CNRS-CRHEA

Publications transverses (307) - Publications d'autres équipes auxquelles CAT a contribué
⋄ DUV LEDs based on AlGaN Quantum Dots Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil Proc. SPIE, 11686, 116860T, (2021) - Article de conférence - invité
⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet Appl. Phys. Express., 13, 115504, (2020) - Papier régulier
⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover Sci Rep., 10, 18919, (2020) - Papier régulier
⋄ Full InGaN red light emitting diodes A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A.M. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J.C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta J. Appl. Phys., 128, 135704, (2020) - Papier régulier
⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud Appl. Phys. Lett., 117, 121103, (2020) - Papier régulier
⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters G. Schifani, T. Frisch, J. Brault, P. Vennéguès, S. Matta, M. Korytov, B. Damilano, J. Massies, and J.-N. Aqua ACS Appl. Nano Mater., 3, 4054, (2020) - Papier régulier
⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li Phys. Stat. Sol. A, 216(24), 1900655, (2019) - Papier régulier
⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil J. Appl. Phys., 126, 205701, (2019) - Papier régulier
⋄ Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers P. Henning , P. Horenburg, H. Bremers, U. Rossow, F. Tendille, P. Vennégués , P. de Mierry, J. Zúñiga-Pérez , and A. Hangleiter Appl. Phys. Lett., 115, 202103, (2019) - Papier régulier
⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures F. Chiaruttini, T. Guillet, C Brimont, B. Jouault, P. Lefebvre, J. Vives, S. Chenot, Y. Cordier, B. Damilano, and M. Vladimihristellerova Nano Lett., 19, 4911, (2019) - Papier régulier
⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Y. Cordier, R. Comyn, O. Tottereau, E. Frayssinet, M. Portail, M. Nemoz J. Cryst. Growth, 507, 220, (2019) - Papier régulier
⋄ Loss analysis in nitride deep ultraviolet planar cavity Z. Zheng, Y. Li, O. Paul, H. Long, S. Matta, M. Leroux, J. Brault, L. Ying, Z. Zheng, and B. Zhang J. Nanophotonics, 12, 043504, (2018) - Papier régulier
⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range J. Brault, M. Al Khalfioui, S. Matta, B. Damilano, M. Leroux, S. Chenot, M. Korytov, J.E. Nkeck, P Vennéguès, J.Y. Duboz, J. Massies and B. Gil Semicond. Sci. Tech., 33, 075007, (2018) - Papier régulier
⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001) S. Matta, J. Brault, T.H. Ngo, B. Damilano, M.Leroux, J. Massies, B. Gil Superlattices Microstruct., 114, 161, (2018) - Papier régulier
⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate R. Comyn, S. Chenot, W. El Alouani, M. Nemoz, E. Frayssinet, B. Damilano, Y. Cordier Phys. Stat. Sol. A, 215(9), 1700642, (2017) - Papier régulier
⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli, M. Leroux, J. Massies J. Cryst. Growth, 477, 262, (2017) - Papier régulier
⋄ Ion-induced interdiffusion of surface GaN quantum dots C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. Wieck, A. Ludwig Nuclear Instruments and Methods in Physics Research B, 409, 107, (2017) - Article de conférence
⋄ Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors S. Latrach, E. Frayssinet, N. Defrance, S. Chenot, Y. Cordier, C. Gaquière and H. Maaref Current Applied Physics, 17, 1601-1608, (2017) - Papier régulier
⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission S. Matta, J. Brault, T.H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil J. Appl. Phys., 122, 085706, (2017) - Papier régulier
⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers RSC Adv., 7, 25353, (2017) - Papier régulier
⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing3C-SiC membranes R. Khazaka, J.-F. Michaud, P. Vennéguès, D. Alquier, and M. Portail Appl. Phys. Lett., 110, 081602, (2017) - Papier régulier
⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet J. Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, and T. Guillet Appl. Phys. Lett., 109, 231101, (2016) - Papier régulier
⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiCgrowth direction R. Khazaka, J.-F. Michaud, P. Vennéguès, L. Nguyen, D. Alquier, and M. Portail J. Appl. Phys., 120, 185306, (2016) - Papier régulier
⋄ Ultraviolet light emitting diodes using III-N quantum dots J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil Mat Sci Semicon Proc, 55, 95, (2016) - Papier invité
⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates M. Khoury, P. Vennéguès, M. Leroux,V. Delaye, G. Feuillet and J. Zúñiga-Pérez J. Phys. D: Appl. Phys., 49, 475104, (2016) - Papier régulier
⋄ High temperature electrical transport study of Si-doped AlN S. Contreras, L. Konczewicz, J. Ben Messaoud, H. Peyre, M. Al Khalfioui, S. Matta, M. Leroux, B. Damilano, J. Brault Superlattices Microstruct., 98, 253, (2016) - Papier régulier
⋄ Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy X. S. Nguyen, H. W. Hou, P. De Mierry, P. Vennéguès, F. Tendille, A. R. Arehart, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua Phys. Stat. Sol. B, 253(11), 2225-2229, (2016) - Papier régulier
⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry Appl. Phys. Lett., 109, 082101, (2016) - Papier régulier
⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont AIP. Proceedings, 1566, 73, (2012) - Article de conférence
⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil Proc. SPIE, 8986, 89860Z, (2014) - Article de conférence
⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates J. Sellés, D. Rosales, B. Gil, G. Cassabois, T. Guillet, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, J. Massies Proc. SPIE, 9363, 93630Z, (2015) - Article de conférence
⋄ Improved performance of GaInNAs solar cell after UV-activated hydrogenation M. Fukuda, V. R. Whiteside, J. C. Keay, M. Al Khalfioui, M. Leroux, K. Hossain, T. D. Golding, I. R. Sellers IEEE PVSC, 42, 1-3, (2015) - Article de conférence
⋄ Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells M. Fukuda, V.R. Whiteside, J.C. Keay, Matthew B. Johnson, M. Al Khalfioui, M. Leroux, K. Hossain, T.D. Golding, I.R. Sellers IEEE PVSC, 40th PSVC, 0669-0673, (2014) - Article de conférence
⋄ Improved performance in GaInNAs solar cells by hydrogen passivation M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui J. Appl. Phys., 106, 141904, (2015) - Papier régulier
⋄ Photoluminescence study of Be-acceptors in GaInNAs epilayers Y. Tsai, B. Barman, T. Scrace, M. Fukuda, V. R. Whiteside, I. R. Sellers, M. Leroux, M. Al Khalfioui, and A. Petrou J. Appl. Phys., 117, 045705, (2015) - Papier régulier
⋄ Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS R. Comyn, Y. Cordier, S. Chenot, A. Jaouad, H. Maher, V. Aimez Phys. Stat. Sol. A, 213, 917-924, (2016) - Papier régulier
⋄ Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder J. Zúñiga-Pérez, L. Kappei, C. Deparis, F. Reveret, M. Grundmann, E. de Prado, O. Jamadi, J. Leymarie, S. Chenot, and M. Leroux Appl. Phys. Lett., 108, 251904, (2016) - Papier régulier
⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes G. Tabares, S. Mhedhbi, M. Lesecq, B. Damilano, J Brault, S. Chenot, A. Ebongué, P. Altuntas, N. Defrance, V. Hoel, Y. Cordier IEEE Photonic Tech L, 28, 1661, (2016) - Papier régulier
