Fonctions

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Responsable du Service Commun de Recherche (SCR).
Responsable de l'activité Diffraction des rayons X (DRX) dans l'équipe SCR.

Publications (44)

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⋄ Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications R. Elwaradi, E. Frayssinet, S. Chenot, Y. Bouyer, M. Nemoz, Y. Cordier Microelectron Eng, 277,  112017, (2023) - Article de conférence

⋄ High Al-content AlGaN channel high electron mobility transistors on silicon substrate J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, and F. Medjdoub Advances in Electrical Engineering, Electronics and Energy, 3,  100114, (2023) - Papier régulier

⋄ Effects of GaN channel downscaling in AlGaN-GaN high electron mobility transistor structures grown on AlN bulk substrate R. Elwaradi, J. Mehta, T. H. Ngo, M. Nemoz, C. Bougerol, F. Medjdoub, Y. Cordier J. Appl. Phys., 133,  145705, (2023) - Papier régulier

⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier APL Materials, 11,  031105, (2023) - Papier régulier

⋄ InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC Julien Bosch, Lucie Valera, Chiara Mastropasqua, Adrien Michon, Maud Nemoz, Marc Portail, Jesús Zúñiga-Pérez, Maria Tchernycheva, Blandine Alloing, Christophe Durand Choisir un journal..., 275,  111995, (2023) - Article de conférence

⋄ (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission Aly Zaiter, Nikita Nikitskiy, Maud Nemoz, Phuong Vuong, Vishnu Ottapilakkal, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault Nanomaterials, 13,  2404, (2023) - Papier régulier

⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier J. Cryst. Growth, 593,  126779, (2022) - Papier régulier

⋄ Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault Materials, 15,  8602, (2022) - Papier régulier

⋄ Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy M. Nemoz, F. Semond, S. Rennesson, M. Leroux, S. Bouchoule, G. Patriarche,J. Zúñiga-Pérez Superlattices Microstruct., 150,  106801, (2021) - Papier régulier

⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz J. Cryst. Growth, 507,  220, (2019) - Papier régulier

⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li Phys. Stat. Sol. A, 216(24),  1900655, (2019) - Papier régulier

⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond Phys. Stat. Sol. A, 215,  1700640, (2018) - Papier régulier

⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault. J. Cryst. Growth, 461,  10-15, (2017) - Papier régulier

⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier Phys. Stat. Sol. A, 215(9),  1700642, (2017) - Papier régulier

⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil J. Appl. Phys., 122,  085706, (2017) - Papier régulier

⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier Phys. Stat. Sol. A, 214,  1600419, (2017) - Article de conférence

⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz J. Cryst. Growth, 433,  165-171, (2016) - Papier régulier

⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano J. Cryst. Growth, 434,  25, (2016) - Papier régulier

⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès J. Cryst. Growth, 419,  88-93, (2015) - Papier régulier

⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald J. Appl. Phys., 118,  024303, (2015) - Papier régulier

⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger Phys. Stat. Sol. C, 3-4,  498-501, (2014) - Article de conférence

⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau J. Cryst. Growth, 388,  35, (2014) - Papier régulier

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi J. Cryst. Growth, 398,  23, (2014) - Papier régulier

⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter Appl. Phys. Lett., 103,  262104, (2013) - Papier régulier

⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau Appl. Phys. Express, 6,  042101, (2013) - Papier régulier

⋄ Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau Appl. Phys. Lett., 99,  261910 , (2011) - Papier régulier

⋄ Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf Appl. Phys. Lett., 96,  231918, (2010) - Papier régulier

⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond J. Cryst. Growth, 312 - n° 19,  2683-2688 , (2010) - Papier régulier

⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier AIP Conf Proc, 1292,  115, (2010) - Article de conférence

⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry Nanoscale Res. Lett., 5,  1878, (2010) - Article de conférence

⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry J. Cryst. Growth, 312,  2625, (2010) - Papier régulier

⋄ Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf Appl. Phys. Lett., 94,  191903, (2009) - Papier régulier

⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier Mat. Sci. For., 615-617,  169, (2009) - Article de conférence

⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz J. Appl. Phys., 105,  083505, (2009) - Papier régulier

⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz Phys. Stat. Sol. (c), S2,  897, (2009) - Article de conférence

⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf Jpn. J. Appl. Phys., 48,  031002, (2009) - Papier régulier

⋄ Polarized photoluminescence from nonpolar (11-20) (Ga,In)N multi-quantum-wells T. Gühne, Z. Bougrioua, M. Nemoz, R. Cmielowski, T. Bretagnon, B. Gil, M. Leroux Proc. 29th Int. Conf. Physics of Seminconductors ICPS, 1199,  191, (2009) - Article de conférence

⋄ Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode T. Gühne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf Electron. Lett., 44,  231, (2008) - Papier régulier

⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates M. Portail, M. Nemoz, M. Zielinski, T. Chassagne Mat. Sci. For., 600-603,  231, (2008) - Article de conférence

⋄ Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22)GaN formed by Epitaxial Lateral Overgrowth on sapphire T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux Phys. Rev. B, 77,  075308, (2008) - Papier régulier

⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier Mater. Res. Soc. Symp. Proc., 1069,  1069-D07-09, (2008) - Article de conférence

⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter Appl. Phys. Lett., 93,  081116, (2008) - Papier régulier

⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch Phys. Stat. Sol. (c), 4, No. 1,  137-140, (2007) - Article de conférence

⋄ Sensitivity of synchrotron radiation x-ray diffraction to the chemical ordering in epitaxial perovskite multilayers M. Nemoz, E. Dooryhee, J.L. Hodeau, C. Dubourdieu, H. Roussel, P. Bayle-Guillemaud J. Appl. Phys., 100,  124110, (2006) - Papier régulier

Membre du Conseil de Direction depuis 2016.
Membre du Conseil de Laboratoire depuis 2012.
Membre expert pour les concours internes CNRS en 2011 et 2012.

Enseignements à l'Université de Nice SA (Polytech Nice) sur la physique générale (TP) et l’électromagnétisme (TD) pour un volume d'environ 100h par an de 2011 à 2018.
Enseignements à l’Université Grenoble Alpes en TP d’électronique (96h/an) de 2001 à 2004.

Cursus

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Thèses de doctorat intitulée : « Etude nano-structurale de super-réseaux d’oxydes ferroélectriques », Institut Néel à Grenoble, 2004.
Diplôme d’Ingénieur Physicien, École nationale supérieure de physique, électronique et matériaux « Grenoble INP - Phelma », 2001.