Photo de Marcin Zielinski
Name : Marcin Zielinski
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Team(s) : Electro   
: +33 4 93 95 7828

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Publications (78)


⋄ AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T. Huong Ngo, M.A. Daher, M. Zielinski, D. Alquier, J.C. De Jaeger and Y. Cordier
Mat. Sci. For., 1062,  482-486, (2022) - Article de conférence

⋄ Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material

M. Zielinski, M. Bussel, C. Moisson, H. Mank, S. Monooye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062,  140-145, (2022) - Article de conférence

⋄ Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride

M. Zielinski, M. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062,  84-88, (2022) - Article de conférence

⋄ Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon

M. Zielinski, S. Monnoye, H. Mank, F. Torregrosa, G. Grosset, Y. Spiegel, M. Portail, A. Michon
Mat. Sci. For., 1004,  132, (2020) - Article de conférence

⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,7,  1900760, (2020) - Papier régulier

⋄ Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre
J. Cryst. Growth, 310,  3174-3182, (2008) - Papier régulier

⋄ CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut

R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon
Mat. Sci. For., 897,  731 - 734, (2017) - Papier régulier

⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses

E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,  1900760, (2019) - Papier régulier

⋄ Influence of aluminum incorporation on mechanical properties of 3C-SiC epilayers

J.F. Michaud, M. Zielinski, J. Ben Messaoud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 924,  318-321, (2018) - Article de conférence

⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A, 214(4),  1600436, (2017) - Papier régulier

⋄ Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

S. Contreras, L. Konczewicz, P. Kwasnicki, R. Arvinte, H. Peyre, T. Chassagne, M. Zielinski, M. Kayambaki, S. Juillaguet, K. Zekentes
Mat. Sci. For., 858,  249-252, (2016) - Article de conférence

⋄ Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques

G. Liaugaudas, D. Dargis, P. Kwasnicki, R. Arvinte, M. Zielinski, K. Jarašiūnas
J. Phys. D: Appl. Phys., 48,  025103, (2015) - Papier régulier

⋄ p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre
Mat. Sci. For., 858,  137-142, (2016) - Article de conférence - invité

⋄ Optical characterization of p-type 4H-SiC epilayers

G. Liaugaudas, D. Dargis, P. Kawasnicki, H. Peyre, R. Arvinte, S. Juillaguet, M. Zielinski, K. Jarašiūnas
Mat. Sci. For., 821-823,  249-252, (2015) - Article de conférence

⋄ Comparative studies of n-type 4H-SiC: Raman vs Photoluminescence spectroscopy

P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, S. Juillaguet
Mat. Sci. For., 821-823,  237-240, (2015) - Article de conférence

⋄ Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition

T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Souliere, G.Ferro, H.B. Weber, M. Krieger
Mat. Sci. For., 778-780,  261, (2014) - Article de conférence

⋄ Raman investigation of heavily Al doped 4H-SiC layers grown by CVD

P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski,L. Konczewicz, S. Contreras, J. Camassel and S. Juillaguet
Mat. Sci. For., 806,  51, (2015) - Article de conférence

⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud
Appl. Phys. Lett., 108,  011608, (2016) - Papier régulier

⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers

R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For., 821-823,  1003, (2015) - Article de conférence

⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect

R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud
Mat. Sci. For., 821-823,  978, (2015) - Article de conférence

⋄ Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers

R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre
Mat. Sci. For., 821-823,  149, (2015) - Article de conférence

⋄ Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier
Nat. Commun, 6,  6806, (2015) - Papier régulier

⋄ Investigation of Aluminium incorporation in 4H-SiC epitaxial layers

R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet and H. Peyre
Mat. Sci. For., 45,  806, (2015) - Article de conférence

⋄ 3C-SiC : new interest for MEMS devices

J.F. Michaud, M. Portail, T. Chassagne, M .Zielinski and D. Alquier
Mat. Sci. For., 3,  806, (2015) - Article de conférence

⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment

M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski
J. Cryst. Growth, 157,  404, (2014) - Papier régulier

⋄ Electrothermally driven high frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J.F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou and S. Gauthier
J. Appl. Phys., 054304,  116, (2014) - Papier régulier

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films

Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398,  23, (2014) - Papier régulier

⋄ Rotated domain network in graphene on cubic-SiC(001)

A.N. Chaika, O.V. Molodtsova, A.A. Zakharov, D. Marchenko, J. Sánchez-Barriga, A. Varykhalov, S.V. Babenkov, M. Portail, M. Zielinski, B.E. Murphy, S.A. Krasnikov, O. Lübben, I.V. Shvets and V.Y. Aristov
Nanotechnology, 25,  135605, (2014) - Papier régulier

⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104,  071912, (2014) - Papier régulier

⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD

A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742,  117, (2013) - Article de conférence

⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113,  203501, (2013) - Papier régulier

⋄ Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate

J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
Microelec. Engineering, 105,  65, (2013) - Papier régulier

⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)

A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720,  625, (2012) - Article de conférence

⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720,  621, (2012) - Article de conférence

⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349,  27, (2012) - Papier régulier

⋄ Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier
J. Appl. Phys., 111,  053507, (2012) - Papier régulier

⋄ A new approach for AFM cantilever elaboration with 3C-SiC

S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier
Materials Letters , 77,  54, (2012) - Papier régulier

⋄ Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC

X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Nucl. Instr. and Method Phys. Research B, 269,  2020, (2011) - Papier régulier

⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain

A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9,  175-178, (2011) - Article de conférence

⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)

A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711,  253, (2012) - Article de conférence

⋄ Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC

J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 711,  179, (2012) - Article de conférence

⋄ Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si

X. Song, J. Biscarrat; A. E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Mat. Sci. For., 711,  154, (2012) - Article de conférence

⋄ Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers

S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 711,  84, (2012) - Article de conférence

⋄ Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition

S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier
Mat. Sci. For., 711,  61, (2012) - Article de conférence

⋄ Analytical model of stress relaxation in 3C-SiC layers on silicon

M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier
Mat. Sci. For., 679-680,  79, (2011) - Article de conférence

⋄ Electrical characterization of nitrogen implanted 3C-SiC by SSRM and c-TLM measurments

X. Song, A.E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 679-680,  193, (2011) - Article de conférence

⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses

M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier
AIP Conf Proc, 1292,  115, (2010) - Article de conférence

⋄ Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon

S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J.F. Michaud, M. Portail, and D. Alquier
AIP Conf Proc, 1292,  15, (2010) - Article de conférence

⋄ High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature

A.E. Bazin, J.F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, and D. Alquier
AIP Conf Proc, 1292,  51, (2010) - Article de conférence

⋄ Micromachining of thin 3C-SiC films for mechanical properties investigation

J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
ACS Appl. Electron. Mater., 1246,  B09-04, (2010) - Article de conférence

⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett., 97,  171909, (2010) - Papier régulier

⋄ Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation

A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne, M. Portail, M. Zielinski, E. Collard, D. Alquier
Mat. Sci. Eng. B, 171,  120, (2010) - Papier régulier

⋄ Epitaxial graphene on Cubic SiC(111)/Si(111) substrate

A. Ouerghi, A. Kahouli , D. Lucot , M. Portail , L. Travers , J. Gierack , J. Penuelas , P. Jegou , A. Shukla , T. Chassagne , M. Zielinski
Appl. Phys. Lett., 96,  191910, (2010) - Papier régulier

⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
Mat. Sci. For., 600-603,  1277-1280, (2009) - Article de conférence

⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
ACS Appl. Electron. Mater., 1068,  C04-05, (2008) - Article de conférence

⋄ Evidence of electrical activity of extended defects in 3C-SiC grown on Si

X. Song, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Appl. Phys. Lett., 96,  142104, (2010) - Papier régulier

⋄ SiC on SOI resonators: a route for electrically driven MEMS in harshenvironment