⋄ Polarity Control in Group-III Nitrides beyond Pragmatism S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht Phys. Rev. Applied, 5, 054004, (2016) - Papier régulier
⋄ Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zúñiga-Pérez Phys. Rev. B, 93, 115205, (2016) - Papier régulier
⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters J. Brault, S. Matta, T.H. Ngo, M. Korytov, D. Rosales, B. Damilano, M. Leroux, P. Vennéguès, M. Al Khalfioui, A. Courville, O. Tottereau, J. Massies, B. Gil Jpn. J. Appl. Phys., 55, 05FG06, (2016) - Papier régulier
⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez Phys. Stat. Sol. B, 253, 105-111, (2016) - Papier régulier
⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001) R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud Appl. Phys. Lett., 108, 011608, (2016) - Papier régulier
⋄ Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity R. Hahe, C. Brimont, P. Valvin, T. Guillet, F. Li, M. Leroux, J. Zúñiga-Pérez, X. Lafosse, G. Patriarche, and S. Bouchoule Phys. Rev. B, 92, 235308, (2015) - Papier régulier
⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez Appl. Phys. Express., 9, 015502, (2016) - Papier régulier
⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz J. Cryst. Growth, 433, 165-171, (2016) - Papier régulier
⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells K. Lekhal, S. Hussain, P. De Mierry, P. Vennéguès, M. Nemoz, J.M. Chauveau, B. Damilano J. Cryst. Growth, 434, 25, (2016) - Papier régulier
⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy D. Rosales, B. Gil, T. Bretagnon, J. Brault, P. Vennéguès, M. Nemoz, P. de Mierry, B. Damilano, J. Massies, and P. Bigenwald J. Appl. Phys., 118, 024303, (2015) - Papier régulier
⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud Acta Mater., 98, 336, (2015) - Papier régulier
⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate B. Damilano, S. Brochen, J. Brault, T. Hossain, F. Réveret, E. Frayssinet, S. Chenot, A. Courville, Y. Cordier and F. Semond Phys. Stat. Sol. A, 212, 2297–2301, (2015) - Papier régulier
⋄ Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate F. Tendille, M. Hugues, P. Vennéguès, M. Teisseire and P. De Mierry Semicond. Sci. Tech., 30, 065001, (2015) - Papier régulier
⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail Mat. Sci. For., 821-823, 1003, (2015) - Article de conférence
⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud Mat. Sci. For., 821-823, 978, (2015) - Article de conférence
⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez Phys. Stat. Sol. B, 252, 1096, (2015) - Papier régulier
⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission K. Lekhal, B. Damilano, T.H. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès and B. Gil Appl. Phys. Lett., 106, 142101, (2015) - Papier régulier
⋄ Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor A. Pérez-Tomás, G. Catalàn, A. Fontserè, V. Iglesias, H. Chen, P.M. Gammon, M.R. Jennings, M. Thomas, C.A. Fisher, Y.K. Sharma, M. Placidi, M. Chmielowska, S. Chenot, M. Porti, M. Nafría and Y. Cordier Nanotechnology, 26, 115203, (2015) - Papier régulier
⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy M. Khoury, M. Leroux, M. Nemoz, G. Feuillet, J. Zúñiga-Pérez and P. Vennéguès J. Cryst. Growth, 419, 88-93, (2015) - Papier régulier
⋄ Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger Mat. Sci. For., 806, 81-87, (2014) - Article de conférence
⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers Y. Cordier, E. Frayssinet, M. Chmielowska, M. Nemoz, A. Courville, P. Vennéguès, P. De Mierry, S. Chenot, J. Camus, K. Ait Aissa, Q. Simon, L. Le Brizoual, M. A. Djouadi, N. Defrance, M. Lesecq, P. Altuntas, A. Cutivet, A. Agboton, J.C. De Jaeger Phys. Stat. Sol. C, 3-4, 498-501, (2014) - Article de conférence
⋄ Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder W. Desrat, M. Chmielowska, S. Chenot, Y. Cordier, and B. Jouault Eur. Phys. J. Appl. Phys., 68, 20102, (2014) - Papier régulier
⋄ AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications P. Leclaire, S. Chenot, L. Buchaillot, Y. Cordier, D. Theron, M. Faucher Semicond. Sci. Tech., 29, 115018, (2014) - Papier régulier
⋄ Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knap, Y. Cordier, S. Chenot, M. Chmielowska, P. Shiktorov, E. Starikov, V. Gruzinskis Lithuanian Journal of Physics, 54, 58-62, (2014) - Papier régulier
⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron Phys. Stat. Sol. A, 211, 1655-1659, (2014) - Papier régulier
⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski J. Cryst. Growth, 157, 404, (2014) - Papier régulier
⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire J. Cryst. Growth, 404, 177-183, (2014) - Papier régulier
⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter B. Damilano, K. Lekhal, H. Kim-Chauveau, S. Hussain, E. Frayssinet, J. Brault, S. Chenot, P. Vennéguès, P. De Mierry, and J. Massies Proc. SPIE, 1G, 8986, (2014) - Article de conférence - invité
⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil Semicond. Sci. Tech., 29, 084001, (2014) - Papier invité
⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond Appl. Phys. Lett., 104, 241113, (2014) - Papier régulier
⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi J. Cryst. Growth, 398, 23, (2014) - Papier régulier
⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez J. Appl. Phys., 115, 153504, (2014) - Papier régulier
⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, J.M. Chauveau J. Cryst. Growth, 388, 35, (2014) - Papier régulier
⋄ Quantitative determination of compositional profiles using HAADF image simulations R. El Bouayadi, M. Korytov, P.A. van Aken, P. Vennéguès, and M. Benaissa Phys. Stat. Sol. C, 11, 284, (2014) - Papier régulier
⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties S. Hussain, K. Lekhal, H. Kim-Chauveau, P. Vennéguès, P. De Mierry and B. Damilano Semicond. Sci. Tech., 29, 035016, (2014) - Papier régulier
⋄ On the growth of Zn1–xMnxO thin films by plasma-assisted MBE C. Deparis, C. Morhain, J. Zúñiga-Pérez, J.M. Chauveau, H. Kim-Chauveau, P. Vennéguès, M. Teisseire, B. Vinter Phys. Stat. Sol. C, 10, 1322, (2013) - Article de conférence
⋄ Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance A. Pérez-Tomás, A. Fontserè, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier Semicond. Sci. Tech., 27, 125010, (2012) - Papier régulier
⋄ Room temperature generation of THz radiation in GaN quantum wells structures A. Penot, J. Torres, P. Nouvel, L. Varani, F. Teppe, C. Consejo, N. Dyakonova, W. Knapb, Y. Cordier, S. Chenot, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis Proc. SPIE, 8624, 862409, (2013) - Article de conférence
⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate T. Hossain, J. Wang, E. Frayssinet, S. Chenot, M. Leroux, B. Damilano, F. Demangeot, L. Durand, A. Ponchet, M.J. Rashid, F. Semond, and Y. Cordier Phys. Stat. Sol. C, 10, 425, (2012) - Article de conférence
⋄ Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J.C. Moreno and Y. Cordier ECS Solid State Letters, 2, p4, (2012) - Papier régulier
