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⋄ Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics

Morteza Monavaria, Jiaming Xu, Michel Khoury, Feng Wu,Philippe De Mierry,Philippe Vennéguès , Mikhail A. Belkin, and James S. Speck
Phys. Rev. Applied, 16, 054040, (2021)
Abstract online (HAL) : click here...

⋄ Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates

M. Khoury, H. Li, H. Zhang, B. Bonef, M. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J.S. Speck, S. Nakamura, S.P. DenBaars
ACS Appl. Mater. Interfaces, 11, 50, 47106-47111, (2019)

⋄ Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. Chow, P. Li, J. Kearns, A. A. Taylor, P. De Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars
Opt. Express, 27, 24154, (2019)
Abstract online (HAL) : click here...

⋄ Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Y. Cordier, R. Comyn, E. Frayssinet, M. Khoury, M. Lesecq, N. Defrance, and J.-C. De Jaeger
Phys. Stat. Sol. A, 10, 1700637, (2017)
Abstract online (HAL) : click here...

⋄ Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

M. Khoury, O. Tottereau, G. Feuillet, P. Vennéguès, and J. Zúñiga-Pérez
J. Appl. Phys., 122, 105108, (2017)
Abstract online (HAL) : click here...

⋄ 444nm InGaN light emitting diodes on low-defect-density (11-22) GaN templates on patterned sapphire

M. Khoury, H. Li, L. Y. Kuritzky, A.J. Mughal, P. de Mierry, S. Nakamura, J.S. Speck, and S. P. DenBaars
Appl. Phys. Express., 10, 106501, (2017)

⋄ Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates

H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E.A. Samsudin, P. de Mierry, S. Nakamura, J. S. Speck, S. P. DenBaars
ACS Appl. Mater. Interfaces, 9, 36417, (2017)

⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates

M. Khoury, P. Vennéguès, M. Leroux,V. Delaye, G. Feuillet and J. Zúñiga-Pérez
J. Phys. D: Appl. Phys., 49, 475104, (2016)

⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy

M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès
J. Cryst. Growth, 419, 88-93, (2015)

⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers

M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès
Semicond. Sci. Tech., 28, 035006, (2013)