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⋄ Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE

Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing
Cryst. Growth Des., 22, 5206, (2022)

⋄ Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 106, 035429, (2022)

⋄ Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, and B. Gil,
J. Appl. Phys., 132, 035302, (2022)
Abstract online (HAL) : click here...

⋄ Comparison of lasing characteristics of GaN microdisks with different structures

Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
J. Phys. D: Appl. Phys., 55, 355107, (2022)

⋄ Low-loss GaN-on-insulator platform for integrated photonics

M. GROMOVYI, M. EL KURDI, X. CHECOURY, E. HERTH,F. TABATABA-VAKILI, N. BHAT, A. COURVILLE, F. SEMOND, AND P. BOUCAUD
Opt. Express, 30, 20737, (2022)
Abstract online (HAL) : click here...

⋄ Exciton ionization induced by intersubband absorption in nonpolar ZnO-ZnMgO quantum wells at room temperature

A. Jollivet, P. Quach, M. Tchernycheva, R. Ferreira, E. Di Russo, L. Rigutti, B. Vinter, N. le Biavan, D. Lefebvre, M. Hugues, J. M. Chauveau, and F. H. Julien
Phys. Rev. B, 105, 195143, (2022)

⋄ Space and Time Modulations of Light with Metasurfaces: Recent Progress and Future Prospects

Elena Mikheeva, Christina Kyrou, Fouad Bentata, Samira Khadir, Sébastien Cueff, and Patrice Genevet
ACS Photonics, -, -, (2022)

⋄ Porous Nitride LEDs

Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva
ACS Photonics, 9, 1256, (2022)
Abstract online (HAL) : click here...

⋄ The low temperature limit of the excitonic Mott density in GaN: an experimental reassessment

Léo Mallet-Dida, Pierre Disseix, François Réveret, François Médard, Blandine Alloing, Jesús Zúñiga-Pérez and Joël Leymarie
New J. Phys., 24, 033031, (2022)
Abstract online (HAL) : click here...

⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks

Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
Opt. Lett., 47, 1521, (2022)
Abstract online (HAL) : click here...

⋄ Vectorial metasurface holography

Qinghua Song, Xingsi Liu, Cheng-Wei Qiu, and Patrice Genevet
Appl. Phys. Rev., 9, 011311 , (2022)

⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188, 108210, (2022)

⋄ Up to 300 K lasing with GeSn-On-Insulator microdisk resonators

A. Bjelajac, M. Gromovyi, E. Sakat, B. Wang, G. Patriarche, N. Pauc, V. Calvo, P. Boucaud, F. Boeuf, A. Chelnokov, V. Reboud, M. Frauenrath, J.-M. Hartmann, and M. El Kurdi
Opt. Express, 30, 3954, (2022)
Abstract online (HAL) : click here...

⋄ Metasurface-enhanced light detection and ranging technology

Renato Juliano Martins, Emil Marinov, M. Aziz Ben Youssef, Christina Kyrou, Mathilde Joubert, Constance Colmagro, Valentin Gâté, Colette Turbil, Pierre-Marie Coulon, Daniel Turover, Samira Khadir, Massimo Giudici, Charalambos Klitis, Marc Sorel & Patrice Genevet
Nat. Commun, 13, 5724 , (2022)

⋄ AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T. Huong Ngo, M.A. Daher, M. Zielinski, D. Alquier, J.C. De Jaeger and Y. Cordier
Mat. Sci. For., 1062, 482-486, (2022)

⋄ Oxygen Isotope Variations in Mg-rich Olivines from Type I Chondrules in Carbonaceous Chondrites

G. Libourel, K. Nagashima, M. Portail, A.N. Krot
Geochim. Cosmochim. Acta, 319, 73-93, (2022)

⋄ A New Approach in the Field of Hydrogen Gas Sensing Using MEMS Based 3C-SiC Microcantilevers

P. Shanmugam, L. Iglesias, M. Portail, I. Dufour, D. Certon, D. Alquier, J.F. Michaud
Mat. Sci. For., 1062, 593-597, (2022)

⋄ Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material

M. Zielinski, M. Bussel, C. Moisson, H. Mank, S. Monooye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062, 140-145, (2022)

⋄ Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride

M. Zielinski, M. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062, 84-88, (2022)

⋄ Designing SiC Based CMUT Structures: An Original Approach and Related Materials Issues

M. Portail, S. Chenot, M. Ghorbanzadeh-Bariran, R. Khazaka, L. Nguyen, D. Alquier and J.F. Michaud
Mat. Sci. For., 1062, 94-98, (2022)

⋄ Susceptibility synthesis of arbitrary shaped metasurfaces

N. Lebbe, S. Lanteri, S. Y. Golla, and P. Genevet
Phys. Rev. B, 106, 035110, (2022)

⋄ Aberration-corrected large-scale hybrid metalenses

R Sawant, D Andrén, RJ Martins, S Khadir, R Verre, M Käll, & P Genevet
Optica, 8(11), 1405-1411, (2021)

⋄ Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy

M. Nemoz, F. Semond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche,J. Zúñiga-Pérez
Superlattices Microstruct., 150, 106801, (2021)
Abstract online (HAL) : click here...

⋄ Use of interface phonon-polaritons for the alloy determination in ZnO/(Zn,Mg)O multiple quantum wells

M.Montes Bajo, J.Tamayo-Arriola, N.Le Biavan, E.Martínez Castellano, D.Lefebvre, M.Hugues, J.-M.Chauveau, A.Hierro
Appl. Surf. Sci., 567, 150816, (2021)
Abstract online (HAL) : click here...

⋄ Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics

Morteza Monavaria, Jiaming Xu, Michel Khoury, Feng Wu,Philippe De Mierry,Philippe Vennéguès , Mikhail A. Belkin, and James S. Speck
Phys. Rev. Applied, 16, 054040, (2021)
Abstract online (HAL) : click here...

⋄ GeSnOI mid-infrared laser technology

B. Wang, E. Sakat, E. Herth, M. Gromovyi, A. Bjelajac, J. Chaste, G. Patriarche, P. Boucaud, F. Boeuf, N. Pauc, V. Calvo, J. Chrétien, M. Frauenrath, A. Chelnokov, V. Reboud, J.-M. Hartmann, M. El Kurdi
Light Sci Appl, 10, 232, (2021)
Abstract online (HAL) : click here...

⋄ Stability of the threshold voltage in fluorine-implanted normally‑off AlN/GaN HEMTs co‑integrated with commercial normally‑on GaN HEMT technology

Florent ALBANY, François LECOURT, Ewa WALASIAK, Nicolas DEFRANCE, Arnaud CURUTCHET, Hassan MAHER, Yvon CORDIER, Nathalie LABAT, Nathalie MALBERT
Microelectronics Reliabilty, 126, 114291, (2021)
Abstract online (HAL) : click here...

⋄ Optimization of metasurfaces under geometrical uncertainty using statistical learning

M. M. R. Elsawy, M. Binois, R. Duvigneau, S. Lanteri and P.Genevet
Opt. Express, 29, 29887, (2021)
Abstract online (HAL) : click here...

⋄ Epitaxial Zn3N2 thin films by molecular beam epitaxy:Structural, electrical and optical properties

P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, H. Rotella, M. Hugues, M. Grundmann, and J. Zúñiga-Pérez
J. Appl. Phys., 130, 065104, (2021)
Abstract online (HAL) : click here...

⋄ Plasmonic topological metasurface by encircling an exceptional point

Q. Song, M. Odeh, J. Zúñiga-Pérez, B. Kanté, and P. Genevet
Science, 373, 1133-1137, (2021)
Abstract online (HAL) : click here...

⋄ Reconstruction of multidimensional nonlinear polarization response of Pancharatnam-Berry metasurfaces

Z. Gao, P.Genevet, G. Li, and K. E. Dorfman
Phys. Rev. B, 104, 054303, (2021)

⋄ Whispering-gallery mode InGaN microdisks on GaN substrates

H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi
Opt. Express, 29, 21280, (2021)
Abstract online (HAL) : click here...

⋄ Multiobjective statistical learning optimization of RGB metalens

M. MR Elsawy, A. Gourdin, M. Binois, R. Duvigneau, D. Felbacq, S. Khadir, P.Genevet, S. Lanteri
ACS Photonics, 8, 8, 2498–2508, (2021)
Abstract online (HAL) : click here...

⋄ Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

N. Al Taradeh, E. Frayssinet, C. Rodriguez, F. Morancho, C. Sonneville, L.-V. Phung, A. Soltani, F. Tendille, Y. Cordier, H. Maher
Energies, 12, 4241, (2021)
Abstract online (HAL) : click here...

⋄ Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

D. Cooper, V. Fan Arcara, B. Damilano, L. Amichi, A. Mavel, et al.
J. Appl. Phys., 130 (2), 025704, (2021)
Abstract online (HAL) : click here...

⋄ Evidence of Piezoelectric Potential and Screening Effect in Single Highly Doped ZnO: Ga and ZnO: Al Nanowires by Advanced Scanning Probe Microscopy

O. Synhaivskyi, D. Albertini, P. Gaffuri, J.-M. Chauveau, V. Consonni, B. Gautier, G. Bremond
J. Phys. Chem. C, 125, 15373, (2021)
Abstract online (HAL) : click here...

⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet
Nat. Commun, 12, 3631, (2021)
Abstract online (HAL) : click here...

⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires

K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0, 0, (2021)
Abstract online (HAL) : click here...

⋄ Nanophotonics for light detection and ranging technology

I. Kim, R.J. Martins, J. Jang, T. Badloe, S. Khadir, H.Y. Jung, H. Kim, J. Kim, P. Genevet, J. Rho
Nat. Nanotechnol., , , (2021)

⋄ Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications

Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon, Mathieu Koudia, Elie Assaf, Antoine Ronda, Paola Castrucci, Maurizio De Crescenzi, Holger Vach, and Mathieu Abel
ACS Appl. Nano Mater., 4, 4462, (2021)

⋄ Polarization-insensitive 3D conformal-skin metasurface cloak

He-Xiu Xu, Guangwei Hu, Yanzhao Wang, Chaohui Wang, Mingzhao Wang, Shaojie Wang, Yongjun Huang, Patrice Genevet, , Wei Huang & Cheng-Wei Qiu
Light Sci Appl, 10, 75, (2021)

⋄ Transient birefringence and dichroism in ZnO studied with fs-time-resolved spectroscopic ellipsometry

O. Herrfurth, S. Richter, M. Rebarz, S. Espinoza, J. Zúñiga-Pérez, C. Deparis, J. Leveillee, A. Schleife, M. Grundmann, J. Andreasson, and R. Schmidt-Grund
Phys. Rev. Research , 3, 013246, (2021)
Abstract online (HAL) : click here...

⋄ Microstructure of epitaxial Mg3N2 thin films grown by MBE

P. John, P. Vennéguès, H. Rotella, C. Deparis, C. Lichtensteiger, and J. Zúñiga-Pérez
J. Appl. Phys., 129, 095303, (2021)
Abstract online (HAL) : click here...

⋄ AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts

Idriss Abid, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, Hideto Miyake and Farid Medjdoub
Electronics, 10, 635, (2021)
Abstract online (HAL) : click here...

⋄ DUV LEDs based on AlGaN Quantum Dots

Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686, 116860T, (2021)
Abstract online (HAL) : click here...

⋄ Scattering by lossy anisotropic scatterers: A modal approach

N Kossowski, Parry Y Chen, QJ Wang, P Genevet, Yonatan Sivan
J. Appl. Phys., 129, 113104, (2021)
Abstract online (HAL) : click here...

⋄ On‐Chip Generation of Structured Light Based on Metasurface Optoelectronic Integration

Qiu‐Hua Wang, Pei‐Nan Ni, Yi‐Yang Xie, Qiang Kan, Pei‐Pei Chen, Pan Fu, Jun Deng, Tai‐Lai Jin, Hong‐Da Chen, Ho Wai Howard Lee, Chen Xu and Patrice Genevet
Laser Photonics Rev., 15,3, 2000385, (2021)

⋄ Quantum sensing of a coherent single spin excitation in a nuclear ensemble

D. M. Jackson, D. A. Gangloff, J. H. Bodey, L. Zaporski, C. Bachorz, E. Clarke, M. Hugues, C. Le Gall and M. Atatüre
Nat. Phys., 17, 585, (2021)
Abstract online (HAL) : click here...

⋄ Etching of m-plane Zn(Mg)O epitaxial films and its impact on surface leakage currents

Borislav Hinkov, Hanh T Hoang, Maxime Hugues, Jean-Michel Chauveau and Gottfried Strasser
Semicond. Sci. Tech., 36, 035023, (2021)
Abstract online (HAL) : click here...

⋄ Bandwidth-unlimited polarization-maintaining metasurfaces

Q. Song, S. Khadir, S. Vézian, B. Damilano, P. D. Mierry, S. Chenot, V. Brandli and P. Genevet
Sci. Adv., 7(5), eabe1112, (2021)
Abstract online (HAL) : click here...

⋄ Terahertz Intersubband Electroluminescence from Nonpolar m-Plane ZnO Quantum Cascade Structures

B. Meng, B. Hinkov, N. Le Biavan, H.T. Hoang, D. Lefebvre, M. Hugues, D. Stark, M. Franckié, A. Torres-Pardo, J. Tamayo-Arriola, M. M. Bajo, A. Hierro, G. Strasser, J. Faist*, and J.-M. Chauveau*
ACS Photonics, 8, 343–349, (2021)
Abstract online (HAL) : click here...

⋄ Metasurface Optical Characterization Using Quadriwave Lateral Shearing Interferometry

S. Khadir, D. Andrén, R. Verre, Q. Song, S. Monneret, P. Genevet, M. Käll, and G. Baffou
ACS Photonics, 8,2, 603–613, (2021)
Abstract online (HAL) : click here...

⋄ Dynamic phase manipulation of vertical-cavity surface-emitting lasers via on-chip integration of microfluidic channels

Zhuangzhuang Zhao, Yiyang Xie, Guanzhong Pan, Peinan Ni, Qiuhua Wang, Yibo Dong, Liangchen Hu, Jie Sun, Hongda Chen, Chen Xu, and Patrice Genevet
Opt. Express, 29, 1481, (2021)

⋄ Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

F. Chiaruttini, T. Guillet, C. Brimont, D. Scalbert, S. Cronenberger, B. Jouault, P. Lefebvre, B. Damilano, and M. Vladimirova
Phys. Rev. B, 103, 045308, (2021)
Abstract online (HAL) : click here...

⋄ In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

P. Dalapati, G. Beainy, E. Di Russo, I. Blum, J. Houard, S. Moldovan, A. Vella, F. Vurpillot, N. Le Biavan, M. Hugues, J.M. Chauveau, and L. Rigutti
Phys. Rev. Applied, 15, 024014, (2021)
Abstract online (HAL) : click here...

⋄ Backward Phase-Matched Second-Harmonic Generation from Stacked Metasurfaces

T. Stolt, J. Kim, S. Héron, A. Vesala, Y. Yang, J. Mun, M. Kim, M. J. Huttunen, R. Czaplicki, M. Kauranen, J. Rho, and P. Genevet
Phys. Rev. Lett., 126, 033901, (2021)
Abstract online (HAL) : click here...

⋄ Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO

N. Temahuki, F. Jomard, A. Lusson, I. Stenger, S. Hassani, J. Chevallier, J.M. Chauveau, C. Morhain and J. Barjon
Appl. Phys. Lett., 118, 102106, (2021)
Abstract online (HAL) : click here...

⋄ Proton Energy Loss in GaN

Jean-Yves Duboz,* Julie Zucchi, Eric Frayssinet, Sébastien Chenot, Maxime Hugues, Jean-Claude Grini, and Joël Hérault
Phys. Stat. Sol. B, , 2100167, (2021)
Abstract online (HAL) : click here...

⋄ Reconfigurable Flat Optics with Programmable Reflection Amplitude Using Lithography-Free Phase-Change Materials Ultra Thin Films

S. Cueff, A. Taute, A. Bourgade, J. Lumeau, S. Monfray, Q. Song, P. Genevet, B. Devif, X. Letartre, L. Berguiga
Adv. Opt. Mater., 9, 2001291, (2021)
Abstract online (HAL) : click here...

⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier
Semicond. Sci. Tech., 36, 024001, (2020)
Abstract online (HAL) : click here...

⋄ Magnetoresistance of epitaxial GdN films

T. Maity, H. J. Trodahl, S. Granville, S. Vézian, F. Natali, and B. J. Ruck
J. Appl. Phys., 128, 213901, (2020)

⋄ Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

C. Brimont, L. Doyennette, G. Kreyder, F. Réveret, P. Disseix, F. Médard, J. Leymarie, E. Cambril, S. Bouchoule, M. Gromovyi, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, and T. Guillet
Phys. Rev. Applied, 14, 054060, (2020)
Abstract online (HAL) : click here...

⋄ Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe

E. Di Russo, P. Dalapati, J. Houard, L. Venturi, I. Blum, S. Moldovan, N. Le Biavan, D. Lefebvre, M. Hugues, J.-M. Chauveau, D. Blavette, B. Deconihout, A. Vella, F. Vurpillot, and L. Rigutti
Nano Lett., 20, 8733, (2020)
Abstract online (HAL) : click here...

⋄ Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

P. Ruterana, M. Morales, N. Chery, T.H. Ngo, M.-P. Chauvat, K. Lekhal, B. Damilano, and B. Gil
J. Appl. Phys., 128, 223102, (2020)
Abstract online (HAL) : click here...

⋄ New barrier layer design for the fabrication of GaN-MIS-HEMT Normally-off transistor

F. Cozette, B. Hassan, C. Rodriguez, E. Frayssinet, R. Comyn, F. Lecourt, N. Defrance, N. Labat, F. Boone, A. Soltani, A. Jaouad, Y. Cordier, H. Maher
Semicond. Sci. Tech., 36, 034002, (2020)

⋄ Paper Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

L. Abou-Hamdan, S. Hamyeh, A. Iskandar, R. Tauk, J. Brault, M. Tabbal, P.M. Adam, M. Kazan
Nanotechnology, 32, 115703, (2020)
Abstract online (HAL) : click here...

⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover
Sci Rep., 10, 18919, (2020)
Abstract online (HAL) : click here...

⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping

Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet
Appl. Phys. Express., 13, 115504, (2020)
Abstract online (HAL) : click here...

⋄ Reflectivity and Photoreflectivity Spectra of Structures with Quantum Wells Based on ZnO

A.M. Klyuev, N.G. Filosofov, A. Yu Serov, V.F. Agekyan, C. Morhain, V.P. Kochereshko
Phys. Solid State, 62(11), 2012-2015, (2020)

⋄ UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

J. Brault, M. Al Khalfioui, S. Matta, T.H. Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil
Crystals, 10, 1097, (2020)
Abstract online (HAL) : click here...

⋄ Full InGaN red light emitting diodes

A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A.M. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J.C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta
J. Appl. Phys., 128, 135704, (2020)
Abstract online (HAL) : click here...

⋄ Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide bandgap oxide materials

J. Borgersen, L. Vines, Y. K. Frodason, A. Kuznetsov, H. von Wenckstern, M Grundmann, M. Allen, J. Zúñiga-Pérez and K. M. Johansen
J. Phys. Cond. Mat., 32, 415704, (2020)

⋄ Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

T.H. Ngo, R. Comyn, E. Frayssinet, H. Chauveau, S. Chenot, B. Damilano, F. Tendille, B. Beaumont, J.-P. Faurie, N. Nahas, Y. Cordier
J. Cryst. Growth, 552, 125911, (2020)
Abstract online (HAL) : click here...

⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers

F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 117, 121103, (2020)
Abstract online (HAL) : click here...

⋄ Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Giannazzo, Filippo; Dagher, Roy; Schilirò, Emanuela; Panasci, Salvatore; Greco, Giuseppe; Nicotra, Giuseppe; Roccaforte, Fabrizio; Agnello, Simonpietro; Brault, Julien; Cordier, Yvon; Michon, Adrien
Nanotechnology, 32, 015705, (2020)
Abstract online (HAL) : click here...

⋄ Revealing topological phase in Pancharatnam–Berry metasurfaces using mesoscopic electrodynamics

Z Gao, S. Golla, R. Sawant, V. Osipov, G. Briere, S. Vezian, B. Damilano, P. Genevet and K. E. Dorfman
Nanophotonics, 9(16), 4711, (2020)

⋄ Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

A. Elbaz, R. Arefin, E. Sakat, B. Wang, E. Herth, G. Patriarche, A. Foti, R. Ossikovski, S. Sauvage, X. Checoury, K. Pantzas, I. Sagnes, J. Chrétien, L. Casiez, M. Bertrand, V. Calvo, N. Pauc, A. Chelnokov, P. Boucaud, F. Boeuf, V. Reboud, J.M. Hartmann, M. El Kurdi
ACS Photonics, 7, 2713, (2020)
Abstract online (HAL) : click here...

⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Opt. Lett., 45, 4276, (2020)
Abstract online (HAL) : click here...

⋄ Independent phase modulation for quadruplex polarization channels enabled by chirality-assisted geometric-phase metasurfaces

Yueyi Yuan, Kuang Zhang, Badreddine Ratni, Qinghua Song, Xumin Ding, Qun Wu, Shah Nawaz Burokur & Patrice Genevet
Nat. Commun, 11, 4186, (2020)

⋄ Numerical Optimization Methods for Metasurfaces

M.M.R. Elsawy, S. Lanteri, R. Duvigneau, J.A. Fan, P. Genevet
Laser Photonics Rev., 2020, 1900445, (2020)
Abstract online (HAL) : click here...

⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras
J. Appl. Phys., 128, 085703, (2020)
Abstract online (HAL) : click here...

⋄ Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

M. Bah, D. Valente, M. Lesecq, N. Defrance, M. Garcia Barros, J-C. De Jaeger, E. Frayssinet, R. Comyn, T.H. Ngo, D. Alquier, Y. Cordier
Sci Rep., 10, 14166, (2020)
Abstract online (HAL) : click here...

⋄ Nonlocality Induced Cherenkov Threshold

Hu, H., Lin, X., Zhang, J., Liu, D., Genevet, P., Zhang, B., Luo, Y.
Laser Photonics Rev., 2020, 2000149 , (2020)

⋄ A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopy

J. Houard, A. Normand, E. Di Russo, C. Bacchi, P. Dalapati, G. Beainy, S. Moldovan, G. da Costa, F. Delaroche, C. Vaudolon, J.M. Chauveau, Maxime Hugues, D. Blavette, B. Déconihout, A. Vella, F. Vurpillot, L. Rigutti
Rev. Sci. Instrum., 91, 083704, (2020)
Abstract online (HAL) : click here...

⋄ Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications

F. Giannazzo, E. Schilirò, R. Lo Nigro, P. Prystawko, Y. Cordier
Nitride Semiconductor Tech., , 397, (2020)

⋄ Photoassisted chemical smoothing of AlGaN surface after laser lift-off

Zhongming Zheng, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, and Baoping Zhang
JVST B, 38, 042207, (2020)
Abstract online (HAL) : click here...

⋄ Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon

M. Zielinski, S. Monnoye, H. Mank, F. Torregrosa, G. Grosset, Y. Spiegel, M. Portail, A. Michon
Mat. Sci. For., 1004, 132, (2020)

⋄ Why is it difficult to grow spontaneous ZnO nanowires using molecular beam epitaxy?

V. Sallet, C. Deparis, G. Patriarche, C. Sartel, G. Amiri, J.-M. Chauveau, C. Morhain and J. Zúñiga-Pérez
Nanotechnology, 31, 385601, (2020)
Abstract online (HAL) : click here...

⋄ Nickel Oxide-Based Heterostructures with Large band Offsets

R. Karsthof, H. von Wenckstem, J. Zúñiga-Pérez, C. Deparis and M. Grundmann.
Phys. Stat. Sol. B, 257, 1900639, (2020)
Abstract online (HAL) : click here...

⋄ Printing polarization and phase at the optical diffraction limit: near-and far-field optical encryption

Q. Song, S. Khadir, S. Vézian, B. Damilano, P. de Mierry, S. Chenot, V. Brandli, R. Laberdesque, B. Wattellier and P. Genevet
Nanophotonics, 10(1), 697, (2020)

⋄ InGaN islands and thin films grown on epitaxial graphene

C. Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, A. Dussaigne and B. Hyot
Nanotechnology, 31, 405601, (2020)
Abstract online (HAL) : click here...

⋄ Lasing up to 380 K in a sublimated GaN nanowire

S. Sergent, B. Damilano, S. Vézian, S. Chenot, T. Tsuchizawa, and M. Notomi
Appl. Phys. Lett., 116, 223101, (2020)
Abstract online (HAL) : click here...

⋄ Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template

Hongjian Li, Haojun Zhang, Panpan Li, Matthew Wong, Yi Chao Chow, S. Pinna, J. Klamkin, P. Demierry, J. Speck, S. Nakamura, S. Denbaars
J. Phys. Photonics, 2,3, 031003, (2020)
Abstract online (HAL) : click here...

⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet
Nat. Commun, 11, 2651, (2020)
Abstract online (HAL) : click here...

⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua
ACS Appl. Nano Mater., 3, 4054, (2020)
Abstract online (HAL) : click here...

⋄ Crystalline magnesium nitride (Mg3N2): From epitaxial growth to fundamental physical properties

P. John, H. Rotella, C. Deparis, G. Monge, F. Georgi, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Phys. Rev. Materials, 4, 054601, (2020)
Abstract online (HAL) : click here...

⋄ Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, D. Cooper
Nanotechnology, 31, 465706, (2020)
Abstract online (HAL) : click here...

⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,7, 1900760, (2020)
Abstract online (HAL) : click here...

⋄ Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grutzmacher, M. El Kurdi
Nat. Photonics, 14, 375, (2020)
Abstract online (HAL) : click here...

⋄ AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology

M. Abou Daher, M. Lesecq, P. Tilmant, N. Defrance, M. Rousseau, Y. Cordier, J.C. De Jaeger, and J.G. Tartarin
JVST B, 38, 033201, (2020)
Abstract online (HAL) : click here...

⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields
Sci Rep., 10, 5642, (2020)
Abstract online (HAL) : click here...

⋄ A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Blandine Alloing, Mathieu Leroux, Seoung-Hwan Park, Julien Brault and Yong-Hoon Cho
Nanoscale Adv., 2, 1449-1455, (2020)
Abstract online (HAL) : click here...

⋄ Luminescence behavior of semipolar (10-11) InGaN/GaN “bow-tie” structures on patterned Si substrates

J. Bruckbauer, C. Trager-Cowan, B. Hourahine, A. Winkelmann, P. Vennéguès, A. Ipsen, X. Yu, X. Zhao, M.J. Wallace, P.R. Edwards, G. Naresh-Kumar, M. Hocker, S. Bauer, R. Müller, J. Bai , K. Thonke, T. Wang, R.W. Martin
J. Appl. Phys., 127, 035705, (2020)

⋄ Metasurface-integrated vertical cavity surface-emitting lasers for programmable directional lasing emissions

Y.Y. Xie, P.N. Ni, Q.H. Wang, Q. Kan, G. Briere, P.P. Chen, Z.Z. Zhao, A. Delga, H.R. Ren, H.D. Chen, C. Xu and P. Genevet
Nat. Nanotechnol., 15, 125–130, (2020)

⋄ Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography

L. Amichi, I. Mouton, V. Boureau , E. Di Russo, P. Vennéguès, P. De Mierry, A. Grenier, P.H. Jouneau, C. Bougerol and D. Cooper
Nanotechnology, 31, 045702, (2020)
Abstract online (HAL) : click here...

⋄ Mid-Infrared Grayscale Metasurface Holograms

K. Wu, N. Kossowski, H. Qiu , H. Wang, Q.J. Wang and P. Genevet
Applied Sciences, 10, 552 , (2020)

⋄ Long-lifetime coherence in a quantum emitter induced by a metasurface

E. Lassalle, P. Lalanne, S. Aljunid, P. Genevet, B. Stout, T. Durt, and D. Wilkowski
Phys. Rev. A, 101, 013837, (2020)
Abstract online (HAL) : click here...

⋄ Metasurface orbital angular momentum holography

H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet
Nat. Commun, 10, 2986, (2019)
Abstract online (HAL) : click here...

⋄ Impact of tensile strain on low Sn content GeSn lasing

D. Rainko, Z. Ikonic, A. Elbaz, N. von den Driesch, D. Stange, E. Herth, P. Boucaud, M. Kurdi, D. Grützmacher, D. Buca
Sci Rep., 9, 259, (2019)
Abstract online (HAL) : click here...

⋄ Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

V. Fan Arcara; B. Damilano; G. Feuillet; S. Vézian; K. Ayadi; S. Chenot; J.-Y. Duboz
J. Appl. Phys., 126, 224503, (2019)
Abstract online (HAL) : click here...

⋄ Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

A. Jollivet, M. Tchernycheva, V. Trinité, E. Frayssinet, P. De Mierry, Y. Cordier and F.H. Julien
Appl. Phys. Lett., 115, 261103, (2019)
Abstract online (HAL) : click here...

⋄ 2 W/mm power density of an AlGaN/GaN HEMT grown on Free-Standing GaN Substrate at 40 GHz, Semiconductor Science and Technology

M.R. Irekti, M. Lesecq, N. Defrance, E. Okada, E. Frayssinet, Y. Cordier, J.G. Tartarin, J.C. De Jaeger
Semicond. Sci. Tech., 34, 12LT01, (2019)
Abstract online (HAL) : click here...

⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses

E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217, 1900760, (2019)

⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud
Sci Rep., 9, 18095, (2019)
Abstract online (HAL) : click here...

⋄ Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers

P. Henning , P. Horenburg, H. Bremers, U. Rossow, F. Tendille, P. Vennégués , P. de Mierry, J. Zúñiga-Pérez , and A. Hangleiter
Appl. Phys. Lett., 115, 202103, (2019)
Abstract online (HAL) : click here...

⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials

P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5, 52, (2019)
Abstract online (HAL) : click here...

⋄ Voigt Exceptional Points in an Anisotropic ZnO-Based Planar Microcavity:Square-Root Topology, Polarization Vortices, and Circularity

S. Richter, H. G. Zirnstein, J. Zúñiga-Pérez, E. Krüger, C. Deparis, L. Trefflich, C. Sturm, B. Rosenow, M. Grundmann, and R. Schmidt-Grund
Phys. Rev. Lett., 123, 227401, (2019)
Abstract online (HAL) : click here...

⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure

X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li
Phys. Stat. Sol. A, 216(24), 1900655, (2019)
Abstract online (HAL) : click here...

⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126, 205701, (2019)
Abstract online (HAL) : click here...

⋄ Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics

S. Sergent, B. Damilano, S. Vézian, S. Chenot, M. Takiguchi, T. Tsuchizawa, H. Taniyama, M. Notomi
ACS Photonics, 6,12, 3321-3330, (2019)
Abstract online (HAL) : click here...

⋄ Theoretical estimation of tunnel currents in hetero-junctions: the special case of nitride tunnel junctions

J.Y. Duboz and B. Vinter
J. Appl. Phys., 126, 174501, (2019)
Abstract online (HAL) : click here...

