Highlights
Record power density aluminium gallium nitride barrier transistors (12/2019)

Researchers from IEMN, CRHEA, LAAS and Saint Gobain Lumilog claim
record power performance at 40GHz from aluminium gallium nitride
(AlGaN)-barrier high-electron-mobility transistors (HEMTs) on freestanding
gallium nitride substrates.
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A new semiconductor material (11/2019)

In collaboration with researchers from CEA-LETI in Grenoble, C2N
of Palaiseau and Max-Planck Institute in Stuttgart, a new semiconductor,
Al5+αSi5+δN12, was synthesized
by high temperature annealing of aluminum nitride films under silicon
flux. A high resolution transmission electron microscopy study combined
with theoretical calculations allowed to determine the crystalline
structure of this new material that could have applications for
the emission and detection of UV light as well as for the realization
of transistors.
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2nd UCA materials day (09/2019)

The second UCA materials day took place on September 13 in the premises of the IMRA company in Sophia Antipolis.
New holography method with GaN metasurfaces (07/2019)

European metrology project GIQS kick-off (06/2019)

Labex: GaNeX extended for 5 years (02/2019)

This support represents a financial commitment from the State for Research of € 444 million over 5 years for all the labex extended.
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Job: Lecturer position (02/2019)

The file submission limit is the 5th march 2019.
See the offer...