Name : Yvon Cordier
Status : Researcher
Grade : DR1
Team(s) : Electro
☎ : +33 4 93 95 7820
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Activities
Electro team leader
Publications (228)
⋄ Highlighting the role of 3C‒SiC in the performance optimization of (Al,Ga)N‒based High‒Electron Mobility Transistors
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean‑Claude De Jaeger, Yvon Cordier
Mat Sci Semicon Proc, 171, 107977, (2024) - Papier régulier⋄ Large area MoS2 films grown on sapphire and GaN substrates by pulsed laser deposition
Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová-Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo
Nanomaterials, 13, 2837, (2023) - Papier régulier⋄ Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography
Samba Ndiaye, Caroline Elias, Aïssatou Diagne, Hélène Rotella, Frederic Georgi, Maxime Hugues, Yvon Cordier, Francois Vurpillot, Lorenzo Rigutti
Appl. Phys. Lett., 123, 162102, (2023) - Papier régulier⋄ Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy
Maroun Dagher, Camille Sonneville, Georges Brémond, Dominique Planson, Eric Frayssinet, Yvon Cordier, Helge Haas, Mohammed Reda Iretki, Julien Buckley, Vishwajeet Maurya, Matthew Charles, Jean-Marie Bluet
Phys. Stat. Sol. A, 20, 2200841 , (2023) - Papier régulier⋄ Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films
R. Aristegui, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, I. Paradisanos, C. Robert, X. Marie, B. Urbaszek, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 108, 125421, (2023) - Papier régulier⋄ Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics
J. Mehta, I. Abid, R. Elwaradi, Y. Cordier, and F. Medjdoub
Advances in Electrical Engineering, Electronics and Energy, 5, 100263, (2023) - Papier régulier⋄ Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications
R. Elwaradi, E. Frayssinet, S. Chenot, Y. Bouyer, M. Nemoz, Y. Cordier
Microelectron Eng, 277, 112017, (2023) - Article de conférence⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Giuseppe Greco, Patrick Fiorenza, Emanuela Schiliro, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte
Microelectron Eng, 276, 112009, (2023) - Article de conférence⋄ Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate
Marie Lesecq, Yassine Fouzi, Ali Abboud, Nicolas Defrance, François Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude De Jaeger, Eric Frayssinet, Yvon Cordier
Microelectron Eng, 276, 111998, (2023) - Article de conférence⋄ Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy
Thomas Kaltsounis, Helge Haas, Matthieu Lafossas, Simona Torrengo, Vishwajeet Maurya, Julien Buckley, Denis Mariolle, Marc Veillerot, Alain Gueugnot, Laurent Mendizabal, Yvon Cordier, Matthew Charles
Microelectron Eng, 273, 111964, (2023) - Article de conférence⋄ High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers
G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, G. Ducournau, Y. Roelens, Y. Cordier, M. Zaknoune
J. Electron. Mat., 52, 5249, (2023) - Papier régulier⋄ Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN
F. Giannazzo, S.E. Panasci, E. Schiliro, G. Greco, F. Roccaforte, G. Sfuncia, G. Nicotra, M. Cannas, S. Agnello, E. Frayssinet, Y. Cordier, A. Michon, A. Koos, B. Pecz
Appl. Surf. Sci., 631, 157513, (2023) - Papier régulier⋄ High Al-content AlGaN channel high electron mobility transistors on silicon substrate
J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, and F. Medjdoub
Advances in Electrical Engineering, Electronics and Energy, 3, 100114, (2023) - Papier régulier⋄ Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in Vertical GaN-on-GaN Schottky Barrier Diodes
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Hervé Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Yvon Cordier and Dominique Planson
Micro and Nanostructures, 172, 207433, (2022) - Papier régulier⋄ Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode
Atse Julien Eric N'Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong-Viet Phung, Frederic Morancho, Hassan Maher, Dominique Planson
Crystals, 13, 713, (2023) - Papier régulier⋄ Effects of GaN channel downscaling in AlGaN-GaN high electron mobility transistor structures grown on AlN bulk substrate
R. Elwaradi, J. Mehta, T. H. Ngo, M. Nemoz, C. Bougerol, F. Medjdoub, Y. Cordier
J. Appl. Phys., 133, 145705, (2023) - Papier régulier⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN
Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
APL Materials, 11, 031105, (2023) - Papier régulier⋄ Fabrication, and DC and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes
Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude De Jaeger
JVST B, 41, 0122022, (2022) - Papier régulier⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth
M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès
Crystals, 12, 1605, (2022) - Papier régulier⋄ Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N’Dohi, Heré Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
Microelectronics J, 128, 105575, (2022) - Papier régulier⋄ Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, J. A. Novoa-López, V. Hoel, Y. Cordier, J. Mateos, T. González
Sensors, 22, 1515, (2022) - Papier régulier⋄ Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations
Harpreet Kaur, Rajesh Sharma, T. Laurent, J. Torres, P. Nouvel, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.-P. Faurie, B. Beaumont
Appl. Phys. A, 128, 144, (2022) - Papier régulier⋄ Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
B. Orfao; G. Di Gioia; B. G. Vasallo; S. Pérez; J. Mateos; Y. Roelens; E. Frayssinet; Y. Cordier; M. Zaknoune; T. González
J. Appl. Phys., 132, 044502, (2022) - Papier régulier⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
J. Cryst. Growth, 593, 126779, (2022) - Papier régulier⋄ A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
P. Quach, A. Jollivet, A. Babichev, N. Isac, M. Morassi, A. Lemaitre, P. A. Yunin, E. Frayssinet, P. de Mierry, M. Jeannin, A. Bousseksou, R. Colombelli, M. Tchernycheva, Y. Cordier, and F. H. Julien
Appl. Phys. Lett., 120, 171103, (2022) - Papier régulier⋄ Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/Sapphire template
Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub and Philippe Ferrandis