⋄ Al5+αSi5+δN12, a new Nitride compound

R. Dagher, L. Lymperakis, V. Delaye, L. Largeau, A. Michon, J. Brault & P. Vennéguès
Sci Rep., 9, 15907, (2019)
Abstract online (HAL) : click here...

⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density

R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet
J. Cryst. Growth, 526, 125235, (2019)
Abstract online (HAL) : click here...

⋄ Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates

M. Khoury, H. Li, H. Zhang, B. Bonef, M. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J.S. Speck, S. Nakamura, S.P. DenBaars
ACS Appl. Mater. Interfaces, 11, 50, 47106-47111, (2019)

⋄ Global optimization of metasurface designs using statistical learning methods

M.M.R. Elsawy, S. Lanteri, R. Duvigneau, G. Brière, M. Sabry Mohamed and P. Genevet
Sci Rep., 9, 17918 , (2019)
Abstract online (HAL) : click here...

⋄ Observation of Intersubband Absorption in ZnO Coupled Quantum Wells

B. Meng, J. Tamayo-Arriola, N. Le Biavan, M. Montes Bajo, A. Torres-Pardo, M. Hugues, D. Lefebvre, A. Hierro, J.-M. Chauveau, J. Faist
Phys. Rev. Applied, 054007, 12, (2019)
Abstract online (HAL) : click here...

⋄ High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors

F. Giannazzo, G. Greco, E. Schilirò, R. Lo Nigro, I. Deretzis, A. La Magna, F. Roccaforte, F. Iucolano, S. Ravesi, E. Frayssinet, A. Michon, Y. Cordier
ACS Appl. Electron. Mater., 1, 2342, (2019)
Abstract online (HAL) : click here...

⋄ High lateral breakdown voltage in thin channel AlGaN/GaN high electron mobility transistors on AlN/sapphire templates

I. Abid, R. Kabouche, C. Bougerol, J. Pernot, C. Masante, R. Comyn, Y. Cordier, F. Medjdoub
Micromachines , 10, 690, (2019)
Abstract online (HAL) : click here...

⋄ Remote epitaxy using graphene enables growth of stress-free GaN

T Journot, H Okuno, N Mollard, A Michon, R Dagher, P Gergaud, J Dijon, A V Kolobov and B Hyot
Nanotechnology, 30, 505603, (2019)

⋄ Optical Phase Transition in Semiconductor Quantum Metamaterials

A. Hierro, M. Montes Bajo, M. Ferraro, J. Tamayo-Arriola, N. Le Biavan, M. Hugues, J. M. Ulloa, M. Giudici, J.-M. Chauveau, P. Genevet
Phys. Rev. Lett., 123 , 117401 , (2019)
Abstract online (HAL) : click here...

⋄ Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. Chow, P. Li, J. Kearns, A. A. Taylor, P. De Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars
Opt. Express, 27, 24154, (2019)
Abstract online (HAL) : click here...

⋄ Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

E. Schilirò, F. Giannazzo, C. Bongiorno, S. Di Franco, G. Greco, F. Roccaforte, P. Prystawko, P. Kruszewski, M. Leszczyński, M. Krysko, A. Michon, Y. Cordier, I. Cora, B. Pecz, H. Gargouri, R. Lo Nigro
Mat Sci Semicon Proc, 97, 35-39, (2019)
Abstract online (HAL) : click here...

⋄ Metasurfaces Orbital Angular Momentum Holography

H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet
Nat. Commun, 10, 2986, (2019)
Abstract online (HAL) : click here...

⋄ Hybrid MoS2-gap-mode metasurface photodetectors

P. Ni, A. de Luna Bugallo, X. Yang, V.M. Arellano Arreola, M. Flores Salazar, E. Strupiechonski, B. Alloing, C. Shan, P. Genevet
J. Phys. D: Appl. Phys., 52, 374001, (2019)
Abstract online (HAL) : click here...

⋄ Kapitza thermal resistance characterization of epitaxial graphene-SiC(0001) interface

G. Hamaoui, R. Dagher, Y. Cordier, A. Michon, S. Potiron, M. Chirtoc, and N. Horny
Appl. Phys. Lett., 114, 1601, (2019)
Abstract online (HAL) : click here...

⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

F. Chiaruttini, T. Guillet, C Brimont, B. Jouault, P. Lefebvre, J. Vives, S. Chenot, Y. Cordier, B. Damilano, and M. Vladimihristellerova
Nano Lett., 19, 4911, (2019)
Abstract online (HAL) : click here...

⋄ Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS2-Gap-Mode Metasurfaces

P. Ni, A. de Luna Bugallo, V.M. Arellano Arreola, M.F. Salazar, E. Strupiechonski, V. Brändli, R. Sawant, B. Alloing and P. Genevet
ACS Photonics, 6, 7, 1594-1601, (2019)
Abstract online (HAL) : click here...

⋄ (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, and J.-Y. Duboz
AIP. Adv, 9, 055101, (2019)
Abstract online (HAL) : click here...

⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet
Adv. Opt. Mater., 7(14), 1801271, (2019)
Abstract online (HAL) : click here...

⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits

F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud
Opt. Express, 27, 11800, (2019)
Abstract online (HAL) : click here...

⋄ Enhanced Second-Harmonic Generation in a Single Microwire Based on Localized Surface Plasmon

J. Li, H. Zhu, Z. Chen, Y. Huang, H. Zheng, Z. Tang, X. Gui, S. Wang, Z. Tang, P. Ni, and P. Genevet
Phys. Stat. Sol. B, 256, 1900075, (2019)

⋄ Quantum interface of an electron and a nuclear ensemble

D. A. Gangloff, G. Éthier-Majcher, C. Lang, E. V. Denning, J. H. Bodey, D. M. Jackson, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Science, 364 (6435), 62-66, (2019)
Abstract online (HAL) : click here...

⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12, 045007, (2019)
Abstract online (HAL) : click here...

⋄ Role of In in hydrogenation of N-related complexes in GaInNAs

T.Mou, S.Li, C.R.Brown, V.R.Whiteside, K.Hossain, M.Al Khalfioui, M.Leroux, I.R.Sellers, B.Wang
ACS Appl. Electron. Mater., 1, 461, (2019)

⋄ Competition between horizontal and vertical polariton lasing in planar microcavities

O. Jamadi, F. Réveret, D. Solnyshkov, P. Disseix, J. Leymarie, L. Mallet-Dida, C. Brimont, T. Guillet, X. Lafosse, S. Bouchoule, F. Semond, M. Leroux, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. B, 99, 085304, (2019)
Abstract online (HAL) : click here...

⋄ Excitons in ZnO Quantum Wells

M.N. Bataev, N.G. Filosofov, A. Yu. Serov, V.F. Agekyan, C. Morhain, V.P. Kochereshko
Phys. Solid State, 60, 2628–2633, (2019)
Abstract online (HAL) : click here...

⋄ Silicene Nanostructures Grown on Graphene Covered SiC (0001) Substrate

I. Berbezier , A. Michon , P. Castrucci , M. Scarselli , M. Salvato , M. Scagliotti and M. De Crescenzi
Int. J. Nanosci., 18, 1940039, (2019)

⋄ On the morphologies of oxides particles in optical fibers: Effect of the drawing tension and composition

M. Vermillac, H. Fneich, J. Turlier, M. Cabie, C. Kucera, D. Borschneck, F. Peters, P. Vennéguès, T. Neisius, S. Chaussedent, D. R Neuville, A. Mehdi, J. Ballato, and W. Blanc
Opt. Mater., 87, 74-79, (2019)
Abstract online (HAL) : click here...

⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz
J. Cryst. Growth, 507, 220, (2019)
Abstract online (HAL) : click here...

⋄ Room Temperature Electrically Driven Ultraviolet Plasmonic Lasers

X. Yang, P.-N Ni, P.-T. Jing, L.-G. Zhang, R.-M. Ma, C.-X. Shan, D.-Z. Shen, and P. Genevet
Adv. Opt. Mater., 7, 1801681, (2019)

⋄ GaN Schottky diodes for proton beam monitoring

J.-Y. Duboz, J. Zucchi, E. Frayssinet, P. Chalbet, S. Chenot, M. Hugues, J.-C. Grini, R. Trimaud, M. Vidal and J. Hérault
Biomed. Phys. Eng. Express, 5, 025015, (2019)
Abstract online (HAL) : click here...

⋄ Optimization and uncertainty quantification of gradient index metasurfaces

N. Schmitt, N. Georg, G. Brière, D. Loukrezis, S. Héron, S. Lanteri, C. Klitis, M. Sorel, U. Rômer, H. De Gersem, S. Vézian, and P. Genevet
Opt. Mater. Express, 9, 892-910, (2019)
Abstract online (HAL) : click here...

⋄ Mitigating Chromatic Dispersion with Hybrid Optical Metasurfaces

R. Sawant, P. Bhumkar, A.Y. Zhu, P. Ni, F. Capasso, and P. Genevet
Adv. Mater., 31, 1805555, (2019)

⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression

R. Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet
J. Appl. Phys., 125, 035703, (2019)
Abstract online (HAL) : click here...

⋄ Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells

A. Jollivet, B. Hinkov, S. Pirotta, H. Hoang, S. Derelle, J. Jaeck, M. Tchernycheva, R. Colombelli, A. Bousseksou, M. Hugues, N. Le Biavan, J. Tamayo-Arriola, M. Montes Bajo, L. Rigutti, A. Hierro, G. Strasser, J.M. Chauveau, and F. H. Julien
Appl. Phys. Lett., 113, 251104, (2018)
Abstract online (HAL) : click here...

⋄ Edge-emitting polariton laser and amplifier based on a ZnO waveguide

O. Jamadi, F. reveret, P. Disseix, F. Medard, J. Leymarie, A. Moreau, D. Solnyshkov, C. Deparis, M. Leroux, E. Cambril, S. Bouchoule, J. Zúñiga-Pérez, and G. Malpuech
Light Sci Appl, 7, 82, (2018)
Abstract online (HAL) : click here...

⋄ Impact-induced chemical fractionation as inferred from hypervelocity impact experiments with silicate projectiles and metallic targets

C. Ganino, G. Libourel, A. Nakamura, S. Jacomet, O. Tottereau, P. Michel
Meteorit Planet Sci., 2306-2326, 53, (2018)
Abstract online (HAL) : click here...

⋄ Solving thermal issues in tensile-strained Ge microdisks

A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, P. Boucaud
Opt. Express, 26, 28376, (2018)
Abstract online (HAL) : click here...

⋄ Outfitting Next Generation Displays with Optical Metasurfaces

I. Kim, G. Yoon, J. Jang, P. Genevet, K. Tae Nam, and J. Rho
ACS Photonics, 5 (10), 3876–3895, (2018)

⋄ Well-ordered ZnO nanowires with controllable inclination on semipolar ZnO surfaces by chemical bath deposition

T. Cossuet, H. Roussel, J.M. Chauveau, O. Chaix-Pluchery, J.L. Thomassin, E. Appert and Vincent Consonni
Nanotechnology, 29, 475601, (2018)
Abstract online (HAL) : click here...

⋄ Ga-doping of nonpolar m-plane ZnMgO with high Mg contents

J.Tamayo-Arriola, M.Montes Bajo, N. Le Biavan, D.Lefebvre, A.Kurtz, J.M.Ulloa, M.Hugues, J.M.Chauveau, A.Hierro
J. Alloys and Comp., 766, 436, (2018)
Abstract online (HAL) : click here...

⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil
J. Cryst. Growth, 499, 40, (2018)
Abstract online (HAL) : click here...

⋄ Metasurfaces: Physics and Applications

F. Ding, P. Genevet and S.I. Bozhevolnyi
Applied Sciences, 8, 1727, (2018)

⋄ Enhanced excitonic emission efficiency in porous GaN

T.H. Ngo, B. Gil, T.V. Shubina, B. Damilano, S. Vezian, P. Valvin, J. Massies
Sci Rep., 8, 15767, (2018)
Abstract online (HAL) : click here...

⋄ Intentional polarity conversion of AlN epitaxial layers by oxygen

N. Stolyarchuk, T. Markurt, A. Courville, K. March, J. Zúñiga-Pérez, P. Vennéguès & M. Albrecht
Sci Rep., 8, 14111, (2018)
Abstract online (HAL) : click here...

⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel
IEEE Photonic Tech L, 30, 1567, (2018)
Abstract online (HAL) : click here...

⋄ Breaking the Intersubband Selection Rules for Absorption with Quantum Wells: Light Polarization Sensitivity under Normal Incidence

M. Montes Bajo, J. Tamayo-Arriola, N. Le Biavan, J.M. Ulloa, P. Vennéguès, D. Lefebvre, M. Hugues, J.-M. Chauveau, A. Hierro
Phys. Rev. Applied, 10, 034022, (2018)
Abstract online (HAL) : click here...

⋄ Modelling of free-form conformal metasurfaces

K. Wu, P. Coquet, Q. J. Wang and P. Genevet
Nat. Commun, 9, 3494, (2018)

⋄ Multisubband Plasmons in Doped ZnO Quantum Wells

M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J. M. Ulloa, N. Le Biavan, R. Peretti, F. H. Julien, J. Faist, J.M. Chauveau, and A. Hierro
Phys. Rev. Applied, 10, 024005, (2018)
Abstract online (HAL) : click here...

⋄ Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

E. Di Russo, F. Moyon, N. Gogneau, L. Largeau, E. Giraud, J.F. Carlin, N. Grandjean, J.M. Chauveau, M. Hugues, I. Blum, W. Lefebvre, F. Vurpillot, D. Blavette, and L. Rigutti
J. Phys. Chem. C, 122, 16704, (2018)
Abstract online (HAL) : click here...

⋄ Evidence of exciton complexes in non polar ZnO/(Zn,Mg)O A-plane quantum well

M.J. Mohammed Ali, J.M.Chauveau, T.Bretagnon
Superlattices Microstruct., 120, 410, (2018)
Abstract online (HAL) : click here...

⋄ Screening and engineering of colour centres in diamond

T. Lühman,N. Raatz, R. John, M. Lesik, J. Rödiger, M. Portail, D. Wildanger, F. Kleibler, K. Nordlund, A. Zaitsev, J-F. Roch, A. Tallaire, J. Meijer and S. Pezzagna
J. Phys. D: Appl. Phys., 51 (48), 483002, (2018)
Abstract online (HAL) : click here...

⋄ Germanium microlasers on metallic pedestals

A Elbaz, M Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, C Baudot, F. Boeuf, P. Boucaud
APL Photonics, 3(10), 106102, (2018)
Abstract online (HAL) : click here...

⋄ Chondrules as direct thermochemical sensors of solar protoplanetary disk gas

G. Libourel, M. Portail
Science_Advances, 4(7), eaar3321, (2018)

⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon

F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud
ACS Photonics, 5, 3643, (2018)
Abstract online (HAL) : click here...

⋄ Universal description of III-V/Si epitaxial growth processes

I. Lucci, S. Charbonnier, L. Pedesseau, M. Vallet, L. Cerutti, J.-B. Rodriguez, E. Tournié, R. Bernard, A. Létoublon, N. Bertru, A. Le Corre, S. Rennesson, F. Semond, G. Patriarche, L. Largeau, P. Turban, A. Ponchet, and C. Cornet
Phys. Rev. Materials, 2, 060401(R), (2018)
Abstract online (HAL) : click here...

⋄ Coherence of a dynamically decoupled quantum-dot hole spin

L. Huthmacher, R. Stockill, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Phys. Rev. B, 97, 241413, (2018)
Abstract online (HAL) : click here...

⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range

J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33, 075007, (2018)
Abstract online (HAL) : click here...

⋄ A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

R. Dagher, E. Blanquet, C. Chatillon, T. Journot, M. Portail, L. Nguyen, Y. Cordier and A. Michon
Cryst. Eng. Comm., 20, 3702-3710, (2018)
Abstract online (HAL) : click here...

⋄ Proposition of a model elucidating the AlN-on-Si (111) microstructure

N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouvière, G. Feuillet, and P. Vennéguès
J. Appl. Phys., 123, 215701, (2018)
Abstract online (HAL) : click here...

⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE

S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond
Phys. Stat. Sol. A, 215, 1700640, (2018)
Abstract online (HAL) : click here...

⋄ Loss analysis in nitride deep ultraviolet planar cavity

Z. Zheng, Y. Li, O. Paul, H. Long, S. Matta, M. Leroux, J. Brault, L. Ying, Z. Zheng, and B. Zhang
J. Nanophotonics, 12, 043504, (2018)
Abstract online (HAL) : click here...

⋄ γ′ precipitates with a twin orientation relationship to their hosting grainin a γ-γ′ nickel-based superalloy

S. Vernier, J.-M. Franchet, C. Dumont, P. Vennéguès, N. Bozzolo
Scr. Mater., 153, 10, (2018)
Abstract online (HAL) : click here...

⋄ Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching

D. Allioux, A. Belarouci, D. Hudson, E. Magi, M. Sinobad, G. Beaudin, A. Michon, N. Singh, R. Orobtchouk, and C. Grillet
Photonics Res., 6, 5, B74-B81, (2018)
Abstract online (HAL) : click here...

⋄ Time-resolved photoluminescence investigation of (Mg,Zn)O alloy growth on a non-polar plane

M.J. Mohammed Ali, J.M. Chauveau, T. Bretagnon
Superlattices Microstruct., 116, 105, (2018)
Abstract online (HAL) : click here...

⋄ Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells

A. Hierro, M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J.M. Ulloa, N. Le Biavan, R. Peretti, F. Julien, J. Faist, J.-M. Chauveau
Proc. SPIE, 10533, 105331K, (2018)

⋄ Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN

C.-M. Lee, J. Schacht, H. Warring, H. J. Trodahl, B. J. Ruck, S. Vézian, N. Gaston, and F. Natali
J. Appl. Phys., 123, 115106, (2018)

⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)

S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil
Superlattices Microstruct., 114, 161, (2018)
Abstract online (HAL) : click here...

⋄ Influence of aluminum incorporation on mechanical properties of 3C-SiC epilayers

J.F. Michaud, M. Zielinski, J. Ben Messaoud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 924, 318-321, (2018)
Abstract online (HAL) : click here...

⋄ Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs

H. Yacoub, T. Zweipfennig, H. Kalisch, A. Vescan, A. Dadgar, Matthias Wieneke, Jürgen Bläsing, A. Strittmatter, Stephanie Rennesson, and Fabrice Semond
Phys. Stat. Sol. A, 2018, 1700638, (2018)
Abstract online (HAL) : click here...

⋄ Electron transport in heavily doped GdN

T. Maity, H.J. Trodahl, F. Natali, and B.J. Ruck and S. Vézian
Phys. Rev. Materials, 2, 014405, (2018)

⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate

T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier
Phys. Stat. Sol. B, 255(5), 1700399, (2018)
Abstract online (HAL) : click here...

⋄ Gallium nitride MEMS resonators: how residual stress impacts design and performances

C. Morelle, D. Théron, J. Derluyn, S. Degroote, M. Germain, V. Zhang, L. Buchaillot, B. Grimbert, P. Tilmant, F. Vaurette, I. Roch-Jeune, V. Brändli, V. Avramovic, E. Okada, M.Faucher
IIEEE DTIP, 24, 371–377, (2018)
Abstract online (HAL) : click here...

⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

B. Damilano, S. Vézian, and J. Massies
Opt. Express, 25, 33243, (2017)
Abstract online (HAL) : click here...

⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

B. Damilano, S. Vézian, and J. Massies
Phys. Stat. Sol. B, 255(5), 1700392, (2017)
Abstract online (HAL) : click here...

⋄ Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions

N. Le Biavan, M. Hugues, M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, D. Lefebvre, Y. Cordier, B. Vinter, F.H. Julien, A. Hierro, and J.M. Chauveau
Appl. Phys. Lett., 111, 231903, (2017)

⋄ Laser damage of free-standing nanometer membranes

Y. Morimoto, I. Roland, S. Rennesson, F. Semond, P. Boucaud and P. Baum
J. Appl. Phys., 122, 215303, (2017)

⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer

E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 214, 1600419, (2017)

⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate

R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 215(9), 1700642, (2017)

⋄ Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

F. Giannazzo, G. Fisichella, G. Greco, E. Schiliro, I. Deretzis, R. Lo Nigro, A. La Magna, F. Roccaforte, F. Iucolano, S. Lo Verso, S. Ravesi, P. Prystawko, P. Kruszewski, M. Leszczynski, R. Dagher, E. Frayssinet, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 215(10), 1700653, (2017)

⋄ The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Courville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. MüLler-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana
J. Microsc., 268,3, 305-312, (2017)
Abstract online (HAL) : click here...

⋄ Internal quantum efficiency in polar and semipolar (11–22) In x Ga 1-x N/In y Ga 1-y N quantum wells emitting from blue to red

T.H. Ngo, N. Chery, P. Valvin, A. Courville, P. de Mierry, B. Damilano, P. Ruterana, B. Gil
Superlattices Microstruct., 113, 129-134, (2017)
Abstract online (HAL) : click here...

⋄ Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

M. Khoury, O. Tottereau, G. Feuillet, P. Vennéguès, and J. Zúñiga-Pérez
J. Appl. Phys., 122, 105108, (2017)
Abstract online (HAL) : click here...

⋄ Hybrid multiple diffraction in semipolar wurtzite materials: (01-12)-oriented ZnMgO/ZnO heterostructures as an illustration

E. de Prado, M. C. Martinez-Tomas, C. Deparis, V. Munoz-Sanjosé, and J. Zúñiga-Pérez
J. Appl. Cryst., 50, 1165, (2017)
Abstract online (HAL) : click here...

⋄ Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Y. Cordier, R. Comyn, E. Frayssinet, M. Khoury, M. Lesecq, N. Defrance, and J.-C. De Jaeger
Phys. Stat. Sol. A, 10, 1700637, (2017)
Abstract online (HAL) : click here...

⋄ ZnCdO: Status after 20 years of research

J. Zúñiga-Pérez
Mat Sci Semicon Proc, 69, 36, (2017)
Abstract online (HAL) : click here...

⋄ Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polarAlN epitaxial layers

N. Stolyarchuk, T. Markurt, A. Courville, K. March, O. Tottereau, P. Vennéguès, and M. Albrecht
J. Appl. Phys., 122, 155303, (2017)

⋄ Interface dipole and band bending in the hybrid p - n heterojunction Mo S 2 / GaN ( 0001 )

H. Henck, Z. Ben Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, F. Sirotti, F. Bertran, P. Le Fevre, S. Berciaud, A. T. Charlie Johnson, E. Lhuilli
Phys. Rev. B, 96, 115312, (2017)
Abstract online (HAL) : click here...

⋄ Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

S. Latrach, E. Frayssinet, N. Defrance, S. Chenot, Y. Cordier, C. Gaquière and H. Maaref
Current Applied Physics, 17, 1601-1608, (2017)

⋄ Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E.A. Samsudin, P. de Mierry, S. Nakamura, J. S. Speck, S. P. DenBaars
ACS Appl. Mater. Interfaces, 9, 36417, (2017)

⋄ 444nm InGaN light emitting diodes on low-defect-density (11-22) GaN templates on patterned sapphire

M. Khoury, H. Li, L. Y. Kuritzky, A.J. Mughal, P. de Mierry, S. Nakamura, J.S. Speck, and S. P. DenBaars
Appl. Phys. Express., 10, 106501, (2017)

⋄ Improving a solid-state qubit through an engineered mesoscopic environment

G. Éthier-Majcher, D. Gangloff, R. Stockill, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Phys. Rev. Lett., 119, 130503, (2017)

⋄ Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

F. Tabataba-Vakili, I. Roland, T.-M.o Tran, X. ChecouryMoustafa El Kurdi,1 S. Sauvage, C. Brimont, T. Guillet, S. Rennesson, J.Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 111, 131103, (2017)
Abstract online (HAL) : click here...

⋄ Les Métasurfaces, des composants optiques fonctionnels ultra-minces

P. Genevet, P. Chavel, N. Bonod
Photoniques, 87, 25, (2017)

⋄ Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates

A. Bengoechea-Encabo, S. Albert, M Müller, M–Y. Xie, P Veit, F. Bertram, M. A. Sanchez-Garcia, J. Zúñiga-Pérez, P. de Mierry, J. Christen
Nanotechnology, 28, 365704, (2017)

⋄ Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

T.H. Ngo, B. Gil, B. Damilano, P. Valvin, A. Courville, and P. de Mierry
J. Appl. Phys., 122, 063103, (2017)
Abstract online (HAL) : click here...

⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission

S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys., 122, 085706, (2017)
Abstract online (HAL) : click here...

⋄ Three-dimensional atomic-scale investigation of ZnO-MgZnO m-plane heterostructures

E. Di Russo, L. Mancini, F. Moyon, S. Moldovan, J. Houard, F. H. Julien, M. Tchernycheva, J.M. Chauveau, M.Hugues, G. Da Costa, I. Blum, W. Lefebvre, D. Blavette, and L. Rigutti
Appl. Phys. Lett., 111, 032108, (2017)
Abstract online (HAL) : click here...

⋄ Phase tuned entangled state generation between distant spin Qubits

R. Stockill, M. J. Stanley, L. Huthmacher, E. Clarke, M. Hugues, A. J. Miller, C. Matthiesen, C. Le Gall, and M. Atatüre
Phys. Rev. Lett., 119, 010503, (2017)

⋄ Freestanding dielectric nanohole array metasurface for mid-infrared wavelength applications

J. R. Ong, H. S. Chu, V. H. Chen, A. Y. Zhu, and P. Genevet
Opt. Lett., 42, 2639, (2017)

⋄ Use of thulium-doped LaF3 nanoparticles to lower the phonon energy of the thulium's environment in silica-based optical fibres

M. Vermillac, H. Fneich, J.-F. Lupi, J.-B. Tissot, C. Kucera, P. Vennéguès, A. Mehdi, D. R. Neuville, J. Ballato, W. Blanc
Opt. Mater., 68, 24 - 28, (2017)
Abstract online (HAL) : click here...

⋄ Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation

T. Kaldewey, S. Lüker, A. V. Kuhlmann, S. R. Valentin, J.M. Chauveau, A. Ludwig, A. D. Wieck, D. E. Reiter, T. Kuhn, and R. J. Warburton
Phys. Rev. B, 95, 241306(R), (2017)

⋄ CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut

R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon
Mat. Sci. For., 897, 731 - 734, (2017)
Abstract online (HAL) : click here...

⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs

C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers
RSC Adv., 7, 25353, (2017)

⋄ A combined growth process for state-of-the-art GaN on silicon

G. Gommé, E. Frayssinet, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4, 1600449, (2017)

⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4, 1600450, (2017)
Abstract online (HAL) : click here...

⋄ Non-metal to metal transition in n-type ZnO single crystal materials

S. Brochen, G. Feuillet, J.L. Santailler, R. Obrecht, M. Lafossas, P. Ferret, J.M. Chauveau,and J. Pernot
J. Appl. Phys., 121, 095704, (2017)
Abstract online (HAL) : click here...

⋄ Internal quantum efficiency and Auger recombination in green\, yellow and red InGaN-based light emitters grown along the polar direction

T.H. Ngo, B. Gil, B. Damilano, K. Lekhal, P. de Mierry
Superlattices Microstruct., 103, 245, (2017)
Abstract online (HAL) : click here...

⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films

J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali
MRS Advances, 2, 165, (2017)

⋄ Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy

F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck
MRS Advances, 2, 189, (2017)

⋄ Intersubband absorption in m-plane ZnO/ZnMgO MQWs

M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, M. Tchernycheva, F. H. Julien, R. Peretti, J. Faist, M. Hugues, J. M. Chauveau, A. Hierro
Proc. SPIE, 10105, 101050O-1, (2017)

⋄ Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system

T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, and R. Colombelli
Appl. Phys. Lett., 110, 131102, (2017)
Abstract online (HAL) : click here...

⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault.
J. Cryst. Growth, 461, 10-15, (2017)
Abstract online (HAL) : click here...

⋄ Anomalous DC and RF Behavior of Virgin AlGaN/AlN/GaN HEMTs

H. Sánchez Martín, O. García, S. Perez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. Gonzalez, J. Mateos, I.Iniguez de la Torre
Semicond. Sci. Tech., 32, 035011, (2017)
Abstract online (HAL) : click here...

⋄ Recent improvements of flexible GaN-based HEMT technology

S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, Y. Cordier, B. Damilano, G. Tabares Jimenez, A. Ebongue, and V. Hoel
Phys. Stat. Sol. A, 214(4), 1600484, (2017)
Abstract online (HAL) : click here...

⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing3C-SiC membranes

R. Khazaka, J.-F. Michaud, P. Vennéguès, D. Alquier, and M. Portail
Appl. Phys. Lett., 110, 081602, (2017)
Abstract online (HAL) : click here...

⋄ Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes

M. Grundmann, C. Sturm, C. Kranert, S. Richter, R. Schmidt-Grund, C. Deparis, J. Zúñiga-Pérez
Phys. Stat. Sol. RRL, 11, 1600295, (2017)
Abstract online (HAL) : click here...

⋄ Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber

M. Vermillac, J.-F. Lupi,F. Peters,M. Cabié, P. Vennéguès,C. Kucera, T. Neisius, J. Ballato, W. Blanc
J. Am. Ceram. Soc., 100(5), 1814-1819, (2017)
Abstract online (HAL) : click here...

⋄ Excitonic complexes in GaN/(Al,Ga)N quantum dots

D. Elmaghraoui, M. Triki, S. Jaziri, G. Muñoz-Matutano, M. Leroux, J. Martinez-Pastor
J. Phys. Cond. Mat., 29, 105302, (2017)

⋄ Exceptional points in anisotropic photonic structures: from non-Hermitian physics to possible device applications

M. Grundmann, S. Richter, T. Michalsky, C. Sturm, J. Zúñiga-Pérez, and R. Schmidt-Grund
Proc. SPIE, 10105, 0277-786X, (2017)

⋄ Recent advances in planar optics: from plasmonic to dielectric metasurfaces

P. Genevet, F. Capasso, F. Aieta, M. Khorasaninejad, and R. Devlin
Optica, 4 (1), 139-152, (2017)

⋄ Anisotropic Surface Plasmon Polariton Generation Using Bimodal V‑Antenna Based Metastructures

D. Wintz, A. Ambrosio, A. Y. Zhu, P. Genevet, and F. Capasso
ACS Photonics, 4 (1), 22-27, (2017)

⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A, 214(4), 1600436, (2017)
Abstract online (HAL) : click here...

⋄ Deep-level spectroscopy in metal–insulator–semiconductor structures

A. Kurtz, E. Muñoz, J.M. Chauveau and A. Hierro
J. Phys. D: Appl. Phys., 50, 065104 , (2017)

⋄ Efficient second harmonic generation in low-loss planar GaN waveguides

M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25, 23035-23044, (2017)
Abstract online (HAL) : click here...

