Patents (6)


Main avec index What do A1, A2, A3 and B codes mean after a publication number
X
  • A publication A1 is a request of european patent published with the research report
  • A document A2 matches this request published without the research report
  • The the research report is published later as document A3
  • The issued patent est publié as document B
X
  • Une publication A1 est une demande de brevet européen publiée avec le rapport de recherche
  • Un document A2 correspond à cette demande publiée sans le rapport de recherche
  • Le rapport de recherche est publié plus tard en tant que document A3
  • Le brevet délivré est publié en tant que document B

FR3001334 (B1)
06/05/2016

Method for the production of monilithic white diodes

G. Nataf, P. de Mierry, S. Chenot
CN105051917 (A), CN105051917 (B), EP2948987 (A1), FR3001334 (A1), US2016005918 (A1), JP2016508668 (A), US9728673 (B2), WO2014114731 (A1)


FR3003402 (B1)
04/11/2016

Monolithic light-emitting device

B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, P. De Mierry, S. Chenot, J. Massies
CN105122475 (A), CN105122475 (B), EP2973754 (A1), FR3003402 (A1), US2016043272 (A1), JP2016513878 (A), WO2014140118 (A1)


FR3021454 (A1)
27/11/2015

Method for manufacturing a semiconductor material including a semipolar III-Nitrie layer

P. de Mierry, F. Tendille, P. Vennéguès
EP3146558 (A1), US2017092482 (A1), JP2017522721 (A), WO2015177220 (A1)


FR3048002 (A1)
25/08/2017

Method making it possible to obtain a semi-polar nitride layer on a crystalline substrate

G. Feuillet, M. Khoury, P. Vennéguès, J. Zúñiga-Pérez
US2018182622 (A1)


FR3037713 (B1)
09/06/2017

Method making it possible to obtain on a crystalline substrate a semipolar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminum (Al)

M. Khoury, G. Feuillet, P. Vennéguès, J. Zúñiga-Pérez
EP3311394 (A1), FR3037711 (A1), FR3037713 (A1), US2018182622 (A1), JP2018520977 (A), WO2016202899 (A1)


FR3048002 (A1)

A method for obtaining a low defect semipolar nitride layer on a crystalline substrate

G. Feuillet, M. Khoury, P. Vennéguès, J. Zúñiga-Pérez
WO2017144429 (A1)