Name : Benjamin Damilano
Status : Researcher
Grade : CRCN
Team(s) : Opto
☎ : +33 4 93 95 7829
Function
Publications (239)
⋄ Investigation of AlGaN UV emitting tunnel junction LED devices by off-axis electron holography David Cooper, Victor Fan Arcara, Benjamin Damilano and Jean-Yves Duboz |
⋄ InN nanowire solar cells on Si with amorphous Si interlayer deposited by sputtering M. Sun, R. Gomez, B. Damilano, J.M. Asensi, F.B. Naranjo, S. Valdueza-Felip |
⋄ Perspectives for III-nitride photonic platforms Philippe Boucaud, Nagesh Bhat, Maksym Gromovyi, Moustafa El Kurdi, Antoine Reserbat-Plantey, Minh Tuan Dau, Mohamed Al Khalfioui, Blandine Alloing, Benjamin Damilano and Fabrice Semond |
⋄ Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, and M. Vladimirova
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⋄ GaN/AlN bilayers for integrated photonics Nagesh Bhat, Maksym Gromovyi, Moustafa El Kurdi, Xavier Checoury, Benjamin Damilano, AND Philippe Boucaud |
⋄ Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates M. Takiguchi, S. Sergent, B. Damilano, S. Vézian, S. Chenot, N. Yazigi, P. Heidt, T. Tsuchizawa, T. Yoda, H. Sumikura, A. Shinya, and M. Notomi, |
⋄ Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions M. GROMOVYI, N. BHAT, H. TRONCHE, P. BALDI, M. EL KURDI, X. CHECOURY, B. DAMILANO, AND P. BOUCAUD |
⋄ Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films R. Aristegui, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, I. Paradisanos, C. Robert, X. Marie, B. Urbaszek, S. Chenot, Y. Cordier, and B. Damilano |
⋄ Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy B Damilano, S Vézian, J Brault, P Ruterana, B Gil and M Tchernycheva |
⋄ On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson,
F. Semond, G. Feuillet, and C. Cornet |
⋄ Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes Jean-Yves Duboz, Victor Fan Arcara, Cynthia Kessaci, Stéphane Vézian, and Benjamin Damilano, |
⋄ Comparison of lasing characteristics of GaN microdisks with different structures Hui Zi, Wai Yuen Fu, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond and Hoi Wai Choi, |
⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier |
⋄ Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, S. Chenot, Y. Cordier, and B. Damilano
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⋄ Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, and B. Gil, |
⋄ Comparison of lasing characteristics of GaN microdisks with different structures Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi |
⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi |
⋄ Porous Nitride LEDs Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva |
⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier |
⋄ Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization D. Cooper, V. Fan Arcara, B. Damilano, L. Amichi, A. Mavel, et al. |
⋄ DUV LEDs based on AlGaN Quantum Dots Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter,
Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil |
⋄ Whispering-gallery mode InGaN microdisks on GaN substrates H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi |
⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet |
⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
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⋄ Bandwidth-unlimited polarization-maintaining metasurfaces Q. Song, S. Khadir, S. Vézian, B. Damilano, P. D. Mierry, S. Chenot, V. Brandli and P. Genevet |
⋄ Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures F. Chiaruttini, T. Guillet, C. Brimont, D. Scalbert, S. Cronenberger, B. Jouault, P. Lefebvre, B. Damilano, and M. Vladimirova
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⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier |
⋄ Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission P. Ruterana, M. Morales, N. Chery, T.H. Ngo, M.-P. Chauvat, K. Lekhal, B. Damilano, and B. Gil |
⋄ Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters T.H. Ngo, R. Comyn, E. Frayssinet, H. Chauveau, S. Chenot, B. Damilano, F. Tendille, B. Beaumont, J.-P. Faurie,
N. Nahas, Y. Cordier |
⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover |
⋄ Full InGaN red light emitting diodes A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A.M. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J.C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta
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⋄ InGaN islands and thin films grown on epitaxial graphene C. Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, A. Dussaigne and B. Hyot |
⋄ Revealing topological phase in Pancharatnam–Berry metasurfaces using mesoscopic electrodynamics Z Gao, S. Golla, R. Sawant, V. Osipov, G. Briere, S. Vezian, B. Damilano, P. Genevet and K. E. Dorfman |
⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud |
⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras |
⋄ Printing polarization and phase at the optical diffraction limit: near-and far-field optical encryption Q. Song, S. Khadir, S. Vézian, B. Damilano, P. de Mierry, S. Chenot, V. Brandli, R. Laberdesque, B. Wattellier and P. Genevet |
⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud |
⋄ Metasurface orbital angular momentum holography H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet |
⋄ Internal quantum efficiency and Auger recombination in green\, yellow and red InGaN-based light emitters grown along the polar direction T.H. Ngo, B. Gil, B. Damilano, K. Lekhal, P. de Mierry |
⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet |
⋄ Lasing up to 380 K in a sublimated GaN nanowire S. Sergent, B. Damilano, S. Vézian, S. Chenot, T. Tsuchizawa, and M. Notomi |
⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua |
⋄ Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, D. Cooper |
⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields |
⋄ Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes V. Fan Arcara; B. Damilano; G. Feuillet; S. Vézian; K. Ayadi; S. Chenot; J.-Y. Duboz |
⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud |
⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil |
⋄ Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics S. Sergent, B. Damilano, S. Vézian, S. Chenot, M. Takiguchi, T. Tsuchizawa, H. Taniyama, M. Notomi |
⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields |
⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet |
⋄ (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, and J.-Y. Duboz |
⋄ Metasurfaces Orbital Angular Momentum Holography H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet |
⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures F. Chiaruttini, T. Guillet, C Brimont, B. Jouault, P. Lefebvre, J. Vives, S. Chenot, Y. Cordier, B. Damilano, and M. Vladimihristellerova |
⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud |
⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet |
⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields |
⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier |
⋄ Enhanced excitonic emission efficiency in porous GaN T.H. Ngo, B. Gil, T.V. Shubina, B. Damilano, S. Vezian, P. Valvin, J. Massies |
⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel |
⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud |
⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil |
⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001) S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil |
⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier |
⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate B. Damilano, S. Vézian, and J. Massies |
⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation B. Damilano, S. Vézian, and J. Massies |
⋄ Internal quantum efficiency in polar and semipolar (11–22) In x Ga 1-x N/In y Ga 1-y N quantum wells emitting from blue to red T.H. Ngo, N. Chery, P. Valvin, A. Courville, P. de Mierry, B. Damilano, P. Ruterana, B. Gil |
⋄ The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Courville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. MüLler-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana |
⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier |
⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies |
⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil |
⋄ Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures T.H. Ngo, B. Gil, B. Damilano, P. Valvin, A. Courville, and P. de Mierry |
⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali |
⋄ Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck |
⋄ Recent improvements of flexible GaN-based HEMT technology S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, Y. Cordier, B. Damilano, G. Tabares Jimenez, A. Ebongue, and V. Hoel |
⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis,
M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont,
and T. Guillet |
⋄ Ultraviolet light emitting diodes using III-N quantum dots J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil |
⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali |
⋄ High temperature electrical transport study of Si-doped AlN S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux,
B. Damilano, J. Brault |
⋄ Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses D. H. Rich, O. Moshe, B. Damilano and J. Massies |
⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont |
⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil |
⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho |
⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies |
⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001) S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies |
⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier |
⋄ First power performance demonstration of flexible AlGaN/GaN High Electron Mobility Transistor S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, E. Okada, Y. Cordier, B. Damilano, G. Tabares-Jiménez, A. Ebongué, and V. Hoel |
⋄ Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. De Mierry |
⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil |
⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies |
⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz |
⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
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⋄ Yellow–red emission from (Ga,In)N heterostructures B. Damilano and B. Gil |
⋄ Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal and P. De Mierry |
⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald |
⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond |
⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source B. Damilano, J. Brault and J. Massies |
⋄ Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures T.H. Ngo, D. Rosales, B. Gil, P. Valvin, B. Damilano, K. Lekhal, P. de Mierry |
⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil |
⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck |
⋄ Highly resistive epitaxial Mg-doped GdN thin films C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali |
⋄ The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures D. Rosales, T.H. Ngo, P. Valvin, K. Lekhal, B. Damilano, P. De Mierry, B. Gil, T. Bretagnon |
⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies |
⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil |
⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano |
⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier |
⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter |
⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier |
⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
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⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies |
⋄ Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies |
⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano. |
⋄ GaN doped with beryllium—An effective light converter for white light emitting diodes H. Teisseyre, M. Bockowski, I. Grzegory, A. Kozanecki, B. Damilano, Y. Zhydachevskii, M. Kunzer, K. Holc, and U.T. Schwarz |
⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies |
⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau |
⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau
and P Vennéguès |
⋄ Role of magnetic polarons in ferromagnetic GdN F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer |
⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies |
