Name : Emmanuel Beraudo
Status : Engineer
Grade : IEHC
Team(s) : Nano Health and safety Workshop
☎ : +33 4 93 95 4221
Functions
Publications (8)
⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau
and P Vennéguès |
⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez |
⋄ Fabrication and growth of GaN-based micro and nanostructures B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez |
⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez |
⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf |
⋄ Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode T. Gühne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf |
⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch |
⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1) S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier |
