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1094 publications classées par date - Critères de recherche:


⋄ Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Emanuela Schilirò, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Giuseppe Greco, Fabrizio Roccaforte, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Marcin Krysko, Adrien Michon, Yvon Cordier, Ildiko Cora, Bela Pecz, Hassan Gargouri, Ra
Mat Sci Semicon Proc, 97, 35-39, (2019)

⋄ Kapitza thermal resistance characterization of epitaxial graphene-SiC(0001) interface

G. Hamaoui, R. Dagher, Y. Cordier, A. Michon, S. Potiron, M. Chirtoc, and N. Horny
Appl. Phys. Lett., 114, 1601, (2019)

⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits

F. TABATABA-VAKILI, S. RENNESSON, B. DAMILANO, E. FRAYSSINET, J.-Y. DUBOZ, F. SEMOND, I. ROLAND, B. PAULILLO, R. COLOMBELLI, M. EL KURDI, X. CHECOURY, S. SAUVAGE, L. DOYENNETTE, C. BRIMONT, T. GUILLET, B. GAYRAL, AND P. BOUCAUD
Opt. Express, 27, 11800, (2019)

⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet
Adv. Opt. Mater., , 1801271, (2019)

⋄ Role of In in hydrogenation of N-related complexes in GaInNAs

T.Mou, S.Li, C.R.Brown, V.R.Whiteside, K.Hossain, M.Al Khalfioui, M.Leroux I.R.Sellers, B.Wang
ACS Appl. Electron. Mater., 1, 461, (2019)

⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12, 045007, (2019)

⋄ Competition between horizontal and vertical polariton lasing in planar microcavities

O. Jamadi, F. Réveret, D. Solnyshkov, P. Disseix, J. Leymarie, L. Mallet-Dida, C. Brimont, T. Guillet, X. Lafosse, S. Bouchoule, F. Semond, M. Leroux, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. B, 99, 085304, (2019)

⋄ GaN Schottky diodes for proton beam monitoring

J.-Y. Duboz, J. Zucchi, E. Frayssinet, P. Chalbet, S. Chenot, M. Hugues, J.-C. Grini, R. Trimaud, M. Vidal and J. Hérault
Biomed. Phys. Eng. Express, 5, 025015, (2019)

⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz
J. Cryst. Growth, 507, 220, (2019)

⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression

Rami Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet
J. Appl. Phys., 125, 035703, (2019)

⋄ Optimization and uncertainty quantification of gradient index metasurfaces

NIKOLAI SCHMITT, NIKLAS GEORG, GAUTHIER BRIÈRE, DIMITRIOS LOUKREZIS, SÉBASTIEN HÉRON, STÉPHANE LANTERI, CHARALAMBOS KLITIS, MARC SOREL, ULRICH RÖMER, HERBERT DE GERSEM, STÉPHANE VÉZIAN, AND PATRICE GENEVET
Opt. Mater. Express, 9, 892-910, (2019)

⋄ Room Temperature Electrically Driven Ultraviolet Plasmonic Lasers

X. Yang, P.-N Ni, P.-T. Jing, L.-G. Zhang, R.-M. Ma, C.-X. Shan, D.-Z. Shen, and P. Genevet
Adv. Opt. Mater., , 1801681, (2019)

⋄ On the morphologies of oxides particles in optical fibers: Effect of the drawing tension and composition

M. Vermillac, H. Fneich, J. Turlier, M. Cabie, C. Kucera, D. Borschneck, F. Peters, P. Vennegues, T. Neisius, S. Chaussedent, D. R Neuville, A. Mehdi, J. Ballato, and W. Blanc
Opt. Mater., 87, 74-79, (2019)

⋄ Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells

A. Jollivet, B. Hinkov, S. Pirotta, H. Hoang, S. Derelle, J. Jaeck, M. Tchernycheva, R. Colombelli, A. Bousseksou, M. Hugues, N. Le Biavan, J. Tamayo-Arriola, M. Montes Bajo, L. Rigutti, A. Hierro, G. Strasser, J.M. Chauveau, and F. H. Julien
Appl. Phys. Lett., 113, 251104, (2018)

⋄ Edge-emitting polariton laser and amplifier based on a ZnO waveguide

O. Jamadi, F. reveret, P. Disseix, F. Medard, J. Leymarie, A. Moreau, D. Solnyshkov, C. Deparis, M. Leroux, E. Cambril, S. Bouchoule, J. Zúñiga-Pérez, and G. Malpuech
Light Sci Appl, 7, 82, (2018)

⋄ Mitigating Chromatic Dispersion with Hybrid Optical Metasurfaces

R. Sawant, P. Bhumkar, A.Y. Zhu, P. Ni, F. Capasso, and P. Genevet
Adv. Mater., 31, 1805555, (2018)

⋄ Outfitting Next Generation Displays with Optical Metasurfaces

I. Kim, G. Yoon, J. Jang, P. Genevet, K. Tae Nam, and J. Rho
ACS Photonics, 5 (10), 3876–3895, (2018)

⋄ Ga-doping of nonpolar m-plane ZnMgO with high Mg contents

J.Tamayo-Arriola, M.Montes Bajo, N. Le Biavan, D.Lefebvre, A.Kurtz, J.M.Ulloa, M.Hugues, J.M.Chauveau, A.Hierro
J. Alloys and Comp., 766, 436, (2018)

⋄ Metasurfaces: Physics and Applications

F. Ding, P. Genevet and S.I. Bozhevolnyi
Applied Sciences, 8, 1727, (2018)

⋄ Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

S. Matta, J. Brault, M. Korytov, T.Q. Phuong Vuong, C. Chaix, M. Al Khalfioui, P. Vennéguès, J. Massies, B. Gil
J. Cryst. Growth, 499, 40, (2018)

⋄ Enhanced excitonic emission efficiency in porous GaN

T.H. Ngo, B. Gil, T.V. Shubina, B. Damilano, S. Vezian, P. Valvin, J. Massies
Sci Rep., 8, 15767, (2018)

⋄ Well-ordered ZnO nanowires with controllable inclination on semipolar ZnO surfaces by chemical bath deposition

T. Cossuet, H. Roussel, J.M. Chauveau, O. Chaix-Pluchery, J.L. Thomassin, E. Appert and Vincent Consonni
Nanotechnology, 29, 475601, (2018)

⋄ Solving thermal issues in tensile-strained Ge microdisks

A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, F. Boeuf, P. Boucaud
Opt. Express, 26, 28376, (2018)

⋄ Intentional polarity conversion of AlN epitaxial layers by oxygen

N. Stolyarchuk, T. Markurt, A. Courville, K. March, J. Zúñiga-Pérez, P. Vennéguès & M. Albrecht
Sci Rep., 8, 14111, (2018)

⋄ Breaking the Intersubband Selection Rules for Absorption with Quantum Wells: Light Polarization Sensitivity under Normal Incidence

M. Montes Bajo, J. Tamayo-Arriola, N. Le Biavan, J.M. Ulloa, P. Vennéguès, D. Lefebvre, M. Hugues, J.-M. Chauveau, A. Hierro
Phys. Rev. Applied, 10, 034022, (2018)

⋄ Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

B. Damilano, M. Lesecq, D. Zhou, E. Frayssinet, S. Chenot, J. Brault, N. Defrance, A. Ebongue, Y. Cordier, V. Hoel
IEEE Photonic Tech L, 30, 1567, (2018)

⋄ Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

E. Di Russo, F. Moyon, N. Gogneau, L. Largeau, E. Giraud, J.F. Carlin, N. Grandjean, J.M. Chauveau, M. Hugues, I. Blum, W. Lefebvre, F. Vurpillot, D. Blavette, and L. Rigutti
J. Phys. Chem. C, 122, 16704, (2018)

⋄ Evidence of exciton complexes in non polar ZnO/(Zn,Mg)O A-plane quantum well

M.J. Mohammed Ali, J.M.Chauveau, T.Bretagnon
Superlattices Microstruct., 120, 410, (2018)

⋄ Modelling of free-form conformal metasurfaces

K. Wu, P. Coquet, Q. J. Wang and P. Genevet
Nat. Commun, 9, 3494, (2018)

⋄ Screening and engineering of colour centres in diamond

T. Lühman,N. Raatz, R. John, M. Lesik, J. Rödiger, M. Portail, D. Wildanger, F. Kleibler, K. Nordlund, A. Zaitsev, J-F. Roch, A. Tallaire, J. Meijer and S. Pezzagna
J. Phys. D: Appl. Phys., 1, 1, (2018)

⋄ Multisubband Plasmons in Doped ZnO Quantum Wells

M.Montes Bajo, J. Tamayo-Arriola, M. Hugues, J. M. Ulloa, N. Le Biavan, R. Peretti, F. H. Julien, J. Faist, J.M. Chauveau, and A. Hierro
Phys. Rev. Applied, 10, 024005, (2018)

⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon

F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud
ACS Photonics, 5, 3643, (2018)

⋄ Chondrules as direct thermochemical sensors of solar protoplanetary disk gas

G. Libourel, M. Portail
Science_Advances, 4(7), eaar3321, (2018)

⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range

J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil
Semicond. Sci. Tech., 33, 075007, (2018)

⋄ Universal description of III-V/Si epitaxial growth processes

I. Lucci,1 S. Charbonnier,2 L. Pedesseau,1 M. Vallet,3 L. Cerutti,4 J.-B. Rodriguez,4 E. Tournié,4 R. Bernard,1 A. Létoublon,1N. Bertru,1 A. Le Corre,1 S. Rennesson,5 F. Semond,5 G. Patriarche,6 L. Largeau,6 P. Turban,2 A. Ponchet,3 and C. Cornet1,*
Phys. Rev. Materials, 2, 060401(R), (2018)

⋄ Proposition of a model elucidating the AlN-on-Si (111) microstructure

N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouvière, G. Feuillet, and P. Vennéguès
J. Appl. Phys., 123, 215701, (2018)

⋄ A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

R. Dagher, E. Blanquet, C. Chatillon, T. Journot, M. Portail, L. Nguyen, Y. Cordier and A. Michon
Cryst. Eng. Comm., 20, 3702-3710, (2018)

⋄ Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH3-MBE

S. Rennesson, M. Leroux, M. Al Khalfioui, M. Nemoz, S. Chenot, J. Massies, L. Largeau, E. Dogmus, M. Zegaoui, F. Medjdoub, and F. Semond
Phys. Stat. Sol. A, 215, 1700640, (2018)

⋄ γ′ precipitates with a twin orientation relationship to their hosting grain in a γ-γ′ nickel-based superalloy

S. Vernier, J.-M. Franchet, C. Dumont, P. Vennéguès, N. Bozzolo
Scr. Mater., 153, 10, (2018)

⋄ Loss analysis in nitride deep ultraviolet planar cavity

Z. Zheng, Y. Li, O. Paul, H. Long, S. Matta, M. Leroux, J. Brault, L. Ying, Z. Zheng, and B. Zhang
J. Nanophotonics, 12, 043504, (2018)

⋄ Time-resolved photoluminescence investigation of (Mg,Zn)O alloy growth on a non-polar plane

M.J. Mohammed Ali, J.M. Chauveau, T. Bretagnon
Superlattices Microstruct., 116, 105, (2018)

⋄ Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN

C.-M. Lee, J. Schacht, H. Warring, H. J. Trodahl, B. J. Ruck, S. Vézian, N. Gaston, and F. Natali
J. Appl. Phys., 123, 115106, (2018)

⋄ Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells

A. Hierro, M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J.M. Ulloa, N. Le Biavan, R. Peretti, F. Julien, J. Faist, J.-M. Chauveau
Proc. SPIE, 10533, 105331K, (2018)

⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)

S. Matta, J. Brault, T.-H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil
Superlattices Microstruct., 114, 161, (2018)

⋄ Electron transport in heavily doped GdN

T. Maity, H.J. Trodahl, F. Natali, and B.J. Ruck and S. Vézian
Phys. Rev. Materials, 2, 014405, (2018)

⋄ Gallium nitride MEMS resonators: how residual stress impacts design and performances

C. Morelle, D. Théron, J. Derluyn, S. Degroote, M. Germain, V. Zhang, L. Buchaillot, B. Grimbert, P. Tilmant, F. Vaurette, I. Roch-Jeune, V. Brändli, V. Avramovic, E. Okada, M.Faucher
IIEEE DTIP, 24, 371–377, (2018)

⋄ Crack statistics and stress analysis of thick GaN on patterned silicon substrate

T. Hossain, M. J. Rashid, E. Frayssinet, N. Baron, B. Damilano, F. Semond, J. Wang, L. Durand, A. Ponchet, F. Demangeot and Y. Cordier
Phys. Stat. Sol. B, , 1700399, (2018)

⋄ A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

R. Dagher, E. Blanquet, C. Chatillon, T. Journot, M. Portail, L. Nguyen, Y. Cordiera and A. Michon
Cryst. Eng. Comm., 20, 3702, (2018)

⋄ Influence of aluminum incorporation on mechanical properties of 3C-SiC epilayers

J.F. Michaud, M. Zielinski, J. Ben Messaoud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 924, 318-321, (2018)

⋄ Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs

H. Yacoub, T. Zweipfennig, H. Kalisch, A. Vescan, A. Dadgar, Matthias Wieneke, Jürgen Bläsing, A. Strittmatter, Stephanie Rennesson, and Fabrice Semond
Phys. Stat. Sol. A, 2018, 1700638, (2018)

⋄ Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions

N. Le Biavan, M. Hugues, M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, D. Lefebvre, Y. Cordier, B. Vinter, F.H. Julien, A. Hierro, and J.M. Chauveau
Appl. Phys. Lett., 111, 231903, (2017)

⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate

B. Damilano, S. Vézian, and J. Massies
Phys. Stat. Sol. B, 1, 1700392, (2017)

⋄ Laser damage of free-standing nanometer membranes

Y. Morimoto, I. Roland, S. Rennesson, F. Semond, P. Boucaud and P. Baum
J. Appl. Phys., 122, 215303, (2017)

⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

B. Damilano, S. Vézian, and J. Massies
Opt. Express, 25, 33243, (2017)

⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate

R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, , 1700642, (2017)

⋄ Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

F. Giannazzo, G. Fisichella, G. Greco, E. Schiliro, I. Deretzis, R. Lo Nigro, A. La Magna, F. Roccaforte, F. Iucolano, S. Lo Verso, S. Ravesi, P. Prystawko, P. Kruszewski, M. Leszczynski, R. Dagher, E. Frayssinet, A. Michon, Y. Cordier
Phys. Stat. Sol. A, , 1700653, (2017)

⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer

E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 214, 1600419, (2017)

⋄ Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

M. Khoury, O. Tottereau, G. Feuillet, P. Vennéguès, and J. Zúñiga-Pérez
J. Appl. Phys., 122, 105108, (2017)

⋄ The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

N. Chery, T.H. Ngo, M.P. Chauvat, B. Damilano, A. Courville, P. De Mierry, T. Grieb, T. Mehrtens, F.F. Krause, K. MüLler-Caspary, M. Schowalter, B. Gil, A. Rosenauer, and P. Ruterana
J. Microsc., 268, 305, (2017)

⋄ Internal quantum efficiency in polar and semipolar (11–22) In x Ga 1-x N/In y Ga 1-y N quantum wells emitting from blue to red

T. H. Ngo, N. Chery, P. Valvin, A. Courville, P. de Mierry, B. Damilano, P. Ruterana, B. Gil
Superlattices Microstruct., 1, 1, (2017)

⋄ Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers

N. Stolyarchuk, T. Markurt, A. Courville, K. March, O. Tottereau, P. Vennéguès, and M. Albrecht
J. Appl. Phys., 122, 155303, (2017)

⋄ Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Y. Cordier, R. Comyn, E. Frayssinet, M. Khoury, M. Lesecq, N. Defrance, and J.-C. De Jaeger
Phys. Stat. Sol. A, 10, 1700637, (2017)

⋄ ZnCdO: Status after 20 years of research

J. Zúñiga-Pérez
Mat Sci Semicon Proc, 69, 36, (2017)

⋄ Hybrid multiple diffraction in semipolar wurtzite materials: (01-12)-oriented ZnMgO/ZnO heterostructures as an illustration

E. de Prado, M. C. Martinez-Tomas, C. Deparis, V. Munoz-Sanjosé, and J. Zúñiga-Pérez
J. Appl. Cryst., 50, 1165, (2017)

⋄ Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

F. Tabataba-Vakili, I. Roland, T.-M.o Tran, X. ChecouryMoustafa El Kurdi,1 S. Sauvage, C. Brimont, T. Guillet, S. Rennesson, J.Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 111, 131103, (2017)

⋄ Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

S. Latrach, E. Frayssinet, N. Defrance, S. Chenot, Y. Cordier, C. Gaquière and H. Maaref
Current Applied Physics, 17, 1601-1608, (2017)

⋄ Les Métasurfaces, des composants optiques fonctionnels ultra-minces

P. Genevet, P. Chavel, N. Bonod
Photoniques, 87, 25, (2017)

⋄ Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

S. Matta, J. Brault, T. H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil
J. Appl. Phys., 122, 085706, (2017)

⋄ Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

T. H. Ngo, B. Gil, B. Damilano, P. Valvin, A. Courville, and P. de Mierry
J. Appl. Phys., 122, 063103, (2017)

⋄ Three-dimensional atomic-scale investigation of ZnO-MgZnO m-plane heterostructures

E. Di Russo, L. Mancini, F. Moyon, S. Moldovan, J. Houard, F. H. Julien, M. Tchernycheva, J.M. Chauveau, M.Hugues, G. Da Costa, I. Blum, W. Lefebvre, D. Blavette, and L. Rigutti
Appl. Phys. Lett., 111, 032108, (2017)

⋄ Freestanding dielectric nanohole array metasurface for mid-infrared wavelength applications

J. R. Ong, H. S. Chu, V. H. Chen, A. Y. Zhu, and P. Genevet
Opt. Lett., 42, 2639, (2017)

⋄ Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation

T. Kaldewey, S. Lüker, A. V. Kuhlmann, S. R. Valentin, J.M. Chauveau, A. Ludwig, A. D. Wieck, D. E. Reiter, T. Kuhn, and R. J. Warburton
Phys. Rev. B, 95, 241306(R), (2017)

⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs

C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers
RSC Adv., 7, 25353, (2017)

⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4, 1600450, (2017)

⋄ A combined growth process for state-of-the-art GaN on silicon

G. Gommé, E. Frayssinet, Y. Cordier, and F. Semond
Phys. Stat. Sol. A, 4, 1600449, (2017)

⋄ Non-metal to metal transition in n-type ZnO single crystal materials

S. Brochen, G. Feuillet, J.L. Santailler, R. Obrecht, M. Lafossas, P. Ferret, J.M. Chauveau,and J. Pernot
J. Appl. Phys., 121, 095704, (2017)

⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault.
J. Cryst. Growth, 461, 10-15, (2017)

⋄ Intersubband absorption in m-plane ZnO/ZnMgO MQWs

M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, M. Tchernycheva, F. H. Julien, R. Peretti, J. Faist, M. Hugues, J. M. Chauveau, A. Hierro
Proc. SPIE, 10105, 101050O-1, (2017)

⋄ Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system

T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, and R. Colombelli
Appl. Phys. Lett., 110, 131102, (2017)

⋄ Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy

F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck
MRS Advances, 2, 189, (2017)

⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films

J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali
MRS Advances, 2, 165, (2017)

⋄ Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber

M. Vermillac, J.-F. Lupi,F. Peters,M. Cabié, P. Vennéguès,C. Kucera, T. Neisius, J. Ballato, W. Blanc
J. Am. Ceram. Soc., , 1–6, (2017)

⋄ Optically Anisotropic Media: New Approaches to the Dielectric Function, Singular Axes, Raman Scattering Intensities and Microcavity Modes

M. Grundmann, C. Sturm, C. Kranert, S. Richter, R. Schmidt-Grund, C. Deparis, J. Zúñiga-Pérez
Phys. Stat. Sol. RRL, 11, 1600295, (2017)

⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes

R. Khazaka, J.-F. Michaud, P. Vennéguès, D. Alquier, and M. Portail
Appl. Phys. Lett., 110, 081602, (2017)

⋄ Recent improvements of flexible GaN-based HEMT technology

S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, Y. Cordier, B. Damilano, G. Tabares Jimenez, A. Ebongue, and V. Hoel
Phys. Stat. Sol. A, , 1600484, (2017)

⋄ Exceptional points in anisotropic photonic structures: from non-Hermitian physics to possible device applications

M. Grundmann, S. Richter, T. Michalsky, C. Sturm, J. Zúñiga-Pérez, and R. Schmidt-Grund
Proc. SPIE, 10105, 0277-786X, (2017)

⋄ Excitonic complexes in GaN/(Al,Ga)N quantum dots

D. Elmaghraoui, M. Triki, S. Jaziri, G. Muñoz-Matutano, M. Leroux, J. Martinez-Pastor
J. Phys. Cond. Mat., 29, 105302, (2017)

⋄ Anomalous DC and RF Behavior of Virgin AlGaN/AlN/GaN HEMTs

H. Sánchez Martín, O. García, S. Perez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. Gonzalez, J. Mateos, I.Iniguez de la Torre
Semicond. Sci. Tech., 32, 035011, (2017)

⋄ Recent advances in planar optics: from plasmonic to dielectric metasurfaces

P. Genevet, F. Capasso, F. Aieta, M. Khorasaninejad, and R. Devlin
Optica, 4 (1), 139-152, (2017)

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation

B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies
J. Cryst. Growth, 477, 262, (2017)

⋄ Anisotropic Surface Plasmon Polariton Generation Using Bimodal V‑Antenna Based Metastructures

D. Wintz, A. Ambrosio, A. Y. Zhu, P. Genevet, and F. Capasso
ACS Photonics, 4 (1), 22-27, (2017)

⋄ Inkjet‐Printed Nanocavities on a Photonic Crystal Template

F. SF Brossard, V. Pecunia, A. J. Ramsay, J. P. Griffiths, M. Hugues, H. Sirringhaus
Adv. Mater., 29, 1704425, (2017)

⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A, , , (2017)

⋄ Ion-induced interdiffusion of surface GaN quantum dots

C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig
Nuclear Instruments and Methods in Physics Research B, 409, 107, (2017)

⋄ Phase tuned entangled state generation between distant spin Qubits

R. Stockill, M. J. Stanley, L. Huthmacher, E. Clarke, M. Hugues, A. J. Miller, C. Matthiesen, C. Le Gall, and M. Atatüre
Phys. Rev. Lett., 119, 010503, (2017)

⋄ Efficient second harmonic generation in low-loss planar GaN waveguides

M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25, 23035-23044, (2017)

⋄ Deep-level spectroscopy in metal–insulator–semiconductor structures

A. Kurtz, E. Muñoz, J.M. Chauveau and A. Hierro
J. Phys. D: Appl. Phys., 50, 065104 , (2017)

⋄ Improving a solid-state qubit through an engineered mesoscopic environment

G. Éthier-Majcher, D. Gangloff, R. Stockill, E. Clarke, M. Hugues, C. Le Gall, M. Atatüre
Phys. Rev. Lett., 119, 130503, (2017)

⋄ Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction

T.H. Ngo, B. Gil, B. Damilano, K. Lekhal, P. De Mierry
Superlattices Microstruct., 103, 245, (2017)

⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet
Appl. Phys. Lett., 109, 231101, (2016)

⋄ GaN quantum dot polarity determination by X-ray photoelectron diffraction

O. Romanyuk, I. Bartoš, J. Brault, P. De Mierry, T. Paskova, P. Jiříčeka
Appl. Surf. Sci., 389, 1156, (2016)

⋄ Polarity in GaN and ZnO: Theory, measurements, growth and devices

J. Zúñiga-Pérez, V. Consonni, L. Lymperakis, X. Kong, A. Trampert, S. Fernandez-Garrido, O. Brandt, H. Renevier, S. Keller, K. Hestroffer, M. R. Wagner, J. S. Reparaz, F. Akyol, S. Rajan, S. Rennesson, T. Palacios, and G. Feuillet
Appl. Phys. Rev., 3, 041303, (2016)

⋄ Ultraviolet light emitting diodes using III-N quantum dots

J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55, 95, (2016)

⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates

M. Khoury, P. Vennéguès, M. Leroux,V. Delaye, G. Feuillet and J. Zúñiga-Pérez
J. Phys. D: Appl. Phys., 49, 475104, (2016)

⋄ Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth

B. Alloing et J. Zúñiga-Pérez
Mat Sci Semicon Proc, 55, 51, (2016)

⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN

J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali
Cryst. Growth Des. , 16, 6454, (2016)

⋄ The 2016 oxide electronic materials and oxide interfaces roadmap

M. Lorenz, M. S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F. K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, J. Zúñiga-Pérez, D. J. Rogers, F.
J. Phys. D: Appl. Phys., 49, 433001, (2016)

⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

R. Khazaka, J.-F. Michaud, P. Vennéguès, L. Nguyen, D. Alquier, and M. Portail
J. Appl. Phys., 120, 185306, (2016)

⋄ Graphene integration with nitride semiconductors for high power and high frequency electronics

F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 214, 1600460, (2016)

⋄ High temperature electrical transport study of Si-doped AlN

S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J. Brault
Superlattices Microstruct., 98, 253, (2016)

⋄ High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx

F. Réveret, L. Bignet, W. Zhigang, X. Lafosse, G. Patriarche, P. Disseix F. Médard, M. Mihailovic, J. Leymarie, J. Zúñiga-Pérez and S. Bouchoule
J. Appl. Phys., 120, 093107, (2016)

⋄ Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

P. Leclaire, E. Frayssinet, C. Morelle, Y. Cordier, D. Théron and M. Faucher
J. Micromech. Microeng., 26, 105015, (2016)

⋄ Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

A. Shkurmanov, C. Sturm, J. Lenzner, G. Feuillet, F. Tendille, P. De Mierry, and M. Grundmann
AIP Adv, 6, 95013, (2016)

⋄ Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks

I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury & P. Boucaud
Sci Rep., 6, 34191, (2016)

