Photo de Fabrice Semond
Nom : Fabrice Semond
Statut : Chercheur
Grade : DR2
Équipe(s) : Opto   
: +33 4 93 95 7819
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Courte Biographie


Au cours de sa thèse de doctorat, il a étudié les surfaces et interfaces de carbure de silicium au Commissariat à l'Energie Atomique de Saclay et son travail a eu un impact majeur dans le domaine avec 3 articles publiés dans Physical Review Letters. Il a ensuite rejoint en 1997, en tant que chercheur permanent, le CNRS/CRHEA à Valbonne, France. Il a été en charge du développement d'un prototype de réacteur de croissance MBE dédié à l'épitaxie des nitrures d'éléments III. En collaboration avec RIBER, il a contribué à développer une nouvelle génération de réacteur de croissance MBE de R&D qui est aujourd'hui vendue dans le monde entier. Ses centres d'intérêts en recherche portent sur la croissance des nitrures d'éléments III pour des composants électroniques et optoélectroniques et il se concentre principalement sur leur épitaxie et leur intégration sur des substrats de silicium. Il a eu plusieurs contributions importantes dans ce domaine avec par exemple la fabrication de boîtes quantiques GaN/AlN sur silicium, d'hétérostructures AlGaN/GaN à haute mobilité sur Si(111) et Si(100) et il est co-inventeur d'un brevet avec une licence exclusive Picogiga/SOITEC pour la fabrication de transistors à base de GaN sur des substrats de silicium. Au cours des dernières années, son travail a été principalement axé sur la fabrication de micro-cavités à base de GaN pour l'observation du couplage fort lumière-matière et la réalisation de microlasers. En 2007-2008, il a eu une position de chercheur invité au Canada à l'Institut des Sciences des Microstructures (Ottawa-CNRC). Il a était responsable et coordinateur de plusieurs projets européens et nationaux. Il est auteur et co-auteur de plus de 170 publications et 5 brevets.

Activités de recherche


  • GaN nanophotonics on silicon (voir p. 46) (document en anglais)
  • Strong light-matter coupling in GaN and ZnO (voir p. 44) (document en anglais)
  • GaN HEMTs on silicon substrates (voir p. 28) (document en anglais)
  • Integration of GaN with silicon technology (voir p. 30) (document en anglais)
  • Strain engineering in GaN grown on silicon (voir p. 26) (document en anglais)
  • Nitrides for nano-micro-resonators (voir p. 48) (document en anglais)
  • UV Photodetectors based on AlGaN (voir p. 40) (document en anglais)

Publications (209)


⋄ NbN thin films grown on silicon by molecular beam epitaxy for superconducting detectors

A. Iovan, A. Pedeches, T. Descamps, H. Rotella, I. Florea, F. Semond, and V. Zwiller
Appl. Phys. Lett., 123,  252602, (2023) - Papier régulier

⋄ High Al-content AlGaN channel high electron mobility transistors on silicon substrate

J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, and F. Medjdoub
Advances in Electrical Engineering, Electronics and Energy, 3,  100114, (2023) - Papier régulier

⋄ Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate

Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond and Farid Medjdoub
Electronics, 12,  2974, (2023) - Papier régulier

⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès
Crystals, 12,  1605, (2022) - Papier régulier

⋄ On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson, F. Semond, G. Feuillet, and C. Cornet
J. Appl. Phys., 132,  165102, (2022) - Papier régulier

⋄ Comparison of lasing characteristics of GaN microdisks with different structures

Hui Zi, Wai Yuen Fu, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond and Hoi Wai Choi,
J. Phys. D: Appl. Phys., 55,  355107, (2022) - Papier régulier

⋄ Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser

H. Souissi, M. Gromovyi, T. Gueye, C. Brimont, L. Doyennette, D.D Solnyshkov, G. Malpuech, E. Cambril, S. Bouchoule, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, and T. Guillet
Phys. Rev. Applied, 18,  044029, (2022) - Papier régulier

⋄ Comparison of lasing characteristics of GaN microdisks with different structures

Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
J. Phys. D: Appl. Phys., 55,  355107, (2022) - Papier régulier

⋄ Low-loss GaN-on-insulator platform for integrated photonics

M. GROMOVYI, M. EL KURDI, X. CHECOURY, E. HERTH,F. TABATABA-VAKILI, N. BHAT, A. COURVILLE, F. SEMOND, AND P. BOUCAUD
Opt. Express, 30,  20737, (2022) - Papier régulier

⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks

Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
Opt. Lett., 47,  1521, (2022) - Papier régulier

⋄ Whispering-gallery mode InGaN microdisks on GaN substrates

H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi
Opt. Express, 29,  21280, (2021) - Papier régulier

⋄ Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy

M. Nemoz, F. Semond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche,J. Zúñiga-Pérez
Superlattices Microstruct., 150,  106801, (2021) - Papier régulier

⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers

F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 117,  121103, (2020) - Papier régulier

