Name : Julien Brault
Status :
Grade : DR2
Team(s) : Opto
☎ : +33 4 93 95 4108
Activities
Head of the Opto team
Development of III-N Semiconductor Heterostructures and Devices Grown by Molecular Beam Epitaxy :
Main projects :
- Wide Band Gap AlGaN based Materials for Optoelectronics
- Hetero-epitaxy of AlN on sapphire substrates (MBE, MOCVD) for UV devices
- p type doping of AlGaN for LEDs & lasers, and transistor technology for RF applications
(Projects : ANR Labex GANEX APOGEE 2020-24, PRCE NANOGANUV 2015-19 et EDGaN 2016-20)- Nanostructured AlGaN Active Regions for High Internal Quantum Efficiency
- AlGaN nanostructure engineering : quantum dots/wires/wells
- Epitaxial growth on « high Miller index » surfaces
- Monolithic integration MBE processes on sapphire substrates
(Projects : ANR PRCE NANOGANUV 2015-19 et Labex GANEX APOGEE 2020-24)- Quantum Heterostructure Engineering for Ultra-Violet Devices
- Development of AlGaN based tunnel junctions
- Diodes & lasers with AlGaN QD-based active regions (high EQE LEDs, VCSELs)
- Nanometer periodically structured avalanche photodetectors with high linear gain
(Projects : ANR PRC DUVET 2018-21 et Labex GANEX APOGEE 2020-24)
Publications (85)
⋄ Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings Alexandra Ibanez, Nikita Nikitskiy, Aly Zaiter, Pierre Valvin, Wilfried Desrat, Thomas Cohen, M. Ajmal Khan, Guillaume Cassabois, Hideki Hirayama, Patrice Genevet, Julien Brault, Bernard Gil |
⋄ (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission Aly Zaiter, Nikita Nikitskiy, Maud Nemoz, Phuong Vuong, Vishnu Ottapilakkal, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault |
⋄ Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault |
⋄ Artificial Optoelectronic Synapse with Nanolayered GaN/AlN Periodic Structure for Neuromorphic Computing Xiayang Hua, Jiyuan Zheng, Xu Han, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Lin Gan, Mohamed Al Khalfioui, Julien Brault, Lai Wang |
⋄ Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source O. Romanyuk, J. Brault, I. Gordeev, E. Ukraintsev, J. Houdková, and P. Jiříček |
⋄ Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy B Damilano, S Vézian, J Brault, P Ruterana, B Gil and M Tchernycheva |
⋄ Coulomb blockade: Towards charge control of self-assembled GaN quantum dots at room temperature C. A. Sgroi, J. Brault, J-Y Duboz, S. Chenot, P. Vennéguès, A. Ludwig, and A. D. Wieck |
⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier |
⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier |
⋄ DUV LEDs based on AlGaN Quantum Dots Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter,
Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil |
⋄ Paper Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity L. Abou-Hamdan, S. Hamyeh, A. Iskandar, R. Tauk, J. Brault, M. Tabbal, P.M. Adam, M. Kazan |
⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier |
⋄ UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots J. Brault, M. Al Khalfioui, S. Matta, T.H. Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil |
⋄ Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition Giannazzo, Filippo; Dagher, Roy; Schilirò, Emanuela; Panasci, Salvatore; Greco, Giuseppe; Nicotra, Giuseppe; Roccaforte, Fabrizio; Agnello, Simonpietro; Brault, Julien; Cordier, Yvon; Michon, Adrien |
⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras |
⋄ Photoassisted chemical smoothing of AlGaN surface after laser lift-off Zhongming Zheng, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, and Baoping Zhang |
⋄ Interface dipole and band bending in the hybrid p - n heterojunction Mo S 2 / GaN ( 0001 ) H. Henck, Z. Ben Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, F. Sirotti, F. Bertran, P. Le Fevre, S. Berciaud, A. T. Charlie Johnson, E. Lhuilli |
⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua |
⋄ A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Blandine Alloing, Mathieu Leroux, Seoung-Hwan Park, Julien Brault and Yong-Hoon Cho |
⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li |
⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil |
⋄ Al5+αSi5+δN12, a new Nitride compound R. Dagher, L. Lymperakis, V. Delaye, L. Largeau, A. Michon, J. Brault & P. Vennéguès |
⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel |
⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil |
⋄ Loss analysis in nitride deep ultraviolet planar cavity Z. Zheng, Y. Li, O. Paul, H. Long, S. Matta, M. Leroux, J. Brault, L. Ying, Z. Zheng, and B. Zhang |
⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil |
⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001) S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil |
⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies |
⋄ Efficient second harmonic generation in low-loss planar GaN waveguides M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli |
⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil |
⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski,
T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon |
⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault. |
⋄ Ultraviolet light emitting diodes using III-N quantum dots J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil |
⋄ GaN quantum dot polarity determination by X-ray photoelectron diffraction O. Romanyuk, I. Bartoš, J. Brault, P. De Mierry, T. Paskova, P. Jiříčeka |
⋄ High temperature electrical transport study of Si-doped AlN S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux,
B. Damilano, J. Brault |
⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont |
⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil |
⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho |
⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies |
⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier |
⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil |
⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies |
⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald |
⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond |
⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source B. Damilano, J. Brault and J. Massies |
⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies |
⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil |
⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau |
⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter |
⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
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⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies |
⋄ Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies |
⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano. |
⋄ Plasmon energy from strained GaN quantum wells M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken |
⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies |
⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau |
⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies |
⋄ Comparison of electrical behavior of GaN-based MOS structures obtained by different PECVD process E. Al Alam, I. Cortés, T.Begou, A. Goullet, F. Morancho, A. Cazarré, P. Regreny, J. Brault, Y. Cordier, M.P. Besland, K. Isoird |
⋄ Effect of surface preparation and interfacial layer on the quality of GaN/SiO2 interfaces E. Al Alam, I. Cortés, M.P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho |
⋄ Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strainevolution and phase separation M. Korytov, J.A. Budagosky, J. Brault, T. Huault, M. Benaissa, T. Neisius, J.L. Rouvière, and P. Vennégués |
⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies |
⋄ Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau |
⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry,
M. Leroux, A. Courville, O. Tottereau and J. Massies |
⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies |
⋄ Blue-green and white color tuning of monolithic light emitting diodes B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
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⋄ Carrier transfer and recombination dynamics of a long-lived and visiblerange emission from multi-stacked GaN/AlGaN quantum dots J.H. Kim, B.J. Kwon, Y.H. Cho, T. Huault, M. Leroux, J. Brault |
⋄ Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides Y.H. Cho, H. S. Kwack, B.J. Kwon, J. Barjon, J. Brault, B. Daudin, Le Si Dang |
⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies |
⋄ AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging J.L. Reverchon , J.A. Robot, J.P. Truffer, J.P. Caumes, I. Mourad, J. Brault and J.Y. Duboz |
⋄ Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz |
⋄ First demonstration and performance of AlGaN based focal plane array for deep-UV imaging J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir |
⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli |
⋄ Phase separation in GaN/AlGaN quantum dots M. Benaissa, L. Gu, M. Korytov, T. Huault, P.A. van Aken, J. Brault, and P. Vennéguès |
⋄ UV Imaging Based on AlGaN Arrays J.Y. Duboz, J. Brault, J.P. Truffer, J.A. Robot, K. Robin, J.L. Reverchon |
⋄ Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault, P. Vennéguès |
⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies |
⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies |
⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies |
⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies |
⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001) S. Pezzagna, S. Vézian, J. Brault, and J. Massies |
⋄ Thickness and substrate effects on AlN thin film growth at room temperature B. Abdallah, C. Duquenne, M.P. Besland, E. Gautron, P.Y. Jouan, P.Y. Tessier, J. Brault, Y. Cordier, and M.A. Djouadi
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⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies |
⋄ High doping level in Mg-doped GaN layers grown at low temperature A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean |
⋄ Diodes électroluminescentes blanches pour l'éclairage B. Damilano, J. Brault, A. Dussaigne, J. Massies |
⋄ Monolithic white light emitting diodes with a broad emission spectrum A. Dussaigne, J. Brault, B. Damilano, J. Massies |
Current contracts
⋄ DOPALGAN (2022 - 2027)
p-doping engineering of AlGaN materials (ANR) - Projet National
Partners:Old contracts
⋄ NanoGaNUV (2015 - 2019)
Fabrication, Modélisation, Caractérisation de Nanostructures AlGaN Auto-Assemblées pour Emetteurs UV (ANR) - Projet National
Partners: CRHEA, L2C, INLN, INSP, RIBER S.A⋄ Optique Non-linéaire dans des Guide guides d’onde AlGaN à gradient d’indice (2019 - 2019)
Optique Non-linéaire dans l'AlGaN (Fédération Doeblin) - Projet National
Partners: INPHYNI, CRHEA
Current supervisions
Antoine Barbier-Cueil (PhD Student) Old supervisions
Samuel Matta (PhD Student) (2018) YuanYang Xia (PhD Student) (2013) Nikita Nikitskiy (PhD Student) () Aly Zaiter (PhD Student) () Maxim Korytov (Comment PhD Student) (2017) Joël Edouard Nkeck (Stagiaire) (2017) Takfarinas Belayel (Stagiaire) (2016) François Mondain (Stagiaire) (2015) Gaétano Randazzo (Stagiaire) (2014) Alain Abou Khalil (Stagiaire) (2014) Antoine Ogereau (Stagiaire) (2011)
Background
2002-2004 : LIMMS/CNRS-IIS, Institute of Industrial Science, University of Tokyo, Japan - Post-doctoral Researcher
Nanotechnology in Si microelectronics :
- Si nano-crystal (self-assembly mechanisms, structural properties)
- Realization of MOS diodes and transistors : study of transport properties
2000-2002 : Materials Science Division of the French Atomic Energy Commission - DRFMC, GRENOBLE, France - Post-Doctoral Researcher
Wide bandgap Semiconductor Materials (Nitrides and Silicon Carbide) :
- Hetero-epitaxy of III-Nitrides (growth mechanisms, strain relaxation)
- Structural & optical characterizations (application to UV-lasers)
1997-2000 : Electronics, Optoelectronics and Microsystems Laboratory – LEOM, Ecole Centrale de LYON, France – PhD-student
Nanotechnology in III-V Materials (Phosphide and Arsenide)
- Hetero-epitaxy and fabrication of Quantum Dots and Quantum Wires
- Structural & optical properties for optoelectronic applications
Education
1997-2000 : Electronics, Optoelectronics and Microsystems Laboratory – LEOM, Ecole Centrale de LYON, France
PhD Thesis in Material Physics and Optoelectronics
1992-1997 : University Claude Bernard, LYON, France
Master of Science in Material Science