⋄ Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions

D. Massarotti, B. Jouault, V. Rouco, S. Charpentier, T. Bauch, A. Michon, A. De Candia, P. Lucignano, F. Lombardi, F. Tafuri, and A. Tagliacozzo
Phys. Rev. B, 94, 054525, (2016)

⋄ Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

X. S. Nguyen, H. W. Hou, P. De Mierry, P. Vennéguès, F. Tendille, A. R. Arehart, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua
Phys. Stat. Sol. B, , , (2016)

⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality

F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry
Appl. Phys. Lett., 109, 082101, (2016)

⋄ Superconductivity in the ferromagnetic semiconductor samarium nitride

E. -M. Anton, S. Granville, A. Engel, S. V. Chong, M. Governale, U. Zülicke, A. G. Moghaddam, H. J. Trodahl, F. Natali, S. Vézian, and B. J. Ruck
Phys. Rev. B, 94, 024106, (2016)

⋄ Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder

J. Zúñiga-Pérez, L. Kappei, C. Deparis, F. Reveret, M. Grundmann, E. de Prado, O. Jamadi, J. Leymarie, S. Chenot, and M. Leroux
Appl. Phys. Lett., 108, 251904, (2016)

⋄ Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy

L. Wang, S. Guillemin, J.M. Chauveau, V. Sallet, F. Jomard, R. Brenier, V. Consonni, G. Brémond
Phys. Stat. Sol. C, 13, 576, (2016)

⋄ Anisotropic optical properties of a homoepitaxial (Zn, Mg) O/ZnO quantum well grown on a‐plane ZnO substrate

M. Ali, J. Mohammed, J.M. Chauveau, T. Bretagnon
Phys. Stat. Sol. C, 13, 598, (2016)

⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)

S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth, 450, 22, (2016)

⋄ Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO

M.D. Neumann, N. Esser, J.M. Chauveau, R. Goldhahn and M. Feneberg
Appl. Phys. Lett., 108, 221105, (2016)

⋄ First power performance demonstration of flexible AlGaN/GaN High Electron Mobility Transistor

S. Mhedhbi, M. Lesecq, P. Altuntas, N. Defrance, E. Okada, Y. Cordier, B. Damilano, G. Tabares-Jiménez, A. Ebongué, and V. Hoel
IEEE Electron Device Letters, 37, 553, (2016)

⋄ p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre
Mat. Sci. For., 858, 137-142, (2016)

⋄ Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

S. Contreras, L. Konczewicz, P. Kwasnicki, R. Arvinte, H. Peyre, T. Chassagne, M. Zielinski, M. Kayambaki, S. Juillaguet, K. Zekentes
Mat. Sci. For., 858, 249-252, (2016)

⋄ Traditional and emerging materials for optical metasurfaces

A. Y. Zhu, A. I. Kuznetsov, B. Luk'yanchuk, N. Engheta, and P. Genevet
Nanophotonics, DOI 10.1515/nanoph-2016-0032, , (2016)

⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes

G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier
IEEE Photonic Tech L, 28, 1661, (2016)

⋄ Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC

B. Jouault, S. Charpentier, D. Massarotti, A. Michon, M. Paillet, J. R. Huntzinger, A. Tiberj, A.-A. Zahab, T. Bauch, P. Lucignano, A. Tagliacozzo, F. Lombardi and F. Tafuri
J. Supercond. Nov. Magn., 29, 1145, (2016)

⋄ Polarity Control in Group-III Nitrides beyond Pragmatism

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht
Phys. Rev. Applied, 5, 054004, (2016)

⋄ Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

T. H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal, and P. De Mierry
Jpn. J. Appl. Phys., 55, 05FG10, (2016)

⋄ Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

R. Comyn, Y. Cordier, S. Chenot, A. Jaouad, H. Maher, V. Aimez
Phys. Stat. Sol. A, 213, 917-924, (2016)

⋄ Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zúñiga-Pérez
Phys. Rev. B, 93, 115205, (2016)

⋄ Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators

I. Roland, Y. Zeng, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, M. Gromovyi, J. Y. Duboz, F. Semond, M. P. de Micheli, and P. Boucaud
Opt. Express, 24, 9602, (2016)

⋄ Broadband mode conversion via gradient index metamaterials

H.X. Wang, Y.D. Xu, P. Genevet, J.-H. Jiang, and H.Y. Chen
Sci Rep., 6, 24529 , (2016)

⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil
Jpn. J. Appl. Phys., 55, 05FG06, (2016)

⋄ Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L. Wang, J.M. Chauveau, R. Brenier, V. Sallet, F. Jomard, C Sartel, G. Brémond
Appl. Phys. Lett., 108, 132103, (2016)

⋄ ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

A. Hierro, G. Tabares, M. Lopez-Ponce, J. M. Ulloa, A. Kurtz, E. Muñoz, V. Marín-Borrás, V. Muñoz-Sanjose, J.M. Chauveau
Proc. SPIE, 9749, 97490W, (2016)

⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies
Nano Lett., 16, 1863, (2016)

⋄ Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen

A. Kurtz, A. Hierro, M. Lopez-Ponce, G. Tabares and J.M. Chauveau
Semicond. Sci. Tech., 31, 035010, (2016)

⋄ Deep-UV nitride-on-silicon microdisk lasers

J. Sellés, C. Brimont, G. Cassabois, P. Valvin, T. Guillet, I. Roland, Y. Zeng, X. Checoury, P. Boucaud, M. Mexis, F. Semond & B. Gayral
Sci Rep., 6, 21650, (2016)

⋄ Pseudomorphic ZnO-based heterostructures: From polar through all semipolar to nonpolar orientations

M. Grundmann, and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 253, 351-360, (2016)

⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 253, 105-111, (2016)

⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth, 433, 165-171, (2016)

⋄ Measurement of bound states in the continuum by a detector embedded in a photonic crystal

R. Gansch, S. Kalchmair, P. Genevet, T. Zederbauer, H. Detz, A. M Andrews, W. Schrenk, F. Capasso, M. Lončar and G. Strasser
Light Sci Appl, 5, e16147, (2016)

⋄ Evidence of multimicrometric coherent γ' precipitates in a hot-forged γ –γ' nickel-based superalloy

M.-A. Charpagne, P. Vennéguès, T. Billot, J.-M. Franchet and N. Bozzolo
J. Microsc., 263, 106, (2016)

⋄ Controlling electromagnetic fields at boundaries of arbitrary geometries

J.Y.H. Teo, L. J. Wong, C. Molardi, and P. Genevet
Phys. Rev. A, 94, 023820, (2016)

⋄ Imaging of Photonic Crystal Localized Modes through Third-Harmonic Generation

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, and P. Boucaud
ACS Photonics, 3, 1240, (2016)

⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud
Appl. Phys. Lett., 108, 011608, (2016)

⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano
J. Cryst. Growth, 434, 25, (2016)

⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express., 9, 015502, (2016)

⋄ Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity

R. Hahe, C. Brimont, P. Valvin, T. Guillet, F. Li, M. Leroux, J. Zúñiga-Pérez, X. Lafosse, G. Patriarche, and S. Bouchoule
Phys. Rev. B, 92, 235308, (2015)

⋄ AlGaN/GaN High Electron Mobility Transistors grown by Ammonia Source Molecular Beam Epitaxy,

Y. Cordier
Gallium Nitride (GaN): Physics, Devices, and Technology, F.Medjdoub, CRC Press, 45-60, (2015)

⋄ Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

L. Wang, J. Laurent, J.M. Chauveau, V. Sallet, F. Jomard, and G. Brémond
Appl. Phys. Lett., 107, 192101, (2015)

⋄ Yellow–red emission from (Ga,In)N heterostructures

B. Damilano and B. Gil
J. Phys. D: Appl. Phys., 48, 403001, (2015)

⋄ Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

T.H. Ngo, B. Gil, P. Valvin, B. Damilano, K. Lekhal and P. De Mierry
Appl. Phys. Lett., 107, 122103, (2015)

⋄ Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier and F. Schopfer
Nat. Nanotechnol., , , (2015)

⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud
Acta Mater., 98, 336, (2015)

⋄ Transport of indirect excitons in ZnO quantum wells

Y.Y. Kuznetsova, F. Fedichkin, P. Andreakou, E.V. Calman, L.V. Butov, P.Lefebvre, T. Bretagnon, T. Guillet, M. Vladimirova, C. Morhain,and J.M. Chauveau
Opt. Lett., 40, 3667, (2015)

⋄ Towards high quality 3C-SiC membrane on a 3C-SiC pseudo substrate

R. Khazaka, E. Bahette, M. Portail, D. Alquier, J.F. Michaud
Materials Letters, 160, 28, (2015)

⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate

B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond
Phys. Stat. Sol. A, 212, 2297–2301, (2015)

⋄ Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

B. Damilano, J. Brault and J. Massies
J. Appl. Phys., 118, 024304, (2015)

⋄ Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

P. Vennéguès, F. Tendille and P. De Mierry
J. Phys. D: Appl. Phys., 48, 325103, (2015)

⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald
J. Appl. Phys., 118, 024303, (2015)

⋄ Native point defect energies, densities, and electrostatic repulsion across (Mg,Zn)O alloys

G.M. Foster, J. Perkins, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson
Phys. Stat. Sol. A, 212, 1448, (2015)

⋄ Optical characterization of p-type 4H-SiC epilayers

G. Liaugaudas, D. Dargis, P. Kawasnicki, H. Peyre, R. Arvinte, S. Juillaguet, M. Zielinski, K. Jarašiūnas
Mat. Sci. For., 821-823, 249-252, (2015)

⋄ Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

F. Tendille, M. Hugues, P. Vennéguès, M. Teisseire and P. De Mierry
Semicond. Sci. Tech., 30, 065001, (2015)

⋄ Impact of Mg content on native point defects in MgxZn1-xO (0 <= x <= 0.56)

J. Perkins, G.M. Foster, M. Myer, S. Mehra, J.M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L.J. Brillson
APL Materials, 3, 062801, (2015)

⋄ Comparative studies of n-type 4H-SiC: Raman vs Photoluminescence spectroscopy

P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, S. Juillaguet
Mat. Sci. For., 821-823, 237-240, (2015)

⋄ Raman investigation of heavily Al doped 4H-SiC layers grown by CVD

P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski,L. Konczewicz, S. Contreras, J. Camassel and S. Juillaguet
Mat. Sci. For., 806, 51, (2015)

⋄ Improved performance of GaInNAs solar cell after UV-activated hydrogenation

M. Fukuda, V. R. Whiteside, J. C. Keay, M. Al Khalfioui, M. Leroux, K. Hossain, T. D. Golding, I. R. Sellers
IEEE PVSC, , 1-3, (2015)

⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growth conditions on the array properties

P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 252, 1096, (2015)

⋄ Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS

R. Comyn, Y. Cordier, V. Aimez, and H. Maher
Phys. Stat. Sol. A, 212, 1145-1152, (2015)

⋄ Epitaxial challenges of GaN on silicon

F. Semond
MRS Bulletin, vol 40, 412-417, (2015)

⋄ Al(Ga)N/GaN High Electron Mobility Transistors on Silicon

Y. Cordier
Phys. Stat. Sol. A, 212, 1049-1058, (2015)

⋄ Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

P. Altuntas, F. Lecourt, A. Cutivet, N. Defrance, E. Okada, M. Lesecq, S. Rennesson, A. Agboton, Y. Cordier, V. Hoel, and J.C. De Jaeger
IEEE Electron. Device Lett., 36, 303, (2015)

⋄ Improved performance in GaInNAs solar cells by hydrogen passivation

M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui
J. Appl. Phys., 106, 141904, (2015)

⋄ Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier
Nat. Commun, 6, 6806, (2015)

⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil
Appl. Phys. Lett., 106, 142101, (2015)

⋄ Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

A. Pérez-Tomás, G. Catalàn, A. Fontserè, V. Iglesias, H. Chen, P.M. Gammon, M.R. Jennings, M. Thomas, C.A. Fisher, Y.K. Sharma, M. Placidi, M. Chmielowska, S. Chenot, M. Porti, M. Nafría and Y. Cordier
Nanotechnology, 26, 115203, (2015)

⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy

M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès
J. Cryst. Growth, 419, 88-93, (2015)

⋄ Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures

T.H. Ngo, D. Rosales, B. Gil, P. Valvin, B. Damilano, K. Lekhal, P. de Mierry
Proc. SPIE, 9363, 93630K, (2015)

⋄ Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Y. Zeng, I. Roland, X. Checoury, Z. Han, M. El Kurdi, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, M. Mexis, F. Semond, and P. Boucaud
Appl. Phys. Lett., 106, 081105, (2015)

⋄ ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors

A. Hierro, G. Tabares, M. Lopez-Ponce, E. Munoz, A Kurtz, B Vinter, J.M. Chauveau
Proc. SPIE, 9364, 93641H, (2015)

⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates

J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies
Proc. SPIE, 9363, 93630Z, (2015)

⋄ Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells

G. Tabares, A. Hierro, M. Lopez-Ponce, E. Muñoz, B. Vinter, and J.M. Chauveau
Appl. Phys. Lett., 106, 061114, (2015)

⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers

R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For., 821-823, 1003, (2015)

⋄ 3C-SiC: from electronic to MEMS devices

J.F. Michaud, M. Portail and D. Alquier
Advanced Silicon Carbide Devices and Processing , Edited by E. Saddow and F. La Via, Intech, ISBN 978-953-51-2168-8, (2015)

⋄ Photoluminescence study of Be-acceptors in GaInNAs epilayers

Y. Tsai, B. Barman, T. Scrace, M. Fukuda, V. R. Whiteside, I. R. Sellers, M. Leroux, M. Al Khalfioui, and A. Petrou
J. Appl. Phys., 117, 045705, (2015)

⋄ Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques

G. Liaugaudas, D. Dargis, P. Kwasnicki, R. Arvinte, M. Zielinski, K. Jarašiūnas
J. Phys. D: Appl. Phys., 48, 025103, (2015)

⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect

R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud
Mat. Sci. For., 821-823, 978, (2015)

⋄ Investigation of Aluminium incorporation in 4H-SiC epitaxial layers

R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet and H. Peyre
Mat. Sci. For., 45, 806, (2015)

⋄ 3C-SiC : new interest for MEMS devices

J.F. Michaud, M. Portail, T. Chassagne, M .Zielinski and D. Alquier
Mat. Sci. For., 3, 806, (2015)

⋄ Highly resistive epitaxial Mg-doped GdN thin films

C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett., 106, 022401, (2015)

⋄ Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers

R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre
Mat. Sci. For., 821-823, 149, (2015)

⋄ Gallium Nitride as an electromechanical material

M. Rais-Zadeh, V. Gokhale, A. Ansari, M. Faucher, D. Theron, Y. Cordier, L. Buchaillot
IEEE J.MEMS, 23, 1252-1271, (2014)

⋄ The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures

D. Rosales, H.T. Ngo, P. Valvin, K. Lekhal, B. Damilano, P. De Mierry, B. Gil, T. Bretagnon
Superlattice Microst, 76, 9-15, (2014)

⋄ Low loss GaN waveguides for visible light on Si Substrates

M. Gromovyi, F. Semond, J.Y. Duboz, G. Feuillet, M.P. De Micheli
J. Europ. Opt. Soc. Rap. Public., 9, 14050, (2014)

⋄ On the Correlation Between Kink Effect and Effective Mobility in InAlN/GaN HEMTs

P. Altuntas, N. Defrance, M. Lesecq, A. Agboton, R. Ouhachi, E. Okada, C. Gaquiere, J. De Jaeger, E. Frayssinet, Y. Cordier
Proc. of the 9th European Microwave Integrated Circuit Conference, , 88-91, (2014)

⋄ Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices

O. Arenas, É. Al Alam, A. Thevenot, Y. Cordier, A. Jaouad, V. Aimez, H. Maher, R. Arès and F. Boone
IEE JEDS, 2, 145-148, (2014)

⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment

M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski
J. Cryst. Growth, 157, 404, (2014)

⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire
J. Cryst. Growth, 404, 177-183, (2014)

⋄ Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
Mat. Sci. For., 806, 81-87, (2014)

⋄ Selective area growth of GaN nanostructures: A key to produce high-quality (11-20) a-plane pseudo-substrates

S. Albert, A. Bengoechea-Encabo, J. Zúñiga-Pérez, P. de Mierry, P. Val, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett., 105, 091902, (2014)

⋄ Magnetic properties of Gd doped GaN

S. Shvarkov, A. Ludwig, A. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H.W. Becker, D. Rogalla, and D. Reuter
Phys. Stat. Sol. B, 251, 1673-1684, (2014)

⋄ Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates

N. Gogneau, A. Ben Gouider Trabelsi, M. Silly, M. Ridene, M. Portail, A. Michon, M. Oueslati, R. Belkhou, F. Sirotti, A. Ouerghi
Nanotechnology, Science and Applications, 85, 7, (2014)

⋄ Electrothermally driven high frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J.F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou and S. Gauthier
J. Appl. Phys., 054304, 116, (2014)

⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29, 084001, (2014)

⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond
Appl. Phys. Lett., 104, 241113, (2014)

⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones

M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho
J. Appl. Phys., 116, 034308, (2014)

⋄ Magnetoresistance of disordered graphene: From low to high temperatures

B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
Phys. Rev. B, 90, 035423, (2014)

⋄ Valence-band orbital character of CdO: A synchrotron-radiation photoelectron spectroscopy and density functional theory study

J.J. Mudd, T.L. Lee, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, D.J. Payne, R.G. Egdell, and C.F. McConville
Phys. Rev. B, 89, 165305, (2014)

⋄ Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells

M. Fukuda, V.R. Whiteside, J.C. Keay, Matthew B. Johnson, M. Al Khalfioui, M. Leroux, K. Hossain, T.D. Golding, I.R. Sellers
IEEE PVSC, , 0669-0673, (2014)

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films

Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398, 23, (2014)

⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
J. Appl. Phys., 115, 153504, (2014)

⋄ Rotated domain network in graphene on cubic-SiC(001)

A.N. Chaika, O.V. Molodtsova, A.A. Zakharov, D. Marchenko, J. Sánchez-Barriga, A. Varykhalov, S.V. Babenkov, M. Portail, M. Zielinski, B.E. Murphy, S.A. Krasnikov, O. Lübben, I.V. Shvets and V.Y. Aristov
Nanotechnology, 25, 135605, (2014)

⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter

B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies
Proc. SPIE, 1G, 8986, (2014)

⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties

S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano
Semicond. Sci. Tech., 29, 035016, (2014)

⋄ Quantitative determination of compositional profiles using HAADF image simulations

R. El Bouayadi, M. Korytov, P.A. van Aken, P. Vennéguès, and M. Benaissa
Phys. Stat. Sol. C, 11, 284, (2014)

⋄ Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition

T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Souliere, G.Ferro, H.B. Weber, M. Krieger
Mat. Sci. For., 778-780, 261, (2014)

⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau
J. Cryst. Growth, 388, 35, (2014)

⋄ Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B.C. Camargo, Y. Kopelevich, J. Camassel,
Phys. Rev. B, 89, 085422, (2014)

⋄ Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO

J.J. Mudd, T.L. Lee, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, D. Hesp, J.M. Kahk, D.J. Payne, R.G. Egdell, and C.F. McConville
Phys. Rev. B, 89, 035203, (2014)

⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986, 89860Z, (2014)

⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104, 071912, (2014)

⋄ GaN/AlGaN superlattices for p contacts in LEDs

J.Y. Duboz
Semicond. Sci. Tech., 29, 035017, (2014)

⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron
Phys. Stat. Sol. A, 211, 1655-1659, (2014)

⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films

F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404, 146-151, (2014)

⋄ AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Theron, M. Faucher
Semicond. Sci. Tech., 29, 115018, (2014)

⋄ Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder

W. Desrat, M. Chmielowska, S. Chenot, Y. Cordier, and B. Jouault
Eur. Phys. J. Appl. Phys., 68, 20102, (2014)

⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers

Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger
Phys. Stat. Sol. C, 3-4, 498-501, (2014)

⋄ Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature

A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knap, Y. Cordier, S. Chenot, M. Chmielowska, P. Shiktorov, E. Starikov, V. Gruzinskis
Lithuanian Journal of Physics, 54, 58-62, (2014)

⋄ Selective area growth and charcaterization of GaN nanocolumns, with and without an InGaN insertion, on semipolar (11-22) GaN templates

A. Bengoechea-Encabo, S. Albert, J. Zúñiga-Pérez, P. de Mierry, A. Trampert, F. Barbagini, M.A. Sanchez-Garcia and E. Calleja
Appl. Phys. Lett., 103, 241905, (2013)

⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates

J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter
Appl. Phys. Lett., 103, 262104, (2013)

⋄ Imaging of photonic modes in an AlN-based photonic crystal probed by an ultra-violet internal light source

C. Brimont, T. Guillet, S. Rousset, D. Néel, X. Checoury, S. David, P. Boucaud, D. Sam-Giao, B. Gayral, M. J. Rashid, and F. Semond
Optics Letters, 38, 5059, (2013)

⋄ Chapter 11: Nitride-based electron devices for high-power/high-frequency applications

Y. Cordier, T. Fujishima, B. Lu, E. Matioli, and T. Palacios
III Nitride Semiconductors and their Modern Devices, 1, 366, (2013)

⋄ Strain evolution in GaN nanowires: from free-surface objects to coalesced templates

M. Hugues, P.A. Shields, F. Sacconi, M. Mexis, M. Auf der Maur, M. Cooke, M. Dineen, A. Di Carlo, D.W.E. Allsopp, and J. Zúñiga-Pérez
J. Appl. Phys., 114, 084307, (2013)

⋄ Optimization of Al0.29Ga0.71N//GaN High Electron Mobility Transistor heterostructures for high power/frequency performances

S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger
IEEE Transactions on Electron Devices, 60, 3105, (2013)

⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies
Appl. Phys. Express., 6, 092105, (2013)

⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior

D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
Phys. Rev. B, 88, 125437, (2013)

⋄ Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, E. Okada, M. Chmielowska, M.R. Ramdani and J.C. De Jaeger
Semicond. Sci. Tech., 28, 094003, (2013)

⋄ On the growth of Zn1–xMnxO thin films by plasma-assisted MBE

C. Deparis, C. Morhain, J. Zúñiga-Pérez, J.M. Chauveau, H. Kim-Chauveau, P. Vennéguès, M. Teisseire, B. Vinter
Phys. Stat. Sol. C, 10, 1322, (2013)

⋄ GaN doped with beryllium—An effective light converter for white light emitting diodes

H. Teisseyre, M. Bockowski, I. Grzegory, A. Kozanecki, B. Damilano, Y. Zhydachevskii, M. Kunzer, K. Holc, and U.T. Schwarz
Appl. Phys. Lett., 103, 011107, (2013)

⋄ Plasmon energy from strained GaN quantum wells

M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken
Appl. Phys. Lett., 103, 021901, (2013)

⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano.
Appl. Phys. Lett., 103, 032102, (2013)

⋄ Probing the nature of carrier localization in GaInNAs epilayers by optical methods

Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou
Appl. Phys. Lett., 103, 012104, (2013)

⋄ Magnetotransport studies of AlGaN/GaN heterostructures with 2 two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination

W. Desrat, S. Contreras, L. Konczewicz, B. Jouault, M. Chmielowska, S. Chenot, and Y. Cordier
J. Appl. Phys., 114, 023704, (2013)

⋄ Fabrication and characterization of a room-temperature ZnO polariton laser

F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, G. Malpuech, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, and J. Zúñiga-Pérez
Appl. Phys. Lett., 102, 191118, (2013)

⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113, 203501, (2013)

⋄ Temperature-dependent optical properties of epitaxial CdO thin films determined by spectroscopic ellipsometry and Raman scattering

S.G. Choi, L.M. Gedvilas, S.Y. Hwang, T.J. Kim, Y.D. Kim, J. Zúñiga-Pérez, and V. Munoz-Sanjosé
J. Appl. Phys., 113, 183515, (2013)

⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies
Jpn. J. Appl. Phys., 52, 08JG01, (2013)

⋄ Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

A. Pérez-Tomás, A. Fontserè, J. Llobet, M. Placidi, S. Rennesson, N. Baron, S. Chenot, J.C. Moreno, and Y. Cordier
J. Appl. Phys., 113, 174501, (2013)

⋄ From excitonic to photonic polariton condensate in a ZnO-based microcavity

F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. Lett., 110, 196406, (2013)

⋄ Terahertz transmission and effective gain measurement of two-dimensional electron gas

R. Sharma, T. Laurent, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Phys. Stat. Sol. A, 210, 1454, (2013)

⋄ Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, M. Rousseau, M. Chmielowska, M. Ramdani, and J.C. De Jaeger
IEEE Electron Devices Letters, 34, 490, (2013)

⋄ Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

H. Machhadani, M. Beeler, S. Sakr, E. Warde, Y. Kotsar, M. Tchernycheva, M.P. Chauvat, P. Ruterana, G. Nataf, P. De Mierry, E. Monroy, and F.H. Julien
J. Appl. Phys., 113, 143109, (2013)

⋄ High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy

R. Oliva, J. Ibañez, L. Artus, R. Cusco, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Appl. Phys., 113, 053514, (2013)

⋄ Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

N. Defrance, F. Lecourt, Y. Douvry, M. Lesecq, V. Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, J.C. De Jaeger
IEEE Transactions on Electron Devices, 60, 1054, (2013)

⋄ Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S.Chenot, J.C. Moreno, S. Rennesson and Y. Cordier
Appl. Phys. Lett., 102, 093503, (2013)

⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates

Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau
Appl. Phys. Express, 6, 042101, (2013)

⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier
Phys. Stat. Sol. A, 210, 480-483, (2013)

⋄ Room temperature generation of THz radiation in GaN quantum wells structures

A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knapb, Y. Cordier, S. Chenot, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis
Proc. SPIE, 8624, 862409, (2013)

