The blue LEDs based on InGaN today achieve very high yields. Thanks to these blue LEDs coated with a phosphor converting blue to yellow or orange, it is possible to manufacture white light sources whose efficiency is unmatched. These devices are now well known and the research we are conducting is oriented along different axes:

  • Long-wave light emission (yellow-red) that requires InGaN alloys with a high In content that remains a challenge in terms of the structural and optical quality of these materials
  • Intelligent lighting with the particular objective of manufacturing transmitters allowing the independent control of the 3 red-green-blue colors. This basic brick is a necessary element for the development of high gloss and high-resolution µ-screens.
  • Epitaxy of LEDs on Si substrate. The advantage over the usual sapphire substrate is that it is available in large areas and can be easily removed (important for all the problematic report) and structured before growth. We have demonstrated epitaxies up to 8 inch substrate sizes
  • LEDs transferred from their Si substrate onto flexible adhesive tapes (Scotch tape) in collaboration with 3M and the IEMN (ANR project FLEXIGaN). The luminances obtained are 2 orders of magnitude higher than for organic flexible LEDs
Led de plusieurs couleurs pour obtenir une lumière blanche
Figure 1. LEDs whose color depends on the composition In and the thickness of the InGaN / GaN quantum wells used in the active zone. In combining several colors it is possible to obtain a white light
Leds sur substrat Si
Figure 2. MOCVD reactor loaded with an 8 inch Si substrate. LEDs Photos epitaxially grown on Si substrates with 115µm mesas. Technological manufacture LEDs are performed at LETI. The total area of the LEDs can be adjusted according to the number of interconnected mesas
Leds dflexibles
Figure 3. Flexible LEDs based on GaN

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