Note : enter one criterion per search field 

⋄ Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

I. Gorczyca, A. Kaminska, G. Staszczak, R. Czernecki, S.P. Łepkowski, T. Suski, H.P.D. Schenk, M. Glauser, R. Butté, J.F. Carlin, E. Feltin, N. Grandjean, N.E. Christensen, and A. Svane
Phys. Rev. B, 81, 235206 , (2010)

⋄ High doping level in Mg-doped GaN layers grown at low temperature

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean
J. Appl. Phys., 103, 013110, (2008)

⋄ Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications

E. Feltin, J.F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, and N. Grandjean
Appl. Phys. Lett., 88, 051108, (2006)

⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1)

S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier
J. Cryst. Growth, 280, 44-53, (2005)

⋄ Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche
Appl. Phys. Lett., 83, 5139, (2003)

⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys., 94, 6499, (2003)

⋄ Vertical cavity InGaN LEDs grown by MOVPE

P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart
Phys. Stat. Sol. (a), 192, 335, (2002)

⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN

M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart
Phys. Stat. Sol. (a), 192, 394, (2002)

⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN

P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart
Mat. Sci. Eng. B, 93, 224, (2002)

⋄ In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle
Appl. Phys. Lett., 80, 174, (2002)

⋄ Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy

H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, and E. Doghèche
Phys. Stat. Sol. (a), 188, 537, (2001)
Abstract online (HAL) : click here...

⋄ Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, S. Dalmasso, P. De Mierry, B. Beaumont, H. Lahrèche, A. Bouille, P. Gibart
Jpn. J. Appl. Phys, 40, L738, (2001)

⋄ Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE

H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle
Phys. Stat. Sol. (a), 188, 899, (2001)

⋄ Epitaxial Lateral Overgrowth of GaN on Silicon (111)

E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart
Phys. Stat. Sol. (a), 188, 733, (2001)

⋄ Crack-free thick GaN layers on silicon(111) by MOVPE

E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart
Phys. Stat. Sol. (a), 188, 531, (2001)

⋄ Stress control in GaN grown on silicon(111) by MOPVE

E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart
Appl. Phys. Lett., 79, 3220, (2001)

⋄ From relaxed to highly tensily strained GaN grown on 6H-SiC and Si(111): optical characterization

M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, B. Beaumont, P. Gibart, J. Massies
Mat. Sci. For., 353-356, 795, (2001)

⋄ Growth of GaN on (111) Si : a route towards self-supported GaN

H. Lahrèche, G. Nataf, E. Feltin, B. Beaumont, P. Gibart
J. Cryst. Growth, 231, 329, (2001)

⋄ Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN

P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart
Appl. Phys. Lett., 77, 880, (2000)

⋄ Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN

P. De Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, P. Gibart, F. Jomard, S. Rushworth, L. Smith, and R. Odedra
MRS Internet J. Nitride Semicond. Res., 5, 8, (2000)

⋄ Green electroluminescent (Ga,InAl)N LEDs grown on Si(111)

S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux
Electron. Lett., 36(20), 1728, (2000)