Name : Philippe Vennéguès
Status :
Grade : IRHC
Team(s) : SCR
☎ : +33 4 93 95 7826
Functions
Responsible for transmission microscopy (TEM) activity in the SCR team.
Activities
Bearer of the ACT-M platform project.
Publications (159)
⋄ High-temperature dust formation in carbon-rich astrophysical environments Guy Libourel, Marwane Mokhtari, Vandad-Julien Rohani, Bernard Bourdon, Clément Ganino, Eric Lagadec, Philippe Vennéguès, Vincent Guigoz, François Cauneau & Laurent Fulcheri |
⋄ Growth of (10-11) Semipolar GaN-Based Light-Emitting Diode Structures on Silicon-on-Insulator Beatrice Wannous, Pierre-Marie Coulon, Ludovic Dupré, Fabian Rol, Névine Rochat, Jesus Zuniga-Perez, Philippe Vennéguès, Guy Feuillet, François Templier |
⋄ Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, and M. Vladimirova
|
⋄ High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes Kilian Baril; Pierre-Marie Coulon; Mrad Mrad; Nabil Labchir; Guy Feuillet; Matthew Charles;
Cécile Gourgon; Philippe Vennéguès; Jesus Zuniga-Perez; Blandine Alloing |
⋄ Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault |
⋄ Silicon diffusion in AlN V. Bonito Oliva, D. Mangelinck,S. Hagedorn, H. Bracht, K. Irmscher, C. Hartmann,
P. Vennéguès, and M. Albrecht |
⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès |
⋄ On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson,
F. Semond, G. Feuillet, and C. Cornet |
⋄ Coulomb blockade: Towards charge control of self-assembled GaN quantum dots at room temperature C. A. Sgroi, J. Brault, J-Y Duboz, S. Chenot, P. Vennéguès, A. Ludwig, and A. D. Wieck |
⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier |
⋄ Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics Morteza Monavaria, Jiaming Xu, Michel Khoury, Feng Wu,Philippe De Mierry,Philippe Vennéguès , Mikhail A. Belkin, and James S. Speck |
⋄ Microstructure of epitaxial Mg3N2 thin films grown by MBE P. John, P. Vennéguès, H. Rotella, C. Deparis, C. Lichtensteiger, and J. Zúñiga-Pérez |
⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet |
⋄ Use of thulium-doped LaF3 nanoparticles to lower the phonon energy of the thulium's environment in silica-based optical fibres M. Vermillac, H. Fneich, J.-F. Lupi, J.-B. Tissot, C. Kucera, P. Vennéguès, A. Mehdi, D. R. Neuville, J. Ballato, W. Blanc |
⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua |
⋄ Crystalline magnesium nitride (Mg3N2): From epitaxial growth to fundamental physical properties P. John, H. Rotella, C. Deparis, G. Monge, F. Georgi, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez |
⋄ Luminescence behavior of semipolar (10-11) InGaN/GaN “bow-tie” structures on patterned Si substrates J. Bruckbauer, C. Trager-Cowan, B. Hourahine, A. Winkelmann, P. Vennéguès, A. Ipsen, X. Yu, X. Zhao, M.J. Wallace, P.R. Edwards, G. Naresh-Kumar, M. Hocker, S. Bauer, R. Müller, J. Bai , K. Thonke, T. Wang, R.W. Martin |
⋄ Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates M. Khoury, H. Li, H. Zhang, B. Bonef, M. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J.S. Speck, S. Nakamura, S.P. DenBaars |
⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil |
⋄ Al5+αSi5+δN12, a new Nitride compound R. Dagher, L. Lymperakis, V. Delaye, L. Largeau, A. Michon, J. Brault & P. Vennéguès |
⋄ Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography L. Amichi, I. Mouton, V. Boureau , E. Di Russo, P. Vennéguès, P. De Mierry, A. Grenier, P.H. Jouneau, C. Bougerol and D. Cooper |
⋄ On the morphologies of oxides particles in optical fibers: Effect of the drawing tension and composition M. Vermillac, H. Fneich, J. Turlier, M. Cabie, C. Kucera, D. Borschneck, F. Peters, P. Vennéguès, T. Neisius, S. Chaussedent, D. R Neuville, A. Mehdi, J. Ballato, and W. Blanc |
⋄ Breaking the Intersubband Selection Rules for Absorption with Quantum Wells: Light Polarization Sensitivity under Normal Incidence M. Montes Bajo, J. Tamayo-Arriola, N. Le Biavan, J.M. Ulloa, P. Vennéguès, D. Lefebvre, M. Hugues, J.-M. Chauveau, A. Hierro |
⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression R. Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet |
⋄ Intentional polarity conversion of AlN epitaxial layers by oxygen N. Stolyarchuk, T. Markurt, A. Courville, K. March, J. Zúñiga-Pérez, P. Vennéguès & M. Albrecht |
⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil |
⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil |
⋄ Proposition of a model elucidating the AlN-on-Si (111) microstructure N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouvière, G. Feuillet, and P. Vennéguès |
⋄ γ′ precipitates with a twin orientation relationship to their hosting grainin a γ-γ′ nickel-based superalloy S. Vernier, J.-M. Franchet, C. Dumont, P. Vennéguès, N. Bozzolo |
⋄ Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polarAlN epitaxial layers N. Stolyarchuk, T. Markurt, A. Courville, K. March, O. Tottereau, P. Vennéguès, and M. Albrecht |
