Photo de Philippe Vennéguès
Name : Philippe Vennéguès
Status :
Grade : IRHC
Team(s) : SCR   
: +33 4 93 95 7826

Functions


Responsible for transmission microscopy (TEM) activity in the SCR team.

Activities


Bearer of the ACT-M platform project.

Publications (157)


⋄ Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, and M. Vladimirova
J. Appl. Phys., 135,  095702, (2024) - Papier régulier

⋄ High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes

Kilian Baril; Pierre-Marie Coulon; Mrad Mrad; Nabil Labchir; Guy Feuillet; Matthew Charles; Cécile Gourgon; Philippe Vennéguès; Jesus Zuniga-Perez; Blandine Alloing
J. Appl. Phys., 133,  245702, (2023) - Papier régulier

⋄ Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Materials, 15,  8602, (2022) - Papier régulier

⋄ Silicon diffusion in AlN

V. Bonito Oliva, D. Mangelinck,S. Hagedorn, H. Bracht, K. Irmscher, C. Hartmann, P. Vennéguès, and M. Albrecht
J. Appl. Phys., 134,  095103, (2023) - Papier régulier

⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès
Crystals, 12,  1605, (2022) - Papier régulier

⋄ On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson, F. Semond, G. Feuillet, and C. Cornet
J. Appl. Phys., 132,  165102, (2022) - Papier régulier

⋄ Coulomb blockade: Towards charge control of self-assembled GaN quantum dots at room temperature

C. A. Sgroi, J. Brault, J-Y Duboz, S. Chenot, P. Vennéguès, A. Ludwig, and A. D. Wieck
Appl. Phys. Lett., 120,  012105, (2022) - Papier régulier

⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
J. Cryst. Growth, 593,  126779, (2022) - Papier régulier

⋄ Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics

Morteza Monavaria, Jiaming Xu, Michel Khoury, Feng Wu,Philippe De Mierry,Philippe Vennéguès , Mikhail A. Belkin, and James S. Speck
Phys. Rev. Applied, 16,  054040, (2021) - Papier régulier

⋄ Microstructure of epitaxial Mg3N2 thin films grown by MBE

P. John, P. Vennéguès, H. Rotella, C. Deparis, C. Lichtensteiger, and J. Zúñiga-Pérez
J. Appl. Phys., 129,  095303, (2021) - Papier régulier

⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping

Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet
Appl. Phys. Express., 13,  115504, (2020) - Papier régulier

⋄ Use of thulium-doped LaF3 nanoparticles to lower the phonon energy of the thulium's environment in silica-based optical fibres

M. Vermillac, H. Fneich, J.-F. Lupi, J.-B. Tissot, C. Kucera, P. Vennéguès, A. Mehdi, D. R. Neuville, J. Ballato, W. Blanc
Opt. Mater., 68,  24 - 28, (2017) - Papier régulier

⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua
ACS Appl. Nano Mater., 3,  4054, (2020) - Papier régulier

⋄ Crystalline magnesium nitride (Mg3N2): From epitaxial growth to fundamental physical properties

P. John, H. Rotella, C. Deparis, G. Monge, F. Georgi, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Phys. Rev. Materials, 4,  054601, (2020) - Papier régulier

⋄ Luminescence behavior of semipolar (10-11) InGaN/GaN “bow-tie” structures on patterned Si substrates

J. Bruckbauer, C. Trager-Cowan, B. Hourahine, A. Winkelmann, P. Vennéguès, A. Ipsen, X. Yu, X. Zhao, M.J. Wallace, P.R. Edwards, G. Naresh-Kumar, M. Hocker, S. Bauer, R. Müller, J. Bai , K. Thonke, T. Wang, R.W. Martin
J. Appl. Phys., 127,  035705, (2020) - Papier régulier

⋄ Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates

M. Khoury, H. Li, H. Zhang, B. Bonef, M. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J.S. Speck, S. Nakamura, S.P. DenBaars
ACS Appl. Mater. Interfaces, 11, 50,  47106-47111, (2019) - Papier régulier

⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126,  205701, (2019) - Papier régulier

⋄ Al5+αSi5+δN12, a new Nitride compound

R. Dagher, L. Lymperakis, V. Delaye, L. Largeau, A. Michon, J. Brault & P. Vennéguès
Sci Rep., 9,  15907, (2019) - Papier régulier

⋄ Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography

L. Amichi, I. Mouton, V. Boureau , E. Di Russo, P. Vennéguès, P. De Mierry, A. Grenier, P.H. Jouneau, C. Bougerol and D. Cooper
Nanotechnology, 31,  045702, (2020) - Papier régulier

⋄ On the morphologies of oxides particles in optical fibers: Effect of the drawing tension and composition

M. Vermillac, H. Fneich, J. Turlier, M. Cabie, C. Kucera, D. Borschneck, F. Peters, P. Vennéguès, T. Neisius, S. Chaussedent, D. R Neuville, A. Mehdi, J. Ballato, and W. Blanc
Opt. Mater., 87,  74-79, (2019) - Papier régulier

⋄ Breaking the Intersubband Selection Rules for Absorption with Quantum Wells: Light Polarization Sensitivity under Normal Incidence

M. Montes Bajo, J. Tamayo-Arriola, N. Le Biavan, J.M. Ulloa, P. Vennéguès, D. Lefebvre, M. Hugues, J.-M. Chauveau, A. Hierro
Phys. Rev. Applied, 10,  034022, (2018) - Papier régulier

⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression

R. Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet
J. Appl. Phys., 125,  035703, (2019) - Papier régulier

⋄ Intentional polarity conversion of AlN epitaxial layers by oxygen

N. Stolyarchuk, T. Markurt, A. Courville, K. March, J. Zúñiga-Pérez, P. Vennéguès & M. Albrecht
Sci Rep., 8,  14111, (2018) - Papier régulier

⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil
J. Cryst. Growth, 499,  40, (2018) - Papier régulier

⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range

J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33,  075007, (2018) - Papier régulier

⋄ Proposition of a model elucidating the AlN-on-Si (111) microstructure

N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouvière, G. Feuillet, and P. Vennéguès
J. Appl. Phys., 123,  215701, (2018) - Papier régulier

⋄ γ′ precipitates with a twin orientation relationship to their hosting grainin a γ-γ′ nickel-based superalloy

S. Vernier, J.-M. Franchet, C. Dumont, P. Vennéguès, N. Bozzolo
Scr. Mater., 153,  10, (2018) - Papier régulier

⋄ Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polarAlN epitaxial layers

N. Stolyarchuk, T. Markurt, A. Courville, K. March, O. Tottereau, P. Vennéguès, and M. Albrecht
J. Appl. Phys., 122,  155303, (2017) - Papier régulier

⋄ Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

M. Khoury, O. Tottereau, G. Feuillet, P. Vennéguès, and J. Zúñiga-Pérez
J. Appl. Phys., 122,  105108, (2017) - Papier régulier

⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission

S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys., 122,  085706, (2017) - Papier régulier

⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing3C-SiC membranes

R. Khazaka, J.-F. Michaud, P. Vennéguès, D. Alquier, and M. Portail
Appl. Phys. Lett., 110,  081602, (2017) - Papier régulier

⋄ Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber

M. Vermillac, J.-F. Lupi,F. Peters,M. Cabié, P. Vennéguès,C. Kucera, T. Neisius, J. Ballato, W. Blanc
J. Am. Ceram. Soc., 100(5),  1814-1819, (2017) - Papier régulier

⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault.
J. Cryst. Growth, 461,  10-15, (2017) - Papier régulier

⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiCgrowth direction

R. Khazaka, J.-F. Michaud, P. Vennéguès, L. Nguyen, D. Alquier, and M. Portail
J. Appl. Phys., 120,  185306, (2016) - Papier régulier

⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates

M. Khoury, P. Vennéguès, M. Leroux,V. Delaye, G. Feuillet and J. Zúñiga-Pérez
J. Phys. D: Appl. Phys., 49,  475104, (2016) - Papier régulier

