
Nom : Pierre-Marie Coulon
Statut : Ingénieur
Grade : IR2
Équipe(s) : Nano
☎ : +33 4 93 95 4216
Fonctions
Activités
Publications (10)
⋄ Metasurface-enhanced light detection and ranging technology
Renato Juliano Martins, Emil Marinov, M. Aziz Ben Youssef, Christina Kyrou, Mathilde Joubert, Constance Colmagro, Valentin Gâté, Colette Turbil, Pierre-Marie Coulon, Daniel Turover, Samira Khadir, Massimo Giudici, Charalambos Klitis, Marc Sorel & Patrice Genevet
Nat. Commun, 13, 5724 , (2022) - Papier régulier⋄ Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE
Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing
Cryst. Growth Des., 22, 5206, (2022) - Papier régulier⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires
K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0, 0, (2021) - Papier régulier⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields
Sci Rep., 10, 5642, (2020) - Papier régulier⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials
P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5, 52, (2019) - Papier régulier⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12, 045007, (2019) - Papier régulier⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy
P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express., 9, 015502, (2016) - Papier régulier⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties
P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 252, 1096, (2015) - Papier régulier⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties
P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
J. Appl. Phys., 115, 153504, (2014) - Papier régulier⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes
P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez
Optics Express, 20, 18707, (2012) - Papier régulier
Cursus
Thèse soutenue au CRHEA le 20/05/2014. Sujet : Croissance et caractérisation de Nanofils de GaN