J. Appl. Phys., 131, 124501, (2022) - Papier régulier⋄ Micro Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications
Atse Julien Eric N’Dohi, Camille Sonneville, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
AIP. Adv, 12, 025126, (2022) - Papier régulier⋄ Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells
R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 106, 035429, (2022) - Papier régulier⋄ AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications
M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T. Huong Ngo, M.A. Daher, M. Zielinski, D. Alquier, J.C. De Jaeger and Y. Cordier
Mat. Sci. For., 1062, 482-486, (2022) - Article de conférence⋄ Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material
M. Zielinski, M. Bussel, C. Moisson, H. Mank, S. Monooye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062, 140-145, (2022) - Article de conférence⋄ Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride
M. Zielinski, M. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062, 84-88, (2022) - Article de conférence⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188, 108210, (2022) - Papier régulier⋄ Stability of the threshold voltage in fluorine-implanted normally‑off AlN/GaN HEMTs co‑integrated with commercial normally‑on GaN HEMT technology
Florent ALBANY, François LECOURT, Ewa WALASIAK, Nicolas DEFRANCE, Arnaud CURUTCHET, Hassan MAHER, Yvon CORDIER, Nathalie LABAT, Nathalie MALBERT
Microelectronics Reliabilty, 126, 114291, (2021) - Article de conférence⋄ Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution
N. Al Taradeh, E. Frayssinet, C. Rodriguez, F. Morancho, C. Sonneville, L.-V. Phung, A. Soltani, F. Tendille, Y. Cordier, H. Maher
Energies, 12, 4241, (2021) - Papier régulier⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses
E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,7, 1900760, (2020) - Papier régulier⋄ AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
Idriss Abid, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, Hideto Miyake and Farid Medjdoub
Electronics, 10, 635, (2021) - Papier régulier⋄ New barrier layer design for the fabrication of GaN-MIS-HEMT Normally-off transistor
F. Cozette, B. Hassan, C. Rodriguez, E. Frayssinet, R. Comyn, F. Lecourt, N. Defrance, N. Labat, F. Boone, A. Soltani, A. Jaouad, Y. Cordier, H. Maher
Semicond. Sci. Tech., 36, 034002, (2020) - Papier régulier⋄ Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications
F. Giannazzo, E. Schilirò, R. Lo Nigro, P. Prystawko, Y. Cordier
Nitride Semiconductor Tech., , 397, (2020) - Livres et chapitres de livres⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier
Semicond. Sci. Tech., 36, 024001, (2020) - Papier régulier⋄ Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters
T.H. Ngo, R. Comyn, E. Frayssinet, H. Chauveau, S. Chenot, B. Damilano, F. Tendille, B. Beaumont, J.-P. Faurie, N. Nahas, Y. Cordier
J. Cryst. Growth, 552, 125911, (2020) - Papier régulier⋄ Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
Giannazzo, Filippo; Dagher, Roy; Schilirò, Emanuela; Panasci, Salvatore; Greco, Giuseppe; Nicotra, Giuseppe; Roccaforte, Fabrizio; Agnello, Simonpietro; Brault, Julien; Cordier, Yvon; Michon, Adrien
Nanotechnology, 32, 015705, (2020) - Papier régulier⋄ Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies
M. Bah, D. Valente, M. Lesecq, N. Defrance, M. Garcia Barros, J-C. De Jaeger, E. Frayssinet, R. Comyn, T.H. Ngo, D. Alquier, Y. Cordier
Sci Rep., 10, 14166, (2020) - Papier régulier⋄ Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating
H. Spisser, A. Grimault-Jacquin, N. Zerounian, A. Aassime, L. Cao, F. Boone, H. Maher, Y. Cordier, F. Aniel
Choisir un journal..., 37, 243 - 257, (2016) - Papier régulier⋄ Voltage controlled terahertz transmission through GaN quantum wells
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V. Korotyevyev, V. Kochelap
Appl. Phys. Lett., 99, 82101, (2011) - Papier régulier⋄ CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut
R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon
Mat. Sci. For., 897, 731 - 734, (2017) - Papier régulier⋄ Measurement of Pulsed Current–Voltage Characteristicsof AlGaN/GaN HEMTs from Room Temperature to 15 K
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Acta Phys. Pol. A, 119, 196 - 198, (2011) - Papier régulier⋄ AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology
M. Abou Daher, M. Lesecq, P. Tilmant, N. Defrance, M. Rousseau, Y. Cordier, J.C. De Jaeger, and J.G. Tartarin
JVST B, 38, 033201, (2020) - Papier régulier⋄ Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates
A. Jollivet, M. Tchernycheva, V. Trinité, E. Frayssinet, P. De Mierry, Y. Cordier and F.H. Julien
Appl. Phys. Lett., 115, 261103, (2019) - Papier régulier⋄ 2 W/mm power density of an AlGaN/GaN HEMT grown on Free-Standing GaN Substrate at 40 GHz, Semiconductor Science and Technology
M.R. Irekti, M. Lesecq, N. Defrance, E. Okada, E. Frayssinet, Y. Cordier, J.G. Tartarin, J.C. De Jaeger
Semicond. Sci. Tech., 34, 12LT01, (2019) - Papier régulier⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses
E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217, 1900760, (2019) - Papier régulier⋄ High lateral breakdown voltage in thin channel AlGaN/GaN high electron mobility transistors on AlN/sapphire templates
I. Abid, R. Kabouche, C. Bougerol, J. Pernot, C. Masante, R. Comyn, Y. Cordier, F. Medjdoub
Micromachines , 10, 690, (2019) - Papier régulier⋄ High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
F. Giannazzo, G. Greco, E. Schilirò, R. Lo Nigro, I. Deretzis, A. La Magna, F. Roccaforte, F. Iucolano, S. Ravesi, E. Frayssinet, A. Michon, Y. Cordier
ACS Appl. Electron. Mater., 1, 2342, (2019) - Papier régulier⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures
F. Chiaruttini, T. Guillet, C Brimont, B. Jouault, P. Lefebvre, J. Vives, S. Chenot, Y. Cordier, B. Damilano, and M. Vladimihristellerova
Nano Lett., 19, 4911, (2019) - Papier régulier⋄ Kapitza thermal resistance characterization of epitaxial graphene-SiC(0001) interface
G. Hamaoui, R. Dagher, Y. Cordier, A. Michon, S. Potiron, M. Chirtoc, and N. Horny
Appl. Phys. Lett., 114, 1601, (2019) - Papier régulier⋄ Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
