Name : Mohamed Al Khalfioui
Status : Lecturer
Grade : MC
Team(s) : Nano
☎ : +33 4 93 95 4215
Activities
Publications (38)
⋄ Investigation of MoS2 growth on GaN/sapphire substrate using molecular beam epitaxy Mohamed Al Khalfioui, Minh Tuan Dau, Zineb Bouyid, Ileana Florea, Philippe Vennéguès, Julien Brault, Stéphane Vézian, Adrien Michon, Yvon Cordier, Philippe Boucaud |
⋄ Low-Temperature Electrical Transport Properties of Molecular Beam Epitaxy-Grown Mg-Doped GaN Subjected to a High-Temperature Annealing Process Leszek Konczewicz, Sandrine Juillaguet, Marcin Zajac, Elzbieta Litwin-Staszewska, Mohamed Al Khalfioui, Mathieu Leroux, Benjamin Damilano, Julien Brault, Sylvie Contreras |
⋄ Van der Waals Epitaxy of Weyl-Semimetal Td‑WTe2 Alexandre Llopez, Frédéric Leroy, Calvin Tagne-Kaegom, Boris Croes, Adrien Michon, Chiara Mastropasqua, Mohamed Al Khalfioui, Stefano Curiotto, Pierre Müller, Andrés Saùl, Bertrand Kierren, Geoffroy Kremer, Patrick Le Fèvre, François Bertran, Yannick Fagot-Revurat, and Fabien Cheynis |
⋄ Perspectives for III-nitride photonic platforms Philippe Boucaud, Nagesh Bhat, Maksym Gromovyi, Moustafa El Kurdi, Antoine Reserbat-Plantey, Minh Tuan Dau, Mohamed Al Khalfioui, Blandine Alloing, Benjamin Damilano and Fabrice Semond |
⋄ Artificial Optoelectronic Synapse with Nanolayered GaN/AlN Periodic Structure for Neuromorphic Computing Xiayang Hua, Jiyuan Zheng, Xu Han, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Lin Gan, Mohamed Al Khalfioui, Julien Brault, Lai Wang |
⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN J. D. Miller, H. J. Trodahl1, M. Al Khalfioui, S. Vézian, and B. J. Ruck |
⋄ Descriptor engineering in machine learning regression of electronic structure properties for 2D materials M.T. Dau, M. Al Khalfioui, A. Michon, A. Reserbat-Plantey, S. Vézian and P. Boucaud |
⋄ Enhanced Sm spin projection in GdxSm1−xN J. D. Miller, J. F. McNulty, B. J. Ruck, M. Al Khalfioui, S. Vézian, M. Suzuki, H. Osawa, N. Kawamura, and H. J. Trodahl |
⋄ DUV LEDs based on AlGaN Quantum Dots Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter,
Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil |
⋄ Epitaxial Zn3N2 thin films by molecular beam epitaxy:Structural, electrical and optical properties P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, H. Rotella, M. Hugues, M. Grundmann, and J. Zúñiga-Pérez |
⋄ UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots J. Brault, M. Al Khalfioui, S. Matta, T.H. Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil |
⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras |
⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li |
⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil |
⋄ Role of In in hydrogenation of N-related complexes in GaInNAs T.Mou, S.Li, C.R.Brown, V.R.Whiteside, K.Hossain, M.Al Khalfioui, M.Leroux, I.R.Sellers, B.Wang |
⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond |
⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil |
⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil |
⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers |
⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali |
⋄ Ultraviolet light emitting diodes using III-N quantum dots J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil |
⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali |
⋄ High temperature electrical transport study of Si-doped AlN S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux,
B. Damilano, J. Brault |
⋄ Improved performance of GaInNAs solar cell after UV-activated hydrogenation M. Fukuda, V. R. Whiteside, J. C. Keay, M. Al Khalfioui, M. Leroux, K. Hossain, T. D. Golding, I. R. Sellers |
⋄ Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells M. Fukuda, V.R. Whiteside, J.C. Keay, Matthew B. Johnson, M. Al Khalfioui, M. Leroux, K. Hossain, T.D. Golding, I.R. Sellers |
⋄ Improved performance in GaInNAs solar cells by hydrogen passivation M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui |
⋄ Photoluminescence study of Be-acceptors in GaInNAs epilayers Y. Tsai, B. Barman, T. Scrace, M. Fukuda, V. R. Whiteside, I. R. Sellers, M. Leroux, M. Al Khalfioui, and A.
Petrou |
⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001) S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies |
⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil |
⋄ Highly resistive epitaxial Mg-doped GdN thin films C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali |
⋄ Probing the nature of carrier localization in GaInNAs epilayers by optical methods Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou |
⋄ Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy D. Taïnoff, M. Al-Khalfioui, C. Deparis, B. Vinter, M. Teisseire, C. Morhain, and J.M. Chauveau |
⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantumdot light-emitting diodes M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues,
B. Damilano, and J. Massies |
⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies |
⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies |
⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies |
⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck |
⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies |
Current contracts
⋄ MoirePlusPlus
Ingéniérie du couplage lumière-matière dans des micros cavités optiques à base de TMD : des excitons libres aux superréseaux de Moiré (ANR)
Projet National CNRS (2023 - 2027)Old contracts
⋄ Croissant
Croissance et caractérisation de matériaux TMDs (AAP REGION - GENERAL)
Projet Régional UCA, CRHEA (2021 - 2023)
Current supervisions
Zineb Bouyid (PhD Student) Old supervisions
Fabien Roze (Stagiaire) (2012)
Post-doc
PhD
Curriculum
