Photo de Fabrice Semond
Name : Fabrice Semond
Status :
Grade : DR2
Team(s) : Opto   
: +33 4 93 95 7819

Activities


Short Biography :

During his doctoral dissertation, he studied the surfaces and interfaces of silicon carbide at the Saclay Atomic Energy Commission and his work had a major impact in the field with 3 articles published in Physical Review Letters. He then joined in 1997, as a permanent researcher, the CNRS / CRHEA in Valbonne, France. He was in charge of the development of a MBE growth reactor prototype dedicated to element III nitride epitaxy. In collaboration with RIBER, he helped develop a new generation of R & D MBE growth reactor which is now sold worldwide. His research interests lie in the growth of element III nitrides for electronic and optoelectronic components and he focuses mainly on their epitaxy and their integration on silicon substrates. He has had several important contributions in this field with, for example, the fabrication of GaN / AlN quantum dots on silicon, high mobility AlGaN / GaN heterostructures on Si (111) and Si (100) and he is a co-inventor of a patent with an exclusive license Picogiga / SOITEC for the fabrication of GaN-based transistors on silicon substrates. In recent years, his work has focused mainly on the fabrication of GaN-based micro-cavities for the observation of strong light-matter coupling and the production of microlasers. In 2007-2008, he was a Visiting Researcher in Canada at the Institute for Microstructural Sciences (Ottawa-NRC). He has been responsible and coordinator of several European and national projects. He is author and co-author of more than 170 publications and 5 patents.

Research activities

  • GaN nanophotonics on silicon (voir p. 46)
  • Strong light-matter coupling in GaN and ZnO (voir p. 44)
  • GaN HEMTs on silicon substrates (voir p. 28)
  • Integration of GaN with silicon technology (voir p. 30)
  • Strain engineering in GaN grown on silicon (voir p. 26)
  • Nitrides for nano-micro-resonators (voir p. 48)
  • UV Photodetectors based on AlGaN (voir p. 40)/li>

Publications (202)


⋄ Comparison of lasing characteristics of GaN microdisks with different structures

Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
J. Phys. D: Appl. Phys., 55,  355107, (2022) - Papier régulier

⋄ Low-loss GaN-on-insulator platform for integrated photonics

M. GROMOVYI, M. EL KURDI, X. CHECOURY, E. HERTH,F. TABATABA-VAKILI, N. BHAT, A. COURVILLE, F. SEMOND, AND P. BOUCAUD
Opt. Express, 30,  20737, (2022) - Papier régulier

⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks

Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
Opt. Lett., 47,  1521, (2022) - Papier régulier

⋄ Whispering-gallery mode InGaN microdisks on GaN substrates

H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi
Opt. Express, 29,  21280, (2021) - Papier régulier

⋄ Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy

M. Nemoz, F. Semond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche,J. Zúñiga-Pérez
Superlattices Microstruct., 150,  106801, (2021) - Papier régulier

⋄ Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

C. Brimont, L. Doyennette, G. Kreyder, F. Réveret, P. Disseix, F. Médard, J. Leymarie, E. Cambril, S. Bouchoule, M. Gromovyi, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, and T. Guillet
Phys. Rev. Applied, 14,  054060, (2020) - Papier régulier

⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers

F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 117,  121103, (2020) - Papier régulier

⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Opt. Lett., 45,  4276, (2020) - Papier régulier

⋄ Comment on “Adsorption of hydrogen and hydrocarbon molecules on SiC(001)”

E. Wimmer, E. Celasco, L. Vattuone, L. Savio, A. Tejeda, M. Silly, M. d'Angelo, F. Sirotti, M. Rocca, A. Catellani, G. Galli, L. Douillard, F. Semond, V.Yu. Aristov, P. Soukiassian
Surf Sci Lett, 644,  L170 - L171, (2016) - Papier régulier

⋄ Potentialities of GaN-based microcavities in strong coupling regime at room temperature

N. Ollier, F. Natali, D. Byrne, P. Disseix, A. Vasson, J. Leymarie, F. Semond, J. Massies
Superlattices Microstruct., 34,  599-606, (2004) - Papier régulier

⋄ Aluminum nitride photonic crystals and microdiscs for ultra-violet nanophotonics

D. Néel, I. Roland, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, S. Semond, P. Boucaud
Adv. Nat. Sci: Nanosci. Nanotechnol., 5,  023001, (2014) - Papier régulier

⋄ Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

I. Roland, Y. Zeng, Z. Han, X. Checoury, C. Blin, M. El Kurdi, A. Ghrib, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, P. Boucaud
Appl. Phys. Lett., 105,  11104, (2014) - Papier régulier