E. Schilirò, F. Giannazzo, C. Bongiorno, S. Di Franco, G. Greco, F. Roccaforte, P. Prystawko, P. Kruszewski, M. Leszczyński, M. Krysko, A. Michon, Y. Cordier, I. Cora, B. Pecz, H. Gargouri, R. Lo Nigro
Mat Sci Semicon Proc, 97, 35-39, (2019) - Papier régulier⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon
Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz
J. Cryst. Growth, 507, 220, (2019) - Papier régulier⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer
E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 214, 1600419, (2017) - Article de conférence⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection
M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin
IEEE FCS, 2011, 1-5, (2011) - Article de conférence⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers
M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot
IEEE MEMS, 24th MEMS Int. Conf., 581-584, (2011) - Article de conférence⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape
B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel
IEEE Photonic Tech L, 30, 1567, (2018) - Papier régulier⋄ A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations
R. Dagher, E. Blanquet, C. Chatillon, T. Journot, M. Portail, L. Nguyen, Y. Cordier and A. Michon
Cryst. Eng. Comm., 20, 3702-3710, (2018) - Papier régulier⋄ Graphene integration with nitride semiconductors for high power and high frequency electronics
F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 214, 1600460, (2016) - Papier régulier⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate
T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier
Phys. Stat. Sol. B, 255(5), 1700399, (2018) - Papier régulier⋄ A combined growth process for state-of-the-art GaN on silicon
G. Gommé, E. Frayssinet, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4, 1600449, (2017) - Papier régulier⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate
G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4, 1600450, (2017) - Papier régulier⋄ Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
N. Le Biavan, M. Hugues, M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, D. Lefebvre, Y. Cordier, B. Vinter, F.H. Julien, A. Hierro, and J.M. Chauveau
Appl. Phys. Lett., 111, 231903, (2017) - Papier régulier⋄ Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors
F. Giannazzo, G. Fisichella, G. Greco, E. Schiliro, I. Deretzis, R. Lo Nigro, A. La Magna, F. Roccaforte, F. Iucolano, S. Lo Verso, S. Ravesi, P. Prystawko, P. Kruszewski, M. Leszczynski, R. Dagher, E. Frayssinet, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 215(10), 1700653, (2017) - Papier régulier⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate
R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 215(9), 1700642, (2017) - Papier régulier⋄ Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon
Y. Cordier, R. Comyn, E. Frayssinet, M. Khoury, M. Lesecq, N. Defrance, and J.-C. De Jaeger
Phys. Stat. Sol. A, 10, 1700637, (2017) - Papier régulier⋄ Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
S. Latrach, E. Frayssinet, N. Defrance, S. Chenot, Y. Cordier, C. Gaquière and H. Maaref
Current Applied Physics, 17, 1601-1608, (2017) - Papier régulier⋄ Anomalous DC and RF Behavior of Virgin AlGaN/AlN/GaN HEMTs
H. Sánchez Martín, O. García, S. Perez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. Gonzalez, J. Mateos, I.Iniguez de la Torre
Semicond. Sci. Tech., 32, 035011, (2017) - Papier régulier⋄ Recent improvements of flexible GaN-based HEMT technology
S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, Y. Cordier, B. Damilano, G. Tabares Jimenez, A. Ebongue, and V. Hoel
Phys. Stat. Sol. A, 214(4), 1600484, (2017) - Papier régulier⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates
R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A, 214(4), 1600436, (2017) - Papier régulier⋄ Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si
P. Leclaire, E. Frayssinet, C. Morelle, Y. Cordier, D. Théron and M. Faucher
J. Micromech. Microeng., 26, 105015, (2016) - Papier régulier⋄ Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS
R. Comyn, Y. Cordier, S. Chenot, A. Jaouad, H. Maher, V. Aimez
Phys. Stat. Sol. A, 213, 917-924, (2016) - Papier régulier⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes
G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier
IEEE Photonic Tech L, 28, 1661, (2016) - Papier régulier⋄ First power performance demonstration of flexible AlGaN/GaN High Electron Mobility Transistor
S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, E. Okada, Y. Cordier, B. Damilano, G. Tabares-Jiménez, A. Ebongué, and V. Hoel
IEEE Electron Device Letters, 37, 553, (2016) - Papier régulier⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth, 433, 165-171, (2016) - Papier régulier⋄ AlGaN/GaN High Electron Mobility Transistors grown by Ammonia Source Molecular Beam Epitaxy
Y. Cordier
Gallium Nitride (GaN): Physics, Devices, and Technology, F.Medjdoub, CRC Press, 45-60, (2015) - Livres et chapitres de livres⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate
B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A, 212, 2297–2301, (2015) - Papier régulier⋄ Al(Ga)N/GaN High Electron Mobility Transistors on Silicon
Y. Cordier
Phys. Stat. Sol. A, 212, 1049-1058, (2015) - Papier invité⋄ Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS
R. Comyn, Y. Cordier, V. Aimez, and H. Maher
Phys. Stat. Sol. A, 212, 1145-1152, (2015) - Article de conférence⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers
R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For., 821-823, 1003, (2015) - Article de conférence⋄ Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor
A. Pérez-Tomás, G. Catalàn, A. Fontserè, V. Iglesias, H. Chen, P.M. Gammon, M.R. Jennings, M. Thomas, C.A. Fisher, Y.K. Sharma, M. Placidi, M. Chmielowska, S. Chenot, M. Porti, M. Nafría and Y. Cordier
Nanotechnology, 26, 115203, (2015) - Papier régulier⋄ Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate
P. Altuntas, F. Lecourt, A. Cutivet, N. Defrance, E. Okada, M. Lesecq, S. Rennesson, A. Agboton, Y. Cordier, V. Hoel, and J.C. De Jaeger
IEEE Electron. Device Lett., 36, 303, (2015) - Papier régulier⋄ On the Correlation Between Kink Effect and Effective Mobility in InAlN/GaN HEMTs
