Name : Jean Massies
Status :
Grade : DR Emérite
Team(s) : Opto
☎ : +33 4 93 95 4214
Activities
Publications (243)
⋄ Why and how In composition fluctuations appear in InGaN ? Jean-Yves Duboz, Wanda Isnard, Jesus Zuniga-Perez, and Jean Massies |
⋄ DUV LEDs based on AlGaN Quantum Dots Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter,
Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil |
⋄ Potentialities of GaN-based microcavities in strong coupling regime at room temperature N. Ollier, F. Natali, D. Byrne, P. Disseix, A. Vasson, J. Leymarie, F. Semond, J. Massies |
⋄ Influence of high excitation on excitonic states in GaN/AlGaN quantum wells D-K. Nelsion, M-A. Jacobson, N. Grandjean, J. Massies, P. Bigenwald, A. Kavokin |
⋄ Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, J. Massies |
⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua |
⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil |
⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields |
⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields |
⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond |
⋄ Enhanced excitonic emission efficiency in porous GaN T.H. Ngo, B. Gil, T.V. Shubina, B. Damilano, S. Vezian, P. Valvin, J. Massies |
⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil |
⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil |
⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001) S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil |
⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate B. Damilano, S. Vézian, and J. Massies |
⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation B. Damilano, S. Vézian, and J. Massies |
⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies |
⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil |
⋄ Ultraviolet light emitting diodes using III-N quantum dots J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil |
⋄ Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses D. H. Rich, O. Moshe, B. Damilano and J. Massies |
⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil |
⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies |
⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001) S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies |
⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil |
⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies |
⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald |
⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source B. Damilano, J. Brault and J. Massies |
⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies |
⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil |
⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
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⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies |
⋄ Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies |
⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies |
⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies |
⋄ Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111) D.H. Rich, O. Moshe, B. Damilano, and J. Massies |
⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies |
⋄ Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111) O. Moshe, D. H. Rich, B. Damilano, and J. Massies |
⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry,
M. Leroux, A. Courville, O. Tottereau and J. Massies |
⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies |
⋄ Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111) O. Moshe, D.H. Rich, B. Damilano, and J. Massies |
⋄ Blue-green and white color tuning of monolithic light emitting diodes B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
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⋄ Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation D.H. Rich, O. Moshe, S. Birner , M. Povolotskyi , B. Damilano , J. Massies |
⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues,
B. Damilano, and J. Massies |
⋄ Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses O. Moshe, D.H. Rich, B. Damilano and J. Massies |
⋄ Influence of the mirrors in the strong coupling regime in planar GaN microcavities F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies |
⋄ Perturbing GaN/AlN quantum dots with uniaxial stressors Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
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⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies |
⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies |
⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies |
⋄ Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers M. Carras, G. Maisons. B. Simozrag, M. Garcia, O. Parillaud, J. Massies, X. Marcadet |
⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies |
⋄ AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies |
⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111) N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies |
⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux |
⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies |
⋄ Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers from 1.29 to 1.52 µm J.M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hughes, J.Y. Duboz, J. Massies |
⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies |
⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies |
⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli |
⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first? A. Le Louarn, S. Vézian, F. Semond and J. Massies |
⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies |
⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies |
⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies |
⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies |
⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001) S. Pezzagna, S. Vézian, J. Brault, and J. Massies |
⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies |
⋄ Polariton emission in GaN microcavities M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies |
⋄ InAs/AlAsSb based quantum cascade lasers X. Marcadet, C. Renard, M. Carras, M. Garcia, J. Massies |
⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli |
⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart |
⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies |
⋄ High doping level in Mg-doped GaN layers grown at low temperature A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean |
⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck |
⋄ AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification S. Boulay, S. Touati, A.A. Sar, V. Hoel, C. Gaquière, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, and J. Massies |
⋄ AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies |
⋄ Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies |
⋄ Diodes électroluminescentes blanches pour l'éclairage B. Damilano, J. Brault, A. Dussaigne, J. Massies |
⋄ Structural characterisation of Sb-based heterostructures by X-ray scattering methods C. Renard, O. Durand, X. Marcadet, J. Massies, O. Parillaud |
⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa |
⋄ On the determination of the structural parameters of GaxIn1-xAs/AlAsySb1-y superlattices by X-ray diffraction C. Renard, X. Marcadet, J. Massies |
⋄ Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau |
⋄ Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source S. Vézian, A. Le Louarn and J. Massies |
⋄ AlGaN/GaN HEMTs on (001) silicon substrates S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies |
⋄ In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler |
⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix |
⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies |
⋄ Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M. M. Hugues, B. Damilano, J.Y. Duboz, J. Massies |
⋄ Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J.Y. Duboz |
⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck |
⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies |
⋄ Monolithic white light emitting diodes with a broad emission spectrum A. Dussaigne, J. Brault, B. Damilano, J. Massies |
⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies |
⋄ Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells M. Hugues, B. Damilano, J.M. Chauveau, J.Y. Duboz and J. Massies |
⋄ InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications M. Richter, B. Damilano, J. Massies, and J.Y. Duboz |
⋄ Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck |
⋄ 1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck |
⋄ Optimum indium composition for (Ga,In)’(N,As) /GaAs quantum wells emitting beyond 1.5µm M. Hugues, B. Damilano, J.Y. Duboz, and J. Massies |
⋄ Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate M. Richter, B. Damilano, J.Y. Duboz, J. Massies, A. Wieck |
⋄ Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson |
⋄ Strong coupling of light with A and B excitons in GaN microcavities grown on silicon I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson |
⋄ Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau |
⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix |
⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie |
⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies |
⋄ Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies |
⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson |
⋄ Spectroscopy of a bulk GaN microcavity grown on Si(111) N. Ollier, F. Natali, D. Byrne, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond Et J. Massies |
⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie |
⋄ Electron mobility and transfer characteristics in AlGaN/GaN HEMTs Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies |
⋄ Surface morphology of AlN and size dispersion of GaN quantum dots A. Matsuse, N. Grandjean, B. Damilano Et J. Massies |
⋄ Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates C. Renard, X. Marcadet, J. Massies Et O. Parillaud |
⋄ High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies |
⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies |
⋄ Submicron periodic poling and chemical patterning of GaN S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies |
⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies |
⋄ Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE A. Hierro, J.M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies |
⋄ Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes J.M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sánchez, A. Guzmán, B. Damilano , J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, and A. Trampert |
⋄ (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, A. Hierro |
⋄ Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy A. Hierro, J.M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies |
⋄ Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, and A. Hierro |
⋄ Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, A. Hierro, J.M. Ulloa, and E. Calleja |
⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111) Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies |
⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie |
⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie |
⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies |
⋄ Phonon deformation potential in hexagonal GaN F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond and J. Massies |
⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies |
⋄ Electronic structure of wurtzite and zinc-blende AlN P. Jonnard, N. Capron, F. Semond, J. Massies, E. Martinez-Guerrero, H. Mariette |
⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies |
⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies |
⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies |
⋄ Polarity inversion of GaN(0001) by a high Mg doping S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies |
⋄ High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies |
⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies |
⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride S. Vézian, F. Natali, F. Semond and J. Massies |
⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001) S. Vézian, F. Natali, F. Semond and J. Massies |
⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies |
⋄ Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments A. Reale, G. Massari, A. Di-Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, J. Massies |
⋄ Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots A. Helman, K. Moumanis, M. Tchernycheva, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, F. Fossard, D. Le Si Dang, and B. Daudin |
⋄ Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies |
⋄ Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies |
⋄ Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies |
⋄ RBS studies of AlGaN/AlN Bragg reflectors L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie |
⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111) F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont |
⋄ Indium surface segregation in AlSb and GaSb C. Renard, X. Marcadet, J. Massies, I. Prévot, R. Bisaro, P. Galtier |
⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy |
⋄ Intraband spectroscopy of self-organized GaN/AlN quantum dots A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang |
⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies |
⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies |
⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano |
⋄ Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, J. Massies |
⋄ In surface segregation in InGaN/GaN quantum wells A. Dussaigne, B. Damilano, N. Grandjean, J. Massies |
⋄ Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements R. Aubry, J.C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.A. Diforte-Poisson, A. Romann, S.L. Delage |
⋄ Atomic structure of pyramidal defects in Mg-doped GaN P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart |
⋄ Origins of GaN(0001) Surface Reconstructions S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado |
⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage |
⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies |
⋄ AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies |
⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111) F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie |
⋄ High power AlGaN/GaN HEMTs on resistive silicon substrate V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies |
⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies |
⋄ Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies |
⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells J. Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies |
⋄ Exciton oscillator strength in GaN/AlGaN quantum wells M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies |
⋄ Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies |
⋄ Observation of magnetophotoluminescence from aGaN/Al/subx/Ga/sub1-x/N heterosjunction P.A. Shields, R.J. Nicholas, K. Takashina, N. Grandjean, J. Massies |