⋄ Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès
Semicond. Sci. Tech., 28, 035006, (2013)

⋄ Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons

R. Messina, J.P. Hugonin, J.J. Greffet, F. Marquier, Y. De Wilde, A. Belarouci, L. Frechette, Y. Cordier and P. Ben-Abdallah
Phys. Rev. B, 87, 085421 , (2013)

⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes

J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies
J. Cryst. Growth, 363, 282, (2013)

⋄ Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

P. Sangaré, G. Ducournau, B.Grimbert, V. Brändli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
J. Phys. D: Appl. Phys., 113, 034305, (2013)

⋄ Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate

J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
Microelec. Engineering, 105, 65, (2013)

⋄ Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1-xN films using infrared spectroscopy

N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, and J. Massies
J. Appl. Phys., 114, 053505, (2013)

⋄ Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors

A. Perez-Tomas, A. Fontserè, S. Sanchez, M.R. Jennings, P.M. Gammon, and Y. Cordier
Appl. Phys. Lett., 102, 023511 , (2013)

⋄ On the interplay of point defects and Cd in non-polar ZnCdO films

A. Zubiaga, F. Reurings, F. Tuomisto, F. Plazaola, J.A. García, A.Yu. Kuznetsov, W. Egger, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Appl. Phys., 113, 023512, (2013)

⋄ Temperature dependence of the direct bandgap and transport properties of CdO

S.K. Vasheghani Farahani, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, C.F. McConville, and T.D. Veal
Appl. Phys. Lett., 102, 022102, (2013)

⋄ Advanced photonic and nanophotonic devices, III-nitride semiconductors and their modern devices, éditeur B. Gil, Oxford University Press

J.Y. Duboz
OUP, 10, 330-365, (2013)

⋄ X-ray diffraction and Raman spectroscopy study of strain in graphene films grown on 6H-SiC(0001) using propane-hydrogen-argon CVD

A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742, 117, (2013)

⋄ Role of magnetic polarons in ferromagnetic GdN

F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87, 035202, (2013)

⋄ Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons

J.H. Buss, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hagele
Appl. Phys. Lett., 103, 092401, (2013)

⋄ Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

E. Gür, G. Tabares, A. Arehart, J.M. Chauveau, A. Hierro, and S.A. Ringel
J. Appl. Phys., 112, 123709, (2012)

⋄ GaN-based nano rectifiers for THz detection

P. Sangaré, G. Ducournau, B. Grimbert, V. Brändli, M. Faucher, C. Gaquière
IEEE IRMMW, IRMMW - THz 2012, 1-2, (2012)

⋄ On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates

P. Vennéguès, J.M. Chauveau, Z. Bougrioua, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys., 112, 113518, (2012)

⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate

T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier
Phys. Stat. Sol. C, 10, 425, (2012)

⋄ Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1 )

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno
Mat. Sci. Eng. B, 52, 2547-2550, (2012)

⋄ Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
ECS Solid State Letters, 2, p4, (2012)

⋄ Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1)

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno
Microelectronics Reliability, 52, 2547, (2012)

⋄ Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

A. Pérez-Tomás, A. Fontserè, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier
Semicond. Sci. Tech., 27, 125010, (2012)

⋄ Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, M.R. Jennings, P.M. Gammon, C.A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria,
Nanotechnology, 23, 395204, (2012)

⋄ Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates

M. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, F. Semond
Solid State Electronics, 75, 86-92, (2012)

⋄ Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen

P. Muret, D. Tainoff, C. Morhain, and J.M. Chauveau
Appl. Phys. Lett., 101, 122104, (2012)

⋄ Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon

F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux
Superlattice Microst, 52, 541, (2012)

⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes

P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez
Optics Express, 20, 18707, (2012)

⋄ Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

A. Bengoechea-Encabo, S. Albert, M. A. Sanchez-Garcia, L.L. Lopez, S. Estradé, J.M. Rebled, E. Peiro, G. Nataf, P. de Mierry, J. Zúñiga-Pérez, and E. Calleja
J. Cryst. Growth, 353, 1-4, (2012)

⋄ Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson
J. Cryst. Growth, 353, 108, (2012)

⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots

J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont
AIP. Proceedings, 1566, 73, (2012)

⋄ Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria
Appl. Phys. Lett., 101, 093505, (2012)

⋄ From strong to weak coupling regime in a single GaN microwire up to room temperature

A. Trichet, F. Médard, J. Zúñiga-Pérez, B. Alloing and M. Richard
New J. Phys., 14, 073004, (2012)

⋄ Non-linear emission properties of ZnO microcavities

T. Guillet, C. Brimont, P. Valvin, B. Gil, T. Bretagnon, F. Medard, M. Mihailovic, J. Zúñiga-Pérez, F. Semond, S. Bouchoule
Phys. Stat. Sol. C, 9, 1225, (2012)

⋄ Searching for THz Gunn oscillations in GaN planar nanodiodes

A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangare, M. Faucher, B. Grimbert, V. Brändli, G. Ducournau, and C. Gaquière
J. Appl. Phys., 111, 113705, (2012)

⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)

A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720, 625, (2012)

⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720, 621, (2012)

⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349, 27, (2012)

⋄ High quality factor AlN nanocavities embedded in a photonic crystal waveguide

D. Sam-Giao, D. Néel, S. Sergent, B. Gayral, M.J. Rashid, F. Semond, J.Y. Duboz, M. Mexis, T. Guillet, C. Brimont, S. David, X. Checoury and P. Boucaud
Appl. Phys. Lett., 100, 191104, (2012)

⋄ LO-phonon-assisted polariton lasing in a ZnO-based microcavity

L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zúñiga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont and T. Guillet
Phys. Rev. B, 85, 121201, (2012)

⋄ Fabrication and properties of etched GaN nanorods

P. Shields, M. Hugues, J. Zúñiga-Pérez, M. Cooke, M. Dineen, W. Wang, F. Causa, and D. Allsopp
Phys. Stat. Sol. C, 9, 631, (2012)

⋄ A graphene electron lens

L. Gerhard, E. Moyen, T. Balashov, I. Ozerov, M. Portail, H. Sahaf, L. Masson, W. Wulfhekel, M. Hanbücken
Appl. Phys. Lett., 100, 153106, (2012)

⋄ Optical investigations of nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells

L. Béaur, T. Bretagnon, B. Gil, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire and J.M. Chauveau
Phys. Stat. Sol. C, 9, 1320, (2012)

⋄ Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation

M. Korytov, J.A. Budagosky, J. Brault, T. Huault, M. Benaissa, T. Neisius, J.L. Rouvière, and P. Vennégués
J. Appl. Phys., 111, 084309, (2012)

⋄ Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier
J. Appl. Phys., 111, 053507, (2012)

⋄ A new approach for AFM cantilever elaboration with 3C-SiC

S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier
Materials Letters , 77, 54, (2012)

⋄ Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

H.P.D. Schenk, A. Bavard, E. Frayssinet, X. Song, F. Cayrel, H. Ghouli, M. Lijadi, L. Naım, M. Kennard, Y. Cordier, D. Rondi and D. Alquier
APEX, 5, 025504, (2012)

⋄ Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

L.F. Lastras-Martinez, R.E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martinez, Y. Cordier, J.C. Moreno, E. Frayssinet, and F. Semond
J. Appl. Phys., 111, 023511, (2012)

⋄ Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure

B. Corbett, R. Charash, B. Damilano, H. Kim-Chauveau, N. Cordero, H. Shams, J.M. Lamy, M. Akhter, P.P. Maaskant, E. Frayssinet, P. de Mierry, and J.Y. Duboz
Phys. Stat. Sol. C, 9, 931, (2012)

⋄ Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents

A. Redondo-Cubero , A. Hierro , J.M. Chauveau , K. Lorenz , G. Tabares , N. Franco , E. Alves and E. Muñoz
CrystEngComm, 14, 1637, (2012)

⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck
J. Cryst. Growth, 338, 20, (2012)

⋄ Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition

S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier
Mat. Sci. For., 711, 61, (2012)

⋄ Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers

S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 711, 84, (2012)

⋄ Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si

X. Song, J. Biscarrat; A. E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Mat. Sci. For., 711, 154, (2012)

⋄ Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC

J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 711, 179, (2012)

⋄ Graphene/SiC interface control using propane-hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111)

A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711, 253, (2012)

⋄ Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar and semipolar orientations

P. Vennéguès
Semicond. Sci. Tech., 27, 024004, (2012)

⋄ Comparison of electrical behavior of GaN-based MOS structures obtained by different PECVD process

E. Al Alam, I. Cortés, T.Begou, A. Goullet, F. Morancho, A. Cazarré, P. Regreny, J. Brault, Y. Cordier, M.P. Besland, K. Isoird
Mat. Sci. For., 711, 228-232, (2012)

⋄ Fabrication and growth of GaN-based micro and nanostructures

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9, 412-427, (2012)

⋄ Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy

Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib
Phys. Stat. Sol. C, 9, 523-526, (2012)

⋄ Electromechanical Transconductance Properties of a GaN MEMS Resonator with fully integrated HEMT Transducers

M. Faucher, Y. Cordier, M. Werquin, L. Buchaillot, C. Gaquière and D. Théron
JMEMS, 21, 370-378, (2012)

⋄ High quality factor photonic resonators for nitride quantum dots

T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil, D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud
Phys. Stat. Sol. B, 249, 449, (2012)

⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies
Phys. Stat. Sol. A, 209, 465, (2012)

⋄ Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)

D.H. Rich, O. Moshe, B. Damilano, and J. Massies
Phys. Stat. Sol. C, 9, 1011, (2012)

⋄ Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

M. Mattalah, A. Soltani, J.C. Gerbedoen, A. Ahaitouf, N. Defrance, Y. Cordier, and J.C. De Jaeger
Phys. Stat. Sol. C, 9, 1083-1087, (2012)

⋄ Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy

Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau
Appl. Phys. Lett., 99, 261910 , (2011)

⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain

A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9, 175-178, (2011)

⋄ Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC

X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Nucl. Instr. and Method Phys. Research B, 269, 2020, (2011)

⋄ Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)

O. Moshe, D. H. Rich, B. Damilano, and J. Massies
J. Phys. Cond. Mat., 44, 505101, (2011)

⋄ Excitation-dependent polarized emission from GaN/AlN quantum dot ensembles under in-plane uniaxial stresses

D. H. Rich, O. Moshe, B. Damilano and J. Massies
AIP. Proceedings, 1399, 453, (2011)

⋄ Hybrid cavity polaritons in a ZnO-perovskite microcavity

G. Lanty, S. Zhang, J.S. Lauret, E. Deleporte, P. Audebert, S. Bouchoule, X. Lafosse, J. Zúñiga-Pérez, F. Semond, D. Lagarde, F. Médard, and J. Leymarie
Phys. Rev. B, 84, 195449, (2011)

⋄ Polariton lasing in a hybrid bulk ZnO microcavity

T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 99, 161104, (2011)

⋄ AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range

P.E. Malinowski, J.Y. Duboz, P. De Moor, J. John, K. Minoglou, P. Srivastava, F. Semond, E. Frayssinet, B. Giordanengo, A. BenMoussa, A. Gottwald, C. Laubis, R. Mertens, X. Van Hoof
Electron Dev. Lett., 32, 1561, (2011)

⋄ Micro and nano analysis of 0.2W.mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings, M. Porti, A. Bayer, M. Lanza and M. Nafría
Appl. Phys. Lett., 99, 213504, (2011)

⋄ Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells

L. Béaur, T. Bretagnon, B. Gil, A. Kavokin, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire, and J.M. Chauveau
Phys. Rev. B, 84, 165312, (2011)

⋄ Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings
Microelectronic Engineering, 88 (10), 3140, (2011)

⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range

A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110, 084318, (2011)

⋄ Thermal stability of ZnO/ZnCdO/ZnO double heterostructures grown by pulsed laser deposition

M. Lange, C.P. Dietrich, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann
J. Cryst. Growth, 328, 13, (2011)

⋄ Nanopendeo coalescence overgrowth of GaN on etched nanorod array

P. Shields, C. Liu, A. Šatka, A. Trampert, J. Zúñiga-Pérez, B. Alloing, D. Haško, F. Uherek, W. Wang, F. Causa, D. Allsopp
Phys. Stat. Sol. C, 8, 2334, (2011)

⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin
IEEE FCS, , , (2011)

⋄ Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells

G. Tabares, A. Hierro, B. Vinter, and J.M. Chauveau
Appl. Phys. Lett., 99, 071108, (2011)

⋄ Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V.V. Korotyeyev, and V.A. Kochelap
Appl. Phys. Lett., 99, 082101, (2011)

⋄ Thermal effects in AlGaN/GaN/Si high electron mobility transistors

I. Saidi, Y. Cordier, M. Chmielowska, H. Mejri and H. Maaref
Solid State Electronics, 61, 1-6, (2011)

⋄ High quality factor of AlN microdisks embedding GaN quantum dot

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Phys. Stat. Sol. C, 8, 2328, (2011)

⋄ RF Performance of AlGaN/GaN High Electron Mobility Transistors grown on Silicon (110)

D. Marti, C.R. Bolognesi, Y. Cordier, M. Chmielowska, M. Ramdani
Applied Physics Express, 4, 064105, (2011)

⋄ Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime

L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont and T. Guillet
Appl. Phys. Express, 4, 072001, (2011)

⋄ Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes

R. Charash, H. Kim-Chauveau, A. Vajpeyi, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, J.Y. Duboz, and B. Corbett
Phys. Stat. Sol. C, 8, 2378, (2011)

⋄ High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud
Optics Letters, 36, 2203-2205, (2011)

⋄ AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate

D. Néel, S. Sergent, M. Mexis, D. Sam-Giao, T. Guillet, C. Brimont, T. Bretagnon, F. Semond, B. Gayral, S. David, X. Checoury, P. Boucaud
Appl. Phys. Lett., 98, 261106, (2011)

⋄ GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growth

S. Vézian, B. Alloing and J. Zúñiga-Pérez
J. Cryst. Growth, 323, 326, (2011)

⋄ Laser emission with excitonic gain in a ZnO planar microcavity

T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 98, 211105 , (2011)

⋄ Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy

D. Taïnoff, M. Al-Khalfioui, C. Deparis, B. Vinter, M. Teisseire, C. Morhain, and J.M. Chauveau
Appl. Phys. Lett., 98, 131915, (2011)

⋄ Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells

J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Morhain, C. Deparis, and B. Vinter
J. Appl. Phys., 109, 102420, (2011)

⋄ Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

P.E. Malinowski, J.Y. Duboz, P. De Moor, K. Minoglou, J. John, S. Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, and C. Van Hoof
Appl. Phys. Lett., 98, 141104, (2011)

⋄ Electron mobility in CdO films

S.K. Vasheghani Farahani, T.D. Veal, P.D.C. King, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C.F. McConville
J. Appl. Phys., 109, 073712, (2011)

⋄ Effect of surface preparation and interfacial layer on the quality of GaN/SiO2 interfaces

E. Al Alam, I. Cortés, M.P. Besland, A. Goullet, L. Lajaunie, P. Regreny, Y. Cordier, J. Brault, A. Cazarré, K. Isoird, G. Sarrabayrouse, F. Morancho
J. Appl. Phys., 109, 084511, (2011)

⋄ Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy

E. Frayssinet, Y. Cordier, H.P.D. Schenk, and A. Bavard
Phys. Stat. Sol. C, 8, 1479-1482, (2011)

⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot
IEEE MEMS, , , (2011)

⋄ Growth of GaN based structures on focused ion beam patterned templates

Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.Y. Lo, Y.Y. Hu, A. Ludwig, A.D. Wieck
Phys. Stat. Sol. C, 8, 1516–1519 , (2011)

⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties

S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies
J. Appl. Phys., 109, 053514, (2011)

⋄ Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates

L. Béaur, T. Bretagnon, C. Brimont, T. Guillet, B. Gil, D. Tainoff, M. Teisseire and J.M. Chauveau
Appl. Phys. Lett., 98, 101913, (2011)

⋄ Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

M. Katsikini, F. Pinakidoua, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, and T.D. Moustakas
Mat. Sci. Eng. B, 176, 723, (2011)

⋄ The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates

H. Kim-Chauveau, P. de Mierry, J.M. Chauveau and J.Y. Duboz
J. Cryst. Growth, 316, 30, (2011)

⋄ Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)

O. Moshe, D.H. Rich, B. Damilano, and J. Massies
Appl. Phys. Lett., 98, 061903, (2011)

⋄ Determination of defect content and defect profile in semiconductor heterostructures

A. Zubiaga, J. A. Garcia, F. Plazaola, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Phys.: Conf. Ser., 265, 012004, (2011)

⋄ MgZnO/ZnO quantum well nanowire heterostructures with large confinement energies

M. Lange, C. P. Dietrich, J. Zúñiga-Pérez, H. von Wenckstern, M. Lorenz, and M. Grundmann
J. Vac. Sci. Technol. A, 29, 03A104, (2011)

⋄ Ohmic Contact Resistance dependence on Temperature for GaN devices

A. Pérez-Tomas, A. Fontsere, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon and M.R. Jennings
Mat. Sci. For., 679-680, 816-819, (2011)

⋄ Electrical characterization of nitrogen implanted 3C-SiC by SSRM and c-TLM measurments

X. Song, A.E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 679-680, 193, (2011)

⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez
Appl. Phys. Lett., 98, 011914, (2011)

⋄ Measurement of Pulsed Current–Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, and B. Beaumont
Acta Physica Polonica A, 119, 196-198, (2011)

⋄ Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers

A. ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla
Phys. Rev. B, 83, 205429, (2011)

⋄ Growth of thick continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard
J. Cryst. Growth, 314, 85-91, (2011)

⋄ Analytical model of stress relaxation in 3C-SiC layers on silicon

M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier
Mat. Sci. For., 679-680, 79, (2011)

⋄ Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime

J.H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A.D. Wieck, and D. Hägele
Phys. Rev. B, 84, 153202, (2011)

⋄ Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov and V. Gruzinskis
Acta Physica Polonica A, 119, 107-110, (2011)

⋄ Epitaxial growth of GdN on silicon substrate using an AlN buffer layer

F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, L. Hirsch
J. Cryst. Growth, 312, 3583, (2010)

⋄ Study of the epitaxial relationships between III-nitrides and M-plane sapphire

P. Vennéguès, T. Zhu, D. Martin, and N. Grandjean
J. Appl. Phys., 108, 113521, (2010)

⋄ X-ray detectors based on GaN Schottky diodes

J.Y. Duboz, E. Frayssinet, S. Chenot, J.L. Reverchon, M. Idir
Appl. Phys. Lett., 97, 163504, (2010)

⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett., 97, 171909, (2010)

⋄ Epitaxial graphene on 3C-SiC(111) pseudosubstrate: structural and electronic properties

A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, F. Sirotti
Phys. Rev. B, 82, 125445, (2010)

⋄ Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111)

A. Ouerghi, R. Belkhou, M. Marangolo, M.G. Silly, S. El Moussaoui, M. Eddrief, L. Travers, M. Portail, F. Sirotti
Appl. Phys. Lett., 97, 161905, (2010)

⋄ Blue-green and white color tuning of monolithic light emitting diodes

B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
J. Appl. Phys., 108, 073115, (2010)

⋄ Complex dielectric function and refractive index spectra of epitaxial CdO thin film grown on r-plane sapphire from 0.74 to 6.45 eV

S.G. Choi, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, A.G. Norman, C.L. Perkins, and D.H. Levi
J. Vac. Sci. Technol. B, 28, 1120, (2010)

⋄ Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

D.H. Rich, O. Moshe, S. Birner , M. Povolotskyi , B. Damilano , J. Massies
J. Appl. Phys., 108, 083510, (2010)

⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond
J. Cryst. Growth, 312 - n° 19, 2683-2688 , (2010)

⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth

N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry
Nanoscale Res. Lett., 5, 1878, (2010)

⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry
J. Cryst. Growth, 312, 2625, (2010)

⋄ Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots

J.H. Kim, B.J. Kwon, Y.H. Cho, T. Huault, M. Leroux, J. Brault
Appl. Phys. Lett., 97, 061905, (2010)

⋄ External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes

M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, and J. Massies
J. Appl. Phys., 108, 033104, (2010)

⋄ Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities

F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J.C. Moreno, F. Semond, M. Leroux, and S. Bouchoule
J. Appl. Phys., 108, 043508, (2010)

⋄ Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates

J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Deparis, C. Morhain, and B. Vinter
Appl. Phys. Lett., 97, 081903, (2010)

⋄ Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses

O. Moshe, D.H. Rich, B. Damilano and J. Massies
J. Vac. Sci.Technol.B, 28, C5E25, (2010)

⋄ Current Spreading Efficiency and Fermi Level Pinning in GaInNAs–GaAs Quantum-Well Laser Diodes

M.M. Bajo, A. Hierro, J.M. Ulloa, J. Miguel-Sánchez, Á. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz, and J. Massies
IEEE J Quantum Electron, 46, 1058, (2010)

⋄ Electrical behaviour of lateral Al/n-GaN/Al structures

Z.J. Horvath, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pecza
App. Surf. Science, 256, 5614, (2010)

⋄ Photoemission of Si 1s --> 2pz transition in GaAs/AlGaAs quantum well for zero-dimensional states infrared detection

T. Antoni, M. Carras, X. Marcadet, B. Vinter, and V. Berger
Appl. Phys. Lett., 97, 042102-3, (2010)

⋄ Analysis of AlGaN/GaN Epi-material on Resistive Si(111) Substrate for MMIC Applications in Millimeter Wave Range

F. Lecourt, Y. Douvry, N. Defrance, V. Hoel, Y. Cordier, J.C. De Jaeger
Proc. of the 5th European Microwave Integrated Circuits Conference, 2010, 33-36, (2010)

⋄ Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf
Appl. Phys. Lett., 96, 231918, (2010)

⋄ Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

I. Gorczyca, A. Kaminska, G. Staszczak, R. Czernecki, S.P. Łepkowski, T. Suski, H.P.D. Schenk, M. Glauser, R. Butté, J.F. Carlin, E. Feltin, N. Grandjean, N.E. Christensen, and A. Svane
Phys. Rev. B, 81, 235206 , (2010)

⋄ In-clustering effects in InAIN and InGaN revealed by high pressure studies

I. Gorczyca, T. Suski, A. Kaminska, G. Staszczak, H.P.D. Schenk, N.E. Christensen, A. Svane
Phys. Stat. Sol. A, 207, 1369, (2010)

⋄ Surface band-gap narrowing in quantized electron accumulation layers

P.D.C. King, T.D. Veal, C.F. McConville, J. Zúñiga-Pérez, V. Munõz-Sanjosé, M. Hopkinson, E.D.L. Rienks, M. Fuglsang Jensen, and Ph. Hofmann
Phys. Rev. Lett., 104, 256803, (2010)

⋄ AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, J.C. De Jaeger, C. Gaquière, Y. Cordier, and F. Semond
IEEE Trans. Electron Devices, 57, 1497-1503, (2010)

⋄ Whispering gallery modes in zinc oxide micro- and nanowires

C. Czekalla, T. Nobis, A. Rahm, B. Cao, J. Zúñiga-Pérez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann
Phys. Stat. Sol. B, 247, 1282, (2010)

⋄ Luminescence properties of ZnO/Zn1-xCdxO/ZnO double heterostructures

M. Lange, C.P. Dietrich, C. Czekalla, J. Zippel, G. Benndorf, M. Lorenz, J. Zúñiga-Pérez, and M. Grundmann
J. Appl. Phys., 107, 093530, (2010)

⋄ Two-dimensional confined photonic wire resonators: strong light-metter coupling

R. Schmidt-Grund, H. Hilmer, A. Hinkel, C. Sturm, B. Rheinlander, V. Gottschalch, M. Lange, J. Zúñiga-Pérez, and M. Grundmann
Phys. Stat. Sol. B, 247, 1351, (2010)

⋄ Epitaxial graphene on Cubic SiC(111)/Si(111) substrate

A. Ouerghi, A. Kahouli , D. Lucot , M. Portail , L. Travers , J. Gierack , J. Penuelas , P. Jegou , A. Shukla , T. Chassagne , M. Zielinski
Appl. Phys. Lett., 96, 191910, (2010)

⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C, 1-3, 200983426, (2010)

⋄ Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation

A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne, M. Portail, M. Zielinski, E. Collard, D. Alquier
Mat. Sci. Eng. B, 171, 120, (2010)

⋄ Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN

J. Pedros, F. Calle, R. Cuerdo, J. Grajal, Z. Bougrioua
Appl. Phys. Lett., 96, 123505, (2010)

⋄ Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructure of Nonpolar AlN Films Grown on (1120) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy

P. Vennéguès, S. Founta, H. Mariette, and B. Daudin
Jpn. J. Appl. Phys., 49, 040201, (2010)

⋄ Temperature dependence of electron spin relaxation in bulk GaN

J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Phys. Rev. B, 81, 155216, (2010)

⋄ Evidence of electrical activity of extended defects in 3C-SiC grown on Si

X. Song, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Appl. Phys. Lett., 96, 142104, (2010)

⋄ Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers

M. Carras, G. Maisons. B. Simozrag, M. Garcia, O. Parillaud, J. Massies, X. Marcadet
Appl. Phys. Lett., 96, 161105, (2010)

⋄ Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results

F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, J. Leymarie, M. Mihailovic, D.D. Solnyshkov, G. Malpuech, E. Frayssinet, S. Sergent, F. Semond, M. Leroux, S. Bouchoule
J. Phys.: Conf. Ser., 210, 012026, (2010)

⋄ GaN quantum dots in (Al,Ga)N-based Microdisks

S. Sergent, J.C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, B. Gayral, D. Néel, S. David, P. Boucaud, M. Leroux, F. Semond
J. Phys.: Conf. Ser., 210, 012005, (2010)

⋄ Raman scattering of cadmium oxide epilayers grown by metal-organic vapor phase epitaxy

R. Cusco, J. Ibanez, N. Domenech-Amador, L. Artus, J. Zúñiga-Pérez, and V. Munoz-Sanjose
J. Appl. Phys., 107, 063519, (2010)

