Patents (6)

- A publication A1 is a request of european patent published with the research report
- A document A2 matches this request published without the research report
- The the research report is published later as document A3
- The issued patent est publié as document B
- Une publication A1 est une demande de brevet européen publiée avec le rapport de recherche
- Un document A2 correspond à cette demande publiée sans le rapport de recherche
- Le rapport de recherche est publié plus tard en tant que document A3
- Le brevet délivré est publié en tant que document B
FR2977260 (B1)
19/07/2013
⋄ Method for manufacturing a thick epitaxial layer of Gallium Nitride ona silicon or similar substrate and layer obtained using said method
D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, Y. Cordier
CN103828019 (A), CN103828019 (B), EP2727133 (A1), FR2977260 (A1), US2014327013 (A1), JP2014527707 (A), KR20140096018 (A), TW201305397 (A), TWI468562 (B), US9093271 (B2), WO2013001014 (A1)
FR 2963985 (A1)
24/02/2012
⋄ Gallium nitride vertical Schottky diode, has heavily doped p-type and n-type gallium nitride guard rings respectively provided at peripheries of electrode and lightly doped layer, where electrode is arranged on lightly doped layer
D. Alquier, Y. Arnaud, Y. Cordier, E. Frayssinet, M. Kennard
WO2013084020 (A1)
13/06/2013
⋄ Normally-off high electron mobility transistor and integrated circuit
C. Caramel, Y. Cordier, P. Renaud
FR3049946 (B1)
13/04/2018
⋄ Process for fabricationg a micromechanical structure made of silicon carbide including at least one cavity
R. Khazaka, M. Portail, J-F. Michaud, D. Alquier
FR3049946 (A1), WO2017174709 (A1)
FR3047841 (B1)
25/05/2018
⋄ Electromechanical transducer based on doped gallium nitride
M. Faucher, Y. Cordier
FR3047841 (A1), WO2017140664 (A1)
FR3017242 (B1)
01/09/2017
⋄ Vertical Gallium Nitride Schottky diode
Y. Arnaud, D. Alquier, Y. Cordier
CN104821341 (A), CN204516775 (U), FR3017242 (A1), US2015221782 (A1)