Fonctions

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Responsable du projet SiC / capteurs dans l'équipe Electro (50%)
Responsable de l'activité Optique dans l'équipe SCR (50%).

Activités

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CVD, SiC.
Photoluminescence, cathodoluminescence.

Publications (101)

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⋄ Highlighting the role of 3C‒SiC in the performance optimization of (Al,Ga)N‒based High‒Electron Mobility Transistors Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean‑Claude De Jaeger, Yvon Cordier Mat Sci Semicon Proc, 171,  107977, (2024) - Papier régulier

⋄ Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate Marie Lesecq, Yassine Fouzi, Ali Abboud, Nicolas Defrance, François Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude De Jaeger, Eric Frayssinet, Yvon Cordier Microelectron Eng, 276,  111998, (2023) - Article de conférence

⋄ InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC Julien Bosch, Lucie Valera, Chiara Mastropasqua, Adrien Michon, Maud Nemoz, Marc Portail, Jesús Zúñiga-Pérez, Maria Tchernycheva, Blandine Alloing, Christophe Durand Choisir un journal..., 275,  111995, (2023) - Article de conférence

⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès Crystals, 12,  1605, (2022) - Papier régulier

⋄ Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing Cryst. Growth Des., 22,  5206, (2022) - Papier régulier

⋄ Oxygen Isotope Variations in Mg-rich Olivines from Type I Chondrules in Carbonaceous Chondrites G. Libourel, K. Nagashima, M. Portail, A.N. Krot Geochim. Cosmochim. Acta, 319,  73-93, (2022) - Papier régulier

⋄ AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T. Huong Ngo, M.A. Daher, M. Zielinski, D. Alquier, J.C. De Jaeger and Y. Cordier Mat. Sci. For., 1062,  482-486, (2022) - Article de conférence

⋄ A New Approach in the Field of Hydrogen Gas Sensing Using MEMS Based 3C-SiC Microcantilevers P. Shanmugam, L. Iglesias, M. Portail, I. Dufour, D. Certon, D. Alquier, J.F. Michaud Mat. Sci. For., 1062,  593-597, (2022) - Article de conférence

⋄ Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material M. Zielinski, M. Bussel, C. Moisson, H. Mank, S. Monooye, M. Portail, A. Michon, Y. Cordier Mat. Sci. For., 1062,  140-145, (2022) - Article de conférence

⋄ Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride M. Zielinski, M. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier Mat. Sci. For., 1062,  84-88, (2022) - Article de conférence

⋄ Designing SiC Based CMUT Structures: An Original Approach and Related Materials Issues M. Portail, S. Chenot, M. Ghorbanzadeh-Bariran, R. Khazaka, L. Nguyen, D. Alquier and J.F. Michaud Mat. Sci. For., 1062,  94-98, (2022) - Article de conférence

⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier Phys. Stat. Sol. A, 217,7,  1900760, (2020) - Papier régulier

⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet Appl. Phys. Express., 13,  115504, (2020) - Papier régulier

⋄ Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon M. Zielinski, S. Monnoye, H. Mank, F. Torregrosa, G. Grosset, Y. Spiegel, M. Portail, A. Michon Mat. Sci. For., 1004,  132, (2020) - Article de conférence

⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover Sci Rep., 10,  18919, (2020) - Papier régulier

⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz J. Cryst. Growth, 507,  220, (2019) - Papier régulier

⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier Phys. Stat. Sol. A, 217,  1900760, (2019) - Papier régulier

⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet J. Cryst. Growth, 526,  125235, (2019) - Papier régulier

⋄ Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression R. Mantach , P. Vennéguès, J. Zúñiga-Pérez, P. De Mierry, M. Leroux, M. Portail, and G. Feuillet J. Appl. Phys., 125,  035703, (2019) - Papier régulier

⋄ Influence of aluminum incorporation on mechanical properties of 3C-SiC epilayers J.F. Michaud, M. Zielinski, J. Ben Messaoud, T. Chassagne, M. Portail, D. Alquier Mat. Sci. For., 924,  318-321, (2018) - Article de conférence