⋄ Tuning the lateral density of ZnO nanowires arrays and its applications as physical templates for radial nanowire heterostructures

B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, H. Hilmer, J. Lenzner, N. Boukos, A. Travlos, M. Lorenz, and M. Grundmann
J. Mater. Chem., 20, 3848, (2010)

⋄ Monolithic integration of AlGaN/GaN HFET with MOS on silicon < 111 > substrates

P.N. Chyurlia, F. Semond , T. Lester , J.A. Bardwell et al
Electron. Lett., 46, 240, (2010)

⋄ Recent advances in surface preparation of silicon carbide and other wide band gap materials

M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A.E. Bazin, J.F. Michaud, M. Portail
Mat. Sci. For., 645-648, 753-758, (2010)

⋄ Self-organized growth of ZnO-based nano- and microstructures

M. Lorenz, A. Rahm, B. Cao, J. Zúñiga-Pérez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann
Phys. Stat. Sol. B, 247, 1265, (2010)

⋄ Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon

S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J.F. Michaud, M. Portail, and D. Alquier
AIP Conf Proc, 1292, 15, (2010)

⋄ Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding

R. Charash, H. Kim-Chauveau, J.M. Lamy, M. Akther, P.P. Maaskant, E. Frayssinet, P. de Mierry, D. Dräger, J.Y. Duboz, A. Hangleiter and B. Corbett
Appl. Phys. Lett., 98, 201112, (2010)

⋄ Deposited thin SiO2 for gate oxide on n-type and p-type GaN

M. Placidi, A. Constant, A. Fontserè, E. Pausas, I. Cortes, Y. Cordier, N. Mestres, R. Pérez, M.Zabala, J. Millán, P. Godignon and A. Pérez-Tomás
Journal of the Electrochemical Society, 157, H1008-H1013 , (2010)

⋄ 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

A. Pérez-Tomas, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan and P. Godignon
Mat. Sci. For., 645-648, 1207-1210, (2010)

⋄ Comparison of GaN-Based MOS Structures with Different Interfacial Layer Treatments

E. Al Alam, I. Cortes, M. P. Besland, P. Regreny, A. Goullet, F. Morancho, A. Cazzare, Y. Cordier, K. Isoird, F. Olivié
Proc. of the 27th conference on microelectronics, 2010, 459, (2010)

⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses

M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier
AIP Conf Proc, 1292, 115, (2010)

⋄ High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature

A.E. Bazin, J.F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, and D. Alquier
AIP Conf Proc, 1292, 51, (2010)

⋄ Micromachining of thin 3C-SiC films for mechanical properties investigation

J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
Mater. Res. Soc. Symp. Proc. , 1246, B09-04, (2010)

⋄ SiC on SOI resonators: a route for electrically driven MEMS in harsh environment

M. Placidi, A. Pérez-Tomás, P. Godignon, N. Mestres, G. Abadal, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648, 845-848, (2010)

⋄ Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers

A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648, 585-588, (2010)

⋄ Thermally induced surface reorganization of 3C-SiC(111) epilayers grown on silicon substrates

M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski
Mat. Sci. For., 645-648, 155-158, (2010)

⋄ Anisotropic electron spin relaxation in bulk GaN

J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Appl. Phys. Lett., 95, 192107, (2009)

⋄ Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance

Y. Cordier, N. Baron, M. Azize, S. Chenot
Revue de l Electricite et de l Electronique, 10, 73-77, (2009)

⋄ Backside illuminated GaN on Si Schottky photodiode for UV radiation detection

P.E. Malinowski, J. John, J.Y. Duboz, A. Lorenz, J.G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J.F. Hochedez and B. Giordaneng
Electron Dev. Lett., 30, 1308, (2009)

⋄ Interfacial properties of AlN and oxidized AlN on Si

M. Placidi, A. Perez-Tomas, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi and J. Millán.
surface science, 604, 63, (2009)

⋄ Phase separation in GaN/AlGaN quantum dots

M. Benaissa, L. Gu, M. Korytov, T. Huault, P.A. van Aken, J. Brault, and P. Vennéguès
Appl. Phys. Lett., 95, 141901, (2009)

⋄ Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms

F. Reveret, P. Disseix, J. Leymarie, F. Semond F et al.
Solid State Com., 150, 122, (2009)

⋄ In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

P. Vennéguès, T. Zhu, Z. Bougrioua, D. Martin, J. Zúñiga-Pérez, and N. Grandjean
Jpn. J. Appl. Phys., 48, 090211, (2009)

⋄ Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, and S. Bouchoule
Appl. Phys. Lett., 95, 121102, (2009)

⋄ Single-ion anisotropy in Mn-doped diluted magnetic semiconductors

A. Savoyant, A. Stepanov, R. Kuzian, C. Deparis, C. Morhain, and K. Grasza
Phys. Rev. B, 80, 115203, (2009)

⋄ First demonstration and performance of AlGaN based focal plane array for deep-UV imaging

J.L. Reverchon, S. Bansropun, J.A. Robo, J.P. Truffer, E. Costard, E. Frayssinet, J. Brault, F. Semond, J.Y. Duboz, M. Idir
SPIE procedings, 7474, 74741G, (2009)

⋄ Al and Ti/Al contacts on n-GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua
Vacuum, 84, 228, (2009)

⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski
Appl. Phys. Lett., 95, 081903, (2009)

⋄ Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

M. Willander, O. Nur, Q.X. Zhao, L.L. Yang, M. Lorenz, B.Q. Cao, J. Zúñiga-Pérez, C. Czekalla, G. Zimmermann, M. Grundmann, A. Bakin, A. Behrends, M. Al-Suleiman, A. El-Shaer, A. Che Mofor, B. Postels, A. Waag, N. Boukos, A. Travlos, H.S. Kwack, J. Gu
Nanotechnology, 20, 332001, (2009)

⋄ Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers

M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies
Phys. Stat. Sol. C, 6, 1424, (2009)

⋄ Perturbing GaN/AlN quantum dots with uniaxial stressors

Ofer Moshe, Daniel H. Rich, Benjamin Damilano, Jean Massies
Phys. Stat. Sol. C, 6, 1432, (2009)

⋄ Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy

P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf
Appl. Phys. Lett., 94, 191903, (2009)

⋄ Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, A.V. Naumov, A.E. Belyaev
J. Appl. Phys., 105, 073703, (2009)

⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates.

P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf
Jpn. J. Appl. Phys., 48, 031002, (2009)

⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
Mat. Sci. For., 600-603, 1277-1280, (2009)

⋄ Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M.P. Besland
Phys. Stat. Sol. C, 6 - S2, 1016-1019, (2009)

⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
Phys. Stat. Sol. C, 6 - S2, 1020-1023, (2009)

⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies
Phys. Stat. Sol. C, 6 - S2, 715-718, (2009)

⋄ Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary
Materials Science in Semiconductor Processing, 12, 16-20, (2009)

⋄ Anomalous photoresponse of GaN X-ray Schottky detectors

J.Y. Duboz, B. Beaumont, J.L. Reverchon and A.D. Wieck
J. Appl. Phys., 105, 114512, (2009)

⋄ Analysis of the C-V characteristic SiO2/GaN MOS capacitors

I. Cortes, E. Al-Alam, M.P. Besland, P. Regreny, F. Morancho, A. Cazarré, Y. Cordier, A. Goullet and K. Isoird
Proc. 7th Spanish Conference on Electron Devices, 7, 254-257, (2009)

⋄ (Zn, Mg)O/ZnO based heterostructures grown by molecular beam epitaxy on sapphire: polar vs non-polar

J.M. Chauveau, C. Morhain, M. Teisseire, M. Laügt, C. Deparis, J. Zúñiga-Pérez, and B. Vinter
Microelectronics Journal, 40, 512, (2009)

⋄ Infrared detectors based on InGaAsN/GaAs intersubband transitions

J.Y. Duboz, M. Hugues, B. Damilano, A. Nedelcu, P. Bois, N. Kheirodin, F.H. Julien
Appl. Phys. Lett., 94, 022103, (2009)

⋄ Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption

F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet
Phys. Rev. B, 79, 125302, (2009)

⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?

A. Le Louarn, S. Vézian, F. Semond and J. Massies
J. Cryst. Growth, 311, 3278, (2009)

⋄ Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces

O. Copie, V. Garcia, C. Bödefeld, C. Carrétéro, M. Bibes, G. Herranz, E. Jacquet, J.L. Maurice, B. Vinter, S. Fusil, K. Bouzehouane, H. Jaffrès, and A. Barthélémy
Phys. Rev. Lett., 102, 216804-4, (2009)

⋄ GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures

S. Sergent, J.C. Moreno, E. Frayssinet, S. Chenot, M. Leroux, and F. Semond
Applied Physics Express, 2, 051003, (2009)

⋄ Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities

F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux
Photonics and Nanostructures, 7, 26, (2009)

⋄ Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

P.D.C. King, T.D. Veal, A. Schleife, J. Zúñiga-Pérez, B. Martel, P.H. Jefferson, F. Fuchs, V. Munoz-Sanjosé, F. Bechstedt, and C.F. McConville
Phys. Rev. B, 79, 205205, (2009)

⋄ Optical characterization of zinc oxide microlasers and microwire core-shell heterostructures

C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, J. Zúñiga-Pérez, M. Lorenz, and M. Grundmann
J. Vac. Sci. Technol. B, 27, 1780, (2009)

⋄ Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

P.D.C. King, T.D. Veal, P.H. Jefferson, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and C.F. McConville
Phys. Rev. B, 79, 035203, (2009)

⋄ UV Imaging Based on AlGaN Arrays

J.Y. Duboz, J. Brault, J.P. Truffer, J.A. Robot, K. Robin, J.L. Reverchon
Phys. Stat. Sol. (c), S2, S611, (2009)

⋄ GaN transistor characteristics at elevated temperatures

A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, A. Constant, P. Godignon, and J. Millán
J. Appl. Phys., 106, 074519, (2009)

⋄ Catalytic unzipping of carbon nanotubes to few-layer graphene sheets under microwaves irradiation

I. Janowska , O. Ersen , T. Jacob, P. Vennéguès, D. Bégin, M.J. Ledoux, C. Pham-Huu
Applied Catalysis A:General, 371, 22-30, (2009)

⋄ Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet

J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz
EAS Publications Series, , , (2009)

⋄ Expected progress based on aluminium gallium nitride focal plane arrays for near and deep ultraviolet

J.L. Reverchon, K. Robin, S. Bansropun, Y. Gourdel, J.A. Robo, J.P. Truffer, E. Costard, J. Brault, E. Frayssinet and J.Y. Duboz
EDP, 37, 207, (2009)

⋄ Recent ROB developments on wide bandgap based UV sensors

B. Giordanengo, A. Ben Moussa, J.F. Hochedez, A. Soltani, P. de Moor, K. Minouglou, P. Malinowski, J.Y. Duboz, Y.M. Chong, Y.S. Zhou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin, and H.X. Jiang
EDP_EAS, 37, 199, (2009)

⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies
J. Cryst. Growth, 311, 2002-2005, (2009)

⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells

F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B, 79, 035328, (2009)

⋄ Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source

F. Natali, Y. Cordier, C. Chaix, P. Bouchaib
J. Cryst. Growth, 311, 2029-2032, (2009)

⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies
J. Appl. Phys., 105, 033701, (2009)

⋄ Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration

P. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J.C. Moreno, and N.G. Tarr
Phys. Stat. Sol. A, 206, 371-374, (2009)

⋄ Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

M. Faucher, B. Grimbert, Y. Cordier, N. Baron, A. Wilk, H. Lahrèche , P. Bove, M. François, P. Tilmant, T. Gehin, C. Legrand, M. Werquin, L. Buchaillot, C. Gaquière, and D. Théron
Appl. Phys. Lett., 94, 233506, (2009)

⋄ High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

L. Bouguen, L. Konczewicz, S. Contreras, B. Jouault, J. Camassel, Y. Cordier
Mat. Sci. Eng. B, 165-1-2, 1-4, (2009)

⋄ Homogeneous core/shell ZnO/ZnMgO quantum well heterostructures on vertical ZnO nanowires

B. Q. Cao, J. Zúñiga-Pérez, N. Boukos, C. Czekalla, H. Hilmer, J. Lenzner, A. Travlos, M. Lorenz, and M. Grundmann
Nanotechnology, 20, 305701, (2009)

⋄ Optical investigations of bulk and multi-quantum well nitride-based microcavities

F. Reveret, F. Medard, P. Disseix, F. Semond et al.
Optical Materials, 31, 505, (2009)

⋄ Noise spectroscopy of AlGaN/GaN HEMT structures with long channels

S.A. Vitusevich, M.V. Petrychuk, A.M. Kurakin, S.V. Danylyuk, D. Mayer, Z. Bougrioua, A.V. Naumov, A.E. Belyaev, N. Klein
J. Stat. Mech., 1, P01046, (2009)

⋄ Polarized photoluminescence from nonpolar (11-20) (Ga,In)N multi-quantum-weells

T. Gühne, Z. Bougrioua, M. Nemoz, R. Cmielowski, T. Bretagnon, B. Gil, M. Leroux
Proc. 29th Int. Conf. Physics of Seminconductors ICPS, 1199, 191, (2009)

⋄ Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition

M. Marinova, T. Robert, S. Juillaguet, I. Tsiaoussis, N. Frangis, E. Polychroniadis, J. Camassel, T. Chassagne
Phys. Stat. Sol. A, 206, 1924-1930, (2009)

⋄ Epitaxial aluminium nitride on patterned silicon

J. Moreno, E. Frayssinet, F. Semond et al.
Materials Science in Semicond. Processing, 12, 31, (2009)

⋄ Substrates for III−Nitride−based Electroluminescent Diodes

P. de Mierry
LEDs for Lighting Applications, Patrick Mottier (CEA, LETI), Editors ISTE Ltd (UK), 29-73, (2009)

⋄ Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells

T. Laurent, P. Nouvel, J. Torres, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, J.P. Faurie, B. Beaumont, E. Starikov, P. Shiktorov, V. Gruzinskis
Journal of Physics : Conference Series, 193, 012094, (2009)

⋄ 8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?

T. Robert, S. Juillaguet, M. Marinova, T. Chassagne, I. Tsiaoussis, N. Frangis, E.K. Polychroniadis and J. Camassel
Mat. Sci. For., 615-617, 339-342, (2009)

⋄ Anomalous Hall Effect in Gd-Implanted Wurtzite AlxGa1-N-x/GaN High Electron Mobility Transistor Structures

F.Y Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck
Materials Research Society Symposium Proceedings, 1111, 61-69, (2009)

⋄ Optical and excitonic properties of ZnO films

M. Mihailovic, A. L. Henneghien, S. Faure, P. Disseix, J. Leymarie, A. Vasson, D. A. Buell, F. Semond, C. Morhain, and J. Zúñiga-Pérez
Optical Matérials, 31, 532, (2009)

⋄ Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

M. Korytov, T. Huault, M. Benaissa, T. Neisius, J. Brault, P. Vennéguès
Appl. Phys. Lett., 94, 143105, (2009)

⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies
Phys. Stat. Sol. (b), 246, 845-845, (2009)

⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range

J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys., 105, 033519, (2009)

⋄ Towards green lasing: ingredients for a green laser diode based on GaInN

A.D. Dräger, H. Jönen, H. Bremers, U. Rossow, P. Demolon, H.P.D. Schenk, J.Y. Duboz, B. Corbett, and A. Hangleiter
Phys. Stat. Sol. (c), C6 (S2), 792, (2009)

⋄ Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy

M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry
Mat. Sci. Eng. B, 165, 42, (2009)

⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz
Phys. Stat. Sol. (c), S2, 897, (2009)

⋄ Advances in liquid phase conversion of (100) and (111) oriented Si wafers into self standing 3C-SiC

M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel
Mat. Sci. For., 615-617, 49, (2009)

⋄ Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy

M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier
Mat. Sci. Eng. B, 165, 9, (2009)

⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates

M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz
J. Appl. Phys., 105, 083505, (2009)

⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon

M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier
Mat. Sci. For., 615-617, 169, (2009)

⋄ Development of thick GaN-on-silicon layers for rectifier applications

H.P.D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, E. Béraudo, S. Chenot, Y. Cordier, and J.Y. Duboz
EWMOVPE-XIII, D.14, 343-346, (2009)

⋄ Comparison of GaN and ZnO epitaxial films for scintillator applications

H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, A. Dadgar, and A. Krost
J. Cryst. Growth, 311, 3984, (2009)

⋄ Anisotropic chemical etching of semipolar {10-1-1}/{10-1+1} ZnO crystallographic planes: polarity versus dangling bonds

E. Palacios-Lidon, B. Pérez-Garcia, P. Vennéguès, J. Colchero, V. Muñoz-Sanjosé, and J. Zúñiga-Pérez
Nanotechnology, 20, 065701, (2009)

⋄ Highly sensitive strained AlN on Si(111) resonators

M. Placidi, J.C. Moreno, P. Godignon, N. Mestres, E. Frayssinet, F. Semond, C. Serre
Sensors and Actuators A: Physical, 150, 64-68, (2008)

⋄ Mechanisms of ammonia-MBE growth of GaN on SiC for transport devices

H. Tang, S. Rolfe, F. Semond, J.A. Bardwell, J.M. Baribeau
J. Cryst. Growth, 311, 2091-2095, (2008)

⋄ Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with Silicon microelectronics

S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang
J. Cryst. Growth, 311, 2087-2090, (2008)

⋄ Performance of Unstuck Γ Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10GHz

J.C. Gerbedoen, A.Soltani, N. Defrance, M. Rousseau, C. Gaquiere, J.C. De Jaeger, S. Joblot, Y. Cordier
European Microwave Integrated Circuits Conference, 2008, 330-333, (2008)

⋄ Mosaicity and stress effects on luminescence properties of GaN Mosaicity and stress effects on luminescence properties of GaN

A. Toure, A. Bchetnia, T.A. Lafford, Z.Benzarti, I. Halidou, Z. Bougrioua, B. El Jani
Phys. Stat. Sol. A, 208, 2042, (2008)

⋄ Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

M. Montes, A. Hierro, J.M. Ulloa, A. Guzmán, B. Damilano, M. Hugues, M. Al Khalfioui, J.Y. Duboz and J. Massies
JPhys D:Appl Phys, 41, 155102, (2008)

⋄ Magnesium diffusion profile in GaN grown by MOVPE

Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani
J. Cryst. Growth, 310, 3274, (2008)

⋄ Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka, F. Réveret, R.W. Martin, P.R. Edwards, A. Vasson, J. Leymarie, I. Sellers, J.Y. Duboz, M. Leroux, and F. Semond
Appl. Phys. Lett., 92, 241105, (2008)

⋄ Polarized emission from GaN/AlN quantum dots: single-dot spectroscopy and symmetry-based theory

R. Bardoux, T. Guillet, B. Gil, P. Levebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77, 235315, (2008)

⋄ Influence of the mirrors in the strong coupling regime in planar GaN microcavities

F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies
Phys. Rev. B, 77, 195303, (2008)

⋄ Mechanism of mobility increase of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma irradiation

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N; Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev
J. Appl. Phys., 103, 083707, (2008)

⋄ Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots

M. Richter, D. Reuter, J.Y. Duboz, A.D. Wieck
PhysicaE, 40, 1891, (2008)

⋄ Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua
Vacuum, 82, 794, (2008)

⋄ Residual strain in nonpolar a-plane Zn(1−x)MgxO (0< x <0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells

J.M. Chauveau, J. Vives, J. Zúñiga-Pérez, M. Laügt, M. Teisseire, C. Deparis, C. Morhain, and B. Vinter
Appl. Phys. Lett., 93, 231911, (2008)

⋄ In-plane anisotropy characteristics of GaN epilayers grown on A-face sapphire substrates

HJ. Kim-Chauveau, P. De Mierry, H. Cabane, and D. Gindhart
J. Appl. Phys., 104, 113516, (2008)

⋄ P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si

A.E. Bazin, J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, J.F. Lecoq, E. Collard, D. Alquier
Mater. Res. Soc. Symp. Proc., 1068, 1068-C07-09, (2008)

⋄ Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy

L.F.J. Piper, L. Colakerol, P.D.C. King, A. Schleife, J. Zúñiga-Pérez, P.A. Glans, T. Learmonth, A. Federov, T.D. Veal, F. Fuchs, V. Muñoz-Sanjosé, F. Bechstedt, C.F. McConville and K.E. Smith
Phys. Rev. B, 78, 165127, (2008)

⋄ Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN

O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, Y. André
Phys. Rev. B, 77, 045206, (2008)

⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1, 121101, (2008)

⋄ Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot wall reactor

M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre
J. Cryst. Growth, 310, 3174, (2008)

⋄ Investigation of AlGaN/AlN/GaN Heterostructures for Magnetic Sensor Application from liquid helium temperature to 300°C

L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot, N. Baron
Appl. Phys. Lett., 92, 043504, (2008)

⋄ Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy

J.M. Chauveau, M. Laügt, P. Vennéguès, M. Teisseire, B. Lo, C. Deparis, C. Morhain, and B. Vinter
Semicond. Sci. Tech., 23 (3), 035005, (2008)

⋄ Bandgap and effective mass of epitaxial cadmium oxide

P.H. Jefferson, S.A. Hatfield, T.D. Veal, P.D.C. King, C.F. McConville, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Appl. Phys. Lett., 92, 022101, (2008)

⋄ Composition analysis of semiconductor quantum wells by energy filtered convergent beam electron diffraction

D. Jacob, J.M. Zuo, A. Lefebvre, Y. Cordier
Ultramicroscopy, 108, 358–366, (2008)

⋄ Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots

M. Hugues, B. Damilano, M. Al Khalfioui, J.Y. Duboz, J. Massies, M. Richter and A.D. Wieck
Semicond. Sci. Tech., 23, 035020, (2008)

⋄ High doping level in Mg-doped GaN layers grown at low temperature

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean
J. Appl. Phys., 103, 013110, (2008)

⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies
Appl. Phys. Lett., 92, 051911, (2008)

⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities

F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli
Appl. Phys. Lett., 92, 042119, (2008)

⋄ High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, and E. Muñoz
Phys. Stat. Sol. (c), 5 - n°6, 1971-1973, (2008)

⋄ Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities

K. Bejtka, P.R. Edwards, R.W. Martin, F. Reveret, A. Vasson, J. Leymarie, I.R. Sellers, M. Leroux, and F. Semond
Semicond. Sci. Tech., 8, 045008, (2008)

⋄ Structural and optical properties of Zn(1-x)CdxO solid solutions grown on ZnO substrates by using MOCVD

A. Lusson, N. Hanèche, V. Sallet, P. Galtier, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, S. Agouram, J.A. Bastos Segura, E. Leroy
J. Kor. Phys. Soc., 53, 158, (2008)

⋄ Band gap narrowing and radiative efficiency of silicon doped GaN

H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich, and D.H. Rich
J. Appl. Phys., 103, 103502, (2008)

⋄ Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode

T. Gühne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf
Electron. Lett., 44, 231, (2008)

⋄ Electronic structure of single-crystal rocksalt CdO studied by soft x-ray spectroscopies and ab initio calculations

L.F.J. Piper, A. DeMasi, K.E. Smith, A. Schleife, F. Fuchs, F. Bechstedt, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Phys. Rev. B, 77, 125204, (2008)

⋄ Thickness and substrate effects on AlN thin film growth at room temperature

B. Abdallah, C. Duquenne, M.P. Besland, E. Gautron, P.Y. Jouan, P.Y. Tessier, J. Brault, Y. Cordier, and M.A. Djouadi
Eur. Phys. J. Appl. Phys., 43(3), 309-313, (2008)

⋄ Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

P. Vennéguès, J.M. Chauveau, M. Korytov, C. deparis, J. Zúñiga-Pérez, and C. Morhain
J. Appl. Phys., 103, 083525, (2008)

⋄ AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
J. Cryst. Growth, 310, 4417–4423, (2008)

⋄ Interface structure and anisotropic strain relaxation of non polar wurtzite (11-20) and (10-10) orientations: ZnO epilayers grown on sapphire

J.M. Chauveau, P. Vennéguès, M. Laügt, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Appl. Phys., 104, 073535, (2008)

⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond
IEEE Electron Device Letters, 29, 1187-1189, (2008)

⋄ Growth and Characterization of Non-Polar (Zn,Mg)O/ZnO Quantum Wells and Multiple Quantum Wells

J.M. Chauveau, B. Vinter, M. Laugt, M. Teisseire, P. Vennéguès, C. Deparis, J. Zúñiga-Pérez and C. Morhain
J. Kor. Phys. Soc., 53(5), 2934, (2008)

⋄ Magnetotransport in Gd-implanted wurtzite GaN/AlxGa1−xN high electron mobility transistor structures

F.Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A.D. Wieck
Appl. Phys. Lett., 92, 112111, (2008)

⋄ Molecular Beam Epitaxy of AlN Layers on Si (111)

J.C. Moreno, E. Frayssinet, F. Semond et al.
MRS symposium proceeding, 1068, 141-145, (2008)

⋄ Dry etching of N-face GaN using two high-density plasma etch techniques

F. Rizzi, K. Bejtka, F. Semond et al.
Phys. Stat. Sol. C, 4, 200-203, (2008)

⋄ Strong coupling in bulk GaN microcavities grown on silicon

F. Reveret, I.R. Sellers, P. Disseix, F. Semond et al.
Phys. Stat. Sol. C, 4, 108-111, (2008)

⋄ Temperature dependence of the polariton relaxation bottleneck in a GaN microcavity

F. Stokker-Cheregi, A. Vinattieri, M. Colocci, F. Semond et al.
Phys. Stat. Sol. C, 5, 2257, (2008)

⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
MRS Symposium Proceedings, 1068, C04-05, (2008)

⋄ Strong light-matter coupling in GaN-based microcavities grown on silicon substrates