⋄ Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory

R. Bardoux, T.y Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77,  235315, (2008) - Papier régulier

⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud
Sci Rep., 9,  18095, (2019) - Papier régulier

⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits

F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud
Opt. Express, 27,  11800, (2019) - Papier régulier

⋄ Competition between horizontal and vertical polariton lasing in planar microcavities

O. Jamadi, F. Réveret, D. Solnyshkov, P. Disseix, J. Leymarie, L. Mallet-Dida, C. Brimont, T. Guillet, X. Lafosse, S. Bouchoule, F. Semond, M. Leroux, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. B, 99,  085304, (2019) - Papier régulier

⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE

S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond
Phys. Stat. Sol. A, 215,  1700640, (2018) - Papier régulier

⋄ Universal description of III-V/Si epitaxial growth processes

I. Lucci, S. Charbonnier, L. Pedesseau, M. Vallet, L. Cerutti, J.-B. Rodriguez, E. Tournié, R. Bernard, A. Létoublon, N. Bertru, A. Le Corre, S. Rennesson, F. Semond, G. Patriarche, L. Largeau, P. Turban, A. Ponchet, and C. Cornet
Phys. Rev. Materials, 2,  060401(R), (2018) - Papier régulier

⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin
IEEE FCS, 2011,  1-5, (2011) - Article de conférence

⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot
IEEE MEMS, 24th MEMS Int. Conf.,  581-584, (2011) - Article de conférence

⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon

F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud
ACS Photonics, 5,  3643, (2018) - Papier régulier

⋄ Proposition of a model elucidating the AlN-on-Si (111) microstructure

N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouvière, G. Feuillet, and P. Vennéguès
J. Appl. Phys., 123,  215701, (2018) - Papier régulier

⋄ Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs

H. Yacoub, T. Zweipfennig, H. Kalisch, A. Vescan, A. Dadgar, Matthias Wieneke, Jürgen Bläsing, A. Strittmatter, Stephanie Rennesson, and Fabrice Semond
Phys. Stat. Sol. A, 2018,  1700638, (2018) - Article de conférence

⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate

T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier
Phys. Stat. Sol. B, 255(5),  1700399, (2018) - Papier régulier

⋄ A combined growth process for state-of-the-art GaN on silicon

G. Gommé, E. Frayssinet, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4,  1600449, (2017) - Papier régulier

⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4,  1600450, (2017) - Papier régulier

⋄ Laser damage of free-standing nanometer membranes

Y. Morimoto, I. Roland, S. Rennesson, F. Semond, P. Boucaud and P. Baum
J. Appl. Phys., 122,  215303, (2017) - Papier régulier

⋄ Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

F. Tabataba-Vakili, I. Roland, T.-M.o Tran, X. ChecouryMoustafa El Kurdi,1 S. Sauvage, C. Brimont, T. Guillet, S. Rennesson, J.Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 111,  131103, (2017) - Papier régulier

⋄ Ion-induced interdiffusion of surface GaN quantum dots

C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig
Nuclear Instruments and Methods in Physics Research B, 409,  107, (2017) - Article de conférence

⋄ Efficient second harmonic generation in low-loss planar GaN waveguides

M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25,  23035-23044, (2017) - Papier régulier

⋄ Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system

T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, and R. Colombelli
Appl. Phys. Lett., 110,  131102, (2017) - Papier régulier

⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet
Appl. Phys. Lett., 109,  231101, (2016) - Papier régulier

⋄ Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks

I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury & P. Boucaud
Sci Rep., 6,  34191, (2016) - Papier régulier

⋄ Imaging of Photonic Crystal Localized Modes through Third-Harmonic Generation

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, and P. Boucaud
ACS Photonics, 3,  1240, (2016) - Papier régulier

⋄ Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators

I. Roland, Y. Zeng, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, M. Gromovyi, J. Y. Duboz, F. Semond, M. P. de Micheli, and P. Boucaud
Opt. Express, 24,  9602, (2016) - Papier régulier

⋄ Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zúñiga-Pérez
Phys. Rev. B, 93,  115205, (2016) - Papier régulier

⋄ Deep-UV nitride-on-silicon microdisk lasers

J. Sellés, C. Brimont, G. Cassabois, P. Valvin, T. Guillet, I. Roland, Y. Zeng, X. Checoury, P. Boucaud, M. Mexis, F. Semond & B. Gayral
Sci Rep., 6,  21650, (2016) - Papier régulier

⋄ Low loss GaN waveguides for visible light on Si Substrates

M. Gromovyi, F. Semond, J.Y. Duboz, G. Feuillet, M.P. De Micheli
J. Europ. Opt. Soc. Rap. Public., 9,  14050, (2014) - Papier régulier

⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate

B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A, 212,  2297–2301, (2015) - Papier régulier

⋄ Epitaxial challenges of GaN on silicon

F. Semond
MRS Bulletin, vol 40,  412-417, (2015) - Papier invité

⋄ Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, M. Mexis, F. Semond, and P. Boucaud
Appl. Phys. Lett., 106,  081105, (2015) - Papier régulier

⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films

F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404,  146-151, (2014) - Papier régulier

⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond
Appl. Phys. Lett., 104,  241113, (2014) - Papier régulier

⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate

T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier
Phys. Stat. Sol. C, 10,  425, (2012) - Article de conférence

⋄ Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons

J.H. Buss, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hagele
Appl. Phys. Lett., 103,  092401, (2013) - Papier régulier

⋄ Imaging of photonic modes in an AlN-based photonic crystal probed by an ultra-violet internal light source

C. Brimont, T. Guillet, S. Rousset, D. Néel, X. Checoury, S. David, P. Boucaud, D. Sam-Giao, B. Gayral, M. J. Rashid, and F. Semond
Optics Letters, 38,  5059, (2013) - Papier régulier

⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers

M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès
Semicond. Sci. Tech., 28,  035006, (2013) - Papier régulier

⋄ Role of magnetic polarons in ferromagnetic GdN

F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87,  035202, (2013) - Papier régulier

⋄ AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range

P.E. Malinowski, J.Y. Duboz, P. De Moor, J. John, K. Minoglou, P. Srivastava, F. Semond, E. Frayssinet, B. Giordanengo, A. BenMoussa, A. Gottwald, C. Laubis, R. Mertens, X. Van Hoof
Electron Dev. Lett., 32,  1561, (2011) - Papier régulier

⋄ Non-linear emission properties of ZnO microcavities

T. Guillet, C. Brimont, P. Valvin, B. Gil, T. Bretagnon, F. Medard, M. Mihailovic, J. Zúñiga-Pérez, F. Semond, S. Bouchoule
Phys. Stat. Sol. C, 9,  1225, (2012) - Article de conférence - invité

⋄ Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon

F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux
Superlattice Microst, 52,  541, (2012) - Papier régulier

⋄ Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

L.F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.C. Moreno, E. Frayssinet, and F. Semond
J. Appl. Phys., 111,  023511, (2012) - Papier régulier

⋄ Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates

M. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, F. Semond
Solid State Electronics, 75,  86-92, (2012) - Papier régulier

⋄ Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime

J.H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A.D. Wieck, and D. Hägele
Phys. Rev. B, 84,  153202, (2011) - Papier régulier

⋄ High quality factor photonicresonators for nitride quantum dots

T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil, D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud
Phys. Stat. Sol. B, 249,  449, (2012) - Papier régulier

⋄ High quality factor AlN nanocavities embedded in a photonic crystal waveguide

D. Sam-Giao, D. Néel, S. Sergent, B. Gayral, M.J. Rashid, F. Semond, J.Y. Duboz, M. Mexis, T. Guillet, C. Brimont, S. David, X. Checoury and P. Boucaud
Appl. Phys. Lett., 100,  191104, (2012) - Papier régulier

⋄ High quality factor of AlN microdisks embedding GaN quantum dot

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Phys. Stat. Sol. C, 8,  2328, (2011) - Article de conférence

⋄ LO-phonon-assisted polariton lasing in a ZnO-based microcavity

L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zúñiga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont and T. Guillet
Phys. Rev. B, 85,  121201, (2012) - Papier régulier

⋄ Fabrication and growth of GaN-based micro and nanostructures

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9,  412-427, (2012) - Papier invité

⋄ Hybrid cavity polaritons in a ZnO-perovskite microcavity

G. Lanty, S. Zhang, J.S. Lauret, E. Deleporte, P. Audebert, S. Bouchoule, X. Lafosse, J. Zúñiga-Pérez, F. Semond, D. Lagarde, F. Médard, and J. Leymarie
Phys. Rev. B, 84,  195449, (2011) - Papier régulier

⋄ Polariton lasing in a hybrid bulk ZnO microcavity

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 99,  161104, (2011) - Papier régulier

⋄ AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate

D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury, P. Boucaud
Appl. Phys. Lett., 98,  261106, (2011) - Papier régulier

⋄ Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime

L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont and T. Guillet
Appl. Phys. Express, 4,  072001, (2011) - Papier régulier

⋄ Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

P.E. Malinowski, J.Y. Duboz, P. De Moor, K. Minoglou, J. John, S. Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, and C. Van Hoof
Appl. Phys. Lett., 98,  141104, (2011) - Papier régulier

⋄ High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Optics Letters, 36,  2203-2205, (2011) - Papier régulier

