Name : Maud Nemoz
Status : Engineer
Grade : IR1
Team(s) : SCR
☎ : +33 4 93 95 4210
Functions
Head of the SCR team
Activities
Responsible for the X-ray Diffraction (XRD) activity in the SCR team
Publications (37)
⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier |
⋄ Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy M. Nemoz, F. Semond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche,J. Zúñiga-Pérez |
⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li |
⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz |
⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier |
⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond |
⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier |
⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil |
⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault. |
⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz |
⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
|
⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald |
⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès |
⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger |
⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi |
⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau |
⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter |
⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau |
⋄ Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau |
⋄ Polarized photoluminescence from nonpolar (11-20) (Ga,In)N multi-quantum-wells T. Gühne, Z. Bougrioua, M. Nemoz, R. Cmielowski, T. Bretagnon, B. Gil, M. Leroux |
⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier |
⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry |
⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry |
⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
|
⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf |
⋄ Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf |
⋄ Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf |
⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier |
⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz |
⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier |
⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz |
⋄ Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode T. Gühne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf |
⋄ Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22)GaN formed by Epitaxial Lateral Overgrowth on sapphire T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux |
⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter |
⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates M. Portail, M. Nemoz, M. Zielinski, T. Chassagne |
⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch |
⋄ Sensitivity of synchrotron radiation x-ray diffraction to the chemical ordering in epitaxial perovskite multilayers M. Nemoz, E. Dooryhee, J.L. Hodeau, C. Dubourdieu, H. Roussel, P. Bayle-Guillemaud |
Curriculum
Doctoral thesis entitled: "Nano-structural study of ferroelectric oxide super networks", Institut Néel in Grenoble, 2004.
Diploma of Physicist Engineer, National School of Physics, Electronics and Materials "Grenoble INP - Phelma", 2001.
