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Main avec index What do A1, A2, A3 and B codes mean after a publication number
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  • An A1 publication is a european patent publication published together with the search report
  • When this application is published without the search report, it is an A2 document
  • The search report is published later as A3 document
  • The issued patent is published as B document
  • A European patent translation is published as T document

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EP4174912A1
03/05/2023

⋄ Method of vertical growth of III-V material

Matthew Charles, Yvon Cordier
US2023136949A1, FR3128818(A1)

EP4116766AA
11/01/2023

⋄ Fast active beam-steering device and apparatus operating in transmission mode

Christina Kyrou, Patrice Genevet, Samira Khadir, Renato Juliano Martins

EP4071515A1
12/10/2022

⋄ System and method for imaging in the optical domain

Patrice Genevet, Renato Juliano Martins, Samira Khadir, Massimo Giudici

EP 4 020 604 A1
29/06/2022

⋄ PROCÉDÉ DE RÉALISATION D’UN DISPOSITIF OPTOÉLECTRONIQUE COMPRENANT DES MICRO-LEDS À BASE DE NITRURE DU GROUPE III

FEUILLET Guy, TEMPLIER François, ZUNIGA PEREZ Jesus, VENNEGUES Philippe

EP3311394 (B1)
19/01/2022

⋄ Method for obtaining on a cristalline substrate a semi-polar loyer of III-nitride

M. El Khoury Maroun, G. Feuillet, P. Vennéguès, J. Zúñiga-Pérez
FR3037711 (A1), FR3037713 (A1), FR3037713 (B1), JP2018520977 (A), US11139167 (B2), US2018182622 (A1), WO2016202899 (A1)

US11139167
05/10/2021

⋄ Growth of semipolar GaN on facetted silicon pilar-like structures for Led

J. Zúñiga-Pérez, P. Vennéguès, G. Feuillet

WO2021160664A1
19/08/2021

⋄ PROCEDE DE FABRICATION DE NANOSTRUCTURES DE NITRURE D'ALUMINIUM ET DE GALLIUM (AlGaN)

BRAULT, Julien; AL KHALFIOUI, Mohamed; MASSIES, Jean; GIL, Bernard
EP4104203A1; FR3107051A1; FR3107051B1

WO2020254695 (A1)
24/12/2020

⋄ Process for producing nitride tiles each intended to form an electronic or optoelectronic device

G. Feuillet, B. Alloing, H. Bono, R. Dagher, J. Zúñiga-Pérez, M. Charles, J. Buckley, R. Escoffier
FR3097681 (A1), FR3097681 (B1)

FR3091022 (B1)
11/12/2020

⋄ Method for manufacturing optoelectronic structures provided with coplanar light emitting diodes

G.Feuillet, B. Damilano, J.Y. Duboz, C. Largeron
FR3091022 (A1), CN111354757 (A), EP3671842 (A1), US2020203556 (A1)

FR3093862 (A1)
18/09/2020

⋄ Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN

D. Sotta, M. Rozhavskaia, B. Damilano
CN113272972 (A), EP3939097 (A1), TW202101784 (A), WO2020182457 (A1)

US2019285547 (A1)
19/09/2019

⋄ Device and method for providing illumination for total-internal-reflection fluorescence microscopy using opaque mask

A. Giacomotti, M. Brunstein, A. Cattoni, S. Bouchoule, B. Damilano, D. Lefebvre
EP3465320 (A1), EP3465320 (B1), FR3051921 (A1), FR3051921 (B1), JP2019522814 (A), JP6918023 (B2), US11047799 (B2), WO2017207360 (A1)

US2018327929 (A1)
15/11/2018

⋄ Method for producing nanostructures

S. Vézian, B. Damilano, J. Brault
CN107849735 (A), EP3307927 (A1), FR3037341 (A1), JP2018526230 (A), JP6772192 (B2), KR20180017124 (A), US11085130 (B2), WO2016198341 (A1)

FR3031833 (B1)
05/10/2018

⋄ Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure

F. Semond, J. Massies, E. Frayssinet
CN107408492 (A), EP3248212 (A1), FR3031833 (A1), US2018012753 (A1), JP2018509754 (A), KR20170105598 (A), WO2016116713 (A1)

FR3031834 (B1)
05/10/2018

⋄ Production of a semiconductor support based on group III nitrides

F. Semond, J. Massies, E. Frayssinet
FR3031834 (A1), CN107251189 (A), EP3248213 (A1), JP2018509755 (A), KR20170102022 (A), US2018019120 (A1), WO2016116715 (A1)