⋄ Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S.Chenot, J.C. Moreno, S. Rennesson and Y. Cordier Appl. Phys. Lett., 102, 093503, (2013) - Papier régulier
⋄ Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates A. Pérez-Tomás, A. Fontserè, J. Llobet, M. Placidi, S. Rennesson, N. Baron, S. Chenot, J.C. Moreno, and Y. Cordier J. Appl. Phys., 113, 174501, (2013) - Papier régulier
⋄ Magnetotransport studies of AlGaN/GaN heterostructures with 2 two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination W. Desrat, S. Contreras, L. Konczewicz, B. Jouault, M. Chmielowska, S. Chenot, and Y. Cordier J. Appl. Phys., 114, 023704, (2013) - Papier régulier
⋄ Optimization of Al0.29Ga0.71N//GaN High Electron Mobility Transistor heterostructures for high power/frequency performances S. Rennesson, F. Lecourt, N. Defrance, M. Chmielowska, S. Chenot, M. Lesecq, V. Hoel, E. Okada, Y. Cordier and J.C. De Jaeger IEEE Transactions on Electron Devices, 60, 3105, (2013) - Papier régulier
⋄ Built-in electric field in ZnO based semipolar quantum wells grown on (101-2) ZnO substrates J.M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux and B. Vinter Appl. Phys. Lett., 103, 262104, (2013) - Papier régulier
⋄ AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy S. Rennesson, B. Damilano, P. Vennéguès, S. Chenot, Y. Cordier Phys. Stat. Sol. A, 210, 480-483, (2013) - Papier régulier
⋄ Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter B. Damilano, H. Kim-Chauveau, E. Frayssinet, J. Brault, S. Hussain, K. Lekhal, P. Vennéguès, P. De Mierry, and J. Massies Appl. Phys. Express., 6, 092105, (2013) - Papier régulier
⋄ Probing the nature of carrier localization in GaInNAs epilayers by optical methods Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou Appl. Phys. Lett., 103, 012104, (2013) - Papier régulier
⋄ Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, et B. Damilano. Appl. Phys. Lett., 103, 032102, (2013) - Papier régulier
⋄ Plasmon energy from strained GaN quantum wells M. Benaissa, W. Sigle, M. Korytov, J. Brault, P. Vennéguès, and P.A. Van Aken Appl. Phys. Lett., 103, 021901, (2013) - Papier régulier
⋄ Fabrication and characterization of a room-temperature ZnO polariton laser F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, G. Malpuech, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, and J. Zúñiga-Pérez Appl. Phys. Lett., 102, 191118, (2013) - Papier régulier
⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies Jpn. J. Appl. Phys., 52, 08JG01, (2013) - Papier régulier
⋄ From excitonic to photonic polariton condensate in a ZnO-based microcavity F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, J. Zúñiga-Pérez, and G. Malpuech Phys. Rev. Lett., 110, 196406, (2013) - Papier régulier
⋄ Blue Light-Emitting Diodes Grown on ZnO Substrates Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht, I.C. Robin, J.L. Santailler, G. Feuillet, J.M. Chauveau Appl. Phys. Express, 6, 042101, (2013) - Papier régulier
⋄ Imaging and counting threadingdislocations in c-oriented epitaxialGaN layers M. Khoury, A. Courville, B. Poulet, M. Teisseire, E. Beraudo, M.J. Rashid, E. Frayssinet, B. Damilano, F. Semond, O. Tottereau and P Vennéguès Semicond. Sci. Tech., 28, 035006, (2013) - Papier régulier
⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies J. Cryst. Growth, 363, 282, (2013) - Papier régulier
⋄ Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux Superlattice Microst, 52, 541, (2012) - Papier régulier
⋄ Optical investigations of nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells L. Béaur, T. Bretagnon, B. Gil, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire and J.M. Chauveau Phys. Stat. Sol. C, 9, 1320, (2012) - Article de conférence
⋄ Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib Phys. Stat. Sol. C, 9, 523-526, (2012) - Article de conférence
⋄ Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, M.R. Jennings, P.M. Gammon, C.A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria, Nanotechnology, 23, 395204, (2012) - Papier régulier
⋄ Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1 ) A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno Mat. Sci. Eng. B, 52, 2547-2550, (2012) - Papier régulier
⋄ Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates M. Ramdani, M. Chmielowska, Y. Cordier, S. Chenot, F. Semond Solid State Electronics, 75, 86-92, (2012) - Papier régulier
⋄ Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale A. Fontserè, A. Pérez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafria Appl. Phys. Lett., 101, 093505, (2012) - Papier régulier
⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez Optics Express, 20, 18707, (2012) - Papier régulier
⋄ Micro and nano analysis of 0.2W.mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings, M. Porti, A. Bayer, M. Lanza and M. Nafría Appl. Phys. Lett., 99, 213504, (2011) - Papier régulier
⋄ Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings Microelectronic Engineering, 88 (10), 3140, (2011) - Papier régulier
⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001) A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel Mat. Sci. For., 717-720, 625, (2012) - Article de conférence
⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier Mat. Sci. For., 717-720, 621, (2012) - Article de conférence
⋄ High quality factor photonicresonators for nitride quantum dots T. Guillet, M. Mexis, S. Sergent, D. Néel, S. Rennesson, C. Brimont, T. Bretagnon, B. Gil, D. Sam-Giao, B. Gayral, F. Semond, M. Leroux, S. David, X. Checoury and P. Boucaud Phys. Stat. Sol. B, 249, 449, (2012) - Papier régulier
⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier J. Cryst. Growth, 349, 27, (2012) - Papier régulier
⋄ High quality factor of AlN microdisks embedding GaN quantum dot M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud Phys. Stat. Sol. C, 8, 2328, (2011) - Article de conférence
⋄ LO-phonon-assisted polariton lasing in a ZnO-based microcavity L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zúñiga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont and T. Guillet Phys. Rev. B, 85, 121201, (2012) - Papier régulier
⋄ Fabrication and growth of GaN-based micro and nanostructures B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez Int. J. of Nanotechnology, 9, 412-427, (2012) - Papier invité
⋄ Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1−xMgxO layers by molecular beam epitaxy Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.M. Chauveau Appl. Phys. Lett., 99, 261910 , (2011) - Papier régulier
⋄ Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, A. Wieck J. Cryst. Growth, 338, 20, (2012) - Papier régulier
⋄ Polariton lasing in a hybrid bulk ZnO microcavity T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule Appl. Phys. Lett., 99, 161104, (2011) - Papier régulier
⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau and J. Massies J. Appl. Phys., 110, 084318, (2011) - Papier régulier
⋄ Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells L. Béaur, T. Bretagnon, B. Gil, A. Kavokin, T. Guillet, C. Brimont, D. Tainoff, M. Teisseire, and J.M. Chauveau Phys. Rev. B, 84, 165312, (2011) - Papier régulier