F. Semond, I.R. Sellers, N. Ollier et al.
MRS proceedings, 1068, 95-100, (2008)

⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068, 51-56, (2008)

⋄ Les substrats pour les diodes électroluminescentes de type III−nitrures

P. de Mierry
Les diodes electroluminescentes pour l eclairage, P. Mottier, Hermès, ISBN 978-2-7462-2097-3, 49−90, (2008)

⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001)

S. Pezzagna, S. Vézian, J. Brault, and J. Massies
Appl. Phys. Lett., 92, 23111, (2008)

⋄ Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates

Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne
Phys. Stat. Sol. (c), 5, No. 6, 1983–1985, (2008)

⋄ Comparison of GaInN laser structures grown on different substrates

A.D. Dräger, D. Fuhrmann, C. Netzel, U. Rossow, H.P.D. Schenk, and A. Hangleiter
Phys. Stat. Sol. (c), 5, 2277, (2008)

⋄ Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy

W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, and A.D. Wieck
Appl. Phys. Lett., 92, 193111, (2008)

⋄ Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by Epitaxial Lateral Overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux
Phys. Rev. B, 77, 075308, (2008)

⋄ Gallium Nitride: A Nanoscale Study Using Electron Microscopy and Associated techniques

M. Benaissa and P. Vennéguès
Sains Malaysiana, 37(3), 255-259, (2008)

⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter
Appl. Phys. Lett., 93, 081116, (2008)

⋄ Characterization of non-polar ZnO layers with positron annihilation spectroscopy

A. Zubiaga, F. Tuomisto, J. Zúñiga-Pérez and V. Muñoz-Sanjosé
Acta Physica Polonica A, 114, 1457, (2008)

⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates

M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier
Mater. Res. Soc. Symp. Proc., 1069, 1069-D07-09, (2008)

⋄ Luminescence upconversion in GaAs quantum wells

S. Eshlaghi, W. Worthoff, A.D. Wieck, and D. Suter
Phys. Rev. B, 77, 245317, (2008)

⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett., 90, 101117, (2008)

⋄ GaN for x-ray detection

J.Y. Duboz, M. Laügt, H.P.D. Schenk, B. Beaumont, J.L. Reverchon, A.D. Wieck, and T. Zimmerling
Appl. Phys. Lett., 92, 263501, (2008)

⋄ Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

T.D. Veal, P.D.C. King, S.A. Hatfield, L.R. Bailey, C.F. McConville, B. Martel, J.C. Moreno, E. Frayssinet, F. Semond, and J. Zúñiga-Pérez
Appl. Phys. Lett., 93, 202108, (2008)

⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors

R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson
International Workshop on Nitride Semiconductors, , , (2008)

⋄ Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates

M. Zielinski, M. Portail, T. Chassagne, Y. Cordier
Mat. Sci. For., 600-603, 207-210, (2008)

⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates

M. Portail, M. Nemoz, M. Zielinski, T. Chassagne
Mat. Sci. For., 600-603, 231, (2008)

⋄ AlGaN photodetectors for applications in the extreme UV range

P. Malinowski, J. John, A. Lorrenz, P.A. Alonso, M. Germain, J. Derluyn, K. Cheng, G. Borghs, R. Mertens, J.Y. Duboz, F. Semond, U. Kroth, M. Richter, J.F. Hochedez, A. Ben Moussa
Proc. SPIE, , , (2008)

⋄ Symmetry of wurtzite nanostructures with the c-axis in the layer plane

P. Tronc and P. Vennéguès
Phys. Rev. B, 77, 075336, (2008)

⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart
J. Cryst. Growth, 310, 948, (2008)

⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding

S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli
J. Appl. Phys., 103, 123112, (2008)

⋄ Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki
J. Appl. Phys., 102, 103701 , (2007)

⋄ AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging

J.L. Reverchon , J.A. Robot, J.P. Truffer, J.P. Caumes, I. Mourad, J. Brault and J.Y. Duboz
SPIE procedings, 6744, 674417, (2007)

⋄ Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy

P. Muret, J. Pernot, M. Azize, Z. Bougrioua
J. Appl. Phys., 102, 053701, (2007)

⋄ AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100 nm SiN recessed gate technology for low cost device fabrication

S. Boulay, S. Touati, A. Sar, V. Hoel, C. Gaquiere, J.C. De Jacger, S. Joblot, Y. Cordier, F. Semond, J. Massies
European Microwave Integrated Circuits Conference, 2007, 96-99, (2007)

⋄ Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells

T. Guillet, T. Bretagnon, T. Taliercio, P. Lefebvre, B. Gil, C. Morhain, X.D. Tang
Superlattice Microst, 41, 352, (2007)

⋄ Barrier composition dependence of the internal electric field in ZnO/Zn1-xMgxO quantum wells

T. Bretagnon, P. Lefebvre, T. Guillet, T. Taliercio, B. Gil, C. Morhain
Appl. Phys. Lett., 90, 201912, (2007)

⋄ Magnetic properties of single crystalline Zn1-xCoxO thin films

P. Sati, S. Schafer, C. Morhain, C. Deparis, A. Stepanov
Superlattice Microst, 42, 191, (2007)

⋄ Magnetotransport characterization of AlGaN/GaN interfaces

R. Tauk, A. Tiberj, P. Lorenzini, Z. Bougrioua, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Phys. Stat. Sol. A, 204, 586, (2007)

⋄ Electric-field screening effects in the micro-photoluminescence spectra of as-grown stacking faults in 4H-SiC

S. Juillaguet, T. Guillet, R. Bardoux, J. Camassel and T. Chassagne
Mat. Sci. For., 556-557, 351-354, (2007)

⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE

Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
J. Cryst. Growth, 301-302, 434-436, (2007)

⋄ In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy

Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler
J. Cryst. Growth, 301-302, 71-74, (2007)

⋄ Polariton emission in GaN microcavities

M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies
Superlattice Microst, 41, 284, (2007)

⋄ InAs/AlAsSb based quantum cascade lasers

X. Marcadet, C. Renard, M. Carras, M. Garcia, J. Massies
Appl. Phys. Lett., 91, 161104, (2007)

⋄ Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots

M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies
Phys. Rev. B, 76 (7), 075335-6, (2007)

⋄ Deuterium Out-diffusion Kinetics in Magnesium-doped GaN

J. Chevallier, F. Jomard, N.H. Nickel, P. de Mierry, S. Chenot, Y. Cordier, M.A. di Forte-Poisson, and S. Delage
Mat. Res. Soc. Symp. Proc., 994, F03-22, (2007)

⋄ Exciton dissociation and hole escape in the thermal photoluminescence quenching of (Ga,In)(N,As) quantum wells M.

M. Hugues, B. Damilano, J.Y. Duboz, J. Massies
Phys. Rev. B, 75, 115337, (2007)

⋄ Screening the built-in electric field in 4H silicon carbide stacking faults

S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Appl. Phys. Lett., 90, 111902, (2007)

⋄ Cathodoluminescence investigation of stacking faults extension in 4H-SiC

S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Phys. Stat. Sol. A, 204, 2222-2228, (2007)

⋄ Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. BenMoussa, S. Touati, V. Hoël, J.C. De Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M.A. Djouadi, C. Dua
Diamond and Related Materials, 16, 262–266, (2007)

⋄ Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Z. Bougrioua, P. Gibart, E. Calleja, A. Trampert, J. Ristic, M. Utrera, G. Nataf
J. Cryst. Growth, 309, 113-120, (2007)

⋄ AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

S. Boulay, S. Touati, A.A. Sar, V. Hoel, C. Gaquière, J.C. De Jaeger, S. Joblot, Y. Cordier, F. Semond, and J. Massies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 54, No. 11, 2843-2848, (2007)

⋄ Micro-photoluminescence of isolated hexagonal GaN/AlN quantum dots: Role of the electron-hole dipole

R. Bardoux, T. Guillet, P. Lefebvre, F. Semond et al.
Physics of semiconductors, B893, 941-942, (2007)

⋄ Growth and characterization of A-plane ZnO and ZnCoO based heterostructures

J.M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, M. Tesseire-Doninelli, and G. Neu
Applied Physics A: Materials Science and Processing, 88 (1), 65-9, (2007)

⋄ Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy

J.M. Chauveau, D.A. Buell, M. Laugt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, and C. Morhain
J. Cryst. Growth, 301-302, 366-9, (2007)

⋄ Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

A. Zubiaga, J.A. García, F. Plazaola, F. Tuomisto, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
Phys. Rev. B, 75, 205305, (2007)

⋄ Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau
Phys. Stat. Sol. (c), 4, n°7, 2670-2673, (2007)

⋄ Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond et al.
Superlattice Microst, 41, 414-418, (2007)

⋄ Low Specific Contact Resistance to 3C-SiC grown on (100) Si substrates

A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard; D. Alquier
Mat. Sci. For., 556-557, 721, (2007)

⋄ Annealing effects on GaInNAs/GaAs quantum wells analyzed using thermally detected optical absorption and ten band k.p calculations

T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies and J.Y. Duboz
J. Appl. Phys., 101, 073510, (2007)

⋄ Intersubband transitions in InGaAsN/AlGaAs quantum wells with a high confinement energy

J.Y. Duboz
Phys. Stat. Sol. (c), 7, 2391, (2007)

⋄ Energy levels and intersubband transitions in InGaAsN/AlGaAs quantum wells

J.Y. Duboz
Phys. Rev. B, 75, 045327, (2007)

⋄ Blue-shift mechanisms in annealed GaInNAs/GaAs quantum wells

M. Hugues, B. Damilano, J.M. Chauveau, J.Y. Duboz and J. Massies
Phys. Rev. B, 75, 045313, (2007)

⋄ AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV)

J. John, P. Malinowski, P. Aparicio, J.Y. Duboz, F. Semond et al.
Optical sensing technology and applications, 6585, 33-40, (2007)

⋄ From evidence of strong light-matter coupling to polariton emission in GaN microcavities

I.R Sellers, F. Semond, M. Zamfirescu et al.
Phys. Stat. Sol. B, 244, 1882-1886, (2007)

⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots

M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck
Jpn. J. Appl. Phys, 46, 12-16, (2007)

⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11), 113304-1-4, (2007)

⋄ Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)

G. Sarusi, O. Moshe, S. Khatsevich, D.H. Rich, and B. Damilano
Phys. Rev. B, 75, 075306, (2007)

⋄ (In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, X.N. Kang, G.Y. Zhang, E. Gu, M.D. Dawson, I.M. Watson, and R.W. Martin
Appl. Phys. Lett., 90, 111112, (2007)

⋄ Structural and morphological characterization of ZnO films grown on GaAs substrates by MOCVD

S. Agouram, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
Appl. Phys. A, 88, 83, (2007)

⋄ Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source

S. Vézian, A. Le Louarn and J. Massies
J. Cryst. Growth, 303, 419, (2007)

⋄ Structural and electrical characterization of n-type GaN/AlxGa1-xN superlattices grown by metalorganic vapour phase epitaxy

H.P.D. Schenk, P. Demolon, S. Ndiaye, M. Laügt, T. Gühne, Z. Bougrioua, P. de Mierry, J.Y. Duboz, A.D. Dräger, C. Netzel, and A. Hangleiter
Proc. Int. Workshop Nitride Based Nanostruct., , 127, (2007)

⋄ Microstructural characterization of semipolar GaN templates and epitaxial-lateral-overgrown films deposited on M-plane sapphire by metalorganic-vapor-phase-epitaxy

P. Vennéguès, Z. Bougrioua and T. Guehne
Jpn. J. Appl. Phys, 46, n° 7A, 4089, (2007)

⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties

M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch
Phys. Stat. Sol. (c), 4, No. 1, 137-140, (2007)

⋄ Nanoscale determination of surface orientation and electrostatic properties of ZnO thin films

J. Zúñiga-Pérez, E. Palacios-Lidón, V. Muñoz-Sanjosé, and J. Colchero
Appl. Phys. A, 88, 77, (2007)

⋄ Antiferromagnetic Interactions in Single Crystalline Zn1-xCoxO Thin Films

P. Sati, C. Deparis, C. Morhain, S. Schafer, and A. Stepanov
Phys. Rev. Lett., 98 (13), 137204-4, (2007)

⋄ Energetically deep defect centers in vapor-phase grown zinc oxide

T. Frank, G. Pensl, R. Tena-Zaera, J. Zúñiga-Pérez, C. Martínez-Tomás,V. Muñoz-Sanjosé, T. Ohshima, H. Itoh, D. Hofmann, D. Pfisterer, J. Sann and B. Meyer
Appl. Phys. A, 88, 141, (2007)

⋄ Ordered growth of tilted ZnO nanowires: morphological, structural and optical charcaterization

J. Zúñiga-Pérez, A. Rahm, C. Czekalla, J. Lenzner, M. Lorenz, M. Grundmann
Nanotechnology, 18, 195303, (2007)

⋄ Electron Scattering Spectroscopy by High Magnetic Field in Mid-Infrared Quantum Cascade Lasers

A. Leuliet, A. Wade, A. Vasanelli, G. Fedorov, D. Smirnov, M. Giovannini, J. Faist, G. Bastard, B. Vinter, and C. Sirtori
ICPS, AIP Conference Proceedings, 893, 497-498, (2007)

⋄ Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux
Phys. Stat. Sol. (a), 204, n°1, 282-289, (2007)

⋄ Formation and rupture of Schottky nanocontacts on ZnO nanocolumns

B. Pérez-García, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, J. Colchero, and E. Palacios-Lidón
Nano Letters, 7, 1505, (2007)

⋄ X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau and V. Muñoz -Sanjosé
Appl. Phys. A, 88, 61, (2007)

⋄ Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

T. Gühne, M. Albrecht, Z. Bougrioua, P. Vennéguès, and M. Leroux
J. Appl. Phys., 101, 113101, (2007)

⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime

F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies
Superlattice Microst, 41, 376, (2007)

⋄ Fabrication of monocrystalline 3C-SiC resonators for MHz frequency applications

M. Placidi, P. Godignon, N. Mestres, G. Abadal, G. Ferro, A. Leycuras, T. Chassagne
Sensors and Actuators B, , , (2007)

⋄ Monolithic white light emitting diodes with a broad emission spectrum

A. Dussaigne, J. Brault, B. Damilano, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1, 57-60, (2007)

⋄ Trends in nitrogen doping for 3C-SiC films on silicon

M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras and J. Camassel
Mat. Sci. For., 556-557, 207, (2007)

⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots

R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1, 183-186, (2007)

⋄ Anisotropic morphology of nonpolar a-plane quantum dots and quantum wells

S. Founta, C. Bougerol, H. Mariette, B. Daudin and P. Vennéguès
J. Appl. Phys., 102, 074304, (2007)

⋄ Nanogoniometry with Scanning Force Microscopy: A Model Study of CdTe Thin Films

E. Palacios-Lidón, L. Guanter, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and J. Colchero
Small, 3, 474, (2007)

⋄ All-optical characterisation of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE grown GaN

T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, A. Kakanakova, E. Janzen, D. Gogova, B. Monemar, M. Heuken
J. Cryst. Growth, 300, 223-227, (2007)

⋄ ZnO micro-pillar resonators with coaxial Bragg reflectors

R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, and M. Grundmann
AIP Conference Proceedings, , , (2007)

⋄ X-ray photoemission studies of the electronic structure of single-crystalline CdO(100)

L.F.J. Piper, P.H. Jefferson, T.D. Veal, C.F.C. McConville, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
Superlattice Microst, 42, 197, (2007)

⋄ Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras; J. Camassel
Phys. Stat. Sol. (a), 204, 981, (2007)

⋄ AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies
J. Cryst. Growth, 309, 1–7, (2007)

⋄ Photoelectric properties of highly excited GaN-Fe epilayers grown by modulation- and continuous-doping techniques

Z. Bougrioua, M. Azize, B. Beaumont, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarasiunas
J. Cryst. Growth, 300, 228-232, (2007)

⋄ Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides

Y.H. Cho, H. S. Kwack, B.J. Kwon, J. Barjon, J. Brault, B. Daudin, Le Si Dang
Appl. Phys. Lett., 89, 251914, (2006)

⋄ 1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate

M. Richter, M. Hugues, B. Damilano, J. Massies, J.Y. Duboz, D. Reuter and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3848, (2006)

⋄ Optimization of InAs/(Ga,In)As quantum dots in view of efficient emission at 1.5µm

M. Hugues, M. Richter, B. Damilano, J.M. Chauveau, J.Y. Duboz, J. Massies and A.D. Wieck
Phys. Stat. Sol. (c), 3, 3979, (2006)

⋄ Growth of Ag thin films on ZnO(000-1) investigated by AES and STM

E. Duriau, S. Agouram, C. Morhain, T. Seldrum, R. Sporken, J. Dumont
App. Surf. Science, 253, 549, (2006)

⋄ Photoluminescence of single GaN/AlN quantum dots on Si(111): spectral diffusion effects

R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, F. Semond
Phys. Rev. B, 74, 195319, (2006)

⋄ Spin-exchange interaction in ZnO-based quantum wells

B. Gil, P. Lefebvre, T. Bretagnon, T. Guillet, J.A. Sans, T. Taliercio, and C. Morhain
Phys. Rev. B, 74, 153302, (2006)

⋄ Magneto-optical spectroscopy of (Zn,Co)O epilayers

W. Pacuski, D. Ferrand, J. Cibert, C. Deparis, P. Kossacki, C. Morhain
Phys. Stat. Sol. B, 243, 863, (2006)

⋄ InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications

M. Richter, B. Damilano, J. Massies, and J.Y. Duboz
Mater. Res. Soc. Symp. Proc., 891, 0891-EE03-29.1, (2006)

⋄ Field-effect-modulated SAW devices on AlGaN/GaN heterostructures

J. Pedros, R. Cuerdo, F. Calle, J. Grajal, J.L. Martinez-Chacon, Z. Bougrioua
IEEE Ultrasonics Symposium, , , (2006)

⋄ Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co

P. Sati, R. Hayn, R. Kuzian, S. Regnier, S. Schafer, A. Stepanov, C. Morhain, C. Deparis, M. Laügt, M. Goiran, Z. Golacki
Phys. Rev. Lett., 96, 017203-4, (2006)

⋄ Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer

K. Bejtka, R.W. Martin, I.M. Watson, S. Ndiaye, M. Leroux
Appl. Phys. Lett., 89, 191912, (2006)

⋄ Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau
Superlattice Microst, (40), 359-362, (2006)

⋄ Room temperature Strong coupling in low finesse GaN microcavities

I.R. Sellers, F. Semond, M. Leroux, et al.
MRS symposium, 892, 485-490, (2006)

⋄ Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates

F. Tinjod, P. de Mierry, D. Lancefield, S. Chenot, E. Virey, J.L. Stone-Sundberg, M.R. Kokta, D. Pauwels
Phys. Stat. Sol. (c), (6), 2199-202, (2006)

⋄ Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications

E. Feltin, J.F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, and N. Grandjean
Appl. Phys. Lett., 88, 051108, (2006)

⋄ Role of elastic scattering mechanisms in GaInAs/AlInAs quantum cascade lasers

A. Vasanelli, A. Leuliet, C. Sirtori, A. Wade, G. Fedorov, D. Smirnov, G. Bastard, B. Vinter, M. Giovannini, and J. Faist
Appl. Phys. Lett., 89 (17), 172120-3, (2006)

⋄ Optimum indium composition for (Ga,In)’(N,As) /GaAs quantum wells emitting beyond 1.5µm

M. Hugues, B. Damilano, J.Y. Duboz, and J. Massies
Appl. Phys. Lett., 88, 91111, (2006)

⋄ Long wavelength emitting InAs/Ga0.85In0.15Nas Quantum Dots on GaAs substrate

M. Richter, B. Damilano, J.Y. Duboz, J. Massies, A. Wieck
Appl. Phys. Lett., 88, 231902, (2006)

⋄ investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

M. Benaissa, P. Vennéguès, O. Tottereau, L. Nguyen and F. Semond
Appl. Phys. Lett., 89, 231903, (2006)

⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix
Phys. Stat. Sol. (c), 3, N°6, 2325-2328, (2006)

⋄ Generation-recombination reduction in InAsSb photodiodes

M. Carras, C. Renard, X. Marcadet, J. L. Reverchon, B. Vinter, and V. Berger
Semicond. Sci. Tech., 21 (12), 1720-3, (2006)

⋄ Sensitivity of synchrotron radiation x-ray diffraction to the chemical ordering in epitaxial perovskite multilayers

M. Nemoz, E. Dooryhee, J.L. Hodeau, C. Dubourdieu, H. Roussel, P. Bayle-Guillemaud
J. Appl. Phys., 100, 124110, (2006)

⋄ Solar blind AlGaN photodetectors with a very high spectral selectivity

J.Y. Duboz , N. Grandjean, A. Dussaigne, M. Mosca, J.L. Reverchon, P.G. Verly, R.H. Simpson
Eur. Phys. J. Appl. Phys., 33, 5, (2006)

⋄ Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

T. Bretagnon, P. Lefebvre, P. Valvin, B. Gil, C. Morhain, X.D. Tang
J. Cryst. Growth, 287, 12, (2006)

⋄ Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature

I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson
Phys. Stat. Sol. (b), 243(7), 1639, (2006)

⋄ Strong coupling of light with A and B excitons in GaN microcavities on silicon

I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson
Phys. Rev. B, 73, 033304, (2006)

⋄ HIGH TEMPERATURE PULSED MEASUREMENTS OF AlGaN/GaN HEMTs ON HIGH RESISTIVE Si(111) SUBSTRATE

M. Werquin, D. Ducatteau, N. Vellas, E. Delos, Y. Cordier, R. Aubry, and C. Gaquiere
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 48, No. 11, 2303-2305, (2006)

⋄ Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study

B. Boudjelida, I. Gee, J. Evans-Freeman, S.A. Clark, M. Azize, J.M. Bethoux, and P. de Mierry
Phys. Stat. Sol. C, 3, 1823, (2006)

⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie
Journal de Physique IV, 132, 365-368, (2006)

⋄ Effect of the s,p-d exchange interaction on the excitons in Zn1-xCoxO epilayers

W. Pacuski, D. Ferrand, J. Cibert, C. Deparis, J. A. Gaj, P. Kossacki, and C. Morhain
Phys. Rev. B, 73 (3), 035214-13, (2006)

⋄ Characterization of high-k Ta/sub 2/Si oxidized films on 4H-SiC and Si substrates as gate insulator

A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millan, N. Mestres, P. Vennéguès and J. Stoemenos
J. Electrochem. Soc., 152(4), G259-65, (2006)

⋄ Characterization of structural defects in GaN films grown on sapphire substrates

P. Vennéguès, F. Mathal, and Z. Bougrioua
Phys. Stat. Sol. (c), 3/6, 1658-1661, (2006)

⋄ Stress relaxation during the growth of 3C-SiC/Si thin films

M. Zielinski, A. Leycuras, S. Ndiaye, T. Chassagne
Appl. Phys. Lett., 89, 131906, (2006)

⋄ Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction

M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont, and P. Gibart
Phys. Stat. Sol. (b), 243, No. 7, 1545–1550, (2006)

⋄ Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

T. Malinauskas, K. Jarasiunas, S. Miasojedovas, S. Jursenas, B. Beaumont, P. Gibart
Appl. Phys. Lett., 88, 202109, (2006)

⋄ Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE

V.G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K.S. Zhuralev, P. Vennéguès
Phys. Stat. Sol. (c), 3, No.6, 1548, (2006)

⋄ Application of LTPL Investigation Methods to CVD-Grown SiC

J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud
Chem. Vap. Deposition, 12, 549–556, (2006)

⋄ Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)

G. Ferro, T. Chassagne, A. Leycuras, F. Cauwet, Y. Monteil
Chem. Vap. Deposition, 12, 483–488, (2006)

⋄ Epitaxial orientation of III-Nitrides grown on R-plane sapphire by metalorganic-vapor-phase-epitaxy

P. Vennéguès and Z. Bougrioua
Appl. Phys. Lett., 89, 111915, (2006)

⋄ Structural characterisation of Sb-based heterostructures by X-ray scattering methods

C. Renard, O. Durand, X. Marcadet, J. Massies, O. Parillaud
Applied Surface Science, 253, 112, (2006)

⋄ An AlGaN Based Linear Array for UV Solar Blind Imaging from 240 nm to 280 nm

G. Mazzeo, J.L. Reverchon, J.Y. Duboz, A. Dussaigne
IEEE Sensors Journal, 6(4), 957-63, (2006)

⋄ Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFTES Measured in Strong Inversion

A. Pérez-Tomas, M. Vellvehi, N. Mestres, J. Millan, P. Vennéguès and J. Stoemenos
Mat. Sci. For., 527-529, 1059, (2006)

⋄ On the determination of the structural parameters of GaxIn1-xAs/AlAsySb1-y superlattices by X-ray diffraction

C. Renard, X. Marcadet, J. Massies
J. Cryst. Growth, 297, 272, (2006)

⋄ Cylindric resonators with coaxial Bragg reflectors

R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, and M. Grundmann
Proc. SPIE, , , (2006)

⋄ Investigation of the optical properties of epitaxial-lateral-overgrown GaN on R- and M-sapphire

T. Gühne, Z. Bougrioua, M. Albrecht, P. Vennéguès, M. Leroux, M. Laügt, S. Ndiaye, M. Teisseire, L. Nguyen, and P. Gibart
Mater. Res. Soc. Symp. Proc., , , (2006)

⋄ Properties of (InGa)As/GaAs QW (1200 nm) facet-coated edge-emitting diode laser

T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovác, J. Kovác, Jr., R. Schmidt-Grund, B. Rheinländer, and D. Pudis
Laser Physics, , 441, (2006)

⋄ Optoelectronic properties of GaN epilayers in the region of yellow luminescence

C. Grazzi, H.P. Strunk, A. Castaldini, A. Cavallini, H.P.D. Schenk, and P. Gibart
J. Appl. Phys., 100, 073711, (2006)

⋄ Diodes électroluminescentes blanches pour l'éclairage

B. Damilano, J. Brault, A. Dussaigne, J. Massies
Images de la Physique, , 86, (2006)

⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature

I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa
Phys. Rev. B, 74, 193308, (2006)

⋄ Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire

T. Aggerstam, S. Lourdudoss, H.H. Radamson, M. Sjödin, P. Lorenzini, D.C. Look
Thin Solid Films, 515, 705–707, (2006)

⋄ AlGaN/GaN HEMTs on (001) silicon substrates

S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies
Electron. Lett., 42, 117-118, (2006)

⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies
Superlattice Microst, 40, 295-299, (2006)

⋄ Fast, high-efficiency, and homogeneous room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire

M. Lorenz, R. Johne, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann, H.P.D. Schenk, S.I. Borenstain, A. Schön, C. Bekeny, T. Voss, and J. Gutowski
Appl. Phys. Lett., 89, 243510, (2006)

⋄ Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells

C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis
Phys. Rev. B, 72 (24), 241305-4, (2005)

⋄ Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers from 1.29 to 1.52 µm

J.M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hughes, J.Y. Duboz, J. Massies
Appl. Phys. Lett., 87, 251109, (2005)

⋄ Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

Z. Bougrioua, M. Azize, A. Jimenez, A.F. Braña, P. Lorenzini, B. Beaumont, E. Muñoz, and P. Gibart
Phys. Stat. Sol. (c), 2, 7, 2424-2428, (2005)

⋄ Carrier profiles in Fe doped GaN layers grown by MOVPE

M. Azize, Z. Bougrioua, P. Girard, and P. Gibart
Phys. Stat. Sol. (c), 2, 5, 2153-2156, (2005)

⋄ Internal Photoemission in AlGaN solar blind detectors

J.Y. Duboz, N. Grandjean, F. Omnès, M. Mosca, J.L. Reverchon
Appl. Phys. Lett., 86, 063511, (2005)

⋄ Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers

B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, A. Hierro, J.M. Ulloa, and E. Calleja
Appl. Phys. Lett., 86, 071105, (2005)

⋄ Transmission electron microscopy of GaN layers grown by ELO and micro-ELO techniques

B. Pécz, Zs. Makkai, E. Frayssinet, B. Beaumont and P. Gibart
Phys. Stat. Sol. (c), 2, No. 4, 1310-1313, (2005)

⋄ Characterisation of differently grown GaN epilayers by time-resolved four-wave mixing technique

K. Jarašiunas, T. Malinauskas, R. Aleksiejunas, M. Sudžius, E. Frayssinet, B. Beaumont, J.P. Faurie and P. Gibart
Phys. Stat. Sol. (a), 202, No. 4, 566– 571, (2005)

⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie
J. Cryst. Growth, 278/1-4, 383-386, (2005)

⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth, 278/1-4, 393-396, (2005)

⋄ Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures.