⋄ Laser emission with excitonic gain in a ZnO planar microcavity

T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 98,   211105 , (2011) - Papier régulier

⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties

S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109,  053514, (2011) - Papier régulier

⋄ Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, L. Hirsch
J. Cryst. Growth, 312,  3583, (2010) - Papier régulier

⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth, 312 - n° 19,  2683-2688 , (2010) - Papier régulier

⋄ Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities

F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J.C. Moreno, F. Semond, M. Leroux, and S. Bouchoule
J. Appl. Phys., 108,  043508, (2010) - Papier régulier

⋄ Room temperature Strong coupling in low finesse GaN microcavities

I.R. Sellers, F. Semond, M. Leroux, et al.
MRS symposium, 892,  485-490, (2006) - Article de conférence

⋄ Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond et al.
Superlattice Microst, 41,  414-418, (2007) - Article de conférence

⋄ From evidence of strong light-matter coupling to polariton emission in GaN microcavities

I.R Sellers, F. Semond, M. Zamfirescu et al.
Phys. Stat. Sol. B, 244,  1882-1886, (2007) - Article de conférence

⋄ Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots: Role of the electron-hole dipole

R. Bardoux, T. Guillet, P. Lefebvre, F. Semond et al.
Physics of semiconductors, B893,  941-942, (2007) - Article de conférence

⋄ Dry etching of N-face GaN using two high-density plasma etch techniques

F. Rizzi, K. Bejtka, F. Semond et al.
Phys. Stat. Sol. C, 4,  200-203, (2008) - Article de conférence

⋄ Strong coupling in bulk GaN microcavities grown on silicon

F. Reveret, I.R. Sellers, P. Disseix, F. Semond et al.
Phys. Stat. Sol. C, 4,  108-111, (2008) - Article de conférence

⋄ AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV)

J. John, P. Malinowski, P. Aparicio, J.Y. Duboz, F. Semond et al.
Optical sensing technology and applications, 6585,  33-40, (2007) - Article de conférence

⋄ Temperature dependence of the polariton relaxation bottleneck in a GaN microcavity

F. Stokker-Cheregi, A. Vinattieri, M. Colocci, F. Semond et al.
Phys. Stat. Sol. C, 5,  2257, (2008) - Article de conférence

⋄ Molecular Beam Epitaxy of AlN Layers on Si (111)

J.C. Moreno, E. Frayssinet, F. Semond et al.
MRS symposium proceeding, 1068,  141-145, (2008) - Article de conférence

⋄ Strong light-matter coupling in GaN-based microcavities grown on silicon substrates

F. Semond, I.R. Sellers, N. Ollier et al.
MRS proceedings, 1068,  95-100, (2008) - Article de conférence

⋄ Optical investigations of bulk and multi-quantum well nitride-based microcavities

F. Reveret, F. Medard, P. Disseix, F. Semond et al.
Optical Materials, 31,  505, (2009) - Article de conférence

⋄ Epitaxial aluminium nitride on patterned silicon

J. Moreno, E. Frayssinet, F. Semond et al.
Materials Science in Semicond. Processing, 12,  31, (2009) - Article de conférence

⋄ Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms

F. Reveret, P. Disseix, J. Leymarie, F. Semond F et al.
Solid State Com., 150,  122, (2009) - Papier régulier

⋄ Interfacial properties of AlN and oxidized AlN on Si

M. Placidi, A. Perez-Tomas, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi and J. Millán.
surface science, 604,  63, (2009) - Papier régulier

⋄ Monolithic integration of AlGaN/GaN HFET with MOS on silicon < 111 > substrates

P.N. Chyurlia, F. Semond , T. Lester , J.A. Bardwell et al
Electron. Lett., 46,  240, (2010) - Papier régulier

⋄ Temperature dependence of electron spin relaxation in bulk GaN

J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Phys. Rev. B, 81,  155216, (2010) - Papier régulier

⋄ Photoluminescence of single GaN/AlN quantum dots on Si(111): spectral diffusion effects

R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, F. Semond
Phys. Rev. B, 74,  195319, (2006) - Papier régulier

⋄ Influence of the mirrors in the strong coupling regime in planar GaN microcavities

F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies
Phys. Rev. B, 77,  195303, (2008) - Papier régulier

⋄ Polarized emission from GaN/AlN quantum dots: single-dot spectroscopy and symmetry-based theory

R. Bardoux, T. Guillet, B. Gil, P. Levebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77,  235315, (2008) - Papier régulier

⋄ Anisotropic electron spin relaxation in bulk GaN

J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Appl. Phys. Lett., 95,  192107, (2009) - Papier régulier

⋄ Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with Silicon microelectronics

