CNRS-CRHEA | Publications

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⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films

Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398, 23, (2014)

⋄ Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson
J. Cryst. Growth, 353, 108, (2012)

⋄ Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

H.P.D. Schenk, A. Bavard, E. Frayssinet, X. Song, F. Cayrel, H. Ghouli, M. Lijadi, L. NaÄ±m, M. Kennard, Y. Cordier, D. Rondi and D. Alquier
APEX, 5, 025504, (2012)
Abstract online (HAL) : click here...

⋄ Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy

E. Frayssinet, Y. Cordier, H.P.D. Schenk, and A. Bavard
Phys. Stat. Sol. C, 8, 1479-1482, (2011)

⋄ Growth of thick continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard
J. Cryst. Growth, 314, 85-91, (2011)

⋄ In-clustering effects in InAIN and InGaN revealed by high pressure studies

I. Gorczyca, T. Suski, A. Kaminska, G. Staszczak, H.P.D. Schenk, N.E. Christensen, A. Svane
Phys. Stat. Sol. A, 207, 1369, (2010)

⋄ Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

I. Gorczyca, A. Kaminska, G. Staszczak, R. Czernecki, S.P. Łepkowski, T. Suski, H.P.D. Schenk, M. Glauser, R. Butté, J.F. Carlin, E. Feltin, N. Grandjean, N.E. Christensen, and A. Svane
Phys. Rev. B, 81, 235206 , (2010)

⋄ Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications

H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, A. Dadgar, and A. Krost
J. Cryst. Growth, 311, 3984, (2009)

⋄ Development of thick GaN-on-silicon layers for rectifier applications

H.P.D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, E. Béraudo, S. Chenot, Y. Cordier, and J.Y. Duboz
EWMOVPE-XIII, D.14, 343-346, (2009)

⋄ Towards green lasing: ingredients for a green laser diode based on GaInN

A.D. Dräger, H. Jönen, H. Bremers, U. Rossow, P. Demolon, H.P.D. Schenk, J.Y. Duboz, B. Corbett, and A. Hangleiter
Phys. Stat. Sol. (c), C6 (S2), 792, (2009)

⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz
Phys. Stat. Sol. (c), S2, 897, (2009)

⋄ Band gap narrowing and radiative efficiency of silicon doped GaN

H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich, and D.H. Rich
J. Appl. Phys., 103, 103502, (2008)

⋄ GaN for x-ray detection

J.Y. Duboz, M. Laügt, H.P.D. Schenk, B. Beaumont, J.L. Reverchon, A.D. Wieck, and T. Zimmerling
Appl. Phys. Lett., 92, 263501, (2008)

⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors

R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson
International Workshop on Nitride Semiconductors, , , (2008)

⋄ Comparison of GaInN laser structures grown on different substrates

A.D. Dräger, D. Fuhrmann, C. Netzel, U. Rossow, H.P.D. Schenk, and A. Hangleiter
Phys. Stat. Sol. (c), 5, 2277, (2008)

⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN

H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter
Appl. Phys. Lett., 93, 081116, (2008)

⋄ Structural and electrical characterization of n-type GaN/AlxGa1-xN superlattices grown by metalorganic vapour phase epitaxy

H.P.D. Schenk, P. Demolon, S. Ndiaye, M. Laügt, T. Gühne, Z. Bougrioua, P. de Mierry, J.Y. Duboz, A.D. Dräger, C. Netzel, and A. Hangleiter
Proc. Int. Workshop Nitride Based Nanostruct., , 127, (2007)

⋄ Optoelectronic properties of GaN epilayers in the region of yellow luminescence

C. Grazzi, H.P. Strunk, A. Castaldini, A. Cavallini, H.P.D. Schenk, and P. Gibart
J. Appl. Phys., 100, 073711, (2006)

⋄ Fast, high-efficiency, and homogeneous room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire

M. Lorenz, R. Johne, T. Nobis, H. Hochmuth, J. Lenzner, M. Grundmann, H.P.D. Schenk, S.I. Borenstain, A. Schön, C. Bekeny, T. Voss, and J. Gutowski
Appl. Phys. Lett., 89, 243510, (2006)

⋄ Growth of GaN/AlxGa1-xN-based Bragg reflectors on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition: Towards group III-nitride microcavities

H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, P. Wisniewski, S. Grzanka, M. Krysko, O. Tottereau, P. Vennéguès, P. Perlin, M. Leszczynski, and T. Suski
Proc. 9th Ann. Nanophys. Nanoel. Symp., , 338-339, (2005)

⋄ GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties

C. Grazzi, A. Castaldini, A. Cavallini, H.P.D. Schenk, P. Gibart, and H. P. Strunk
Eur. Phys. J. Appl. Phys., 27, 193, (2004)

⋄ Group III-nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy

H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, S. Grzanka, M. Krysko, P. Prystawko, P. Wisniewski, M. Leszczynski, G. Franssen, J. Muszalski, T. Suski, and P. Perlin
Phys. Stat. Sol. (c), 1, 193, (2004)

⋄ Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, and J. Christen
J. Cryst. Growth, 258, 232, (2003)

⋄ Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche
Appl. Phys. Lett., 83, 5139, (2003)

⋄ Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN

H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart
Appl. Phys. Lett., 75, 2587, (2002)

⋄ Vertical cavity InGaN LEDs grown by MOVPE

P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart
Phys. Stat. Sol. (a), 192, 335, (2002)

⋄ In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle
Appl. Phys. Lett., 80, 174, (2002)

⋄ Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, and E. Doghèche
Phys. Stat. Sol. (a), 188, 537, (2001)
Abstract online (HAL) : click here...

⋄ Guided elastic waves in GaN on sapphire

S. Camou, Th. Pastureaud, H.P.D. Schenk, S. Ballandras, and V. Laude
Electron. Lett., 37, 1053, (2001)
Abstract online (HAL) : click here...

⋄ High temperature nitride sources for plastic optical fibre data buses

B. Corbett, P.P. Maaskant, M. Akhter, J.D. Lambkin, P. Gibart, P. De Mierry, H.P.D. Schenk, B. Beaumont, M.A. Poisson, N. Proust, E. Calleja, M.A. Sánchez-García, F. Calle, T. McCormack, E. O'Reilly, D. Lancefield, A. Crawford, M. Kamal, K. Panzer, H. Whi
Proc. Tenth Int’l Plastic Optic Fibres Conf., 10, 81-87, (2001)