The epitaxial cluster brings together the various growth activities that form the basis of research conducted at CRHEA. It brings together 13 researchers and 8 engineers around epitaxial reactors adapted to the growth of materials with wide band gaps, including III element nitrides, but also SiC and ZnO as well as 2D materials like graphene.
The different equipments are mainly distinguished by the epitaxial method, either by ultrahigh-vaccuum molecular beam epitaxy (MBE, 8 reactors) or by vapor phase epitaxy (CVD or MOCVD, 6 reactors).
We can then further differentiate them by the epitaxial materials and the types of sources, their geometry, their capacity (from 2'' to 8''), or the accessible temperatures (up to 1700° C). The table below gives a description of the various reactors, classified by growth method and material.
MBE reactors (8)
|Riber Compact 21||ZnMgO||3"||Plasma O||Zoterac (FET-Open)|
|Riber Compact 21T||III-nitrides||4"||NH3, plasma N||GraNitE, OptoTeraGaN, Destinee, ED-GaN, GoSiMP, BREAkuP, ShoGaN, NEMSGaN|
|Riber 32P||III-nitrides, rare earth||2"||Gd and Sm sources|
|Riber C21S||III-nitrides||3"||NH3, high temperature||Projets ANR|
|Riber R32P (JB)||III-nitrides||3"||Mg doping||NanoGaNUV||Connected to Riber 32P (BD)|
|Riber R32P (BD)||III-nitrides||3"||Obelix, Duvet, Napoli||Connected to Riber 32P (JB)|
|Riber Epineat||ZnMgO||3"||Plasma N, O||Plug-And-Bose, ZONE|
|Riber 49||III-nitrides||8"||NH3, Plasma N||Partenariats industriels|
CVD/MOCVD reactors (6)
|Thomas Swan CCS||III-nitrides||4"||Showerhead|
|R1 (home-made reactor)||SiC, graphene||2"||High temperature||Graphmet, GoSiMP, Granite, H2Mems|
|Vertical (home-made reactor)||III-nitrides||2"||O2 gas line||NanoGaNUV|
|R5 (home-made reactor)||III-nitrides||2"||High temperature||GaNex|