⋄ Ion-induced interdiffusion of surface GaN quantum dots

C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig
Nuclear Instruments and Methods in Physics Research B, 409, 107, (2017)

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation

B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies
J. Cryst. Growth, 477, 262, (2017)

⋄ Inkjet‐Printed Nanocavities on a Photonic Crystal Template

F. SF Brossard, V. Pecunia, A. J. Ramsay, J. P. Griffiths, M. Hugues, H. Sirringhaus
Adv. Mater., 29(47), 1704425, (2017)

⋄ Polarity in GaN and ZnO: Theory, measurements, growth and devices

J. Zúñiga-Pérez, V. Consonni, L. Lymperakis, X. Kong, A. Trampert, S. Fernandez-Garrido, O. Brandt, H. Renevier, S. Keller, K. Hestroffer, M. R. Wagner, J. S. Reparaz, F. Akyol, S. Rajan, S. Rennesson, T. Palacios, and G. Feuillet
Appl. Phys. Rev., 3, 041303, (2016)
Abstract online (HAL) : click here...

⋄ GaN quantum dot polarity determination by X-ray photoelectron diffraction

O. Romanyuk, I. Bartoš, J. Brault, P. De Mierry, T. Paskova, P. Jiříčeka
Appl. Surf. Sci., 389, 1156, (2016)

⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet
Appl. Phys. Lett., 109, 231101, (2016)
Abstract online (HAL) : click here...

⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN

J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali
Cryst. Growth Des. , 16, 6454, (2016)

⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiCgrowth direction

R. Khazaka, J.-F. Michaud, P. Vennéguès, L. Nguyen, D. Alquier, and M. Portail
J. Appl. Phys., 120, 185306, (2016)
Abstract online (HAL) : click here...

⋄ Ultraviolet light emitting diodes using III-N quantum dots

J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55, 95, (2016)
Abstract online (HAL) : click here...

⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates

M. Khoury, P. Vennéguès, M. Leroux,V. Delaye, G. Feuillet and J. Zúñiga-Pérez
J. Phys. D: Appl. Phys., 49, 475104, (2016)

⋄ Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth

B. Alloing et J. Zúñiga-Pérez
Mat Sci Semicon Proc, 55, 51, (2016)

⋄ The 2016 oxide electronic materials and oxide interfaces roadmap

M. Lorenz, M. S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F. K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, J. Zúñiga-Pérez, D. J. Rogers, F.
J. Phys. D: Appl. Phys., 49, 433001, (2016)
Abstract online (HAL) : click here...

⋄ High temperature electrical transport study of Si-doped AlN

S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J. Brault
Superlattices Microstruct., 98, 253, (2016)
Abstract online (HAL) : click here...

⋄ High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx

F. Réveret, L. Bignet, W. Zhigang, X. Lafosse, G. Patriarche, P. Disseix F. Médard, M. Mihailovic, J. Leymarie, J. Zúñiga-Pérez and S. Bouchoule
J. Appl. Phys., 120, 093107, (2016)

⋄ Graphene integration with nitride semiconductors for high power and high frequency electronics

F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 214, 1600460, (2016)

⋄ Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

P. Leclaire, E. Frayssinet, C. Morelle, Y. Cordier, D. Théron and M. Faucher
J. Micromech. Microeng., 26, 105015, (2016)

⋄ Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

A. Shkurmanov, C. Sturm, J. Lenzner, G. Feuillet, F. Tendille, P. De Mierry, and M. Grundmann
AIP Adv, 6, 95013, (2016)

⋄ Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks

I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury & P. Boucaud
Sci Rep., 6, 34191, (2016)
Abstract online (HAL) : click here...

⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality

F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry
Appl. Phys. Lett., 109, 082101, (2016)

⋄ Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions

D. Massarotti, B. Jouault, V. Rouco, S. Charpentier, T. Bauch, A. Michon, A. De Candia, P. Lucignano, F. Lombardi, F. Tafuri, and A. Tagliacozzo
Phys. Rev. B, 94, 054525, (2016)
Abstract online (HAL) : click here...

⋄ Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

X. S. Nguyen, H. W. Hou, P. De Mierry, P. Vennéguès, F. Tendille, A. R. Arehart, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua
Phys. Stat. Sol. B, 253(11), 2225-2229, (2016)

⋄ Anisotropic optical properties of a homoepitaxial (Zn, Mg) O/ZnO quantum well grown on a‐plane ZnO substrate

M. Ali, J. Mohammed, J.M. Chauveau, T. Bretagnon
Phys. Stat. Sol. C, 13, 598, (2016)
Abstract online (HAL) : click here...

⋄ Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder

J. Zúñiga-Pérez, L. Kappei, C. Deparis, F. Reveret, M. Grundmann, E. de Prado, O. Jamadi, J. Leymarie, S. Chenot, and M. Leroux
Appl. Phys. Lett., 108, 251904, (2016)

⋄ Superconductivity in the ferromagnetic semiconductor samarium nitride

E. -M. Anton, S. Granville, A. Engel, S. V. Chong, M. Governale, U. Zülicke, A. G. Moghaddam, H. J. Trodahl, F. Natali, S. Vézian, and B. J. Ruck
Phys. Rev. B, 94, 024106, (2016)

⋄ Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy

L. Wang, S. Guillemin, J.M. Chauveau, V. Sallet, F. Jomard, R. Brenier, V. Consonni, G. Brémond
Phys. Stat. Sol. C, 13, 576, (2016)
Abstract online (HAL) : click here...

⋄ Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem

L. Rigutti, L. Mancini, E. Di Russo, I. Blum, F. Moyon, W. Lefebvre, D. Blavette, F. Vurpillot, E. Giraud, J.F. Carlin, R. Butté, N. Grandjean, N. Gogneau, L. Largeau, F. H. Julien, M. Tchernycheva, J.M. Chauveau and M. Hugues
Microsc. Microanal., 22, 650 - 651, (2016)
Abstract online (HAL) : click here...

⋄ Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO

M.D. Neumann, N. Esser, J.M. Chauveau, R. Goldhahn and M. Feneberg
Appl. Phys. Lett., 108, 221105, (2016)

⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)

S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth, 450, 22, (2016)

⋄ Polarity Control in Group-III Nitrides beyond Pragmatism

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht
Phys. Rev. Applied, 5, 054004, (2016)

⋄ First power performance demonstration of flexible AlGaN/GaN High Electron Mobility Transistor

S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, E. Okada, Y. Cordier, B. Damilano, G. Tabares-Jiménez, A. Ebongué, and V. Hoel
IEEE Electron Device Letters, 37, 553, (2016)
Abstract online (HAL) : click here...

⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes

G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier
IEEE Photonic Tech L, 28, 1661, (2016)
Abstract online (HAL) : click here...

⋄ p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre
Mat. Sci. For., 858, 137-142, (2016)
Abstract online (HAL) : click here...

⋄ Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC

B. Jouault, S. Charpentier, D. Massarotti, A. Michon, M. Paillet, J. R. Huntzinger, A. Tiberj, A.-A. Zahab, T. Bauch, P. Lucignano, A. Tagliacozzo, F. Lombardi and F. Tafuri
J. Supercond. Nov. Magn., 29, 1145, (2016)
Abstract online (HAL) : click here...

⋄ Traditional and emerging materials for optical metasurfaces

A. Y. Zhu, A. I. Kuznetsov, B. Luk'yanchuk, N. Engheta, and P. Genevet
Nanophotonics, 6(2), 452-471, (2016)

⋄ Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

S. Contreras, L. Konczewicz, P. Kwasnicki, R. Arvinte, H. Peyre, T. Chassagne, M. Zielinski, M. Kayambaki, S. Juillaguet, K. Zekentes
Mat. Sci. For., 858, 249-252, (2016)
Abstract online (HAL) : click here...

⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55, 05FG06, (2016)
Abstract online (HAL) : click here...

⋄ Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zúñiga-Pérez
Phys. Rev. B, 93, 115205, (2016)

⋄ Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. De Mierry
Jpn. J. Appl. Phys., 55, 05FG10, (2016)
Abstract online (HAL) : click here...

⋄ Broadband mode conversion via gradient index metamaterials

H.X. Wang, Y.D. Xu, P. Genevet, J.-H. Jiang, and H.Y. Chen
Sci Rep., 6, 24529 , (2016)

⋄ Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

R. Comyn, Y. Cordier, S. Chenot, A. Jaouad, H. Maher, V. Aimez
Phys. Stat. Sol. A, 213, 917-924, (2016)
Abstract online (HAL) : click here...

⋄ Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators

I. Roland, Y. Zeng, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, M. Gromovyi, J. Y. Duboz, F. Semond, M. P. de Micheli, and P. Boucaud
Opt. Express, 24, 9602, (2016)
Abstract online (HAL) : click here...

⋄ ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

A. Hierro, G. Tabares, M. Lopez-Ponce, J. M. Ulloa, A. Kurtz, E. Muñoz, V. Marín-Borrás, V. Muñoz-Sanjose, J.M. Chauveau
Proc. SPIE, 9749, 97490W, (2016)

⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies
Nano Lett., 16, 1863, (2016)

⋄ Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen

A. Kurtz, A. Hierro, M. Lopez-Ponce, G. Tabares and J.M. Chauveau
Semicond. Sci. Tech., 31, 035010, (2016)

⋄ Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L. Wang, J.M. Chauveau, R. Brenier, V. Sallet, F. Jomard, C Sartel, G. Brémond
Appl. Phys. Lett., 108, 132103, (2016)
Abstract online (HAL) : click here...

⋄ Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating

H. Spisser, A. Grimault-Jacquin, N. Zerounian, A. Aassime, L. Cao, F. Boone, H. Maher, Y. Cordier, F. Aniel
Choisir un journal..., 37, 243 - 257, (2016)
Abstract online (HAL) : click here...

⋄ Deep-UV nitride-on-silicon microdisk lasers

J. Sellés, C. Brimont, G. Cassabois, P. Valvin, T. Guillet, I. Roland, Y. Zeng, X. Checoury, P. Boucaud, M. Mexis, F. Semond & B. Gayral
Sci Rep., 6, 21650, (2016)
Abstract online (HAL) : click here...

⋄ Pseudomorphic ZnO-based heterostructures: From polar through all semipolar to nonpolar orientations

M. Grundmann, and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 253, 351-360, (2016)

⋄ Comment on “Adsorption of hydrogen and hydrocarbon molecules on SiC(001)”

E. Wimmer, E. Celasco, L. Vattuone, L. Savio, A. Tejeda, M. Silly, M. d'Angelo, F. Sirotti, M. Rocca, A. Catellani, G. Galli, L. Douillard, F. Semond, V.Yu. Aristov, P. Soukiassian
Surf Sci Lett, 644, L170 - L171, (2016)
Abstract online (HAL) : click here...

⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
J. Cryst. Growth, 434, 25, (2016)

⋄ Controlling electromagnetic fields at boundaries of arbitrary geometries

J.Y.H. Teo, L. J. Wong, C. Molardi, and P. Genevet
Phys. Rev. A, 94, 023820, (2016)

⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 253, 105-111, (2016)

⋄ Imaging of Photonic Crystal Localized Modes through Third-Harmonic Generation

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, and P. Boucaud
ACS Photonics, 3, 1240, (2016)
Abstract online (HAL) : click here...

⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth, 433, 165-171, (2016)

⋄ Evidence of multimicrometric coherent γ' precipitates in a hot-forged γ –γ' nickel-based superalloy

M.-A. Charpagne, P. Vennéguès, T. Billot, J.-M. Franchet and N. Bozzolo
J. Microsc., 263, 106, (2016)
Abstract online (HAL) : click here...

⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy

P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express., 9, 015502, (2016)

⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud
Appl. Phys. Lett., 108, 011608, (2016)
Abstract online (HAL) : click here...

⋄ Measurement of bound states in the continuum by a detector embedded in a photonic crystal

R. Gansch, S. Kalchmair, P. Genevet, T. Zederbauer, H. Detz, A. M Andrews, W. Schrenk, F. Capasso, M. Lončar and G. Strasser
Light Sci Appl, 5, e16147, (2016)

⋄ Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity

R. Hahe, C. Brimont, P. Valvin, T. Guillet, F. Li, M. Leroux, J. Zúñiga-Pérez, X. Lafosse, G. Patriarche, and S. Bouchoule
Phys. Rev. B, 92, 235308, (2015)
Abstract online (HAL) : click here...

⋄ Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate

R. Khazaka, E. Bahette, M. Portail, D. Alquier, J.-F. Michaud
Mater. Lett., 160, 28-30, (2015)
Abstract online (HAL) : click here...

⋄ AlGaN/GaN High Electron Mobility Transistors grown by Ammonia Source Molecular Beam Epitaxy

Y. Cordier
Gallium Nitride (GaN): Physics, Devices, and Technology, F.Medjdoub, CRC Press, 45-60, (2015)

⋄ Nanoscale calibration of n-type ZnO staircase structures by scanning capacitancemicroscopy

L. Wang, J. Laurent, J.M. Chauveau, V. Sallet, F. Jomard, and G. Brémond
Appl. Phys. Lett., 107, 192101, (2015)
Abstract online (HAL) : click here...

⋄ Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal and P. De Mierry
Appl. Phys. Lett., 107, 122103, (2015)
Abstract online (HAL) : click here...

⋄ Yellow–red emission from (Ga,In)N heterostructures

B. Damilano and B. Gil
J. Phys. D: Appl. Phys., 48, 403001, (2015)
Abstract online (HAL) : click here...

⋄ Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier and F. Schopfer
Nat. Nanotechnol., 10, 965–971, (2015)
Abstract online (HAL) : click here...

⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud
Acta Mater., 98, 336, (2015)
Abstract online (HAL) : click here...

⋄ Transport of indirect excitons in ZnO quantum wells

Y.Y. Kuznetsova, F. Fedichkin, P. Andreakou, E.V. Calman, L.V. Butov, P.Lefebvre, T. Bretagnon, T. Guillet, M. Vladimirova, C. Morhain,and J.M. Chauveau
Opt. Lett., 40, 3667, (2015)
Abstract online (HAL) : click here...

⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate

B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A, 212, 2297–2301, (2015)

⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

B. Damilano, J. Brault and J. Massies
J. Appl. Phys., 118, 024304, (2015)

⋄ Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

P. Vennéguès, F. Tendille and P. De Mierry
J. Phys. D: Appl. Phys., 48, 325103, (2015)

⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald
J. Appl. Phys., 118, 024303, (2015)
Abstract online (HAL) : click here...

⋄ Native point defect energies, densities, and electrostatic repulsion across (Mg,Zn)O alloys

G.M. Foster, J. Perkins, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson
Phys. Stat. Sol. A, 212, 1448, (2015)

⋄ Improved performance of GaInNAs solar cell after UV-activated hydrogenation

M. Fukuda, V. R. Whiteside, J. C. Keay, M. Al Khalfioui, M. Leroux, K. Hossain, T. D. Golding, I. R. Sellers
IEEE PVSC, 42, 1-3, (2015)

⋄ Raman investigation of heavily Al doped 4H-SiC layers grown by CVD

P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski,L. Konczewicz, S. Contreras, J. Camassel and S. Juillaguet
Mat. Sci. For., 806, 51, (2015)
Abstract online (HAL) : click here...

⋄ Impact of Mg content on native point defects in MgxZn1-xO (0 <= x <= 0.56)

J. Perkins, G.M. Foster, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson
APL Materials, 3, 062801, (2015)

⋄ Comparative studies of n-type 4H-SiC: Raman vs Photoluminescence spectroscopy

P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, S. Juillaguet
Mat. Sci. For., 821-823, 237-240, (2015)

⋄ Optical characterization of p-type 4H-SiC epilayers

G. Liaugaudas, D. Dargis, P. Kawasnicki, H. Peyre, R. Arvinte, S. Juillaguet, M. Zielinski, K. Jarašiūnas
Mat. Sci. For., 821-823, 249-252, (2015)
Abstract online (HAL) : click here...

⋄ Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

F. Tendille, M. Hugues, P. Vennéguès, M. Teisseire and P. De Mierry
Semicond. Sci. Tech., 30, 065001, (2015)

⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties

P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 252, 1096, (2015)

⋄ Al(Ga)N/GaN High Electron Mobility Transistors on Silicon

Y. Cordier
Phys. Stat. Sol. A, 212, 1049-1058, (2015)

⋄ Epitaxial challenges of GaN on silicon

F. Semond
MRS Bulletin, vol 40, 412-417, (2015)

⋄ Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS

R. Comyn, Y. Cordier, V. Aimez, and H. Maher
Phys. Stat. Sol. A, 212, 1145-1152, (2015)

⋄ Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

P. Altuntas, F. Lecourt, A. Cutivet, N. Defrance, E. Okada, M. Lesecq, S. Rennesson, A. Agboton, Y. Cordier, V. Hoel, and J.C. De Jaeger
IEEE Electron. Device Lett., 36, 303, (2015)

⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil
Appl. Phys. Lett., 106, 142101, (2015)
Abstract online (HAL) : click here...

⋄ Improved performance in GaInNAs solar cells by hydrogen passivation

M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui
J. Appl. Phys., 106, 141904, (2015)

⋄ Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier
Nat. Commun, 6, 6806, (2015)

⋄ Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

A. Pérez-Tomás, G. Catalàn, A. Fontserè, V. Iglesias, H. Chen, P.M. Gammon, M.R. Jennings, M. Thomas, C.A. Fisher, Y.K. Sharma, M. Placidi, M. Chmielowska, S. Chenot, M. Porti, M. Nafría and Y. Cordier
Nanotechnology, 26, 115203, (2015)

⋄ Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures

T.H. Ngo, D. Rosales, B. Gil, P. Valvin, B. Damilano, K. Lekhal, P. de Mierry
Proc. SPIE, 9363, 93630K, (2015)
Abstract online (HAL) : click here...

⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy

M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès
J. Cryst. Growth, 419, 88-93, (2015)

⋄ Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells

G. Tabares, A. Hierro, M. Lopez-Ponce, E. Muñoz, B. Vinter, and J.M. Chauveau
Appl. Phys. Lett., 106, 061114, (2015)

⋄ Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, M. Mexis, F. Semond, and P. Boucaud
Appl. Phys. Lett., 106, 081105, (2015)
Abstract online (HAL) : click here...

⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates

J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE, 9363, 93630Z, (2015)
Abstract online (HAL) : click here...

⋄ ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors

A. Hierro, G. Tabares, M. Lopez-Ponce, E. Munoz, A Kurtz, B Vinter, J.M. Chauveau
Proc. SPIE, 9364, 93641H, (2015)

⋄ 3C-SiC : new interest for MEMS devices

J.F. Michaud, M. Portail, T. Chassagne, M .Zielinski and D. Alquier
Mat. Sci. For., 3, 806, (2015)

⋄ Investigation of Aluminium incorporation in 4H-SiC epitaxial layers

R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet and H. Peyre
Mat. Sci. For., 45, 806, (2015)

⋄ Photoluminescence study of Be-acceptors in GaInNAs epilayers

Y. Tsai, B. Barman, T. Scrace, M. Fukuda, V. R. Whiteside, I. R. Sellers, M. Leroux, M. Al Khalfioui, and A. Petrou
J. Appl. Phys., 117, 045705, (2015)

⋄ Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques

G. Liaugaudas, D. Dargis, P. Kwasnicki, R. Arvinte, M. Zielinski, K. Jarašiūnas
J. Phys. D: Appl. Phys., 48, 025103, (2015)

⋄ Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers

R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre
Mat. Sci. For., 821-823, 149, (2015)
Abstract online (HAL) : click here...

⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect

R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud
Mat. Sci. For., 821-823, 978, (2015)

⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers

R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For., 821-823, 1003, (2015)

⋄ Highly resistive epitaxial Mg-doped GdN thin films

C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett., 106, 022401, (2015)

⋄ 3C-SiC: from electronic to MEMS devices

J.F. Michaud, M. Portail and D. Alquier
Advanced Silicon Carbide Devices and Processing , Edited by E. Saddow and F. La Via, Intech, ISBN 978-953-51-2168-8, (2015)
Abstract online (HAL) : click here...

⋄ The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures

D. Rosales, T.H. Ngo, P. Valvin, K. Lekhal, B. Damilano, P. De Mierry, B. Gil, T. Bretagnon
Superlattice Microst, 76, 9-15, (2014)
Abstract online (HAL) : click here...

⋄ Gallium Nitride as an electromechanical material

M. Rais-Zadeh, V. Gokhale, A. Ansari, M. Faucher, D. Theron, Y. Cordier, L. Buchaillot
IEEE J.MEMS, 23, 1252-1271, (2014)

⋄ Low loss GaN waveguides for visible light on Si Substrates

M. Gromovyi, F. Semond, J.Y. Duboz, G. Feuillet, M.P. De Micheli
J. Europ. Opt. Soc. Rap. Public., 9, 14050, (2014)
Abstract online (HAL) : click here...

⋄ Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
Mat. Sci. For., 806, 81-87, (2014)

⋄ Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices

O. Arenas, É. Al Alam, A. Thevenot, Y. Cordier, A. Jaouad, V. Aimez, H. Maher, R. Arès and F. Boone
IEE JEDS, 2, 145-148, (2014)

⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment

M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski
J. Cryst. Growth, 157, 404, (2014)

⋄ On the Correlation Between Kink Effect and Effective Mobility in InAlN/GaN HEMTs

P. Altuntas, N. Defrance, M. Lesecq, A. Agboton, R. Ouhachi, E. Okada, C. Gaquiere, J. De Jaeger, E. Frayssinet, Y. Cordier
Proc. of the 9th European Microwave Integrated Circuit Conference, , 88-91, (2014)

⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire
J. Cryst. Growth, 404, 177-183, (2014)

⋄ Magnetic properties of Gd doped GaN

S. Shvarkov, A. Ludwig, A. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H.W. Becker, D. Rogalla, and D. Reuter
Phys. Stat. Sol. B, 251, 1673-1684, (2014)

⋄ Selective area growth of GaN nanostructures: A key to produce high-quality (11-20) a-plane pseudo-substrates

S. Albert, A. Bengoechea-Encabo, J. Zúñiga-Pérez, P. de Mierry, P. Val, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett., 105, 091902, (2014)

⋄ Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates

N. Gogneau, A. Ben Gouider Trabelsi, M. Silly, M. Ridene, M. Portail, A. Michon, M. Oueslati, R. Belkhou, F. Sirotti, A. Ouerghi
Nanotechnology, Science and Applications, 85, 7, (2014)

⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29, 084001, (2014)
Abstract online (HAL) : click here...

⋄ Electrothermally driven high frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J.F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou and S. Gauthier
J. Appl. Phys., 054304, 116, (2014)
Abstract online (HAL) : click here...

⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond
Appl. Phys. Lett., 104, 241113, (2014)
Abstract online (HAL) : click here...

⋄ Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

I. Roland, Y. Zeng, Z. Han, X. Checoury, C. Blin, M. El Kurdi, A. Ghrib, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, P. Boucaud
Appl. Phys. Lett., 105, 11104, (2014)
Abstract online (HAL) : click here...

⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones

M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho
J. Appl. Phys., 116, 034308, (2014)

⋄ Magnetoresistance of disordered graphene: From low to high temperatures

B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
Phys. Rev. B, 90, 035423, (2014)
Abstract online (HAL) : click here...

⋄ Aluminum nitride photonic crystals and microdiscs for ultra-violet nanophotonics

D. Néel, I. Roland, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, S. Semond, P. Boucaud
Adv. Nat. Sci: Nanosci. Nanotechnol., 5, 023001, (2014)
Abstract online (HAL) : click here...

⋄ Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells

M. Fukuda, V.R. Whiteside, J.C. Keay, Matthew B. Johnson, M. Al Khalfioui, M. Leroux, K. Hossain, T.D. Golding, I.R. Sellers
IEEE PVSC, 40th PSVC, 0669-0673, (2014)

⋄ Valence-band orbital character of CdO: A synchrotron-radiation photoelectron spectroscopy and density functional theory study

J.J. Mudd, T.L. Lee, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, D.J. Payne, R.G. Egdell, and C.F. McConville
Phys. Rev. B, 89, 165305, (2014)

⋄ Rotated domain network in graphene on cubic-SiC(001)

A.N. Chaika, O.V. Molodtsova, A.A. Zakharov, D. Marchenko, J. Sánchez-Barriga, A. Varykhalov, S.V. Babenkov, M. Portail, M. Zielinski, B.E. Murphy, S.A. Krasnikov, O. Lübben, I.V. Shvets and V.Y. Aristov
Nanotechnology, 25, 135605, (2014)

⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
J. Appl. Phys., 115, 153504, (2014)

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films

Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398, 23, (2014)

⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter

B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE, 1G, 8986, (2014)

⋄ Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO

J.J. Mudd, T.L. Lee, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, D. Hesp, J.M. Kahk, D.J. Payne, R.G. Egdell, and C.F. McConville
Phys. Rev. B, 89, 035203, (2014)

⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104, 071912, (2014)
Abstract online (HAL) : click here...

⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau
J. Cryst. Growth, 388, 35, (2014)

⋄ Quantitative determination of compositional profiles using HAADF image simulations

R. El Bouayadi, M. Korytov, P.A. van Aken, P. Vennéguès, and M. Benaissa
Phys. Stat. Sol. C, 11, 284, (2014)

⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties

S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano
Semicond. Sci. Tech., 29, 035016, (2014)

⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986, 89860Z, (2014)
Abstract online (HAL) : click here...

⋄ Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B.C. Camargo, Y. Kopelevich, J. Camassel,
Phys. Rev. B, 89, 085422, (2014)
Abstract online (HAL) : click here...

⋄ Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition

T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Souliere, G.Ferro, H.B. Weber, M. Krieger
Mat. Sci. For., 778-780, 261, (2014)
Abstract online (HAL) : click here...

⋄ GaN/AlGaN superlattices for p contacts in LEDs

J.Y. Duboz
Semicond. Sci. Tech., 29, 035017, (2014)

⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron
Phys. Stat. Sol. A, 211, 1655-1659, (2014)
Abstract online (HAL) : click here...

⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films

F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404, 146-151, (2014)

⋄ AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Theron, M. Faucher
Semicond. Sci. Tech., 29, 115018, (2014)

⋄ Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder

W. Desrat, M. Chmielowska, S. Chenot, Y. Cordier, and B. Jouault
Eur. Phys. J. Appl. Phys., 68, 20102, (2014)
Abstract online (HAL) : click here...

⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers

Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Phys. Stat. Sol. C, 3-4, 498-501, (2014)
Abstract online (HAL) : click here...

⋄ Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature

A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knap, Y. Cordier, S. Chenot, M. Chmielowska, P. Shiktorov, E. Starikov, V. Gruzinskis
Lithuanian Journal of Physics, 54, 58-62, (2014)
Abstract online (HAL) : click here...

⋄ Selective area growth and charcaterization of GaN nanocolumns, with and without an InGaN insertion, on semipolar (11-22) GaN templates

A. Bengoechea-Encabo, S. Albert, J. Zúñiga-Pérez, P. de Mierry, A. Trampert, F. Barbagini, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett., 103, 241905, (2013)

⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates

J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter
Appl. Phys. Lett., 103, 262104, (2013)

⋄ Imaging of photonic modes in an AlN-based photonic crystal probed by an ultra-violet internal light source

C. Brimont, T. Guillet, S. Rousset, D. Néel, X. Checoury, S. David, P. Boucaud, D. Sam-Giao, B. Gayral, M. J. Rashid, and F. Semond
Optics Letters, 38, 5059, (2013)
Abstract online (HAL) : click here...

⋄ Strain evolution in GaN nanowires: from free-surface objects to coalesced templates

M. Hugues, P.A. Shields, F. Sacconi, M. Mexis, M. Auf der Maur, M. Cooke, M. Dineen, A. Di Carlo, D.W.E. Allsopp, and J. Zúñiga-Pérez
J. Appl. Phys., 114, 084307, (2013)

⋄ Chapter 11: Nitride-based electron devices for high-power/high-frequency applications

Y. Cordier, T. Fujishima, B. Lu, E. Matioli, and T. Palacios
III Nitride Semiconductors and their Modern Devices, 1, 366, (2013)

⋄ Optimization of Al0.29Ga0.71N//GaN High Electron Mobility Transistor heterostructures for high power/frequency performances

S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
IEEE Transactions on Electron Devices, 60, 3105, (2013)

⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies
Appl. Phys. Express., 6, 092105, (2013)

⋄ Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, E. Okada, M. Chmielowska, M.R. Ramdani and J.C. De Jaeger
Semicond. Sci. Tech., 28, 094003, (2013)
Abstract online (HAL) : click here...

⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior

D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
Phys. Rev. B, 88, 125437, (2013)
Abstract online (HAL) : click here...

⋄ Advanced photonic and nanophotonic devices, III-nitride semiconductors and their modern devices, éditeur B. Gil, Oxford University Press

J.Y. Duboz
OUP, 10, 330-365, (2013)

⋄ On the growth of Zn1–xMnxO thin films by plasma-assisted MBE

C. Deparis, C. Morhain, J. Zúñiga-Pérez, J.M. Chauveau, H. Kim-Chauveau, P. Vennéguès, M. Teisseire, B. Vinter
Phys. Stat. Sol. C, 10, 1322, (2013)

⋄ GaN doped with beryllium—An effective light converter for white light emitting diodes

H. Teisseyre, M. Bockowski, I. Grzegory, A. Kozanecki, B. Damilano, Y. Zhydachevskii, M. Kunzer, K. Holc, and U.T. Schwarz
Appl. Phys. Lett., 103, 011107, (2013)

⋄ Probing the nature of carrier localization in GaInNAs epilayers by optical methods

Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou
Appl. Phys. Lett., 103, 012104, (2013)

⋄ Plasmon energy from strained GaN quantum wells

M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken
Appl. Phys. Lett., 103, 021901, (2013)

⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano.
Appl. Phys. Lett., 103, 032102, (2013)

⋄ Magnetotransport studies of AlGaN/GaN heterostructures with 2 two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination

W. Desrat, S. Contreras, L. Konczewicz, B. Jouault, M. Chmielowska, S. Chenot, and Y. Cordier
J. Appl. Phys., 114, 023704, (2013)
Abstract online (HAL) : click here...

⋄ Thermal Management for High-Power Single-Frequency Tunable Diode-Pumped VECSEL Emitting in the Near- and Mid-IR

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, A. Garnache
IEEE J Sel Top quantum Electron, 19, 1701108 - 1701108, (2013)
Abstract online (HAL) : click here...

⋄ Fabrication and characterization of a room-temperature ZnO polariton laser

F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, G. Malpuech, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, and J. Zúñiga-Pérez
Appl. Phys. Lett., 102, 191118, (2013)
Abstract online (HAL) : click here...

⋄ Temperature-dependent optical properties of epitaxial CdO thin films determined by spectroscopic ellipsometry and Raman scattering

S.G. Choi, L.M. Gedvilas, S.Y. Hwang, T.J. Kim, Y.D. Kim, J. Zúñiga-Pérez, and V. Munoz-Sanjosé
J. Appl. Phys., 113, 183515, (2013)

⋄ From excitonic to photonic polariton condensate in a ZnO-based microcavity

F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. Lett., 110, 196406, (2013)
Abstract online (HAL) : click here...

⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies
Jpn. J. Appl. Phys., 52, 08JG01, (2013)

⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113, 203501, (2013)

⋄ Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

A. Pérez-Tomás, A. Fontserè, J. Llobet, M. Placidi, S. Rennesson, N. Baron, S. Chenot, J.C. Moreno, and Y. Cordier
J. Appl. Phys., 113, 174501, (2013)

⋄ Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

H. Machhadani, M. Beeler, S. Sakr, E. Warde, Y. Kotsar, M. Tchernycheva, M.P. Chauvat, P. Ruterana, G. Nataf, P. De Mierry, E. Monroy, and F.H. Julien
J. Appl. Phys., 113, 143109, (2013)

⋄ Terahertz transmission and effective gain measurement of two-dimensional electron gas

R. Sharma, T. Laurent, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Phys. Stat. Sol. A, 210, 1454, (2013)
Abstract online (HAL) : click here...

⋄ Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, M. Rousseau, M. Chmielowska, M. Ramdani, and J.C. De Jaeger
IEEE Electron Devices Letters, 34, 490, (2013)
Abstract online (HAL) : click here...

⋄ High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy

R. Oliva, J. Ibañez, L. Artus, R. Cusco, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Appl. Phys., 113, 053514, (2013)

⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates

Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau
Appl. Phys. Express, 6, 042101, (2013)

⋄ Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S.Chenot, J.C. Moreno, S. Rennesson and Y. Cordier
Appl. Phys. Lett., 102, 093503, (2013)

⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier
Phys. Stat. Sol. A, 210, 480-483, (2013)

⋄ Room temperature generation of THz radiation in GaN quantum wells structures

A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knapb, Y. Cordier, S. Chenot, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis
Proc. SPIE, 8624, 862409, (2013)
Abstract online (HAL) : click here...

⋄ Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

N. Defrance, F. Lecourt, Y. Douvry, M. Lesecq, V. Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, J.C. De Jaeger
IEEE Transactions on Electron Devices, 60, 1054, (2013)
Abstract online (HAL) : click here...

⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers

M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès
Semicond. Sci. Tech., 28, 035006, (2013)

⋄ Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons

R. Messina, J.P. Hugonin, J.J. Greffet, F. Marquier, Y. De Wilde, A. Belarouci, L. Frechette, Y. Cordier and P. Ben-Abdallah
Phys. Rev. B, 87, 085421 , (2013)
Abstract online (HAL) : click here...

⋄ Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

P. Sangaré, G. Ducournau, B.Grimbert, V. Brändli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
J. Phys. D: Appl. Phys., 113, 034305, (2013)
Abstract online (HAL) : click here...

⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes

J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies
J. Cryst. Growth, 363, 282, (2013)

⋄ On the interplay of point defects and Cd in non-polar ZnCdO films

A. Zubiaga, F. Reurings, F. Tuomisto, F. Plazaola, J.A. García, A.Yu. Kuznetsov, W. Egger, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Appl. Phys., 113, 023512, (2013)

⋄ Temperature dependence of the direct bandgap and transport properties of CdO

S.K. Vasheghani Farahani, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, C.F. McConville, and T.D. Veal
Appl. Phys. Lett., 102, 022102, (2013)

⋄ Role of magnetic polarons in ferromagnetic GdN

F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87, 035202, (2013)
Abstract online (HAL) : click here...

⋄ Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons

J.H. Buss, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hagele
Appl. Phys. Lett., 103, 092401, (2013)

⋄ Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy

N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies
J. Appl. Phys., 114, 053505, (2013)

⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD

A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742, 117, (2013)
Abstract online (HAL) : click here...

⋄ Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates

T. Bretagnon, L. Beaur, T. Guillet, C. Brimont, M. Gallart, B. Gil, P. Gilliot, C. Morhain
J. Lumin., 136, 355, (2013)
Abstract online (HAL) : click here...

⋄ Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors

A. Perez-Tomas, A. Fontserè, S. Sanchez, M.R. Jennings, P.M. Gammon, and Y. Cordier
Appl. Phys. Lett., 102, 023511 , (2013)

⋄ Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate

J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
Microelec. Engineering, 105, 65, (2013)
Abstract online (HAL) : click here...

⋄ Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

E. Gür, G. Tabares, A. Arehart, J.M. Chauveau, A. Hierro, and S.A. Ringel
J. Appl. Phys., 112, 123709, (2012)

⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate

T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier
Phys. Stat. Sol. C, 10, 425, (2012)
Abstract online (HAL) : click here...

⋄ On the origin of basal stacking faults in nonpolar wurtzite films epitaxiallygrown on sapphire substrates

P. Vennéguès, J.M. Chauveau, Z. Bougrioua, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys., 112, 113518, (2012)

⋄ GaN-based nano rectifiers for THz detection

P. Sangaré, G. Ducournau, B. Grimbert, V. Brändli, M. Faucher, C. Gaquière
IEEE IRMMW, IRMMW - THz 2012, 1-2, (2012)

⋄ Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
ECS Solid State Letters, 2, p4, (2012)

⋄ Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1 )

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno
Mat. Sci. Eng. B, 52, 2547-2550, (2012)

⋄ Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

A. Pérez-Tomás, A. Fontserè, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
Semicond. Sci. Tech., 27, 125010, (2012)

⋄ Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon

F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux
Superlattice Microst, 52, 541, (2012)

⋄ Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen

P. Muret, D. Tainoff, C. Morhain, and J.M. Chauveau
Appl. Phys. Lett., 101, 122104, (2012)
Abstract online (HAL) : click here...

⋄ Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, M.R. Jennings, P.M. Gammon, C.A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria,
Nanotechnology, 23, 395204, (2012)

⋄ Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates

M. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, F. Semond
Solid State Electronics, 75, 86-92, (2012)

⋄ Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson
J. Cryst. Growth, 353, 108, (2012)

⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots

J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont
AIP. Proceedings, 1566, 73, (2012)

⋄ Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

A. Bengoechea-Encabo, S. Albert, M. A. Sanchez-Garcia, L.L. Lopez, S. Estradé, J.M. Rebled, E. Peiro, G. Nataf, P. de Mierry, J. Zúñiga-Pérez, and E. Calleja
J. Cryst. Growth, 353, 1-4, (2012)

⋄ Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria
Appl. Phys. Lett., 101, 093505, (2012)

⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes

P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez
Optics Express, 20, 18707, (2012)

⋄ From strong to weak coupling regime in a single GaN microwire up to room temperature

A. Trichet, F. Médard, J. Zúñiga-Pérez, B. Alloing and M. Richard
New J. Phys., 14, 073004, (2012)
Abstract online (HAL) : click here...

⋄ Searching for THz Gunn oscillations in GaN planar nanodiodes

A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangare, M. Faucher, B. Grimbert, V. Brändli, G. Ducournau, and C. Gaquière
J. Appl. Phys., 111, 113705, (2012)
Abstract online (HAL) : click here...

⋄ Non-linear emission properties of ZnO microcavities

T. Guillet, C. Brimont, P. Valvin, B. Gil, T. Bretagnon, F. Medard, M. Mihailovic, J. Zúñiga-Pérez, F. Semond, S. Bouchoule
Phys. Stat. Sol. C, 9, 1225, (2012)
Abstract online (HAL) : click here...

⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)

A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720, 625, (2012)

⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349, 27, (2012)
Abstract online (HAL) : click here...

⋄ High quality factor AlN nanocavities embedded in a photonic crystal waveguide

D. Sam-Giao, D. Néel, S. Sergent, B. Gayral, M.J. Rashid, F. Semond, J.Y. Duboz, M. Mexis, T. Guillet, C. Brimont, S. David, X. Checoury and P. Boucaud
Appl. Phys. Lett., 100, 191104, (2012)
Abstract online (HAL) : click here...

⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720, 621, (2012)

⋄ LO-phonon-assisted polariton lasing in a ZnO-based microcavity

L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zúñiga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont and T. Guillet
Phys. Rev. B, 85, 121201, (2012)
Abstract online (HAL) : click here...

⋄ Fabrication and properties of etched GaN nanorods

P. Shields, M. Hugues, J. Zúñiga-Pérez, M. Cooke, M. Dineen, W. Wang, F. Causa, and D. Allsopp
Phys. Stat. Sol. C, 9, 631, (2012)

⋄ Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strainevolution and phase separation

M. Korytov, J.A. Budagosky, J. Brault, T. Huault, M. Benaissa, T. Neisius, J.L. Rouvière, and P. Vennégués
J. Appl. Phys., 111, 084309, (2012)

⋄ A graphene electron lens

L. Gerhard, E. Moyen, T. Balashov, I. Ozerov, M. Portail, H. Sahaf, L. Masson, W. Wulfhekel, M. Hanbücken
Appl. Phys. Lett., 100, 153106, (2012)
Abstract online (HAL) : click here...

⋄ Optical investigations of nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells

L. Béaur, T. Bretagnon, B. Gil, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire and J.M. Chauveau
Phys. Stat. Sol. C, 9, 1320, (2012)
Abstract online (HAL) : click here...

⋄ A new approach for AFM cantilever elaboration with 3C-SiC

S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier
Materials Letters , 77, 54, (2012)
Abstract online (HAL) : click here...

⋄ Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier
J. Appl. Phys., 111, 053507, (2012)
Abstract online (HAL) : click here...

⋄ Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

H.P.D. Schenk, A. Bavard, E. Frayssinet, X. Song, F. Cayrel, H. Ghouli, M. Lijadi, L. Naım, M. Kennard, Y. Cordier, D. Rondi and D. Alquier
APEX, 5, 025504, (2012)
Abstract online (HAL) : click here...

⋄ Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure

B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.M. Lamy, M. Akhter, P.P. Maaskant, E. Frayssinet, P. de Mierry, and J.Y. Duboz
Phys. Stat. Sol. C, 9, 931, (2012)

⋄ Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

L.F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.C. Moreno, E. Frayssinet, and F. Semond
J. Appl. Phys., 111, 023511, (2012)

⋄ Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers

S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 711, 84, (2012)

⋄ Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si

X. Song, J. Biscarrat; A. E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Mat. Sci. For., 711, 154, (2012)

⋄ Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC

J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 711, 179, (2012)

⋄ Electromechanical Transconductance Properties of a GaN MEMS Resonator with fully integrated HEMT Transducers

M. Faucher, Y. Cordier, M. Werquin, L. Buchaillot, C. Gaquière and D. Théron
JMEMS, 21, 370-378, (2012)
Abstract online (HAL) : click here...

⋄ High quality factor photonicresonators for nitride quantum dots

T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil, D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud
Phys. Stat. Sol. B, 249, 449, (2012)
Abstract online (HAL) : click here...

⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck
J. Cryst. Growth, 338, 20, (2012)

⋄ Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition

S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier
Mat. Sci. For., 711, 61, (2012)

⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies
Phys. Stat. Sol. A, 209, 465, (2012)

⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)

A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711, 253, (2012)

⋄ Fabrication and growth of GaN-based micro and nanostructures

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9, 412-427, (2012)

⋄ Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents

A. Redondo-Cubero , A. Hierro , J.M. Chauveau , K. Lorenz , G. Tabares , N. Franco , E. Alves and E. Muñoz
CrystEngComm, 14, 1637, (2012)

⋄ Comparison of electrical behavior of GaN-based MOS structures obtained by different PECVD process

E. Al Alam, I. Cortés, T.Begou, A. Goullet, F. Morancho, A. Cazarré, P. Regreny, J. Brault, Y. Cordier, M.P. Besland, K. Isoird
Mat. Sci. For., 711, 228-232, (2012)
Abstract online (HAL) : click here...

⋄ Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)

D.H. Rich, O. Moshe, B. Damilano, and J. Massies
Phys. Stat. Sol. C, 9, 1011, (2012)

⋄ Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

M. Mattalah, A. Soltani, J.C. Gerbedoen, A. Ahaitouf, N. Defrance, Y. Cordier, and J.C. De Jaeger
Phys. Stat. Sol. C, 9, 1083-1087, (2012)
Abstract online (HAL) : click here...

⋄ Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy

Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib
Phys. Stat. Sol. C, 9, 523-526, (2012)

⋄ Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar andsemipolar orientations

P. Vennéguès
Semicond. Sci. Tech., 27, 024004, (2012)

⋄ Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy

Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau
Appl. Phys. Lett., 99, 261910 , (2011)

⋄ Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses

D. H. Rich, O. Moshe, B. Damilano and J. Massies
AIP. Proceedings, 1399, 453, (2011)

⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain

A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9, 175-178, (2011)

⋄ Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC

X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Nucl. Instr. and Method Phys. Research B, 269, 2020, (2011)

⋄ Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)

O. Moshe, D. H. Rich, B. Damilano, and J. Massies
J. Phys. Cond. Mat., 44, 505101, (2011)

⋄ Hybrid cavity polaritons in a ZnO-perovskite microcavity

G. Lanty, S. Zhang, J.S. Lauret, E. Deleporte, P. Audebert, S. Bouchoule, X. Lafosse, J. Zúñiga-Pérez, F. Semond, D. Lagarde, F. Médard, and J. Leymarie
Phys. Rev. B, 84, 195449, (2011)

⋄ AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range

P.E. Malinowski, J.Y. Duboz, P. De Moor, J. John, K. Minoglou, P. Srivastava, F. Semond, E. Frayssinet, B. Giordanengo, A. BenMoussa, A. Gottwald, C. Laubis, R. Mertens, X. Van Hoof
Electron Dev. Lett., 32, 1561, (2011)

⋄ Micro and nano analysis of 0.2W.mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings, M. Porti, A. Bayer, M. Lanza and M. Nafría
Appl. Phys. Lett., 99, 213504, (2011)

⋄ Polariton lasing in a hybrid bulk ZnO microcavity

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 99, 161104, (2011)
Abstract online (HAL) : click here...

⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range

A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110, 084318, (2011)

⋄ Nanopendeo coalescence overgrowth of GaN on etched nanorod array

P. Shields, C. Liu, A. Šatka, A. Trampert, J. Zúñiga-Pérez, B. Alloing, D. Haško, F. Uherek, W. Wang, F. Causa, D. Allsopp
Phys. Stat. Sol. C, 8, 2334, (2011)

⋄ Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition

M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann
J. Cryst. Growth, 328, 13, (2011)

⋄ Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings
Microelectronic Engineering, 88 (10), 3140, (2011)

⋄ Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells

L. Béaur, T. Bretagnon, B. Gil, A. Kavokin, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire, and J.M. Chauveau
Phys. Rev. B, 84, 165312, (2011)
Abstract online (HAL) : click here...

⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin
IEEE FCS, 2011, 1-5, (2011)

⋄ Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber

W. Blanc, V. Mauroy, L. Nguyen, S.N.B. Bhaktha, P. Sebbah, B. Pal, B. Dussardier
J. Am. Ceram. Soc., 94, 2315-2318, (2011)
Abstract online (HAL) : click here...

⋄ Voltage controlled terahertz transmission through GaN quantum wells

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V. Korotyevyev, V. Kochelap
Appl. Phys. Lett., 99, 82101, (2011)
Abstract online (HAL) : click here...

⋄ Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells

G. Tabares, A. Hierro, B. Vinter, and J.M. Chauveau
Appl. Phys. Lett., 99, 071108, (2011)

⋄ Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V.V. Korotyeyev, and V.A. Kochelap
Appl. Phys. Lett., 99, 082101, (2011)

⋄ High quality factor of AlN microdisks embedding GaN quantum dot

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Phys. Stat. Sol. C, 8, 2328, (2011)
Abstract online (HAL) : click here...

⋄ Thermal effects in AlGaN/GaN/Si high electron mobility transistors

I. Saidi, Y. Cordier, M. Chmielowska, H. Mejri and H. Maaref
Solid State Electronics, 61, 1-6, (2011)

⋄ Influence of s,p-d and s−p exchange couplings on exciton splitting in Zn1−xMnxO

W. Pacuski,J. Suffczyński, P. Osewski, P. Kossacki, A. Golnik, J.A. Gaj, C. Deparis, C. Morhain, E. Chikoidze, Y. Dumont, D. Ferrand, J. Cibert, T. Dietl
Phys. Rev. B, 84, 35214, (2011)
Abstract online (HAL) : click here...

⋄ Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes

R. Charash, H. Kim-Chauveau, A. Vajpeyi, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, J.Y. Duboz, and B. Corbett
Phys. Stat. Sol. C, 8, 2378, (2011)

⋄ AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate

D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury, P. Boucaud
Appl. Phys. Lett., 98, 261106, (2011)
Abstract online (HAL) : click here...

⋄ High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Optics Letters, 36, 2203-2205, (2011)
Abstract online (HAL) : click here...

⋄ RF Performance of AlGaN/GaN High Electron Mobility Transistors grown on Silicon (110)

D. Marti, C.R. Bolognesi, Y. Cordier, M. Chmielowska, M. Ramdani
Applied Physics Express, 4, 064105, (2011)

⋄ Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime

L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont and T. Guillet
Appl. Phys. Express, 4, 072001, (2011)
Abstract online (HAL) : click here...

⋄ Laser emission with excitonic gain in a ZnO planar microcavity

T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 98, 211105 , (2011)
Abstract online (HAL) : click here...

⋄ GaN nanocolumns on sapphire by ammonia-MBE: From self-organizedto site-controlled growth

S. Vézian, B. Alloing and J. Zúñiga-Pérez
J. Cryst. Growth, 323, 326, (2011)

⋄ Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

P.E. Malinowski, J.Y. Duboz, P. De Moor, K. Minoglou, J. John, S. Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, and C. Van Hoof
Appl. Phys. Lett., 98, 141104, (2011)

⋄ Electron mobility in CdO films

S.K. Vasheghani Farahani, T.D. Veal, P.D.C. King, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C.F. McConville
J. Appl. Phys., 109, 073712, (2011)

⋄ Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy

D. Taïnoff, M. Al-Khalfioui, C. Deparis, B. Vinter, M. Teisseire, C. Morhain, and J.M. Chauveau
Appl. Phys. Lett., 98, 131915, (2011)

⋄ Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells

J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Morhain, C. Deparis, and B. Vinter
J. Appl. Phys., 109, 102420, (2011)

⋄ Effect of surface preparation and interfacial layer on the quality of GaN/SiO2 interfaces

E. Al Alam, I. Cortés, M.P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho
J. Appl. Phys., 109, 084511, (2011)
Abstract online (HAL) : click here...

⋄ Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates

L. Béaur, T. Bretagnon, C. Brimont, T. Guillet, B. Gil, D. Tainoff, M. Teisseire and J.M. Chauveau
Appl. Phys. Lett., 98, 101913, (2011)
Abstract online (HAL) : click here...

⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties

S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109, 053514, (2011)

⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot
IEEE MEMS, 24th MEMS Int. Conf., 581-584, (2011)
Abstract online (HAL) : click here...

⋄ Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

M. Katsikini, F. Pinakidoua, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, and T.D. Moustakas
Mat. Sci. Eng. B, 176, 723, (2011)

⋄ Electrical characterization of nitrogen implanted 3C-SiC by SSRM and c-TLM measurments

X. Song, A.E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 679-680, 193, (2011)

⋄ Analytical model of stress relaxation in 3C-SiC layers on silicon

M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier
Mat. Sci. For., 679-680, 79, (2011)

⋄ Efficient blocking of planar defects by prismatic stacking faults in semipolar (1122)-GaN layers on m-sapphire by epitaxial lateral overgrowth

B. Lacroix, M.-P. Chauvat, P. Ruterana, G. Nataf, P. de Mierry
Appl. Phys. Lett., 98, 121916, (2011)
Abstract online (HAL) : click here...

⋄ Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy

E. Frayssinet, Y. Cordier, H.P.D. Schenk, and A. Bavard
Phys. Stat. Sol. C, 8, 1479-1482, (2011)

⋄ Growth of GaN based structures on focused ion beam patterned templates

Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.Y. Lo, Y.Y. Hu, A. Ludwig, A.D. Wieck
Phys. Stat. Sol. C, 8, 1516–1519 , (2011)

⋄ Measurement of Pulsed Current–Voltage Characteristicsof AlGaN/GaN HEMTs from Room Temperature to 15 K

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Acta Phys. Pol. A, 119, 196 - 198, (2011)
Abstract online (HAL) : click here...

⋄ The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates

H. Kim-Chauveau, P. de Mierry, J.M. Chauveau and J.Y. Duboz
J. Cryst. Growth, 316, 30, (2011)

⋄ Determination of defect content and defect profile in semiconductor heterostructures

A. Zubiaga, J. A. Garcia, F. Plazaola, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Phys.: Conf. Ser., 265, 012004, (2011)

⋄ Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)

O. Moshe, D.H. Rich, B. Damilano, and J. Massies
Appl. Phys. Lett., 98, 061903, (2011)

⋄ Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov and V. Gruzinskis
Acta Physica Polonica A, 119, 107-110, (2011)
Abstract online (HAL) : click here...

⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez
Appl. Phys. Lett., 98, 011914, (2011)

⋄ Ohmic Contact Resistance dependence on Temperature for GaN devices

A. Pérez-Tomas, A. Fontsere, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon and M.R. Jennings
Mat. Sci. For., 679-680, 816-819, (2011)

⋄ Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime

J.H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A.D. Wieck, and D. Hägele
Phys. Rev. B, 84, 153202, (2011)

⋄ Growth of thick continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard
J. Cryst. Growth, 314, 85-91, (2011)

⋄ MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies

M. Lange, C. P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, and M. Grundmann
J. Vac. Sci. Technol. A, 29, 03A104, (2011)

⋄ Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers

A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla
Phys. Rev. B, 83, 205429, (2011)
Abstract online (HAL) : click here...

⋄ Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, L. Hirsch
J. Cryst. Growth, 312, 3583, (2010)
Abstract online (HAL) : click here...

⋄ Study of the epitaxial relationships between III-nitrides and M-planesapphire

P. Vennéguès, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys., 108, 113521, (2010)

⋄ Blue-green and white color tuning of monolithic light emitting diodes

B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
J. Appl. Phys., 108, 073115, (2010)

⋄ Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

D.H. Rich, O. Moshe, S. Birner , M. Povolotskyi , B. Damilano , J. Massies
J. Appl. Phys., 108, 083510, (2010)

⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett., 97, 171909, (2010)

⋄ Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111)

A. Ouerghi, R. Belkhou, M. Marangolo, M.G. Silly, S. El Moussaoui, M. Eddrief, L. Travers, M. Portail, F. Sirotti
Appl. Phys. Lett., 97, 161905, (2010)
Abstract online (HAL) : click here...

⋄ Epitaxial graphene on 3C-SiC(111) pseudosubstrate: structural and electronic properties

A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, F. Sirotti
Phys. Rev. B, 82, 125445, (2010)
Abstract online (HAL) : click here...

⋄ X-ray detectors based on GaN Schottky diodes

J.Y. Duboz, E. Frayssinet, S. Chenot, J.L. Reverchon, M. Idir
Appl. Phys. Lett., 97, 163504, (2010)

⋄ Complex dielectric function and refractive index spectra of epitaxial CdO thin film grown on r-plane sapphire from 0.74 to 6.45 eV

S.G. Choi, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, A.G. Norman, C.L. Perkins, and D.H. Levi
J. Vac. Sci. Technol. B, 28, 1120, (2010)

⋄ Deposited thin SiO2 for gate oxide on n-type and p-type GaN

M. Placidi, A. Constant, A. Fontserè, E. Pausas, I. Cortes, Y. Cordier, N. Mestres, R. Pérez, M.Zabala, J. Millán, P. Godignon and A. Pérez-Tomás
Journal of the Electrochemical Society, 157, H1008-H1013 , (2010)

⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth

N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry
Nanoscale Res. Lett., 5, 1878, (2010)

⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth, 312 - n° 19, 2683-2688 , (2010)

⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry
J. Cryst. Growth, 312, 2625, (2010)

⋄ Carrier transfer and recombination dynamics of a long-lived and visiblerange emission from multi-stacked GaN/AlGaN quantum dots

J.H. Kim, B.J. Kwon, Y.H. Cho, T. Huault, M. Leroux, J. Brault
Appl. Phys. Lett., 97, 061905, (2010)

⋄ Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N

Y. Arroyo-Rojas Dasilva, M.-P. Chauvat, P. Ruterana, L. Lahourcade, E. Monroy, G. Nataf
J. Phys. Cond. Mat., 22, 355802, (2010)
Abstract online (HAL) : click here...

⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes

M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, and J. Massies
J. Appl. Phys., 108, 033104, (2010)

⋄ Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities

F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J.C. Moreno, F. Semond, M. Leroux, and S. Bouchoule
J. Appl. Phys., 108, 043508, (2010)

⋄ Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates

J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Deparis, C. Morhain, and B. Vinter
Appl. Phys. Lett., 97, 081903, (2010)

⋄ Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses

O. Moshe, D.H. Rich, B. Damilano and J. Massies
J. Vac. Sci.Technol.B, 28, C5E25, (2010)

⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes

M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies
IEEE J Quantum Electron, 46, 1058, (2010)

⋄ Electrical behaviour of lateral Al/n-GaN/Al structures

Z.J. Horvath, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pecza
App. Surf. Science, 256, 5614, (2010)
Abstract online (HAL) : click here...

⋄ Photoemission of Si 1s --> 2pz transition in GaAs/AlGaAs quantum well for zero-dimensional states infrared detection

T. Antoni, M. Carras, X. Marcadet, B. Vinter, and V. Berger
Appl. Phys. Lett., 97, 042102-3, (2010)

⋄ AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, J.C. De Jaeger, C. Gaquière, Y. Cordier, and F. Semond
IEEE Trans. Electron Devices, 57, 1497-1503, (2010)
Abstract online (HAL) : click here...

⋄ Surface band-gap narrowing in quantized electron accumulation layers

P.D.C. King, T.D. Veal, C.F. McConville, J. Zúñiga-Pérez, V. Munõz-Sanjosé, M. Hopkinson, E.D.L. Rienks, M. Fuglsang Jensen, and Ph. Hofmann
Phys. Rev. Lett., 104, 256803, (2010)

⋄ Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

I. Gorczyca, A. Kaminska, G. Staszczak, R. Czernecki, S.P. Łepkowski, T. Suski, H.P.D. Schenk, M. Glauser, R. Butté, J.F. Carlin, E. Feltin, N. Grandjean, N.E. Christensen, and A. Svane
Phys. Rev. B, 81, 235206 , (2010)

⋄ In-clustering effects in InAIN and InGaN revealed by high pressure studies

I. Gorczyca, T. Suski, A. Kaminska, G. Staszczak, H.P.D. Schenk, N.E. Christensen, A. Svane
Phys. Stat. Sol. A, 207, 1369, (2010)

⋄ Analysis of AlGaN/GaN Epi-material on Resistive Si(111) Substrate for MMIC Applications in Millimeter Wave Range

F. Lecourt, Y. Douvry, N. Defrance, V. Hoel, Y. Cordier, J.C. De Jaeger
Proc. of the 5th European Microwave Integrated Circuits Conference, 2010, 33-36, (2010)
Abstract online (HAL) : click here...

⋄ Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf
Appl. Phys. Lett., 96, 231918, (2010)

⋄ Whispering gallery modes in zinc oxide micro- and nanowires

C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann
Phys. Stat. Sol. B, 247, 1282, (2010)

⋄ Luminescence properties of ZnO/Zn1-xCdxO/ZnO double heterostructures

M. Lange, C.P. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann
J. Appl. Phys., 107, 093530, (2010)

⋄ Two-dimensional confined photonic wire resonators: strong light-metter coupling

R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinlander, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, and M. Grundmann
Phys. Stat. Sol. B, 247, 1351, (2010)

⋄ Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation

A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne, M. Portail, M. Zielinski, E. Collard, D. Alquier
Mat. Sci. Eng. B, 171, 120, (2010)

⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C, 1-3, 200983426, (2010)

⋄ Epitaxial graphene on Cubic SiC(111)/Si(111) substrate

A. Ouerghi, A. Kahouli , D. Lucot , M. Portail , L. Travers , J. Gierack , J. Penuelas , P. Jegou , A. Shukla , T. Chassagne , M. Zielinski
Appl. Phys. Lett., 96, 191910, (2010)
Abstract online (HAL) : click here...

⋄ Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN

J. Pedros, F. Calle, R. Cuerdo, J. Grajal, Z. Bougrioua
Appl. Phys. Lett., 96, 123505, (2010)
Abstract online (HAL) : click here...

⋄ Temperature dependence of electron spin relaxation in bulk GaN

J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Phys. Rev. B, 81, 155216, (2010)

⋄ Evidence of electrical activity of extended defects in 3C-SiC grown on Si

X. Song, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Appl. Phys. Lett., 96, 142104, (2010)

⋄ Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructureof Nonpolar AlN Films Grown on (1120) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy

P. Vennéguès, S. Founta, H. Mariette, and B. Daudin
Jpn. J. Appl. Phys., 49, 040201, (2010)
Abstract online (HAL) : click here...

⋄ Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers

M. Carras, G. Maisons. B. Simozrag, M. Garcia, O. Parillaud, J. Massies, X. Marcadet
Appl. Phys. Lett., 96, 161105, (2010)

⋄ Raman scattering of cadmium oxide epilayers grown by metal-organic vapor phase epitaxy

R. Cusco, J. Ibanez, N. Domenech-Amador, L. Artus, J. Zúñiga-Pérez, and V. Munoz-Sanjose
J. Appl. Phys., 107, 063519, (2010)

⋄ Tuning the lateral density of ZnO nanowires arrays and its applications as physical templates for radial nanowire heterostructures

B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, and M. Grundmann
J. Mater. Chem., 20, 3848, (2010)

⋄ Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results

F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, J. Leymarie, M. Mihailovic, D.D. Solnyshkov, G. Malpuech, E. Frayssinet, S. Sergent, F. Semond, M. Leroux, S. Bouchoule
J. Phys.: Conf. Ser., 210, 012026, (2010)

⋄ GaN quantum dots in (Al,Ga)N-based Microdisks

S. Sergent, J.C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, B. Gayral, D. Néel, S. David, P. Boucaud, M. Leroux, F. Semond
J. Phys.: Conf. Ser., 210, 012005, (2010)

⋄ Recent advances in surface preparation of silicon carbide and other wide band gap materials

M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A.E. Bazin, J.F. Michaud, M. Portail
Mat. Sci. For., 645-648, 753-758, (2010)

⋄ Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon

F. Natali, N. O.V. Plank, B. M. Ludbroo, J. Richter, T. Minnee, B. J. Ruck, H. J. Trodahl, J. V. Kennedy, L. Hirsch
Jpn. J. Appl. Phys., 49, 025505, (2010)
Abstract online (HAL) : click here...

⋄ Self-organized growth of ZnO-based nano- and microstructures

M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann
Phys. Stat. Sol. B, 247, 1265, (2010)

⋄ Monolithic integration of AlGaN/GaN HFET with MOS on silicon < 111 > substrates

P.N. Chyurlia, F. Semond , T. Lester , J.A. Bardwell et al
Electron. Lett., 46, 240, (2010)

⋄ Thermally induced surface reorganization of 3C-SiC(111) epilayersgrown on silicon substrates

M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski
Mat. Sci. For., 645-648, 155-158, (2010)

⋄ Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon

S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J.F. Michaud, M. Portail, and D. Alquier
AIP Conf Proc, 1292, 15, (2010)

⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses

M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier
AIP Conf Proc, 1292, 115, (2010)

⋄ Two-Gap Superconductivity in 2H-NbS(2)

Z. Pribulova, M. Leroux, J. Kacmarcik, C. Marcenat, T. Klein, P. Rodiere, L. Cario, P. Samuely
Acta Phys. Pol. A, 118 (5), 1024, (2010)
Abstract online (HAL) : click here...