⋄ Screening and engineering of colour centres in diamond T. Lühman,N. Raatz, R. John, M. Lesik, J. Rödiger, M. Portail, D. Wildanger, F. Kleibler, K. Nordlund, A. Zaitsev, J-F. Roch, A. Tallaire, J. Meijer and S. Pezzagna J. Phys. D: Appl. Phys., 51 (48),  483002, (2018) - Papier régulier

⋄ Chondrules as direct thermochemical sensors of solar protoplanetary disk gas G. Libourel, M. Portail Science_Advances, 4(7),  eaar3321, (2018) - Papier régulier

⋄ A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations R. Dagher, E. Blanquet, C. Chatillon, T. Journot, M. Portail, L. Nguyen, Y. Cordier and A. Michon Cryst. Eng. Comm., 20,  3702-3710, (2018) - Papier régulier

⋄ A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate G. Gommé, G. Gautier, M. Portail, E. Frayssinet, D. Alquier, Y. Cordier, and F. Semond Phys. Stat. Sol. A, 4,  1600450, (2017) - Papier régulier

⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon Phys. Stat. Sol. A, 214(4),  1600436, (2017) - Papier régulier

⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing3C-SiC membranes R. Khazaka, J.-F. Michaud, P. Vennéguès, D. Alquier, and M. Portail Appl. Phys. Lett., 110,  081602, (2017) - Papier régulier

⋄ CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon Mat. Sci. For., 897,  731 - 734, (2017) - Papier régulier

⋄ Ion-induced interdiffusion of surface GaN quantum dots C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig Nuclear Instruments and Methods in Physics Research B, 409,  107, (2017) - Article de conférence

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies J. Cryst. Growth, 477,  262, (2017) - Papier régulier

⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiCgrowth direction R. Khazaka, J.-F. Michaud, P. Vennéguès, L. Nguyen, D. Alquier, and M. Portail J. Appl. Phys., 120,  185306, (2016) - Papier régulier

⋄ p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre Mat. Sci. For., 858,  137-142, (2016) - Article de conférence - invité

⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001) R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud Appl. Phys. Lett., 108,  011608, (2016) - Papier régulier

⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz J. Cryst. Growth, 433,  165-171, (2016) - Papier régulier

⋄ Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre Mat. Sci. For., 821-823,  149, (2015) - Article de conférence

⋄ Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate R. Khazaka, E. Bahette, M. Portail, D. Alquier, J.-F. Michaud Mater. Lett., 160,  28-30, (2015) - Papier régulier

⋄ 3C-SiC : new interest for MEMS devices J.F. Michaud, M. Portail, T. Chassagne, M .Zielinski and D. Alquier Mat. Sci. For., 3,  806, (2015) - Article de conférence

⋄ Investigation of Aluminium incorporation in 4H-SiC epitaxial layers R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet and H. Peyre Mat. Sci. For., 45,  806, (2015) - Article de conférence

⋄ Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier Nat. Commun, 6,  6806, (2015) - Papier régulier

⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud Mat. Sci. For., 821-823,  978, (2015) - Article de conférence

⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail Mat. Sci. For., 821-823,  1003, (2015) - Article de conférence

⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud Acta Mater., 98,  336, (2015) - Papier régulier

⋄ 3C-SiC: from electronic to MEMS devices J.F. Michaud, M. Portail and D. Alquier Advanced Silicon Carbide Devices and Processing , Edited by E. Saddow and F. La Via,  Intech, ISBN 978-953-51-2168-8, (2015) - Livres et chapitres de livres

⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski J. Cryst. Growth, 157,  404, (2014) - Papier régulier

⋄ Electrothermally driven high frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J.F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou and S. Gauthier J. Appl. Phys., 054304,  116, (2014) - Papier régulier

⋄ Magnetoresistance of disordered graphene: From low to high temperatures B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault Phys. Rev. B, 90,  035423, (2014) - Papier régulier

⋄ Rotated domain network in graphene on cubic-SiC(001) A.N. Chaika, O.V. Molodtsova, A.A. Zakharov, D. Marchenko, J. Sánchez-Barriga, A. Varykhalov, S.V. Babenkov, M. Portail, M. Zielinski, B.E. Murphy, S.A. Krasnikov, O. Lübben, I.V. Shvets and V.Y. Aristov Nanotechnology, 25,  135605, (2014) - Papier régulier