M. Placidi, A. Pérez-Tomás, P. Godignon, N. Mestres, G. Abadal, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648,  845-848, (2010) - Article de conférence

⋄ Recent advances in surface preparation of silicon carbide and other wide band gap materials

M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A.E. Bazin, J.F. Michaud, M. Portail
Mat. Sci. For., 645-648,  753-758, (2010) - Article de conférence - invité

⋄ Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers

A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648,  585-588, (2010) - Article de conférence

⋄ Thermally induced surface reorganization of 3C-SiC(111) epilayersgrown on silicon substrates

M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski
Mat. Sci. For., 645-648,  155-158, (2010) - Article de conférence

⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski
Appl. Phys. Lett., 95,  081903, (2009) - Papier régulier

⋄ Advances in liquid phase conversion of (100) and (111) oriented Si wafers into self standing 3C-SiC

M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel
Mat. Sci. For., 615-617,  49, (2009) - Article de conférence

⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon

M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier
Mat. Sci. For., 615-617,  169, (2009) - Article de conférence

⋄ Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy

M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry
Mat. Sci. Eng. B, 165,  42, (2009) - Papier régulier

⋄ Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy

M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier
Mat. Sci. Eng. B, 165,  9, (2009) - Papier régulier

⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates

M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz
J. Appl. Phys., 105,  083505, (2009) - Papier régulier

⋄ P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si

A.E. Bazin, J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, J.F. Lecoq, E. Collard, D. Alquier
Mater. Res. Soc. Symp. Proc., 1068,  1068-C07-09, (2008) - Article de conférence

⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates

M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier
Mater. Res. Soc. Symp. Proc., 1069,  1069-D07-09, (2008) - Article de conférence

⋄ AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
J. Cryst. Growth, 310,  4417–4423, (2008) - Papier régulier

⋄ Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne
Phys. Stat. Sol. (c), 5, No. 6,  1983–1985, (2008) - Article de conférence

⋄ Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates

M. Zielinski, M. Portail, T. Chassagne, Y. Cordier
Mat. Sci. For., 600-603,  207-210, (2008) - Article de conférence

⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates

M. Portail, M. Nemoz, M. Zielinski, T. Chassagne
Mat. Sci. For., 600-603,  231, (2008) - Article de conférence

⋄ Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras; J. Camassel
Phys. Stat. Sol. (a), 204,  981, (2007) - Article de conférence

⋄ Low Specific Contact Resistance to 3C-SiC grown on (100) Si substrates

A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard; D. Alquier
Mat. Sci. For., 556-557,  721, (2007) - Article de conférence

⋄ Trends in nitrogen doping for 3C-SiC films on silicon

M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras and J. Camassel
Mat. Sci. For., 556-557,  207, (2007) - Article de conférence

⋄ Application of LTPL Investigation Methods to CVD-Grown SiC

J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud
Chem. Vap. Deposition, 12,  549–556, (2006) - Papier régulier

⋄ Stress relaxation during the growth of 3C-SiC/Si thin films

M. Zielinski, A. Leycuras, S. Ndiaye, T. Chassagne
Appl. Phys. Lett., 89,  131906, (2006) - Papier régulier

⋄ High Pressure Study of the Electrical Transport Phenomena in AlGaN/GaN Heterostructures

Ch. Consejo, L. Konczewicz, S. Contreras, S. Lepkowsky, M. Zielinski, J.L. Robert, P. Lorenzini, Y. Cordier
Phys. Stat. Sol. (b), 235 (2),  232-237, (2003) - Article de conférence

Current contracts


Old contracts


Current supervisions


Old supervisions


Roxana Arvinte (PhD Student) (2016)

HDR


Élaboration de couches épitaxiales de carbure de silicium, évaluation de leurs propriétés structurales et exemples d’applications technologiques

Post-doc


 

PhD


 

Curriculum