Name : Marc Portail
Status :
Grade : IR1
Team(s) : SCR Analyse optique
☎ : +33 4 93 95 4202
Functions
Responsible for the SiC / sensors project in the Electro team (50%)
Responsible for the optics activity in the SCR team (50%)Activities
CVD, SiC
Photoluminescence, cathodoluminescence
Publications (99)
⋄ InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC Julien Bosch, Lucie Valera, Chiara Mastropasqua, Adrien Michon, Maud Nemoz, Marc Portail, Jesús Zúñiga-Pérez, Maria Tchernycheva, Blandine Alloing, Christophe Durand |
⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès |
⋄ Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing |
⋄ Oxygen Isotope Variations in Mg-rich Olivines from Type I Chondrules in Carbonaceous Chondrites G. Libourel, K. Nagashima, M. Portail, A.N. Krot |
⋄ AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T. Huong Ngo, M.A. Daher, M. Zielinski, D. Alquier, J.C. De Jaeger and Y. Cordier |
⋄ A New Approach in the Field of Hydrogen Gas Sensing Using MEMS Based 3C-SiC Microcantilevers P. Shanmugam, L. Iglesias, M. Portail, I. Dufour, D. Certon, D. Alquier, J.F. Michaud |
⋄ Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material M. Zielinski, M. Bussel, C. Moisson, H. Mank, S. Monooye, M. Portail, A. Michon, Y. Cordier |
⋄ Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride M. Zielinski, M. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier |
⋄ Designing SiC Based CMUT Structures: An Original Approach and Related Materials Issues M. Portail, S. Chenot, M. Ghorbanzadeh-Bariran, R. Khazaka, L. Nguyen, D. Alquier and J.F. Michaud |
⋄ Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon M. Zielinski, S. Monnoye, H. Mank, F. Torregrosa, G. Grosset, Y. Spiegel, M. Portail, A. Michon |
⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier |
⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet |
⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover |
⋄ Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre |
⋄ Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate R. Khazaka, E. Bahette, M. Portail, D. Alquier, J.-F. Michaud |
⋄ CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon |
⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier |
⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet |
⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression R. Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet |
⋄ Influence of aluminum incorporation on mechanical properties of 3C-SiC epilayers J.F. Michaud, M. Zielinski, J. Ben Messaoud, T. Chassagne, M. Portail, D. Alquier |
⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz |
⋄ Screening and engineering of colour centres in diamond T. Lühman,N. Raatz, R. John, M. Lesik, J. Rödiger, M. Portail, D. Wildanger, F. Kleibler, K. Nordlund, A. Zaitsev, J-F. Roch, A. Tallaire, J. Meijer and S. Pezzagna |
⋄ Chondrules as direct thermochemical sensors of solar protoplanetary disk gas G. Libourel, M. Portail |
⋄ A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations R. Dagher, E. Blanquet, C. Chatillon, T. Journot, M. Portail, L. Nguyen, Y. Cordier and A. Michon |
⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond |
⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies |
⋄ Ion-induced interdiffusion of surface GaN quantum dots C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig |
⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing3C-SiC membranes R. Khazaka, J.-F. Michaud, P. Vennéguès, D. Alquier, and M. Portail |
⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski,
T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon |
⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiCgrowth direction R. Khazaka, J.-F. Michaud, P. Vennéguès, L. Nguyen, D. Alquier, and M. Portail |
⋄ p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre |
⋄ 3C-SiC: from electronic to MEMS devices J.F. Michaud, M. Portail and D. Alquier |
⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001) R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud |
⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz |
⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud |
⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail |
⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud |
⋄ Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre |
⋄ Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier |
⋄ Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates N. Gogneau, A. Ben Gouider Trabelsi, M. Silly, M. Ridene, M. Portail, A. Michon, M. Oueslati, R. Belkhou, F. Sirotti, A. Ouerghi |
⋄ Investigation of Aluminium incorporation in 4H-SiC epitaxial layers R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet and H. Peyre |
⋄ 3C-SiC : new interest for MEMS devices J.F. Michaud, M. Portail, T. Chassagne, M .Zielinski and D. Alquier |
⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski |
⋄ Electrothermally driven high frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J.F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou and S. Gauthier |
⋄ Magnetoresistance of disordered graphene: From low to high temperatures B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault |
⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi |
⋄ Rotated domain network in graphene on cubic-SiC(001) A.N. Chaika, O.V. Molodtsova, A.A. Zakharov, D. Marchenko, J. Sánchez-Barriga, A. Varykhalov, S.V. Babenkov, M. Portail, M. Zielinski, B.E. Murphy, S.A. Krasnikov, O. Lübben, I.V. Shvets and V.Y. Aristov |