⋄ Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V.V. Korotyeyev, and V.A. Kochelap Appl. Phys. Lett., 99, 082101, (2011) - Papier régulier
⋄ Ohmic Contact Resistance dependence on Temperature for GaN devices A. Pérez-Tomas, A. Fontsere, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon and M.R. Jennings Mat. Sci. For., 679-680, 816-819, (2011) - Article de conférence
⋄ 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility A. Pérez-Tomas, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan and P. Godignon Mat. Sci. For., 645-648, 1207-1210, (2010) - Article de conférence
⋄ Growth of GaN based structures on focused ion beam patterned templates Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.Y. Lo, Y.Y. Hu, A. Ludwig, A.D. Wieck Phys. Stat. Sol. C, 8, 1516–1519 , (2011) - Article de conférence
⋄ Polarized photoluminescence from nonpolar (11-20) (Ga,In)N multi-quantum-wells T. Gühne, Z. Bougrioua, M. Nemoz, R. Cmielowski, T. Bretagnon, B. Gil, M. Leroux Proc. 29th Int. Conf. Physics of Seminconductors ICPS, 1199, 191, (2009) - Article de conférence
⋄ Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN O. Aoudé, P. Disseix, J. Leymarie, A. Vasson, M. Leroux, E. Aujol, B. Beaumont, A. Trassoudaine, Y. André Phys. Rev. B, 77, 045206, (2008) - Papier régulier
⋄ Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime L. Orosz, F. Réveret, S. Bouchoule, J. Zúñiga-Pérez, F. Médard, J. Leymarie, P. Disseix, M. Mihailovic, E. Frayssinet, F. Semond, M. Leroux, M. Mexis, C. Brimont and T. Guillet Appl. Phys. Express, 4, 072001, (2011) - Papier régulier
⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier AIP Conf Proc, 1292, 115, (2010) - Article de conférence
⋄ High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, P. Boucaud Optics Letters, 36, 2203-2205, (2011) - Papier régulier
⋄ Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wells J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Morhain, C. Deparis, and B. Vinter J. Appl. Phys., 109, 102420, (2011) - Article de conférence - invité
⋄ Laser emission with excitonic gain in a ZnO planar microcavity T. Guillet, C. Brimont, P. Valvin, B. Gil1, T. Bretagnon, F. Médard, M. Mihailovic, J. Zúñiga-Pérez, M. Leroux, F. Semond, and S. Bouchoule Appl. Phys. Lett., 98, 211105 , (2011) - Papier régulier
⋄ Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates L. Béaur, T. Bretagnon, C. Brimont, T. Guillet, B. Gil, D. Tainoff, M. Teisseire and J.M. Chauveau Appl. Phys. Lett., 98, 101913, (2011) - Papier régulier
⋄ Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy D. Taïnoff, M. Al-Khalfioui, C. Deparis, B. Vinter, M. Teisseire, C. Morhain, and J.M. Chauveau Appl. Phys. Lett., 98, 131915, (2011) - Papier régulier
⋄ Study of the growth mechanisms of GaN/(Al,Ga)N Quantum Dots: correlation between structural and optical properties S. Sergent, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies J. Appl. Phys., 109, 053514, (2011) - Papier régulier
⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez Appl. Phys. Lett., 98, 011914, (2011) - Papier régulier
⋄ Filtering of defects in semipolar (11-22) GaN using 2-steps lateral epitaxial overgrowth N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry Nanoscale Res. Lett., 5, 1878, (2010) - Article de conférence
⋄ X-ray detectors based on GaN Schottky diodes J.Y. Duboz, E. Frayssinet, S. Chenot, J.L. Reverchon, M. Idir Appl. Phys. Lett., 97, 163504, (2010) - Papier régulier
⋄ Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy N. Kriouche, P. Vennéguès, M. Nemoz, G. Nataf and P. De Mierry J. Cryst. Growth, 312, 2625, (2010) - Papier régulier
⋄ Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates J.M. Chauveau, M. Teisseire, H. Kim-Chauveau, C. Deparis, C. Morhain, and B. Vinter Appl. Phys. Lett., 97, 081903, (2010) - Papier régulier
⋄ Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, J.M. Chauveau, M. Nemoz, S. Chenot, B. Damilano, F. Semond J. Cryst. Growth, 312 - n° 19, 2683-2688 , (2010) - Papier régulier
⋄ Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, E. Frayssinet, J.C. Moreno, F. Semond, M. Leroux, and S. Bouchoule J. Appl. Phys., 108, 043508, (2010) - Papier régulier
⋄ Carrier transfer and recombination dynamics of a long-lived and visiblerange emission from multi-stacked GaN/AlGaN quantum dots J.H. Kim, B.J. Kwon, Y.H. Cho, T. Huault, M. Leroux, J. Brault Appl. Phys. Lett., 97, 061905, (2010) - Papier régulier
⋄ Room temperature Strong coupling in low finesse GaN microcavities I.R. Sellers, F. Semond, M. Leroux, et al. MRS symposium, 892, 485-490, (2006) - Article de conférence
⋄ Deuterium Out-diffusion Kinetics in Magnesium-doped GaN J. Chevallier, F. Jomard, N.H. Nickel, P. de Mierry, S. Chenot, Y. Cordier, M.A. di Forte-Poisson, and S. Delage Mat. Res. Soc. Symp. Proc., 994, F03-22, (2007) - Article de conférence
⋄ Comparison between polar (0001) and semipolar (11-22) nitride blue-green light-emitting diodes grown on c-plane and m-plane sapphire substrates P. de Mierry, T. Guehne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf Jpn. J. Appl. Phys., 48, 031002, (2009) - Papier régulier
⋄ Improved semipolar (11-22) GaN quality using asymmetric lateral epitaxy P. de Mierry , N. Kriouche, M. Nemoz, and G. Nataf Appl. Phys. Lett., 94, 191903, (2009) - Papier régulier
⋄ Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching P. de Mierry, N. Kriouche, M. Nemoz, S. Chenot, and G. Nataf Appl. Phys. Lett., 96, 231918, (2010) - Papier régulier
⋄ Influence of the mirrors in the strong coupling regime in planar GaN microcavities F. Réveret, P. Disseix, J. Leymarie, A. Vasson, F. Semond, M. Leroux, J. Massies Phys. Rev. B, 77, 195303, (2008) - Papier régulier
⋄ Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns Y. Cordier, F. Semond, J.C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani and K. Blary Materials Science in Semiconductor Processing, 12, 16-20, (2009) - Article de conférence
⋄ Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors N. Baron, M. Leroux, N. Zeggaoui, P. Corfdir, F. Semond, Z. Bougrioua, M. Azize, Y. Cordier, J. Massies Phys. Stat. Sol. C, 6 - S2, 715-718, (2009) - Article de conférence
⋄ AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001) Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond Phys. Stat. Sol. C, 6 - S2, 1020-1023, (2009) - Article de conférence
⋄ Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111) Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M.P. Besland Phys. Stat. Sol. C, 6 - S2, 1016-1019, (2009) - Article de conférence
⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne Mat. Sci. For., 600-603, 1277-1280, (2009) - Article de conférence
⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies MRS symposium proceedings, 1068, 51-56, (2008) - Article de conférence
⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne ACS Appl. Electron. Mater., 1068, C04-05, (2008) - Article de conférence
⋄ Croissance d’héterostructures à base de Nitrure de Gallium pour applications en électronique de puissance Y. Cordier, N. Baron, M. Azize, S. Chenot Revue de l Electricite et de l Electronique, 10, 73-77, (2009) - Article de conférence
