Highlights Electro
CRHEA in the GaN4AP european project (12/2021)

The GaN4AP project has the ambitious target of making GaN-based electronics one of the main components in a large spectrum of power converter systems, with the possibility of drastically cutting energy losses in power electronic systems, while ensuring high-frequency and higher power density operation. Thank to this joint effort a large variety of applications will benefit from a boost in performance, without sacrificing the system size and cost.
Record power density RF HEMT on GaN (2019)

In this context, the growth of GaN HEMTs on commercial free-standing GaN substrates previously developed for high brightness light emitting diodes has been investigated as an alternative approach for high frequency applications.
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Thin channel GaN HEMT with 10 kV capability (2019)

Thanks to a very large band gap energy beyond 6 eV and high thermal conductivity, such semiconductor is very promising to overcome the limitations encountered with GaN based electron devices.
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GaN RF HEMT structures grown by MOCVD on CVD 3C-SiC/Si (2018)

In spite of large availability of low cost Silicon substrates, the high surface reactivity and the large mismatch in crystal lattice parameter and thermal expansion coefficientwith GaN make the growth tricky.
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THz intersubband absorption in GaN based heterostructures grown on Silicon substrate (2018)

- the possibility to build periodic heterostructures with energy levels separated with few tens of meV
- a large optical phonon energy which may enable the electron population inversion in quantum cascade lasers (QCLs) at room temperature
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Optical phase transition in semiconductor quantum metamaterials (2018)

Bystacking subwavelength-thick metallic and dielectric layers to form metamaterials, it is possible to realize unexpected behavior such as negative refraction.
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