⋄ Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers

A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648, 585-588, (2010)

⋄ 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

A. Pérez-Tomas, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan and P. Godignon
Mat. Sci. For., 645-648, 1207-1210, (2010)

⋄ SiC on SOI resonators: a route for electrically driven MEMS in harshenvironment

M. Placidi, A. Pérez-Tomás, P. Godignon, N. Mestres, G. Abadal, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648, 845-848, (2010)

⋄ Comparison of GaN-Based MOS Structures with Different Interfacial Layer Treatments

E. Al Alam, I. Cortes, M. P. Besland, P. Regreny, A. Goullet, F. Morancho, A. Cazzare, Y. Cordier, K. Isoird, F. Olivié
Proc. of the 27th conference on microelectronics, 2010, 459, (2010)

⋄ High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature

A.E. Bazin, J.F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, and D. Alquier
AIP Conf Proc, 1292, 51, (2010)

⋄ Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding

R. Charash, H. Kim-Chauveau, J.M. Lamy, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, D. Dräger, J.Y. Duboz, A. Hangleiter and B. Corbett
Appl. Phys. Lett., 98, 201112, (2010)

⋄ Micromachining of thin 3C-SiC films for mechanical properties investigation

J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
ACS Appl. Electron. Mater., 1246, B09-04, (2010)

⋄ Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance

Y. Cordier, N. Baron, M. Azize, S. Chenot
Revue de l Electricite et de l Electronique, 10, 73-77, (2009)

⋄ Anisotropic electron spin relaxation in bulk GaN

J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Appl. Phys. Lett., 95, 192107, (2009)

⋄ Backside illuminated GaN on Si Schottky photodiode for UV radiation detection

P.E. Malinowski, J. John, J.Y. Duboz, A. Lorenz, J.G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J.F. Hochedez and B. Giordaneng
Electron Dev. Lett., 30, 1308, (2009)

⋄ Phase separation in GaN/AlGaN quantum dots

M. Benaissa, L. Gu, M. Korytov, T. Huault, P.A. van Aken, J. Brault, and P. Vennéguès
Appl. Phys. Lett., 95, 141901, (2009)

⋄ Interfacial properties of AlN and oxidized AlN on Si

M. Placidi, A. Perez-Tomas, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi and J. Millán.
surface science, 604, 63, (2009)

⋄ Single-ion anisotropy in Mn-doped diluted magnetic semiconductors

A. Savoyant, A. Stepanov, R. Kuzian, C. Deparis, C. Morhain, and K. Grasza
Phys. Rev. B, 80, 115203, (2009)

⋄ Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 95, 121102, (2009)
Abstract online (HAL) : click here...

⋄ In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

P. Vennéguès, T. Zhu, Z. Bougrioua, D. Martin, J. Zúñiga-Pérez, and N. Grandjean
Jpn. J. Appl. Phys., 48, 090211, (2009)
Abstract online (HAL) : click here...

⋄ Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms

F. Reveret, P. Disseix, J. Leymarie, F. Semond F et al.
Solid State Com., 150, 122, (2009)

⋄ First demonstration and performance of AlGaN based focal plane array for deep-UV imaging

J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir
SPIE procedings, 7474, 74741G, (2009)

⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski
Appl. Phys. Lett., 95, 081903, (2009)

⋄ Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications

H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, A. Dadgar, and A. Krost
J. Cryst. Growth, 311, 3984, (2009)

⋄ Al and Ti/Al contacts on n-GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua
Vacuum, 84, 228, (2009)
Abstract online (HAL) : click here...

⋄ Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al-Suleiman, A. El-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, H.S. Kwack, J. Gu
Nanotechnology, 20, 332001, (2009)

⋄ Perturbing GaN/AlN quantum dots with uniaxial stressors

Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
Phys. Stat. Sol. C, 6, 1432, (2009)

⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers

M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies
Phys. Stat. Sol. C, 6, 1424, (2009)

⋄ Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M.P. Besland
Phys. Stat. Sol. C, 6 - S2, 1016-1019, (2009)
Abstract online (HAL) : click here...

⋄ Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy

P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf
Appl. Phys. Lett., 94, 191903, (2009)

⋄ Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev
J. Appl. Phys., 105, 073703, (2009)
Abstract online (HAL) : click here...

⋄ Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption

F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet
Phys. Rev. B, 79, 125302, (2009)
Abstract online (HAL) : click here...

⋄ Advances in liquid phase conversion of (100) and (111) oriented Si wafers into self standing 3C-SiC

M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel
Mat. Sci. For., 615-617, 49, (2009)
Abstract online (HAL) : click here...

⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates

P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf
Jpn. J. Appl. Phys., 48, 031002, (2009)

⋄ Anomalous photoresponse of GaN X-ray Schottky detectors

J.Y. Duboz, B. Beaumont, J.L. Reverchon and A.D. Wieck
J. Appl. Phys., 105, 114512, (2009)

⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C, 6 - S2, 1020-1023, (2009)

⋄ Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein
J. Stat. Mech., 1, P01046, (2009)
Abstract online (HAL) : click here...

⋄ Recent ROB developments on wide bandgap based UV sensors

B. Giordanengo, A. Ben Moussa, J.F. Hochedez, A. Soltani, P. de Moor, K. Minouglou, P. Malinowski, J.Y. Duboz, Y.M. Chong, Y.S. Zhou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin, and H.X. Jiang
EDP_EAS, 37, 199, (2009)
Abstract online (HAL) : click here...

⋄ Catalytic unzipping of carbon nanotubes to few-layer graphene sheets undermicrowaves irradiation

I. Janowska , O. Ersen , T. Jacob, P. Vennéguès, D. Bégin, M.J. Ledoux, C. Pham-Huu
Applied Catalysis A:General, 371, 22-30, (2009)

⋄ Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

P.D.C. King, T.D. Veal, P.H. Jefferson, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C.F. McConville
Phys. Rev. B, 79, 035203, (2009)

⋄ (Zn, Mg)O/ZnO based heterostructures grown by molecular beam epitaxy on sapphire: polar vs non-polar

J.M. Chauveau, C. Morhain, M. Teisseire, M. Laügt, C. Deparis, J. Zúñiga-Pérez, and B. Vinter
Microelectronics Journal, 40, 512, (2009)

⋄ Epitaxial aluminium nitride on patterned silicon

J. Moreno, E. Frayssinet, F. Semond et al.
Materials Science in Semicond. Processing, 12, 31, (2009)

⋄ Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition

M. Marinova, T. Robert, S. Juillaguet, I. Tsiaoussis, N. Frangis, E. Polychroniadis, J. Camassel, T. Chassagne
Phys. Stat. Sol. A, 206, 1924-1930, (2009)
Abstract online (HAL) : click here...

⋄ Substrates for III−Nitride−based Electroluminescent Diodes

P. de Mierry
LEDs for Lighting Applications, Patrick Mottier (CEA, LETI), Editors ISTE Ltd (UK), 29-73, (2009)

⋄ Polarized photoluminescence from nonpolar (11-20) (Ga,In)N multi-quantum-wells

T. Gühne, Z. Bougrioua, M. Nemoz, R. Cmielowski, T. Bretagnon, B. Gil, M. Leroux
Proc. 29th Int. Conf. Physics of Seminconductors ICPS, 1199, 191, (2009)
Abstract online (HAL) : click here...

⋄ UV Imaging Based on AlGaN Arrays

J.Y. Duboz, J. Brault, J.P. Truffer, J.A. Robot, K. Robin, J.L. Reverchon
Phys. Stat. Sol. (c), S2, S611, (2009)

⋄ Homogeneous core/shell ZnO/ZnMgO quantum well heterostructures on vertical ZnO nanowires

B. Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, and M. Grundmann
Nanotechnology, 20, 305701, (2009)

⋄ Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures

C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga-Pérez, M. Lorenz, and M. Grundmann
J. Vac. Sci. Technol. B, 27, 1780, (2009)

⋄ Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

P.D.C. King, T.D. Veal, A. Schleife, J. Zúñiga-Pérez, B. Martel, P.H. Jefferson, F. Fuchs, V. Munoz-Sanjosé, F. Bechstedt, and C.F. McConville
Phys. Rev. B, 79, 205205, (2009)

⋄ Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities

F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux
Photonics and Nanostructures, 7, 26, (2009)

⋄ GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures

S. Sergent, J.C. Moreno, E. Frayssinet, S. Chenot, M. Leroux, and F. Semond
Applied Physics Express, 2, 051003, (2009)

⋄ Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces

O. Copie, V. Garcia, C. Bödefeld, C. Carrétéro, M. Bibes, G. Herranz, E. Jacquet, J.L. Maurice, B. Vinter, S. Fusil, K. Bouzehouane, H. Jaffrès, and A. Barthélémy
Phys. Rev. Lett., 102, 216804-4, (2009)
Abstract online (HAL) : click here...

⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?

A. Le Louarn, S. Vézian, F. Semond and J. Massies
J. Cryst. Growth, 311, 3278, (2009)

⋄ 8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?

T. Robert, S. Juillaguet, M. Marinova, T. Chassagne, I. Tsiaoussis, N. Frangis, E.K. Polychroniadis and J. Camassel
Mat. Sci. For., 615-617, 339-342, (2009)
Abstract online (HAL) : click here...

⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105, 033701, (2009)

⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
Mat. Sci. For., 600-603, 1277-1280, (2009)

⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2, 715-718, (2009)

⋄ GaN transistor characteristics at elevated temperatures

A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, A. Constant, P. Godignon, and J. Millán
J. Appl. Phys., 106, 074519, (2009)

⋄ High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

L. Bouguen, L. Konczewicz, S. Contreras, B. Jouault, J. Camassel, Y. Cordier
Mat. Sci. Eng. B, 165-1-2, 1-4, (2009)
Abstract online (HAL) : click here...

⋄ Optical investigations of bulk and multi-quantum well nitride-based microcavities

F. Reveret, F. Medard, P. Disseix, F. Semond et al.
Optical Materials, 31, 505, (2009)

⋄ Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration

P. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J.C. Moreno, and N.G. Tarr
Phys. Stat. Sol. A, 206, 371-374, (2009)

⋄ Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source

F. Natali, Y. Cordier, C. Chaix, P. Bouchaib
J. Cryst. Growth, 311, 2029-2032, (2009)

⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells

F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B, 79, 035328, (2009)

⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311, 2002-2005, (2009)

⋄ Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary
Materials Science in Semiconductor Processing, 12, 16-20, (2009)
Abstract online (HAL) : click here...

⋄ Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells

T. Laurent, P. Nouvel, J. Torres, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, J.P. Faurie, B. Beaumont, E. Starikov, P. Shiktorov, V. Gruzinskis
Journal of Physics : Conference Series, 193, 012094, (2009)
Abstract online (HAL) : click here...

⋄ Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahrèche , P. Bove, M. François, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, C. Gaquière, and D. Théron
Appl. Phys. Lett., 94, 233506, (2009)
Abstract online (HAL) : click here...

⋄ Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet

J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz
EAS Publications Series, 37, 207-215, (2009)

⋄ Analysis of the C-V characteristic SiO2/GaN MOS capacitors

I. Cortes, E. Al-Alam, M.P. Besland, P. Regreny, F. Morancho, A. Cazarré, Y. Cordier, A. Goullet and K. Isoird
Proc. 7th Spanish Conference on Electron Devices, 7, 254-257, (2009)
Abstract online (HAL) : click here...

⋄ Infrared detectors based on InGaAsN/GaAs intersubband transitions

J.Y. Duboz, M. Hugues, B. Damilano, A. Nedelcu, P. Bois, N. Kheirodin, F.H. Julien
Appl. Phys. Lett., 94, 022103, (2009)

⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies
Phys. Stat. Sol. (b), 246, 845-845, (2009)

⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range

J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys., 105, 033519, (2009)

⋄ Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy

M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry
Mat. Sci. Eng. B, 165, 42, (2009)

⋄ Towards green lasing: ingredients for a green laser diode based on GaInN

A.D. Dräger, H. Jönen, H. Bremers, U. Rossow, P. Demolon, H.P.D. Schenk, J.Y. Duboz, B. Corbett, and A. Hangleiter
Phys. Stat. Sol. (c), C6 (S2), 792, (2009)

⋄ Anisotropic chemical etching of semipolar {10-1-1}/{10-1+1} ZnO crystallographic planes: polarity versus dangling bonds

E. Palacios-Lidon, B. Pérez-Garcia, P. Vennéguès, J. Colchero, V. Muñoz-Sanjosé, and J. Zúñiga-Pérez
Nanotechnology, 20, 065701, (2009)

⋄ Development of thick GaN-on-silicon layers for rectifier applications

H.P.D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, E. Béraudo, S. Chenot, Y. Cordier, and J.Y. Duboz
EWMOVPE-XIII, D.14, 343-346, (2009)

⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates

M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz
J. Appl. Phys., 105, 083505, (2009)

⋄ Optical and excitonic properties of ZnO films

M. Mihailovic, A. L. Henneghien, S. Faure, P. Disseix, J. Leymarie, A. Vasson, D. A. Buell, F. Semond, C. Morhain, and J. Zúñiga-Pérez
Optical Matérials, 31, 532, (2009)

⋄ Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy

M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier
Mat. Sci. Eng. B, 165, 9, (2009)

⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz
Phys. Stat. Sol. (c), S2, 897, (2009)

⋄ Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault, P. Vennéguès
Appl. Phys. Lett., 94, 143105, (2009)

⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon

M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier
Mat. Sci. For., 615-617, 169, (2009)

⋄ Highly sensitive strained AlN on Si(111) resonators

M. Placidi, J.C. Moreno, P. Godignon, N. Mestres, E. Frayssinet, F. Semond, C. Serre
Sensors and Actuators A: Physical, 150, 64-68, (2008)

⋄ Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with Silicon microelectronics

S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang
J. Cryst. Growth, 311, 2087-2090, (2008)

⋄ Growth and Characterization of Non-Polar (Zn,Mg)O/ZnO Quantum Wells and Multiple Quantum Wells

J.M. Chauveau, B. Vinter, M. Laugt, M. Teisseire, P. Vennéguès, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Kor. Phys. Soc., 53(5), 2934, (2008)

⋄ Mechanisms of ammonia-MBE growth of GaN on SiC for transport devices

H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau
J. Cryst. Growth, 311, 2091-2095, (2008)

⋄ Performance of Unstuck Γ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10GHz

J.C. Gerbedoen, A.Soltani, N. Defrance, M. Rousseau, C. Gaquiere, J.C. De Jaeger, S. Joblot, Y. Cordier
European Microwave Integrated Circuits Conference, 2008, 330-333, (2008)

⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett., 90, 101117, (2008)

⋄ Gallium Nitride: A Nanoscale Study Using Electron Microscopy and Associated techniques

M. Benaissa and P. Vennéguès
Sains Malaysiana, 37(3), 255-259, (2008)

⋄ Mosaicity and stress effects on luminescence properties of GaNMosaicity and stress effects on luminescence properties of GaN

A. Toure, A. Bchetnia, T.A. Lafford, Z.Benzarti, I. Halidou, Z. Bougrioua, B. El Jani
Phys. Stat. Sol. A, 208, 2042, (2008)
Abstract online (HAL) : click here...

⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies
JPhys D:Appl Phys, 41, 155102, (2008)

⋄ Structural and optical properties of Zn(1-x)CdxO solid solutions grown on ZnO substrates by using MOCVD

A. Lusson, N. Hanèche, V. Sallet, P. Galtier, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, S. Agouram, J.A. Bastos Segura, E. Leroy
J. Kor. Phys. Soc., 53, 158, (2008)

⋄ Magnesium diffusion profile in GaN grown by MOVPE

Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani
J. Cryst. Growth, 310, 3274, (2008)
Abstract online (HAL) : click here...

⋄ Luminescence upconversion in GaAs quantum wells

S. Eshlaghi, W. Worthoff, A.D. Wieck, and D. Suter
Phys. Rev. B, 77, 245317, (2008)

⋄ Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory

R. Bardoux, T.y Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77, 235315, (2008)
Abstract online (HAL) : click here...

⋄ Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre
J. Cryst. Growth, 310, 3174-3182, (2008)
Abstract online (HAL) : click here...

⋄ Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka, F. Réveret, R.W. Martin, P.R. Edwards, A. Vasson, J. Leymarie, I. Sellers, J.Y. Duboz, M. Leroux, and F. Semond
Appl. Phys. Lett., 92, 241105, (2008)

⋄ Polarized emission from GaN/AlN quantum dots: single-dot spectroscopy and symmetry-based theory

R. Bardoux, T. Guillet, B. Gil, P. Levebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77, 235315, (2008)
Abstract online (HAL) : click here...

⋄ Influence of the mirrors in the strong coupling regime in planar GaN microcavities

F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies
Phys. Rev. B, 77, 195303, (2008)

⋄ AlGaN photodetectors for applications in the extreme UV range

P. Malinowski, J. John, A. Lorrenz, P.A. Alonso, M. Germain, J. Derluyn, K. Cheng, G. Borghs, R. Mertens, J.Y. Duboz, F. Semond, U. Kroth, M. Richter, J.F. Hochedez, A. Ben Moussa
Proc. SPIE, 7003, , (2008)

⋄ Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots

M. Richter, D. Reuter, J.Y. Duboz, A.D. Wieck
PhysicaE, 40, 1891, (2008)

⋄ Mechanism of mobility increase of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma irradiation

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N; Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev
J. Appl. Phys., 103, 083707, (2008)

⋄ Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua
Vacuum, 82, 794, (2008)
Abstract online (HAL) : click here...

⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart
J. Cryst. Growth, 310, 948, (2008)
Abstract online (HAL) : click here...

⋄ Strong light-matter coupling in GaN-based microcavities grown on silicon substrates

F. Semond, I.R. Sellers, N. Ollier et al.
MRS proceedings, 1068, 95-100, (2008)

⋄ Les substrats pour les diodes électroluminescentes de type III−nitrures

P. de Mierry
Les diodes electroluminescentes pour l eclairage, P. Mottier, Hermès, ISBN 978-2-7462-2097-3, 49−90, (2008)

⋄ Band gap narrowing and radiative efficiency of silicon doped GaN

H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich, and D.H. Rich
J. Appl. Phys., 103, 103502, (2008)

⋄ Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, Y. André
Phys. Rev. B, 77, 045206, (2008)

⋄ Molecular Beam Epitaxy of AlN Layers on Si (111)

J.C. Moreno, E. Frayssinet, F. Semond et al.
MRS symposium proceeding, 1068, 141-145, (2008)

⋄ Temperature dependence of the polariton relaxation bottleneck in a GaN microcavity

F. Stokker-Cheregi, A. Vinattieri, M. Colocci, F. Semond et al.
Phys. Stat. Sol. C, 5, 2257, (2008)

⋄ Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode

T. Gühne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf
Electron. Lett., 44, 231, (2008)

⋄ Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities

K. Bejtka, P.R. Edwards, R.W. Martin, F. Reveret, A. Vasson, J. Leymarie, I.R. Sellers, M. Leroux, and F. Semond
Semicond. Sci. Tech., 8, 045008, (2008)

⋄ Magnetotransport in Gd-implanted wurtzite GaN/AlxGa1−xN high electron mobility transistor structures

F.Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A.D. Wieck
Appl. Phys. Lett., 92, 112111, (2008)

⋄ Electronic structure of single-crystal rocksalt CdO studied by soft x-ray spectroscopies and ab initio calculations

L.F.J. Piper, A. DeMasi, K.E. Smith, A. Schleife, F. Fuchs, F. Bechstedt, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Phys. Rev. B, 77, 125204, (2008)

⋄ Investigation of AlGaN/AlN/GaN Heterostructures for Magnetic Sensor Application from liquid helium temperature to 300°C

L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot, N. Baron
Appl. Phys. Lett., 92, 043504, (2008)
Abstract online (HAL) : click here...

⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities

F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli
Appl. Phys. Lett., 92, 042119, (2008)

⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies
Appl. Phys. Lett., 92, 051911, (2008)

⋄ High doping level in Mg-doped GaN layers grown at low temperature

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean
J. Appl. Phys., 103, 013110, (2008)

⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots

M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck
Semicond. Sci. Tech., 23, 035020, (2008)

⋄ Composition analysis of semiconductor quantum wells by energy filtered convergent beam electron diffraction

D. Jacob, J.M. Zuo, A. Lefebvre, Y. Cordier
Ultramicroscopy, 108, 358–366, (2008)

⋄ Bandgap and effective mass of epitaxial cadmium oxide

P.H. Jefferson, S.A. Hatfield, T.D. Veal, P.D.C. King, C.F. McConville, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Appl. Phys. Lett., 92, 022101, (2008)

⋄ Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy

J.M. Chauveau, M. Laügt, P. Vennéguès, M. Teisseire, B. Lo, C. Deparis, C. Morhain, and B. Vinter
Semicond. Sci. Tech., 23 (3), 035005, (2008)

⋄ Anomalous Hall Effect in Gd-Implanted Wurtzite AlxGa1-N-x/GaN High Electron Mobility Transistor Structures

F.Y Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck
Materials Research Society Symposium Proceedings, 1111, 61-69, (2008)

⋄ Interface structure and anisotropic strain relaxation of non polar wurtzite (11-20) and (10-10) orientations: ZnO epilayers grown on sapphire

J.M. Chauveau, P. Vennéguès, M. Laügt, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Appl. Phys., 104, 073535, (2008)

⋄ Dry etching of N-face GaN using two high-density plasma etch techniques

F. Rizzi, K. Bejtka, F. Semond et al.
Phys. Stat. Sol. C, 4, 200-203, (2008)

⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1, 121101, (2008)

⋄ P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si

A.E. Bazin, J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, J.F. Lecoq, E. Collard, D. Alquier
Mater. Res. Soc. Symp. Proc., 1068, 1068-C07-09, (2008)

⋄ Residual strain in nonpolar a-plane Zn(1−x)MgxO (0< x <0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells

J.M. Chauveau, J. Vives, J. Zúñiga-Pérez, M. Laügt, M. Teisseire, C. Deparis, C. Morhain, and B. Vinter
Appl. Phys. Lett., 93, 231911, (2008)

⋄ In-plane anisotropy characteristics of GaN epilayers grown on A-face sapphire substrates

HJ. Kim-Chauveau, P. De Mierry, H. Cabane, and D. Gindhart
J. Appl. Phys., 104, 113516, (2008)

⋄ Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy

L.F.J. Piper, L. Colakerol, P.D.C. King, A. Schleife, J. Zúñiga-Pérez, P.A. Glans, T. Learmonth, A. Federov, T.D. Veal, F. Fuchs, V. Muñoz-Sanjosé, F. Bechstedt, C.F. McConville and K.E. Smith
Phys. Rev. B, 78, 165127, (2008)

⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
ACS Appl. Electron. Mater., 1068, C04-05, (2008)

⋄ Strong coupling in bulk GaN microcavities grown on silicon

F. Reveret, I.R. Sellers, P. Disseix, F. Semond et al.
Phys. Stat. Sol. C, 4, 108-111, (2008)

⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond
IEEE Electron Device Letters, 29, 1187-1189, (2008)

⋄ AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
J. Cryst. Growth, 310, 4417–4423, (2008)

⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068, 51-56, (2008)

⋄ High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, and E. Muñoz
Phys. Stat. Sol. (c), 5 - n°6, 1971-1973, (2008)

⋄ Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

P. Vennéguès, J.M. Chauveau, M. Korytov, C. deparis, J. Zúñiga-Pérez, and C. Morhain
J. Appl. Phys., 103, 083525, (2008)

⋄ Thickness and substrate effects on AlN thin film growth at room temperature

B. Abdallah, C. Duquenne, M.P. Besland, E. Gautron, P.Y. Jouan, P.Y. Tessier, J. Brault, Y. Cordier, and M.A. Djouadi
Eur. Phys. J. Appl. Phys., 43(3), 309-313, (2008)
Abstract online (HAL) : click here...

⋄ Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates

M. Zielinski, M. Portail, T. Chassagne, Y. Cordier
Mat. Sci. For., 600-603, 207-210, (2008)

⋄ Comparison of GaInN laser structures grown on different substrates

A.D. Dräger, D. Fuhrmann, C. Netzel, U. Rossow, H.P.D. Schenk, and A. Hangleiter
Phys. Stat. Sol. (c), 5, 2277, (2008)

⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001)

S. Pezzagna, S. Vézian, J. Brault, and J. Massies
Appl. Phys. Lett., 92, 23111, (2008)

⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding

S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli
J. Appl. Phys., 103, 123112, (2008)

⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates

M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier
Mater. Res. Soc. Symp. Proc., 1069, 1069-D07-09, (2008)

⋄ Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne
Phys. Stat. Sol. (c), 5, No. 6, 1983–1985, (2008)

⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates

M. Portail, M. Nemoz, M. Zielinski, T. Chassagne
Mat. Sci. For., 600-603, 231, (2008)

⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors

R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson
International Workshop on Nitride Semiconductors, , , (2008)

⋄ GaN for x-ray detection

J.Y. Duboz, M. Laügt, H.P.D. Schenk, B. Beaumont, J.L. Reverchon, A.D. Wieck, and T. Zimmerling
Appl. Phys. Lett., 92, 263501, (2008)

⋄ Characterization of non-polar ZnO layers with positron annihilation spectroscopy

A. Zubiaga, F. Tuomisto, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Acta Physica Polonica A, 114, 1457, (2008)

⋄ Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22)GaN formed by Epitaxial Lateral Overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux
Phys. Rev. B, 77, 075308, (2008)
Abstract online (HAL) : click here...

⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter
Appl. Phys. Lett., 93, 081116, (2008)

⋄ Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy

W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, and A.D. Wieck
Appl. Phys. Lett., 92, 193111, (2008)

⋄ Symmetry of wurtzite nanostructures with the c-axis in the layer plane

P. Tronc and P. Vennéguès
Phys. Rev. B, 77, 075336, (2008)

⋄ Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

T.D. Veal, P.D.C. King, S.A. Hatfield, L.R. Bailey, C.F. McConville, B. Martel, J.C. Moreno, E. Frayssinet, F. Semond, and J. Zúñiga-Pérez
Appl. Phys. Lett., 93, 202108, (2008)

⋄ Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki
J. Appl. Phys., 102, 103701 , (2007)
Abstract online (HAL) : click here...

⋄ AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging

J.L. Reverchon , J.A. Robot, J.P. Truffer, J.P. Caumes, I. Mourad, J. Brault and J.Y. Duboz
SPIE procedings, 6744, 674417, (2007)

⋄ Low Specific Contact Resistance to 3C-SiC grown on (100) Si substrates

A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard; D. Alquier
Mat. Sci. For., 556-557, 721, (2007)

⋄ Trends in nitrogen doping for 3C-SiC films on silicon

M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras and J. Camassel
Mat. Sci. For., 556-557, 207, (2007)

⋄ Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy

P. Muret, J. Pernot, M. Azize, Z. Bougrioua
J. Appl. Phys., 102, 053701, (2007)

⋄ AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication

S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies
European Microwave Integrated Circuits Conference, 2007, 96-99, (2007)
Abstract online (HAL) : click here...

⋄ Structural and electrical characterization of n-type GaN/AlxGa1-xN superlattices grown by metalorganic vapour phase epitaxy

H.P.D. Schenk, P. Demolon, S. Ndiaye, M. Laügt, T. Gühne, Z. Bougrioua, P. de Mierry, J.Y. Duboz, A.D. Dräger, C. Netzel, and A. Hangleiter
Proc. Int. Workshop Nitride Based Nanostruct., , 127, (2007)

⋄ Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells

T. Guillet, T. Bretagnon, T. Taliercio, P. Lefebvre, B. Gil, C. Morhain, X.D. Tang
Superlattice Microst, 41, 352, (2007)
Abstract online (HAL) : click here...

⋄ Magnetic properties of single crystalline Zn1-xCoxO thin films

P. Sati, S. Schafer, C. Morhain, C. Deparis, A. Stepanov
Superlattice Microst, 42, 191, (2007)

⋄ Barrier composition dependence of the internal electric field in ZnO/Zn1-xMgxO quantum wells

T. Bretagnon, P. Lefebvre, T. Guillet, T. Taliercio, B. Gil, C. Morhain
Appl. Phys. Lett., 90, 201912, (2007)
Abstract online (HAL) : click here...

⋄ Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations

T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J.Y. Duboz
J. Appl. Phys., 101, 073510, (2007)

⋄ (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, X.N. Kang, G.Y. Zhang, E. Gu, M.D. Dawson, I.M. Watson, and R.W. Martin
Appl. Phys. Lett., 90, 111112, (2007)

⋄ Antiferromagnetic Interactions in Single Crystalline Zn1-xCoxO Thin Films

P. Sati, C. Deparis, C. Morhain, S. Schafer, and A. Stepanov
Phys. Rev. Lett., 98 (13), 137204-4, (2007)

⋄ Magnetotransport characterization of AlGaN/GaN interfaces

R. Tauk, A. Tiberj, P. Lorenzini, Z. Bougrioua, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Phys. Stat. Sol. A, 204, 586, (2007)

⋄ Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau
Phys. Stat. Sol. (c), 4, n°7, 2670-2673, (2007)

⋄ Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy

J.M. Chauveau, D.A. Buell, M. Laugt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, and C. Morhain
J. Cryst. Growth, 301-302, 366-9, (2007)

⋄ Growth and characterization of A-plane ZnO and ZnCoO based heterostructures

J.M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, M. Tesseire-Doninelli, and G. Neu
Applied Physics A: Materials Science and Processing, 88 (1), 65-9, (2007)

⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots

M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck
Jpn. J. Appl. Phys, 46, 12-16, (2007)
Abstract online (HAL) : click here...

⋄ AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV)

J. John, P. Malinowski, P. Aparicio, J.Y. Duboz, F. Semond et al.
Optical sensing technology and applications, 6585, 33-40, (2007)

⋄ Intersubband transitions in InGaAsN/AlGaAs quantum wells with a high confinement energy

J.Y. Duboz
Phys. Stat. Sol. (c), 7, 2391, (2007)

⋄ Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots: Role of the electron-hole dipole

R. Bardoux, T. Guillet, P. Lefebvre, F. Semond et al.
Physics of semiconductors, B893, 941-942, (2007)

⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE

Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
J. Cryst. Growth, 301-302, 434-436, (2007)

⋄ Energy levels and intersubband transitions in InGaAsN/AlGaAs quantum wells

J.Y. Duboz
Phys. Rev. B, 75, 045327, (2007)

⋄ Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux
Phys. Stat. Sol. (a), 204, n°1, 282-289, (2007)

⋄ Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M.

