The OPTO-electronic team studies the optical and optoelectronic properties of materials based on gallium nitride (GaN) and zinc oxide (ZnO), which are developed by epitaxial growth techniques using vapor phase epitaxy (VPE) and / or molecular beam epitaxy (MBE), and develops them in devices (LEDs, lasers, detectors ...) for potential applications. In particular, based on the specificities of these growth techniques and the know-how developed for these two families of materials, the possibility of coupling (VPE-MBE and / or GaN-ZnO) is an exceptional asset of CRHEA. The main activities developed concern:
- the production of semipolar GaN layers for applications in interband (LED) and intersubband (photodetectors, detectors and quantum cascade lasers) applications.
- the development of long-wavelength (yellow and red) emitting nitride devices and monolithic white light-emitting diodes.
- the development of UV LEDs based on AlGaN quantum dots.
- the heteroepitaxy of GaN on Si and the realization of ultra-thin heterostructures (< 500 nm) for the fabrication of micro-nano-components (microdisks, photonic crystals, etc.).
- the homoepitaxy of ZnO and its ZnMgO / ZnO heterostructures for the realization of unipolar devices (photodetectors, detectors and quantum cascade lasers).
- the development of LED components in the GaN / Si (stress engineering, large structured (8 inches)).
- non linear optics based on AlGaN materials (waveguides, photonic crystals, modal phase matching…) for UV applications.
- For any question about the Opto team: Julien Brault