Photo de Aimeric Courville
Name : Aimeric Courville
Status : Engineer
Grade : IECN
Team(s) : Opto SCR  AFM
: +33 4 93 95 4226


Manager of the vertical mount MOCVD in the Opto team (50%)
Responsible for Atomic Force Microscopy (AFM) activity in the SCR team (50%)


EPVOM, Nitrides of elements III (III-N)

Publications (20)

⋄ Low-loss GaN-on-insulator platform for integrated photonics

Opt. Express, 30,  20737, (2022) - Papier régulier

⋄ DUV LEDs based on AlGaN Quantum Dots

Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686,  116860T, (2021) - Article de conférence - invité

⋄ (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, and J.-Y. Duboz
AIP. Adv, 9,  055101, (2019) - Papier régulier

⋄ Intentional polarity conversion of AlN epitaxial layers by oxygen

N. Stolyarchuk, T. Markurt, A. Courville, K. March, J. Zúñiga-Pérez, P. Vennéguès & M. Albrecht
Sci Rep., 8,  14111, (2018) - Papier régulier

⋄ Internal quantum efficiency in polar and semipolar (11–22) In x Ga 1-x N/In y Ga 1-y N quantum wells emitting from blue to red

T.H. Ngo, N. Chery, P. Valvin, A. Courville, P. de Mierry, B. Damilano, P. Ruterana, B. Gil
Superlattices Microstruct., 113,  129-134, (2017) - Papier régulier

⋄ The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Courville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. MüLler-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana
J. Microsc., 268,3,  305-312, (2017) - Papier régulier

⋄ Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polarAlN epitaxial layers

N. Stolyarchuk, T. Markurt, A. Courville, K. March, O. Tottereau, P. Vennéguès, and M. Albrecht
J. Appl. Phys., 122,  155303, (2017) - Papier régulier

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation

B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies
J. Cryst. Growth, 477,  262, (2017) - Papier régulier

⋄ Ion-induced interdiffusion of surface GaN quantum dots

C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig
Nuclear Instruments and Methods in Physics Research B, 409,  107, (2017) - Article de conférence

⋄ Efficient second harmonic generation in low-loss planar GaN waveguides

M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25,  23035-23044, (2017) - Papier régulier

⋄ Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

T.H. Ngo, B. Gil, B. Damilano, P. Valvin, A. Courville, and P. de Mierry
J. Appl. Phys., 122,  063103, (2017) - Papier régulier

⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986,  89860Z, (2014) - Article de conférence

⋄ Polarity Control in Group-III Nitrides beyond Pragmatism

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht
Phys. Rev. Applied, 5,  054004, (2016) - Papier régulier

⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55,  05FG06, (2016) - Papier régulier

⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate

B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A, 212,  2297–2301, (2015) - Papier régulier

⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers

Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Phys. Stat. Sol. C, 3-4,  498-501, (2014) - Article de conférence

⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29,  084001, (2014) - Papier invité

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films

Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398,  23, (2014) - Papier régulier

⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers

M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès
Semicond. Sci. Tech., 28,  035006, (2013) - Papier régulier

⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range

A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110,  084318, (2011) - Papier régulier