P. Altuntas, N. Defrance, M. Lesecq, A. Agboton, R. Ouhachi, E. Okada, C. Gaquiere, J. De Jaeger, E. Frayssinet, Y. Cordier
Proc. of the 9th European Microwave Integrated Circuit Conference, , 88-91, (2014) - Article de conférence⋄ Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications
S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
Mat. Sci. For., 806, 81-87, (2014) - Article de conférence⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers
Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Phys. Stat. Sol. C, 3-4, 498-501, (2014) - Article de conférence⋄ Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices
O. Arenas, É. Al Alam, A. Thevenot, Y. Cordier, A. Jaouad, V. Aimez, H. Maher, R. Arès and F. Boone
IEE JEDS, 2, 145-148, (2014) - Papier régulier⋄ Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder
W. Desrat, M. Chmielowska, S. Chenot, Y. Cordier, and B. Jouault
Eur. Phys. J. Appl. Phys., 68, 20102, (2014) - Papier régulier⋄ Gallium Nitride as an electromechanical material
M. Rais-Zadeh, V. Gokhale, A. Ansari, M. Faucher, D. Theron, Y. Cordier, L. Buchaillot
IEEE J.MEMS, 23, 1252-1271, (2014) - Papier régulier⋄ AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications
P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Theron, M. Faucher
Semicond. Sci. Tech., 29, 115018, (2014) - Papier régulier⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films
F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404, 146-151, (2014) - Papier régulier⋄ Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature
A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knap, Y. Cordier, S. Chenot, M. Chmielowska, P. Shiktorov, E. Starikov, V. Gruzinskis
Lithuanian Journal of Physics, 54, 58-62, (2014) - Papier régulier⋄ Magnetic properties of Gd doped GaN
S. Shvarkov, A. Ludwig, A. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H.W. Becker, D. Rogalla, and D. Reuter
Phys. Stat. Sol. B, 251, 1673-1684, (2014) - Papier régulier⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application
A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron
Phys. Stat. Sol. A, 211, 1655-1659, (2014) - Papier régulier⋄ Highly resistive epitaxial Mg-doped GdN thin films
C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett., 106, 022401, (2015) - Papier régulier⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films
Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398, 23, (2014) - Papier régulier⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104, 071912, (2014) - Papier régulier⋄ Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance
A. Pérez-Tomás, A. Fontserè, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
Semicond. Sci. Tech., 27, 125010, (2012) - Papier régulier⋄ Chapter 11: Nitride-based electron devices for high-power/high-frequency applications
Y. Cordier, T. Fujishima, B. Lu, E. Matioli, and T. Palacios
III Nitride Semiconductors and their Modern Devices, 1, 366, (2013) - Livres et chapitres de livres⋄ Room temperature generation of THz radiation in GaN quantum wells structures
A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knapb, Y. Cordier, S. Chenot, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis
Proc. SPIE, 8624, 862409, (2013) - Article de conférence⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate
T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier
Phys. Stat. Sol. C, 10, 425, (2012) - Article de conférence⋄ Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
ECS Solid State Letters, 2, p4, (2012) - Papier régulier⋄ Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors
A. Perez-Tomas, A. Fontserè, S. Sanchez, M.R. Jennings, P.M. Gammon, and Y. Cordier
Appl. Phys. Lett., 102, 023511 , (2013) - Papier régulier⋄ Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates
N. Defrance, F. Lecourt, Y. Douvry, M. Lesecq, V. Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, J.C. De Jaeger
IEEE Transactions on Electron Devices, 60, 1054, (2013) - Papier régulier⋄ Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons
R. Messina, J.P. Hugonin, J.J. Greffet, F. Marquier, Y. De Wilde, A. Belarouci, L. Frechette, Y. Cordier and P. Ben-Abdallah
Phys. Rev. B, 87, 085421 , (2013) - Papier régulier⋄ Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz
A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, M. Rousseau, M. Chmielowska, M. Ramdani, and J.C. De Jaeger
IEEE Electron Devices Letters, 34, 490, (2013) - Papier régulier⋄ Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S.Chenot, J.C. Moreno, S. Rennesson and Y. Cordier
Appl. Phys. Lett., 102, 093503, (2013) - Papier régulier⋄ Terahertz transmission and effective gain measurement of two-dimensional electron gas
R. Sharma, T. Laurent, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Phys. Stat. Sol. A, 210, 1454, (2013) - Papier régulier⋄ Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
A. Pérez-Tomás, A. Fontserè, J. Llobet, M. Placidi, S. Rennesson, N. Baron, S. Chenot, J.C. Moreno, and Y. Cordier
J. Appl. Phys., 113, 174501, (2013) - Papier régulier⋄ Magnetotransport studies of AlGaN/GaN heterostructures with 2 two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination
W. Desrat, S. Contreras, L. Konczewicz, B. Jouault, M. Chmielowska, S. Chenot, and Y. Cordier
J. Appl. Phys., 114, 023704, (2013) - Papier régulier⋄ Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology
A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, E. Okada, M. Chmielowska, M.R. Ramdani and J.C. De Jaeger
Semicond. Sci. Tech., 28, 094003, (2013) - Papier régulier⋄ Optimization of Al0.29Ga0.71N//GaN High Electron Mobility Transistor heterostructures for high power/frequency performances
S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
IEEE Transactions on Electron Devices, 60, 3105, (2013) - Papier régulier⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy
S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier
Phys. Stat. Sol. A, 210, 480-483, (2013) - Papier régulier⋄ Role of magnetic polarons in ferromagnetic GdN
F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87, 035202, (2013) - Papier régulier⋄ Comparison of electrical behavior of GaN-based MOS structures obtained by different PECVD process
E. Al Alam, I. Cortés, T.Begou, A. Goullet, F. Morancho, A. Cazarré, P. Regreny, J. Brault, Y. Cordier, M.P. Besland, K. Isoird
Mat. Sci. For., 711, 228-232, (2012) - Article de conférence⋄ Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate
M. Mattalah, A. Soltani, J.C. Gerbedoen, A. Ahaitouf, N. Defrance, Y. Cordier, and J.C. De Jaeger
Phys. Stat. Sol. C, 9, 1083-1087, (2012) - Article de conférence⋄ Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy
Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib
Phys. Stat. Sol. C, 9, 523-526, (2012) - Article de conférence⋄ Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, M.R. Jennings, P.M. Gammon, C.A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria,
Nanotechnology, 23, 395204, (2012) - Papier régulier⋄ Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1 )
A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno
Mat. Sci. Eng. B, 52, 2547-2550, (2012) - Papier régulier⋄ Electromechanical Transconductance Properties of a GaN MEMS Resonator with fully integrated HEMT Transducers
M. Faucher, Y. Cordier, M. Werquin, L. Buchaillot, C. Gaquière and D. Théron
JMEMS, 21, 370-378, (2012) - Papier régulier⋄ Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV
L.F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.C. Moreno, E. Frayssinet, and F. Semond
J. Appl. Phys., 111, 023511, (2012) - Papier régulier⋄ Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates
M. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, F. Semond
Solid State Electronics, 75, 86-92, (2012) - Papier régulier⋄ Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria
Appl. Phys. Lett., 101, 093505, (2012) - Papier régulier⋄ Effect of surface preparation and interfacial layer on the quality of GaN/SiO2 interfaces
E. Al Alam, I. Cortés, M.P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho
J. Appl. Phys., 109, 084511, (2011) - Papier régulier⋄ Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime
J.H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A.D. Wieck, and D. Hägele
Phys. Rev. B, 84, 153202, (2011) - Papier régulier⋄ Micro and nano analysis of 0.2W.mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings, M. Porti, A. Bayer, M. Lanza and M. Nafría
Appl. Phys. Lett., 99, 213504, (2011) - Papier régulier⋄ Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET
A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings
Microelectronic Engineering, 88 (10), 3140, (2011) - Papier régulier⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)
A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720, 625, (2012) - Article de conférence⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720, 621, (2012) - Article de conférence⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349, 27, (2012) - Papier régulier⋄ Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates
H.P.D. Schenk, A. Bavard, E. Frayssinet, X. Song, F. Cayrel, H. Ghouli, M. Lijadi, L. Naım, M. Kennard, Y. Cordier, D. Rondi and D. Alquier
APEX, 5, 025504, (2012) - Papier régulier⋄ Fabrication and growth of GaN-based micro and nanostructures
B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9, 412-427, (2012) - Papier invité⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)
A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711, 253, (2012) - Article de conférence⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck
J. Cryst. Growth, 338, 20, (2012) - Papier régulier⋄ Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V.V. Korotyeyev, and V.A. Kochelap
Appl. Phys. Lett., 99, 082101, (2011) - Papier régulier⋄ RF Performance of AlGaN/GaN High Electron Mobility Transistors grown on Silicon (110)
D. Marti, C.R. Bolognesi, Y. Cordier, M. Chmielowska, M. Ramdani
Applied Physics Express, 4, 064105, (2011) - Papier régulier⋄ Thermal effects in AlGaN/GaN/Si high electron mobility transistors
I. Saidi, Y. Cordier, M. Chmielowska, H. Mejri and H. Maaref
Solid State Electronics, 61, 1-6, (2011) - Papier régulier⋄ Deposited thin SiO2 for gate oxide on n-type and p-type GaN
M. Placidi, A. Constant, A. Fontserè, E. Pausas, I. Cortes, Y. Cordier, N. Mestres, R. Pérez, M.Zabala, J. Millán, P. Godignon and A. Pérez-Tomás
Journal of the Electrochemical Society, 157, H1008-H1013 , (2010) - Papier régulier⋄ Ohmic Contact Resistance dependence on Temperature for GaN devices
A. Pérez-Tomas, A. Fontsere, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon and M.R. Jennings
Mat. Sci. For., 679-680, 816-819, (2011) - Article de conférence⋄ 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
A. Pérez-Tomas, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan and P. Godignon
Mat. Sci. For., 645-648, 1207-1210, (2010) - Article de conférence⋄ Growth of GaN based structures on focused ion beam patterned templates
Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.Y. Lo, Y.Y. Hu, A. Ludwig, A.D. Wieck
Phys. Stat. Sol. C, 8, 1516–1519 , (2011) - Article de conférence⋄ Comparison of GaN-Based MOS Structures with Different Interfacial Layer Treatments
E. Al Alam, I. Cortes, M. P. Besland, P. Regreny, A. Goullet, F. Morancho, A. Cazzare, Y. Cordier, K. Isoird, F. Olivié
Proc. of the 27th conference on microelectronics, 2010, 459, (2010) - Article de conférence⋄ Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov and V. Gruzinskis
Acta Physica Polonica A, 119, 107-110, (2011) - Article de conférence⋄ Analysis of AlGaN/GaN Epi-material on Resistive Si(111) Substrate for MMIC Applications in Millimeter Wave Range
F. Lecourt, Y. Douvry, N. Defrance, V. Hoel, Y. Cordier, J.C. De Jaeger
Proc. of the 5th European Microwave Integrated Circuits Conference, 2010, 33-36, (2010) - Article de conférence⋄ Growth of thick continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard
J. Cryst. Growth, 314, 85-91, (2011) - Papier régulier⋄ Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy
E. Frayssinet, Y. Cordier, H.P.D. Schenk, and A. Bavard
Phys. Stat. Sol. C, 8, 1479-1482, (2011) - Article de conférence⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth, 312 - n° 19, 2683-2688 , (2010) - Papier régulier⋄ Deuterium Out-diffusion Kinetics in Magnesium-doped GaN