M. Hugues, B. Damilano, J.Y. Duboz, J. Massies
Phys. Rev. B, 75, 115337, (2007)

⋄ Screening the built-in electric field in 4H silicon carbide stacking faults

S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Appl. Phys. Lett., 90, 111902, (2007)
Abstract online (HAL) : click here...

⋄ AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

S. Boulay, S. Touati, A.A. Sar, V. Hoel, C. Gaquière, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, and J. Massies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, No. 11, 2843-2848, (2007)

⋄ InAs/AlAsSb based quantum cascade lasers

X. Marcadet, C. Renard, M. Carras, M. Garcia, J. Massies
Appl. Phys. Lett., 91, 161104, (2007)

⋄ In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy

Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler
J. Cryst. Growth, 301-302, 71-74, (2007)

⋄ Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)

G. Sarusi, O. Moshe, S. Khatsevich, D.H. Rich, and B. Damilano
Phys. Rev. B, 75, 075306, (2007)

⋄ Deuterium Out-diffusion Kinetics in Magnesium-doped GaN

J. Chevallier, F. Jomard, N.H. Nickel, P. de Mierry, S. Chenot, Y. Cordier, M.A. di Forte-Poisson, and S. Delage
Mat. Res. Soc. Symp. Proc., 994, F03-22, (2007)

⋄ Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. BenMoussa, S. Touati, V. Hoël, J.C. De Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M.A. Djouadi, C. Dua
Diamond and Related Materials, 16, 262–266, (2007)
Abstract online (HAL) : click here...

⋄ Cathodoluminescence investigation of stacking faults extension in 4H-SiC

S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Phys. Stat. Sol. A, 204, 2222-2228, (2007)
Abstract online (HAL) : click here...

⋄ Electric-field screening effects in the micro-photoluminescence spectra of as-grown stacking faults in 4H-SiC

S. Juillaguet, T. Guillet, R. Bardoux, J. Camassel and T. Chassagne
Mat. Sci. For., 556-557, 351-354, (2007)
Abstract online (HAL) : click here...

⋄ From evidence of strong light-matter coupling to polariton emission in GaN microcavities

I.R Sellers, F. Semond, M. Zamfirescu et al.
Phys. Stat. Sol. B, 244, 1882-1886, (2007)

⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties

M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch
Phys. Stat. Sol. (c), 4, No. 1, 137-140, (2007)

⋄ Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells

M. Hugues, B. Damilano, J.M. Chauveau, J.Y. Duboz and J. Massies
Phys. Rev. B, 75, 045313, (2007)

⋄ Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond et al.
Superlattice Microst, 41, 414-418, (2007)

⋄ Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Z. Bougrioua, P. Gibart, E. Calleja, A. Trampert, J. Ristic, M. Utrera, G. Nataf
J. Cryst. Growth, 309, 113-120, (2007)

⋄ Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

A. Zubiaga, J.A. García, F. Plazaola, F. Tuomisto, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
Phys. Rev. B, 75, 205305, (2007)

⋄ Polariton emission in GaN microcavities

M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies
Superlattice Microst, 41, 284, (2007)

⋄ Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots

M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies
Phys. Rev. B, 76 (7), 075335-6, (2007)

⋄ All-optical characterisation of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE grown GaN

T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, A. Kakanakova, E. Janzen, D. Gogova, B. Monemar, M. Heuken
J. Cryst. Growth, 300, 223-227, (2007)

⋄ ZnO micro-pillar resonators with coaxial Bragg reflectors

R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, and M. Grundmann
AIP Conference Proceedings, 893, 1137-1138, (2007)

⋄ Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) andsemipolar (11-22) GaN in relation to microstructural characterization

T. Gühne, M. Albrecht, Z. Bougrioua, P. Vennéguès, and M. Leroux
J. Appl. Phys., 101, 113101, (2007)

⋄ Nanogoniometry with Scanning Force Microscopy: A Model Study of CdTe Thin Films

E. Palacios-Lidón, L. Guanter, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and J. Colchero
Small, 3, 474, (2007)

⋄ Fabrication of monocrystalline 3C-SiC resonators for MHz frequency applications

M. Placidi, P. Godignon, N. Mestres, G. Abadal, G. Ferro, A. Leycuras, T. Chassagne
Sensors and Actuators B, , , (2007)

⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots

R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1, 183-186, (2007)
Abstract online (HAL) : click here...

⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime

F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies
Superlattice Microst, 41, 376, (2007)

⋄ X-ray photoemission studies of the electronic structure of single-crystalline CdO(100)

L.F.J. Piper, P.H. Jefferson, T.D. Veal, C.F.C. McConville, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
Superlattice Microst, 42, 197, (2007)

⋄ AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies
J. Cryst. Growth, 309, 1–7, (2007)

⋄ Monolithic white light emitting diodes with a broad emission spectrum

A. Dussaigne, J. Brault, B. Damilano, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1, 57-60, (2007)

⋄ Photoelectric properties of highly excited GaN-Fe epilayers grown by modulation- and continuous-doping techniques

Z. Bougrioua, M. Azize, B. Beaumont, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarasiunas
J. Cryst. Growth, 300, 228-232, (2007)

⋄ Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras; J. Camassel
Phys. Stat. Sol. (a), 204, 981, (2007)
Abstract online (HAL) : click here...

⋄ Formation and rupture of Schottky nanocontacts on ZnO nanocolumns

B. Pérez-García, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, J. Colchero, and E. Palacios-Lidón
Nano Letters, 7, 1505, (2007)

⋄ Electron Scattering Spectroscopy by High Magnetic Field in Mid-Infrared Quantum Cascade Lasers

A. Leuliet, A. Wade, A. Vasanelli, G. Fedorov, D. Smirnov, M. Giovannini, J. Faist, G. Bastard, B. Vinter, and C. Sirtori
ICPS, AIP Conference Proceedings, 893, 497-498, (2007)
Abstract online (HAL) : click here...

⋄ Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on M-plane sapphire by metalorganic-vapor-phase-epitaxy

P. Vennéguès, Z. Bougrioua and T. Guehne
Jpn. J. Appl. Phys, 46, n° 7A, 4089, (2007)

⋄ Energetically deep defect centers in vapor-phase grown zinc oxide

T. Frank, G. Pensl, R. Tena-Zaera, J. Zúñiga-Pérez, C. Martínez-Tomás,V. Muñoz-Sanjosé, T. Ohshima, H. Itoh, D. Hofmann, D. Pfisterer, J. Sann and B. Meyer
Appl. Phys. A, 88, 141, (2007)

⋄ Structural and morphological characterization of ZnO films grown on GaAs substrates by MOCVD

S. Agouram, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
Appl. Phys. A, 88, 83, (2007)

⋄ Nanoscale determination of surface orientation and electrostatic properties of ZnO thin films

J. Zúñiga-Pérez, E. Palacios-Lidón, V. Muñoz-Sanjosé, and J. Colchero
Appl. Phys. A, 88, 77, (2007)

⋄ X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau and V. Muñoz -Sanjosé
Appl. Phys. A, 88, 61, (2007)

⋄ Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source

S. Vézian, A. Le Louarn and J. Massies
J. Cryst. Growth, 303, 419, (2007)

⋄ Ordered growth of tilted ZnO nanowires: morphological, structural and optical charcaterization

J. Zúñiga-Pérez, A. Rahm, C. Czekalla, J. Lenzner, M. Lorenz, M. Grundmann
Nanotechnology, 18, 195303, (2007)

⋄ Anisotropic morphology of nonpolar a-plane quantum dots and quantum wells

S. Founta, C. Bougerol, H. Mariette, B. Daudin and P. Vennéguès
J. Appl. Phys., 102, 074304, (2007)

⋄ Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors

M. Sakowicz, R. Tauk, J. Lusakowski, A. Tiberj, W. Knap, Z. Bougrioua, M. Azize, P. Lorenzini, K. Karpierz, M. Grynberg
J. Appl. Phys., 100, 113726, (2006)
Abstract online (HAL) : click here...

⋄ Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides

Y.H. Cho, H. S. Kwack, B.J. Kwon, J. Barjon, J. Brault, B. Daudin, Le Si Dang
Appl. Phys. Lett., 89, 251914, (2006)

⋄ Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm

M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3979, (2006)

⋄ 1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate

M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3848, (2006)

⋄ Photoluminescence of single GaN/AlN quantum dots on Si(111): spectral diffusion effects

R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, F. Semond
Phys. Rev. B, 74, 195319, (2006)
Abstract online (HAL) : click here...

⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature

I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa
Phys. Rev. B, 74, 193308, (2006)

⋄ Growth of Ag thin films on ZnO(000-1) investigated by AES and STM

E. Duriau, S. Agouram, C. Morhain, T. Seldrum, R. Sporken, J. Dumont
App. Surf. Science, 253, 549, (2006)

⋄ Spin-exchange interaction in ZnO-based quantum wells

B. Gil, P. Lefebvre, T. Bretagnon, T. Guillet, J.A. Sans, T. Taliercio, and C. Morhain
Phys. Rev. B, 74, 153302, (2006)
Abstract online (HAL) : click here...

⋄ Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate

M. Richter, B. Damilano, J.Y. Duboz, J. Massies, A. Wieck
Appl. Phys. Lett., 88, 231902, (2006)

⋄ Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates

F. Tinjod, P. de Mierry, D. Lancefield, S. Chenot, E. Virey, J.L. Stone-Sundberg, M.R. Kokta, D. Pauwels
Phys. Stat. Sol. (c), (6), 2199-202, (2006)

⋄ Thermodynamical analysis of the shape and size dispersion of In As / In P ( 001 ) quantum dots

A. Michon, I. Sagnes, G. Patriarche, G. Beaudoin, M. Mérat-Combes, G. Saint-Girons
Phys. Rev. B, 73, 16, (2006)
Abstract online (HAL) : click here...

⋄ Magneto-optical spectroscopy of (Zn,Co)O epilayers

W. Pacuski, D. Ferrand, J. Cibert, C. Deparis, P. Kossacki, C. Morhain
Phys. Stat. Sol. B, 243, 863, (2006)

⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11), 113304-1-4, (2006)
Abstract online (HAL) : click here...

⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie
Journal de Physique IV, 132, 365-368, (2006)

⋄ Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer

K. Bejtka, R.W. Martin, I.M. Watson, S. Ndiaye, M. Leroux
Appl. Phys. Lett., 89, 191912, (2006)

⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
Phys. Stat. Sol. (c), 3, N°6, 2325-2328, (2006)

⋄ HIGH TEMPERATURE PULSED MEASUREMENTS OF AlGaN/GaN HEMTs ON HIGH RESISTIVE Si(111) SUBSTRATE

M. Werquin, D. Ducatteau, N. Vellas, E. Delos, Y. Cordier, R. Aubry, and C. Gaquiere
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 48, No. 11, 2303-2305, (2006)

⋄ InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications

M. Richter, B. Damilano, J. Massies, and J.Y. Duboz
Mater. Res. Soc. Symp. Proc., 891, 0891-EE03-29.1, (2006)

⋄ Optimum indium composition for (Ga,In)’(N,As) /GaAs quantum wells emitting beyond 1.5µm

M. Hugues, B. Damilano, J.Y. Duboz, and J. Massies
Appl. Phys. Lett., 88, 91111, (2006)

⋄ investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

M. Benaissa, P. Vennéguès, O. Tottereau, L. Nguyen and F. Semond
Appl. Phys. Lett., 89, 231903, (2006)

⋄ Role of elastic scattering mechanisms in GaInAs/AlInAs quantum cascade lasers

A. Vasanelli, A. Leuliet, C. Sirtori, A. Wade, G. Fedorov, D. Smirnov, G. Bastard, B. Vinter, M. Giovannini, and J. Faist
Appl. Phys. Lett., 89 (17), 172120-3, (2006)
Abstract online (HAL) : click here...

⋄ Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature

I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson
Phys. Stat. Sol. (b), 243(7), 1639, (2006)
Abstract online (HAL) : click here...

⋄ Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau
Superlattice Microst, (40), 359-362, (2006)

⋄ Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications

E. Feltin, J.F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, and N. Grandjean
Appl. Phys. Lett., 88, 051108, (2006)

⋄ Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co

P. Sati, R. Hayn, R. Kuzian, S. Regnier, S. Schafer, A. Stepanov, C. Morhain, C. Deparis, M. Laügt, M. Goiran, Z. Golacki
Phys. Rev. Lett., 96, 017203-4, (2006)

⋄ Solar blind AlGaN photodetectors with a very high spectral selectivity

J.Y. Duboz , N. Grandjean, A. Dussaigne, M. Mosca, J.L. Reverchon, P.G. Verly, R.H. Simpson
Eur. Phys. J. Appl. Phys., 33, 5, (2006)

⋄ Room temperature Strong coupling in low finesse GaN microcavities

I.R. Sellers, F. Semond, M. Leroux, et al.
MRS symposium, 892, 485-490, (2006)
Abstract online (HAL) : click here...

⋄ Strong coupling of light with A and B excitons in GaN microcavities grown on silicon

I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson
Phys. Rev. B, 73, 033304, (2006)
Abstract online (HAL) : click here...

⋄ Sensitivity of synchrotron radiation x-ray diffraction to the chemical ordering in epitaxial perovskite multilayers

M. Nemoz, E. Dooryhee, J.L. Hodeau, C. Dubourdieu, H. Roussel, P. Bayle-Guillemaud
J. Appl. Phys., 100, 124110, (2006)
Abstract online (HAL) : click here...

⋄ Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

T. Bretagnon, P. Lefebvre, P. Valvin, B. Gil, C. Morhain, X.D. Tang
J. Cryst. Growth, 287, 12, (2006)
Abstract online (HAL) : click here...

⋄ Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study

B. Boudjelida, I. Gee, J. Evans-Freeman, S.A. Clark, M. Azize, J.M. Bethoux, and P. de Mierry
Phys. Stat. Sol. C, 3, 1823, (2006)
Abstract online (HAL) : click here...

⋄ AlGaN/GaN HEMTs on (001) silicon substrates

S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies
Electron. Lett., 42, 117-118, (2006)

⋄ Generation-recombination reduction in InAsSb photodiodes

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger
Semicond. Sci. Tech., 21 (12), 1720-3, (2006)

⋄ Field-effect-modulated SAW devices on AlGaN/GaN heterostructures

J. Pedros, R. Cuerdo, F. Calle, J. Grajal, J.L. Martinez-Chacon, Z. Bougrioua
IEEE Ultrasonics Symposium, 2006, 273-276, (2006)

⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies
Superlattice Microst, 40, 295-299, (2006)

⋄ Fast, high-efficiency, and homogeneous room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire

M. Lorenz, R. Johne, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann, H.P.D. Schenk, S.I. Borenstain, A. Schön, C. Bekeny, T. Voss, and J. Gutowski
Appl. Phys. Lett., 89, 243510, (2006)

⋄ Application of LTPL Investigation Methods to CVD-Grown SiC

J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud
Chem. Vap. Deposition, 12, 549–556, (2006)
Abstract online (HAL) : click here...

⋄ Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grownon Si(100)

G. Ferro, T. Chassagne, A. Leycuras, F. Cauwet, Y. Monteil
Chem. Vap. Deposition, 12, 483–488, (2006)

⋄ Epitaxial orientation of III-Nitrides grown on R-plane sapphire by metalorganic-vapor-phase-epitaxy

P. Vennéguès and Z. Bougrioua
Appl. Phys. Lett., 89, 111915, (2006)

⋄ Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE

V.G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K.S. Zhuralev, P. Vennéguès
Phys. Stat. Sol. (c), 3, No.6, 1548, (2006)

⋄ Characterization of structural defects in GaN films grown on sapphire substrates

P. Vennéguès, F. Mathal, and Z. Bougrioua
Phys. Stat. Sol. (c), 3/6, 1658-1661, (2006)

⋄ Stress relaxation during the growth of 3C-SiC/Si thin films

M. Zielinski, A. Leycuras, S. Ndiaye, T. Chassagne
Appl. Phys. Lett., 89, 131906, (2006)

⋄ Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFTES Measured in Strong Inversion

A. Pérez-Tomas, M. Vellvehi, N. Mestres, J. Millan, P. Vennéguès and J. Stoemenos
Mat. Sci. For., 527-529, 1059, (2006)

⋄ On the determination of the structural parameters of GaxIn1-xAs/AlAsySb1-y superlattices by X-ray diffraction

C. Renard, X. Marcadet, J. Massies
J. Cryst. Growth, 297, 272, (2006)

⋄ Properties of (InGa)As/GaAs QW (1200 nm) facet-coated edge-emitting diode laser

T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovác, J. Kovác, Jr., R. Schmidt-Grund, B. Rheinländer, and D. Pudis
Laser Physics, 16, 441, (2006)

⋄ Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

T. Malinauskas, K. Jarasiunas, S. Miasojedovas, S. Jursenas, B. Beaumont, P. Gibart
Appl. Phys. Lett., 88, 202109, (2006)

⋄ Structural evaluation of GaN/sapphire grownby epitaxial lateral overgrowth by X-ray microdiffraction

M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont, and P. Gibart
Phys. Stat. Sol. (b), 243, No. 7, 1545–1550, (2006)
Abstract online (HAL) : click here...

⋄ Effect of the s,p-d exchange interaction on the excitons in Zn1-xCoxO epilayers

W. Pacuski, D. Ferrand, J. Cibert, C. Deparis, J. A. Gaj, P. Kossacki, and C. Morhain
Phys. Rev. B, 73 (3), 035214-13, (2006)
Abstract online (HAL) : click here...

⋄ An AlGaN Based Linear Array for UV Solar Blind Imaging from 240 nm to 280 nm

G. Mazzeo, J.L. Reverchon, J.Y. Duboz, A. Dussaigne
IEEE Sensors Journal, 6(4), 957-63, (2006)

⋄ Cylindric resonators with coaxial Bragg reflectors

R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, and M. Grundmann
Proc. SPIE, 6038, 603827, (2006)

⋄ Investigation of the optical properties of epitaxial-lateral-overgrown GaN on R- and M-sapphire

T. Gühne, Z. Bougrioua, M. Albrecht, P. Vennéguès, M. Leroux, M. Laügt, S. Ndiaye, M. Teisseire, L. Nguyen, and P. Gibart
Mater. Res. Soc. Symp. Proc., 955, 0955-I12-04, (2006)

⋄ Structural characterisation of Sb-based heterostructures by X-ray scattering methods

C. Renard, O. Durand, X. Marcadet, J. Massies, O. Parillaud
Applied Surface Science, 253, 112, (2006)

⋄ Diodes électroluminescentes blanches pour l'éclairage

B. Damilano, J. Brault, A. Dussaigne, J. Massies
Images de la Physique, , 86, (2006)

⋄ Optoelectronic properties of GaN epilayers in the region of yellow luminescence

C. Grazzi, H.P. Strunk, A. Castaldini, A. Cavallini, H.P.D. Schenk, and P. Gibart
J. Appl. Phys., 100, 073711, (2006)

⋄ Investigation of the interface properties of MOVPE grown AlGaN/GaN highelectron mobility transistor (HEMT) structures on sapphire

T. Aggerstam, S. Lourdudoss, H.H. Radamson, M. Sjödin, P. Lorenzini, D.C. Look
Thin Solid Films, 515, 705–707, (2006)

⋄ Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells

C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis
Phys. Rev. B, 72 (24), 241305-4, (2005)
Abstract online (HAL) : click here...

⋄ Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers from 1.29 to 1.52 µm

J.M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hughes, J.Y. Duboz, J. Massies
Appl. Phys. Lett., 87, 251109, (2005)

⋄ Quantum and transport lifetimes of two-dimentional electrons gas in AlGaN/GaN heterostructures

P. Lorenzini, Z. Bougrioua, A. Tiberj, R. Tauk, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Appl. Phys. Lett., 87, 232107, (2005)

⋄ Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕GaN heterostructures

P. Lorenzini, Z. Bougrioua, A. Tiberj, R. Tauk, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Appl. Phys. Lett., 87, 232107, (2005)
Abstract online (HAL) : click here...

⋄ Status of AlGaN based Focal Plane Arrays for UV solar blind detection

J.L. Reverchon, G. Mazzeo, A. Dussaigne, J.Y. Duboz
Proc. SPIE, 5964, 596402, (2005)

⋄ High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy

S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies
Appl. Phys. Lett., 87, 133505, (2005)
Abstract online (HAL) : click here...

⋄ Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes

J.M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sánchez, A. Guzmán, B. Damilano , J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, and A. Trampert
Proc. SPIE Int. Soc. Opt. Eng., 5840, 81, (2005)

⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon

F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson
Appl. Phys. Lett., 87, 021102, (2005)
Abstract online (HAL) : click here...

⋄ Carrier profiles in Fe doped GaN layers grown by MOVPE

M. Azize, Z. Bougrioua, P. Girard, and P. Gibart
Phys. Stat. Sol. (c), 2, 5, 2153-2156, (2005)
Abstract online (HAL) : click here...

⋄ Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

Z. Bougrioua, M. Azize, A. Jimenez, A.F. Braña, P. Lorenzini, B. Beaumont, E. Muñoz, and P. Gibart
Phys. Stat. Sol. (c), 2, 7, 2424-2428, (2005)

⋄ LP MOVPE growth and characterization of high Al content AlxGa1−xN epilayers

C. Touzi, F. Omnès, B. El Jani and P. Gibart
J. Cryst. Growth, 279, 31-36, (2005)

⋄ Characterization of high-k Ta/sub 2/Si oxidized films on 4H-SiC and Si substrates as gate insulator

A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millan, N. Mestres, P. Vennéguès and J. Stoemenos
J. Electrochem. Soc., 152(4), G259-65, (2005)

⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells

F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71, 75311, (2005)

⋄ Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE

Z. Bougrioua, M. Azize, P. Lorenzini, M. Laügt, H. Haas
Phys. Stat. Sol. (a), 202, No. 4, 536-544, (2005)

⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie
Phys. Stat. Sol. (c), 2, No. 7, 2195-2198, (2005)

⋄ Single-Transverse-Mode InGaAsP/InP Edge-Emitting Bipolar Cascade Laser

F. Dross, F. Van Dijk, O. Parillaud, B. Vinter, and N. Vodjdani
IEEE J. Quant. Electr., 41, 1356-60, (2005)

⋄ Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy

R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A. Diforte-Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys., 30 (2), 77-82, (2005)

⋄ High temperature electrical investigations of (Al,Ga)N/GaN heterostructures - Hall sensor applications

C. Consejo, S. Contreras, L. Konczewiez, P. Lorenzini, Y. Cordier, C. Skierbiszewski, J.L. Robert
Phys. Stat. Sol. (c), (4), 1438-43, (2005)
Abstract online (HAL) : click here...

⋄ Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE

A. Hierro, J.M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies
Proc. SPIE Int. Soc. Opt. Eng., 5840, 72, (2005)

⋄ Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures

J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies
Proc. Material Research Society Spring Meeting, 864, 579-584, (2005)

⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie
J. Cryst. Growth, 278/1-4, 383-386, (2005)

⋄ (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers

B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, A. Hierro
Proc. SPIE Int. Soc. Opt. Eng., 5840, 781, (2005)

⋄ Interface band gap engineering in InAsSb photodiodes

M. Carras, J. L. Reverchon, G. Marre, C. Renard, B. Vinter, X. Marcadet, and V. Berger
Appl. Phys. Lett., 87 (10), 102103-3, (2005)

⋄ Structural and Electronic Properties of ZnMgO/ZnO Quantum Wells

C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, and G. Neu
Superlattice Microst, 38, 455-463, (2005)

⋄ Optoelectronica (en russe/in Russian)

E. Rosencher & B. Vinter
Technosphera, Moskva, , 1-592, (2005)

⋄ Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy

A. Hierro, J.M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies
IEEE Photon. Techno. Letters, 17, Issue: 6, 1142-1144, (2005)

⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth, 278/1-4, 393-396, (2005)

⋄ Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well

M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, and A. Hierro
Electron. Lett., 41 No.10, 595, (2005)

⋄ Light-ion beam analysis for microelectronic applications

L. Hirsch, P. Tardy, G. Wantz, N. Huby, P. Moretto, L. Serani, F. Natali, B. Damilano, J. Y. Duboz and J. L. Reverchon
Nucl Inst and MethodB, 240, 265, (2005)
Abstract online (HAL) : click here...

⋄ Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers

B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, A. Hierro, J.M. Ulloa, and E. Calleja
Appl. Phys. Lett., 86, 071105, (2005)

⋄ Characterisation of differently grown GaN epilayers by time-resolved four-wave mixing technique

K. Jarašiunas, T. Malinauskas, R. Aleksiejunas, M. Sudžius, E. Frayssinet, B. Beaumont, J.P. Faurie and P. Gibart
Phys. Stat. Sol. (a), 202, No. 4, 566– 571, (2005)

⋄ Electron mobility and transfer characteristics in AlGaN/GaN HEMTs

Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies
Phys. Stat. Sol. (c), 2, No. 7, 2720-2723, (2005)

⋄ Control of 3C–SiC/Si wafer bending by the “checker‐board” carbonization method

T. Chassagne, G. Ferro, H. Haas, H. Mank, A. Leycuras, Y. Monteil, F. Soares, C. Balloud, Ph. Arcade, C. Blanc, H. Peyre, S. Juillaguet, J. Camassel
Phys. Stat. Sol. (a), 202, No. 4, 524–530, (2005)
Abstract online (HAL) : click here...

⋄ AlGaInN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques

G. Blume, T.J.C. Hosea, S.J. Sweeney, P. de Mierry, D. Lancefield
IEEE Proceedings Optoelectronics., 152(2), 118-24, (2005)

⋄ Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities

K. Bejtka, F. Rizzi, P. R. Edwards, R.W. Martin, E. Gu, M.D. Dawson, I.M. Watson, I.R. Sellers, F. Semond
Phys. Stat. Sol. (a), 202, 2648, (2005)

⋄ Anisotropy-induced polarization mixture of surface acoustic waves in GaN/c-sapphire heterostructures

J. Pedros, F. Calle, J. Grajal, R.J. Jimenez Rioboo, Y. Takagaki, K.H. Ploog and Z. Bougrioua
Phys. Rev. B, 72, 075306, (2005)

⋄ Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennéguès, A. Leycuras
Mat. Sci. For., 483-485, 213-216, (2005)

⋄ Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes

F. Tinjod, P. de Mierry, D. Lancefield, Z. Bougrioua, S. Laugt, O. Tottereau, P. Lorenzini, S. Chenot, E. Virey, M.R. Kokta, J.L. Stone-Sundberg, D. Pauwels
J. Cryst. Growth, 285(4), 450-8, (2005)

⋄ Behaviour of the 3C-SiC(100) c(2×2) (C-terminated) and 3×2 (Si-rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures

M. Portail, S. Saada, S. Delclos, J.C. Arnault, P. Soukiassian, P. Bergonzo, T. Chassagne, A. Leycuras
Phys. Stat. Sol. (a), 202, No. 11, 2234-2239, (2005)

⋄ Origin of Below Band-Gap Photoluminescence from GaN Quantum Dots in AlN Matrix

K.S. Zhuravlev, D.D. Ree, V.G. Mansurov, A. Yu. Nikitin, M. Teisseire, N. Grandjean, G. Neu, and P. Tronc
AIP Conference Proceedings, 772, 719, (2005)

⋄ Spin Carrier Exchange Interactions in (Ga,Mn)N and (Zn,Co)O Wide Band Gap Diluted Magnetic Semiconductor Epilayers

D. Ferrand, S. Marcet, W. Pacuski, E. Gheeraert, P. Kossacki, J.A. Gaj, J. Cibert, C. Deparis, H. Mariette, and C. Morhain
Journal of Superconductivity and Novel Magnetism, 18, 15, (2005)

⋄ High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

D. Gogova, H. Larsson, A. Kasic, G. Reza Yazdi, I. Ivanov, R. Yakimova, B. Monemar, E. Aujol, E. Frayssinet, J.P. Faurie, B. Beaumont and P. Gibart,
Jpn. J. Appl. Phys, 44, 1181-1185, (2005)

⋄ High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN

D. Cai, F. Xu, J. Kang, P. Gibart and B. Beaumont
Appl. Phys. Lett., 86, 211917, (2005)

⋄ Transmission electron microscopy of GaN layers grown by ELO and micro-ELO techniques

B. Pécz, Zs. Makkai, E. Frayssinet, B. Beaumont and P. Gibart
Phys. Stat. Sol. (c), 2, No. 4, 1310-1313, (2005)

⋄ First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, M. Germain, J.C. De Jaeger and C. Gaquière
IEE Microwave and Optical Technology Letters, 46, 4, 311-315, (2005)
Abstract online (HAL) : click here...

⋄ Solar blind detectors based on AlGan grown on sapphire

J.Y. Duboz, N. Grandjean, F. Omnès, J.L. Reverchon, M. Mosca
Phys. Stat. Sol. (c), N3, 964-971, (2005)

⋄ Relaxation Mechanisms in MOVPE grown Al rich (Al,Ga)N/GaN Hetero-Structures

P. Vennéguès, Z. Bougrioua, J.M. Bethoux, M. Azize, O. Tottereau
J. Appl. Phys., 97, 4912, (2005)

⋄ Free energy and capture cross section of the E2 trap in n-type GaN

J. Pernot, C. Ulzhöfer, P. Muret, B. Beaumont and P. Gibart
Phys. Stat. Sol. (a), 202, No. 4, 609-613, (2005)

⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing

M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies
Proc. ESPC, 151(5), 433-436, (2005)

⋄ Ductile relaxation in cracked metal-organis chemical-vapor-deposition-grown AlGaN films on GaN

J.M. Bethoux and P. Vennéguès
J. Appl. Phys., 97, 123504, (2005)

⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1)

S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier
J. Cryst. Growth, 280, 44-53, (2005)

⋄ Growth of GaN/AlxGa1-xN-based Bragg reflectors on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition: Towards group III-nitride microcavities

H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, P. Wisniewski, S. Grzanka, M. Krysko, O. Tottereau, P. Vennéguès, P. Perlin, M. Leszczynski, and T. Suski
Proc. 9th Ann. Nanophys. Nanoel. Symp., , 338-339, (2005)

⋄ Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulkcrystals and heterostructures of GaN

K. Jarašiunas, T. Malinauskas, A. Kadys, R. Aleksiejunas, M. Sudžius, S. Miasojedovas, S. Juršenas, A. Žukauskas, D. Gogova, A. Kakanakova-Georgieva, E. Janzén, H. Larsson, B. Monemar, P. Gibart, and B. Beaumont
Phys. Stat. Sol. (c), 2, No. 3, 1006– 1009, (2005)

⋄ Faceting and structural anisotropy of nanopatterned CdO (110) layers

J. Zúñiga-Pérez, C. Martinez-Tomas, V. Muñoz-Sanjosé, C. Munuera, C. Ocal, M. Laügt
J. Appl. Phys., 98, 034311, (2005)

⋄ Spectroscopy of a bulk GaN microcavity grown on Si(111)

N. Ollier, F. Natali, D. Byrne, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond Et J. Massies
Jpn. J. Appl. Phys, 44, 4902, (2005)
Abstract online (HAL) : click here...