⋄ Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates M. Khoury, O. Tottereau, G. Feuillet, P. Vennéguès, and J. Zúñiga-Pérez |
⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil |
⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing3C-SiC membranes R. Khazaka, J.-F. Michaud, P. Vennéguès, D. Alquier, and M. Portail |
⋄ Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber M. Vermillac, J.-F. Lupi,F. Peters,M. Cabié, P. Vennéguès,C. Kucera, T. Neisius, J. Ballato, W. Blanc |
⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault. |
⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiCgrowth direction R. Khazaka, J.-F. Michaud, P. Vennéguès, L. Nguyen, D. Alquier, and M. Portail |
⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates M. Khoury, P. Vennéguès, M. Leroux,V. Delaye, G. Feuillet and J. Zúñiga-Pérez |
⋄ Evidence of multimicrometric coherent γ' precipitates in a hot-forged γ –γ' nickel-based superalloy M.-A. Charpagne, P. Vennéguès, T. Billot, J.-M. Franchet and N. Bozzolo |
⋄ Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy X. S. Nguyen, H. W. Hou, P. De Mierry, P. Vennéguès, F. Tendille, A. R. Arehart, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua |
⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry |
⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont |
⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil |
⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies |
⋄ Polarity Control in Group-III Nitrides beyond Pragmatism S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo,
A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht |
⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil |
⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez |
⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001) R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud |
⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez |
⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz |
⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
|
⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald |
⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud |
⋄ Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire P. Vennéguès, F. Tendille and P. De Mierry |
⋄ Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate F. Tendille, M. Hugues, P. Vennéguès, M. Teisseire and P. De Mierry |
⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud |
⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil |
⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès |
⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger |
⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire |
⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies |
⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil |
⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi |
⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez |
⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau |
⋄ Quantitative determination of compositional profiles using HAADF image simulations R. El Bouayadi, M. Korytov, P.A. van Aken, P. Vennéguès, and M. Benaissa |
⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano |
⋄ On the growth of Zn1–xMnxO thin films by plasma-assisted MBE C. Deparis, C. Morhain, J. Zúñiga-Pérez, J.M. Chauveau, H. Kim-Chauveau, P. Vennéguès, M. Teisseire, B. Vinter |
⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier |
⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies |
⋄ Plasmon energy from strained GaN quantum wells M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken |
⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies |
⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau |
⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau
and P Vennéguès |
⋄ On the origin of basal stacking faults in nonpolar wurtzite films epitaxiallygrown on sapphire substrates P. Vennéguès, J.M. Chauveau, Z. Bougrioua, T. Zhu, D. Martin, and N. Grandjean |
⋄ Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson |
⋄ Fabrication and growth of GaN-based micro and nanostructures B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez |
⋄ Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar andsemipolar orientations P. Vennéguès |
⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck |
⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry,
M. Leroux, A. Courville, O. Tottereau and J. Massies |
⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies |
⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez |
⋄ Study of the epitaxial relationships between III-nitrides and M-planesapphire P. Vennéguès, T. Zhu, D. Martin, and N. Grandjean |
⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry |
⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry |
⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111) N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies |
⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies |
⋄ Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructureof Nonpolar AlN Films Grown on (1120) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy P. Vennéguès, S. Founta, H. Mariette, and B. Daudin |
⋄ Catalytic unzipping of carbon nanotubes to few-layer graphene sheets undermicrowaves irradiation I. Janowska , O. Ersen , T. Jacob, P. Vennéguès, D. Bégin, M.J. Ledoux, C. Pham-Huu |
⋄ Phase separation in GaN/AlGaN quantum dots M. Benaissa, L. Gu, M. Korytov, T. Huault, P.A. van Aken, J. Brault, and P. Vennéguès |
⋄ In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates P. Vennéguès, T. Zhu, Z. Bougrioua, D. Martin, J. Zúñiga-Pérez, and N. Grandjean |
⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski |
⋄ Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault, P. Vennéguès |
⋄ Anisotropic chemical etching of semipolar {10-1-1}/{10-1+1} ZnO crystallographic planes: polarity versus dangling bonds E. Palacios-Lidon, B. Pérez-Garcia, P. Vennéguès, J. Colchero, V. Muñoz-Sanjosé, and J. Zúñiga-Pérez |
⋄ Gallium Nitride: A Nanoscale Study Using Electron Microscopy and Associated techniques M. Benaissa and P. Vennéguès |
⋄ Growth and Characterization of Non-Polar (Zn,Mg)O/ZnO Quantum Wells and Multiple Quantum Wells J.M. Chauveau, B. Vinter, M. Laugt, M. Teisseire, P. Vennéguès, C. Deparis, J. Zúñiga-Pérez and C. Morhain |
⋄ Interface structure and anisotropic strain relaxation of non polar wurtzite (11-20) and (10-10) orientations: ZnO epilayers grown on sapphire J.M. Chauveau, P. Vennéguès, M. Laügt, C. Deparis, J. Zúñiga-Pérez and C. Morhain |
⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz |
⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson |
⋄ Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy P. Vennéguès, J.M. Chauveau, M. Korytov, C. deparis, J. Zúñiga-Pérez, and C. Morhain |
⋄ Investigation of the optical properties of epitaxial-lateral-overgrown GaN on R- and M-sapphire T. Gühne, Z. Bougrioua, M. Albrecht, P. Vennéguès, M. Leroux, M. Laügt, S. Ndiaye,
M. Teisseire, L. Nguyen, and P. Gibart |
⋄ Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) andsemipolar (11-22) GaN in relation to microstructural characterization T. Gühne, M. Albrecht, Z. Bougrioua, P. Vennéguès, and M. Leroux |
⋄ Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22)GaN formed by Epitaxial Lateral Overgrowth on sapphire T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux |
⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter |
⋄ Symmetry of wurtzite nanostructures with the c-axis in the layer plane P. Tronc and P. Vennéguès |
⋄ Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy J.M. Chauveau, M. Laügt, P. Vennéguès, M. Teisseire, B. Lo, C. Deparis, C. Morhain, and B. Vinter |
⋄ Anisotropic morphology of nonpolar a-plane quantum dots and quantum wells S. Founta, C. Bougerol, H. Mariette, B. Daudin and P. Vennéguès |
⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch |
⋄ Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on M-plane sapphire by metalorganic-vapor-phase-epitaxy P. Vennéguès, Z. Bougrioua and T. Guehne |
⋄ Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy J.M. Chauveau, D.A. Buell, M. Laugt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, and C. Morhain |
⋄ Growth and characterization of A-plane ZnO and ZnCoO based heterostructures J.M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, M. Tesseire-Doninelli, and G. Neu |
⋄ X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau and V. Muñoz -Sanjosé |
⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies |
⋄ Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux |
⋄ investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots M. Benaissa, P. Vennéguès, O. Tottereau, L. Nguyen and F. Semond
|
⋄ Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFTES Measured in Strong Inversion A. Pérez-Tomas, M. Vellvehi, N. Mestres, J. Millan, P. Vennéguès and J. Stoemenos |
⋄ Characterization of high-k Ta/sub 2/Si oxidized films on 4H-SiC and Si substrates as gate insulator A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millan, N. Mestres, P. Vennéguès and J. Stoemenos |
⋄ Characterization of structural defects in GaN films grown on sapphire substrates P. Vennéguès, F. Mathal, and Z. Bougrioua |
⋄ Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE V.G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K.S. Zhuralev, P. Vennéguès |
⋄ Epitaxial orientation of III-Nitrides grown on R-plane sapphire by metalorganic-vapor-phase-epitaxy P. Vennéguès and Z. Bougrioua |
⋄ Growth of GaN/AlxGa1-xN-based Bragg reflectors on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition: Towards group III-nitride microcavities H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, P. Wisniewski, S. Grzanka, M. Krysko, O. Tottereau, P. Vennéguès, P. Perlin, M. Leszczynski, and T. Suski |