S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang
J. Cryst. Growth, 311,  2087-2090, (2008) - Article de conférence

⋄ Mechanisms of ammonia-MBE growth of GaN on SiC for transport devices

H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau
J. Cryst. Growth, 311,  2091-2095, (2008) - Article de conférence

⋄ Highly sensitive strained AlN on Si(111) resonators

M. Placidi, J.C. Moreno, P. Godignon, N. Mestres, E. Frayssinet, F. Semond, C. Serre
Sensors and Actuators A: Physical, 150,  64-68, (2008) - Papier régulier

⋄ AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, J.C. De Jaeger, C. Gaquière, Y. Cordier, and F. Semond
IEEE Trans. Electron Devices, 57,  1497-1503, (2010) - Papier régulier

⋄ Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary
Materials Science in Semiconductor Processing, 12,  16-20, (2009) - Article de conférence

⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2,  715-718, (2009) - Article de conférence

⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C, 6 - S2,  1020-1023, (2009) - Article de conférence

⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068,  51-56, (2008) - Article de conférence

⋄ AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication

S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies
European Microwave Integrated Circuits Conference, 2007,  96-99, (2007) - Article de conférence

⋄ Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration

P. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J.C. Moreno, and N.G. Tarr
Phys. Stat. Sol. A, 206,  371-374, (2009) - Papier régulier

⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105,  033701, (2009) - Papier régulier

⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311,  2002-2005, (2009) - Article de conférence

⋄ Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka, F. Réveret, R.W. Martin, P.R. Edwards, A. Vasson, J. Leymarie, I. Sellers, J.Y. Duboz, M. Leroux, and F. Semond
Appl. Phys. Lett., 92,  241105, (2008) - Papier régulier

⋄ Backside illuminated GaN on Si Schottky photodiode for UV radiation detection

P.E. Malinowski, J. John, J.Y. Duboz, A. Lorenz, J.G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J.F. Hochedez and B. Giordaneng
Electron Dev. Lett., 30,  1308, (2009) - Papier régulier

⋄ First demonstration and performance of AlGaN based focal plane array for deep-UV imaging

J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir
SPIE procedings, 7474,  74741G, (2009) - Article de conférence

⋄ GaN quantum dots in (Al,Ga)N-based Microdisks

S. Sergent, J.C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, B. Gayral, D. Néel, S. David, P. Boucaud, M. Leroux, F. Semond
J. Phys.: Conf. Ser., 210,  012005, (2010) - Article de conférence

⋄ Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results

F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, J. Leymarie, M. Mihailovic, D.D. Solnyshkov, G. Malpuech, E. Frayssinet, S. Sergent, F. Semond, M. Leroux, S. Bouchoule
J. Phys.: Conf. Ser., 210,  012026, (2010) - Article de conférence

⋄ Molecular beam epitaxy of group-III nitrides on silicon substrates : growth, properties and devices applications

F. Semond, Y. Cordier, N. Grandjean et al.
Phys. Stat. Sol. (a), 188 (2),  501-510, (2001) - Article de conférence - invité

⋄ Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 95,  121102, (2009) - Papier régulier

⋄ Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities

F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux
Photonics and Nanostructures, 7,  26, (2009) - Article de conférence

⋄ GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures

S. Sergent, J.C. Moreno, E. Frayssinet, S. Chenot, M. Leroux, and F. Semond
Applied Physics Express, 2,  051003, (2009) - Papier régulier

⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?

A. Le Louarn, S. Vézian, F. Semond and J. Massies
J. Cryst. Growth, 311,  3278, (2009) - Papier régulier

⋄ Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption

F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet
Phys. Rev. B, 79,  125302, (2009) - Papier régulier

⋄ Optical and excitonic properties of ZnO films

M. Mihailovic, A. L. Henneghien, S. Faure, P. Disseix, J. Leymarie, A. Vasson, D. A. Buell, F. Semond, C. Morhain, and J. Zúñiga-Pérez
Optical Matérials, 31,  532, (2009) - Article de conférence

⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1,  121101, (2008) - Papier régulier

⋄ AlGaN photodetectors for applications in the extreme UV range

P. Malinowski, J. John, A. Lorrenz, P.A. Alonso, M. Germain, J. Derluyn, K. Cheng, G. Borghs, R. Mertens, J.Y. Duboz, F. Semond, U. Kroth, M. Richter, J.F. Hochedez, A. Ben Moussa
Proc. SPIE, 7003,  , (2008) - Article de conférence

⋄ Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

T.D. Veal, P.D.C. King, S.A. Hatfield, L.R. Bailey, C.F. McConville, B. Martel, J.C. Moreno, E. Frayssinet, F. Semond, and J. Zúñiga-Pérez
Appl. Phys. Lett., 93,  202108, (2008) - Papier régulier

⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond
IEEE Electron Device Letters, 29,  1187-1189, (2008) - Papier régulier

⋄ Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities

K. Bejtka, F. Rizzi, P. R. Edwards, R.W. Martin, E. Gu, M.D. Dawson, I.M. Watson, I.R. Sellers, F. Semond
Phys. Stat. Sol. (a), 202,  2648, (2005) - Papier régulier

⋄ (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, X.N. Kang, G.Y. Zhang, E. Gu, M.D. Dawson, I.M. Watson, and R.W. Martin
Appl. Phys. Lett., 90,  111112, (2007) - Papier régulier

⋄ Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities

K. Bejtka, P.R. Edwards, R.W. Martin, F. Reveret, A. Vasson, J. Leymarie, I.R. Sellers, M. Leroux, and F. Semond
Semicond. Sci. Tech., 8,  045008, (2008) - Papier régulier

⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime

F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies
Superlattice Microst, 41,  376, (2007) - Article de conférence

⋄ Polariton emission in GaN microcavities

M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies
Superlattice Microst, 41,  284, (2007) - Article de conférence

⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities

F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli
Appl. Phys. Lett., 92,  042119, (2008) - Papier régulier

⋄ AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

S. Boulay, S. Touati, A.A. Sar, V. Hoel, C. Gaquière, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, and J. Massies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, No. 11,  2843-2848, (2007) - Papier régulier

⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature

I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa
Phys. Rev. B, 74,  193308, (2006) - Papier régulier

⋄ Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau
Phys. Stat. Sol. (c), 4, n°7,  2670-2673, (2007) - Article de conférence

⋄ AlGaN/GaN HEMTs on (001) silicon substrates

S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies
Electron. Lett., 42,  117-118, (2006) - Papier régulier

⋄ In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy

Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler
J. Cryst. Growth, 301-302,  71-74, (2007) - Article de conférence

⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE

Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
J. Cryst. Growth, 301-302,  434-436, (2007) - Article de conférence

⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies
Superlattice Microst, 40,  295-299, (2006) - Article de conférence

⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11),  113304-1-4, (2006) - Papier régulier

⋄ investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

M. Benaissa, P. Vennéguès, O. Tottereau, L. Nguyen and F. Semond
Appl. Phys. Lett., 89,  231903, (2006) - Papier régulier

⋄ Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature

I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson
Phys. Stat. Sol. (b), 243(7),  1639, (2006) - Article de conférence

⋄ Strong coupling of light with A and B excitons in GaN microcavities grown on silicon

I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson
Phys. Rev. B, 73,  033304, (2006) - Papier régulier

⋄ Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau
Superlattice Microst, (40),  359-362, (2006) - Article de conférence

⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
Phys. Stat. Sol. (c), 3, N°6,  2325-2328, (2006) - Article de conférence

⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie
Journal de Physique IV, 132,  365-368, (2006) - Article de conférence

⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells

F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71,  75311, (2005) - Papier régulier

⋄ Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures

J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies
Proc. Material Research Society Spring Meeting, 864,   579-584, (2005) - Article de conférence

⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon

F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson
Appl. Phys. Lett., 87,  021102, (2005) - Papier régulier

⋄ Spectroscopy of a bulk GaN microcavity grown on Si(111)

N. Ollier, F. Natali, D. Byrne, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond Et J. Massies
Jpn. J. Appl. Phys, 44,  4902, (2005) - Papier régulier

⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie
Phys. Stat. Sol. (c), 2, No. 7,  2195-2198, (2005) - Article de conférence

⋄ Electron mobility and transfer characteristics in AlGaN/GaN HEMTs

Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies
Phys. Stat. Sol. (c), 2, No. 7,  2720-2723, (2005) - Article de conférence

⋄ High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy

S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies
Appl. Phys. Lett., 87,  133505, (2005) - Papier régulier

⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c), 2, No. 7,  2187-2190, (2005) - Article de conférence

⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth, 278/1-4,  393-396, (2005) - Article de conférence

⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie
J. Cryst. Growth, 278/1-4,  383-386, (2005) - Article de conférence

⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature

F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie
Mater. Res. Soc. Symp. Proc., 798,  613-18, (2004) - Article de conférence

⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy

F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies
Sol. Stat. Comm., 132,  679, (2004) - Papier régulier

⋄ Phonon deformation potential in hexagonal GaN

F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,  155215, (2004) - Papier régulier

⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy

M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36,  659, (2004) - Article de conférence

