Photo de Denis Lefebvre
Name : Denis Lefebvre
Status :
Grade : IR2
Team(s) : Opto   
: +33 4 93 95 4205

Functions


Activities


MBE, ZnO

Publications (68)


⋄ Influence of dynamic morphological modifications of atom probe specimens on the intensity of their photoluminescence spectra

E. M. Weikum, P. Dalapati, G. Beainy, J. M. Chauveau, M. Hugues, D. Lefebvre, J. Houard, A. Vella, and L. Rigutti
JOSA B, 40,  1633, (2022) - Papier régulier

⋄ Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

R. Aristegui, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, I. Paradisanos, C. Robert, X. Marie, B. Urbaszek, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 108,  125421, (2023) - Papier régulier

⋄ Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, S. Chenot, Y. Cordier, and B. Damilano
Phys. Rev. B, 106,  035429, (2022) - Papier régulier

⋄ Exciton ionization induced by intersubband absorption in nonpolar ZnO-ZnMgO quantum wells at room temperature

A. Jollivet, P. Quach, M. Tchernycheva, R. Ferreira, E. Di Russo, L. Rigutti, B. Vinter, N. le Biavan, D. Lefebvre, M. Hugues, J. M. Chauveau, and F. H. Julien
Phys. Rev. B, 105,  195143, (2022) - Papier régulier

⋄ Use of interface phonon-polaritons for the alloy determination in ZnO/(Zn,Mg)O multiple quantum wells

M.Montes Bajo, J.Tamayo-Arriola, N.Le Biavan, E.Martínez Castellano, D.Lefebvre, M.Hugues, J.-M.Chauveau, A.Hierro
Appl. Surf. Sci., 567,  150816, (2021) - Papier régulier

⋄ Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem

L. Rigutti, L. Mancini, E. Di Russo, I. Blum, F. Moyon, W. Lefebvre, D. Blavette, F. Vurpillot, E. Giraud, J.F. Carlin, R. Butté, N. Grandjean, N. Gogneau, L. Largeau, F. H. Julien, M. Tchernycheva, J.M. Chauveau and M. Hugues
Microsc. Microanal., 22,  650 - 651, (2016) - Papier régulier

⋄ Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

F. Chiaruttini, T. Guillet, C. Brimont, D. Scalbert, S. Cronenberger, B. Jouault, P. Lefebvre, B. Damilano, and M. Vladimirova
Phys. Rev. B, 103,  045308, (2021) - Papier régulier

⋄ Terahertz Intersubband Electroluminescence from Nonpolar m-Plane ZnO Quantum Cascade Structures

B. Meng, B. Hinkov, N. Le Biavan, H.T. Hoang, D. Lefebvre, M. Hugues, D. Stark, M. Franckié, A. Torres-Pardo, J. Tamayo-Arriola, M. M. Bajo, A. Hierro, G. Strasser, J. Faist*, and J.-M. Chauveau*
ACS Photonics, 8,  343–349, (2021) - Papier régulier

⋄ Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe

E. Di Russo, P. Dalapati, J. Houard, L. Venturi, I. Blum, S. Moldovan, N. Le Biavan, D. Lefebvre, M. Hugues, J.-M. Chauveau, D. Blavette, B. Deconihout, A. Vella, F. Vurpillot, and L. Rigutti
Nano Lett., 20,  8733, (2020) - Papier régulier

⋄ Observation of Intersubband Absorption in ZnO Coupled Quantum Wells

B. Meng, J. Tamayo-Arriola, N. Le Biavan, M. Montes Bajo, A. Torres-Pardo, M. Hugues, D. Lefebvre, A. Hierro, J.-M. Chauveau, J. Faist
Phys. Rev. Applied, 054007,  12, (2019) - Papier régulier

⋄ Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation

P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, J. Massies
Phys. Rev. B, 69,  35307, (2004) - Papier régulier