⋄ Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B.C. Camargo, Y. Kopelevich, J. Camassel, Phys. Rev. B, 89,  085422, (2014) - Papier régulier

⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier Appl. Phys. Lett., 104,  071912, (2014) - Papier régulier

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi J. Cryst. Growth, 398,  23, (2014) - Papier régulier

⋄ Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates N. Gogneau, A. Ben Gouider Trabelsi, M. Silly, M. Ridene, M. Portail, A. Michon, M. Oueslati, R. Belkhou, F. Sirotti, A. Ouerghi Nanotechnology, Science and Applications, 85,  7, (2014) - Papier régulier

⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail J. Appl. Phys., 113,  203501, (2013) - Papier régulier

⋄ Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier Microelec. Engineering, 105,  65, (2013) - Papier régulier

⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail Mat. Sci. For., 740-742,  117, (2013) - Article de conférence

⋄ Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si X. Song, J. Biscarrat; A. E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier Mat. Sci. For., 711,  154, (2012) - Article de conférence

⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001) A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel Mat. Sci. For., 717-720,  625, (2012) - Article de conférence

⋄ Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail, D. Alquier Mat. Sci. For., 711,  84, (2012) - Article de conférence

⋄ Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier Mat. Sci. For., 711,  179, (2012) - Article de conférence

⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111) A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski Mat. Sci. For., 711,  253, (2012) - Article de conférence

⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier Mat. Sci. For., 717-720,  621, (2012) - Article de conférence

⋄ A new approach for AFM cantilever elaboration with 3C-SiC S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier Materials Letters , 77,  54, (2012) - Papier régulier

⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier J. Cryst. Growth, 349,  27, (2012) - Papier régulier

⋄ Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier J. Appl. Phys., 111,  053507, (2012) - Papier régulier

⋄ A graphene electron lens L. Gerhard, E. Moyen, T. Balashov, I. Ozerov, M. Portail, H. Sahaf, L. Masson, W. Wulfhekel, M. Hanbücken Appl. Phys. Lett., 100,  153106, (2012) - Papier régulier

⋄ Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier Mat. Sci. For., 711,  61, (2012) - Article de conférence

⋄ Analytical model of stress relaxation in 3C-SiC layers on silicon M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier Mat. Sci. For., 679-680,  79, (2011) - Article de conférence

⋄ Electrical characterization of nitrogen implanted 3C-SiC by SSRM and c-TLM measurments X. Song, A.E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier Mat. Sci. For., 679-680,  193, (2011) - Article de conférence

⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail Phys. Stat. Sol. C, 9,  175-178, (2011) - Article de conférence

⋄ Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla Phys. Rev. B, 83,  205429, (2011) - Papier régulier

⋄ Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier Nucl. Instr. and Method Phys. Research B, 269,  2020, (2011) - Papier régulier

⋄ Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne, M. Zielinski Mat. Sci. For., 645-648,  585-588, (2010) - Article de conférence

⋄ Recent advances in surface preparation of silicon carbide and other wide band gap materials M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A.E. Bazin, J.F. Michaud, M. Portail Mat. Sci. For., 645-648,  753-758, (2010) - Article de conférence - invité

⋄ Evidence of electrical activity of extended defects in 3C-SiC grown on Si X. Song, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier Appl. Phys. Lett., 96,  142104, (2010) - Papier régulier

⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier AIP Conf Proc, 1292,  115, (2010) - Article de conférence

⋄ Thermally induced surface reorganization of 3C-SiC(111) epilayersgrown on silicon substrates M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski Mat. Sci. For., 645-648,  155-158, (2010) - Article de conférence

⋄ Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne, M. Portail, M. Zielinski, E. Collard, D. Alquier Mat. Sci. Eng. B, 171,  120, (2010) - Papier régulier

⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail Appl. Phys. Lett., 97,  171909, (2010) - Papier régulier