US10043871 (B1)
07/08/2018

⋄ Rare earth nitride and group-III-nitride structure or device

F. Natali, S. Vézian

FR3051921 (B1)
01/06/2018

⋄ Device and method for providing illumination for total-internal-reflection fluorescence microscopy

A. Giacomotti, M. Brunstein, A Cattoni, S. Bouchoule, B. Damilano, D. Lefebvre
WO2017207360 (A1)

FR3059147 (A1)
25/05/2018

⋄ Semiconductor heterostructures with wurtzite-type structure on ZnO substrate

J. Brault, M. Al Khalfioui, B. Damilano, J.M. Chauveau
WO201809150(A1)

FR3047841 (B1)
25/05/2018

⋄ Electromechanical transducer based on doped gallium nitride

M. Faucher, Y. Cordier
FR3047841 (A1), WO2017140664 (A1)

FR3049946 (B1)
13/04/2018

⋄ Process for fabricationg a micromechanical structure made of silicon carbide including at least one cavity

R. Khazaka, M. Portail, J-F. Michaud, D. Alquier
FR3049946 (A1), WO2017174709 (A1)

FR3032064 (B1)
09/03/2018

⋄ Optoelectronic device and method for manufacturing same

J. Zúñiga-Pérez, S. Scaringella, B. Amstatt
EP3248227 (A1), FR3032064 (A1), WO2016116703 (A1), US2018277717 (A1)

FR3044464 (B1)
09/02/2018

⋄ Method for obtaining a semi-polar nitride layer on a crystalline substrate

G. Feuillet, M. Khoury, P. Vennéguès, J. Zúñiga-Pérez
KR20180088878 (A), FR3044464 (A1), WO2017093359 (A1)

FR3017242 (B1)
01/09/2017

⋄ Vertical Gallium Nitride Schottky diode

Y. Arnaud, D. Alquier, Y. Cordier
CN104821341 (A), CN204516775 (U), FR3017242 (A1), US2015221782 (A1)

FR3019380 (B1)
01/09/2017

⋄ Semiconducting pixel, matrix of such pixels, semiconductiong structure for the production of such pixels and their methods of fabrication

B. Damilano, J-Y. Duboz
EP3127159 (A1), FR3019380 (A1), US2017213868 (A1), JP2017513225 (A), KR20160139004 (A), WO2015150281 (A1)

FR3048002 (A1)
25/08/2017

⋄ Method making it possible to obtain a semi-polar nitride layer on a crystalline substrate

G. Feuillet, M. Khoury, P. Vennéguès, J. Zúñiga-Pérez
US2018182622 (A1)

FR3038714 (B1)
25/08/2017

⋄ Multichannel spectrometer equipped with a photosensitive layer with a lateral composition gradient

J-Y. Duboz
FR3038714 (A1), WO2017005511 (A1)

FR3037713 (B1)
09/06/2017

⋄ Method making it possible to obtain on a crystalline substrate a semipolar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminum (Al)

M. Khoury, G. Feuillet, P. Vennéguès, J. Zúñiga-Pérez
EP3311394 (A1), FR3037711 (A1), FR3037713 (A1), US2018182622 (A1), JP2018520977 (A), WO2016202899 (A1)

CN106460229 (A)
22/02/2017

⋄ Doped rare earth nitride materials and devices comprising same

F. Natali, B.J. Ruck, H.J. Trodahl, S. Vézian
EP3127146 (A2), EP3127146 (A4), JP2017511294 (A), KR20170005409 (A), US2017022632 (A1), WO2015152737 (A2), WO2015152737 (A3)

FR3037341 (A1)
16/12/2016

⋄ Method for producing nanostructures

S. Vézian, B. Damilano, J. Brault
EP3307927 (A1), CN107849735 (A), JP2018526230 (A), KR20180017124 (A), WO2016198341 (A1)

FR3003402 (B1)
04/11/2016

⋄ Monolithic light-emitting device

B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, P. De Mierry, S. Chenot, J. Massies
CN105122475 (A), CN105122475 (B), EP2973754 (A1), FR3003402 (A1), US2016043272 (A1), JP2016513878 (A), WO2014140118 (A1)

FR3001334 (B1)
06/05/2016

⋄ Method for the production of monilithic white diodes

G. Nataf, P. de Mierry, S. Chenot
CN105051917 (A), CN105051917 (B), EP2948987 (A1), FR3001334 (A1), US2016005918 (A1), JP2016508668 (A), US9728673 (B2), WO2014114731 (A1)

FR3021454 (A1)
27/11/2015

⋄ Method for manufacturing a semiconductor material including a semipolar III-Nitrie layer

