The Research Center for Heteroepitaxy and its Applications (CRHEA - UPR10) is a CNRS research laboratory specialized in the epitaxy of wide bandgap semiconductor materials such as III nitride materials (GaN, AlN), zinc oxide (ZnO), silicon carbide (SiC) and their micro- and nanofabrication in a clean room. CRHEA also studies 2D materials such as graphene, or boron nitride.
The main areas covered by the CRHEA concern the energy transition, the communications of the future, the environment and health. CRHEA also conducts fundamental studies in nanoscience and crystal growth.
High energy bandgap materials are key elements for power electronics, ultra-high frequency electronics, LED-based lighting and new generations of micro-displays. CRHEA visible and ultraviolet light sources have multiple applications for lighting, biophotonics and water purification. CRHEA also develops components in the THz domain, photonic circuits, advanced optical components based on metasurfaces, applications in spintronics, sensors and is involved in the development of quantum technologies.
The laboratory has eight molecular beam epitaxy growth reactors and six vapor phase growth reactors. It also has tools for structural characterization of materials and a clean room for micro and nanofabrication.
CRHEA was behind the creation of two spin-offs (Saint Gobain Lumilog and EasyGaN). It hosts several SMEs (NovaSiC and EasyGaN) that benefit from its scientific environment and its technical facilities and collaborate with the laboratory.
CRHEA is a CNRS owned research unit attached mainly to the Institute of Physics and secondarily to the Institute of Engineering Sciences and Systems. The CNRS is a member of the Université Côte d’Azur. The premises of CRHEA are located in the heart of the Sophia-Antipolis technopole in Valbonne, a short distance from Cannes and Nice.