⋄ Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111) A. Ouerghi, R. Belkhou, M. Marangolo, M.G. Silly, S. El Moussaoui, M. Eddrief, L. Travers, M. Portail, F. Sirotti Appl. Phys. Lett., 97,  161905, (2010) - Papier régulier

⋄ Epitaxial graphene on 3C-SiC(111) pseudosubstrate: structural and electronic properties A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, F. Sirotti Phys. Rev. B, 82,  125445, (2010) - Papier régulier

⋄ Micromachining of thin 3C-SiC films for mechanical properties investigation J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier ACS Appl. Electron. Mater., 1246,  B09-04, (2010) - Article de conférence

⋄ Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J.F. Michaud, M. Portail, and D. Alquier AIP Conf Proc, 1292,  15, (2010) - Article de conférence

⋄ Epitaxial graphene on Cubic SiC(111)/Si(111) substrate A. Ouerghi, A. Kahouli , D. Lucot , M. Portail , L. Travers , J. Gierack , J. Penuelas , P. Jegou , A. Shukla , T. Chassagne , M. Zielinski Appl. Phys. Lett., 96,  191910, (2010) - Papier régulier

⋄ High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature A.E. Bazin, J.F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, and D. Alquier AIP Conf Proc, 1292,  51, (2010) - Article de conférence

⋄ Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry Mat. Sci. Eng. B, 165,  42, (2009) - Papier régulier

⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz J. Appl. Phys., 105,  083505, (2009) - Papier régulier

⋄ Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier Mat. Sci. Eng. B, 165,  9, (2009) - Papier régulier

⋄ Advances in liquid phase conversion of (100) and (111) oriented Si wafers into self standing 3C-SiC M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel Mat. Sci. For., 615-617,  49, (2009) - Article de conférence

⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski Appl. Phys. Lett., 95,  081903, (2009) - Papier régulier

⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne Mat. Sci. For., 600-603,  1277-1280, (2009) - Article de conférence

⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier Mat. Sci. For., 615-617,  169, (2009) - Article de conférence

⋄ Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates M. Zielinski, M. Portail, T. Chassagne, Y. Cordier Mat. Sci. For., 600-603,  207-210, (2008) - Article de conférence

⋄ Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre J. Cryst. Growth, 310,  3174-3182, (2008) - Papier régulier

⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne ACS Appl. Electron. Mater., 1068,  C04-05, (2008) - Article de conférence

⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates M. Portail, M. Nemoz, M. Zielinski, T. Chassagne Mat. Sci. For., 600-603,  231, (2008) - Article de conférence

⋄ Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne Phys. Stat. Sol. (c), 5, No. 6,  1983–1985, (2008) - Article de conférence

⋄ AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111) Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne J. Cryst. Growth, 310,  4417–4423, (2008) - Papier régulier

⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier Mater. Res. Soc. Symp. Proc., 1069,  1069-D07-09, (2008) - Article de conférence

⋄ P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si A.E. Bazin, J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, J.F. Lecoq, E. Collard, D. Alquier Mater. Res. Soc. Symp. Proc., 1068,  1068-C07-09, (2008) - Article de conférence

⋄ Low Specific Contact Resistance to 3C-SiC grown on (100) Si substrates A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard; D. Alquier Mat. Sci. For., 556-557,  721, (2007) - Article de conférence

⋄ Trends in nitrogen doping for 3C-SiC films on silicon M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras and J. Camassel Mat. Sci. For., 556-557,  207, (2007) - Article de conférence

⋄ Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras; J. Camassel Phys. Stat. Sol. (a), 204,  981, (2007) - Article de conférence

⋄ Behaviour of the 3C-SiC(100) c(2×2) (C-terminated) and 3×2 (Si-rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures M. Portail, S. Saada, S. Delclos, J.C. Arnault, P. Soukiassian, P. Bergonzo, T. Chassagne, A. Leycuras Phys. Stat. Sol. (a), 202, No. 11,  2234-2239, (2005) - Article de conférence

Encadrements en cours

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Encadrements terminés

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Mahdis Ghorbanzadeh Bariran (2021)

Barou Ane (2019)

Cursus

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