⋄ GaN transistor characteristics at elevated temperatures A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, A. Constant, P. Godignon, and J. Millán J. Appl. Phys., 106, 074519, (2009) - Papier régulier
⋄ The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111) N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, and J. Massies J. Appl. Phys., 105, 033701, (2009) - Papier régulier
⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux Phys. Rev. B, 79, 035328, (2009) - Papier régulier
⋄ Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Y. Cordier, N. Baron, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies J. Cryst. Growth, 311, 2002-2005, (2009) - Article de conférence
⋄ Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities K. Bejtka, F. Réveret, R.W. Martin, P.R. Edwards, A. Vasson, J. Leymarie, I. Sellers, J.Y. Duboz, M. Leroux, and F. Semond Appl. Phys. Lett., 92, 241105, (2008) - Papier régulier
⋄ GaN quantum dots in (Al,Ga)N-based Microdisks S. Sergent, J.C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, B. Gayral, D. Néel, S. David, P. Boucaud, M. Leroux, F. Semond J. Phys.: Conf. Ser., 210, 012005, (2010) - Article de conférence
⋄ Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results F. Médard, D. Lagarde, J. Zúñiga-Pérez, P. Disseix, J. Leymarie, M. Mihailovic, D.D. Solnyshkov, G. Malpuech, E. Frayssinet, S. Sergent, F. Semond, M. Leroux, S. Bouchoule J. Phys.: Conf. Ser., 210, 012026, (2010) - Article de conférence
⋄ Catalytic unzipping of carbon nanotubes to few-layer graphene sheets undermicrowaves irradiation I. Janowska , O. Ersen , T. Jacob, P. Vennéguès, D. Bégin, M.J. Ledoux, C. Pham-Huu Applied Catalysis A:General, 371, 22-30, (2009) - Papier régulier
⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli J. Appl. Phys., 103, 123112, (2008) - Papier régulier
⋄ Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature S. Faure, C. Brimont, T. Guillet, T. Bretagon, B. Gil, F. Médard, D. Lagarde, P. Disseix, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, E. Frayssinet, J.C. Moreno, F. Semond, and S. Bouchoule Appl. Phys. Lett., 95, 121102, (2009) - Papier régulier
⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski Appl. Phys. Lett., 95, 081903, (2009) - Papier régulier
⋄ Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities F. Médard, J. Zúñiga-Pérez, E. Frayssinet, J.C. Moreno, F. Semond, S. Faure, P. Disseix, J. Leymarie, M. Mihailovic, A. Vasson, T. Guillet, and M. Leroux Photonics and Nanostructures, 7, 26, (2009) - Article de conférence
⋄ GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures S. Sergent, J.C. Moreno, E. Frayssinet, S. Chenot, M. Leroux, and F. Semond Applied Physics Express, 2, 051003, (2009) - Papier régulier
⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier Mat. Sci. For., 615-617, 169, (2009) - Article de conférence
⋄ Development of thick GaN-on-silicon layers for rectifier applications H.P.D. Schenk, A. Bavard, E. Frayssinet, M. Kennard, D. Rondi, E. Béraudo, S. Chenot, Y. Cordier, and J.Y. Duboz EWMOVPE-XIII, D.14, 343-346, (2009) - Article de conférence - invité
⋄ Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption F. Medard, J. Zúñiga-Pérez, P. Disseix, M. Mihailovic, J. Leymarie, A. Vasson, F. Semond, E. Frayssinet, J. C. Moreno, M. Leroux, S. Faure, T. Guillet Phys. Rev. B, 79, 125302, (2009) - Papier régulier
⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies Phys. Stat. Sol. (b), 246, 845-845, (2009) - Papier régulier
⋄ (Zn, Mg)O/ZnO based heterostructures grown by molecular beam epitaxy on sapphire: polar vs non-polar J.M. Chauveau, C. Morhain, M. Teisseire, M. Laügt, C. Deparis, J. Zúñiga-Pérez, and B. Vinter Microelectronics Journal, 40, 512, (2009) - Article de conférence - invité
⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies Appl. Phys. Lett., 90, 101117, (2008) - Papier régulier
⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies Applied Physics Express, 1, 121101, (2008) - Papier régulier
⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies J. Appl. Phys., 105, 033519, (2009) - Papier régulier
⋄ Anisotropic chemical etching of semipolar {10-1-1}/{10-1+1} ZnO crystallographic planes: polarity versus dangling bonds E. Palacios-Lidon, B. Pérez-Garcia, P. Vennéguès, J. Colchero, V. Muñoz-Sanjosé, and J. Zúñiga-Pérez Nanotechnology, 20, 065701, (2009) - Papier régulier
⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz J. Appl. Phys., 105, 083505, (2009) - Papier régulier
⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier Mater. Res. Soc. Symp. Proc., 1069, 1069-D07-09, (2008) - Article de conférence
⋄ Residual strain in nonpolar a-plane Zn(1−x)MgxO (0< x <0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells J.M. Chauveau, J. Vives, J. Zúñiga-Pérez, M. Laügt, M. Teisseire, C. Deparis, C. Morhain, and B. Vinter Appl. Phys. Lett., 93, 231911, (2008) - Papier régulier
⋄ Growth and Characterization of Non-Polar (Zn,Mg)O/ZnO Quantum Wells and Multiple Quantum Wells J.M. Chauveau, B. Vinter, M. Laugt, M. Teisseire, P. Vennéguès, C. Deparis, J. Zúñiga-Pérez and C. Morhain J. Kor. Phys. Soc., 53(5), 2934, (2008) - Article de conférence
⋄ Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110) Y. Cordier, J.C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, and F. Semond IEEE Electron Device Letters, 29, 1187-1189, (2008) - Papier régulier
⋄ Interface structure and anisotropic strain relaxation of non polar wurtzite (11-20) and (10-10) orientations: ZnO epilayers grown on sapphire J.M. Chauveau, P. Vennéguès, M. Laügt, C. Deparis, J. Zúñiga-Pérez and C. Morhain J. Appl. Phys., 104, 073535, (2008) - Papier régulier
⋄ AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111) Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne J. Cryst. Growth, 310, 4417–4423, (2008) - Papier régulier
⋄ AlInN optical confinement layers for edge emitting group III-nitride laser structures H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz Phys. Stat. Sol. (c), S2, 897, (2009) - Article de conférence
⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson International Workshop on Nitride Semiconductors, , , (2008) - Article de conférence
⋄ Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne Phys. Stat. Sol. (c), 5, No. 6, 1983–1985, (2008) - Article de conférence
⋄ High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, and E. Muñoz Phys. Stat. Sol. (c), 5 - n°6, 1971-1973, (2008) - Article de conférence
⋄ Investigation of the optical properties of epitaxial-lateral-overgrown GaN on R- and M-sapphire T. Gühne, Z. Bougrioua, M. Albrecht, P. Vennéguès, M. Leroux, M. Laügt, S. Ndiaye, M. Teisseire, L. Nguyen, and P. Gibart Mater. Res. Soc. Symp. Proc., 955, 0955-I12-04, (2006) - Article de conférence
⋄ Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) andsemipolar (11-22) GaN in relation to microstructural characterization T. Gühne, M. Albrecht, Z. Bougrioua, P. Vennéguès, and M. Leroux J. Appl. Phys., 101, 113101, (2007) - Papier régulier
⋄ Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode T. Gühne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf Electron. Lett., 44, 231, (2008) - Papier régulier