⋄ Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

C. Brimont, L. Doyennette, G. Kreyder, F. Réveret, P. Disseix, F. Médard, J. Leymarie, E. Cambril, S. Bouchoule, M. Gromovyi, B. Alloing, S. Rennesson, F. Semond, J. Zúñiga-Pérez, and T. Guillet
Phys. Rev. Applied, 14,  054060, (2020) - Papier régulier

⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Opt. Lett., 45,  4276, (2020) - Papier régulier

⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud
Sci Rep., 9,  18095, (2019) - Papier régulier

⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits

F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud
Opt. Express, 27,  11800, (2019) - Papier régulier

⋄ Competition between horizontal and vertical polariton lasing in planar microcavities

O. Jamadi, F. Réveret, D. Solnyshkov, P. Disseix, J. Leymarie, L. Mallet-Dida, C. Brimont, T. Guillet, X. Lafosse, S. Bouchoule, F. Semond, M. Leroux, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. B, 99,  085304, (2019) - Papier régulier

⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE

S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond
Phys. Stat. Sol. A, 215,  1700640, (2018) - Papier régulier

⋄ Universal description of III-V/Si epitaxial growth processes

I. Lucci, S. Charbonnier, L. Pedesseau, M. Vallet, L. Cerutti, J.-B. Rodriguez, E. Tournié, R. Bernard, A. Létoublon, N. Bertru, A. Le Corre, S. Rennesson, F. Semond, G. Patriarche, L. Largeau, P. Turban, A. Ponchet, and C. Cornet
Phys. Rev. Materials, 2,  060401(R), (2018) - Papier régulier

⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon

F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud
ACS Photonics, 5,  3643, (2018) - Papier régulier

⋄ Proposition of a model elucidating the AlN-on-Si (111) microstructure

N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouvière, G. Feuillet, and P. Vennéguès
J. Appl. Phys., 123,  215701, (2018) - Papier régulier

⋄ Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs

H. Yacoub, T. Zweipfennig, H. Kalisch, A. Vescan, A. Dadgar, Matthias Wieneke, Jürgen Bläsing, A. Strittmatter, Stephanie Rennesson, and Fabrice Semond
Phys. Stat. Sol. A, 2018,  1700638, (2018) - Article de conférence

⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate

T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier
Phys. Stat. Sol. B, 255(5),  1700399, (2018) - Papier régulier

⋄ Ion-induced interdiffusion of surface GaN quantum dots

C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig
Nuclear Instruments and Methods in Physics Research B, 409,  107, (2017) - Article de conférence

⋄ Laser damage of free-standing nanometer membranes

Y. Morimoto, I. Roland, S. Rennesson, F. Semond, P. Boucaud and P. Baum
J. Appl. Phys., 122,  215303, (2017) - Papier régulier

⋄ Efficient second harmonic generation in low-loss planar GaN waveguides

M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25,  23035-23044, (2017) - Papier régulier

⋄ Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

F. Tabataba-Vakili, I. Roland, T.-M.o Tran, X. ChecouryMoustafa El Kurdi,1 S. Sauvage, C. Brimont, T. Guillet, S. Rennesson, J.Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 111,  131103, (2017) - Papier régulier

⋄ A combined growth process for state-of-the-art GaN on silicon

G. Gommé, E. Frayssinet, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4,  1600449, (2017) - Papier régulier

⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4,  1600450, (2017) - Papier régulier

⋄ Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system

T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, and R. Colombelli
Appl. Phys. Lett., 110,  131102, (2017) - Papier régulier

⋄ Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators

I. Roland, Y. Zeng, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, M. Gromovyi, J. Y. Duboz, F. Semond, M. P. de Micheli, and P. Boucaud
Opt. Express, 24,  9602, (2016) - Papier régulier

⋄ Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zúñiga-Pérez
Phys. Rev. B, 93,  115205, (2016) - Papier régulier

⋄ Imaging of Photonic Crystal Localized Modes through Third-Harmonic Generation

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, and P. Boucaud
ACS Photonics, 3,  1240, (2016) - Papier régulier

⋄ Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks

I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury & P. Boucaud
Sci Rep., 6,  34191, (2016) - Papier régulier

⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet
Appl. Phys. Lett., 109,  231101, (2016) - Papier régulier

⋄ Comment on “Adsorption of hydrogen and hydrocarbon molecules on SiC(001)”

E. Wimmer, E. Celasco, L. Vattuone, L. Savio, A. Tejeda, M. Silly, M. d'Angelo, F. Sirotti, M. Rocca, A. Catellani, G. Galli, L. Douillard, F. Semond, V.Yu. Aristov, P. Soukiassian
Surf Sci Lett, 644,  L170 - L171, (2016) - Papier régulier

⋄ Deep-UV nitride-on-silicon microdisk lasers

J. Sellés, C. Brimont, G. Cassabois, P. Valvin, T. Guillet, I. Roland, Y. Zeng, X. Checoury, P. Boucaud, M. Mexis, F. Semond & B. Gayral
Sci Rep., 6,  21650, (2016) - Papier régulier

⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate

B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A, 212,  2297–2301, (2015) - Papier régulier

⋄ Epitaxial challenges of GaN on silicon

F. Semond
MRS Bulletin, vol 40,  412-417, (2015) - Papier invité

⋄ Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, M. Mexis, F. Semond, and P. Boucaud
Appl. Phys. Lett., 106,  081105, (2015) - Papier régulier

⋄ Aluminum nitride photonic crystals and microdiscs for ultra-violet nanophotonics

D. Néel, I. Roland, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, S. Semond, P. Boucaud
Adv. Nat. Sci: Nanosci. Nanotechnol., 5,  023001, (2014) - Papier régulier

⋄ Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

I. Roland, Y. Zeng, Z. Han, X. Checoury, C. Blin, M. El Kurdi, A. Ghrib, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, P. Boucaud
Appl. Phys. Lett., 105,  11104, (2014) - Papier régulier

⋄ Low loss GaN waveguides for visible light on Si Substrates

M. Gromovyi, F. Semond, J.Y. Duboz, G. Feuillet, M.P. De Micheli
J. Europ. Opt. Soc. Rap. Public., 9,  14050, (2014) - Papier régulier

⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films

F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404,  146-151, (2014) - Papier régulier

⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond
Appl. Phys. Lett., 104,  241113, (2014) - Papier régulier

⋄ Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons

J.H. Buss, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hagele
Appl. Phys. Lett., 103,  092401, (2013) - Papier régulier

⋄ Role of magnetic polarons in ferromagnetic GdN

F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87,  035202, (2013) - Papier régulier

⋄ Imaging of photonic modes in an AlN-based photonic crystal probed by an ultra-violet internal light source

C. Brimont, T. Guillet, S. Rousset, D. Néel, X. Checoury, S. David, P. Boucaud, D. Sam-Giao, B. Gayral, M. J. Rashid, and F. Semond
Optics Letters, 38,  5059, (2013) - Papier régulier

⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers

M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès
Semicond. Sci. Tech., 28,  035006, (2013) - Papier régulier

⋄ High quality factor photonicresonators for nitride quantum dots

T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil, D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud
Phys. Stat. Sol. B, 249,  449, (2012) - Papier régulier

⋄ LO-phonon-assisted polariton lasing in a ZnO-based microcavity

L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zúñiga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont and T. Guillet
Phys. Rev. B, 85,  121201, (2012) - Papier régulier

⋄ Fabrication and growth of GaN-based micro and nanostructures

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9,  412-427, (2012) - Papier invité

⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate

T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier
Phys. Stat. Sol. C, 10,  425, (2012) - Article de conférence

⋄ High quality factor AlN nanocavities embedded in a photonic crystal waveguide

D. Sam-Giao, D. Néel, S. Sergent, B. Gayral, M.J. Rashid, F. Semond, J.Y. Duboz, M. Mexis, T. Guillet, C. Brimont, S. David, X. Checoury and P. Boucaud
Appl. Phys. Lett., 100,  191104, (2012) - Papier régulier

⋄ Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates

M. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, F. Semond
Solid State Electronics, 75,  86-92, (2012) - Papier régulier

⋄ Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

L.F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.C. Moreno, E. Frayssinet, and F. Semond
J. Appl. Phys., 111,  023511, (2012) - Papier régulier

⋄ Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon

F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux
Superlattice Microst, 52,  541, (2012) - Papier régulier

⋄ Non-linear emission properties of ZnO microcavities

T. Guillet, C. Brimont, P. Valvin, B. Gil, T. Bretagnon, F. Medard, M. Mihailovic, J. Zúñiga-Pérez, F. Semond, S. Bouchoule
Phys. Stat. Sol. C, 9,  1225, (2012) - Article de conférence - invité

⋄ Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

P.E. Malinowski, J.Y. Duboz, P. De Moor, K. Minoglou, J. John, S. Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, and C. Van Hoof
Appl. Phys. Lett., 98,  141104, (2011) - Papier régulier

⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties

S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109,  053514, (2011) - Papier régulier

⋄ Laser emission with excitonic gain in a ZnO planar microcavity

T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 98,   211105 , (2011) - Papier régulier

⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin
IEEE FCS, 2011,  1-5, (2011) - Article de conférence

⋄ High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Optics Letters, 36,  2203-2205, (2011) - Papier régulier

⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot
IEEE MEMS, 24th MEMS Int. Conf.,  581-584, (2011) - Article de conférence

⋄ AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range

P.E. Malinowski, J.Y. Duboz, P. De Moor, J. John, K. Minoglou, P. Srivastava, F. Semond, E. Frayssinet, B. Giordanengo, A. BenMoussa, A. Gottwald, C. Laubis, R. Mertens, X. Van Hoof
Electron Dev. Lett., 32,  1561, (2011) - Papier régulier

⋄ Polariton lasing in a hybrid bulk ZnO microcavity

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 99,  161104, (2011) - Papier régulier

