Name : Mohamed Al Khalfioui
Status : Lecturer
Grade : MC
Team(s) : Nano
☎ : +33 4 93 95 4215
Activities
Publications (33)
⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN J. D. Miller, H. J. Trodahl1, M. Al Khalfioui, S. Vézian, and B. J. Ruck |
⋄ Descriptor engineering in machine learning regression of electronic structure properties for 2D materials M.T. Dau, M. Al Khalfioui, A. Michon, A. Reserbat-Plantey, S. Vézian and P. Boucaud |
⋄ Enhanced Sm spin projection in GdxSm1−xN J. D. Miller, J. F. McNulty, B. J. Ruck, M. Al Khalfioui, S. Vézian, M. Suzuki, H. Osawa, N. Kawamura, and H. J. Trodahl |
⋄ DUV LEDs based on AlGaN Quantum Dots Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter,
Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil |
⋄ Epitaxial Zn3N2 thin films by molecular beam epitaxy:Structural, electrical and optical properties P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, H. Rotella, M. Hugues, M. Grundmann, and J. Zúñiga-Pérez |
⋄ UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots J. Brault, M. Al Khalfioui, S. Matta, T.H. Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil |
⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras |
⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li |
⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil |
⋄ Role of In in hydrogenation of N-related complexes in GaInNAs T.Mou, S.Li, C.R.Brown, V.R.Whiteside, K.Hossain, M.Al Khalfioui, M.Leroux, I.R.Sellers, B.Wang |
⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond |
⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil |
⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil |
⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers |
⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali |
⋄ Ultraviolet light emitting diodes using III-N quantum dots J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil |
⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali |
⋄ High temperature electrical transport study of Si-doped AlN S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux,
B. Damilano, J. Brault |
⋄ Improved performance of GaInNAs solar cell after UV-activated hydrogenation M. Fukuda, V. R. Whiteside, J. C. Keay, M. Al Khalfioui, M. Leroux, K. Hossain, T. D. Golding, I. R. Sellers |
⋄ Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells M. Fukuda, V.R. Whiteside, J.C. Keay, Matthew B. Johnson, M. Al Khalfioui, M. Leroux, K. Hossain, T.D. Golding, I.R. Sellers |
⋄ Improved performance in GaInNAs solar cells by hydrogen passivation M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui |
⋄ Photoluminescence study of Be-acceptors in GaInNAs epilayers Y. Tsai, B. Barman, T. Scrace, M. Fukuda, V. R. Whiteside, I. R. Sellers, M. Leroux, M. Al Khalfioui, and A.
Petrou |
⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001) S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies |
⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil |
⋄ Highly resistive epitaxial Mg-doped GdN thin films C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali |
⋄ Probing the nature of carrier localization in GaInNAs epilayers by optical methods Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou |
⋄ Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy D. Taïnoff, M. Al-Khalfioui, C. Deparis, B. Vinter, M. Teisseire, C. Morhain, and J.M. Chauveau |
⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues,
B. Damilano, and J. Massies |
⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies |
⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies |
⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies |
⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck |
⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies |
Current contracts
⋄ Croissant
Croissance et caractérisation de matériaux TMDs (AAP REGION - GENERAL)
Projet Régional UCA, CRHEA (2021 - 2023)Old contracts
Current supervisions
Old supervisions
Fabien Roze (Stagiaire) (2012)
Post-doc
PhD
Curriculum
