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⋄ High breakdown voltages on pseudo-vertical p-n diodes by selective area growth of GaN on silicon

Thomas Kaltsounis, Mohammed El Amrani, David Plaza Arguello, Hala El Rammouz, Matthieu Lafossas, Simona Torrengo, Laurent Mendizabal, Alain Gueugnot, Denis Mariolle, Thomas Jalabert, Julien Buckley, Yvon Cordier and Matthew Charles
J. Appl. Phys., 136, 175705, (2024)

⋄ Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi-Vertical GaN-on-Si p-n Diode on 200 mm-Diameter Wafers

Thomas Kaltsounis, Mohammed El Amrani, David Plaza Arguello, Hala El Rammouz, Vishwajeet Maurya, Matthieu Lafossas, Simona Torrengo, Helge Haas, Laurent Mendizabal, Alain Gueugnot, Denis Mariolle, Thomas Jalabert, Julien Buckley,Yvon Cordier, and Matthew Charles
Phys. Stat. Sol. A, , 2400059, (2024)