⋄ Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime

L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont and T. Guillet
Appl. Phys. Express, 4,  072001, (2011) - Papier régulier

⋄ Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime

J.H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A.D. Wieck, and D. Hägele
Phys. Rev. B, 84,  153202, (2011) - Papier régulier

⋄ High quality factor of AlN microdisks embedding GaN quantum dot

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Phys. Stat. Sol. C, 8,  2328, (2011) - Article de conférence

⋄ Hybrid cavity polaritons in a ZnO-perovskite microcavity

G. Lanty, S. Zhang, J.S. Lauret, E. Deleporte, P. Audebert, S. Bouchoule, X. Lafosse, J. Zúñiga-Pérez, F. Semond, D. Lagarde, F. Médard, and J. Leymarie
Phys. Rev. B, 84,  195449, (2011) - Papier régulier

⋄ AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate

D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury, P. Boucaud
Appl. Phys. Lett., 98,  261106, (2011) - Papier régulier

⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth, 312 - n° 19,  2683-2688 , (2010) - Papier régulier

⋄ Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities

F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J.C. Moreno, F. Semond, M. Leroux, and S. Bouchoule
J. Appl. Phys., 108,  043508, (2010) - Papier régulier

⋄ Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, L. Hirsch
J. Cryst. Growth, 312,  3583, (2010) - Papier régulier

⋄ Temperature dependence of electron spin relaxation in bulk GaN

J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Phys. Rev. B, 81,  155216, (2010) - Papier régulier

⋄ GaN quantum dots in (Al,Ga)N-based Microdisks

S. Sergent, J.C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, B. Gayral, D. Néel, S. David, P. Boucaud, M. Leroux, F. Semond
J. Phys.: Conf. Ser., 210,  012005, (2010) - Article de conférence

⋄ Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results

F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, J. Leymarie, M. Mihailovic, D.D. Solnyshkov, G. Malpuech, E. Frayssinet, S. Sergent, F. Semond, M. Leroux, S. Bouchoule
J. Phys.: Conf. Ser., 210,  012026, (2010) - Article de conférence

⋄ AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, J.C. De Jaeger, C. Gaquière, Y. Cordier, and F. Semond
IEEE Trans. Electron Devices, 57,  1497-1503, (2010) - Papier régulier

⋄ Monolithic integration of AlGaN/GaN HFET with MOS on silicon < 111 > substrates

P.N. Chyurlia, F. Semond , T. Lester , J.A. Bardwell et al
Electron. Lett., 46,  240, (2010) - Papier régulier

⋄ Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities

F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux
Photonics and Nanostructures, 7,  26, (2009) - Article de conférence

⋄ Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms

F. Reveret, P. Disseix, J. Leymarie, F. Semond F et al.
Solid State Com., 150,  122, (2009) - Papier régulier

⋄ GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures

S. Sergent, J.C. Moreno, E. Frayssinet, S. Chenot, M. Leroux, and F. Semond
Applied Physics Express, 2,  051003, (2009) - Papier régulier

⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?

A. Le Louarn, S. Vézian, F. Semond and J. Massies
J. Cryst. Growth, 311,  3278, (2009) - Papier régulier

⋄ Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption

F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet
Phys. Rev. B, 79,  125302, (2009) - Papier régulier

⋄ First demonstration and performance of AlGaN based focal plane array for deep-UV imaging

J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir
SPIE procedings, 7474,  74741G, (2009) - Article de conférence

⋄ Epitaxial aluminium nitride on patterned silicon

J. Moreno, E. Frayssinet, F. Semond et al.
Materials Science in Semicond. Processing, 12,  31, (2009) - Article de conférence

⋄ Optical investigations of bulk and multi-quantum well nitride-based microcavities

F. Reveret, F. Medard, P. Disseix, F. Semond et al.
Optical Materials, 31,  505, (2009) - Article de conférence

⋄ Optical and excitonic properties of ZnO films

M. Mihailovic, A. L. Henneghien, S. Faure, P. Disseix, J. Leymarie, A. Vasson, D. A. Buell, F. Semond, C. Morhain, and J. Zúñiga-Pérez
Optical Matérials, 31,  532, (2009) - Article de conférence

⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2,  715-718, (2009) - Article de conférence

⋄ Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 95,  121102, (2009) - Papier régulier

⋄ Backside illuminated GaN on Si Schottky photodiode for UV radiation detection

P.E. Malinowski, J. John, J.Y. Duboz, A. Lorenz, J.G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J.F. Hochedez and B. Giordaneng
Electron Dev. Lett., 30,  1308, (2009) - Papier régulier

⋄ Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary
Materials Science in Semiconductor Processing, 12,  16-20, (2009) - Article de conférence

⋄ Anisotropic electron spin relaxation in bulk GaN

J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Appl. Phys. Lett., 95,  192107, (2009) - Papier régulier

⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C, 6 - S2,  1020-1023, (2009) - Article de conférence