J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies
Proc. Material Research Society Spring Meeting, , , (2005)

⋄ Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy

R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A. Diforte-Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys., 30 (2), 77-82, (2005)

⋄ High temperature electrical investigations of (Al,Ga)N/GaN heterostructures - Hall sensor applications

C. Consejo, S. Contreras, L. Konczewiez, P. Lorenzini, Y. Cordier, C. Skierbiszewski, J.L. Robert
Phys. Stat. Sol. (c), (4), 1438-43, (2005)

⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie
Phys. Stat. Sol. (c), 2, No. 7, 2195-2198, (2005)

⋄ Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes

J.M. Ulloa, A. Hierro, M. Montes, J. Miguel-Sánchez, A. Guzmán, B. Damilano , J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, and A. Trampert
Proc. SPIE Int. Soc. Opt. Eng., 5840, 81, (2005)

⋄ Interface band gap engineering in InAsSb photodiodes

M. Carras, J. L. Reverchon, G. Marre, C. Renard, B. Vinter, X. Marcadet, and V. Berger
Appl. Phys. Lett., 87 (10), 102103-3, (2005)

⋄ (Ga,In)(N,As)/GaAs quantum wells grown by molecular beam epitaxy for above 1.3 µm low threshold lasers

B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, A. Hierro
Proc. SPIE Int. Soc. Opt. Eng., 5840, 781, (2005)

⋄ Optoelectronica (en russe/in Russian)

E. Rosencher & B. Vinter
Technosphera, Moskva, , 1-592, (2005)

⋄ Structural and Electronic Properties of ZnMgO/ZnO Quantum Wells

C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, and G. Neu
Superlattice Microst, 38, 455-463, (2005)

⋄ Single-Transverse-Mode InGaAsP/InP Edge-Emitting Bipolar Cascade Laser

F. Dross, F. Van Dijk, O. Parillaud, B. Vinter, and N. Vodjdani
IEEE J. Quant. Electr., 41, 1356-60, (2005)

⋄ Performance improvement of 1.52 µm (Ga,In)(N,As)/GaAs quantum well

M. Hugues, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies, J.M. Ulloa, M. Montes, and A. Hierro
Electron. Lett., 41 No.10, 595, (2005)

⋄ Analysis of the room temperature performance of 1.3-1.52 µm GaInNAs/GaAs LDs grown by MBE

A. Hierro, J.M. Ulloa, M. Montes, B. Damilano, J. Barjon, M. Hugues, J.Y. Duboz, J. Massies
Proc. SPIE Int. Soc. Opt. Eng., 5840, 72, (2005)

⋄ High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN

D. Cai, F. Xu, J. Kang, P. Gibart and B. Beaumont
Appl. Phys. Lett., 86, 211917, (2005)

⋄ Room temperature performance of low threshold 1.34-1.44 µm GaInNAs/GaAs quantum-well lasers grown by molecular beam epitaxy

A. Hierro, J.M. Ulloa, E. Calleja, B. Damilano, J. Barjon, J.Y. Duboz, J. Massies
IEEE Photon. Techno. Letters, 17, Issue: 6, 1142-1144, (2005)

⋄ Electron mobility and transfer characteristics in AlGaN/GaN HEMTs

Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies
Phys. Stat. Sol. (c), 2, No. 7, 2720-2723, (2005)

⋄ Light-ion beam analysis for microelectronic applications

L. Hirsch, P. Tardy, G. Wantz, N. Huby, P. Moretto, L. Serani, F. Natali, B. Damilano, J. Y. Duboz and J. L. Reverchon
Nucl Inst and MethodB, 240, 265, (2005)

⋄ Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennéguès, A. Leycuras
Mat. Sci. For., 483-485, 213-216, (2005)

⋄ AlGaInN resonant-cavity LED devices studied by electro-modulated reflectance and carrier lifetime techniques

G. Blume, T.J.C. Hosea, S.J. Sweeney, P.de Mierry, and D. Lancefield
IEEE Proc. Optoelectronics, 152, 118, (2005)

⋄ Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities

K. Bejtka, F. Rizzi, P. R. Edwards, R.W. Martin, E. Gu, M.D. Dawson, I.M. Watson, I.R. Sellers, F. Semond
Phys. Stat. Sol. (a), 202, 2648, (2005)

⋄ Anisotropy-induced polarization mixture of surface acoustic waves in GaN/c-sapphire heterostructures

J. Pedros, F. Calle, J. Grajal, R.J. Jimenez Rioboo, Y. Takagaki, K.H. Ploog and Z. Bougrioua
Phys. Rev. B, 72, 075306, (2005)

⋄ First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, M. Germain, J.C. De Jaeger and C. Gaquière
IEE Microwave and Optical Technology Letters, 46, 4, 311-315, (2005)

⋄ Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes

F. Tinjod, P. de Mierry, D. Lancefield, Z. Bougrioua, S. Laugt, O. Tottereau, P. Lorenzini, S. Chenot, E. Virey, M.R. Kokta, J.L. Stone-Sundberg, D. Pauwels
J. Cryst. Growth, 285(4), 450-8, (2005)

⋄ Control of 3C–SiC/Si wafer bending by the "checker-board" carbonization method

T. Chassagne, G. Ferro, H. Haas, H. Mank, A. Leycuras, Y. Monteil, F. Soares, C. Balloud, Ph. Arcade, C. Blanc, H. Peyre, S. Juillaguet, J. Camassel
Phys. Stat. Sol. (a), 202, No. 4, 524–530, (2005)

⋄ Behaviour of the 3C-SiC(100) c(2×2) (C-terminated) and 3×2 (Si-rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures

M. Portail, S. Saada, S. Delclos, J.C. Arnault, P. Soukiassian, P. Bergonzo, T. Chassagne, A. Leycuras
Phys. Stat. Sol. (a), 202, No. 11, 2234-2239, (2005)

⋄ Origin of Below Band-Gap Photoluminescence from GaN Quantum Dots in AlN Matrix

K.S. Zhuravlev, D.D. Ree, V.G. Mansurov, A. Yu. Nikitin, M. Teisseire, N. Grandjean, G. Neu, and P. Tronc
AIP Conference Proceedings, , 772, 719, (2005)

⋄ AlGaInN resonant-cavity LED devices studied by electromodulated reflectance and carrier lifetime techniques

G. Blume, T.J.C. Hosea, S.J. Sweeney, P. de Mierry, D. Lancefield
IEEE Proceedings Optoelectronics., 152(2), 118-24, (2005)

⋄ Spin Carrier Exchange Interactions in (Ga,Mn)N and (Zn,Co)O Wide Band Gap Diluted Magnetic Semiconductor Epilayers

D. Ferrand, S. Marcet, W. Pacuski, E. Gheeraert, P. Kossacki, J.A. Gaj, J. Cibert, C. Deparis, H. Mariette, and C. Morhain
Journal of Superconductivity and Novel Magnetism, 18, 15, (2005)

⋄ High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

D. Gogova, H. Larsson, A. Kasic, G. Reza Yazdi, I. Ivanov, R. Yakimova, B. Monemar, E. Aujol, E. Frayssinet, J.P. Faurie, B. Beaumont and P. Gibart,
Jpn. J. Appl. Phys, 44, 1181-1185, (2005)

⋄ Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates

C. Renard, X. Marcadet, J. Massies Et O. Parillaud
J. Cryst. Growth, 278, 193, (2005)

⋄ Submicron periodic poling and chemical patterning of GaN

S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies
Appl. Phys. Lett., 87, 062106, (2005)

⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing

M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies
Proc. ESPC, , , (2005)

⋄ Ductile relaxation in cracked metal-organis chemical-vapor-deposition-grown AlGaN films on GaN

J.M. Bethoux and P. Vennéguès
J. Appl. Phys., 97, 123504, (2005)

⋄ Relaxation Mechanisms in MOVPE grown Al rich (Al,Ga)N/GaN Hetero-Structures

P. Vennéguès, Z. Bougrioua, J.M. Bethoux, M. Azize, O. Tottereau
J. Appl. Phys., 97, 4912, (2005)

⋄ Surface morphology of AlN and size dispersion of GaN quantum dots

A. Matsuse, N. Grandjean, B. Damilano Et J. Massies
J. Cryst. Growth, 274, 387, (2005)

⋄ Faceting and structural anisotropy of nanopatterned CdO (110) layers

J. Zúñiga-Pérez, C. Martinez-Tomas, V. Muñoz-Sanjosé, C. Munuera, C. Ocal, M. Laügt
J. Appl. Phys., 98, 034311, (2005)

⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1)

S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier
J. Cryst. Growth, 280, 44-53, (2005)

⋄ Status of AlGaN based Focal Plane Arrays for UV solar blind detection

J.L. Reverchon, G. Mazzeo, A. Dussaigne, J.Y. Duboz
Proc. SPIE, , , (2005)

⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c), 2, No. 7, 2187-2190, (2005)

⋄ High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy

S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies
Appl. Phys. Lett., 87, 133505, (2005)

⋄ Solar blind detectors based on AlGan grown on sapphire

J.Y. Duboz, N. Grandjean, F. Omnès, J.L. Reverchon, M. Mosca
Phys. Stat. Sol. (c), N3, 964-971, (2005)

⋄ Quantum and transport lifetimes of two-dimentional electrons gas in AlGaN/GaN heterostructures

P. Lorenzini, Z. Bougrioua, A. Tiberj, R. Tauk, M. Azize, M. Sakowicz, K. Karpierz, W. Knap
Appl. Phys. Lett., 87, 232107, (2005)

⋄ Growth of GaN/AlxGa1-xN-based Bragg reflectors on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition: Towards group III-nitride microcavities

H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, P. Wisniewski, S. Grzanka, M. Krysko, O. Tottereau, P. Vennéguès, P. Perlin, M. Leszczynski, and T. Suski
Proc. 9th Ann. Nanophys. Nanoel. Symp., , 338-339, (2005)

⋄ Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE

Z. Bougrioua, M. Azize, P. Lorenzini, M. Laügt, H. Haas
Phys. Stat. Sol. (a), 202, No. 4, 536-544, (2005)

⋄ Spectroscopy of a bulk GaN microcavity grown on Si(111)

N. Ollier, F. Natali, D. Byrne, P. Disseix, , M. Mihailovic, A. Vasson, J. Leymarie, F. Semond Et J. Massies
Jpn. J. Appl. Phys, 44, 4902, (2005)

⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon

F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson
Appl. Phys. Lett., 87, 021102, (2005)

⋄ Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulkcrystals and heterostructures of GaN

K. Jarašiunas, T. Malinauskas, A. Kadys, R. Aleksiejunas, M. Sudžius, S. Miasojedovas, S. Juršenas, A. Žukauskas, D. Gogova, A. Kakanakova-Georgieva, E. Janzén, H. Larsson, B. Monemar, P. Gibart, and B. Beaumont
Phys. Stat. Sol. (c), 2, No. 3, 1006– 1009, (2005)

⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells

F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71, 75311, (2005)

⋄ Free energy and capture cross section of the E2 trap in n-type GaN

J. Pernot, C. Ulzhöfer, P. Muret, B. Beaumont and P. Gibart
Phys. Stat. Sol. (a), 202, No. 4, 609-613, (2005)

⋄ LP MOVPE growth and characterization of high Al content AlxGa1−xN epilayers

C. Touzi, F. Omnès, B. El Jani and P. Gibart
J. Cryst. Growth, 279, 31-36, (2005)

⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy

B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies
IEE Proc.-Optoelectron., 151, No. 5, , (2004)

⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (b), 241, Issue 12, 2779-2782, (2004)

⋄ Spectroscopy of the electron states in self-organized GaN/AlN quantum dots

A. Helman, M. Tchernycheva, Kh. Moumanis, A. Lusson, F. H. Julien, F. Fossard, E. Monroy, B. Daudin, Le Si Dang, B. Damilano, N. Grandjean
Phys. Stat. Sol. (c), 1, Issue 6, 1456-1460, (2004)

⋄ Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano and N. Grandjean
J. Cryst. Growth, 262, Issues 1-4, 145-150, (2004)

⋄ Origin of power fluctuations in GaN resonant-cavity light-emitting diodes

B. Roycroft, M. Akhter, P. Maaskant, B. Corbett, A. Shaw, L. Bradley, P. de Mierry, M.A. Poisson
Optics Express, 12, 736, (2004)

⋄ Multilayer (Al,Ga)N structures for solar-blind detection

M. Mosca, J.L. Reverchon, N. Grandjean, J.Y. Duboz
IEEE J. Selec. Topics in Quant. Electronics, 10, 752, (2004)

⋄ Electronic properties of deep defects in n-type GaN

P. Muret, Ch. Ulzhöfer, J. Pernot, Y. Cordier, F. Semond, Ch. Gacquière, D. Théron
Superlattice Microst, 36, 435-443, (2004)

⋄ Low frequency noise behavior in GaN HEMT's on silicon substrate

L. Bary, E. Angeli, A. Rennane, G. Soubercaze-Pun, J.G. Tartarin, A. Minko, V. Hoel, Y. Cordier, C. Dua, R. Plana, J. Graffeuil
Proc. SPIE, 5470, 286-295, (2004)

⋄ Thermal characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and an pulsed I-V measurements

R. Aubry, J.C. Jacquet, C. Dua, H. Gérard, B. Dessertenne, M.A. Di Forte-Poisson, Y. Cordier and S.L. Delage
Mat. Sci. For., , , (2004)

⋄ Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors

R. Aubry, C. Dua, J.C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M.A.D. Poisson, S.L. Delage
Eur. Phys. J. Appl. Phys., 27(1-3), 293-6, (2004)

⋄ Highly regular nanometer-sized hexagonal pipes in 6H-SiC

W. Wulfhekel, D. Sander, S. Nitsche, A. Leycuras and M. Hanbücken
Applied Physics A, 79, 411-413 1, (2004)

⋄ Electronic structure of wurtzite and zinc-blende AlN

P. Jonnard, N. Capron, F. Semond, J. Massies, E. Martinez-Guerrero, H. Mariette
Eur. Phys. J. B, 42, 351, (2004)

⋄ Regular step formation on concave-shaped surfaces on 6H–SiC(0 0 0 1)

W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras and M. Hanbücken,
Surf. Sci., 550, 8, (2004)

⋄ Optical and structural characterization of self-organized stacked GaN/AlN quantum dots

G. Salviati, F. Rossi, N. Armani, V. Grillo, O. Martinez, A. Vinattieri, B. Damilano, A. Matsuse, N. Grandjean
J. Phys.: Condens. Matter, 16(2), S115-26, (2004)

⋄ Metal organic vapour phase epitaxy of GaN and lateral overgrowth

P. Gibart
Reports on Progress in Physics, 67(5), 667-715, (2004)

⋄ High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD

J.Y.Duboz, J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès,
Mater. Res. Soc. Symp. Proc., 798, 47-51, (2004)

⋄ Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs

A. Rebey, Z. Chine, W. Fathallah, B. El Jani, E. Goovaerts, S. Laügt
Microelectronics Journal, 35:11, 875-880, (2004)

⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties

M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies
Eur. Phys. J. Appl. Phys., 257, 259-262, (2004)

⋄ Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors

M. Mosca, J.L. Reverchon, F. Omnès, J.Y. Duboz
J. Appl. Phys., 95, 4367, (2004)

⋄ From GaAs:N to oversaturated GaAsN : Analysis of the band-gap reduction

T. Talierco, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.A. Pinault, M. Laügt, and E. Tournié
Phys. Rev. B, 69, 073303, (2004)

⋄ Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls"

T. Chassagne, A. Leycuras, C. Balloud, P. Arcade, H. Peyre, S. Juillaguet
Mat. Sci. For., 457-460, 273-276, (2004)

⋄ Checker-board carbonization for control and reduction of the mean curvature of 3C-SiC layers grown Si (100) substrates

T. Chassagne, G. Ferro, H. Haas, A. Leycuras, H. Mank, Y. Monteil
Mat. Sci. For., 457-460, 265-268, (2004)

⋄ Structural reorganisation of vicinal surfaces on 6H-SiC(0001) induced by hot hydrogen etching

W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras, M. Hanbucken
Applied Surface Science, 234 (1-4), 251-255, (2004)

⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature

F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie
Mater. Res. Soc. Symp. Proc., 798, 613-18, (2004)

⋄ Internal Photoemission in AlGaN solar blind detectors

J.Y. Duboz, N. Grandjean, F. Omnès, M. Mosca, J.L. Reverchon
Appl. Phys. Lett., 86, 063511, (2004)

⋄ High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates

A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 25, No.4, 167-169, (2004)

⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69, 125329, (2004)

⋄ Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-UV

J. L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schule, E. Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart
J. Appl. Phys., 95, 8275, (2004)

⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies
J. Appl. Phys., 96, 180, (2004)

⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride

S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science, 234, 445, (2004)

⋄ Plastic relaxation through buried cracks in AlGaN/GaN heterostructures

J.M. Bethoux, P. Vennéguès, M. Laügt and P. De Mierry
Eur. Phys. J. Appl. Phys., 257, 263-265, (2004)

⋄ Polarity inversion of GaN(0001) by a high Mg doping

S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies
J. Cryst. Growth, 269, 249, (2004)

⋄ Performances of AlGaN/GaN HEMTs in Planar Technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, M. Germain, J.C. De Jaeger, C. Gaquière
Proc. 12th GaAs and other Comp. Sem. Appl. Symp., , 303-306, (2004)

⋄ Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes

J. M. Ulloa, A. Hierro, J. Miguel-Sánchez, A. Guzmán, E. Tournié, J. L. Sánchez-Rojas, and E. Calleja
Appl. Phys. Lett., 85, 40, (2004)

⋄ Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pecz, P. Gibart, B. Beaumont
J. Appl. Phys., 96, 799-806, (2004)

⋄ Optical properties of edge emitting semiconductor laser diodes with coated Bragg mirror

J. Kovác, F. Uherek, D. Pudis, V. Gottschalch, G. Leibiger, T. Gühne, and B. Rheinländer
IEEE conference proceedings, , , (2004)

⋄ Anisotropic propagation of surface acoustic waves on nitride layers

J. Pedrós, F. Calle, J. Grajal, R.J. Jiménez Riobóo, C. Prieto, J.L. Pau, J. Pereiro, M. Hermann, M. Eickhoff and Z. Bougrioua,
Superlattice Microst, 36, Issues 4-6, 815-823, (2004)

⋄ Efficiency optimization of p-type doping in GaN:Mg layers grown by Molecular-Beam Epitaxy

F. B. Naranjo, E. Calleja, Z. Bougrioua, A. Trampert, X. Kong, K. H. Ploog
J. Cryst. Growth, 270, issues 3-4, 815-823, (2004)

⋄ Symmetry aspects of exciton–exciton interactions and biexciton transitions in wurtzite semiconductor structures

P. Tronc, Yu. E. Kitaev, V. P. Smirnov, M. Jacobson, G. Neu
Phys. Stat. Sol. (b), 241, 321, (2004)

⋄ GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties

C. Grazzi, A. Castaldini, A. Cavallini, H.P.D. Schenk, P. Gibart, and H. P. Strunk
Eur. Phys. J. Appl. Phys., 27, 193, (2004)

⋄ Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC

A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millian, N. Mestres, P. Vennéguès and J. Stoemenos
Electrochem. Solid-State Lett., 7, F93, (2004)

⋄ Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects

C. Morhain, M. Teisseire-Doninelli, S. Vézian, C. Deparis, P. Lorenzini, F. Raymond, J. Guion, G. Neu
Phys. Stat. Sol. (b), 241 (3), 631, (2004)

⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy

F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies
Sol. Stat. Comm., 132, 679, (2004)

⋄ Phonon deformation potential in hexagonal GaN

F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69, 155215, (2004)

⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy

M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36, 659, (2004)

⋄ Electrical characterisation of hole traps in n-type GaN

F. D. Auret, W. E. Meyer, L. Wu, M. Hayes, M. J. Legodi, B. Beaumont and P. Gibart
Phys. Stat. Sol. (a), 1–6, , (2004)

⋄ Group III-nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy

H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, S. Grzanka, M. Krysko, P. Prystawko, P. Wisniewski, M. Leszczynski, G. Franssen, J. Muszalski, T. Suski, and P. Perlin
Phys. Stat. Sol. (c), 1, 193, (2004)

⋄ UV metal semiconductor metal detectors

J.L. Reverchon, M. Mosca, N. Grandjean, F. Omnès, F. Semond, J.Y. Duboz, L. Hirsch
Proc. of NATO Conference, , , (2003)

⋄ High Pressure Study of the Electrical Transport Phenomena in AlGaN/GaN Heterostructures

Ch. Consejo, L. Konczewicz, S. Contreras, S. Lepkowsky, M. Zielinski, J.L. Robert, P. Lorenzini, Y. Cordier
Phys. Stat. Sol. (b), 235 (2), 232-237, (2003)

⋄ GaN based UV photodetectors

F. Omnès, E. Monroy
Nitride Semiconductors, Handbook on Materials and Devices, 13, , (2003)

⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys., 94, 6499, (2003)

⋄ Atomic structure of pyramidal defects in Mg-doped GaN

P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart
Phys. Rev. B, 68, 235214, (2003)

⋄ Photoluminescence spectroscopie of Ga(In)NAs quantum wells for emission at 1.5 µm

M.A Pinault, E. Tournié
Solid State Electronics, 47, 477, (2003)

⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems

A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Mater. Res. Soc. Symp. Proc., L5.5, , (2003)

⋄ Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire

J.L. Bubendorff, N. Grandjean, B. Damilano, M. Troyon
J. Cryst. Growth, 247, 284, (2003)

⋄ Photodétecteurs pour l'ultraviolet

F. Omnès, E. Monroy
Détecteurs optoélectroniques, 6, 171-204, (2003)

⋄ AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density

R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 39 (7), 626-628, (2003)

⋄ Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

R. Aubry, J.C. Jacquet, B. Dessertenne, E. Chartier, D. Adam, Y. Cordier, F. Semond, J. Massies, M.A. Diforte-Poisson, A. Romann, S.L. Delage
Eur. Phys. J. Appl. Phys., 22(2), 77-82, (2003)

⋄ Wide-bandgap semiconductor ultraviolet photodetectors (Topical review)

E. Monroy, F. Omnès, F. Calle
Semicond. Sci. Tech., 18, R33-R51, (2003)

⋄ Power Results at 4GHz of AlGaN/GaN HEMTs on High Resistive Silicon (111) substrate

N. Vellas, C. Gaquière, A. Minko, V. Hoël, J.C. De Jaeger, Y. Cordier, and F. Semond
IEEE Microwave and Wireless Components Letters, 13, n°3, 99-101, (2003)

⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth, 251, Issues 1-4, 811-815, (2003)

⋄ Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Y. Cordier, P. Lorenzini, J.M. Chauveau, D. Ferré, Y. Androussi, J. Dipersio, D. Vignaud, J.L.Codron
J. Cryst. Growth, 251, Issues 1-4, 822-826, (2003)

⋄ Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers

J.M. Chauveau, Y. Cordier, H.J. Kim, D. Ferré, Y. Androussi and J. Di Persio
J. Cryst. Growth, 251, Issues 1-4, 112-117, (2003)