J. Chevallier, F. Jomard, N.H. Nickel, P. de Mierry, S. Chenot, Y. Cordier, M.A. di Forte-Poisson, and S. Delage
Mat. Res. Soc. Symp. Proc., 994, F03-22, (2007) - Article de conférence⋄ AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz
J.C. Gerbedoen, A. Soltani, S. Joblot, J.C. De Jaeger, C. Gaquière, Y. Cordier, and F. Semond
IEEE Trans. Electron Devices, 57, 1497-1503, (2010) - Papier régulier⋄ Anomalous Hall Effect in Gd-Implanted Wurtzite AlxGa1-N-x/GaN High Electron Mobility Transistor Structures
F.Y Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck
Materials Research Society Symposium Proceedings, 1111, 61-69, (2008) - Article de conférence⋄ Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells
T. Laurent, P. Nouvel, J. Torres, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, J.P. Faurie, B. Beaumont, E. Starikov, P. Shiktorov, V. Gruzinskis
Journal of Physics : Conference Series, 193, 012094, (2009) - Article de conférence⋄ Analysis of the C-V characteristic SiO2/GaN MOS capacitors
I. Cortes, E. Al-Alam, M.P. Besland, P. Regreny, F. Morancho, A. Cazarré, Y. Cordier, A. Goullet and K. Isoird
Proc. 7th Spanish Conference on Electron Devices, 7, 254-257, (2009) - Article de conférence⋄ Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns
Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary
Materials Science in Semiconductor Processing, 12, 16-20, (2009) - Article de conférence⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors
N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2, 715-718, (2009) - Article de conférence⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C, 6 - S2, 1020-1023, (2009) - Article de conférence⋄ Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)
Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M.P. Besland
Phys. Stat. Sol. C, 6 - S2, 1016-1019, (2009) - Article de conférence⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
Mat. Sci. For., 600-603, 1277-1280, (2009) - Article de conférence⋄ Performance of Unstuck Γ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10GHz
J.C. Gerbedoen, A.Soltani, N. Defrance, M. Rousseau, C. Gaquiere, J.C. De Jaeger, S. Joblot, Y. Cordier
European Microwave Integrated Circuits Conference, 2008, 330-333, (2008) - Article de conférence⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068, 51-56, (2008) - Article de conférence⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
ACS Appl. Electron. Mater., 1068, C04-05, (2008) - Article de conférence⋄ AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication
S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies
European Microwave Integrated Circuits Conference, 2007, 96-99, (2007) - Article de conférence⋄ Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance
Y. Cordier, N. Baron, M. Azize, S. Chenot
Revue de l Electricite et de l Electronique, 10, 73-77, (2009) - Article de conférence⋄ GaN transistor characteristics at elevated temperatures
A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, A. Constant, P. Godignon, and J. Millán
J. Appl. Phys., 106, 074519, (2009) - Papier régulier⋄ High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors
L. Bouguen, L. Konczewicz, S. Contreras, B. Jouault, J. Camassel, Y. Cordier
Mat. Sci. Eng. B, 165-1-2, 1-4, (2009) - Article de conférence⋄ Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators
M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahrèche , P. Bove, M. François, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, C. Gaquière, and D. Théron
Appl. Phys. Lett., 94, 233506, (2009) - Papier régulier⋄ Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration
P. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J.C. Moreno, and N.G. Tarr
Phys. Stat. Sol. A, 206, 371-374, (2009) - Papier régulier⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105, 033701, (2009) - Papier régulier⋄ Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source
F. Natali, Y. Cordier, C. Chaix, P. Bouchaib
J. Cryst. Growth, 311, 2029-2032, (2009) - Article de conférence⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B, 79, 035328, (2009) - Papier régulier⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311, 2002-2005, (2009) - Article de conférence⋄ Molecular beam epitaxy of group-III nitrides on silicon substrates : growth, properties and devices applications
F. Semond, Y. Cordier, N. Grandjean et al.
Phys. Stat. Sol. (a), 188 (2), 501-510, (2001) - Article de conférence - invité⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon
M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier
Mat. Sci. For., 615-617, 169, (2009) - Article de conférence⋄ Development of thick GaN-on-silicon layers for rectifier applications
H.P.D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, E. Béraudo, S. Chenot, Y. Cordier, and J.Y. Duboz
EWMOVPE-XIII, D.14, 343-346, (2009) - Article de conférence - invité⋄ Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy
M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier
Mat. Sci. Eng. B, 165, 9, (2009) - Papier régulier⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1, 121101, (2008) - Papier régulier⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates
M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier
Mater. Res. Soc. Symp. Proc., 1069, 1069-D07-09, (2008) - Article de conférence⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)
Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond
IEEE Electron Device Letters, 29, 1187-1189, (2008) - Papier régulier⋄ AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
J. Cryst. Growth, 310, 4417–4423, (2008) - Papier régulier⋄ Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne
Phys. Stat. Sol. (c), 5, No. 6, 1983–1985, (2008) - Article de conférence⋄ High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates
R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, and E. Muñoz
Phys. Stat. Sol. (c), 5 - n°6, 1971-1973, (2008) - Article de conférence⋄ Thickness and substrate effects on AlN thin film growth at room temperature
B. Abdallah, C. Duquenne, M.P. Besland, E. Gautron, P.Y. Jouan, P.Y. Tessier, J. Brault, Y. Cordier, and M.A. Djouadi
Eur. Phys. J. Appl. Phys., 43(3), 309-313, (2008) - Papier régulier⋄ Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates
M. Zielinski, M. Portail, T. Chassagne, Y. Cordier
Mat. Sci. For., 600-603, 207-210, (2008) - Article de conférence⋄ Magnetotransport in Gd-implanted wurtzite GaN/AlxGa1−xN high electron mobility transistor structures
F.Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A.D. Wieck
Appl. Phys. Lett., 92, 112111, (2008) - Papier régulier⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart
J. Cryst. Growth, 310, 948, (2008) - Article de conférence⋄ Composition analysis of semiconductor quantum wells by energy filtered convergent beam electron diffraction
D. Jacob, J.M. Zuo, A. Lefebvre, Y. Cordier
Ultramicroscopy, 108, 358–366, (2008) - Papier régulier⋄ Investigation of AlGaN/AlN/GaN Heterostructures for Magnetic Sensor Application from liquid helium temperature to 300°C
L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot, N. Baron
Appl. Phys. Lett., 92, 043504, (2008) - Papier régulier⋄ HIGH TEMPERATURE PULSED MEASUREMENTS OF AlGaN/GaN HEMTs ON HIGH RESISTIVE Si(111) SUBSTRATE
M. Werquin, D. Ducatteau, N. Vellas, E. Delos, Y. Cordier, R. Aubry, and C. Gaquiere
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 48, No. 11, 2303-2305, (2006) - Papier régulier⋄ Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT
A. Soltani, A. BenMoussa, S. Touati, V. Hoël, J.C. De Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M.A. Djouadi, C. Dua
Diamond and Related Materials, 16, 262–266, (2007) - Article de conférence⋄ AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification
S. Boulay, S. Touati, A.A. Sar, V. Hoel, C. Gaquière, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, and J. Massies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, No. 11, 2843-2848, (2007) - Papier régulier⋄ AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies
J. Cryst. Growth, 309, 1–7, (2007) - Papier régulier⋄ Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates
Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau
Phys. Stat. Sol. (c), 4, n°7, 2670-2673, (2007) - Article de conférence⋄ AlGaN/GaN HEMTs on (001) silicon substrates
S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies
Electron. Lett., 42, 117-118, (2006) - Papier régulier⋄ In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler
J. Cryst. Growth, 301-302, 71-74, (2007) - Article de conférence⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE
Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
J. Cryst. Growth, 301-302, 434-436, (2007) - Article de conférence⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy
S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies
Superlattice Microst, 40, 295-299, (2006) - Article de conférence⋄ Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC
Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau
Superlattice Microst, (40), 359-362, (2006) - Article de conférence⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source
Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
Phys. Stat. Sol. (c), 3, N°6, 2325-2328, (2006) - Article de conférence⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates
Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie
Journal de Physique IV, 132, 365-368, (2006) - Article de conférence⋄ Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures
J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies
Proc. Material Research Society Spring Meeting, 864, 579-584, (2005) - Article de conférence⋄ Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy
R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A. Diforte-Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys., 30 (2), 77-82, (2005) - Papier régulier⋄ High temperature electrical investigations of (Al,Ga)N/GaN heterostructures - Hall sensor applications
C. Consejo, S. Contreras, L. Konczewiez, P. Lorenzini, Y. Cordier, C. Skierbiszewski, J.L. Robert
Phys. Stat. Sol. (c), (4), 1438-43, (2005) - Article de conférence⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie
Phys. Stat. Sol. (c), 2, No. 7, 2195-2198, (2005) - Article de conférence⋄ Electron mobility and transfer characteristics in AlGaN/GaN HEMTs
Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies
Phys. Stat. Sol. (c), 2, No. 7, 2720-2723, (2005) - Article de conférence⋄ High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy
S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies
Appl. Phys. Lett., 87, 133505, (2005) - Papier régulier⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy
S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c), 2, No. 7, 2187-2190, (2005) - Article de conférence⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1)
S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier
J. Cryst. Growth, 280, 44-53, (2005) - Papier régulier⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)
Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth, 278/1-4, 393-396, (2005) - Article de conférence⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie
J. Cryst. Growth, 278/1-4, 383-386, (2005) - Article de conférence⋄ Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors
R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A.D. Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys., 27(1-3), 293-6, (2004) - Papier régulier⋄ Thermal characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and an pulsed I-V measurements
R. Aubry, J.C. Jacquet, C. Dua, H. Gérard, B. Dessertenne, M.A. Di Forte-Poisson, Y. Cordier and S.L. Delage
Mat. Sci. For., 457-460, 1625-1628, (2004) - Article de conférence⋄ Low frequency noise behavior in GaN HEMT's on silicon substrate
L. Bary, E. Angeli, A. Rennane, G. Soubercaze-Pun, J.G. Tartarin, A. Minko, V. Hoel, Y. Cordier, C. Dua, R. Plana, J. Graffeuil
Proc. SPIE, 5470, 286-295, (2004) - Article de conférence⋄ Electronic properties of deep defects in n-type GaN
P. Muret, Ch. Ulzhöfer, J. Pernot, Y. Cordier, F. Semond, Ch. Gacquière, D. Théron
Superlattice Microst, 36, 435-443, (2004) - Article de conférence⋄ High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates
A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 25, No.4, 167-169, (2004) - Papier régulier⋄ 60-GHz high power performance In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMTs on GaAs
