Name : Stéphane Vézian
Status : Engineer
Grade : IR1
Team(s) : Nano Spintronics
☎ : +33 4 93 95 4223
Functions
Co-manager of the Spintronics theme
Activities
Physico-chemical study of large-gap semiconductor surfaces by RHEED, LEED, XPS, AFM and STM.
Semiconductor epitaxy by MBE, Element III nitrites (III-N) and nitrided rare earths.
Realization of nanostructures, nanowires, III-N metasurfaces by selective sublimation.
Publications (81)
⋄ Complete magnetization compensation in the intrinsic ferromagnetic semiconductor Gd𝑥Sm1−𝑥N J.D. Miller, H.J. Trodahl, M. Al Khalfioui, Stéphane Vézian, B.J. Ruck |
⋄ Investigation of MoS2 growth on GaN/sapphire substrate using molecular beam epitaxy Mohamed Al Khalfioui, Minh Tuan Dau, Zineb Bouyid, Ileana Florea, Philippe Vennéguès, Julien Brault, Stéphane Vézian, Adrien Michon, Yvon Cordier, Philippe Boucaud |
⋄ Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids Amélie Dussaigne, Colin Paillet, Névine Rochat, David Cooper, Adeline Grenier, Stéphane Vézian, Benjamin Damilano, Adrien Michon & Bérangère Hyot |
⋄ Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, and M. Vladimirova
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⋄ Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates M. Takiguchi, S. Sergent, B. Damilano, S. Vézian, S. Chenot, N. Yazigi, P. Heidt, T. Tsuchizawa, T. Yoda, H. Sumikura, A. Shinya, and M. Notomi, |
⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier |
⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN J. D. Miller, H. J. Trodahl1, M. Al Khalfioui, S. Vézian, and B. J. Ruck |
⋄ Descriptor engineering in machine learning regression of electronic structure properties for 2D materials M.T. Dau, M. Al Khalfioui, A. Michon, A. Reserbat-Plantey, S. Vézian and P. Boucaud |
⋄ Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy B Damilano, S Vézian, J Brault, P Ruterana, B Gil and M Tchernycheva |
⋄ Enhanced Sm spin projection in GdxSm1−xN J. D. Miller, J. F. McNulty, B. J. Ruck, M. Al Khalfioui, S. Vézian, M. Suzuki, H. Osawa, N. Kawamura, and H. J. Trodahl |
⋄ Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes Jean-Yves Duboz, Victor Fan Arcara, Cynthia Kessaci, Stéphane Vézian, and Benjamin Damilano, |
⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier |
⋄ Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, and B. Gil, |
⋄ Porous Nitride LEDs Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva |
⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier |
⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet |
⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
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⋄ Bandwidth-unlimited polarization-maintaining metasurfaces Q. Song, S. Khadir, S. Vézian, B. Damilano, P. D. Mierry, S. Chenot, V. Brandli and P. Genevet |
⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier |
⋄ Magnetoresistance of epitaxial GdN films T. Maity, H. J. Trodahl, S. Granville, S. Vézian, F. Natali, and B. J. Ruck |
⋄ InGaN islands and thin films grown on epitaxial graphene C. Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, A. Dussaigne and B. Hyot |
⋄ Printing polarization and phase at the optical diffraction limit: near-and far-field optical encryption Q. Song, S. Khadir, S. Vézian, B. Damilano, P. de Mierry, S. Chenot, V. Brandli, R. Laberdesque, B. Wattellier and P. Genevet |
⋄ Metasurface orbital angular momentum holography H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet |
⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet |
⋄ Lasing up to 380 K in a sublimated GaN nanowire S. Sergent, B. Damilano, S. Vézian, S. Chenot, T. Tsuchizawa, and M. Notomi |
⋄ Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, D. Cooper |
⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields |
⋄ Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes V. Fan Arcara; B. Damilano; G. Feuillet; S. Vézian; K. Ayadi; S. Chenot; J.-Y. Duboz |
⋄ Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics S. Sergent, B. Damilano, S. Vézian, S. Chenot, M. Takiguchi, T. Tsuchizawa, H. Taniyama, M. Notomi |
⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields |
⋄ Metasurfaces Orbital Angular Momentum Holography H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet |
⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet |
⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields |
⋄ Optimization and uncertainty quantification of gradient index metasurfaces N. Schmitt, N. Georg, G. Brière, D. Loukrezis, S. Héron, S. Lanteri, C. Klitis, M. Sorel, U. Rômer, H. De Gersem, S. Vézian, and P. Genevet |
⋄ Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN C.-M. Lee, J. Schacht, H. Warring, H. J. Trodahl, B. J. Ruck, S. Vézian, N. Gaston, and F. Natali |
⋄ Electron transport in heavily doped GdN T. Maity, H.J. Trodahl, F. Natali, and B.J. Ruck and S. Vézian |
⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate B. Damilano, S. Vézian, and J. Massies |
⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation B. Damilano, S. Vézian, and J. Massies |
⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies |
⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali |
⋄ Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck |
⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali |
⋄ Superconductivity in the ferromagnetic semiconductor samarium nitride E. -M. Anton, S. Granville, A. Engel, S. V. Chong, M. Governale, U. Zülicke, A. G. Moghaddam, H. J. Trodahl, F. Natali, S. Vézian, and B. J. Ruck |
⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001) S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies |
⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies |
⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail |
⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck |
⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski |
⋄ Highly resistive epitaxial Mg-doped GdN thin films C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali |
⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier |
⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller,
T. Chassagne, M. Zielinski, M. Portail |
⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail |
⋄ Role of magnetic polarons in ferromagnetic GdN F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer |
⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001) A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel |
⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier |
⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier |
⋄ Fabrication and growth of GaN-based micro and nanostructures B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez |
⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail |
⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111) A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier,
A. Tiberj, T. Chassagne, M. Zielinski |
⋄ GaN nanocolumns on sapphire by ammonia-MBE: From self-organizedto site-controlled growth S. Vézian, B. Alloing and J. Zúñiga-Pérez |
⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez |
⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail |
⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies |
⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux |
⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first? A. Le Louarn, S. Vézian, F. Semond and J. Massies |
⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001) S. Pezzagna, S. Vézian, J. Brault, and J. Massies |
⋄ Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source S. Vézian, A. Le Louarn and J. Massies |
⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies |
⋄ Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects C. Morhain, M. Teisseire-Doninelli, S. Vézian, C. Deparis, P. Lorenzini, F. Raymond, J. Guion, G. Neu |
⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies |
⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride S. Vézian, F. Natali, F. Semond and J. Massies |
⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001) S. Vézian, F. Natali, F. Semond and J. Massies |
⋄ Origins of GaN(0001) Surface Reconstructions S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado |
⋄ Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers C. Morhain, M. Teisseire, S. Vézian, F. Vigué, F. Raymond, P. Lorenzini, J. Guion, G. Neu, J.P. Faurie |
⋄ 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie |
⋄ Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie |
⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties B. Damilano, N. Grandjean, S. Vézian, J. Massies |
⋄ Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie |
⋄ Surface morphology of GaN grown by molecular beam epitaxy S. Vézian, J. Massies, F. Semond, N. Grandjean |
⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau |
⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111) S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès |
Current contracts
Old contracts
⋄ Kiwi
Semiconductor based spintronics: can rare-earth nitrides and group II -nitrides get it together (Prestation de service)
Projet International CRHEA, Univ. Welligton (2014 - 2017)⋄ Superconducting and Computing
Thin-film preparation to support Magnetic Memory for Superconducting and Computing (CCR)
Projet International CRHEA, Univ. Victoria Wellington (NZ) (2019 - 2020)
Current supervisions
Old supervisions
PhD
Application of local probe microscopy to study the surface of GaN (0001)
PhD defended in october 2000 at CRHEA
Pierre Favard Prize awarded by the French Microscopy Society (2001)Curriculum
Bachelor and Master of Physics at the University of Nice Sophia Antipolis (1994-1995)
DEA physics and materials engineering from the University of Nice Sophia Antipolis (1996)