⋄ Submicron periodic poling and chemical patterning of GaN

S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies
Appl. Phys. Lett., 87, 062106, (2005)

⋄ Surface morphology of AlN and size dispersion of GaN quantum dots

A. Matsuse, N. Grandjean, B. Damilano Et J. Massies
J. Cryst. Growth, 274, 387, (2005)

⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c), 2, No. 7, 2187-2190, (2005)

⋄ Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates

C. Renard, X. Marcadet, J. Massies Et O. Parillaud
J. Cryst. Growth, 278, 193, (2005)

⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy

F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies
Sol. Stat. Comm., 132, 679, (2004)

⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy

M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36, 659, (2004)

⋄ Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC

A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millian, N. Mestres, P. Vennéguès and J. Stoemenos
Electrochem. Solid-State Lett., 7, F93, (2004)

⋄ Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs

A. Rebey, Z. Chine, W. Fathallah, B. El Jani, E. Goovaerts, S. Laügt
Microelectronics Journal, 35:11, 875-880, (2004)

⋄ Optical properties of edge emitting semiconductor laser diodes with coated Bragg mirror

J. Kovác, F. Uherek, D. Pudis, V. Gottschalch, G. Leibiger, T. Gühne, and B. Rheinländer
IEEE conference proceedings, , , (2004)

⋄ Potentialities of GaN-based microcavities in strong coupling regime at room temperature

N. Ollier, F. Natali, D. Byrne, P. Disseix, A. Vasson, J. Leymarie, F. Semond, J. Massies
Superlattices Microstruct., 34, 599-606, (2004)
Abstract online (HAL) : click here...

⋄ Performances of AlGaN/GaN HEMTs in Planar Technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, M. Germain, J.C. De Jaeger, C. Gaquière
Proc. 12th GaAs and other Comp. Sem. Appl. Symp., , 303-306, (2004)
Abstract online (HAL) : click here...

⋄ Anisotropic propagation of surface acoustic waves on nitride layers

J. Pedrós, F. Calle, J. Grajal, R.J. Jiménez Riobóo, C. Prieto, J.L. Pau, J. Pereiro, M. Hermann, M. Eickhoff and Z. Bougrioua,
Superlattice Microst, 36, Issues 4-6, 815-823, (2004)

⋄ Efficiency optimization of p-type doping in GaN:Mg layers grown by Molecular-Beam Epitaxy

F. B. Naranjo, E. Calleja, Z. Bougrioua, A. Trampert, X. Kong, K. H. Ploog
J. Cryst. Growth, 270, issues 3-4, 815-823, (2004)

⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy

B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies
IEE Proc.-Optoelectron., 151, No. 5, 433-436, (2004)

⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (b), 241, Issue 12, 2779-2782, (2004)

⋄ Polarity inversion of GaN(0001) by a high Mg doping

S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies
J. Cryst. Growth, 269, 249, (2004)

⋄ Highly regular nanometer-sized hexagonal pipes in 6H-SiC

W. Wulfhekel, D. Sander, S. Nitsche, A. Leycuras and M. Hanbücken
Applied Physics A, 79, 411-413 1, (2004)

⋄ Electrical characterisation of hole traps in n-type GaN

F. D. Auret, W. E. Meyer, L. Wu, M. Hayes, M. J. Legodi, B. Beaumont and P. Gibart
Phys. Stat. Sol. (a), 201(10), 2271-2276, (2004)

⋄ Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors

R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A.D. Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys., 27(1-3), 293-6, (2004)

⋄ GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties

C. Grazzi, A. Castaldini, A. Cavallini, H.P.D. Schenk, P. Gibart, and H. P. Strunk
Eur. Phys. J. Appl. Phys., 27, 193, (2004)

⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties

M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies
Eur. Phys. J. Appl. Phys., 257, 259-262, (2004)

⋄ Multilayer (Al,Ga)N structures for solar-blind detection

M. Mosca, J.L. Reverchon, N. Grandjean, J.Y. Duboz
IEEE J. Selec. Topics in Quant. Electronics, 10, 752, (2004)

⋄ Plastic relaxation through buried cracks in AlGaN/GaN heterostructures

J.M. Bethoux, P. Vennéguès, M. Laügt and P. De Mierry
Eur. Phys. J. Appl. Phys., 257, 263-265, (2004)

⋄ Structural reorganisation of vicinal surfaces on 6H-SiC(0001) induced by hot hydrogen etching

W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras, M. Hanbucken
Applied Surface Science, 234 (1-4), 251-255, (2004)

⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride

S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science, 234, 445, (2004)

⋄ Thermal characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and an pulsed I-V measurements

R. Aubry, J.C. Jacquet, C. Dua, H. Gérard, B. Dessertenne, M.A. Di Forte-Poisson, Y. Cordier and S.L. Delage
Mat. Sci. For., 457-460, 1625-1628, (2004)

⋄ Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes

J. M. Ulloa, A. Hierro, J. Miguel-Sánchez, A. Guzmán, E. Tournié, J. L. Sánchez-Rojas, and E. Calleja
Appl. Phys. Lett., 85, 40, (2004)
Abstract online (HAL) : click here...

⋄ Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal

T. Chassagne, A. Leycuras, C. Balloud, P. Arcade, H. Peyre, S. Juillaguet
Mat. Sci. For., 457-460, 273-276, (2004)
Abstract online (HAL) : click here...

⋄ Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-UV

J. L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schule, E. Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart
J. Appl. Phys., 95, 8275, (2004)

⋄ Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown Si (100) substrates

T. Chassagne, G. Ferro, H. Haas, A. Leycuras, H. Mank, Y. Monteil
Mat. Sci. For., 457-460, 265-268, (2004)

⋄ Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pecz, P. Gibart, B. Beaumont
J. Appl. Phys., 96, 799-806, (2004)

⋄ Low frequency noise behavior in GaN HEMT's on silicon substrate

L. Bary, E. Angeli, A. Rennane, G. Soubercaze-Pun, J.G. Tartarin, A. Minko, V. Hoel, Y. Cordier, C. Dua, R. Plana, J. Graffeuil
Proc. SPIE, 5470, 286-295, (2004)

⋄ Phonon deformation potential in hexagonal GaN

F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69, 155215, (2004)

⋄ Group III-nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy

H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, S. Grzanka, M. Krysko, P. Prystawko, P. Wisniewski, M. Leszczynski, G. Franssen, J. Muszalski, T. Suski, and P. Perlin
Phys. Stat. Sol. (c), 1, 193, (2004)

⋄ High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates

A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 25, No.4, 167-169, (2004)
Abstract online (HAL) : click here...

⋄ Spectroscopy of the electron states in self-organized GaN/AlN quantum dots

A. Helman, M. Tchernycheva, Kh. Moumanis, A. Lusson, F. H. Julien, F. Fossard, E. Monroy, B. Daudin, Le Si Dang, B. Damilano, N. Grandjean
Phys. Stat. Sol. (c), 1, Issue 6, 1456-1460, (2004)

⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies
J. Appl. Phys., 96, 180, (2004)
Abstract online (HAL) : click here...

⋄ Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors

M. Mosca, J.L. Reverchon, F. Omnès, J.Y. Duboz
J. Appl. Phys., 95, 4367, (2004)

⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69, 125329, (2004)

⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature

F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie
Mater. Res. Soc. Symp. Proc., 798, 613-18, (2004)

⋄ Internal photoemission in solar blind AlGaN Schottky barrier photodiodes

J.Y. Duboz, N. Grandjean, F. Omnès, M. Mosca, J.L. Reverchon
Appl. Phys. Lett., 86, 063511, (2004)

⋄ Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects

C. Morhain, M. Teisseire-Doninelli, S. Vézian, C. Deparis, P. Lorenzini, F. Raymond, J. Guion, G. Neu
Phys. Stat. Sol. (b), 241 (3), 631, (2004)

⋄ Regular step formation on concave-shaped surfaces on 6H–SiC(0 0 0 1)

W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras and M. Hanbücken,
Surf. Sci., 550, 8, (2004)

⋄ Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano and N. Grandjean
J. Cryst. Growth, 262, Issues 1-4, 145-150, (2004)

⋄ From GaAs:N to oversaturated GaAsN : Analysis of the band-gap reduction

T. Talierco, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.A. Pinault, M. Laügt, and E. Tournié
Phys. Rev. B, 69, 073303, (2004)
Abstract online (HAL) : click here...

⋄ Electronic properties of deep defects in n-type GaN

P. Muret, Ch. Ulzhöfer, J. Pernot, Y. Cordier, F. Semond, Ch. Gacquière, D. Théron
Superlattice Microst, 36, 435-443, (2004)
Abstract online (HAL) : click here...

⋄ Optical and structural characterization of self-organized stacked GaN/AlN quantum dots

G. Salviati, F. Rossi, N. Armani, V. Grillo, O. Martinez, A. Vinattieri, B. Damilano, A. Matsuse, N. Grandjean
J. Phys.: Condens. Matter, 16(2), S115-26, (2004)

⋄ High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD

J.Y.Duboz, J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès,
Mater. Res. Soc. Symp. Proc., 798, 47-51, (2004)

⋄ Symmetry aspects of exciton–exciton interactions and biexciton transitions in wurtzite semiconductor structures

P. Tronc, Yu. E. Kitaev, V. P. Smirnov, M. Jacobson, G. Neu
Phys. Stat. Sol. (b), 241, 321, (2004)

⋄ Metal organic vapour phase epitaxy of GaN and lateral overgrowth

P. Gibart
Reports on Progress in Physics, 67(5), 667-715, (2004)

⋄ Origin of power fluctuations in GaN resonant-cavity light-emitting diodes

B. Roycroft, M. Akhter, P. Maaskant, B. Corbett, A. Shaw, L. Bradley, P. de Mierry, M.A. Poisson
Optics Express, 12, 736, (2004)

⋄ Electronic structure of wurtzite and zinc-blende AlN

P. Jonnard, N. Capron, F. Semond, J. Massies, E. Martinez-Guerrero, H. Mariette
Eur. Phys. J. B, 42, 351, (2004)
Abstract online (HAL) : click here...

⋄ Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation

P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, J. Massies
Phys. Rev. B, 69, 35307, (2004)
Abstract online (HAL) : click here...

⋄ 60-GHz high power performance In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMTs on GaAs

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte and D. Théron
IEEE Electron Device Letters, 24 N°12, 724–726, (2003)

⋄ Isoelecrtonic traps in heavily doped GaAs:(In,N)

R. Intartaglia, T. Talierco, P. Valvin, B. Gil, T. Bretagnon, P. Lefebvre, M.A. Pinault, E. Tournié
Phys. Rev. B, 68, 235202, (2003)

⋄ Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector

D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies
Jpn. J. Appl. Phys, 42, Part 2, No. 12B, L1509, (2003)

⋄ Atomic structure of pyramidal defects in Mg-doped GaN

P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart
Phys. Rev. B, 68, 235214, (2003)

⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Stat. Sol. (c), 0(7), 2666-2669, (2003)

⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation

T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Rev. B, 68, 205301, (2003)
Abstract online (HAL) : click here...

⋄ Indium surface segregation in AlSb and GaSb

C. Renard, X. Marcadet, J. Massies, I. Prévot, R. Bisaro, P. Galtier
J. Cryst. Growth, 259, 69, (2003)

⋄ Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, and J. Christen
J. Cryst. Growth, 258, 232, (2003)

⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys., 94, 6499, (2003)

⋄ Atomic structure determination of the Si-rich beta -SiC(001) 3*2 surface by grazing-incidence x-ray diffraction: a stress-driven reconstruction

M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, M. Noblet, S. Chiang, F. Semond
Phys. Rev. B, 68(16), 165321-1-8, (2003)

⋄ Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche
Appl. Phys. Lett., 83, 5139, (2003)

⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies
Phys. Rev. B, 68(15), 153313, (2003)
Abstract online (HAL) : click here...

⋄ Failure analysis of a cascade laser structure by electrostatic force microscopy

M. Azize, P. Girard, M. Teisseire, A. Baranov and A. Joullie
Journal of Vaccum Science Technology B, 21(5), 10.1116/1.1609478, (2003)
Abstract online (HAL) : click here...

⋄ Cubic SiC surface structure studied by X-ray diffraction

M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond, L. Di-Cioccio, T. Billion
Mat. Sci. For., 433-436, 571-4, (2003)

⋄ An X-ray and TEM study of inhomogeneous ordering in AlxGa1-xN layers grown by MOCVD

M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès
J. of Physics and Chemistry of Solids, 64, 1653-1656, (2003)

⋄ Origins of GaN(0001) Surface Reconstructions

S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
Surf. Sci., 541, 242, (2003)

⋄ Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction

H. Enriquez, M. D'angelo, V.Yu. Aristov, V. Derycke, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond
J. Vac. Sci. Technol. B, 21(4), 1881-5, (2003)

⋄ Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers

S. Kret, G. Maciejewski, P. Dluzewski, P. Ruterana, N. Grandjean, and B. Damilano
Materials Chemistry and Physics, 81, 273, (2003)

⋄ Annealing effects on the crystal structure of GaInNAs quantum wells with large in and N content grown by molecular beam epitaxy

A. Hierro, J.M. Ulloa, J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, A. Guzman, J.L. Sanchez-Rojas, E. Calleja
J. Appl. Phys., 94, 2319, (2003)

⋄ Carrier mobility versus carrier density in AlGaN/GaN quantum wells

J.L. Farvacque and Z. Bougrioua
Phys. Rev. B, 68, 035335, (2003)

⋄ UV metal semiconductor metal detectors

J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès, F. Semond, J.Y. Duboz, L. Hirsch
Proc. of NATO Conference, , , (2003)

⋄ Improved AlGaN/GaN High Electron Mobility Transistors using AlN interlayers

A. Jiménez, Z. Bougrioua, J. M. Tirado, A. F. Braña, E. Calleja, E. Muñoz, I. Moerman
Appl. Phys. Lett., 82, 4827, (2003)

⋄ Influence of high excitation on excitonic states in GaN/AlGaN quantum wells

D-K. Nelsion, M-A. Jacobson, N. Grandjean, J. Massies, P. Bigenwald, A. Kavokin
Proc. SPIE, 5023, , (2003)
Abstract online (HAL) : click here...

⋄ Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells

J.M. Chauveau, A. Trampert, K.H. Ploog, M.A. Pinault, E. Tournié
Appl. Phys. Lett., 82, 3451, (2003)
Abstract online (HAL) : click here...

⋄ Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

R. Aubry, J.C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.A. Diforte-Poisson, A. Romann, S.L. Delage
Eur. Phys. J. Appl. Phys., 22(2), 77-82, (2003)

⋄ Detailed interpretation of electron transport in n-GaN

C. Mavroidis, J. J. Harris, M. J. Kappers, C. J. Humphreys, Z. Bougrioua
J. Appl. Phys., 93, 9095, (2003)

⋄ Intraband spectroscopy of self-organized GaN/AlN quantum dots

A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang
Physica E, 17, 60, (2003)

⋄ In surface segregation in InGaN/GaN quantum wells

A. Dussaigne, B. Damilano, N. Grandjean, J. Massies
J. Cryst. Growth, 251, 471, (2003)

⋄ Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, K. Du, K.H. Ploog
J. Cryst. Growth, 251, 383, (2003)

⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells

A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Physica E, 17, 64, (2003)

⋄ AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density

R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 39 (7), 626-628, (2003)

⋄ Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers

J.M. Chauveau, Y. Cordier, H.J. Kim, D. Ferré, Y. Androussi and J. Di Persio
J. Cryst. Growth, 251, Issues 1-4, 112-117, (2003)

⋄ Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys

O. Pages, T. Tite, D. Bormann, E. Tournié, O. Maksimov, M.C. Tamargo
Appl. Phys. Lett., 82, 2808, (2003)
Abstract online (HAL) : click here...

⋄ Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Y. Cordier, P. Lorenzini, J.M. Chauveau, D. Ferré, Y. Androussi, J. Dipersio, D. Vignaud, J.L.Codron
J. Cryst. Growth, 251, Issues 1-4, 822-826, (2003)
Abstract online (HAL) : click here...

⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth, 251, Issues 1-4, 811-815, (2003)
Abstract online (HAL) : click here...

⋄ Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies
J. Appl. Phys., 93(9), 5222-5226, (2003)

⋄ Photoluminescence spectroscopie of Ga(In)NAs quantum wells for emission at 1.5 µm

M.A Pinault, E. Tournié
Solid State Electronics, 47, 477, (2003)

⋄ LO phonon–plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys

T. Tite, O. Pages, M. Ajjoun, J.P. Laurenti, D. Bormann, E. Tournié, O. Maksimov, M.C. Tamargo
Solid State Electronics, 47, 455, (2003)

⋄ Evidence of an impurity band at an n-GaN/sapphire interface

C. Mavroidis, J.J. Harris, R.B. Jackman, Z. Bougrioua, I. Moerman
Diamond and Related Materials, 12, issues 3-7, 1127–1132, (2003)

⋄ Power Results at 4GHz of AlGaN/GaN HEMTs on High Resistive Silicon (111) substrate

N. Vellas, C. Gaquière, A. Minko, V. Hoël, J.C. De Jaeger, Y. Cordier, and F. Semond
IEEE Microwave and Wireless Components Letters, 13, n°3, 99-101, (2003)
Abstract online (HAL) : click here...

⋄ Ordering in undoped hexagonal AlxGa1-xN grown on sapphire (0001) with 0.09 < x < 0.247

M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès
Phys. Stat. Sol. (b), 236 No 3, 729-739, (2003)

⋄ GaN based UV photodetectors

F. Omnès, E. Monroy
Nitride Semiconductors, Handbook on Materials and Devices, 13, , (2003)

⋄ Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy

J.M. Chauveau, Y. Androussi, A. Lefebvre, J. Di Persio, and Y. Cordier
J. Appl. Phys., 93, Issue 7, 4219-4225, (2003)

⋄ GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 mm

E. Tournié, M.A. Pinault, M. Laügt, J.M. Chauveau, A. Trampert, K.H. Ploog
Appl. Phys. Lett., 82, 1845, (2003)

⋄ Wide-bandgap semiconductor ultraviolet detectors

E. Monroy, F. Omnès, F. Calle
Semicond. Sci. Tech., 18, R33, (2003)
Abstract online (HAL) : click here...

⋄ Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm

K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, J. Massies
Appl. Phys. Lett., 82, 868, (2003)

⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont
Appl. Phys. Lett., 82(9), 1386, (2003)
Abstract online (HAL) : click here...

⋄ RBS studies of AlGaN/AlN Bragg reflectors

L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie
Phys. Stat. Sol. (a), 195, No.3, 502-507, (2003)

⋄ Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities

N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies
Phys. Stat. Sol. (a), 195, No.3, 543-550, (2003)

⋄ High Pressure Study of the Electrical Transport Phenomena in AlGaN/GaN Heterostructures

Ch. Consejo, L. Konczewicz, S. Contreras, S. Lepkowsky, M. Zielinski, J.L. Robert, P. Lorenzini, Y. Cordier
Phys. Stat. Sol. (b), 235 (2), 232-237, (2003)
Abstract online (HAL) : click here...

⋄ Wide-bandgap semiconductor ultraviolet photodetectors (Topical review)

E. Monroy, F. Omnès, F. Calle
Semicond. Sci. Tech., 18, R33-R51, (2003)

⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems

A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Mater. Res. Soc. Symp. Proc., 743, L5.5, (2003)

⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon

J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy
Jpn. J. Appl. Phys, 42, 118, (2003)

⋄ Les nitrures d’éléments III

M. Leroux
Matériaux pour l’Optoélectronique, , , (2003)

⋄ Engineering of an Insulating Buffer and Use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, E.T. Palacios, F. Calle, M. Leroux
Phys. Stat. Sol. (a), 195, No. 1, 93, (2003)

⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters

D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies
Conference on Lasers and Electro-Optics Europe, 03TH8666, 178, (2003)

⋄ Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments

A. Reale, G. Massari, A. Di-Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, J. Massies
J. Appl. Phys., 93(1), 400-9, (2003)

⋄ Photodétecteurs pour l'ultraviolet

F. Omnès, E. Monroy
Détecteurs optoélectroniques, 6, 171-204, (2003)

⋄ Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots

A. Helman, K. Moumanis, M. Tchernycheva, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, F. Fossard, D. Le Si Dang, and B. Daudin
Mater. Res. Soc. Symp. Proc., 7, 169, (2003)

⋄ High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano
Appl. Phys. Lett., 82, 499, (2003)

⋄ Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire

J.L. Bubendorff, N. Grandjean, B. Damilano, M. Troyon
J. Cryst. Growth, 247, 284, (2003)

⋄ Incorporation of Dielectric Layers into the Processing of III-Nitride Based Heterostructure Field Effect Transistors

D. Mistele, T. Rotter, A. Horn, O. Katz, Z. Bougrioua, J. Aderhold, J. Graul, G. Bhir and J. Salzman
J. Electron. Mat., 32, 5, 355, (2003)

⋄ Indium distribution inside quantum wells: The effect of growth interruption in MBE

A.M. Sanchez, P. Ruterana, S. Kret, P. Dluzewski, G. Maciejewski, N. Grandjean, B. Damilano
Mater. Res. Soc. Symp. Proc., 743, L5.6, (2003)

⋄ Solar blind AlGaN Metal-Semiconducteur-Metal Devices for High Performance Flame Detection

M. Mosca, J.L. Reverchon, N. Grandjean, F. Omnès, J.Y. Duboz, I. Ribet, M. Tauvy
Mater. Res. Soc. Symp. Proc., 764, C4-4-1, (2003)

⋄ Influence of surface treatments on DC performance of GaN-based HFETs

T.D. Mistele, T. Rotter, Z. Bougrioua, M. Marso, H. Roll, H. Klausing, F. Fedler, O.K. Semchinova, J. Aderhold, I. Moerman, J. Graul
Phys. Stat. Sol. (a), 194 N°2, 452, (2002)

⋄ Relation between microstructure and 2DEG properties in AlGaN/GaN structures

B. Van Daele, G. Van Tendeloo, M. Germain, M. Leys, Z. Bougrioua, I. Moerman
Phys. Stat. Sol. (b), 234 N°3, 830, (2002)

⋄ Vibrational evidence for percolative effect in Zn1-xBexSe/GaAs

O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (b), 229, 25, (2002)

⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon

M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart
Phys. Stat. Sol. (b), 234, 887, (2002)

⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a), N°1, 61, (2002)
Abstract online (HAL) : click here...

⋄ Residual donors in wurtzite GaN homoepitaxial layers and heterostructures

G. Neu, M. Teisseire-Doninelli, C. Morhain, F. Semond, N. Grandjean, B. Beaumont, E. Frayssinet, W. Knap, A. M. Witowski, M. L. Sadowski, M. Leszczynski, P. Prystawko
Phys. Stat. Sol. (b), 235, 20, (2002)

⋄ Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, E. San Andres
Phys. Stat. Sol. (a), 188, 307, (2002)

⋄ Silicon effect on GaN surface morphology

Z. Benzarti, I. Halidou, O. Tottereau, T. Boufaden, B. El Jani
Microelectronics Journal, 33(11), 995-998, (2002)

⋄ Free carrier mobility in AlGaN/GaN quantum wells

J.L. Farvacque, Z. Bougrioua, F. Carosella, I. Moerman
J. Phys.: Condens. Matter, 14, 13319, (2002)

⋄ 200 Mbit/s Data Transmission through 100 Meters of Plastic Optical Fibre with Nitride LEDs

M. Akhter, P. Maaskant, B. Roycroft, B. Corbett, P. de Mierry, B. Beaumont, and K. Panzer
Electron. Lett., 38, 1457, (2002)

⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111)

F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie
Jpn. J. Appl. Phys, 41(10B), L1140-2, (2002)
Abstract online (HAL) : click here...

⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation

J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 92, 5602, (2002)

⋄ Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN

H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart
Appl. Phys. Lett., 75, 2587, (2002)

⋄ High linearity performances of GaN HEMT devices on silicon substrate at GHz

N. Vellas, C. Caquiere, Y. Guhel, M. Werquin, F. Bue, R. Aubry, S. Delage, F. Semond, J.C. De Jaeger
IEEE Electron Device Letters, 23(8), 461, (2002)

⋄ High responsivity submicron metal-semiconductor-metal ultraviolet detectors

T. Palacios, E. Monroy, F. Calle, F. Omnès
Appl. Phys. Lett., 81, 3198, (2002)

⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN

M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart
Phys. Stat. Sol. (a), 192, 394, (2002)

⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes

S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies
Phys. Stat. Sol. (a), 192(1), 139-143, (2002)

⋄ Vertical cavity InGaN LEDs grown by MOVPE

P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart
Phys. Stat. Sol. (a), 192, 335, (2002)

⋄ High power AlGaN/GaN HEMTs on resistive silicon substrate

V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 38, 750, (2002)
Abstract online (HAL) : click here...

⋄ Impact of the defects on the electrical and optical properties of AlGaN ultraviolet detectors

M. Hanzaz, A. Bouhdada, P. Gibart, F. Omnès
J. Appl. Phys., 92(1), 13, (2002)

⋄ Atomic force microscopy study of the polymer growth in a polymer stabilized liquid crystal

H. Guillard, P. Sixou, O. Tottereau
Polym. Adv. Technol., 13, 491, (2002)

⋄ Observation of magnetophotoluminescence from aGaN/Al/subx/Ga/sub1-x/N heterosjunction

P.A. Shields, R.J. Nicholas, K. Takashina, N. Grandjean, J. Massies
Phys. Rev. B, 65, 195320, (2002)

⋄ In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes

K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B. Damilano, J. Massies
Mat. Sci. Eng. B, 93, 150, (2002)

⋄ Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures

A. Jimenez, E. Calleja, E. Muñoz, M. Varela, C. Ballesteros, U. Jahn, K. Ploog, F. Omnès, P.Gibart
Mat. Sci. Eng. B, 93, 64, (2002)

⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN

P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart
Mat. Sci. Eng. B, 93, 224, (2002)

⋄ Assessment of GaN metal-semiconductor-metal for high-energy ultraviolet photodetection

E. Monroy, T. Palacios, O. Hainaut, F. Omnès, F. Calle, J.F. Hochedez
Appl. Phys. Lett., 80, 1902, (2002)

⋄ Photoluminescence of GaN microcrystallites prepared by a new solvothermal process

C. Collado, G. Goglio, G. Demazeau, A.S. Barriere, L. Hirsch, M. Leroux
Mat. Res. Bull., 37, 841, (2002)
Abstract online (HAL) : click here...

⋄ Full Si wafer conversion into bulk 3C-SiC

A. Leycuras, O. Tottereau, P. Vicente, L. Falkovsky, P. Girard, J. Camassel
Mat. Sci. For., 389-393, 147, (2002)
Abstract online (HAL) : click here...

⋄ Fmax of 490 GHz metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate

S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, A. Cappy
Electron. Lett., 38 N°8, 389, (2002)
Abstract online (HAL) : click here...

⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector

L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 91, 6095, (2002)

⋄ Recent progress of the BOLD investigation towards UV detectors for the ESA Solar Orbiter

J.F. Hochedez, J. Alvarez, F.D. Auret, P. Bergonzo, M.C. Castex, A. Deneuville, J.M. Defise, B. Fleck, P. Gibart, S.A. Goodman, O. Hainaut, J.P. Kleider, P. Lemaire, J. Manca, E. Monroy, E. Muñoz, P. Muret, M. Nesladek, F. Omnès, E. Pace, J.L. Pau, V. Ral
Diamond and Related Materials, 11, 427, (2002)

⋄ Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells

A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190, 87, (2002)

⋄ Exciton oscillator strength in GaN/AlGaN quantum wells

M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Stat. Sol. (a), 190, 129, (2002)

⋄ Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells

J. Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190, 135, (2002)

⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes

S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (a), 190, 149, (2002)

⋄ The GaN yellow luminescence center observed using optoelectronic modulation spectroscopy

C.H. Chiu, F. Omnès, C. Caquiere, P. Gibart, J.G. Swanson
Journ. of Physics D, 35, 609, (2002)

⋄ Modelling and spectroscopy of GaN microcavities

N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 190, 187, (2002)

⋄ Structure and morphology of concave-shaped surfaces on 6H-SiC(0001) after H2 etching

F. Dulot, L. Mansour, A. Leycuras, W. Wulfhekel, D. Sander, F. Arnaud D'avitaya, M. Hanbucken
Applied Surface Science, 187, 219, (2002)

⋄ Properties of a hole trap in n-type hexagonal GaN

P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
J. Appl. Phys., 91(5), 2998, (2002)

⋄ Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

W. Knap, E. Borovitskaya, M.S. Shur, L. Hsu, W. Walukiewicz, E. Frayssinet, P. Lorenzini, N. Grandjean, C. Skierbiszewsk, P. Prystawko, M. Leszczynski, I. Grzegory
Appl. Phys. Lett., 80, 1228, (2002)

⋄ Raman scattering in GaN pillar arrays

F. Demangeot, J. Gleize, J. Frandon, M.A. Renucci, M. Kuball, D. Peyrade, L. Manin-Ferlazzo, Y. Chen, N. Grandjean
J. Appl. Phys., 91, 2866, (2002)

⋄ Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001)

D. Sander, W. Wulfhekel, M. Hanbucken, S. Nitsche, J.P. Palmari, F. Dulot, F.A. D'avitaya, A. Leycuras
Appl. Phys. Lett., 81 (19), 3570-3572, (2002)

⋄ 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire

F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie
Phys. Stat. Sol. (b), 229, 931, (2002)

⋄ In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle
Appl. Phys. Lett., 80, 174, (2002)

⋄ Displaced substitutional phosphorus acceptors in zinc selenide

D. Wolverson, J.J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, H. Heinke, K. Ohkawa, D. Hommel, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (b), 229, 257, (2002)

⋄ Vibrational evidence for percolative effect in ZnBeSe

O. Pages, M. Aijoun, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Phys. Rev. B, 65, 035213, (2002)

⋄ Self compensation of the phosphorus acceptor in ZnSe

D. Seghier, H. Gislasson, C. Morhain, M. Teisseire, E. Tournié, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b), 229, 251, (2002)

⋄ Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers

C. Morhain, M. Teisseire, S. Vézian, F. Vigué, F. Raymond, P. Lorenzini, J. Guion, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b), 229, 881, (2002)

⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, S. Delage
Electron. Lett., 38(2), 91, (2002)

⋄ Evidence for alloy formation in dilute GaAs:N compounds

E. Tournié, G. Neu, M. Teisseire, M.A. Pinault, M. Laügt
Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171, 27, (2002)

⋄ Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells

J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190, 155, (2002)

⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes

S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies
Appl. Phys. Lett., 80, 428, (2002)
Abstract online (HAL) : click here...

