nitride on Si (111)

Photo Eric Feltin
  • PhD student : Eric Feltin
  • PhD advisor : Pierre Gibart
  • University : Nice-Sophia Antipolis
  • Date of defence : 20/01/2003

III-V nitride compounds: towards 1.55 μm optoelectronics on GaAs

Photo Marie-Amandine Pinault
  • PhD student : Marie-Amandine Pinault
  • PhD advisor : Eric Tournie
  • University : Nice-Sophia Antipolis
  • Date of defence : 20/12/2002

Preparation of light emitting diodes and selective mirrors nitrides based group-III for diode resonant cavity

Photo David Schenk
  • PhD student : David Schenk
  • PhD advisor : Pierre Gibart
  • University : Nice-Sophia Antipolis
  • Date of defence : 19/04/2002

Nanostructures (Al, Ga, In) N: epitaxial growth in molecular beams, optical properties, application to light emitting diodes

Photo Benjamin Damilano

Injection and recombination mechanisms within the LED-based III nitrides

Photo Stéphane Dalmasso
  • PhD student : Stéphane Dalmasso
  • PhD advisor : Mathieu Leroux
  • University : Nice-Sophia Antipolis
  • Date of defence : 25/10/2001

Visible and ultraviolet optoelectronicbased on wide band gap II-VI semiconductors

Photo Florence Vigué
  • PhD student : Florence Vigué
  • PhD advisor : Jean-Pierre Faurie
  • University : Nice-Sophia Antipolis
  • Date of defence : 03/07/2001

Growth and characterization of ZnBeSe heterostructures with wide bandgap

Photo Catherine Chauvet-Guibert
  • PhD student : Catherine Chauvet-Guibert
  • PhD advisor : Jean-Pierre Faurie
  • University : Nice-Sophia Antipolis
  • Date of defence : 05/01/2001

Component III nitride growth by Vapor Phase Epitaxy of organometallic substrates on 6H-SiC and Si (111): application to field effect transistors

Photo Hacène Lahrèche
  • PhD student : Hacène Lahrèche
  • PhD advisor : Pierre Gibart
  • University : J. Fournier, Grenoble I
  • Date of defence : 20/11/2000

Application of local probe microscopy to study the surface of GaN (0001)

Photo Stéphane Vézian

Chemical beam Epitaxy : application to the growth of group III mixed arsenides-phosphides and nitrides structures

Photo Magali Mesrine
  • PhD student : Magali Mesrine
  • PhD advisor : Jean Massies
  • University : Nice-Sophia Antipolis
  • Date of defence : 01/02/1999

Optimized growth of GaN and AlxGa1-xN for the development of optoelectronic components

Photo Soufien Haffouz
  • PhD student : Soufien Haffouz
  • PhD advisor : Pierre Gibart
  • University : J. Fournier, Grenoble I
  • Date of defence : 14/01/1999

Growth and characterization of Zn (Mg) BeSe heterostructures, new materials for blue laser emission

Photo Valérie Bousquet
  • PhD student : Valérie Bousquet
  • PhD advisor : Jean-Pierre Faurie
  • University : Nice-Sophia Antipolis
  • Date of defence : 30/10/1998

Study of II-VI ZnSe-based semiconductor heterostructures developed in Molecular Beam Epitaxy

Photo Céline Ongaretto
  • PhD student : Céline Ongaretto
  • PhD advisor : Jean-Pierre Faurie
  • University : Nice-Sophia Antipolis
  • Date of defence : 19/06/1997

Design and fabrication of blue laser-based on heterostructures of II-VI semiconductors

Photo Christian Morhain
  • PhD student : Christian Morhain
  • PhD advisor : Jean-Pierre Faurie
  • University : Nice-Sophia Antipolis
  • Date of defence : 19/12/1996