Semiconductors are used in many electronic devices, whether for telecommunications, power management or sensors operating in various environments. In this context, the ELECTRO team develops epitaxy of III-Nitrides, Zinc and Magnesium Oxides, Silicon Carbide and 2D Materials such as Graphene. The team hosts the SiC epitaxy activity of NOVASiC and works on the development of the molecular beam epitaxy of III-Nitrides with RIBER since the creation of PTC-GaN common laboratory in 2003.

Main avec index Contact ?