⋄ Band-edge Photoluminescence and Reflectivity of nonpolar (11-20) and semipolar (11-22)GaN formed by Epitaxial Lateral Overgrowth on sapphire T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennéguès, B. Vinter, and M. Leroux Phys. Rev. B, 77, 075308, (2008) - Papier régulier
⋄ Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice-matched to GaN H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A.D. Dräger, and A. Hangleiter Appl. Phys. Lett., 93, 081116, (2008) - Papier régulier
⋄ Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer K. Bejtka, R.W. Martin, I.M. Watson, S. Ndiaye, M. Leroux Appl. Phys. Lett., 89, 191912, (2006) - Papier régulier
⋄ Fabrication and characterization of ultrathin double dielectric mirror GaN microcavities K. Bejtka, P.R. Edwards, R.W. Martin, F. Reveret, A. Vasson, J. Leymarie, I.R. Sellers, M. Leroux, and F. Semond Semicond. Sci. Tech., 8, 045008, (2008) - Papier régulier
⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates M. Portail, M. Nemoz, M. Zielinski, T. Chassagne Mat. Sci. For., 600-603, 231, (2008) - Article de conférence
⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies Superlattice Microst, 41, 376, (2007) - Article de conférence
⋄ Polariton emission in GaN microcavities M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies Superlattice Microst, 41, 284, (2007) - Article de conférence
⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli Appl. Phys. Lett., 92, 042119, (2008) - Papier régulier
⋄ Subsurface Fe doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, and P. Gibart J. Cryst. Growth, 310, 948, (2008) - Article de conférence
⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies Appl. Phys. Lett., 92, 051911, (2008) - Papier régulier
⋄ Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy J.M. Chauveau, M. Laügt, P. Vennéguès, M. Teisseire, B. Lo, C. Deparis, C. Morhain, and B. Vinter Semicond. Sci. Tech., 23 (3), 035005, (2008) - Papier régulier
⋄ Investigation of AlGaN/AlN/GaN Heterostructures for Magnetic Sensor Application from liquid helium temperature to 300°C L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot, N. Baron Appl. Phys. Lett., 92, 043504, (2008) - Papier régulier
⋄ AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Y. Cordier, M. Azize, N. Baron, S. Chenot, O. Tottereau, J. Massies J. Cryst. Growth, 309, 1–7, (2007) - Papier régulier
⋄ Anisotropic morphology of nonpolar a-plane quantum dots and quantum wells S. Founta, C. Bougerol, H. Mariette, B. Daudin and P. Vennéguès J. Appl. Phys., 102, 074304, (2007) - Papier régulier
⋄ Optical determination of the effective wetting layer thickness and composition in InAs/Ga(In)As quantum dots M. Hugues, M. Teisseire, J.M. Chauveau, B. Vinter, B. Damilano, J.Y. Duboz, and J. Massies Phys. Rev. B, 76 (7), 075335-6, (2007) - Papier régulier
⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa Phys. Rev. B, 74, 193308, (2006) - Papier régulier
⋄ High indium content AlInGaN films: growth, structure and optoelectronic properties M. Nemoz, E. Beraudo, P. De Mierry, P. Vennéguès, L. Hirsch Phys. Stat. Sol. (c), 4, No. 1, 137-140, (2007) - Article de conférence
⋄ Sensitivity of synchrotron radiation x-ray diffraction to the chemical ordering in epitaxial perovskite multilayers M. Nemoz, E. Dooryhee, J.L. Hodeau, C. Dubourdieu, H. Roussel, P. Bayle-Guillemaud J. Appl. Phys., 100, 124110, (2006) - Papier régulier
⋄ Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio and H. Moriceau Phys. Stat. Sol. (c), 4, n°7, 2670-2673, (2007) - Article de conférence
⋄ Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy J.M. Chauveau, D.A. Buell, M. Laugt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, and C. Morhain J. Cryst. Growth, 301-302, 366-9, (2007) - Article de conférence
⋄ Growth and characterization of A-plane ZnO and ZnCoO based heterostructures J.M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, M. Tesseire-Doninelli, and G. Neu Applied Physics A: Materials Science and Processing, 88 (1), 65-9, (2007) - Article de conférence
⋄ X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau and V. Muñoz -Sanjosé Appl. Phys. A, 88, 61, (2007) - Article de conférence
⋄ AlGaN/GaN HEMTs on (001) silicon substrates S. Joblot, Y. Cordier, F. Semond, P. Lorenzini, S. Chenot and J. Massies Electron. Lett., 42, 117-118, (2006) - Papier régulier
⋄ Developments for the production of high quality and high uniformity AlGaN/GaN heterostructures by Ammonia MBE Y. Cordier, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix J. Cryst. Growth, 301-302, 434-436, (2007) - Article de conférence
⋄ AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini and J. Massies Superlattice Microst, 40, 295-299, (2006) - Article de conférence
⋄ Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes F. Tinjod, P. de Mierry, D. Lancefield, Z. Bougrioua, S. Laugt, O. Tottereau, P. Lorenzini, S. Chenot, E. Virey, M.R. Kokta, J.L. Stone-Sundberg, D. Pauwels J. Cryst. Growth, 285(4), 450-8, (2005) - Papier régulier
⋄ Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates F. Tinjod, P. de Mierry, D. Lancefield, S. Chenot, E. Virey, J.L. Stone-Sundberg, M.R. Kokta, D. Pauwels Phys. Stat. Sol. (c), (6), 2199-202, (2006) - Article de conférence
⋄ Reduction of stacking faults in (11-20) and (11-22) GaN films by ELO techniques and benefit on GaN wells emission Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux Phys. Stat. Sol. (a), 204, n°1, 282-289, (2007) - Article de conférence
⋄ investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots M. Benaissa, P. Vennéguès, O. Tottereau, L. Nguyen and F. Semond Appl. Phys. Lett., 89, 231903, (2006) - Papier régulier
⋄ Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFTES Measured in Strong Inversion A. Pérez-Tomas, M. Vellvehi, N. Mestres, J. Millan, P. Vennéguès and J. Stoemenos Mat. Sci. For., 527-529, 1059, (2006) - Article de conférence
⋄ Characterization of high-k Ta/sub 2/Si oxidized films on 4H-SiC and Si substrates as gate insulator A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millan, N. Mestres, P. Vennéguès and J. Stoemenos J. Electrochem. Soc., 152(4), G259-65, (2005) - Papier régulier
⋄ Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE V.G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K.S. Zhuralev, P. Vennéguès Phys. Stat. Sol. (c), 3, No.6, 1548, (2006) - Article de conférence
⋄ Strong light-matter coupling in GaN microcavities grown on silicon (111) at room temperature I.R. Sellers, F. Semond, M. Leroux, J. Massies, A.L. Henneghien, P. Disseix, J. Leymarie and A. Vasson Phys. Stat. Sol. (b), 243(7), 1639, (2006) - Article de conférence
⋄ Strong coupling of light with A and B excitons in GaN microcavities grown on silicon I.R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A.L. Henneghien, J. Leymarie and A. Vasson Phys. Rev. B, 73, 033304, (2006) - Papier régulier
⋄ Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau Superlattice Microst, (40), 359-362, (2006) - Article de conférence
⋄ Quality and uniformity assessment of AlGaN/GaN Quantum Wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix Phys. Stat. Sol. (c), 3, N°6, 2325-2328, (2006) - Article de conférence
⋄ Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis Phys. Rev. B, 72 (24), 241305-4, (2005) - Papier régulier