M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte and D. Théron
IEEE Electron Device Letters, 24 N°12, 724–726, (2003) - Papier régulier⋄ Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements
R. Aubry, J.C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.A. Diforte-Poisson, A. Romann, S.L. Delage
Eur. Phys. J. Appl. Phys., 22(2), 77-82, (2003) - Papier régulier⋄ High Pressure Study of the Electrical Transport Phenomena in AlGaN/GaN Heterostructures
Ch. Consejo, L. Konczewicz, S. Contreras, S. Lepkowsky, M. Zielinski, J.L. Robert, P. Lorenzini, Y. Cordier
Phys. Stat. Sol. (b), 235 (2), 232-237, (2003) - Article de conférence⋄ Power Results at 4GHz of AlGaN/GaN HEMTs on High Resistive Silicon (111) substrate
N. Vellas, C. Gaquière, A. Minko, V. Hoël, J.C. De Jaeger, Y. Cordier, and F. Semond
IEEE Microwave and Wireless Components Letters, 13, n°3, 99-101, (2003) - Papier régulier⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth, 251, Issues 1-4, 811-815, (2003) - Article de conférence⋄ Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
Y. Cordier, P. Lorenzini, J.M. Chauveau, D. Ferré, Y. Androussi, J. Dipersio, D. Vignaud, J.L.Codron
J. Cryst. Growth, 251, Issues 1-4, 822-826, (2003) - Article de conférence⋄ Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
J.M. Chauveau, Y. Cordier, H.J. Kim, D. Ferré, Y. Androussi and J. Di Persio
J. Cryst. Growth, 251, Issues 1-4, 112-117, (2003) - Article de conférence⋄ Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
J.M. Chauveau, Y. Androussi, A. Lefebvre, J. Di Persio, and Y. Cordier
J. Appl. Phys., 93, Issue 7, 4219-4225, (2003) - Papier régulier⋄ AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density
R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 39 (7), 626-628, (2003) - Papier régulier⋄ High power AlGaN/GaN HEMTs on resistive silicon substrate
V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 38, 750, (2002) - Papier régulier⋄ Fmax of 490 GHz metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate
S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, A. Cappy
Electron. Lett., 38 N°8, 389, (2002) - Papier régulier⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE
Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, S. Delage
Electron. Lett., 38(2), 91, (2002) - Papier régulier⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a), N°1, 61, (2002) - Article de conférence
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Partners: Distretto Technologico Sicilia Micro & NA, CRHEA, CEE, AEG, Aixtron,...⋄ ASGEIR (2022 - 2026)
Substrat compliants pour Epitaxie (ANR) - Projet National
Partners: CRHEA, LN2, GREMAN, GREYC⋄ ACTION (2022 - 2026)
Nouveaux transistors à canaux AlGaN (ANR) - Projet National
Partners: CNRS délégation régionale hauts de Seine, CNRS Délégation régionale des Alpes, EasyGaN⋄ VERTIGO (2022 - 2027)
PEPR électronique (PEPR) - Projet National
Partners:Old contracts
⋄ OptoTeraGaN (2015 - 2020)
Optoélectronique TeraHertz GaN (ANR) - Projet National
Partners: CRHEA,IEF-UPSUD,III-V lab⋄ GraNitE (2016 - 2019)
Graphene heterostrucutres with nitrides for high frequency electronics (FLAG-ERA) - Projet Européen
Partners: CNR-IMM, CRHEA, TopGaN, ST-Microelectronics⋄ Destinee (2016 - 2021)
Développement de composants innovants à base de GaN sur substrat de silicium pour la future génération de composants de puissance à haut rendement (ANR) - Projet National
Partners: IEMN, CRHEA, ESIEE, LAAS⋄ ED-GaN (2016 - 2021)
Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération (ANR) - Projet National
Partners: LN2, CRHEA, IEMN, IMS, OMMIC⋄ GoSiMP (2016 - 2020)
Optimisations combinées par l’épitaxie pour composants hyperfréquences de puissance GaN sur Silicium (ANR) - Projet National
Partners: CRHEA, IEMN, GREMAN⋄ Nems-GaN (2017 - 2022)
Nano Electro Mechanical Systems in Gallium Nitride materials (ANR) - Projet National
Partners: IEMN, Ecole Polytechnique PMC, CRHEA⋄ SchoGaN (2017 - 2021)
GaN Schottky diode for THz generation (ANR PRCE) - Projet National
Partners: IEMN, LERMA obs Paris, T-Waves Technologies, CRHEA⋄ Satellite (2012 - 2016)
Dévelopement d'un process basé sur le GaN sur substrat silicium pour des applications en ondes millimétriques (ANR) - Projet National
Partners: IEMN, CRHEA, OMNIC, BLUWAN, VECTRAWAVE⋄ FlexiGaN (2014 - 2017)
Composants sur supports FLEXIbles de la filière GaN (ANR) - Projet National
Partners: IEMN, CRHEA, 3M⋄ BREAkuP (2017 - 2021)
Matériaux à ultra large bande interdite pour les futurs applications d’électronique de puissance (ANR) - Projet National
Partners: IEMN, CRHEA, Institut Néel⋄ Amgasi (2012 - 2015)
Accéléromètre MEMS en thechnologie GaN en technologie Silicium (ANR) - Projet National
Partners: IEMN, FEMTO-ST, CRHEA⋄ StarGaN (2010 - 2013)
Etude de structure avancée de la filière nitrure de gallium (ANR) - Projet National
Partners: IEMN, CRHEA, Univ. Lille, OMMIC⋄ C-Pi-GaN (2019 - 2022)
Combination of Vertical and Horizontal GaN Transistors for Efficient Power Conversion Electronics (ANR) - Projet National
Partners: LN2, AMPERE, LAAS, LUMILOG, CRHEA⋄ Nano2022 (2019 - 2022)
Projet Nano 2022 (Convention Recherche Innovation/DGE - Soitec) - Projet National
Partners: CRHEA, DGE
Current supervisions
Florian Bartoli (Comment PhD Student) Thi Huong Ngo (Comment PhD Student) Old supervisions
Nadia El Bondry () (2020) Soumaya Latrach (PhD Student) (2018) Mario Khoury (PhD Student) (2018) Roy Dagher (PhD Student) (2017) Roxana Arvinte (PhD Student) (2016) Rémi Comyn (Comment PhD Student) (2016) Paul Leclaire (PhD Student) (2015) Guillaume Gommé (Fixed Term Contract) (2014) Tasnia Hossain (PhD Student) (2012) Martin Jouk (PhD Student) (2012) Nicolas Baron (PhD Student) (2009) Sylvain Joblot (PhD Student) (2007) Reda El Waradi (PhD Student) () Caroline Elias () () Thi Huong Ngo (Comment PhD Student) (2021) Rémi Comyn (Comment PhD Student) (2018) Florian Tendille (Comment PhD Student after CRHEA Phd) (2016) Reda El Waradi (Stagiaire) (2020) Wissam El Alouani (Stagiaire) (2016) Marion Albouy (Stagiaire) (2016) Soumaya Latrach (Stagiaire) (2015) Jad Mohdad (Stagiaire) (2014)
HDR
(Al,Ga)N/GaN heterostructures for electronics : from growth to devices
HDR defended on 3/10/2007.Post-doc
PhD
Curriculum
