Name : Pierre-Marie Coulon
Status : Engineer
Grade : IR2
Team(s) : Nano
☎ : +33 4 93 95 4216
Functions
Activities
Publications (14)
⋄ Time-Periodic Markers Revealing the Growth Mechanism of GaN Nanowires by Si-Assisted MOVPE Julien Bosch, Philippe Vennéguès, Pierre-Marie Coulon, Philip A. Shields, Jesus Zúñiga-Pérez,
Maria Tchernycheva, Christophe Durand, and Blandine Alloing |
⋄ Growth of (10-11) Semipolar GaN-Based Light-Emitting Diode Structures on Silicon-on-Insulator Beatrice Wannous, Pierre-Marie Coulon, Ludovic Dupré, Fabian Rol, Névine Rochat, Jesus Zuniga-Perez, Philippe Vennéguès, Guy Feuillet, François Templier |
⋄ High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes Kilian Baril; Pierre-Marie Coulon; Mrad Mrad; Nabil Labchir; Guy Feuillet; Matthew Charles;
Cécile Gourgon; Philippe Vennéguès; Jesus Zuniga-Perez; Blandine Alloing |
⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates Giuseppe Greco, Patrick Fiorenza, Emanuela Schiliro, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte |
⋄ Metasurface-enhanced light detection and ranging technology Renato Juliano Martins, Emil Marinov, M. Aziz Ben Youssef, Christina Kyrou, Mathilde Joubert, Constance Colmagro, Valentin Gâté, Colette Turbil, Pierre-Marie Coulon, Daniel Turover, Samira Khadir, Massimo Giudici, Charalambos Klitis, Marc Sorel & Patrice Genevet |
⋄ Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing |
⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
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⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields |
⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields |
⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields |
⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez |
⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez |
⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez |
⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez |
Curriculum
Phd defended in CRHEA on 20/05/2014. subject : Growth and characterization of GaN nanowires