⋄ Growth of GaN/AlxGa1-xN-based Bragg reflectors on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition: Towards group III-nitride microcavities H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, P. Wisniewski, S. Grzanka, M. Krysko, O. Tottereau, P. Vennéguès, P. Perlin, M. Leszczynski, and T. Suski Proc. 9th Ann. Nanophys. Nanoel. Symp., , 338-339, (2005) - Article de conférence
⋄ Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennéguès, A. Leycuras Mat. Sci. For., 483-485, 213-216, (2005) - Article de conférence
⋄ Origin of Below Band-Gap Photoluminescence from GaN Quantum Dots in AlN Matrix K.S. Zhuravlev, D.D. Ree, V.G. Mansurov, A. Yu. Nikitin, M. Teisseire, N. Grandjean, G. Neu, and P. Tronc AIP Conference Proceedings, 772, 719, (2005) - Article de conférence
⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies Phys. Rev. B, 71, 75311, (2005) - Papier régulier
⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson Appl. Phys. Lett., 87, 021102, (2005) - Papier régulier
⋄ Structural and Electronic Properties of ZnMgO/ZnO Quantum Wells C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, and G. Neu Superlattice Microst, 38, 455-463, (2005) - Article de conférence - invité
⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies Phys. Stat. Sol. (c), 2, No. 7, 2187-2190, (2005) - Article de conférence
⋄ Submicron periodic poling and chemical patterning of GaN S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, and J. Massies Appl. Phys. Lett., 87, 062106, (2005) - Papier régulier
⋄ Hexagonal c-axis GaN layers grown by metallorganic vapor-phase epitaxy on Si (0 0 1) S. Joblot, E. Feltin, E. Beraudo, P. Vennéguès, M. Leroux, F. Omnès, M. Laügt, Y. Cordier J. Cryst. Growth, 280, 44-53, (2005) - Papier régulier
⋄ Ductile relaxation in cracked metal-organis chemical-vapor-deposition-grown AlGaN films on GaN J.M. Bethoux and P. Vennéguès J. Appl. Phys., 97, 123504, (2005) - Papier régulier
⋄ 1.1 eV (Ga,In)(N,As) solar cells grown by molecular beam epitaxy : properties and effects of annealing M. Al Khalfioui, B. Damilano, M. Leroux, J. Barjon, S.W. Wan, J.Y. Duboz, J. Massies Proc. ESPC, 151(5), 433-436, (2005) - Article de conférence
⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111) Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies J. Cryst. Growth, 278/1-4, 393-396, (2005) - Article de conférence
⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie Mater. Res. Soc. Symp. Proc., 798, 613-18, (2004) - Article de conférence
⋄ Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects C. Morhain, M. Teisseire-Doninelli, S. Vézian, C. Deparis, P. Lorenzini, F. Raymond, J. Guion, G. Neu Phys. Stat. Sol. (b), 241 (3), 631, (2004) - Article de conférence
⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies Sol. Stat. Comm., 132, 679, (2004) - Papier régulier
⋄ Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millian, N. Mestres, P. Vennéguès and J. Stoemenos Electrochem. Solid-State Lett., 7, F93, (2004) - Papier régulier
⋄ (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy B. Damilano, J. Barjon, S.W. Wan, J.Y. Duboz, M. Leroux, M. Laügt and J. Massies IEE Proc.-Optoelectron., 151, No. 5, 433-436, (2004) - Article de conférence
⋄ Polarity inversion of GaN(0001) by a high Mg doping S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies J. Cryst. Growth, 269, 249, (2004) - Papier régulier
⋄ Plastic relaxation through buried cracks in AlGaN/GaN heterostructures J.M. Bethoux, P. Vennéguès, M. Laügt and P. De Mierry Eur. Phys. J. Appl. Phys., 257, 263-265, (2004) - Papier régulier
⋄ Failure analysis of a cascade laser structure by electrostatic force microscopy M. Azize, P. Girard, M. Teisseire, A. Baranov and A. Joullie Journal of Vaccum Science Technology B, 21(5), 10.1116/1.1609478, (2003) - Article de conférence
⋄ Realization of wave-guiding epitaxial GaN layers grown on silicon by low-pressure metalorganic vapor phase epitaxy H.P.D. Schenk, E. Feltin, M. Laügt, O. Tottereau, P. Vennéguès, and E. Doghèche Appl. Phys. Lett., 83, 5139, (2003) - Papier régulier
⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111) F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont Appl. Phys. Lett., 82(9), 1386, (2003) - Papier régulier
⋄ Residual donors in wurtzite GaN homoepitaxial layers and heterostructures G. Neu, M. Teisseire-Doninelli, C. Morhain, F. Semond, N. Grandjean, B. Beaumont, E. Frayssinet, W. Knap, A. M. Witowski, M. L. Sadowski, M. Leszczynski, P. Prystawko Phys. Stat. Sol. (b), 235, 20, (2002) - Article de conférence
⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond J. Appl. Phys., 94, 6499, (2003) - Papier régulier
⋄ Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy H.P.D. Schenk, P. Vennéguès, O. Tottereau, T. Riemann, and J. Christen J. Cryst. Growth, 258, 232, (2003) - Papier régulier
⋄ Engineering of an Insulating Buffer and Use of AlN interlayers: two optimisations for AlGaN-GaN HEMT-like structures Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, E.T. Palacios, F. Calle, M. Leroux Phys. Stat. Sol. (a), 195, No. 1, 93, (2003) - Article de conférence
⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies Phys. Rev. B, 68(15), 153313, (2003) - Papier régulier
⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111) F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie Jpn. J. Appl. Phys, 41(10B), L1140-2, (2002) - Papier régulier
⋄ Vertical cavity InGaN LEDs grown by MOVPE P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart Phys. Stat. Sol. (a), 192, 335, (2002) - Article de conférence
⋄ In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy H.P.D. Schenk, P. De Mierry, P. Vennéguès, O. Tottereau, M. Laügt, E. Feltin, M. Vaille, B. Beaumont, P. Gibart, S. Fernández, and F. Calle Appl. Phys. Lett., 80, 174, (2002) - Papier régulier
⋄ Donor spectroscopy in wurtzite GaN heterostructures G. Neu, M. Teisseire-Doninelli, C. Morhain Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171, 19, (2001) - Article de conférence
⋄ Evidence for alloy formation in dilute GaAs:N compounds E. Tournié, G. Neu, M. Teisseire, M.A. Pinault, M. Laügt Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171, 27, (2002) - Article de conférence
⋄ Photoluminescence of GaN microcrystallites prepared by a new solvothermal process C. Collado, G. Goglio, G. Demazeau, A.S. Barriere, L. Hirsch, M. Leroux Mat. Res. Bull., 37, 841, (2002) -
⋄ Silicon effect on GaN surface morphology Z. Benzarti, I. Halidou, O. Tottereau, T. Boufaden, B. El Jani Microelectronics Journal, 33(11), 995-998, (2002) - …
⋄ Modelling and spectroscopy of GaN microcavities N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies Phys. Stat. Sol. (a), 190, 187, (2002) - Article de conférence
⋄ Atomic force microscopy study of the polymer growth in a polymer stabilized liquid crystal H. Guillard, P. Sixou, O. Tottereau Polym. Adv. Technol., 13, 491, (2002) - …
⋄ Self compensation of the phosphorus acceptor in ZnSe D. Seghier, H. Gislasson, C. Morhain, M. Teisseire, E. Tournié, G. Neu, J.P. Faurie Phys. Stat. Sol. (b), 229, 251, (2002) - …
⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies Phys. Stat. Sol. (a), 192(1), 139-143, (2002) - …