⋄ Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.M. Lamy, M. Akhter, P.P. Maaskant, E. Frayssinet, P. de Mierry, and J.Y. Duboz |
⋄ Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111) D.H. Rich, O. Moshe, B. Damilano, and J. Massies |
⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies |
⋄ Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111) O. Moshe, D. H. Rich, B. Damilano, and J. Massies |
⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck |
⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry,
M. Leroux, A. Courville, O. Tottereau and J. Massies |
⋄ Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111) O. Moshe, D.H. Rich, B. Damilano, and J. Massies |
⋄ Blue-green and white color tuning of monolithic light emitting diodes B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
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⋄ Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation D.H. Rich, O. Moshe, S. Birner , M. Povolotskyi , B. Damilano , J. Massies |
⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
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⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues,
B. Damilano, and J. Massies |
⋄ Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses O. Moshe, D.H. Rich, B. Damilano and J. Massies |
⋄ Perturbing GaN/AlN quantum dots with uniaxial stressors Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
|
⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies |
⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies |
⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001) Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond |
⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux |
⋄ Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers from 1.29 to 1.52 µm J.M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hughes, J.Y. Duboz, J. Massies |
⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies |
⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies |
⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies |
⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies |
⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies |
⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies |
⋄ Infrared detectors based on InGaAsN/GaAs intersubband transitions J.Y. Duboz, M. Hugues, B. Damilano, A. Nedelcu, P. Bois, N. Kheirodin, F.H. Julien |
⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110) Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond |
⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies |
⋄ High doping level in Mg-doped GaN layers grown at low temperature A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean |
⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck |
⋄ Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies |
⋄ Diodes électroluminescentes blanches pour l'éclairage B. Damilano, J. Brault, A. Dussaigne, J. Massies |
⋄ Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M. M. Hugues, B. Damilano, J.Y. Duboz, J. Massies |
⋄ Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J.Y. Duboz |
⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck |
⋄ Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111) G. Sarusi, O. Moshe, S. Khatsevich, D.H. Rich, and B. Damilano |
⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies |
⋄ Monolithic white light emitting diodes with a broad emission spectrum A. Dussaigne, J. Brault, B. Damilano, J. Massies |
⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies |
⋄ Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells M. Hugues, B. Damilano, J.M. Chauveau, J.Y. Duboz and J. Massies |
⋄ InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications M. Richter, B. Damilano, J. Massies, and J.Y. Duboz |
⋄ Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck |
⋄ 1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck |
⋄ Optimum indium composition for (Ga,In)’(N,As) /GaAs quantum wells emitting beyond 1.5µm M. Hugues, B. Damilano, J.Y. Duboz, and J. Massies |
⋄ Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate M. Richter, B. Damilano, J.Y. Duboz, J. Massies, A. Wieck |
⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies |
⋄ Surface morphology of AlN and size dispersion of GaN quantum dots A. Matsuse, N. Grandjean, B. Damilano Et J. Massies |
⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies |
⋄ Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE A. Hierro, J.M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies |
⋄ Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes J.M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sánchez, A. Guzmán, B. Damilano , J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, and A. Trampert |
⋄ (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, A. Hierro |
⋄ Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy A. Hierro, J.M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies |
⋄ Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, and A. Hierro |
⋄ Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, A. Hierro, J.M. Ulloa, and E. Calleja |
⋄ Light-ion beam analysis for microelectronic applications L. Hirsch, P. Tardy, G. Wantz, N. Huby, P. Moretto, L. Serani, F. Natali, B. Damilano, J. Y. Duboz and J. L. Reverchon |
⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies |
⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies |
⋄ Spectroscopy of the electron states in self-organized GaN/AlN quantum dots A. Helman, M. Tchernycheva, Kh. Moumanis, A. Lusson, F. H. Julien, F. Fossard, E. Monroy, B. Daudin, Le Si Dang, B. Damilano, N. Grandjean |
⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies |
⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies |
⋄ Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano and N. Grandjean |
⋄ Optical and structural characterization of self-organized stacked GaN/AlN quantum dots G. Salviati, F. Rossi, N. Armani, V. Grillo, O. Martinez, A. Vinattieri, B. Damilano, A. Matsuse, N. Grandjean |
⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies |
⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies |
⋄ Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots A. Helman, K. Moumanis, M. Tchernycheva, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, F. Fossard, D. Le Si Dang, and B. Daudin |