⋄ Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory

R. Bardoux, T.y Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77,  235315, (2008) - Papier régulier

⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

F. Chiaruttini, T. Guillet, C Brimont, B. Jouault, P. Lefebvre, J. Vives, S. Chenot, Y. Cordier, B. Damilano, and M. Vladimihristellerova
Nano Lett., 19,  4911, (2019) - Papier régulier

⋄ Breaking the Intersubband Selection Rules for Absorption with Quantum Wells: Light Polarization Sensitivity under Normal Incidence

M. Montes Bajo, J. Tamayo-Arriola, N. Le Biavan, J.M. Ulloa, P. Vennéguès, D. Lefebvre, M. Hugues, J.-M. Chauveau, A. Hierro
Phys. Rev. Applied, 10,  034022, (2018) - Papier régulier

⋄ Ga-doping of nonpolar m-plane ZnMgO with high Mg contents

J.Tamayo-Arriola, M.Montes Bajo, N. Le Biavan, D.Lefebvre, A.Kurtz, J.M.Ulloa, M.Hugues, J.M.Chauveau, A.Hierro
J. Alloys and Comp., 766,  436, (2018) - Papier régulier

⋄ Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

E. Di Russo, F. Moyon, N. Gogneau, L. Largeau, E. Giraud, J.F. Carlin, N. Grandjean, J.M. Chauveau, M. Hugues, I. Blum, W. Lefebvre, F. Vurpillot, D. Blavette, and L. Rigutti
J. Phys. Chem. C, 122,  16704, (2018) - Papier régulier

⋄ Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions

N. Le Biavan, M. Hugues, M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, D. Lefebvre, Y. Cordier, B. Vinter, F.H. Julien, A. Hierro, and J.M. Chauveau
Appl. Phys. Lett., 111,  231903, (2017) - Papier régulier

⋄ Three-dimensional atomic-scale investigation of ZnO-MgZnO m-plane heterostructures

E. Di Russo, L. Mancini, F. Moyon, S. Moldovan, J. Houard, F. H. Julien, M. Tchernycheva, J.M. Chauveau, M.Hugues, G. Da Costa, I. Blum, W. Lefebvre, D. Blavette, and L. Rigutti
Appl. Phys. Lett., 111,  032108, (2017) - Papier régulier

⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth, 433,  165-171, (2016) - Papier régulier

⋄ Transport of indirect excitons in ZnO quantum wells

Y.Y. Kuznetsova, F. Fedichkin, P. Andreakou, E.V. Calman, L.V. Butov, P.Lefebvre, T. Bretagnon, T. Guillet, M. Vladimirova, C. Morhain,and J.M. Chauveau
Opt. Lett., 40,  3667, (2015) - Papier régulier

⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties

P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 252,  1096, (2015) - Papier régulier

⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104,  071912, (2014) - Papier régulier

⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD

A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742,  117, (2013) - Article de conférence

⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113,  203501, (2013) - Papier régulier

⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)

A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720,  625, (2012) - Article de conférence

⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720,  621, (2012) - Article de conférence

⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349,  27, (2012) - Papier régulier

⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain

A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9,  175-178, (2011) - Article de conférence

⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)

A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711,  253, (2012) - Article de conférence

⋄ Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells

T. Guillet, T. Bretagnon, T. Taliercio, P. Lefebvre, B. Gil, C. Morhain, X.D. Tang
Superlattice Microst, 41,  352, (2007) - Article de conférence

⋄ Barrier composition dependence of the internal electric field in ZnO/Zn1-xMgxO quantum wells

T. Bretagnon, P. Lefebvre, T. Guillet, T. Taliercio, B. Gil, C. Morhain
Appl. Phys. Lett., 90,  201912, (2007) - Papier régulier

⋄ Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

T. Bretagnon, P. Lefebvre, P. Valvin, B. Gil, C. Morhain, X.D. Tang
J. Cryst. Growth, 287,  12, (2006) - Article de conférence