⋄ Interfacial properties of AlN and oxidized AlN on Si

M. Placidi, A. Perez-Tomas, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi and J. Millán.
surface science, 604,  63, (2009) - Papier régulier

⋄ Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration

P. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J.C. Moreno, and N.G. Tarr
Phys. Stat. Sol. A, 206,  371-374, (2009) - Papier régulier

⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105,  033701, (2009) - Papier régulier

⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311,  2002-2005, (2009) - Article de conférence

⋄ Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory

R. Bardoux, T.y Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77,  235315, (2008) - Papier régulier

⋄ Molecular Beam Epitaxy of AlN Layers on Si (111)

J.C. Moreno, E. Frayssinet, F. Semond et al.
MRS symposium proceeding, 1068,  141-145, (2008) - Article de conférence

⋄ Polarized emission from GaN/AlN quantum dots: single-dot spectroscopy and symmetry-based theory

R. Bardoux, T. Guillet, B. Gil, P. Levebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77,  235315, (2008) - Papier régulier

⋄ Dry etching of N-face GaN using two high-density plasma etch techniques

F. Rizzi, K. Bejtka, F. Semond et al.
Phys. Stat. Sol. C, 4,  200-203, (2008) - Article de conférence

⋄ Strong coupling in bulk GaN microcavities grown on silicon

F. Reveret, I.R. Sellers, P. Disseix, F. Semond et al.
Phys. Stat. Sol. C, 4,  108-111, (2008) - Article de conférence

⋄ Temperature dependence of the polariton relaxation bottleneck in a GaN microcavity

F. Stokker-Cheregi, A. Vinattieri, M. Colocci, F. Semond et al.
Phys. Stat. Sol. C, 5,  2257, (2008) - Article de conférence

⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities

F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli
Appl. Phys. Lett., 92,  042119, (2008) - Papier régulier

⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond
IEEE Electron Device Letters, 29,  1187-1189, (2008) - Papier régulier

⋄ Influence of the mirrors in the strong coupling regime in planar GaN microcavities

F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies
Phys. Rev. B, 77,  195303, (2008) - Papier régulier

⋄ Strong light-matter coupling in GaN-based microcavities grown on silicon substrates

F. Semond, I.R. Sellers, N. Ollier et al.
MRS proceedings, 1068,  95-100, (2008) - Article de conférence

⋄ Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with Silicon microelectronics

S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang
J. Cryst. Growth, 311,  2087-2090, (2008) - Article de conférence

⋄ Mechanisms of ammonia-MBE growth of GaN on SiC for transport devices

H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau
J. Cryst. Growth, 311,  2091-2095, (2008) - Article de conférence

⋄ Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

T.D. Veal, P.D.C. King, S.A. Hatfield, L.R. Bailey, C.F. McConville, B. Martel, J.C. Moreno, E. Frayssinet, F. Semond, and J. Zúñiga-Pérez
Appl. Phys. Lett., 93,  202108, (2008) - Papier régulier

⋄ AlGaN photodetectors for applications in the extreme UV range

P. Malinowski, J. John, A. Lorrenz, P.A. Alonso, M. Germain, J. Derluyn, K. Cheng, G. Borghs, R. Mertens, J.Y. Duboz, F. Semond, U. Kroth, M. Richter, J.F. Hochedez, A. Ben Moussa
Proc. SPIE, 7003,  , (2008) - Article de conférence

⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1,  121101, (2008) - Papier régulier

⋄ Highly sensitive strained AlN on Si(111) resonators

M. Placidi, J.C. Moreno, P. Godignon, N. Mestres, E. Frayssinet, F. Semond, C. Serre
Sensors and Actuators A: Physical, 150,  64-68, (2008) - Papier régulier

⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068,  51-56, (2008) - Article de conférence

⋄ Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka, F. Réveret, R.W. Martin, P.R. Edwards, A. Vasson, J. Leymarie, I. Sellers, J.Y. Duboz, M. Leroux, and F. Semond
Appl. Phys. Lett., 92,  241105, (2008) - Papier régulier

⋄ Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities

K. Bejtka, P.R. Edwards, R.W. Martin, F. Reveret, A. Vasson, J. Leymarie, I.R. Sellers, M. Leroux, and F. Semond
Semicond. Sci. Tech., 8,  045008, (2008) - Papier régulier

⋄ AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV)

J. John, P. Malinowski, P. Aparicio, J.Y. Duboz, F. Semond et al.
Optical sensing technology and applications, 6585,  33-40, (2007) - Article de conférence

⋄ Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots: Role of the electron-hole dipole

R. Bardoux, T. Guillet, P. Lefebvre, F. Semond et al.
Physics of semiconductors, B893,  941-942, (2007) - Article de conférence

⋄ From evidence of strong light-matter coupling to polariton emission in GaN microcavities

I.R Sellers, F. Semond, M. Zamfirescu et al.
Phys. Stat. Sol. B, 244,  1882-1886, (2007) - Article de conférence