P. de Mierry, F. Tendille, P. Vennéguès
EP3146558 (A1), US2017092482 (A1), JP2017522721 (A), WO2015177220 (A1)

FR2977260 (B1)
19/07/2013

⋄ Method for manufacturing a thick epitaxial layer of Gallium Nitride ona silicon or similar substrate and layer obtained using said method

D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, Y. Cordier
CN103828019 (A), CN103828019 (B), EP2727133 (A1), FR2977260 (A1), US2014327013 (A1), JP2014527707 (A), KR20140096018 (A), TW201305397 (A), TWI468562 (B), US9093271 (B2), WO2013001014 (A1)

WO2013084020 (A1)
13/06/2013

⋄ Normally-off high electron mobility transistor and integrated circuit

C. Caramel, Y. Cordier, P. Renaud

FR 2963985 (A1)
24/02/2012

⋄ Gallium nitride vertical Schottky diode, has heavily doped p-type and n-type gallium nitride guard rings respectively provided at peripheries of electrode and lightly doped layer, where electrode is arranged on lightly doped layer

D. Alquier, Y. Arnaud, Y. Cordier, E. Frayssinet, M. Kennard

FR2926675 (B1)
29/07/2011

⋄ Method for obtaining a structured material with through openings, in particular nitries of type III semiconductors structured according to photonic crystal patterns

S. David, P. Boucaud, F. Semond
EP2232314 (A1), FR2926675 (A1), EP2232314 (B, US2011084310 (A1), WO2009092981 (A1)

US7560296 (B2)
14/07/2009

⋄ Process for producing an epitaxial layer of gallium nitride

E. Frayssinet, B. Beaumont, J.P. Faurie, P. Gibart
US2007072320 (A1), US2010001289 (A1), US8030101 (B2)

FR2908925 (B1)
20/02/2009

⋄ Process for integrating a III-N type component on a A(001) nominal silicium substrate

S. Joblot, F. Semond, J. Massies, Y. Cordier, J-Y. Duboz
FR2908925 (A1), US2008149936 (A1), US7785991 (B2)

FR2898434 (B1)
23/05/2008

⋄ Method of manufacturing a light-emitting diode

J. Massies, B. Damilano
EP1994571 (A1), FR2898434 (A1), US2011045623 (A1), JP2009530803 (A), KR20080104368 (A), US2009101934 (A1), US8470618 (B2), WO2007104884 (A1)

FR2888398 (B1)
21/12/2007

⋄ Highly Oxygen-Sensitive Silicon Layer and Method for Obtaining Same

P. Soukiassian, F. Semond
EP1900012 (A1), FR2888398 (A1), US2009294776 (A1), JP2008544945 (A), WO2007003638 (A1)

US7118929 (B2)
10/10/2006

⋄ Process for producing an epitaxial layer of gallium nitride

E. Frayssinet, B. Beaumont, J.P. Faurie, P. Gibart
US2004137732 (A1)

FR2807909 (B1)
28/07/2006

⋄ Thin semiconductor GaInN layer method for preparing same, light-emitting diode comprising said layer illumination device

J. Massies, N. Grandjean, B. Damilano
AU5048601 (A), CA2405517 (A1), CA2405517 (C), CN1422444 (A), EP1273049 (A1), EP1273049 (B1), FR2807909 (A1), FR2807909 (B1), JP2003530703 (A), JP5296280 (B2), KR100900933 (B1), KR20030001405 (A), US2003092209 (A1), US6730943 (B2), WO0178157 (A1), AT524836 (T)

FR2860248 (B1)
17/02/2006

⋄ Method of producing self-supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer

E. Feltin, Z. Bougrioua, G. Nataf
WO2005031045 (A3), AT414189 (T), AU2004276541 (A1), AU2004276541 (B2), CA2540245 (A1), CA2540245 (C), CN100387760 (C), CN1882720 (A), EP1699951 (A2), EP1699951 (B1), FR2860248 (A1), WO2005031045 (A2), JP2007506635 (A), JP4783288 (B2), KR20060079249 (A), US2007072396 (A1), US7282381 (B2)

FR2842832 (B1)
20/01/2006

⋄ Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density

B. Beaumont, P. Gibart, J.P. Faurie
AU2003269052 (A1), AU2003269052 (A8), CN1329560 (C), CN1678771 (A), EP1525340 (A2), EP1525340 (B1), FR2842832 (A1), AT525499 (T), HK1097886 (A1), JP2005534182 (A), JP4444104 (B2), KR100950903 (B1), KR20050026962 (A), US2006099781 (A1), US7455729 (B2), WO2004012227 (A2), WO2004012227 (A3)