⋄ Evidence of multimicrometric coherent γ' precipitates in a hot-forged γ –γ' nickel-based superalloy

M.-A. Charpagne, P. Vennéguès, T. Billot, J.-M. Franchet and N. Bozzolo
J. Microsc., 263,  106, (2016) - Papier régulier

⋄ Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

X. S. Nguyen, H. W. Hou, P. De Mierry, P. Vennéguès, F. Tendille, A. R. Arehart, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua
Phys. Stat. Sol. B, 253(11),  2225-2229, (2016) - Papier régulier

⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality

F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry
Appl. Phys. Lett., 109,  082101, (2016) - Papier régulier

⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots

J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont
AIP. Proceedings, 1566,  73, (2012) - Article de conférence

⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986,  89860Z, (2014) - Article de conférence

⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates

J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE, 9363,  93630Z, (2015) - Article de conférence

⋄ Polarity Control in Group-III Nitrides beyond Pragmatism

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht
Phys. Rev. Applied, 5,  054004, (2016) - Papier régulier

⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55,  05FG06, (2016) - Papier régulier

⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 253,  105-111, (2016) - Papier régulier

⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud
Appl. Phys. Lett., 108,  011608, (2016) - Papier régulier

⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy

P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express., 9,  015502, (2016) - Papier régulier

⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth, 433,  165-171, (2016) - Papier régulier

⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
J. Cryst. Growth, 434,  25, (2016) - Papier régulier

⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald
J. Appl. Phys., 118,  024303, (2015) - Papier régulier

⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud
Acta Mater., 98,  336, (2015) - Papier régulier

⋄ Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

P. Vennéguès, F. Tendille and P. De Mierry
J. Phys. D: Appl. Phys., 48,  325103, (2015) - Papier régulier

⋄ Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

F. Tendille, M. Hugues, P. Vennéguès, M. Teisseire and P. De Mierry
Semicond. Sci. Tech., 30,  065001, (2015) - Papier régulier

⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect

R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud
Mat. Sci. For., 821-823,  978, (2015) - Article de conférence

⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil
Appl. Phys. Lett., 106,  142101, (2015) - Papier régulier

⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy

M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès
J. Cryst. Growth, 419,  88-93, (2015) - Papier régulier

⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers

Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Phys. Stat. Sol. C, 3-4,  498-501, (2014) - Article de conférence

⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire
J. Cryst. Growth, 404,  177-183, (2014) - Papier régulier

⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter

B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE, 1G,  8986, (2014) - Article de conférence - invité

⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29,  084001, (2014) - Papier invité

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films

Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398,  23, (2014) - Papier régulier

⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
J. Appl. Phys., 115,  153504, (2014) - Papier régulier

⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau
J. Cryst. Growth, 388,  35, (2014) - Papier régulier

⋄ Quantitative determination of compositional profiles using HAADF image simulations

R. El Bouayadi, M. Korytov, P.A. van Aken, P. Vennéguès, and M. Benaissa
Phys. Stat. Sol. C, 11,  284, (2014) - Papier régulier

⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties

S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano
Semicond. Sci. Tech., 29,  035016, (2014) - Papier régulier

⋄ On the growth of Zn1–xMnxO thin films by plasma-assisted MBE

C. Deparis, C. Morhain, J. Zúñiga-Pérez, J.M. Chauveau, H. Kim-Chauveau, P. Vennéguès, M. Teisseire, B. Vinter
Phys. Stat. Sol. C, 10,  1322, (2013) - Article de conférence

⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier
Phys. Stat. Sol. A, 210,  480-483, (2013) - Papier régulier

⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies
Appl. Phys. Express., 6,  092105, (2013) - Papier régulier

⋄ Plasmon energy from strained GaN quantum wells

M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken
Appl. Phys. Lett., 103,  021901, (2013) - Papier régulier

⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies
Jpn. J. Appl. Phys., 52,  08JG01, (2013) - Papier régulier

⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates

Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau
Appl. Phys. Express, 6,  042101, (2013) - Papier régulier

⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers

M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès
Semicond. Sci. Tech., 28,  035006, (2013) - Papier régulier

⋄ On the origin of basal stacking faults in nonpolar wurtzite films epitaxiallygrown on sapphire substrates

P. Vennéguès, J.M. Chauveau, Z. Bougrioua, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys., 112,  113518, (2012) - Papier régulier

⋄ Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson
J. Cryst. Growth, 353,  108, (2012) - Papier régulier

⋄ Fabrication and growth of GaN-based micro and nanostructures

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9,  412-427, (2012) - Papier invité

⋄ Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar andsemipolar orientations

P. Vennéguès
Semicond. Sci. Tech., 27,  024004, (2012) - Papier régulier

⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck
J. Cryst. Growth, 338,  20, (2012) - Papier régulier

⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range

A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110,  084318, (2011) - Papier régulier

⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties

S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109,  053514, (2011) - Papier régulier

⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez
Appl. Phys. Lett., 98,  011914, (2011) - Papier régulier

⋄ Study of the epitaxial relationships between III-nitrides and M-planesapphire

P. Vennéguès, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys., 108,  113521, (2010) - Papier régulier

⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth

N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry
Nanoscale Res. Lett., 5,  1878, (2010) - Article de conférence

⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry
J. Cryst. Growth, 312,  2625, (2010) - Papier régulier

⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105,  033701, (2009) - Papier régulier

⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311,  2002-2005, (2009) - Article de conférence

⋄ Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructureof Nonpolar AlN Films Grown on (1120) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy

P. Vennéguès, S. Founta, H. Mariette, and B. Daudin
Jpn. J. Appl. Phys., 49,  040201, (2010) - Papier régulier

⋄ Catalytic unzipping of carbon nanotubes to few-layer graphene sheets undermicrowaves irradiation

I. Janowska , O. Ersen , T. Jacob, P. Vennéguès, D. Bégin, M.J. Ledoux, C. Pham-Huu
Applied Catalysis A:General, 371,  22-30, (2009) - Papier régulier

⋄ Phase separation in GaN/AlGaN quantum dots

M. Benaissa, L. Gu, M. Korytov, T. Huault, P.A. van Aken, J. Brault, and P. Vennéguès
Appl. Phys. Lett., 95,  141901, (2009) - Papier régulier

⋄ In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

P. Vennéguès, T. Zhu, Z. Bougrioua, D. Martin, J. Zúñiga-Pérez, and N. Grandjean
Jpn. J. Appl. Phys., 48,  090211, (2009) - Papier régulier

⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski
Appl. Phys. Lett., 95,  081903, (2009) - Papier régulier

⋄ Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault, P. Vennéguès
Appl. Phys. Lett., 94,  143105, (2009) - Papier régulier

⋄ Anisotropic chemical etching of semipolar {10-1-1}/{10-1+1} ZnO crystallographic planes: polarity versus dangling bonds

E. Palacios-Lidon, B. Pérez-Garcia, P. Vennéguès, J. Colchero, V. Muñoz-Sanjosé, and J. Zúñiga-Pérez
Nanotechnology, 20,  065701, (2009) - Papier régulier

⋄ Gallium Nitride: A Nanoscale Study Using Electron Microscopy and Associated techniques

M. Benaissa and P. Vennéguès
Sains Malaysiana, 37(3),  255-259, (2008) - Article de conférence - invité

⋄ Growth and Characterization of Non-Polar (Zn,Mg)O/ZnO Quantum Wells and Multiple Quantum Wells

J.M. Chauveau, B. Vinter, M. Laugt, M. Teisseire, P. Vennéguès, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Kor. Phys. Soc., 53(5),  2934, (2008) - Article de conférence

⋄ Interface structure and anisotropic strain relaxation of non polar wurtzite (11-20) and (10-10) orientations: ZnO epilayers grown on sapphire

J.M. Chauveau, P. Vennéguès, M. Laügt, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Appl. Phys., 104,  073535, (2008) - Papier régulier

⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz
Phys. Stat. Sol. (c), S2,  897, (2009) - Article de conférence

⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors

R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson
International Workshop on Nitride Semiconductors, ,  , (2008) - Article de conférence

⋄ Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

P. Vennéguès, J.M. Chauveau, M. Korytov, C. deparis, J. Zúñiga-Pérez, and C. Morhain
J. Appl. Phys., 103,  083525, (2008) - Papier régulier

⋄ Investigation of the optical properties of epitaxial-lateral-overgrown GaN on R- and M-sapphire

T. Gühne, Z. Bougrioua, M. Albrecht, P. Vennéguès, M. Leroux, M. Laügt, S. Ndiaye, M. Teisseire, L. Nguyen, and P. Gibart
Mater. Res. Soc. Symp. Proc., 955,  0955-I12-04, (2006) - Article de conférence

⋄ Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) andsemipolar (11-22) GaN in relation to microstructural characterization

T. Gühne, M. Albrecht, Z. Bougrioua, P. Vennéguès, and M. Leroux
J. Appl. Phys., 101,  113101, (2007) - Papier régulier

⋄ Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22)GaN formed by Epitaxial Lateral Overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux
Phys. Rev. B, 77,  075308, (2008) - Papier régulier

⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter
Appl. Phys. Lett., 93,  081116, (2008) - Papier régulier

⋄ Symmetry of wurtzite nanostructures with the c-axis in the layer plane

P. Tronc and P. Vennéguès
Phys. Rev. B, 77,  075336, (2008) - Papier régulier

⋄ Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy

J.M. Chauveau, M. Laügt, P. Vennéguès, M. Teisseire, B. Lo, C. Deparis, C. Morhain, and B. Vinter
Semicond. Sci. Tech., 23 (3),  035005, (2008) - Papier régulier

⋄ Anisotropic morphology of nonpolar a-plane quantum dots and quantum wells

S. Founta, C. Bougerol, H. Mariette, B. Daudin and P. Vennéguès
J. Appl. Phys., 102,  074304, (2007) - Papier régulier

⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties

M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch
Phys. Stat. Sol. (c), 4, No. 1,  137-140, (2007) - Article de conférence

⋄ Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on M-plane sapphire by metalorganic-vapor-phase-epitaxy

P. Vennéguès, Z. Bougrioua and T. Guehne
Jpn. J. Appl. Phys, 46, n° 7A,  4089, (2007) - Papier régulier

⋄ Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy

J.M. Chauveau, D.A. Buell, M. Laugt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, and C. Morhain
J. Cryst. Growth, 301-302,  366-9, (2007) - Article de conférence

⋄ Growth and characterization of A-plane ZnO and ZnCoO based heterostructures

J.M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, M. Tesseire-Doninelli, and G. Neu
Applied Physics A: Materials Science and Processing, 88 (1),  65-9, (2007) - Article de conférence

⋄ X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau and V. Muñoz -Sanjosé
Appl. Phys. A, 88,  61, (2007) - Article de conférence

⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies
Superlattice Microst, 40,  295-299, (2006) - Article de conférence

⋄ Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux
Phys. Stat. Sol. (a), 204, n°1,  282-289, (2007) - Article de conférence

⋄ investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

M. Benaissa, P. Vennéguès, O. Tottereau, L. Nguyen and F. Semond
Appl. Phys. Lett., 89,  231903, (2006) - Papier régulier

⋄ Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFTES Measured in Strong Inversion

A. Pérez-Tomas, M. Vellvehi, N. Mestres, J. Millan, P. Vennéguès and J. Stoemenos
Mat. Sci. For., 527-529,  1059, (2006) - Article de conférence

⋄ Characterization of high-k Ta/sub 2/Si oxidized films on 4H-SiC and Si substrates as gate insulator

A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millan, N. Mestres, P. Vennéguès and J. Stoemenos
J. Electrochem. Soc., 152(4),  G259-65, (2005) - Papier régulier

⋄ Characterization of structural defects in GaN films grown on sapphire substrates