⋄ Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond et al.
Superlattice Microst, 41,  414-418, (2007) - Article de conférence

⋄ AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication

S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies
European Microwave Integrated Circuits Conference, 2007,  96-99, (2007) - Article de conférence

⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE

Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
J. Cryst. Growth, 301-302,  434-436, (2007) - Article de conférence

⋄ In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy

Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler
J. Cryst. Growth, 301-302,  71-74, (2007) - Article de conférence

⋄ Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau
Phys. Stat. Sol. (c), 4, n°7,  2670-2673, (2007) - Article de conférence

⋄ AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

S. Boulay, S. Touati, A.A. Sar, V. Hoel, C. Gaquière, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, and J. Massies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, No. 11,  2843-2848, (2007) - Papier régulier

⋄ Polariton emission in GaN microcavities

M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies
Superlattice Microst, 41,  284, (2007) - Article de conférence

⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime

F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies
Superlattice Microst, 41,  376, (2007) - Article de conférence

⋄ (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, X.N. Kang, G.Y. Zhang, E. Gu, M.D. Dawson, I.M. Watson, and R.W. Martin
Appl. Phys. Lett., 90,  111112, (2007) - Papier régulier

⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie
Journal de Physique IV, 132,  365-368, (2006) - Article de conférence

⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
Phys. Stat. Sol. (c), 3, N°6,  2325-2328, (2006) - Article de conférence

⋄ Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau
Superlattice Microst, (40),  359-362, (2006) - Article de conférence

⋄ Strong coupling of light with A and B excitons in GaN microcavities grown on silicon

I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson
Phys. Rev. B, 73,  033304, (2006) - Papier régulier

⋄ Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature

I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson
Phys. Stat. Sol. (b), 243(7),  1639, (2006) - Article de conférence

⋄ investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

M. Benaissa, P. Vennéguès, O. Tottereau, L. Nguyen and F. Semond
Appl. Phys. Lett., 89,  231903, (2006) - Papier régulier

⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11),  113304-1-4, (2006) - Papier régulier

⋄ Room temperature Strong coupling in low finesse GaN microcavities

I.R. Sellers, F. Semond, M. Leroux, et al.
MRS symposium, 892,  485-490, (2006) - Article de conférence

⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature

I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa
Phys. Rev. B, 74,  193308, (2006) - Papier régulier

⋄ AlGaN/GaN HEMTs on (001) silicon substrates

S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies
Electron. Lett., 42,  117-118, (2006) - Papier régulier

⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies
Superlattice Microst, 40,  295-299, (2006) - Article de conférence

⋄ Photoluminescence of single GaN/AlN quantum dots on Si(111): spectral diffusion effects

R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, F. Semond
Phys. Rev. B, 74,  195319, (2006) - Papier régulier

⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie
J. Cryst. Growth, 278/1-4,  383-386, (2005) - Article de conférence

⋄ Electron mobility and transfer characteristics in AlGaN/GaN HEMTs

Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies
Phys. Stat. Sol. (c), 2, No. 7,  2720-2723, (2005) - Article de conférence

⋄ Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures

J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies
Proc. Material Research Society Spring Meeting, 864,   579-584, (2005) - Article de conférence

⋄ Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities

K. Bejtka, F. Rizzi, P. R. Edwards, R.W. Martin, E. Gu, M.D. Dawson, I.M. Watson, I.R. Sellers, F. Semond
Phys. Stat. Sol. (a), 202,  2648, (2005) - Papier régulier

⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth, 278/1-4,  393-396, (2005) - Article de conférence

⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c), 2, No. 7,  2187-2190, (2005) - Article de conférence

⋄ High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy

S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies
Appl. Phys. Lett., 87,  133505, (2005) - Papier régulier

⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon

F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson
Appl. Phys. Lett., 87,  021102, (2005) - Papier régulier

⋄ Spectroscopy of a bulk GaN microcavity grown on Si(111)

N. Ollier, F. Natali, D. Byrne, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond Et J. Massies
Jpn. J. Appl. Phys, 44,  4902, (2005) - Papier régulier

⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells

F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71,  75311, (2005) - Papier régulier

⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie
Phys. Stat. Sol. (c), 2, No. 7,  2195-2198, (2005) - Article de conférence

⋄ Electronic properties of deep defects in n-type GaN

P. Muret, Ch. Ulzhöfer, J. Pernot, Y. Cordier, F. Semond, Ch. Gacquière, D. Théron
Superlattice Microst, 36,  435-443, (2004) - Article de conférence

⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,  125329, (2004) - Papier régulier

⋄ High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates

A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 25, No.4,  167-169, (2004) - Papier régulier

⋄ Electronic structure of wurtzite and zinc-blende AlN

P. Jonnard, N. Capron, F. Semond, J. Massies, E. Martinez-Guerrero, H. Mariette
Eur. Phys. J. B, 42,  351, (2004) - Papier régulier

⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy

M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36,  659, (2004) - Article de conférence