FR2860101 (B1)
21/10/2005

⋄ Protection od SiC surface by GaN layer

B. Daudin, J. Brault
AT532213 (T) EP1517368 (A2) EP1517368 (A3) EP1517368 (B1) FR2860101 (A1), JP2005097104 (A), JP4745635 (B2), US2005202284 (A1), US7354619 (B2)

FR2840452 (B1)
14/10/2005

⋄ Method for manufacturing gallium nitride film separated from substrate by epitaxy

H. Lahreche, G. Nataf, B. Beaumont
AU2003255613 (A1), AU2003255613 (A8), EP1514297 (A2), FR2840452 (A1), JP2010251776 (A), JP2005527978 (A), US2005217565 (A1), US7488385 (B2), WO03100839 (A2), WO03100839 (A3)

FR2810159 (B1)
08/04/2005

⋄ Preparation method of a coating of gallium nitride

F. Semond, N. Grandjean, J. Massies
CN101241883 (B), AU6613101 (A), CA2411606 (A1), CA2411606 (C), CN100380588 (C), CN1436365 (A), EP1290721 (A1), EP1290721 (B1), FR2810159 (A1), CN101241883 (A), JP2003536257 (A), JP5378634 (B2), KR100897589 (B1), KR20030007896 (A), US2003136333 (A1), US2008048207 (A1), US2008050894 (A1), US2008185611 (A2), US2008188065 (A2), US7273664 (B2), US7767307 (B2), US7776154 (B2), WO0195380 (A1)

FR2803433 (B1)
14/02/2003

⋄ High power optoelectronic device made by forming metal grid on semiconductor substrate, applying non nucleating, non spread layer to grid and then growing semiconductor layer

J. Guyaux, J.C. Garcia, J. Massies
FR2803433 (A1)

US6445009 (B1)
03/09/2002

⋄ Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings

N. Grandjean, J. Massies, B. Damilano, F. Semond, M. Leroux

FR2769924 (B1)
10/03/2000

⋄ Epitaxial gallium nitride layer, especially for an optoelectronic component, is formed using a dielectric mask

S. Haffouz,P. Gibart, B. Guillaume, G. Nataf, M. Vaille, B. Beaumont
AT303462 (T) AT500358 (T) AU9632498 (A) CN1267587 (C) CN1279733 (A), CN1329954 (C), CN1607641 (A), DE69831419 (T2), EP1034325 (A1), EP1034325 (B1), EP1034325 (B9), EP1338683 (A2), EP1338683 (A3), EP1338683 (B1), FR2769924 (A1), ES2369467 (T3), HK1075131 (A1), JP2001520169 (A), JP4282896 (B2), KR100626625 (B1), KR20010031225 (A), PT1338683 (E), SG103342 (A1), US2002152952 (A1), US6325850 (B1), US6802902 (B2), WO9920816 (A1)

FR2769924 (B1)
10/03/2000

⋄ Method for producing a gallium nitride epitaxial layer

B. Beaumont, P. Gibart, J.C. Guillaume, G. Nataf, M. Vaille, S. Haffouz
US6325850 (X6) AT303462 (T) AT500358 (T) AU9632498 (A) CN1267587 (C), CN1279733 (A), CN1329954 (C), CN1607641 (A), DE69831419 (T2), EP1034325 (A1), EP1034325 (B1), EP1034325 (B9), EP1338683 (A2), EP1338683 (A3), EP1338683 (B1), ES2369467 (T3), FR2769924 (A1), US6325850 (B1), HK1075131 (A1), JP2001520169 (A), JP4282896 (B2), KR100626625 (B1), KR20010031225 (A), PT1338683 (E), SG103342 (A1), US2002152952 (A1), US6802902 (B2), WO9920816 (A1)

FR2757183 (B1)
05/02/1999

⋄ Very long and highly stable atomic wires, method for making these wires, application in nano-electronics

G. Dujardin, A. Mayne, F. Semond, P. Soukiassian
AT235743 (T), DE69720249 (T2), DK0944916 (T3), EP0944916 (A1), EP0944916 (B1), FR2757183 (A1), US6274234 (B), JP2001506806 (A), JP4327254 (B2), WO9827578 (A1)

FR2693594 (B1)
26/08/1994

⋄ Electromagnetic wave detector with quantum well structure

P. Bois, E. Rosencher, B. Vinter, J. Massies, G. Neu, N. Grandjean
EP0578557 (A1), FR2693594 (A1), US5506418 (A)

FR3048002 (A1)

⋄ A method for obtaining a low defect semipolar nitride layer on a crystalline substrate

G. Feuillet, M. Khoury, P. Vennéguès, J. Zúñiga-Pérez
WO2017144429 (A1)