⋄ Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennéguès, A. Leycuras |
⋄ Structural and Electronic Properties of ZnMgO/ZnO Quantum Wells C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, and G. Neu |
⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies |
⋄ Submicron periodic poling and chemical patterning of GaN S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies |
⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1) S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier |
⋄ Ductile relaxation in cracked metal-organis chemical-vapor-deposition-grown AlGaN films on GaN J.M. Bethoux and P. Vennéguès |
⋄ Relaxation Mechanisms in MOVPE grown Al rich (Al,Ga)N/GaN Hetero-Structures P. Vennéguès, Z. Bougrioua, J.M. Bethoux, M. Azize, O. Tottereau |
⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111) Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies |
⋄ Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millian, N. Mestres, P. Vennéguès and J. Stoemenos |
⋄ Polarity inversion of GaN(0001) by a high Mg doping S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies |
⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies |
⋄ Plastic relaxation through buried cracks in AlGaN/GaN heterostructures J.M. Bethoux, P. Vennéguès, M. Laügt and P. De Mierry |
⋄ Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche |
⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111) F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont |
⋄ Atomic structure of pyramidal defects in Mg-doped GaN P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart |
⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond |
⋄ Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, and J. Christen |
⋄ In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle |
⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart |
⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart |
⋄ On the effect of high Mg doping on the polarity of GaN P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean |
⋄ 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie |
⋄ MBE-grown high-quality (Al,Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog |
⋄ High quality distributed Bragg refelctors based on AlxGa1-xN/GaN multilayers grown by MBE S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog |
⋄ Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie |
⋄ Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle |
⋄ Epitaxial Lateral Overgrowth of GaN on Silicon (111) E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart |
⋄ Crack-free thick GaN layers on silicon(111) by MOVPE E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart |
⋄ Epitaxial Lateral overgrowth of GaN B. Beaumont, P. Vennéguès, P. Gibart |
⋄ Stress control in GaN grown on silicon(111) by MOPVE E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart |
⋄ Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie |
⋄ Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111) H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart |
⋄ High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO H. Lahrèche, V. Bousquet, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart |
⋄ Phase separation in MOVPE AlxGa1-xN films deposited on 6H-SiC P. Vennéguès, H. Lahrèche |
⋄ Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films M. Benaïssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai |
⋄ Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart |
⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111) S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès |
⋄ Molecular beam epitaxy of ZnBeSe : influence of the substrate nature and epilayer properties C. Chauvet, E. Tournié, P. Vennéguès, J.P. Faurie |
⋄ Reduction mechanims for defect densities in GaN using one or two-step epitaxial lateral overgrowth methods P. Vennéguès, V. Bousquet, B. Beaumont, M. Vaille, P. Gibart |
Current contracts
Old contracts
⋄ TEM
Acquisition d'un nouveau microscope électronique en transmission (FEDER-Région Sud)
Projet Européen CRHEA, CEMEF, CCMA-UNS, Inphyni, Lagrange, OCA, CEPAM, IMRA (2020 - 2021)⋄ TEM
Acquisition d'un nouveau microscope électronique en transmission (Région)
Projet Régional CRHEA, CEMEF, CCMA-UNS, Inphyni, Lagrange, OCA, CEPAM, IMRA (2020 - 2020)⋄ TEM
Fonctionnement pour microscope électronique en transmission (Fédération Doeblin)
Projet National CRHEA, CEMEF, CCMA-UNS, Inphyni, Lagrange, OCA, CEPAM, IMRA (2021 - 2021)
Current supervisions
Ismail Madaci () Old supervisions
Rami Mantach (PhD Student) (2019) Natalia Stolyarchuk (PhD Student) (2016) Sakhawat Hussain (PhD Student) (2014) Maxim Korytov (Comment PhD Student) (2010) Valéria Bonito Oliva (PhD Student) () Romain Cohen (Stagiaire) (2018)
HDR
Structural properties of non and semipolar wurtzite semiconductors films
HDR defended in november 2009 at CRHEAPost-doc
PhD
Curriculum
