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⋄ Influence of metal-organic vapor phase epitaxy parameters and Si(111) substrate type on the properties of AlGaN/GaN HEMTs with thin simple buffer

E. Frayssinet, P. Leclaire, J. Mohdad, S. Latrach, S. Chenot, M. Nemoz, B. Damilano, Y. Cordier
Phys. Stat. Sol. A, 214, 1600419, (2017)

⋄ Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

P. Leclaire, E. Frayssinet, C. Morelle, Y. Cordier, D. Théron and M. Faucher
J. Micromech. Microeng., 26, 105015, (2016)

⋄ AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Theron, M. Faucher
Semicond. Sci. Tech., 29, 115018, (2014)