Photo de Pierre-Marie Coulon
Name : Pierre-Marie Coulon
Status : Engineer
Grade : IR2
Team(s) : Nano   
: +33 4 93 95 4216



Publications (11)

⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Giuseppe Greco, Patrick Fiorenza, Emanuela Schiliro, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte
Microelectron Eng, 276,  112009, (2023) - Article de conférence

⋄ Metasurface-enhanced light detection and ranging technology

Renato Juliano Martins, Emil Marinov, M. Aziz Ben Youssef, Christina Kyrou, Mathilde Joubert, Constance Colmagro, Valentin Gâté, Colette Turbil, Pierre-Marie Coulon, Daniel Turover, Samira Khadir, Massimo Giudici, Charalambos Klitis, Marc Sorel & Patrice Genevet
Nat. Commun, 13,  5724 , (2022) - Papier régulier

⋄ Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE

Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing
Cryst. Growth Des., 22,  5206, (2022) - Papier régulier

⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires

K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0,  0, (2021) - Papier régulier

⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields
Sci Rep., 10,  5642, (2020) - Papier régulier

⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials

P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5,  52, (2019) - Papier régulier

⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12,  045007, (2019) - Papier régulier

⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy

P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express., 9,  015502, (2016) - Papier régulier

⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties

P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 252,  1096, (2015) - Papier régulier

⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
J. Appl. Phys., 115,  153504, (2014) - Papier régulier

⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes

P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez
Optics Express, 20,  18707, (2012) - Papier régulier


Phd defended in CRHEA on 20/05/2014. subject : Growth and characterization of GaN nanowires