P. Vennéguès, F. Mathal, and Z. Bougrioua
Phys. Stat. Sol. (c), 3/6,  1658-1661, (2006) - Article de conférence

⋄ Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE

V.G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K.S. Zhuralev, P. Vennéguès
Phys. Stat. Sol. (c), 3, No.6,  1548, (2006) - Article de conférence

⋄ Epitaxial orientation of III-Nitrides grown on R-plane sapphire by metalorganic-vapor-phase-epitaxy

P. Vennéguès and Z. Bougrioua
Appl. Phys. Lett., 89,  111915, (2006) - Papier régulier

⋄ Growth of GaN/AlxGa1-xN-based Bragg reflectors on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition: Towards group III-nitride microcavities

H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, P. Wisniewski, S. Grzanka, M. Krysko, O. Tottereau, P. Vennéguès, P. Perlin, M. Leszczynski, and T. Suski
Proc. 9th Ann. Nanophys. Nanoel. Symp., ,  338-339, (2005) - Article de conférence

⋄ Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennéguès, A. Leycuras
Mat. Sci. For., 483-485,  213-216, (2005) - Article de conférence

⋄ Structural and Electronic Properties of ZnMgO/ZnO Quantum Wells

C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, and G. Neu
Superlattice Microst, 38,  455-463, (2005) - Article de conférence - invité

⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c), 2, No. 7,  2187-2190, (2005) - Article de conférence

⋄ Submicron periodic poling and chemical patterning of GaN

S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies
Appl. Phys. Lett., 87,  062106, (2005) - Papier régulier

⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1)

S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier
J. Cryst. Growth, 280,  44-53, (2005) - Papier régulier

⋄ Ductile relaxation in cracked metal-organis chemical-vapor-deposition-grown AlGaN films on GaN

J.M. Bethoux and P. Vennéguès
J. Appl. Phys., 97,  123504, (2005) - Papier régulier

⋄ Relaxation Mechanisms in MOVPE grown Al rich (Al,Ga)N/GaN Hetero-Structures

P. Vennéguès, Z. Bougrioua, J.M. Bethoux, M. Azize, O. Tottereau
J. Appl. Phys., 97,  4912, (2005) - Papier régulier

⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth, 278/1-4,  393-396, (2005) - Article de conférence

⋄ Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC

A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millian, N. Mestres, P. Vennéguès and J. Stoemenos
Electrochem. Solid-State Lett., 7,  F93, (2004) - Papier régulier

⋄ Polarity inversion of GaN(0001) by a high Mg doping

S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies
J. Cryst. Growth, 269,  249, (2004) - Papier régulier

⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties

M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies
Eur. Phys. J. Appl. Phys., 257,  259-262, (2004) - Article de conférence

⋄ Plastic relaxation through buried cracks in AlGaN/GaN heterostructures

J.M. Bethoux, P. Vennéguès, M. Laügt and P. De Mierry
Eur. Phys. J. Appl. Phys., 257,  263-265, (2004) - Papier régulier

⋄ Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche
Appl. Phys. Lett., 83,  5139, (2003) - Papier régulier

⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont
Appl. Phys. Lett., 82(9),  1386, (2003) - Papier régulier

⋄ Atomic structure of pyramidal defects in Mg-doped GaN

P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart
Phys. Rev. B, 68,  235214, (2003) - Papier régulier

⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys., 94,  6499, (2003) - Papier régulier

⋄ Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, and J. Christen
J. Cryst. Growth, 258,  232, (2003) - Papier régulier

⋄ In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle
Appl. Phys. Lett., 80,  174, (2002) - Papier régulier

⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN

M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart
Phys. Stat. Sol. (a), 192,  394, (2002) - Article de conférence

⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN

P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart
Mat. Sci. Eng. B, 93,  224, (2002) - Article de conférence

⋄ On the effect of high Mg doping on the polarity of GaN

P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean
Institute of Physics Conferences Series, n°169,  307, (2002) - Article de conférence

⋄ 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire

F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie
Phys. Stat. Sol. (b), 229,  931, (2002) - Article de conférence

