Name : Mathieu Leroux
Status : Visitor
Grade : CRCE
Team(s) : SCR Optical analysis
☎ : +33 4 93 95 7826
Functions
Activities
Publications (143)
⋄ DUV LEDs based on AlGaN Quantum Dots Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter,
Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil |
⋄ Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy M. Nemoz, F. Semond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche,J. Zúñiga-Pérez |
⋄ UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots J. Brault, M. Al Khalfioui, S. Matta, T.H. Ngo, S. Chenot, M. Leroux, P. Valvin and B. Gil |
⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras |
⋄ Photoassisted chemical smoothing of AlGaN surface after laser lift-off Zhongming Zheng, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, and Baoping Zhang |
⋄ Two-Gap Superconductivity in 2H-NbS(2) Z. Pribulova, M. Leroux, J. Kacmarcik, C. Marcenat, T. Klein, P. Rodiere, L. Cario, P. Samuely |
⋄ Crystalline magnesium nitride (Mg3N2): From epitaxial growth to fundamental physical properties P. John, H. Rotella, C. Deparis, G. Monge, F. Georgi, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez |
⋄ A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Blandine Alloing, Mathieu Leroux, Seoung-Hwan Park, Julien Brault and Yong-Hoon Cho |
⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil |
⋄ Role of In in hydrogenation of N-related complexes in GaInNAs T.Mou, S.Li, C.R.Brown, V.R.Whiteside, K.Hossain, M.Al Khalfioui, M.Leroux, I.R.Sellers, B.Wang |
⋄ Competition between horizontal and vertical polariton lasing in planar microcavities O. Jamadi, F. Réveret, D. Solnyshkov, P. Disseix, J. Leymarie, L. Mallet-Dida, C. Brimont, T. Guillet, X. Lafosse, S. Bouchoule, F. Semond, M. Leroux, J. Zúñiga-Pérez, and G. Malpuech |
⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression R. Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet |
⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond |
⋄ Edge-emitting polariton laser and amplifier based on a ZnO waveguide O. Jamadi, F. reveret, P. Disseix, F. Medard, J. Leymarie, A. Moreau, D. Solnyshkov, C. Deparis, M. Leroux, E. Cambril, S. Bouchoule, J. Zúñiga-Pérez, and G. Malpuech |
⋄ Loss analysis in nitride deep ultraviolet planar cavity Z. Zheng, Y. Li, O. Paul, H. Long, S. Matta, M. Leroux, J. Brault, L. Ying, Z. Zheng, and B. Zhang |
⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil |
⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001) S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil |
⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies |
⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil |
⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers |
⋄ Excitonic complexes in GaN/(Al,Ga)N quantum dots D. Elmaghraoui, M. Triki, S. Jaziri, G. Muñoz-Matutano, M. Leroux, J. Martinez-Pastor |
⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis,
M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont,
and T. Guillet |
⋄ Ultraviolet light emitting diodes using III-N quantum dots J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil |
⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates M. Khoury, P. Vennéguès, M. Leroux,V. Delaye, G. Feuillet and J. Zúñiga-Pérez |
⋄ High temperature electrical transport study of Si-doped AlN S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux,
B. Damilano, J. Brault |
⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont |
⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil |
⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho |
⋄ Improved performance of GaInNAs solar cell after UV-activated hydrogenation M. Fukuda, V. R. Whiteside, J. C. Keay, M. Al Khalfioui, M. Leroux, K. Hossain, T. D. Golding, I. R. Sellers |
⋄ Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells M. Fukuda, V.R. Whiteside, J.C. Keay, Matthew B. Johnson, M. Al Khalfioui, M. Leroux, K. Hossain, T.D. Golding, I.R. Sellers |
⋄ Improved performance in GaInNAs solar cells by hydrogen passivation M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui |
⋄ Photoluminescence study of Be-acceptors in GaInNAs epilayers Y. Tsai, B. Barman, T. Scrace, M. Fukuda, V. R. Whiteside, I. R. Sellers, M. Leroux, M. Al Khalfioui, and A.