⋄ Phonon deformation potential in hexagonal GaN

F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,  155215, (2004) - Papier régulier

⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy

F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies
Sol. Stat. Comm., 132,  679, (2004) - Papier régulier

⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature

F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie
Mater. Res. Soc. Symp. Proc., 798,  613-18, (2004) - Article de conférence

⋄ Potentialities of GaN-based microcavities in strong coupling regime at room temperature

N. Ollier, F. Natali, D. Byrne, P. Disseix, A. Vasson, J. Leymarie, F. Semond, J. Massies
Superlattices Microstruct., 34,  599-606, (2004) - Papier régulier

⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride

S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science, 234,  445, (2004) - Article de conférence

⋄ Cubic SiC surface structure studied by X-ray diffraction

M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond, L. Di-Cioccio, T. Billion
Mat. Sci. For., 433-436,  571-4, (2003) - Article de conférence

⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon

J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy
Jpn. J. Appl. Phys, 42,  118, (2003) - Papier régulier

⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies
Phys. Rev. B, 68(15),  153313, (2003) - Papier régulier

⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth, 251, Issues 1-4,  811-815, (2003) - Article de conférence

⋄ AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density

R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 39 (7),  626-628, (2003) - Papier régulier

⋄ Power Results at 4GHz of AlGaN/GaN HEMTs on High Resistive Silicon (111) substrate

N. Vellas, C. Gaquière, A. Minko, V. Hoël, J.C. De Jaeger, Y. Cordier, and F. Semond
IEEE Microwave and Wireless Components Letters, 13, n°3,  99-101, (2003) - Papier régulier

⋄ Origins of GaN(0001) Surface Reconstructions

S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
Surf. Sci., 541,  242, (2003) - Papier régulier

⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys., 94,  6499, (2003) - Papier régulier

⋄ UV metal semiconductor metal detectors

J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès, F. Semond, J.Y. Duboz, L. Hirsch
Proc. of NATO Conference, ,  , (2003) - Article de conférence

⋄ Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

R. Aubry, J.C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.A. Diforte-Poisson, A. Romann, S.L. Delage
Eur. Phys. J. Appl. Phys., 22(2),  77-82, (2003) - Papier régulier

⋄ RBS studies of AlGaN/AlN Bragg reflectors

L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie
Phys. Stat. Sol. (a), 195, No.3,  502-507, (2003) - Article de conférence

⋄ Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities

N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies
Phys. Stat. Sol. (a), 195, No.3,  543-550, (2003) - Article de conférence

⋄ Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies
J. Appl. Phys., 93(9),  5222-5226, (2003) - Papier régulier

⋄ Atomic structure determination of the Si-rich beta -SiC(001) 3*2 surface by grazing-incidence x-ray diffraction: a stress-driven reconstruction

M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, M. Noblet, S. Chiang, F. Semond
Phys. Rev. B, 68(16),  165321-1-8, (2003) - Papier régulier

⋄ Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction

H. Enriquez, M. D'angelo, V.Yu. Aristov, V. Derycke, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond
J. Vac. Sci. Technol. B, 21(4),  1881-5, (2003) - Papier régulier

⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters

D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies
Conference on Lasers and Electro-Optics Europe, 03TH8666,  178, (2003) - Article de conférence

⋄ Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments

A. Reale, G. Massari, A. Di-Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, J. Massies
J. Appl. Phys., 93(1),  400-9, (2003) - Papier régulier

⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont
Appl. Phys. Lett., 82(9),  1386, (2003) - Papier régulier

⋄ Modelling and spectroscopy of GaN microcavities

N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 190,  187, (2002) - Article de conférence

⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a), N°1,  61, (2002) - Article de conférence

⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon

M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart
Phys. Stat. Sol. (b), 234,  887, (2002) -

⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector

L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 91,  6095, (2002) - Papier régulier

⋄ Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells

A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,  87, (2002) - Article de conférence

⋄ Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells

J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,  155, (2002) - Article de conférence

⋄ High power AlGaN/GaN HEMTs on resistive silicon substrate

V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 38,  750, (2002) - Papier régulier

⋄ High linearity performances of GaN HEMT devices on silicon substrate at GHz

N. Vellas, C. Caquiere, Y. Guhel, M. Werquin, F. Bue, R. Aubry, S. Delage, F. Semond, J.C. De Jaeger
IEEE Electron Device Letters, 23(8),  461, (2002) - Papier régulier

⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111)

F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie
Jpn. J. Appl. Phys, 41(10B),  L1140-2, (2002) - Papier régulier

⋄ Residual donors in wurtzite GaN homoepitaxial layers and heterostructures

G. Neu, M. Teisseire-Doninelli, C. Morhain, F. Semond, N. Grandjean, B. Beaumont, E. Frayssinet, W. Knap, A. M. Witowski, M. L. Sadowski, M. Leszczynski, P. Prystawko
Phys. Stat. Sol. (b), 235,  20, (2002) - Article de conférence

⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation

J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 92,  5602, (2002) - Papier régulier

⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, S. Delage
Electron. Lett., 38(2),  91, (2002) - Papier régulier

⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si

J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,  325, (2001) - …

⋄ From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization

M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies
Mat. Sci. For., 353-356,  795, (2001) - …

⋄ Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111)

F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 183,  163, (2001) - …

⋄ Surface morphology of GaN grown by molecular beam epitaxy

S. Vézian, J. Massies, F. Semond, N. Grandjean
Mat. Sci. Eng. B, 82,  56, (2001) - …

⋄ High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy

F. Semond, P. Lorenzini, N. Grandjean, J. Massies
Appl. Phys. Lett., 82,  335, (2001) - Papier régulier

⋄ Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices

F. Semond, H.P.D. Schenk, P. Gibart, S. Camou, T. Pastureaud, A. Soufyane, and S. Ballandras
Ann. Chim. Sci. Mater., 26,  177, (2001) - Article de conférence

⋄ Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

G. Neu, M. Teisseire, P. Lemasson, H. Lahrèche, N. Grandjean, F. Semond, B. Beaumont, I. Grzegory, S. Porowski, R. Triboulet
Physica B, 302-303,  39, (2001) - …

⋄ Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy

P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Microscopy, 202,  212, (2001) - …

⋄ Micro-Raman study of wurtzite AlN layers grown on Si(111)

J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, F. Semond, J. Massies
Phys. Stat. Sol. (a), 188,  511, (2001) - …

⋄ Potentialities of GaN-based microcanivities grown on silicon substrates

N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 188,  519, (2001) - …

⋄ Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields

D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,  851, (2001) - …

⋄ Molecular beam epitaxy of group-III nitrides on silicon substrates : growth, properties and devices applications

F. Semond, Y. Cordier, N. Grandjean et al.
Phys. Stat. Sol. (a), 188 (2),  501-510, (2001) - Article de conférence - invité

⋄ Dielectric microcavity in GaN/Si

J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean
Phys. Stat. Sol. (a), 183,  35, (2001) - …

⋄ AlN and GaN layers deposited on sapphire or silicon substrates: Theory and experiment

T. Pastureaud, A. Soufyane, S. Camou, S. Ballandras, H.P.D. Schenk, F. Semond, J. Desbois, and V. Laude
Proc. IEEE Ultrason. Symp., 1,  293-297, (2000) - Article de conférence

⋄ GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range

B. Damilano, N. Grandjean, J. Massies, F. Semond
Applied Surface Science, 164,  241, (2000) - …

⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)

S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès
Phys. Rev. B, 61,  7618, (2000) - Papier régulier

Contrats en cours


⋄ NIOBIUM (2021 - 2025)

Hétérojonctions nitrure de niobium/nitrure d’élément III par épitaxie par jets moléculaires : première démonstration d’un transistor à base métallique (ANR PRCE) - Projet National
Partenaires: III-VLab, CIMAP, CRHEA

Contrats terminés


⋄ Quanonic (2014 - 2017)

QUAntum and Nonlinear Optics in NItride Cavities (ANR) - Projet National
Partenaires: CRHEA, Inac/SP2M, L2C,PSUD/IEF

⋄ Antipode (2014 - 2018)

Analyse approfondie de la nucléation III-V/Si pour les composants photoniques hautement intégrés (ANR) - Projet National
Partenaires: CEMES, CRHEA, FOTON, IES, IPR, LPN

⋄ MilaGaN (2017 - 2021)

Laser µdisque électrique (ANR) - Projet National
Partenaires: IEF, L2C, INAC, Hong Kong

⋄ EasyGaN (2013 - 2015)

Substrat avancé epiready sur silicium pour la fabrication de GaN faible épaisseur et basse densité de dislocations (ANR) - Projet National
Partenaires: CRHEA

⋄ Sinphoni (2009 - 2011)

Fabrication de résonateurs optiques à fort facteur de qualité avec des matériaux nitrures d’éléments III épitaxiés sur substrat silicium : Microlasers dans la gamme visible-UV intégré sur silicium (ANR) - Projet National
Partenaires: C2N, L2C, INAC, CRHEA

Encadrements en cours


Antoine Barbier-Cueil (Doctorant)
Elodie Carneiro (Doctorant)
Antoine Pedeches (Doctorant)

Encadrements terminés


Mohammad Junaebur Rashid (Doctorant) (2012)
Jean-Christophe Moreno (Doctorant) (2009)
Sebastian Tamariz (Post-Doc) (2023)
Sebastian Tamariz (Post-Doc) (2021)
Meletios Mexis (Post-Doc) (2015)
Meletios Mexis (Post-Doc) (2013)
Lars Kappei (Post-Doc) (2013)
Eric Boiteau (Stagiaire) (2018)
Raphaël Di Piazza (Stagiaire) (2016)

HDR


« Enjeux et inrérêts du GaN sur Si, naissance d’une filière en France », 29 mars 2016

Post-doc


Thèse


Cursus