⋄ Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon

J.Y. Duboz, N.B. De L’isle, L. Dua, P. Legagneux, M. Mosca, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies, R. Dudek, D. Poitras, T. Cassidy
Jpn. J. Appl. Phys, 42, 118, (2003)

⋄ Ordering in undoped hexagonal AlxGa1-xN grown on sapphire (0001) with 0.09 < x < 0.247

M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès
Phys. Stat. Sol. (b), 236 No 3, 729-739, (2003)

⋄ Engineering of an Insulating Buffer and Use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, E.T. Palacios, F. Calle, M. Leroux
Phys. Stat. Sol. (a), 195, No. 1, 93, (2003)

⋄ Carrier mobility versus carrier density in AlGaN/GaN quantum wells

J.L. Farvacque and Z. Bougrioua
Phys. Rev. B, 68, 035335, (2003)

⋄ Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy

J.M. Chauveau, Y. Androussi, A. Lefebvre, J. Di Persio, and Y. Cordier
J. Appl. Phys., 93, Issue 7, 4219-4225, (2003)

⋄ Failure analysis of structure laser by Electrostatic Force Microscopy

M. Azize, P. Girard, M. Teisseire, A. Baranov and A. Joullie
Journal of Vaccum Science Technology B, , , (2003)

⋄ 60-GHz high power performance In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMTs on GaAs

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte and D. Théron
IEEE Electron Device Letters, 24 N°12, 724–726, (2003)

⋄ Les nitrures d’éléments III

M. Leroux
Matériaux pour l’Optoélectronique, , , (2003)

⋄ Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots

A. Helman, K. Moumanis, M. Tchernycheva, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, F. Fossard, D. Le Si Dang, and B. Daudin
Mater. Res. Soc. Symp. Proc., 7, 169, (2003)

⋄ 10. Atomic structure determination of the Si-rich beta -SiC(001) 3*2 surface by grazing-incidence x-ray diffraction: a stress-driven reconstruction

M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, M. Noblet, S. Chiang, F. Semond
Phys. Rev. B, 68(16), 165321-1-8, (2003)

⋄ Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction

H. Enriquez, M. D'angelo, V.Yu. Aristov, V. Derycke, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond
J. Vac. Sci. Technol. B, 21(4), 1881-5, (2003)

⋄ Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments

A. Reale, G. Massari, A. Di-Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, J. Massies
J. Appl. Phys., 93(1), 400-9, (2003)

⋄ Cubic SiC surface structure studied by X-ray diffraction

M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond, L. Di-Cioccio, T. Billion
Mat. Sci. For., 433-436, 571-4, (2003)

⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters

D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies
Conference on Lasers and Electro-Optics Europe, 03TH8666, 178, (2003)

⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies
Phys. Rev. B, 68(15), 153313, (2003)

⋄ Evidence of an impurity band at an n-GaN/sapphire interface

C. Mavroidis, J.J. Harris, R.B. Jackman, Z. Bougrioua, I. Moerman
Diamond and Related Materials, 12, issues 3-7, 1127–1132, (2003)

⋄ AlGaN/GaN HEMTS: material, processing, and characterization

F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdú, Z. Bougrioua, I. Moerman.
J Mater Sci, 14, n° 5/7, 271-277, (2003)

⋄ Improved AlGaN/GaN High Electron Mobility Transistors using AlN interlayers

A. Jiménez, Z. Bougrioua, J. M. Tirado, A. F. Braña, E. Calleja, E. Muñoz, I. Moerman
Appl. Phys. Lett., 82, 4827, (2003)

⋄ Isoelecrtonic traps in heavily doped GaAs:(In,N)

R. Intartaglia, T. Talierco, P. Valvin, B. Gil, T. Bretagnon, P. Lefebvre, M.A. Pinault, E. Tournié
Phys. Rev. B, 68, 235202, (2003)

⋄ Detailed interpretation of electron transport in n-GaN

C. Mavroidis, J. J. Harris, M. J. Kappers, C. J. Humphreys, Z. Bougrioua
J. Appl. Phys., 93, 9095, (2003)

⋄ An X-ray and TEM study of inhomogeneous ordering in AlxGa1-xN layers grown by MOCVD

M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès
J. of Physics and Chemistry of Solids, 64, 1653-1656, (2003)

⋄ Incorporation of Dielectric Layers into the Processing of III-Nitride Based Heterostructure Field Effect Transistors

D. Mistele, T. Rotter, A. Horn, O. Katz, Z. Bougrioua, J. Aderhold, J. Graul, G. Bhir and J. Salzman
J. Electron. Mat., 32, 5, 355, (2003)

⋄ Origins of GaN(0001) Surface Reconstructions

S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
Surf. Sci., 541, 242, (2003)

⋄ Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche
Appl. Phys. Lett., 83, 5139, (2003)

⋄ Annealing effects on the crystal structure of GaInNAs quantum wells with large in and N content grown by molecular beam epitaxy

A. Hierro, J.M. Ulloa, J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, A. Guzman, J.L. Sanchez-Rojas, E. Calleja
J. Appl. Phys., 94, 2319, (2003)

⋄ Solar blind AlGaN Metal-Semiconducteur-Metal Devices for High Performance Flame Detection

M. Mosca, J.L. Reverchon, N. Grandjean, F. Omnès, J.Y. Duboz, I. Ribet, M. Tauvy
Mater. Res. Soc. Symp. Proc., 764, C4-4-1, (2003)

⋄ Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, and J. Christen
J. Cryst. Growth, 258, 232, (2003)

⋄ Indium surface segregation in AlSb and GaSb

C. Renard, X. Marcadet, J. Massies, I. Prévot, R. Bisaro, P. Galtier
J. Cryst. Growth, 259, 69, (2003)

⋄ Residual donors in wurtzite GaN homoepitaxial layers and heterostructures

G. Neu, M. Teisseire-Doninelli, C. Morhain, F. Semond, N. Grandjean, B. Beaumont, E. Frayssinet, W. Knap, A. M. Witowski, M. L. Sadowski, M. Leszczynski, P. Prystawko
Phys. Stat. Sol. (b), 235, 20, (2003)

⋄ GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 mm

E. Tournié, M.A. Pinault, M. Laügt, J.M. Chauveau, A. Trampert, K.H. Ploog
Appl. Phys. Lett., 82, 1845, (2003)

⋄ Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities

N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies
Phys. Stat. Sol. (a), 195, No.3, 543-550, (2003)

⋄ RBS studies of AlGaN/AlN Bragg reflectors

L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie
Phys. Stat. Sol. (a), 195, No.3, 502-507, (2003)

⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont
Appl. Phys. Lett., 82(9), 1386, (2003)

⋄ Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, K. Du, K.H. Ploog
J. Cryst. Growth, 251, 383, (2003)

⋄ Intraband spectroscopy of self-organized GaN/AlN quantum dots

A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang
Physica E, 17, 60, (2003)

⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells

A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Physica E, 17, 64, (2003)

⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Stat. Sol. (c), , , (2003)

⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation

T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Rev. B, 68, 205301, (2003)

⋄ Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells

J.M. Chauveau, A. Trampert, K.H. Ploog, M.A. Pinault, E. Tournié
Appl. Phys. Lett., 82, 3451, (2003)

⋄ Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector

D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies
Jpn. J. Appl. Phys, 42, Part 2, No. 12B, L1509, (2003)

⋄ Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers

S. Kret, G. Maciejewski, P. Dluzewski, P. Ruterana, N. Grandjean, and B. Damilano
Materials Chemistry and Physics, 81, 273, (2003)

⋄ High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano
Appl. Phys. Lett., 82, 499, (2003)

⋄ Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm

K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, J. Massies
Appl. Phys. Lett., 82, 868, (2003)

⋄ Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys

O. Pages, T. Tite, D. Bormann, E. Tournié, O. Maksimov, M.C. Tamargo
Appl. Phys. Lett., 82, 2808, (2003)

⋄ In surface segregation in InGaN/GaN quantum wells

A. Dussaigne, B. Damilano, N. Grandjean, J. Massies
J. Cryst. Growth, 251, 471, (2003)

⋄ Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies
J. Appl. Phys., 93(9), 5222-5226, (2003)

⋄ Indium distribution inside quantum wells : the effect of growth interruption in MBE

A.M. Sanchez, P. Ruterana, S. Kret, P. Dluzewski, G. Maciejewski, N. Grandjean, B. Damilano
Mater. Res. Soc. Symp. Proc., L5.6, , (2003)

⋄ LO phonon–plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys

T. Tite, O. Pages, M. Ajjoun, J.P. Laurenti, D. Bormann, E. Tournié, O. Maksimov, M.C. Tamargo
Solid State Electronics, 47, 455, (2003)

⋄ Exciton oscillator strength in GaN/AlGaN quantum wells

M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Stat. Sol. (a), 190, 129, (2002)

⋄ Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells

J. Kvietkiva, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190, 135, (2002)

⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes

S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (a), 190, 149, (2002)

⋄ Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells

A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190, 87, (2002)

⋄ Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N

E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdu, F.J. Sanchez, M.T. Montojo, M. Eickhoff, F. Omnès, Z. Bougrioua, I. Moerman
Semicond. Sci. Tech., 17,N°9, L47, (2002)

⋄ Photoluminescence of GaN microcrystallites prepared by a new solvothermal process.

C. Collado, G. Goglio, G. Demazeau, A.S. Barriere, L. Hirsch, M. Leroux
Mat. Res. Bull., 37, 841, (2002)

⋄ Influence of surface treatments on DC performance of GaN-based HFETs

T.D. Mistele, T. Rotter, Z. Bougrioua, M. Marso, H. Roll, H. Klausing, F. Fedler, O.K. Semchinova, J. Aderhold, I. Moerman, J. Graul
Phys. Stat. Sol. (a), 194 N°2, 452, (2002)

⋄ Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells

J. Kudrna, P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190, 155, (2002)

⋄ Observation of magnetophotoluminescence from aGaN/Al/subx/Ga/sub1-x/N heterosjunction

P.A. Shields, R.J. Nicholas, K. Takashina, N. Grandjean, J. Massies
Phys. Rev. B, 65, 195320, (2002)

⋄ In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes

K.P. O’donnell, M.E. White, S. Pereira, J.F.W. Mosselmans, N. Grandjean, B. Damilano, J. Massies
Mat. Sci. Eng. B, 93, 150, (2002)

⋄ Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures

I. Prevot, B. Vinter, X. Marcadet, J. Massies
Appl. Phys. Lett., 81, 3362, (2002)

⋄ Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation

S.P. Lepkowski, T. Suski, P. Perlin, V.Yu. Ivanov, M. Godlewski, N. Grandjean, J. Massies
J. Appl. Phys., 91, 9622, (2002)

⋄ Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

W. Knap, E. Borovitskaya, M.S. Shur, L. Hsu, W. Walukiewicz, E. Frayssinet, P. Lorenzini, N. Grandjean, C. Skierbiszewsk, P. Prystawko, M. Leszczynski, I. Grzegory
Appl. Phys. Lett., 80, 1228, (2002)

⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon.

M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart
Phys. Stat. Sol. (b), 234, 887, (2002)

⋄ Assessment of GaN metal-semiconductor-metal for high-energy ultraviolet photodetection

E. Monroy, T. Palacios, O. Hainaut, F. Omnès, F. Calle, J.F. Hochedez
Appl. Phys. Lett., 80, 1902, (2002)

⋄ Fabrication and characterization of AlGaN/GaN HEMTs

F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdu, Z. Bougrioua, I. Moerman
J Mater Sci, , , (2002)

⋄ Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J.J. Harris, R.B. Jackman, I. Harrison, N.J. Ansell, Z. Bougrioua, I. Moerman
J. Appl. Phys., 91, 9835, (2002)

⋄ High power AlGaN/GaN HEMTs on resistive silicon substrate

V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 38, 750, (2002)

⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111)

F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie
Jpn. J. Appl. Phys, 41(10B), L1140-2, (2002)

⋄ Recent progress of the BOLD investigation towards UV detectors for the ESA Solar Orbiter

J.F. Hochedez, J. Alvarez, F.D. Auret, P. Bergonzo, M.C. Castex, A. Deneuville, J.M. Defise, B. Fleck, P. Gibart, S.A. Goodman, O. Hainaut, J.P. Kleider, P. Lemaire, J. Manca, E. Monroy, E. Muñoz, P. Muret, M. Nesladek, F. Omnès, E. Pace, J.L. Pau, V. Ral
Diamond and Related Materials, 11, 427, (2002)

⋄ High linearity performances of GaN HEMT devices on silicon substrate at GHz

N. Vellas, C. Caquiere, Y. Guhel, M. Werquin, F. Bue, R. Aubry, S. Delage, F. Semond, J.C. De Jaeger
IEEE Electron Device Letters, 23(8), 461, (2002)

⋄ Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001)

D. Sander, W. Wulfhekel, M. Hanbucken, S. Nitsche, J.P. Palmari, F. Dulot, F.A. D'avitaya, A. Leycuras
Appl. Phys. Lett., 81 (19), 3570-3572, (2002)

⋄ Evidence for alloy formation in dilute GaAs:N compounds

E. Tournié, G. Neu, M. Teisseire, M.A. Pinault, M. Laügt
Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171, 27, (2002)

⋄ 200 Mbit/s Data Transmission through 100 Meters of Plastic Optical Fibre with Nitride LEDs

M. Akhter, P. Maaskant, B. Roycroft, B. Corbett, P. de Mierry, B. Beaumont, and K. Panzer
Electron. Lett., 38, 1457, (2002)

⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes

S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies
Appl. Phys. Lett., 80, 428, (2002)

⋄ Hypersonic characterization of sound propagation velocity in AlxGa1-xN thin films

R.J. Jimenez Rioboo, E. Rodriguez-Canas, M. Vila, C. Prieto, F. Calle, T. Palacios, M.A. Sanchez, F. Omnès, O. Ambacher, B. Assouar, E. Elmazria
J. Appl. Phys., 92(11), 6869, (2002)

⋄ Interplay between Ga-N and Al-N sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy

A.L. Alvarez, F. Calle, E. Monroy, J.L.Pau, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, F. Omnès, P. Gibart, P.R. Hageman
J. Appl. Phys., 92(1), 223, (2002)

⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, S. Delage
Electron. Lett., 38(2), 91, (2002)

⋄ Modelling and spectroscopy of GaN microcavities

N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 190, 187, (2002)

⋄ Displaced substitutional phosphorus acceptors in zinc selenide

D. Wolverson, J.J. Davies, S. Strauf, P. Michler, J. Gutowski, M. Klude, H. Heinke, K. Ohkawa, D. Hommel, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (b), 229, 257, (2002)

⋄ Atomic force microscopy study of the polymer growth in a polymer stabilized liquid crystal

H. Guillard, P. Sixou, O. Tottereau
Polym. Adv. Technol., 13, 491, (2002)

⋄ AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments

D. Mistele, T. Rotter, Z. Bougrioua, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul
Mater. Res. Soc. Symp. Proc., , , (2002)

⋄ Self compensation of the phosphorus acceptor in ZnSe

D. Seghier, H. Gislasson, C. Morhain, M. Teisseire, E. Tournié, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b), 229, 251, (2002)

⋄ Reliability of Schottky contacts on AlGaN

E. Monroy, F. Calle, T. Palacios, J. Sanchez-Osorio, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, P. Ruterana
Phys. Stat. Sol. (a), 188, 367, (2002)

⋄ 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire

F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie
Phys. Stat. Sol. (b), 229, 931, (2002)

⋄ Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers

C. Morhain, M. Teisseire, S. Vézian, F. Vigué, F. Raymond, P. Lorenzini, J. Guion, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b), 229, 881, (2002)

⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a), N°1, 61, (2002)

⋄ Full Si wafer conversion into bulk 3C-SiC

A. Leycuras, O. Tottereau, P. Vicente, L. Falkovsky, P. Girard, J. Camassel
Mat. Sci. For., 389-393, 147, (2002)

⋄ Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN

H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart
Appl. Phys. Lett., 75, 2587, (2002)

⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN

P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart
Mat. Sci. Eng. B, 93, 224, (2002)

⋄ Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, M. Verdu, F.J. Sanchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, E. San Andres
Phys. Stat. Sol. (a), 188, 307, (2002)

⋄ Structure and morphology of concave-shaped surfaces on 6H-SiC(0001) after H2 etching

F. Dulot, L. Mansour, A. Leycuras, W. Wulfhekel, D. Sander, F. Arnaud D'avitaya, M. Hanbucken
Applied Surface Science, 187, 219, (2002)

⋄ Growth of gallium nitride epitaxial layers by metal organics vapour phase epitaxy and applications

B. Beaumont, F. Omnès, P. De Mierry, P. Gibart
Vide Science, Technique et Applications, 3-4, 553, (2002)

⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN.

M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart
Phys. Stat. Sol. (a), 192, 394, (2002)

⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes

S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies
Phys. Stat. Sol. (a), 139, , (2002)

⋄ On the effect of high Mg doping on the polarity of GaN

P. Vennéguès, M. Benaïssa, B. Beaumont, B. Damilano, N. Grandjean
Institute of Physics Conferences Series, n°169, 307, (2002)

⋄ The GaN yellow luminescence center observed using optoelectronic modulation spectroscopy

C.H. Chiu, F. Omnès, C. Caquiere, P. Gibart, J.G. Swanson
Journ. of Physics D, 35, 609, (2002)

⋄ High responsivity submicron metal-semiconductor-metal ultraviolet detectors

T. Palacios, E. Monroy, F. Calle, F. Omnès
Appl. Phys. Lett., 81, 3198, (2002)

⋄ Properties of a hole trap in n-type hexagonal GaN

P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
J. Appl. Phys., 91(5), 2998, (2002)

⋄ Vertical cavity InGaN LEDs grown by MOVPE

P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart
Phys. Stat. Sol. (a), 192, 335, (2002)

⋄ In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle
Appl. Phys. Lett., 80, 174, (2002)

⋄ Donor spectroscopy in wurtzite GaN heterostructures

G. Neu, M. Teisseire-Doninelli, C. Morhain
Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171, 19, (2002)

⋄ Correlation between transport, optical and structural properties in AlGaN/GaN heterostructures

A. Jimenez, E. Calleja, E. Muñoz, M. Varela, C. Ballesteros, U. Jahn, K. Ploog, F. Omnès, P.Gibart
Mat. Sci. Eng. B, 93, 64, (2002)

⋄ Impact of the defects on the electrical and optical properties of AlGaN ultraviolet detectors

M. Hanzaz, A. Bouhdada, P. Gibart, F. Omnès
J. Appl. Phys., 92(1), 13, (2002)

⋄ Fmax of 490 GHz metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate

S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, A. Cappy
Electron. Lett., 38 N°8, 389, (2002)

⋄ Raman scattering in GaN pillar arrays

F. Demangeot, J. Gleize, J. Frandon, M.A. Renucci, M. Kuball, D. Peyrade, L. Manin-Ferlazzo, Y. Chen, N. Grandjean
J. Appl. Phys., 91, 2866, (2002)

⋄ Vibrational evidence for percolative effect in Zn1-xBexSe/GaAs

O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (b), 229, 25, (2002)

⋄ Minority Carrier Diffusion Lengths in silicon doped gallium nitride thin films measured by electron beam induced current

C. Grazzi, M. Albrecht, H.P. Strunk, Z. Bougrioua, I. Moerman
Solid State Phenomena, 82-84, 807, (2002)

⋄ Technology and performance of submicron metal-semiconductor-metal GaN ultraviolet detectors

T. Palacios, E. Monroy, F. Calle, F. Omnès
Proc. of the IEEE Device Research Conf., , 141, (2002)

⋄ Silicon effect on GaN surface morphology

Z. Benzarti, I. Halidou, O. Tottereau, T. Boufaden, B. El Jani
Microelectronics Journal, 1088, , (2002)

⋄ Relation between microstructure and 2DEG properties in AlGaN/GaN structures

B. Van Daele, G. Van Tendeloo, M. Germain, M. Leys, Z. Bougrioua, I. Moerman
Phys. Stat. Sol. (b), 234 N°3, 830, (2002)

⋄ Field distribution and collection efficiency in an AlGaN meta-semiconductor-metal detector

L. Hirsch, P. Moretto, J.Y. Duboz, J.L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 91, 6095, (2002)

⋄ Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon : results and simulation

J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Appl. Phys., 92, 5602, (2002)

⋄ Sub-micron technology in group-III nitrides : application to electronic devices

T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, F. Omnès, Z.Bougrioua, E. Muñoz
Proc. 11th Europ.Heterostructure Technology Work., , , (2002)

⋄ Free carrier mobility in AlGaN/GaN quantum wells

J.L. Farvacque, Z. Bougrioua, F. Carosella, I. Moerman
J. Phys.: Condens. Matter, 14, 13319, (2002)

⋄ Molecular beam epitaxy of group-III nitrides on silicon substrates : growth, properties and devices applications

F. Semond, Y. Cordier, N. Grandjean et al.
Phys. Stat. Sol. (a), 188 (2), 501-510, (2001)

⋄ Silicon nitride passivation effects on GaN MESFET

C. Gaquiere, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, J.C. De Jaeger, F. Omnès
Proc. WOCSDICE, , VIII-11, (2001)

⋄ Application and performance of GaN based UV detectors

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
Phys. Stat. Sol. (a), 185(1), 91, (2001)

⋄ Zn(MgBe)Se ultraviolet photodetectors

F. Vigué, J.P. Faurie
J. Electron. Mat., 30, 662, (2001)

⋄ Growth of GaN on (111) Si : a route towards self-supported GaN

H. Lahrèche, G. Nataf, E. Feltin, B. Beaumont, P. Gibart
J. Cryst. Growth, 231, 329, (2001)

⋄ Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie
J. Appl. Phys., 90, 5115, (2001)

⋄ 2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE"

Z. Bougrioua, J.L. Farvaque, I. Moerman, F. Carosella
Phys. Stat. Sol. (b), 228, 625, (2001)

⋄ Raman study of ZnxBe1-xSe solid solutions

O. Pages, M. Aijoun, J.P. Laurenti, D. Bormann, O. Gorochov, C. Chauvet, E. Tournié, J.P. Faurie
Optical Matérials, 17(1-2), 323, (2001)

⋄ Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells

B. Damilano, N. Grandjean, C. Pernot, J. Massies
Jpn. J. Appl. Phys, 40, L918, (2001)

⋄ (Al,Ga)N ultraviolet detectors on sapphire and Si substrates

E. Muñoz, E. Monroy, J.L. Pau, F. Calle, M.A. Sanchez, E. Calleja, F. Omnès, B. Beaumont, P. Gibart
Proc. WOCSDICE, , XV-5, (2001)

⋄ Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors.

G. Neu, M. Teisseire, P. Lemasson, H. Lahrèche, N. Grandjean, F. Semond, B. Beaumont, I. Grzegory, S. Porowski, R. Triboulet
Physica B, 302-303, 39, (2001)

⋄ CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia

T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Sol. Stat. Comm., 117, 445, (2001)

⋄ Dielectric microcavity in GaN/Si

J.Y. Duboz, L. Dua, G. Glastre, P. Legagneux, J. Massies, F. Semond, N. Grandjean
Phys. Stat. Sol. (a), 183, 35, (2001)

⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields

M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183, 61, (2001)

⋄ Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells

D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183, 129, (2001)

⋄ Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy

L. Siozade, P.Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183, 139, (2001)

⋄ Inelastic light scattering by phonons in hexagonal GaN-AlN nanostructures

J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Daudin, N. Grandjean
Phys. Stat. Sol. (a), 183, 157, (2001)

⋄ High quality p+-n+ GaAs tunnel junction diode grown by atmospheric pressure MOVPE

L. Beji, B. El Jani, P. Gibart
Phys. Stat. Sol. (a), 183, 273, (2001)

⋄ Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, S. Dalmasso, P. De Mierry, B. Beaumont, H. Lahrèche, A. Bouille, P. Gibart
Jpn. J. Appl. Phys, 40, L738, (2001)

⋄ Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : spectroscopic characterization and dislocation contrasts

S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart
J. Appl. Phys., 89, 3736, (2001)

⋄ Stress control in GaN grown on silicon(111) by MOPVE

E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart
Appl. Phys. Lett., 79, 3220, (2001)

⋄ Diamond UV detectors for future solar physics missions

J.F. Hochedez, P. Bergonzo, M.C. Castex, P. Dhez, O. Hainaut, M. Sacchi, J. Alvarez, H. Boyer, A. Deneuville, P. Gibart, B. Guizard, J.P. Kleider, P. Lemaire, C. Mer, E. Monroy, E. Muñoz, P. Muret, F. Omnès, J.L. Pau, V. Ralchenko, D. Tromson, E. Verwicht
Diamond and Related Materials, 10(3-7), 673, (2001)

⋄ Optical properties of self-assembled InGaN/GaN quantum dots

T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 22, (2001)

⋄ Strain state in GaN epilayers from optical experiments

E. Deleporte, C. Guenaud, M. Voos, B. Beaumont, P. Gibart
J. Appl. Phys., 89, 1116, (2001)

⋄ Wide band-gap ZnMgBeSe alloys grown onto GaAs by molecular-beam epitaxy

E. Tournié, F. Vigué, M. Laügt, J.P. Faurie
J. Cryst. Growth, 223, 461, (2001)

⋄ Modeling of absorption and emission spectra of InGaN layers grown by MBE

L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies
Mat. Sci. Eng. B, 82, 71, (2001)

⋄ Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields

D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 851, (2001)

⋄ Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultra-violet photodetection

F. Vigué, E. Tournié, J.P. Faurie
IEEE J. Quant. Electr., 37(9), 1146, (2001)

⋄ Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111)

F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 183, 163, (2001)

⋄ Surface morphology of GaN grown by molecular beam epitaxy

S. Vézian, J. Massies, F. Semond, N. Grandjean
Mat. Sci. Eng. B, 82, 56, (2001)

⋄ Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers

H.P.D. Schenk, M. Leroux, P. De Mierry, M. Laügt, F. Omnès, and P. Gibart
Mat. Sci. Eng. B, 82, 163, (2001)

⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300K in the whole visible qpectrum

B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 224, (2001)

⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE

S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Mat. Sci. Eng. B, 82, 256, (2001)

⋄ High electron mobility AlGaN/GaN heterostructures grown on Si(111) by molecular beam epitaxy

F. Semond, P. Lorenzini, N. Grandjean, J. Massies
Appl. Phys. Lett., 82, 335, (2001)

⋄ Influence of alloy stability on the photoluminescence properties of GaAs//GaAs quantum wells grown by molecular-beam epitaxy

M.A. Pinault, E. Tournié
Appl. Phys. Lett., 79, 3404, (2001)

⋄ Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

F. Vigué, E. Tournié, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz
Appl. Phys. Lett., 78(11), 4190, (2001)

⋄ Epitaxy of AlN and GaN thin films on silicon or sapphire for the development of high frequency SAW devices

F. Semond, H.P.D. Schenk, P. Gibart, S. Camou, T. Pastureaud, A. Soufyane, and S. Ballandras
Ann. Chim. Sci. Mater., 26, 177, (2001)

⋄ Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates

F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie
Appl. Phys. Lett., 79, 194, (2001)

⋄ From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization

M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies
Mat. Sci. For., 353-356, 795, (2001)

⋄ GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxy

N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Semicond. Sci. Tech., 16, 358, (2001)

⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties

B. Damilano, N. Grandjean, S. Vézian, J. Massies
J. Cryst. Growth, 227/228, 466, (2001)

⋄ Epitaxial Lateral overgrowth of GaN

B. Beaumont, P. Vennéguès, P. Gibart
Phys. Stat. Sol. (b), 227, 1-43, (2001)

⋄ Group-III nitride quantum heterostructures grown by molecular beam epitaxy

N. Grandjean, B. Damilano, J. Massies
J. Phys.: Condens. Matter, 13, 6945, (2001)

⋄ Crack-free thick GaN layers on silicon(111) by MOVPE

E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart
Phys. Stat. Sol. (a), 188, 531, (2001)

⋄ Epitaxial Lateral Overgrowth of GaN on Silicon (111)

E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart
Phys. Stat. Sol. (a), 188, 733, (2001)

⋄ Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE

H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle
Phys. Stat. Sol. (a), 188, 899, (2001)

⋄ Donor and donor bound-exciton spectroscopy in wurtzite GaN heterostructures.