Petrou |
⋄ Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder J. Zúñiga-Pérez, L. Kappei, C. Deparis, F. Reveret, M. Grundmann, E. de Prado, O. Jamadi, J. Leymarie, S. Chenot, and M. Leroux |
⋄ Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zúñiga-Pérez |
⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil |
⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez |
⋄ Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity R. Hahe, C. Brimont, P. Valvin, T. Guillet, F. Li, M. Leroux, J. Zúñiga-Pérez, X. Lafosse, G. Patriarche, and S. Bouchoule |
⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez |
⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès |
⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil |
⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond |
⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez |
⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau |
⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier |
⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter |
⋄ Probing the nature of carrier localization in GaInNAs epilayers by optical methods Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou |
⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano. |
⋄ Fabrication and characterization of a room-temperature ZnO polariton laser F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, G. Malpuech, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, and J. Zúñiga-Pérez |
⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies |
⋄ From excitonic to photonic polariton condensate in a ZnO-based microcavity F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, J. Zúñiga-Pérez, and G. Malpuech |
⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau |
⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies |
⋄ Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux |
⋄ Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib |
⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez |
⋄ High quality factor photonicresonators for nitride quantum dots T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil,
D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud |
⋄ High quality factor of AlN microdisks embedding GaN quantum dot M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud |
⋄ LO-phonon-assisted polariton lasing in a ZnO-based microcavity L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zúñiga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont and T. Guillet |
⋄ Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau |
⋄ Polariton lasing in a hybrid bulk ZnO microcavity T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
|
⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry,
M. Leroux, A. Courville, O. Tottereau and J. Massies |
⋄ Polarized photoluminescence from nonpolar (11-20) (Ga,In)N multi-quantum-wells T. Gühne, Z. Bougrioua, M. Nemoz, R. Cmielowski, T. Bretagnon, B. Gil, M. Leroux |
⋄ Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, Y. André |
⋄ Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont and T. Guillet |
⋄ High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud |
⋄ Laser emission with excitonic gain in a ZnO planar microcavity T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule |
⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies |
⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry |
⋄ Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J.C. Moreno, F. Semond, M. Leroux, and S. Bouchoule |
⋄ Carrier transfer and recombination dynamics of a long-lived and visiblerange emission from multi-stacked GaN/AlGaN quantum dots J.H. Kim, B.J. Kwon, Y.H. Cho, T. Huault, M. Leroux, J. Brault |
⋄ Room temperature Strong coupling in low finesse GaN microcavities I.R. Sellers, F. Semond, M. Leroux, et al. |
⋄ Influence of the mirrors in the strong coupling regime in planar GaN microcavities F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies |
⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies |
⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111) N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies |
⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux |
⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies |
⋄ Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities K. Bejtka, F. Réveret, R.W. Martin, P.R. Edwards, A. Vasson, J. Leymarie, I. Sellers, J.Y. Duboz, M. Leroux, and F. Semond |
⋄ GaN quantum dots in (Al,Ga)N-based Microdisks S. Sergent, J.C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, B. Gayral, D. Néel, S. David, P. Boucaud, M. Leroux, F. Semond |
⋄ Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, J. Leymarie, M. Mihailovic, D.D. Solnyshkov, G. Malpuech, E. Frayssinet, S. Sergent, F. Semond, M. Leroux, S. Bouchoule |
⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli |
⋄ Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, and S. Bouchoule |
⋄ Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux |
⋄ GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures S. Sergent, J.C. Moreno, E. Frayssinet, S. Chenot, M. Leroux, and F. Semond |
⋄ Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet |
⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies |
⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies |
⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson |
⋄ Investigation of the optical properties of epitaxial-lateral-overgrown GaN on R- and M-sapphire T. Gühne, Z. Bougrioua, M. Albrecht, P. Vennéguès, M. Leroux, M. Laügt, S. Ndiaye,
M. Teisseire, L. Nguyen, and P. Gibart |
⋄ Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) andsemipolar (11-22) GaN in relation to microstructural characterization T. Gühne, M. Albrecht, Z. Bougrioua, P. Vennéguès, and M. Leroux |
⋄ Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22)GaN formed by Epitaxial Lateral Overgrowth on sapphire T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux |
⋄ Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer K. Bejtka, R.W. Martin, I.M. Watson, S. Ndiaye, M. Leroux |
⋄ Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities K. Bejtka, P.R. Edwards, R.W. Martin, F. Reveret, A. Vasson, J. Leymarie, I.R. Sellers, M. Leroux, and F. Semond |
⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies |
⋄ Polariton emission in GaN microcavities M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies |
⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli |
⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies |
⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa |
⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix |
⋄ Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux |
⋄ Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson |
⋄ Strong coupling of light with A and B excitons in GaN microcavities grown on silicon I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson |
⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix |
⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies |
⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson |
⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1) S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier |
⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies |
⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie |
⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies |
⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies |
⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies |
⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies |
⋄ Les nitrures d’éléments III M. Leroux |
⋄ Atomic structure of pyramidal defects in Mg-doped GaN P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart |
⋄ Engineering of an Insulating Buffer and Use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, E.T. Palacios, F. Calle, M. Leroux |
⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies |
⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111) F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie |
⋄ Vertical cavity InGaN LEDs grown by MOVPE P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart |
⋄ Photoluminescence of GaN microcrystallites prepared by a new solvothermal process C. Collado, G. Goglio, G. Demazeau, A.S. Barriere, L. Hirsch, M. Leroux |
⋄ Modelling and spectroscopy of GaN microcavities N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies |
⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart |
⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies |
⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart |
⋄ Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart |
⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart |
⋄ Potentialities of GaN-based microcanivities grown on silicon substrates N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson |
⋄ Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux |
⋄ Modeling of absorption and emission spectra of InGaN layers grown by MBE L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies |
⋄ Crack-free thick GaN layers on silicon(111) by MOVPE E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart |
⋄ Stress control in GaN grown on silicon(111) by MOPVE E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart |
⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
⋄ Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers H.P.D. Schenk, M. Leroux, P. De Mierry, M. Laügt, F. Omnès, and P. Gibart |
⋄ Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111) F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson |
⋄ Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies |
⋄ Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111) H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart |
⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies |
⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald |
⋄ Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies, |
⋄ From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies |
⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz |
⋄ Luminescence and absorption in InGaN epitaxial layers and the Van Roosbroeck-Shockley relation H.P.D. Schenk, M. Leroux, and P. De Mierry |
⋄ Green electroluminescent (Ga,InAl)N LEDs grown on Si(111) S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux |
⋄ Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart |
⋄ Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart |
Current contracts
Old contracts
Current supervisions
Old supervisions
Stéphane Dalmasso (PhD Student) (2001) Yang Chao (Stagiaire) (2015)
Post-doc
PhD
Curriculum
