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⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range

A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110, 084318, (2011)

⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth

N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry
Nanoscale Res. Lett., 5, 1878, (2010)

⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry
J. Cryst. Growth, 312, 2625, (2010)

⋄ Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf
Appl. Phys. Lett., 96, 231918, (2010)

⋄ Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy

P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf
Appl. Phys. Lett., 94, 191903, (2009)