⋄ Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies |
⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy |
⋄ Intraband spectroscopy of self-organized GaN/AlN quantum dots A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang |
⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies |
⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies |
⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Indium distribution inside quantum wells: The effect of growth interruption in MBE A.M. Sanchez, P. Ruterana, S. Kret, P. Dluzewski, G. Maciejewski, N. Grandjean, B. Damilano |
⋄ Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers S. Kret, G. Maciejewski, P. Dluzewski, P. Ruterana, N. Grandjean, and B. Damilano |
⋄ High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano |
⋄ Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, J. Massies |
⋄ Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire J.L. Bubendorff, N. Grandjean, B. Damilano, M. Troyon |
⋄ In surface segregation in InGaN/GaN quantum wells A. Dussaigne, B. Damilano, N. Grandjean, J. Massies |
⋄ Atomic structure of pyramidal defects in Mg-doped GaN P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart |
⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage |
⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies |
⋄ Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies |
⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells J. Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies |
⋄ In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B. Damilano, J. Massies |
⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies |
⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart |
⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies |
⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage |
⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart |
⋄ On the effect of high Mg doping on the polarity of GaN P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean |
⋄ Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies |
⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies |
⋄ Nuclear microprobe analysis of GaN bases light emitting diodes L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz |
⋄ Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies |
⋄ Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies |
⋄ Direct signature of strained GaN quantum dots by Raman scattering J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies |
⋄ Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies |
⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ Photoconductance measurements and Stokes shift in InGaN alloys J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies |
⋄ Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies |
⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells B. Damilano, N. Grandjean, C. Pernot, J. Massies |
⋄ Group-III nitride quantum heterostructures grown by molecular beam epitaxy N. Grandjean, B. Damilano, J. Massies |
⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties B. Damilano, N. Grandjean, S. Vézian, J. Massies |
⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible spectrum B. Damilano, N. Grandjean, J. Massies |
⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J. |
⋄ Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron excitation K.P. O'donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damilano, N. Grandjean |
⋄ Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies |
⋄ Signature of GaN-AlN quantum dots by nonresonant Raman scattering J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies |
⋄ Surface kinetics of GaN evaporation and growth by molecular beam epitaxy S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano |
⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ GaN and InGaN quantum dots grown by MBE : from UV to red light emission N. Grandjean, B. Damilano, J. Massies |
⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht |
⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie |
⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie |
⋄ GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range B. Damilano, N. Grandjean, J. Massies, F. Semond |
⋄ Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots N. Grandjean, B. Damilano, J. Massies S. Dalmasso |
Current contracts
⋄ IXTASE (2020 - 2025)
Excitons indirects pour les états collectifs émergeants (ANR) - Projet National
Partners: UCA, CRHEA⋄ Reidi (2022 - 2027)
Red emitting InGaN based Microled for microdisplay (ANR) - Projet National
Partners: LETI, CRHEA, IP, NELUMBO, ESRF⋄ LUTEM (01/10/2023 - 31/12/2027)
NANO monde de lasers semiconducteurs en fonctionnement révélé par microscopie électronique ultra-rapide (ANR) - Projet National
Partners:
Old contracts
⋄ Obelix (2015 - 2020)
Transport et condensation d'excitons indirects (ANR) - Projet National
Partners: INSP, L2C, CRHEA⋄ Mosaic2 (2012 - 2014)
Développement d'une technologie et d'un procédé de croissance de LEDs GaN sur substrat de silicium structuré (ANR) - Projet National
Partners: CRHEA, SILSEF, CEA-LETI⋄ Delmono (2011 - 2013)
Prototype de LED monolithique pour la lumière blanche (ANR) - Projet National
Partners: CRHEA, FIST⋄ Napoli (2018 - 2021)
Semiconducteurs III-N naporeux fabriqués par sublimation sélective pour l'optoélectronique (ANR) - Projet National
Partners: CRHEA, L2C, UPSud/C2N, CIMAP⋄ Advanced photonics with wide-Bandgap Nanowires (2019 - 2021)
Advanced photonics with wide-Bandgap Nanowires (CCR) - Projet International
Partners: CRHEA, NTT
Current supervisions
Old supervisions
Sakhawat Hussain (PhD Student) (2014) Gema Tabares-Jiménez (Comment PhD Student) (2016) Kaddour Lekhal (Fixed Term Contract) (2014) Stéphane Brochen (Comment PhD Student) (2013) Cynthia Kessaci (Stagiaire) (2020) Joël Edouard Nkeck (Stagiaire) (2017) Takfarinas Belayel (Stagiaire) (2016) Célédonia Krawczyk (Stagiaire) (2016) Nadim Trad (Stagiaire) (2011)
Post-doc
PhD
(Al, Ga, In)N nanostructures: growth by epitaxy molecular beam, optical properties, diode application emitting
PhD defended in october 2001 at CRHEACurriculum