⋄ AlGaN/GaN HEMTS: material, processing, and characterization

F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdu, Z. Bougrioua, I. Moerman
J Mater Sci, 14, n° 5/7, 271–277, (2002)

⋄ Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures

I. Prevot, B. Vinter, X. Marcadet, J. Massies
Appl. Phys. Lett., 81, 3362, (2002)

⋄ Interplay between Ga-N and Al-N sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy

A.L. Alvarez, F. Calle, E. Monroy, J.L.Pau, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, F. Omnès, P. Gibart, P.R. Hageman
J. Appl. Phys., 92(1), 223, (2002)

⋄ Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J.J. Harris, R.B. Jackman, I. Harrison, N.J. Ansell, Z. Bougrioua, I. Moerman
J. Appl. Phys., 91, 9835, (2002)

⋄ Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation

S.P. Lepkowski, T. Suski, P. Perlin, V.Yu. Ivanov, M. Godlewski, N. Grandjean, J. Massies
J. Appl. Phys., 91, 9622, (2002)

⋄ Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N

E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdu, F.J. Sanchez, M.T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua, I. Moerman
Semicond. Sci. Tech., 17,N°9, L47, (2002)

⋄ Hypersonic characterization of sound propagation velocity in AlxGa1-xN thin films

R.J. Jimenez Rioboo, E. Rodriguez-Canas, M. Vila, C. Prieto, F. Calle, T. Palacios, M.A. Sanchez, F. Omnès, O. Ambacher, B. Assouar, E. Elmazria
J. Appl. Phys., 92(11), 6869, (2002)

⋄ Sub-micron technology in group-III nitrides : application to electronic devices

T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, F. Omnès, Z.Bougrioua, E. Muñoz
Proc. 11th Europ.Heterostructure Technology Work., , , (2002)

⋄ On the effect of high Mg doping on the polarity of GaN

P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean
Institute of Physics Conferences Series, n°169, 307, (2002)

⋄ Technology and performance of submicron metal-semiconductor-metal GaN ultraviolet detectors

T. Palacios, E. Monroy, F. Calle, F. Omnès
Proc. of the IEEE Device Research Conf., , 141, (2002)

⋄ Growth of gallium nitride epitaxial layers by metal organics vapour phase epitaxy and applications

B. Beaumont, F. Omnès, P. De Mierry, P. Gibart
Vide Science, Technique et Applications, 3-4, 553, (2002)

⋄ AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments

D. Mistele, T. Rotter, Z. Bougrioua, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul
Mater. Res. Soc. Symp. Proc., 693, I6.51.1, (2002)

⋄ Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers

C. Mavroidis, J.J. Harris, K. Lee, I. Harrison, B.J. Ansell, Z. Bougrioua, I. Moerman
Phys. Stat. Sol. (b), 228, 579, (2001)

⋄ Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe

J.J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel,E. Tournié, J.P. Faurie
Phys. Rev. B, 64, 205-206, 1, (2001)

⋄ Nuclear microprobe analysis of GaN bases light emitting diodes

L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz
Phys. Stat. Sol. (a), 188, 171, (2001)
Abstract online (HAL) : click here...

⋄ Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, and E. Doghèche
Phys. Stat. Sol. (a), 188, 537, (2001)
Abstract online (HAL) : click here...

⋄ Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields

D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 851, (2001)

⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect

P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (b), 228, 65, (2001)

⋄ Reliability of Schottky contacts on AlGaN

E. Monroy, F. Calle, T. Palacios, J. Sanchez-Osorio, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, P. Ruterana
Phys. Stat. Sol. (a), 188, 367, (2001)

⋄ Minority Carrier Diffusion Lengths in silicon doped gallium nitride thin films measured by electron beam induced current

C. Grazzi, M. Albrecht, H.P. Strunk, Z. Bougrioua, I. Moerman
Solid State Phenomena, 82-84, 807, (2001)

⋄ Large built-in electric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells

P. Perlin, T. Suski, S.P. Lepkowski, H. Teisseyre, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 839, (2001)

⋄ Donor spectroscopy in wurtzite GaN heterostructures

G. Neu, M. Teisseire-Doninelli, C. Morhain
Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171, 19, (2001)

⋄ MBE-grown high-quality (Al,Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs

S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Semicond. Sci. Tech., 16, 913, (2001)

⋄ Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultra-violet photodetection

F. Vigué, E. Tournié, J.P. Faurie
IEEE J. Quant. Electr., 37(9), 1146, (2001)

⋄ High quality distributed Bragg refelctors based on AlxGa1-xN/GaN multilayers grown by MBE

S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Appl. Phys. Lett., 79, 2136, (2001)

⋄ Deuterium diffusion in Mg-doped GaN layers grown by MOVPE

P. Theys, Z. Teukam, F. Jomard, P. De Mierry, A.Y. Polyakov, M. Barbe
Semicond. Sci. Tech., 16, L53, (2001)

⋄ Free-carrier effects in gallium n itride epilayers : valence-band dispersion

P.A. Shields, R.J. Nicholas, F.M. Peeters, B. Beaumont, P. Gibart
Phys. Rev. B, 64, 081203, (2001)

⋄ Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures

P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Phys. Rev. B, 64, 115319, (2001)

⋄ Guided elastic waves in GaN on sapphire

S. Camou, Th. Pastureaud, H.P.D. Schenk, S. Ballandras, and V. Laude
Electron. Lett., 37, 1053, (2001)
Abstract online (HAL) : click here...

⋄ Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates

F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie
Appl. Phys. Lett., 79, 194, (2001)

⋄ Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, S. Dalmasso, P. De Mierry, B. Beaumont, H. Lahrèche, A. Bouille, P. Gibart
Jpn. J. Appl. Phys, 40, L738, (2001)

⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties

B. Damilano, N. Grandjean, S. Vézian, J. Massies
J. Cryst. Growth, 227/228, 466, (2001)

⋄ Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
Mat. Sci. Eng. B, 82, 91, (2001)

⋄ Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots

P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 224, 53, (2001)

⋄ Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : spectroscopic characterization and dislocation contrasts

S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart
J. Appl. Phys., 89, 3736, (2001)

⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78, 1538, (2001)
Abstract online (HAL) : click here...

⋄ Dielectric microcavity in GaN/Si

J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean
Phys. Stat. Sol. (a), 183, 35, (2001)

⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields

M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183, 61, (2001)

⋄ Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111)

F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 183, 163, (2001)

⋄ Molecular beam epitaxy of group-III nitrides on silicon substrates : growth, properties and devices applications

F. Semond, Y. Cordier, N. Grandjean et al.
Phys. Stat. Sol. (a), 188 (2), 501-510, (2001)

⋄ Inelastic light scattering by phonons in hexagonal GaN-AlN nanostructures

J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Daudin, N. Grandjean
Phys. Stat. Sol. (a), 183, 157, (2001)

⋄ 2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE

Z. Bougrioua, J.L. Farvaque, I. Moerman, F. Carosella
Phys. Stat. Sol. (b), 228, 625, (2001)

⋄ Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy

L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183, 139, (2001)

⋄ Zn(MgBe)Se ultraviolet photodetectors

F. Vigué, J.P. Faurie
J. Electron. Mat., 30, 662, (2001)

⋄ Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

G. Neu, M. Teisseire, P. Lemasson, H. Lahrèche, N. Grandjean, F. Semond, B. Beaumont, I. Grzegory, S. Porowski, R. Triboulet
Physica B, 302-303, 39, (2001)

⋄ Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells

D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183, 129, (2001)

⋄ Silicon nitride passivation effects on GaN MESFET

C. Gaquiere, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, J.C. De Jaeger, F. Omnès
Proc. WOCSDICE, , VIII-11, (2001)

⋄ Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie
J. Appl. Phys., 90, 5115, (2001)

⋄ Raman study of ZnxBe1-xSe solid solutions

O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, O. Gorochov, C. Chauvet, E. Tournié, J.P. Faurie
Optical Matérials, 17(1-2), 323, (2001)

⋄ (Al,Ga)N ultraviolet detectors on sapphire and Si substrates

E. Muñoz, E. Monroy, J.L. Pau, F. Calle, M.A. Sanchez, E. Calleja, F. Omnès, B. Beaumont, P. Gibart
Proc. WOCSDICE, , XV-5, (2001)

⋄ CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia

T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Sol. Stat. Comm., 117, 445, (2001)
Abstract online (HAL) : click here...

⋄ Group-III nitride quantum heterostructures grown by molecular beam epitaxy

N. Grandjean, B. Damilano, J. Massies
J. Phys.: Condens. Matter, 13, 6945, (2001)

⋄ Growth of GaN on (111) Si : a route towards self-supported GaN

H. Lahrèche, G. Nataf, E. Feltin, B. Beaumont, P. Gibart
J. Cryst. Growth, 231, 329, (2001)

⋄ Influence of alloy stability on the photoluminescence properties of GaAs//GaAs quantum wells grown by molecular-beam epitaxy

M.A. Pinault, E. Tournié
Appl. Phys. Lett., 79, 3404, (2001)

⋄ From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization

M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies
Mat. Sci. For., 353-356, 795, (2001)

⋄ Surface morphology of GaN grown by molecular beam epitaxy

S. Vézian, J. Massies, F. Semond, N. Grandjean
Mat. Sci. Eng. B, 82, 56, (2001)

⋄ Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers

H.P.D. Schenk, M. Leroux, P. De Mierry, M. Laügt, F. Omnès, and P. Gibart
Mat. Sci. Eng. B, 82, 163, (2001)

⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible spectrum

B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 224, (2001)

⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE

S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Mat. Sci. Eng. B, 82, 256, (2001)

⋄ On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells

M.A. Pinault, E. Tournié
Appl. Phys. Lett., 78(11), 1562, (2001)

⋄ Epitaxial Lateral Overgrowth of GaN on Silicon (111)

E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart
Phys. Stat. Sol. (a), 188, 733, (2001)

⋄ Stress control in GaN grown on silicon(111) by MOPVE

E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart
Appl. Phys. Lett., 79, 3220, (2001)

⋄ Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells

B. Damilano, N. Grandjean, C. Pernot, J. Massies
Jpn. J. Appl. Phys, 40, L918, (2001)

⋄ GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxy

N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Semicond. Sci. Tech., 16, 358, (2001)

⋄ Epitaxial Lateral overgrowth of GaN

B. Beaumont, P. Vennéguès, P. Gibart
Phys. Stat. Sol. (b), 227, 1-43, (2001)

⋄ Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

F. Vigué, E. Tournié, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz
Appl. Phys. Lett., 78(11), 4190, (2001)

⋄ Crack-free thick GaN layers on silicon(111) by MOVPE

E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart
Phys. Stat. Sol. (a), 188, 531, (2001)

⋄ Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE

H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle
Phys. Stat. Sol. (a), 188, 899, (2001)

⋄ Donor and donor bound-exciton spectroscopy in wurtzite GaN heterostructures

M. Teisseire, G. Neu, C. Morhain
Phys. Stat. Sol. (b), 228, 501, (2001)

⋄ Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices

F. Semond, H.P.D. Schenk, P. Gibart, S. Camou, T. Pastureaud, A. Soufyane, and S. Ballandras
Ann. Chim. Sci. Mater., 26, 177, (2001)

⋄ Wide band-gap ZnMgBeSe alloys grown onto GaAs by molecular-beam epitaxy

E. Tournié, F. Vigué, M. Laügt, J.P. Faurie
J. Cryst. Growth, 223, 461, (2001)

⋄ Potentialities of GaN-based microcanivities grown on silicon substrates

N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 188, 519, (2001)

⋄ Magneto-photoluminescence spectroscopy of GaN/AlGaN quantum wells : valence band reordering and excitonic binding energies

P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
Phys. Rev. B, 63, 245319, (2001)

⋄ Impact ionization of excitons in an electric field in GaN

D. Nelson, B. Gil, M.A. Jacobson, V.D. Kagan, N. Grandjean, B. Beaumont, J. Massies, P. Gibart
J. Phys.: Condens. Matter, 13, 7043, (2001)

⋄ III nitrides and UV detection

E. Muñoz, E. Monroy, J.L. Pau, F. Calle, F. Omnès, P. Gibart
J. Phys.: Condens. Matter, 13(32), 7115, (2001)

⋄ Magneto-photoluminescence of AlGaN/GaN quantum wells

P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
J. Cryst. Growth, 230 (3-4), 487, (2001)

⋄ Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy

P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Microscopy, 202, 212, (2001)

⋄ Extremely sharp dependence of the exciton oscillator strength on quantum well width in the GaN/AlxGa1-xN system : the polarization field effect

M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Rev. B, 64, 121304, (2001)

⋄ Excitonic properties of ZnS quantum wells

B. Urbaszek, C.M. Townsley, X. Tang, C. Morhain, A. Balocchi, K.A. Prior, R.J. Nicholas, B.C. Cavenett
Phys. Rev. B, 64(15), 155321, (2001)

⋄ AlGaN-based UV photodetectors

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
J. Cryst. Growth, 230 (3-4), 537, (2001)

⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si

J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 325, (2001)

⋄ Micro-Raman study of wurtzite AlN layers grown on Si(111)

J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, F. Semond, J. Massies
Phys. Stat. Sol. (a), 188, 511, (2001)

⋄ Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes

M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 228, 129, (2001)

⋄ Phonon-assisted optical transitions in GaN with impurities and defects

P. Tronc, Yu. E. Kitaev, G. Wang, M.F. Limonov, G. Neu
Physica B, 302-303, 291, (2001)

⋄ Raman mapping of epitaxial lateral overgrown GaN : stress at the coalescence boundary

M. Kuball, M. Benyoucef, B. Beaumont, P. Gibart
J. Appl. Phys., 90, 3656, (2001)

⋄ Heterostructure field effect transistor types with novel gate dielectrics

D. Mistele, T. Rotter, Z. Bougrioua, K.S. Rover, F. Fedler, H. Klausing, J. Stemmer, O.K. Semchinova, J. Aderhold, J. Graul
Phys. Stat. Sol. (a), 188, N°1, 225, (2001)

⋄ Core structure of dislocations in GaN revealed by transmission electron microscopy

T. Remmele, M. Albrecht, H.P. Strunk, A.T. Blumenau, M.I. Heggie, J. Elsner. T. Frauenheim, H.P.D. Schenk, and P. Gibart
Proc. Royal Microsc. Soc. Conf., , 323-326, (2001)

⋄ High quality p+-n+ GaAs tunnel junction diode grown by atmospheric pressure MOVPE

L. Beji, B. El Jani, P. Gibart
Phys. Stat. Sol. (a), 183, 273, (2001)

⋄ High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy

F. Semond, P. Lorenzini, N. Grandjean, J. Massies
Appl. Phys. Lett., 82, 335, (2001)

⋄ Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure

A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux
Phys. Rev. B, 89, 3775, (2001)

⋄ Strain state in GaN epilayers from optical experiments

E. Deleporte, C. Guenaud, M. Voos, B. Beaumont, P. Gibart
J. Appl. Phys., 89, 1116, (2001)

⋄ High temperature nitride sources for plastic optical fibre data buses

B. Corbett, P.P. Maaskant, M. Akhter, J.D. Lambkin, P. Gibart, P. De Mierry, H.P.D. Schenk, B. Beaumont, M.A. Poisson, N. Proust, E. Calleja, M.A. Sánchez-García, F. Calle, T. McCormack, E. O'Reilly, D. Lancefield, A. Crawford, M. Kamal, K. Panzer, H. Whi
Proc. Tenth Int’l Plastic Optic Fibres Conf., 10, 81-87, (2001)

⋄ Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : time evolution with low energy electron beam

S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart, J.D. Ganiere, K. Leifer
J. Appl. Phys., 89, 7966, (2001)

⋄ Application and performance of GaN based UV detectors

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
Phys. Stat. Sol. (a), 185(1), 91, (2001)

⋄ Optical properties of self-assembled InGaN/GaN quantum dots

T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 22, (2001)

⋄ Modeling of absorption and emission spectra of InGaN layers grown by MBE

L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies
Mat. Sci. Eng. B, 82, 71, (2001)

⋄ Photoconductance measurements and Stokes shift in InGaN alloys

J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 197, (2001)

⋄ Diamond UV detectors for future solar physics missions

J.F. Hochedez, P. Bergonzo, M.C. Castex, P. Dhez, O. Hainaut, M. Sacchi, J. Alvarez, H. Boyer, A. Deneuville, P. Gibart, B. Guizard, J.P. Kleider, P. Lemaire, C. Mer, E. Monroy, E. Muñoz, P. Muret, F. Omnès, J.L. Pau, V. Ralchenko, D. Tromson, E. Verwicht
Diamond and Related Materials, 10(3-7), 673, (2001)

⋄ New form of ordering in AlGaN

P. Ruterana, G. De Saint-Jores, F. Omnès
Mat. Sci. Eng. B, 82, 203, (2001)

⋄ Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition

P. Ruterana, G. De Saint Jores, M. Laügt, F. Omnès, E. Bellet-Amalric
Appl. Phys. Lett., 78(3), 344, (2001)

⋄ Piezoelectric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells

S. P. Lepkowski, T. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies
Appl. Phys. Lett., 79, 1483, (2001)

⋄ Characterization of electron-irradiated n-GaN

S.A. Goodman, F.D. Auret, M.J. Legodi, B. Beaumont, P. Gibart
Appl. Phys. Lett., 78(11), 1538, (2001)

⋄ In-situ etching at InGaAs/GaAs quantum well interfaces

E. Chirlias, J. Massies, J.L. Guyaux, H. Moisan, J.C. Garcia
J. Cryst. Growth, 222, 471, (2001)

⋄ Direct signature of strained GaN quantum dots by Raman scattering

J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 79, 686, (2001)

⋄ Quantum beats of free and bound excitons in GaN

K. Kyhm, R.A. Taylor, J.F. Ryan, T. Aoki, M. Kkuwata-Gonokami, B. Beaumont, P. Gibart
Appl. Phys. Lett., 79, 1097, (2001)

⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy

P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78, 1252, (2001)
Abstract online (HAL) : click here...

⋄ Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells

M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Mat. Sci. Eng. B, 82, 140, (2001)

⋄ Finite element analysis of epitaxial lateral overgrown GaN : voids at the coalescence boundary

M. Benyoucef, M. Kuball, G. Hill, M. Wisnom, B. Beaumont, P. Gibart
Appl. Phys. Lett., 79, 4127, (2001)

⋄ Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN

A. Bell, I. Harrison, D. Karakakis, E.C. Larkins, J.M. Hayes, M. Kuball, N. Grandjean, J. Massies
J. Appl. Phys., 89, 1070, (2001)

⋄ TEM study of crystal defects in ZnSe/GaAs(001) epilayers

S. Lavagne, C. Levade, G. Canderschaeve, J. Crestou, E. Tournié, J.P. Faurie
J. Phys.: Condens. Matter, 12(49), 10287, (2000)

⋄ Phase separation in MOVPE AlxGa1-xN films deposited on 6H-SiC

P. Vennéguès, H. Lahrèche
Appl. Phys. Lett., 77, 4310, (2000)

⋄ Native vacancies in N-doped and undoped ZnSe layers studied by positron annihilation

P. Desgardin, J. Oila, K. Saarinen, P. Hautojarvi, E. Tournié, J.P. Faurie, C. Corbel
Phys. Rev. B, 62, 15711, (2000)

⋄ Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers

E. Tournié, G. Neu, M. Teisseire, J.P. Faurie, H. Pelletier, B. Theys
Phys. Rev. B, 62(19), 12868, (2000)

⋄ Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN

P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart
Appl. Phys. Lett., 77, 880, (2000)

⋄ ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range

F. Vigué, A. Bouille, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (a), 181(1), 301, (2000)

⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells

M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 180, 127, (2000)

⋄ (Al,Ga)N Ultraviolet Photodetectors and Applications

E. Muñoz, E. Monroy, J.L. Pau, F. Calle, E. Calleja, F. Omnès, P. Gibart
Phys. Stat. Sol. (a), 180, 293, (2000)

⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures

M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald
Phys. Stat. Sol. (a), 178, 101, (2000)

⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht
J. Appl. Phys., 88, 183, (2000)
Abstract online (HAL) : click here...

⋄ Molecular beam epitaxy of ZnBeSe : influence of the substrate nature and epilayer properties

C. Chauvet, E. Tournié, P. Vennéguès, J.P. Faurie
Journal Electron. Mater., 29(6), 883, (2000)

⋄ Réalisation de structures photoniques avancées

D. Peyrade, F. Carcenac, L. Manin, V. Thierry-Mieg, N. Grandjean, D. Coquillat, R. Legros, Y. Chen
J. Phys. IV France, 10, 8-125, (2000)

⋄ Modeling of the spectral response of the AlxGa1-xN p-n junction photodetectors

M. Hanzaz, A. Bouhdada, E. Monroy, E. Muñoz, P. Gibart, F. Omnès
Eur. Phys. J. Appl. Phys., 11, 29, (2000)

⋄ Growth of CVD thin films and thick LPE 3C-SiC in a specially designed reactor

A. Leycuras
Mat. Sci. For., 338-342, 241, (2000)

⋄ High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO

H. Lahrèche, V. Bousquet, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart
Diamond and Related Materials, 9, 452, (2000)

⋄ High detectivity ZnSe-based Schottky barrier photodetectors for the blue and near-ultraviolet spectral range

F. Vigue, P. De Mierry, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz
Electron. Lett., 36, 826, (2000)

⋄ Nature of the bandgap of Zn1-xBexSe alloys

C. Chauvet, E. Tournié, J.P. Faurie
Phys. Rev. B, 61, 5332, (2000)

⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization

S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Thin Solid Films, 380, 195, (2000)

⋄ GaN and InGaN quantum dots grown by MBE : from UV to red light emission

N. Grandjean, B. Damilano, J. Massies
Proc. of Int. Workshop on Nitride Semiconductors, , 1002, (2000)

⋄ Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN

G. Neu, M. Teisseire, N. Grandjean, H. Lahrèche, B. Beaumont, I. Grzegory, S. Porowski, P. Tronc
Proc. Int. Conf. on the Physics of Semiconductors, , , (2000)

⋄ Luminescence and absorption in InGaN epitaxial layers and the Van Roosbroeck-Shockley relation

H.P.D. Schenk, M. Leroux, and P. De Mierry
J. Appl. Phys., 88, 1525, (2000)

⋄ AlxGa1-xN-based UV photodetectors and waveguides

F. Omnès, E. Monroy, B. Beaumont, E. Doghèche, F. Calle, E. Muñoz, P. Gibart
Proc. of Compound Semiconductor Power Transistors, 2000-1, 205, (2000)

⋄ GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range

B. Damilano, N. Grandjean, J. Massies, F. Semond
Applied Surface Science, 164, 241, (2000)

⋄ Green electroluminescent (Ga,InAl)N LEDs grown on Si(111)

S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux
Electron. Lett., 36(20), 1728, (2000)

⋄ AlGaN based structures on sapphire for visible blind Schottky barrier UV photodetectors : towards high performance device applications

F. Omnès, E. Monroy, B. Beaumont, F. Calle, E. Muñoz, P. Gibart
Proc. SPIE, 3948, 234, (2000)

⋄ ZnSe-based Schottky barrier photodetectors

F. Vigué, E. Tournié, J.P. Faurie
Electron. Lett., 36(25), 352, (2000)

⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau
Appl. Phys. Lett., 77, 2189, (2000)

⋄ Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

M. Benaïssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai
Appl. Phys. Lett., 77, 2115, (2000)

⋄ Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homo-epitayers

G. Neu, M. Teisseire, E. Frayssinet, W. Knap, M.L. Sadowski, A.M. Witowski, K. Pakula, M. Leszczynski, P. Prystawko
Appl. Phys. Lett., 77, 1348, (2000)

⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K

B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie
Appl. Phys. Lett., 77, 1268, (2000)

⋄ Growth of gallium nitride epitaxial layers and applications

B. Beaumont, P. Gibart, N. Grandjean, J. Massies
C.R. Acad. Sci. Paris, 1, série IV, 35, (2000)

⋄ Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

F. Vigué, E. Tournié, J.P. Faurie
Appl. Phys. Lett., 76, 242, (2000)

⋄ Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular- beam epitaxy

G. Neu, E. Tournié, C. Morhain, M. Teisseire, J.P. Faurie
Phys. Rev. B, 61, 15789, (2000)

⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)

S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès
Phys. Rev. B, 61, 7618, (2000)

⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy

B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie
Phys. Stat. Sol. (a), 180, 363, (2000)

⋄ ZnSe-based heterostructures for blue-green lasers

J.P. Faurie, E. Tournié
CR. Acad. Sci. Paris, 1, série IV, 23, (2000)

⋄ Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(001) and GaAs(001)

C. Chauvet, E. Tournié, J.P. Faurie
J. Cryst. Growth, 214/215, 95, (2000)

⋄ Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots

N. Grandjean, B. Damilano, J. Massies S. Dalmasso
Sol. Stat. Comm., 113, 495, (2000)

⋄ Reduction mechanims for defect densities in GaN using one or two-step epitaxial lateral overgrowth methods

P. Vennéguès, V. Bousquet, B. Beaumont, M. Vaille, P. Gibart
J. Appl. Phys., 87(12), 4175, (2000)

⋄ Hydrogen/deuterium : a probe to investigate carrier-compensation in ZnSe:N

E. Tournié, H. Pelletier, G. Neu, B. Theys, A. Lusson, M. Teisseire, C. Chauvet, J.P. Faurie
J. Cryst. Growth, 214/215, 507, (2000)

⋄ Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures

P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Mater. Res. Soc. Symp. Proc., 639, G9.8, (2000)

⋄ High electron mobility in AlGaN/GaN heterostructures grown on bulk substrates

E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, M.S. Asif Khan, M.S. Shur, R. Gaska, D. Maude
Appl. Phys. Lett., 77, 2551, (2000)

⋄ Comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN

B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahrèche, F. Omnès
J. Electron. Mat., 29, 603, (2000)

⋄ Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN

F.K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart, E. Calleja, E. Muñoz
J. Electron. Mat., 29, 1351, (2000)

⋄ Infrared studies on GaN single crystals and homoepitaxial layers

E. Frayssinet, W. Knap, P. Prystawko, M. Leszczynski, I.Grzegory, T. Suski, B. Beaumont, P. Gibart
J. Cryst. Growth, 218, 161, (2000)

⋄ Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements

A.F. Brana, A.F. Diaz-Paniagua, F. Batallan, J.A. Garrido, E. Muñoz, F. Omnès
J. Appl. Phys., 88(2), 932, (2000)

⋄ Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes

E. Monroy, F. Calle, J.L. Pau, F.J. Sanchez, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
J. Appl. Phys., 88(2), 2081, (2000)

⋄ Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures

L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies
Sol. Stat. Comm., 115, 575, (2000)

⋄ Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures

E. Boroviskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjean, B. Beaumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc., 639, G7.5, (2000)

⋄ Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart
J. Cryst. Growth, 217, 13, (2000)

⋄ Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron excitation

K.P. O'donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damilano, N. Grandjean
Mater. Res. Soc. Symp. Proc., 639, G9.11, (2000)

⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red

Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J.
Mater. Res. Soc. Symp. Proc., 639, G10.1.1-11, (2000)

⋄ AlGaN photodiodes for monitoring the solar UV radiation

E. Muñoz, E. Monroy, F. Calle, F. Omnès, P. Gibart
Journal of Geophysical Research, 105, 4865, (2000)

⋄ Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN

P. De Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, P. Gibart, F. Jomard, S. Rushworth, L. Smith, and R. Odedra
MRS Internet J. Nitride Semicond. Res., 5, 8, (2000)

⋄ AlN and GaN layers deposited on sapphire or silicon substrates: Theory and experiment

T. Pastureaud, A. Soufyane, S. Camou, S. Ballandras, H.P.D. Schenk, F. Semond, J. Desbois, and V. Laude
Proc. IEEE Ultrason. Symp., 1, 293-297, (2000)

⋄ Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy

H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart
J. Appl. Phys., 87, 577, (2000)

⋄ High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC and sapphire substrates

W. Knap, E. Borovitskaya, M.S. Shur, R. Gaska, G. Karczewski, B. Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J.W. Yang, X. Hu, G. Simin, M. Asif Khan, C.Skierbiszewski, P. Prystawko, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc., 639, G7.3, (2000)

⋄ Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Y. Xin, J.I. Arslan, S. Sivananthan, N.D. Browning, S.J. Pennycook, F. Omnès, B. Beaumont, J.P. Faurie, P. Gibart
Appl. Phys. Lett., 76, 466, (2000)

⋄ Photoluminescence of GaAs grown by metalorganic molecular beam epitaxy in space ultra-vacuum

A. Freundlich, C. Horton, M.F. Vilela, M. Sterling, A. Ignatiev, G. Neu, M. Teisseire
J. Cryst. Growth, 209, 435, (2000)

⋄ Study of the band alignment in (Zn,Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy

C. Guenaud, E. Deleporte, A. Filoramo, Ph. Lelong, C. Delalande, C. Morhain, E. Tournié, J.P. Faurie
J. Appl. Phys., 87, 1863, (2000)

⋄ Modeling of the spectral response of the AlxGa1-xN Schottky barrier ultraviolet photodetectors

A. Bouhdada, M. Hanzaz, P. Gibart, F. Omnès, E. Monroy, E. Muñoz
J. Appl. Phys., 87(12), 8286, (2000)

⋄ Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry

L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies,
Jpn. J. Appl. Phys, 39, 20, (2000)

⋄ Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures

J. Gleise, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, N. Grandjean, J. Massies
Thin Solid Films, 364, 156, (2000)

⋄ GaAs/GaAs twist-bonding for compliant substrates : interface structure and epitaxial growth

G. Patriarche, C. Meriadec, G. Le Roux, C. Deparis, I. Sagnes, J.C. Harmand, F. Glas
Applied Surface Science, 164, 15, (2000)

⋄ Low-noise metal-insulator-semiconductor UV photodiodes based on GaN

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès
Electron. Lett., 36(25), 2096, (2000)

⋄ Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation

A. Amokrane, S. Dassonneville, B. Sieber, J.L. Farvaque, B. Beaumont, V. Bousquet, P. Gibart, J.D. Ganiere, K. Leifer
J. Phys.: Condens. Matter, 12, 10271, (2000)

⋄ AlxGa1-xN based UV visible –blind photodetector applications

F. Omnès, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, P. Gibart
Opto-Electronics Review, 8(1), 43, (2000)

⋄ Optically detected magneto resonance mapping on the yellow luminescence in GaN

K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart
Appl. Phys. Lett., 76, 1828, (2000)

⋄ GaN-AlGaN heterojunction field-effect-transistors over bulk GaN substrates

M.Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, G. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu
Appl. Phys. Lett., 76, 3807, (2000)

⋄ Surface kinetics of GaN evaporation and growth by molecular beam epitaxy

S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano
Surf. Sci., 450, 191, (2000)

⋄ A Raman study of ZnxBe1-xSe alloy (100) epitaxial layers

O. Pages, M. Ajjouin, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Appl. Phys. Lett., 77, 519, (2000)

⋄ Signature of GaN-AlN quantum dots by nonresonant Raman scattering

J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 77, 2174, (2000)

⋄ Time response analysis of ZnSe-based Schottky barrier photodetectors

E. Monroy, F. Vigue, F. Calle, E. Muñoz and J.P. Faurie,
Appl. Phys. Lett., 77, 2761, (2000)

⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots

A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 180, 375, (2000)