⋄ Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B.C. Camargo, Y. Kopelevich, J. Camassel, |
⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier |
⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller,
T. Chassagne, M. Zielinski, M. Portail |
⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail |
⋄ Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier |
⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001) A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel |
⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier |
⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier |
⋄ A graphene electron lens L. Gerhard, E. Moyen, T. Balashov, I. Ozerov, M. Portail, H. Sahaf, L. Masson, W. Wulfhekel, M. Hanbücken |
⋄ Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier |
⋄ A new approach for AFM cantilever elaboration with 3C-SiC S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier |
⋄ Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier |
⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail |
⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111) A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier,
A. Tiberj, T. Chassagne, M. Zielinski |
⋄ Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier |
⋄ Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si X. Song, J. Biscarrat; A. E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier |
⋄ Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail, D. Alquier |
⋄ Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier |
⋄ Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla |
⋄ Analytical model of stress relaxation in 3C-SiC layers on silicon M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier |
⋄ Electrical characterization of nitrogen implanted 3C-SiC by SSRM and c-TLM measurments X. Song, A.E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier |
⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier |
⋄ Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J.F. Michaud, M. Portail, and D. Alquier |
⋄ High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature A.E. Bazin, J.F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, and D. Alquier |
⋄ Micromachining of thin 3C-SiC films for mechanical properties investigation J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier |
⋄ Epitaxial graphene on 3C-SiC(111) pseudosubstrate: structural and electronic properties A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, F. Sirotti |
⋄ Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111) A. Ouerghi, R. Belkhou, M. Marangolo, M.G. Silly, S. El Moussaoui, M. Eddrief, L. Travers, M. Portail, F. Sirotti |
⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail |
⋄ Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne,
M. Portail, M. Zielinski, E. Collard, D. Alquier |
⋄ Epitaxial graphene on Cubic SiC(111)/Si(111) substrate A. Ouerghi, A. Kahouli , D. Lucot , M. Portail , L. Travers , J. Gierack , J. Penuelas , P. Jegou , A. Shukla , T. Chassagne , M. Zielinski |
⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne |
⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne |
⋄ Evidence of electrical activity of extended defects in 3C-SiC grown on Si X. Song, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier |
⋄ Recent advances in surface preparation of silicon carbide and other wide band gap materials M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A.E. Bazin, J.F. Michaud, M. Portail |
⋄ Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne, M. Zielinski |
⋄ Thermally induced surface reorganization of 3C-SiC(111) epilayersgrown on silicon substrates M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski |
⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski |
⋄ Advances in liquid phase conversion of (100) and (111) oriented Si wafers into self standing 3C-SiC M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel |
⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier |
⋄ Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry |
⋄ Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier |
⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz |
⋄ P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si A.E. Bazin, J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, J.F. Lecoq, E. Collard, D. Alquier |
⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier |
⋄ AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111) Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne |
⋄ Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne |
⋄ Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates M. Zielinski, M. Portail, T. Chassagne, Y. Cordier |
⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates M. Portail, M. Nemoz, M. Zielinski, T. Chassagne |
⋄ Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras; J. Camassel |
⋄ Low Specific Contact Resistance to 3C-SiC grown on (100) Si substrates A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard; D. Alquier |
⋄ Trends in nitrogen doping for 3C-SiC films on silicon M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras and J. Camassel |
⋄ Behaviour of the 3C-SiC(100) c(2×2) (C-terminated) and 3×2 (Si-rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures M. Portail, S. Saada, S. Delclos, J.C. Arnault, P. Soukiassian, P. Bergonzo, T. Chassagne, A. Leycuras |
Current supervisions
Old supervisions
Mahdis Ghorbanzadeh Bariran (2021) Barou Ane (2019)
Curriculum