⋄ Spin-exchange interaction in ZnO-based quantum wells

B. Gil, P. Lefebvre, T. Bretagnon, T. Guillet, J.A. Sans, T. Taliercio, and C. Morhain
Phys. Rev. B, 74,  153302, (2006) - Papier régulier

⋄ Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots: Role of the electron-hole dipole

R. Bardoux, T. Guillet, P. Lefebvre, F. Semond et al.
Physics of semiconductors, B893,  941-942, (2007) - Article de conférence

⋄ Photoluminescence of single GaN/AlN quantum dots on Si(111): spectral diffusion effects

R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, F. Semond
Phys. Rev. B, 74,  195319, (2006) - Papier régulier

⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C, 1-3,  200983426, (2010) - Article de conférence

⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies
Phys. Stat. Sol. (b), 246,  845-845, (2009) - Papier régulier

⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1,  121101, (2008) - Papier régulier

⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range

J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys., 105,  033519, (2009) - Papier régulier

⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies
Appl. Phys. Lett., 92,  051911, (2008) - Papier régulier

⋄ Composition analysis of semiconductor quantum wells by energy filtered convergent beam electron diffraction

D. Jacob, J.M. Zuo, A. Lefebvre, Y. Cordier
Ultramicroscopy, 108,  358–366, (2008) - Papier régulier

⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots

M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck
Jpn. J. Appl. Phys, 46,  12-16, (2007) - Papier régulier

⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11),  113304-1-4, (2006) - Papier régulier

⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots

R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1,  183-186, (2007) - Article de conférence

⋄ Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells

C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis
Phys. Rev. B, 72 (24),  241305-4, (2005) - Papier régulier

⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (b), 241, Issue 12,  2779-2782, (2004) - Article de conférence

⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies
J. Appl. Phys., 96,  180, (2004) - Papier régulier

⋄ From GaAs:N to oversaturated GaAsN : Analysis of the band-gap reduction

T. Talierco, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.A. Pinault, M. Laügt, and E. Tournié
Phys. Rev. B, 69,  073303, (2004) - Papier régulier

⋄ Isoelecrtonic traps in heavily doped GaAs:(In,N)

R. Intartaglia, T. Talierco, P. Valvin, B. Gil, T. Bretagnon, P. Lefebvre, M.A. Pinault, E. Tournié
Phys. Rev. B, 68,  235202, (2003) - Papier régulier

⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells

A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Physica E, 17,  64, (2003) - Papier régulier

⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Stat. Sol. (c), 0(7),  2666-2669, (2003) - Article de conférence

⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation

T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Rev. B, 68,  205301, (2003) - Papier régulier

⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems

A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Mater. Res. Soc. Symp. Proc., 743,  L5.5, (2003) - Article de conférence

⋄ Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy

J.M. Chauveau, Y. Androussi, A. Lefebvre, J. Di Persio, and Y. Cordier
J. Appl. Phys., 93, Issue 7,  4219-4225, (2003) - Papier régulier

⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes

S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (a), 190,  149, (2002) -

⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes

S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies
Appl. Phys. Lett., 80,  428, (2002) - Papier régulier

⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect

P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (b), 228,  65, (2001) - …

⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78,  1538, (2001) - Papier régulier

⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy

P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78,  1252, (2001) - Papier régulier

⋄ Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells

M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Mat. Sci. Eng. B, 82,  140, (2001) - …

⋄ Optical properties of self-assembled InGaN/GaN quantum dots

T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82,  22, (2001) - …

⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields

M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183,  61, (2001) - …

⋄ CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia

T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Sol. Stat. Comm., 117,  445, (2001) - Papier régulier

⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red

Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J.
Mater. Res. Soc. Symp. Proc., 639,  G10.1.1-11, (2000) - Article de conférence - invité

⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots

A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 180,  375, (2000) - …

⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells

M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 180,  127, (2000) - …

⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures

M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald
Phys. Stat. Sol. (a), 178,  101, (2000) - …

⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht
J. Appl. Phys., 88,  183, (2000) - Papier régulier

Curriculum