CNRS-CRHEA | Publications

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⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès
Crystals, 12, 1605, (2022)

⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
J. Cryst. Growth, 593, 126779, (2022)

⋄ Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/Sapphire template

Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub and Philippe Ferrandis
J. Appl. Phys., 131, 124501, (2022)

⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188, 108210, (2022)

⋄ New barrier layer design for the fabrication of GaN-MIS-HEMT Normally-off transistor

F. Cozette, B. Hassan, C. Rodriguez, E. Frayssinet, R. Comyn, F. Lecourt, N. Defrance, N. Labat, F. Boone, A. Soltani, A. Jaouad, Y. Cordier, H. Maher
Semicond. Sci. Tech., 36, 034002, (2020)

⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier
Semicond. Sci. Tech., 36, 024001, (2020)
Abstract online (HAL) : click here...

⋄ Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

T.H. Ngo, R. Comyn, E. Frayssinet, H. Chauveau, S. Chenot, B. Damilano, F. Tendille, B. Beaumont, J.-P. Faurie, N. Nahas, Y. Cordier
J. Cryst. Growth, 552, 125911, (2020)
Abstract online (HAL) : click here...

⋄ Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

M. Bah, D. Valente, M. Lesecq, N. Defrance, M. Garcia Barros, J-C. De Jaeger, E. Frayssinet, R. Comyn, T.H. Ngo, D. Alquier, Y. Cordier
Sci Rep., 10, 14166, (2020)
Abstract online (HAL) : click here...

⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,7, 1900760, (2020)
Abstract online (HAL) : click here...

⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses

E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217, 1900760, (2019)

⋄ Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

R. Comyn, Y. Cordier, S. Chenot, A. Jaouad, H. Maher, V. Aimez
Phys. Stat. Sol. A, 213, 917-924, (2016)
Abstract online (HAL) : click here...

⋄ Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS

R. Comyn, Y. Cordier, V. Aimez, and H. Maher
Phys. Stat. Sol. A, 212, 1145-1152, (2015)