⋄ In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B. Damilano, J. Massies |
⋄ Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation S.P. Lepkowski, T. Suski, P. Perlin, V.Yu. Ivanov, M. Godlewski, N. Grandjean, J. Massies |
⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies |
⋄ Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures I. Prevot, B. Vinter, X. Marcadet, J. Massies |
⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Modelling and spectroscopy of GaN microcavities N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies |
⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies |
⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart |
⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, S. Delage |
⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage |
⋄ Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies |
⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies |
⋄ Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies |
⋄ Large built-in electric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells P. Perlin, T. Suski, S.P. Lepkowski, H. Teisseyre, N. Grandjean, J. Massies |
⋄ Potentialities of GaN-based microcanivities grown on silicon substrates N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson |
⋄ Micro-Raman study of wurtzite AlN layers grown on Si(111) J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, F. Semond, J. Massies |
⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies |
⋄ Nuclear microprobe analysis of GaN bases light emitting diodes L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz |
⋄ Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux |
⋄ Extremely sharp dependence of the exciton oscillator strength on quantum well width in the GaN/AlxGa1-xN system : the polarization field effect M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies |
⋄ Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies |
⋄ Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies |
⋄ Magneto-photoluminescence of AlGaN/GaN quantum wells P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies |
⋄ Impact ionization of excitons in an electric field in GaN D. Nelson, B. Gil, M.A. Jacobson, V.D. Kagan, N. Grandjean, B. Beaumont, J. Massies, P. Gibart |
⋄ Magneto-photoluminescence spectroscopy of GaN/AlGaN quantum wells : valence band reordering and excitonic binding energies P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies |
⋄ Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN A. Bell, I. Harrison, D. Karakakis, E.C. Larkins, J.M. Hayes, M. Kuball, N. Grandjean, J. Massies |
⋄ Piezoelectric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells S. P. Lepkowski, T. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies |
⋄ Direct signature of strained GaN quantum dots by Raman scattering J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies |
⋄ Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies |
⋄ In-situ etching at InGaAs/GaAs quantum well interfaces E. Chirlias, J. Massies, J.L. Guyaux, H. Moisan, J.C. Garcia |
⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ Photoconductance measurements and Stokes shift in InGaN alloys J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies |
⋄ Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
⋄ Modeling of absorption and emission spectra of InGaN layers grown by MBE L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies |
⋄ Optical properties of self-assembled InGaN/GaN quantum dots T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies |
⋄ Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies |
⋄ Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, J. Massies |
⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ Dielectric microcavity in GaN/Si J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean |
⋄ CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
⋄ Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells B. Damilano, N. Grandjean, C. Pernot, J. Massies |
⋄ Group-III nitride quantum heterostructures grown by molecular beam epitaxy N. Grandjean, B. Damilano, J. Massies |
⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties B. Damilano, N. Grandjean, S. Vézian, J. Massies |
⋄ GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxy N. Grandjean, J. Massies, I. Grzegory, S. Porowski |
⋄ High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy F. Semond, P. Lorenzini, N. Grandjean, J. Massies |
⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible spectrum B. Damilano, N. Grandjean, J. Massies |
⋄ Surface morphology of GaN grown by molecular beam epitaxy S. Vézian, J. Massies, F. Semond, N. Grandjean |
⋄ Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111) F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson |
⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J. |
⋄ Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies |
⋄ Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures E. Boroviskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjean, B. Beaumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski |
⋄ High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC and sapphire substrates W. Knap, E. Borovitskaya, M.S. Shur, R. Gaska, G. Karczewski, B. Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J.W. Yang, X. Hu, G. Simin, M. Asif Khan, C.Skierbiszewski, P. Prystawko, I. Grzegory, S. Porowski |
⋄ Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies |
⋄ High electron mobility in AlGaN/GaN heterostructures grown on bulk substrates E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, M.S. Asif Khan, M.S. Shur, R. Gaska, D. Maude |
⋄ Signature of GaN-AlN quantum dots by nonresonant Raman scattering J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies |
⋄ Surface kinetics of GaN evaporation and growth by molecular beam epitaxy S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano |
⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies |
⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies |
⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald |
⋄ Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures J. Gleise, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, N. Grandjean, J. Massies |
⋄ Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies, |
⋄ From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies |
⋄ GaN and InGaN quantum dots grown by MBE : from UV to red light emission N. Grandjean, B. Damilano, J. Massies |
⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht |
⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau |
⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie |
⋄ Growth of gallium nitride epitaxial layers and applications B. Beaumont, P. Gibart, N. Grandjean, J. Massies |
⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111) S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès |
⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie |
⋄ GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range B. Damilano, N. Grandjean, J. Massies, F. Semond |
⋄ Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots N. Grandjean, B. Damilano, J. Massies S. Dalmasso |
Current contracts
Old contracts
Current supervisions
Old supervisions
YuanYang Xia (PhD Student) (2013) Abdelkarim Kahouli (PhD Student) (2012) Nasser Kriouche (PhD Student) (2011) Arnaud Le Louarn (PhD Student) (2006) Sébastien Pezzagna (PhD Student) (2005) Franck Natali (PhD Student) (2003) Magali Mesrine (PhD Student) (1999)
Post-doc
PhD
Curriculum
