The Advanced Electronics Group (formerly ELECTRO) brings together research activities focused on materials that may be of interest for electronic applications. The group consists of two teams.

• The research activities of the SEMI team focus on both Group III nitrides (GaN, AlN, …) and transition metal nitrides (ScAlN, NbN, …), silicon carbide (SiC), and ZnO-based oxide alloys such as ZnMgO, with a view to applications in high-frequency electronics, power electronics, MEMS, or for integration with other materials. These activities involve the fabrication of materials via epitaxy, their characterization, and, in some cases, the fabrication of test devices and demonstration components—efforts that also rely in part on the numerous academic and industrial partnerships developed over the years.
• The 2D+ team develops epitaxial growth of materials such as graphene and transition metal dichalcogenides (MoS₂, etc.). Layered 2D materials are also fabricated using layer transfer, and their properties are studied.