⋄ MBE-grown high-quality (Al,Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs

S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Semicond. Sci. Tech., 16,  913, (2001) - Papier régulier

⋄ High quality distributed Bragg refelctors based on AlxGa1-xN/GaN multilayers grown by MBE

S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Appl. Phys. Lett., 79,  2136, (2001) - Papier régulier

⋄ Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie
J. Appl. Phys., 90,  5115, (2001) - Papier régulier

⋄ Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE

H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle
Phys. Stat. Sol. (a), 188,  899, (2001) - Article de conférence

⋄ Epitaxial Lateral Overgrowth of GaN on Silicon (111)

E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart
Phys. Stat. Sol. (a), 188,  733, (2001) - Article de conférence

⋄ Crack-free thick GaN layers on silicon(111) by MOVPE

E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart
Phys. Stat. Sol. (a), 188,  531, (2001) - Article de conférence

⋄ Epitaxial Lateral overgrowth of GaN

B. Beaumont, P. Vennéguès, P. Gibart
Phys. Stat. Sol. (b), 227,  1-43, (2001) - Papier régulier

⋄ Stress control in GaN grown on silicon(111) by MOPVE

E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart
Appl. Phys. Lett., 79,  3220, (2001) - Papier régulier

⋄ Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates

F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie
Appl. Phys. Lett., 79,  194, (2001) - Papier régulier

⋄ Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart
J. Cryst. Growth, 217,  13, (2000) - Papier régulier

⋄ High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO

H. Lahrèche, V. Bousquet, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart
Diamond and Related Materials, 9,  452, (2000) - …

⋄ Phase separation in MOVPE AlxGa1-xN films deposited on 6H-SiC

P. Vennéguès, H. Lahrèche
Appl. Phys. Lett., 77,  4310, (2000) - Papier régulier

⋄ Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

M. Benaïssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai
Appl. Phys. Lett., 77,  2115, (2000) - Papier régulier

⋄ Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN

P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart
Appl. Phys. Lett., 77,  880, (2000) - Papier régulier

⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)

S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès
Phys. Rev. B, 61,  7618, (2000) - Papier régulier

⋄ Molecular beam epitaxy of ZnBeSe : influence of the substrate nature and epilayer properties

C. Chauvet, E. Tournié, P. Vennéguès, J.P. Faurie
Journal Electron. Mater., 29(6),  883, (2000) - …

⋄ Reduction mechanims for defect densities in GaN using one or two-step epitaxial lateral overgrowth methods

P. Vennéguès, V. Bousquet, B. Beaumont, M. Vaille, P. Gibart
J. Appl. Phys., 87(12),  4175, (2000) - Papier régulier

Current contracts


Old contracts


⋄ TEM

Acquisition d'un nouveau microscope électronique en transmission (FEDER-Région Sud)
Projet Européen  CRHEA, CEMEF, CCMA-UNS, Inphyni, Lagrange, OCA, CEPAM, IMRA (2020 - 2021)

⋄ TEM

Acquisition d'un nouveau microscope électronique en transmission (Région)
Projet Régional  CRHEA, CEMEF, CCMA-UNS, Inphyni, Lagrange, OCA, CEPAM, IMRA (2020 - 2020)

⋄ TEM

Fonctionnement pour microscope électronique en transmission (Fédération Doeblin)
Projet National  CRHEA, CEMEF, CCMA-UNS, Inphyni, Lagrange, OCA, CEPAM, IMRA (2021 - 2021)

Current supervisions


Ismail Madaci ()

Old supervisions


Rami Mantach (PhD Student) (2019)
Natalia Stolyarchuk (PhD Student) (2016)
Sakhawat Hussain (PhD Student) (2014)
Maxim Korytov (Comment PhD Student) (2010)
Valéria Bonito Oliva (PhD Student) ()
Romain Cohen (Stagiaire) (2018)

HDR


Structural properties of non and semipolar wurtzite semiconductors films
HDR defended in november 2009 at CRHEA

Post-doc


 

PhD


 

Curriculum