⋄ Electronic structure of wurtzite and zinc-blende AlN

P. Jonnard, N. Capron, F. Semond, J. Massies, E. Martinez-Guerrero, H. Mariette
Eur. Phys. J. B, 42,  351, (2004) - Papier régulier

⋄ Electronic properties of deep defects in n-type GaN

P. Muret, Ch. Ulzhöfer, J. Pernot, Y. Cordier, F. Semond, Ch. Gacquière, D. Théron
Superlattice Microst, 36,  435-443, (2004) - Article de conférence

⋄ High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates

A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 25, No.4,  167-169, (2004) - Papier régulier

⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride

S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science, 234,  445, (2004) - Article de conférence

⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,  125329, (2004) - Papier régulier

⋄ Cubic SiC surface structure studied by X-ray diffraction

M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond, L. Di-Cioccio, T. Billion
Mat. Sci. For., 433-436,  571-4, (2003) - Article de conférence

⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters

D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies
Conference on Lasers and Electro-Optics Europe, 03TH8666,  178, (2003) - Article de conférence

⋄ Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments

A. Reale, G. Massari, A. Di-Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, J. Massies
J. Appl. Phys., 93(1),  400-9, (2003) - Papier régulier

⋄ Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction

H. Enriquez, M. D'angelo, V.Yu. Aristov, V. Derycke, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond
J. Vac. Sci. Technol. B, 21(4),  1881-5, (2003) - Papier régulier

⋄ Atomic structure determination of the Si-rich beta -SiC(001) 3*2 surface by grazing-incidence x-ray diffraction: a stress-driven reconstruction

M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, M. Noblet, S. Chiang, F. Semond
Phys. Rev. B, 68(16),  165321-1-8, (2003) - Papier régulier

⋄ Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies
J. Appl. Phys., 93(9),  5222-5226, (2003) - Papier régulier

⋄ Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities

N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies
Phys. Stat. Sol. (a), 195, No.3,  543-550, (2003) - Article de conférence

⋄ RBS studies of AlGaN/AlN Bragg reflectors

L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie
Phys. Stat. Sol. (a), 195, No.3,  502-507, (2003) - Article de conférence

⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont
Appl. Phys. Lett., 82(9),  1386, (2003) - Papier régulier

⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon

J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy
Jpn. J. Appl. Phys, 42,  118, (2003) - Papier régulier

⋄ Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

R. Aubry, J.C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.A. Diforte-Poisson, A. Romann, S.L. Delage
Eur. Phys. J. Appl. Phys., 22(2),  77-82, (2003) - Papier régulier

⋄ Residual donors in wurtzite GaN homoepitaxial layers and heterostructures

G. Neu, M. Teisseire-Doninelli, C. Morhain, F. Semond, N. Grandjean, B. Beaumont, E. Frayssinet, W. Knap, A. M. Witowski, M. L. Sadowski, M. Leszczynski, P. Prystawko
Phys. Stat. Sol. (b), 235,  20, (2002) - Article de conférence

⋄ UV metal semiconductor metal detectors

J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès, F. Semond, J.Y. Duboz, L. Hirsch
Proc. of NATO Conference, ,  , (2003) - Article de conférence

⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys., 94,  6499, (2003) - Papier régulier

⋄ Origins of GaN(0001) Surface Reconstructions

S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
Surf. Sci., 541,  242, (2003) - Papier régulier

⋄ Power Results at 4GHz of AlGaN/GaN HEMTs on High Resistive Silicon (111) substrate

N. Vellas, C. Gaquière, A. Minko, V. Hoël, J.C. De Jaeger, Y. Cordier, and F. Semond
IEEE Microwave and Wireless Components Letters, 13, n°3,  99-101, (2003) - Papier régulier

⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth, 251, Issues 1-4,  811-815, (2003) - Article de conférence

⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies
Phys. Rev. B, 68(15),  153313, (2003) - Papier régulier

⋄ AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density

R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 39 (7),  626-628, (2003) - Papier régulier

⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111)

F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie
Jpn. J. Appl. Phys, 41(10B),  L1140-2, (2002) - Papier régulier

⋄ High linearity performances of GaN HEMT devices on silicon substrate at GHz

N. Vellas, C. Caquiere, Y. Guhel, M. Werquin, F. Bue, R. Aubry, S. Delage, F. Semond, J.C. De Jaeger
IEEE Electron Device Letters, 23(8),  461, (2002) - Papier régulier

⋄ High power AlGaN/GaN HEMTs on resistive silicon substrate

V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 38,  750, (2002) - Papier régulier

⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation

J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 92,  5602, (2002) - Papier régulier

⋄ Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells

J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,  155, (2002) - Article de conférence

⋄ Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells

A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,  87, (2002) - Article de conférence

⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector

L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 91,  6095, (2002) - Papier régulier

⋄ Modelling and spectroscopy of GaN microcavities

N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 190,  187, (2002) - Article de conférence

⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon

M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart
Phys. Stat. Sol. (b), 234,  887, (2002) -

⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, S. Delage
Electron. Lett., 38(2),  91, (2002) - Papier régulier

⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a), N°1,  61, (2002) - Article de conférence

⋄ Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields

D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,  851, (2001) - …

⋄ Potentialities of GaN-based microcanivities grown on silicon substrates

N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 188,  519, (2001) - …

⋄ Micro-Raman study of wurtzite AlN layers grown on Si(111)

J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, F. Semond, J. Massies
Phys. Stat. Sol. (a), 188,  511, (2001) - …

⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si

J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,  325, (2001) - …

⋄ Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy

P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Microscopy, 202,  212, (2001) - …

⋄ Dielectric microcavity in GaN/Si

J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean
Phys. Stat. Sol. (a), 183,  35, (2001) - …

⋄ Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

G. Neu, M. Teisseire, P. Lemasson, H. Lahrèche, N. Grandjean, F. Semond, B. Beaumont, I. Grzegory, S. Porowski, R. Triboulet
Physica B, 302-303,  39, (2001) - …

⋄ Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices

F. Semond, H.P.D. Schenk, P. Gibart, S. Camou, T. Pastureaud, A. Soufyane, and S. Ballandras
Ann. Chim. Sci. Mater., 26,  177, (2001) - Article de conférence

⋄ High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy

F. Semond, P. Lorenzini, N. Grandjean, J. Massies
Appl. Phys. Lett., 82,  335, (2001) - Papier régulier

⋄ Surface morphology of GaN grown by molecular beam epitaxy

S. Vézian, J. Massies, F. Semond, N. Grandjean
Mat. Sci. Eng. B, 82,  56, (2001) - …

⋄ Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111)

F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 183,  163, (2001) - …

⋄ AlN and GaN layers deposited on sapphire or silicon substrates: Theory and experiment

T. Pastureaud, A. Soufyane, S. Camou, S. Ballandras, H.P.D. Schenk, F. Semond, J. Desbois, and V. Laude
Proc. IEEE Ultrason. Symp., 1,  293-297, (2000) - Article de conférence

⋄ From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization

M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies
Mat. Sci. For., 353-356,  795, (2001) - …

⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)

S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès
Phys. Rev. B, 61,  7618, (2000) - Papier régulier

⋄ GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range

B. Damilano, N. Grandjean, J. Massies, F. Semond
Applied Surface Science, 164,  241, (2000) - …

Current contracts


⋄ NIOBIUM (2021 - 2025)

Hétérojonctions nitrure de niobium/nitrure d’élément III par épitaxie par jets moléculaires : première démonstration d’un transistor à base métallique (ANR PRCE) - Projet National
Partners: III-VLab, CIMAP, CRHEA

Old contracts


⋄ Quanonic (2014 - 2017)

QUAntum and Nonlinear Optics in NItride Cavities (ANR) - Projet National
Partners: CRHEA, Inac/SP2M, L2C,PSUD/IEF

⋄ Antipode (2014 - 2018)

Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés (ANR) - Projet National
Partners: CEMES, CRHEA, FOTON, IES, IPR, LPN

⋄ MilaGaN (2017 - 2021)

Laser µdisque électrique (ANR) - Projet National
Partners: IEF, L2C, INAC, Hong Kong

⋄ EasyGaN (2013 - 2015)

Substrat avancé epiready sur silicium pour la fabrication de GaN faible épaisseur et basse densité de dislocations (ANR) - Projet National
Partners: CRHEA

⋄ Sinphoni (2009 - 2011)

Fabrication de résonateurs optiques à fort facteur de qualité avec des matériaux nitrures d’éléments III épitaxiés sur substrat silicium : Microlasers dans la gamme visible-UV intégré sur silicium (ANR) - Projet National
Partners: C2N, L2C, INAC, CRHEA

Current supervisions


Elodie Carneiro (PhD Student)
Antoine Pedeches (PhD Student)
Sebastian Tamariz (Comment PhD Student)
Sebastian Tamariz (Comment PhD Student)

Old supervisions


Mohammad Junaebur Rashid (PhD Student) (2012)
Jean-Christophe Moreno (PhD Student) (2009)
Meletios Mexis (Comment PhD Student) (2015)
Meletios Mexis (Comment PhD Student) (2013)
Lars Kappei (Comment PhD Student) (2013)
Eric Boiteau (Stagiaire) (2018)
Raphaël Di Piazza (Stagiaire) (2016)

Post-doc


PhD


Curriculum