Note : enter one criterion per search field 

⋄ Full InGaN red light emitting diodes

A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A.M. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J.C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta
J. Appl. Phys., 128, 135704, (2020)
Abstract online (HAL) : click here...

⋄ InGaN islands and thin films grown on epitaxial graphene

C. Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, A. Dussaigne and B. Hyot
Nanotechnology, 31, 405601, (2020)
Abstract online (HAL) : click here...

⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano.
Appl. Phys. Lett., 103, 032102, (2013)

⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett., 90, 101117, (2008)

⋄ High doping level in Mg-doped GaN layers grown at low temperature

A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean
J. Appl. Phys., 103, 013110, (2008)

⋄ Monolithic white light emitting diodes with a broad emission spectrum

A. Dussaigne, J. Brault, B. Damilano, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1, 57-60, (2007)

⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots

R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1, 183-186, (2007)
Abstract online (HAL) : click here...

⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11), 113304-1-4, (2006)
Abstract online (HAL) : click here...

⋄ Solar blind AlGaN photodetectors with a very high spectral selectivity

J.Y. Duboz , N. Grandjean, A. Dussaigne, M. Mosca, J.L. Reverchon, P.G. Verly, R.H. Simpson
Eur. Phys. J. Appl. Phys., 33, 5, (2006)

⋄ An AlGaN Based Linear Array for UV Solar Blind Imaging from 240 nm to 280 nm

G. Mazzeo, J.L. Reverchon, J.Y. Duboz, A. Dussaigne
IEEE Sensors Journal, 6(4), 957-63, (2006)

⋄ Diodes électroluminescentes blanches pour l'éclairage

B. Damilano, J. Brault, A. Dussaigne, J. Massies
Images de la Physique, , 86, (2006)

⋄ Status of AlGaN based Focal Plane Arrays for UV solar blind detection

J.L. Reverchon, G. Mazzeo, A. Dussaigne, J.Y. Duboz
Proc. SPIE, 5964, 596402, (2005)

⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy

M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36, 659, (2004)

⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (b), 241, Issue 12, 2779-2782, (2004)

⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies
J. Appl. Phys., 96, 180, (2004)
Abstract online (HAL) : click here...

⋄ Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano and N. Grandjean
J. Cryst. Growth, 262, Issues 1-4, 145-150, (2004)

⋄ Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector

D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies
Jpn. J. Appl. Phys, 42, Part 2, No. 12B, L1509, (2003)

⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Stat. Sol. (c), 0(7), 2666-2669, (2003)

⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation

T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Rev. B, 68, 205301, (2003)
Abstract online (HAL) : click here...

⋄ In surface segregation in InGaN/GaN quantum wells

A. Dussaigne, B. Damilano, N. Grandjean, J. Massies
J. Cryst. Growth, 251, 471, (2003)

⋄ High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano
Appl. Phys. Lett., 82, 499, (2003)

⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes

S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies
Phys. Stat. Sol. (a), 192(1), 139-143, (2002)