M. Teisseire, G. Neu, C. Morhain
Phys. Stat. Sol. (b), 228, 501, (2001)

⋄ On carrier localization in GaInNAs/GaAs quantum well heterostructures

M.A. Pinault, E. Tournié
Appl. Phys. Lett., 78(11), 1562, (2001)

⋄ Photoluminescence excitation spectroscopy of MBE-grown InGaN quantum wells and quantum boxes

M.E. White, K.P. O'donnell, R.W. Martin, C.J. Deatcher, B.Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 228, 129, (2001)

⋄ Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures

P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Phys. Rev. B, 64, 115319, (2001)

⋄ Extremely sharp dependence of the exciton oscillator strength on quantum well width in the GaN/AlxGa1-xN system : the polarization field effect

M. Zamfirescu, B. Gil, N. Grandjean, G. Malpuech, A. Kavokin, P. Bigenwald, J. Massies
Phys. Rev. B, 64, 121304, (2001)

⋄ Excitonic properties of ZnS quantum wells

B. Urbaszek, C.M. Townsley, X. Tang, C. Morhain, A. Balocchi, K.A. Prior, R.J. Nicholas, B.C. Cavenett
Phys. Rev. B, 64(15), 155321, (2001)

⋄ Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe

J.J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel,E. Tournié, J.P. Faurie
Phys. Rev. B, 64, 205-206, 1, (2001)

⋄ Vibrational evidence for percolative effect in ZnBeSe

O. Pages, M. Aijoun, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Phys. Rev. B, 65, 035213, (2001)

⋄ Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure

A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux
Phys. Rev. B, 89, 3775, (2001)

⋄ Nuclear microprobe analysis of GaN bases light emitting diodes

L. Hirsch, A.S. Barriere, P. Moretto, B. Damilano, N. Grandjean, J. Massies, J.Y. Duboz
Phys. Stat. Sol. (a), 188, 171, (2001)

⋄ High performance solar blind detectors based on AlGaN grown by MBE on Si

J.Y. Duboz, J.L. Reverchon, D. Adam, B. Damilano, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 325, (2001)

⋄ Micro-Raman study of wurtzite AlN layers grown on Si(111).

J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, D. Semond, J. Massies
Phys. Stat. Sol. (a), 188, 511, (2001)

⋄ Free-carrier effects in gallium n itride epilayers : valence-band dispersion

P.A. Shields, R.J. Nicholas, F.M. Peeters, B. Beaumont, P. Gibart
Phys. Rev. B, 64, 081203, (2001)

⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect

P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (b), 228, 65, (2001)

⋄ Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers

C. Mavroidis, J.J. Harris, K. Lee, I. Harrison, B.J. Ansell, Z. Bougrioua, I. Moerman
Phys. Stat. Sol. (b), 228, 579, (2001)

⋄ Phonon-assisted optical transitions in GaN with impurities and defects

P. Tronc, Yu. E. Kitaev, G. Wang, M.F. Limonov, G. Neu
Physica B, 302-303, 291, (2001)

⋄ Raman mapping of epitaxial lateral overgrown GaN : stress at the coalescence boundary

M. Kuball, M. Benyoucef, B. Beaumont, P. Gibart
J. Appl. Phys., 90, 3656, (2001)

⋄ High quality AlxGa1-xN(0.15 £ x £ 0.45)/GaN distributed Bragg reflectors grown by MBE for resonant cavity LEDs

S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Semicond. Sci. Tech., 16, 913, (2001)

⋄ Heterostructure field effect transistor types with novel gate dielectrics

D. Mistele, T. Rotter, Z. Bougrioua, K.S. Rover, F. Fedler, H. Klausing, J. Stemmer, O.K. Semchinova, J. Aderhold, J. Graul
Phys. Stat. Sol. (a), 188, N°1, 225, (2001)

⋄ Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, and E. Doghèche
Phys. Stat. Sol. (a), 188, 537, (2001)

⋄ Core structure of dislocations in GaN revealed by transmission electron microscopy

T. Remmele, M. Albrecht, H.P. Strunk, A.T. Blumenau, M.I. Heggie, J. Elsner. T. Frauenheim, H.P.D. Schenk, and P. Gibart
Proc. Royal Microsc. Soc. Conf., , 323-326, (2001)

⋄ High temperature nitride sources for plastic optical fibre data buses

B. Corbett, P.P. Maaskant, M. Akhter, J.D. Lambkin, P. Gibart, P. De Mierry, H.P.D. Schenk, B. Beaumont, M.A. Poisson, N. Proust, E. Calleja, M.A. Sánchez-García, F. Calle, T. McCormack, E. O'Reilly, D. Lancefield, A. Crawford, M. Kamal, K. Panzer, H. Whi
Proc. Tenth Int’l Plastic Optic Fibres Conf., 10, 81-87, (2001)

⋄ Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
Mat. Sci. Eng. B, 82, 91, (2001)

⋄ Potentialities of GaN-based microcanivities grown on silicon substrates

N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 188, 519, (2001)

⋄ Large built-in electric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells

P. Perlin, T. Suski, S.P. Lepkowski, H. Teisseyre, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188, 839, (2001)

⋄ Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition

P. Ruterana, G. De Saint Jores, M. Laügt, F. Omnès, E. Bellet-Amalric
Appl. Phys. Lett., 78(3), 344, (2001)

⋄ Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells

M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Mat. Sci. Eng. B, 82, 140, (2001)

⋄ Photoconductance measurements and Stokes shift in InGaN alloys

J.L. Reverchon, F. Huet, M.A. Posson, J.Y. Duboz, B. Damilano, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82, 197, (2001)

⋄ Guided elastic waves in GaN on sapphire

S. Camou, Th. Pastureaud, H.P.D. Schenk, S. Ballandras, and V. Laude
Electron. Lett., 37, 1053, (2001)

⋄ Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical spectroscopy

P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, F. Semond, J. Massies
J. Microscopy, 202, 212, (2001)

⋄ New form of ordering in AlGaN

P. Ruterana, G. De Saint-Jores, F. Omnès
Mat. Sci. Eng. B, 82, 203, (2001)

⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy

P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78, 1252, (2001)

⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78, 1538, (2001)

⋄ Characterization of electron-irradiated n-GaN

S.A. Goodman, F.D. Auret, M.J. Legodi, B. Beaumont, P. Gibart
Appl. Phys. Lett., 78(11), 1538, (2001)

⋄ In-situ etching at InGaAs/GaAs quantum well interfaces

E. Chirlias, J. Massies, J.L. Guyaux, H. Moisan, J.C. Garcia
J. Cryst. Growth, 222, 471, (2001)

⋄ Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots

P.G. Gucciardi, A. Vinattieri, M. Colocci, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (b), 224, 53, (2001)

⋄ Direct signature of strained GaN quantum dots by Raman scattering

J. Gleize, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 79, 686, (2001)

⋄ AlGaN-based UV photodetectors

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
J. Cryst. Growth, 230 (3-4), 537, (2001)

⋄ Magneto-photoluminescence spectroscopy of GaN/AlGaN quantum wells : valence band reordering and excitonic binding energies

P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
Phys. Rev. B, 63, 245319, (2001)

⋄ Quantum beats of free and bound excitons in GaN

K. Kyhm, R.A. Taylor, J.F. Ryan, T. Aoki, M. Kkuwata-Gonokami, B. Beaumont, P. Gibart
Appl. Phys. Lett., 79, 1097, (2001)

⋄ Impact ionization of excitons in an electric field in GaN

D. Nelson, B. Gil, M.A. Jacobson, V.D. Kagan, N. Grandjean, B. Beaumont, J. Massies, P. Gibart
J. Phys.: Condens. Matter, 13, 7043, (2001)

⋄ III nitrides and UV detection

E. Muñoz, E. Monroy, J.L. Pau, F. Calle, F. Omnès, P. Gibart
J. Phys.: Condens. Matter, 13(32), 7115, (2001)

⋄ Magneto-photoluminescence of AlGaN/GaN quantum wells

P.A. Shields, R.J. Nicholas, N. Grandjean, J. Massies
J. Cryst. Growth, 230 (3-4), 487, (2001)

⋄ Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate : time evolution with low energy electron beam

S. Dassonneville, A. Amokrane, B. Sieber, J.L. Farvaque, B. Beaumont, P. Gibart, J.D. Ganiere, K. Leifer
J. Appl. Phys., 89, 7966, (2001)

⋄ Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN

A. Bell, I. Harrison, D. Karakakis, E.C. Larkins, J.M. Hayes, M. Kuball, N. Grandjean, J. Massies
J. Appl. Phys., 89, 1070, (2001)

⋄ Deuterium diffusion in Mg-doped GaN layers grown by MOVPE

P. Theys, Z. Teukam, F. Jomard, P. De Mierry, A.Y. Polyakov, M. Barbe
Semicond. Sci. Tech., 16, L53, (2001)

⋄ Finite element analysis of epitaxial lateral overgrown GaN : voids at the coalescence boundary

M. Benyoucef, M. Kuball, G. Hill, M. Wisnom, B. Beaumont, P. Gibart
Appl. Phys. Lett., 79, 4127, (2001)

⋄ High quality distributed Bragg refelctors based on AlxGa1-xN/GaN multilayers grown by MBE

S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog
Appl. Phys. Lett., 79, 2136, (2001)

⋄ Piezoelectric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells

S. P. Lepkowski, T. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies
Appl. Phys. Lett., 79, 1483, (2001)

⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau
Appl. Phys. Lett., 77, 2189, (2000)

⋄ GaN and InGaN quantum dots grown by MBE : from UV to red light emission

N. Grandjean, B. Damilano, J. Massies
Proc. of Int. Workshop on Nitride Semiconductors, , 1002, (2000)

⋄ High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO

H. Lahrèche, V. Bousquet, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart
Diamond and Related Materials, 9, 452, (2000)

⋄ ZnSe-based Schottky barrier photodetectors

F. Vigué, E. Tournié, J.P. Faurie
Electron. Lett., 36(25), 352, (2000)

⋄ High detectivity ZnSe-based Schottky barrier photodetectors for the blue and near-ultraviolet spectral range

F. Vigue, P. De Mierry, J.P. Faurie, E. Monroy, F. Calle, E. Muñoz
Electron. Lett., 36, 826, (2000)

⋄ Green electroluminescent (Ga,InAl)N LEDs grown on Si(111)

S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux
Electron. Lett., 36(20), 1728, (2000)

⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate.

N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht
J. Appl. Phys., 88, 183, (2000)

⋄ Phase separation in MOVPE AlxGa1-xN films deposited on 6H-SiC

P. Vennéguès, H. Lahrèche
Appl. Phys. Lett., 77, 4310, (2000)

⋄ Luminescence and absorption in InGaN epitaxial layers and the Van Roosbroeck-Shockley relation

H.P.D. Schenk, M. Leroux, and P. De Mierry
J. Appl. Phys., 88, 1525, (2000)

⋄ Growth of CVD thin films and thick LPE 3C-SiC in a specially designed reactor

A. Leycuras
Mat. Sci. For., 338-342, 241, (2000)

⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization

S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Thin Solid Films, 380, 195, (2000)

⋄ AlGaN based structures on sapphire for visible blind Schottky barrier UV photodetectors : towards high performance device applications

F. Omnès, E. Monroy, B. Beaumont, F. Calle, E. Muñoz, P. Gibart
Proc. SPIE, 3948, 234, (2000)

⋄ Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN

G. Neu, M. Teisseire, N. Grandjean, H. Lahrèche, B. Beaumont, I. Grzegory, S. Porowski, P. Tronc
Proc. Int. Conf. on the Physics of Semiconductors, , , (2000)

⋄ AlxGa1-xN-based UV photodetectors and waveguides

F. Omnès, E. Monroy, B. Beaumont, E. Doghèche, F. Calle, E. Muñoz, P. Gibart
Proc. of Compound Semiconductor Power Transistors, 2000-1, 205, (2000)

⋄ Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

M. Benaïssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai
Appl. Phys. Lett., 77, 2115, (2000)

⋄ ZnSe-based heterostructures for blue-green lasers.

J.P. Faurie, E. Tournié
CR. Acad. Sci. Paris, 1, série IV, 23, (2000)

⋄ AlxGa1-xN based UV visible –blind photodetector applications

F. Omnès, E. Monroy, F. Calle, E. Muñoz, B. Beaumont, P. Gibart
Opto-Electronics Review, 8(1), 43, (2000)

⋄ Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers

E. Tournié, G. Neu, M. Teisseire, J.P. Faurie, H. Pelletier, B. Theys
Phys. Rev. B, 62(19), 12868, (2000)

⋄ ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range

F. Vigué, A. Bouille, E. Tournié, J.P. Faurie
Phys. Stat. Sol. (a), 181(1), 301, (2000)

⋄ Low-noise metal-insulator-semiconductor UV photodiodes based on GaN

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès
Electron. Lett., 36(25), 2096, (2000)

⋄ Photoluminescence of GaAs grown by metalorganic molecular beam epitaxy in space ultra-vacuum

A. Freundlich, C. Horton, M.F. Vilela, M. Sterling, A. Ignatiev, G. Neu, M. Teisseire
J. Cryst. Growth, 209, 435, (2000)

⋄ Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy

H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart
J. Appl. Phys., 87, 577, (2000)

⋄ Reduction mechanims for defect densities in GaN using one or two-step epitaxial lateral overgrowth methods

P. Vennéguès, V. Bousquet, B. Beaumont, M. Vaille, P. Gibart
J. Appl. Phys., 87(12), 4175, (2000)

⋄ Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots

N. Grandjean, B. Damilano, J. Massies S. Dalmasso
Sol. Stat. Comm., 113, 495, (2000)

⋄ GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range

B. Damilano, N. Grandjean, J. Massies, F. Semond
Applied Surface Science, 164, 241, (2000)

⋄ Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(001) and GaAs(001)

C. Chauvet, E. Tournié, J.P. Faurie
J. Cryst. Growth, 214/215, 95, (2000)

⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy

B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie
Phys. Stat. Sol. (a), 180, 363, (2000)

⋄ Molecular beam epitaxy of ZnBeSe : influence of the substrate nature and epilayer properties

C. Chauvet, E. Tournié, P. Vennéguès, J.P. Faurie
Journal Electron. Mater., 29(6), 883, (2000)

⋄ Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homo-epitayers

G. Neu, M. Teisseire, E. Frayssinet, W. Knap, M.L. Sadowski, A.M. Witowski, K. Pakula, M. Leszczynski, P. Prystawko
Appl. Phys. Lett., 77, 1348, (2000)

⋄ Nature of the bandgap of Zn1-xBexSe alloys,

C. Chauvet, E. Tournié, J.P. Faurie
Phys. Rev. B, 61, 5332, (2000)

⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)

S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès
Phys. Rev. B, 61, 7618, (2000)

⋄ Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular- beam epitaxy

G. Neu, E. Tournié, C. Morhain, M. Teisseire, J.P. Faurie
Phys. Rev. B, 61, 15789, (2000)

⋄ Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

F. Vigué, E. Tournié, J.P. Faurie
Appl. Phys. Lett., 76, 242, (2000)

⋄ Growth of gallium nitride epitaxial layers and applications

B. Beaumont, P. Gibart, N. Grandjean, J. Massies
C.R. Acad. Sci. Paris, 1, série IV, 35, (2000)

⋄ Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN

P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart
Appl. Phys. Lett., 77, 880, (2000)

⋄ InGaN/GaN quantum wells grown by molecular beam epitaxy emitting from blue to red at 300K

B. Damilano, N. Grandjean, J. Massies, L. Siozade, J. Leymarie
Appl. Phys. Lett., 77, 1268, (2000)

⋄ Hydrogen/deuterium : a probe to investigate carrier-compensation in ZnSe:N

E. Tournié, H. Pelletier, G. Neu, B. Theys, A. Lusson, M. Teisseire, C. Chauvet, J.P. Faurie
J. Cryst. Growth, 214/215, 507, (2000)

⋄ High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC and sapphire substrates

W. Knap, E. Borovitskaya, M.S. Shur, R. Gaska, G. Karczewski, B. Brandt, D. Maude, E. Frayssinet, P. Lorenzini, N. Grandjean, J. Massies, J.W. Yang, X. Hu, G. Simin, M. Asif Khan, C.Skierbiszewski, P. Prystawko, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc., 639, G7.3, (2000)

⋄ Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures

L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies
Sol. Stat. Comm., 115, 575, (2000)

⋄ Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart
J. Cryst. Growth, 217, 13, (2000)

⋄ Réalisation de structures photoniques avancées

D. Peyrade, F. Carcenac, L. Manin, V. Thierry-Mieg, N. Grandjean, D. Coquillat, R. Legros, Y. Chen
J. Phys. IV France, 10, 8-125, (2000)

⋄ Comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN

B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahrèche, F. Omnès
J. Electron. Mat., 29, 603, (2000)

⋄ Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN

F.K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart, E. Calleja, E. Muñoz
J. Electron. Mat., 29, 1351, (2000)

⋄ Infrared studies on GaN single crystals and homoepitaxial layers

E. Frayssinet, W. Knap, P. Prystawko, M. Leszczynski, I.Grzegory, T. Suski, B. Beaumont, P. Gibart
J. Cryst. Growth, 218, 161, (2000)

⋄ Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements

A.F. Brana, A.F. Diaz-Paniagua, F. Batallan, J.A. Garrido, E. Muñoz, F. Omnès
J. Appl. Phys., 88(2), 932, (2000)

⋄ Time response analysis of ZnSe-based Schottky barrier photodetectors

E. Monroy, F. Vigue, F. Calle, E. Muñoz and J.P. Faurie,
Appl. Phys. Lett., 77, 2761, (2000)

⋄ Native vacancies in N-doped and undoped ZnSe layers studied by positron annihilation.

P. Desgardin, J. Oila, K. Saarinen, P. Hautojarvi, E. Tournié, J.P. Faurie, C. Corbel
Phys. Rev. B, 62, 15711, (2000)

⋄ High electron mobility in AlGaN/GaN heterostructures grown on bulk substrates

E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, M.S. Asif Khan, M.S. Shur, R. Gaska, D. Maude
Appl. Phys. Lett., 77, 2551, (2000)

⋄ Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures

E. Boroviskaya, W. Knap, M.S. Shur, R. Gaska, E. Frayssinet, P. Lorenzini, N. Grandjean, B. Beaumont, J. Massies, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski
Mater. Res. Soc. Symp. Proc., 639, G7.5, (2000)

⋄ Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures

P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Mater. Res. Soc. Symp. Proc., 639, G9.8, (2000)

⋄ Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron excitation

K.P. O'donnell, R.W. Martin, M.E. White, M.J. Tobin, J.F.W. Mosselmans, I.M. Watson, B. Damilano, N. Grandjean
Mater. Res. Soc. Symp. Proc., 639, G9.11, (2000)

⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red

Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J.
Mater. Res. Soc. Symp. Proc., 639, G10.1.1-11, (2000)

⋄ AlGaN photodiodes for monitoring the solar UV radiation

E. Muñoz, E. Monroy, F. Calle, F. Omnès, P. Gibart
Journal of Geophysical Research, 105, 4865, (2000)

⋄ Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN

P. De Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, P. Gibart, F. Jomard, S. Rushworth, L. Smith, and R. Odedra
MRS Internet J. Nitride Semicond. Res., 5, 8, (2000)

⋄ AlN and GaN layers deposited on sapphire or silicon substrates: Theory and experiment

T. Pastureaud, A. Soufyane, S. Camou, S. Ballandras, H.P.D. Schenk, F. Semond, J. Desbois, and V. Laude
Proc. IEEE Ultrason. Symp., 1, 293-297, (2000)

⋄ Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes

E. Monroy, F. Calle, J.L. Pau, F.J. Sanchez, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart
J. Appl. Phys., 88(2), 2081, (2000)

⋄ Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation

A. Amokrane, S. Dassonneville, B. Sieber, J.L. Farvaque, B. Beaumont, V. Bousquet, P. Gibart, J.D. Ganiere, K. Leifer
J. Phys.: Condens. Matter, 12, 10271, (2000)

⋄ Modeling of the spectral response of the AlxGa1-xN Schottky barrier ultraviolet photodetectors

A. Bouhdada, M. Hanzaz, P. Gibart, F. Omnès, E. Monroy, E. Muñoz
J. Appl. Phys., 87(12), 8286, (2000)

⋄ Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry

L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies,
Jpn. J. Appl. Phys, 39, 20, (2000)

⋄ Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures

J. Gleise, F. Demangeot, J. Frandon, M.A. Renucci, M. Kuball, N. Grandjean, J. Massies
Thin Solid Films, 364, 156, (2000)

⋄ GaAs/GaAs twist-bonding for compliant substrates : interface structure and epitaxial growth

G. Patriarche, C. Meriadec, G. Le Roux, C. Deparis, I. Sagnes, J.C. Harmand, F. Glas
Applied Surface Science, 164, 15, (2000)

⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures

M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald
Phys. Stat. Sol. (a), 178, 101, (2000)

⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells

M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 180, 127, (2000)

⋄ Modeling of the spectral response of the AlxGa1-xN p-n junction photodetectors

M. Hanzaz, A. Bouhdada, E. Monroy, E. Muñoz, P. Gibart, F. Omnès
Eur. Phys. J. Appl. Phys., 11, 29, (2000)

⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots

A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 180, 375, (2000)

⋄ Study of the band alignment in (Zn,Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy

C. Guenaud, E. Deleporte, A. Filoramo, Ph. Lelong, C. Delalande, C. Morhain, E. Tournié, J.P. Faurie
J. Appl. Phys., 87, 1863, (2000)

⋄ TEM study of crystal defects in ZnSe/GaAs(001) epilayers

S. Lavagne, C. Levade, G. Canderschaeve, J. Crestou, E. Tournié, J.P. Faurie
J. Phys.: Condens. Matter, 12(49), 10287, (2000)

⋄ Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Y. Xin, J.I. Arslan, S. Sivananthan, N.D. Browning, S.J. Pennycook, F. Omnès, B. Beaumont, J.P. Faurie, P. Gibart
Appl. Phys. Lett., 76, 466, (2000)

⋄ Optically detected magneto resonance mapping on the yellow luminescence in GaN

K. Koschnik, K. Michael, J.M. Spaeth, B. Beaumont, P. Gibart
Appl. Phys. Lett., 76, 1828, (2000)

⋄ GaN-AlGaN heterojunction field-effect-transistors over bulk GaN substrates

M.Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, G. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu
Appl. Phys. Lett., 76, 3807, (2000)

⋄ Surface kinetics of GaN evaporation and growth by molecular beam epitaxy

S. Y.Karpov, R.A.Talalaev, Y.N.Makarov, N.Grandjean, J.Massies, B.Damilano
Surf. Sci., 450, 191, (2000)

⋄ A Raman study of ZnxBe1-xSe alloy (100) epitaxial layers

O. Pages, M. Ajjouin, J.P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J.P. Faurie
Appl. Phys. Lett., 77, 519, (2000)

⋄ Signature of GaN-AlN quantum dots by nonresonant Raman scattering

J. Gleize, J. Frandon, F. Demangeot, M.A. Renucci, C. Adelmann, B. Daudin, G. Feuillet, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 77, 2174, (2000)

⋄ (Al,Ga)N Ultraviolet Photodetectors and Applications

E. Muñoz, E. Monroy, J.L. Pau, F. Calle, E. Calleja, F. Omnès, P. Gibart
Phys. Stat. Sol. (a), 180, 293, (2000)

⋄ Spectroscopic studies of InGaN ternary alloys

H.P.D. Schenk, P. De Mierry, F. Omnès, and P. Gibart
Phys. Stat. Sol. (a), 176, 307, (1999)