⋄ Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN H.P.D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart Appl. Phys. Lett., 75, 2587, (2002) - Papier régulier
⋄ Full Si wafer conversion into bulk 3C-SiC A. Leycuras, O. Tottereau, P. Vicente, L. Falkovsky, P. Girard, J. Camassel Mat. Sci. For., 389-393, 147, (2002) - …
⋄ Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers C. Morhain, M. Teisseire, S. Vézian, F. Vigué, F. Raymond, P. Lorenzini, J. Guion, G. Neu, J.P. Faurie Phys. Stat. Sol. (b), 229, 881, (2002) - …
⋄ 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie Phys. Stat. Sol. (b), 229, 931, (2002) - Article de conférence
⋄ MBE-grown high-quality (Al,Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog Semicond. Sci. Tech., 16, 913, (2001) - Papier régulier
⋄ Potentialities of GaN-based microcanivities grown on silicon substrates N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson Phys. Stat. Sol. (a), 188, 519, (2001) - …
⋄ Investigation of the P-As substitution at GaAs/GaInP interfaces by photoluminescence under pressure A. Aurand, J. Leymarie, A. Vasson, M. Mesrine, J. Massies, M. Leroux Phys. Rev. B, 89, 3775, (2001) - Papier régulier
⋄ High quality distributed Bragg refelctors based on AlxGa1-xN/GaN multilayers grown by MBE S. Fernandez, F.B. Naranjo, F. Calle, M.A. Sanchez-Garcia, E. Calleja, P. Vennéguès, A. Trampert, K.H. Ploog Appl. Phys. Lett., 79, 2136, (2001) - Papier régulier
⋄ Modeling of absorption and emission spectra of InGaN layers grown by MBE L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Milhailovic, N. Grandjean, M. Leroux, J. Massies Mat. Sci. Eng. B, 82, 71, (2001) - …
⋄ Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie J. Appl. Phys., 90, 5115, (2001) - Papier régulier
⋄ Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors G. Neu, M. Teisseire, P. Lemasson, H. Lahrèche, N. Grandjean, F. Semond, B. Beaumont, I. Grzegory, S. Porowski, R. Triboulet Physica B, 302-303, 39, (2001) - …
⋄ Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy E. Feltin, S. Dalmasso, P. De Mierry, B. Beaumont, H. Lahrèche, A. Bouille, P. Gibart Jpn. J. Appl. Phys, 40, L738, (2001) - …
⋄ Study of (Al,Ga)N Bragg-mirrors grown on Al2O3(0001) and Si(111) by MOVPE H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. De Mierry, P. Gibart, S. Fernandez, and F. Calle Phys. Stat. Sol. (a), 188, 899, (2001) - Article de conférence
⋄ Epitaxial Lateral Overgrowth of GaN on Silicon (111) E. Feltin, B. Beaumont, P. Vennéguès, T. Riemann, J. Christen, J.P. Faurie, P. Gibart Phys. Stat. Sol. (a), 188, 733, (2001) - Article de conférence
⋄ Crack-free thick GaN layers on silicon(111) by MOVPE E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, M. Leroux, P. Gibart Phys. Stat. Sol. (a), 188, 531, (2001) - Article de conférence
⋄ Epitaxial Lateral overgrowth of GaN B. Beaumont, P. Vennéguès, P. Gibart Phys. Stat. Sol. (b), 227, 1-43, (2001) - Papier régulier
⋄ Stress control in GaN grown on silicon(111) by MOPVE E. Feltin, B. Beaumont, M. Laügt, P. De Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart Appl. Phys. Lett., 79, 3220, (2001) - Papier régulier
⋄ Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie Appl. Phys. Lett., 79, 194, (2001) - Papier régulier
⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz Mat. Sci. Eng. B, 82, 256, (2001) - …
⋄ Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers H.P.D. Schenk, M. Leroux, P. De Mierry, M. Laügt, F. Omnès, and P. Gibart Mat. Sci. Eng. B, 82, 163, (2001) - Article de conférence
⋄ Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlG distributed Bragg reflector on Si(111) F. Semond, N. Antoine-Vincent, N. Schnell, G. Malpuech, M. Leroux, J. Massies, P. Disseix, J. Leymarie, A. Vasson Phys. Stat. Sol. (a), 183, 163, (2001) - …
⋄ Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures L. Siozade, J. Leymarie, P. Disseix, A. Vasson, M. Mihailovic, N. Grandjean, M. Leroux, J. Massies Sol. Stat. Comm., 115, 575, (2000) - …
⋄ Optmisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111) H. Lahrèche, P. Vennéguès, O. Tottereau, M. Laügt, P. Lorenzini, M. Leroux, B. Beaumont, P. Gibart J. Cryst. Growth, 217, 13, (2000) - Papier régulier
⋄ GaN-AlGaN heterojunction field-effect-transistors over bulk GaN substrates M.Asif Khan, J.W. Yang, W. Knap, E. Frayssinet, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, G. Gaska, M.S. Shur, B. Beaumont, M. Teisseire, G. Neu Appl. Phys. Lett., 76, 3807, (2000) - Papier régulier
⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies Phys. Stat. Sol. (a), 180, 127, (2000) - …
⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald Phys. Stat. Sol. (a), 178, 101, (2000) - …
⋄ Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry L. Siozade, S. Colard, M. Milhzilovic, J. Leymarie, A. Vasson, N. Grandjean, M. Leroux, J. Massies, Jpn. J. Appl. Phys, 39, 20, (2000) - Papier régulier
⋄ Photoluminescence of GaAs grown by metalorganic molecular beam epitaxy in space ultra-vacuum A. Freundlich, C. Horton, M.F. Vilela, M. Sterling, A. Ignatiev, G. Neu, M. Teisseire J. Cryst. Growth, 209, 435, (2000) - …
⋄ Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN G. Neu, M. Teisseire, N. Grandjean, H. Lahrèche, B. Beaumont, I. Grzegory, S. Porowski, P. Tronc Proc. Int. Conf. on the Physics of Semiconductors, , , (2000) - …
⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz Thin Solid Films, 380, 195, (2000) - …
⋄ Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers E. Tournié, G. Neu, M. Teisseire, J.P. Faurie, H. Pelletier, B. Theys Phys. Rev. B, 62(19), 12868, (2000) - Papier régulier
⋄ Luminescence and absorption in InGaN epitaxial layers and the Van Roosbroeck-Shockley relation H.P.D. Schenk, M. Leroux, and P. De Mierry J. Appl. Phys., 88, 1525, (2000) - Papier régulier
⋄ Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teisseire, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht J. Appl. Phys., 88, 183, (2000) - Papier régulier
⋄ High quality GaN on Si(111) using (AlN/GaN)x superlattice and maskless ELO H. Lahrèche, V. Bousquet, O. Tottereau, P. Vennéguès, B. Beaumont, P. Gibart Diamond and Related Materials, 9, 452, (2000) - …
⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau Appl. Phys. Lett., 77, 2189, (2000) - Papier régulier
⋄ Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films M. Benaïssa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai Appl. Phys. Lett., 77, 2115, (2000) - Papier régulier
⋄ Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homo-epitayers G. Neu, M. Teisseire, E. Frayssinet, W. Knap, M.L. Sadowski, A.M. Witowski, K. Pakula, M. Leszczynski, P. Prystawko Appl. Phys. Lett., 77, 1348, (2000) - Papier régulier
⋄ Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular- beam epitaxy G. Neu, E. Tournié, C. Morhain, M. Teisseire, J.P. Faurie Phys. Rev. B, 61, 15789, (2000) - Papier régulier
⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111) S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès Phys. Rev. B, 61, 7618, (2000) - Papier régulier
⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie Phys. Stat. Sol. (a), 180, 363, (2000) - …
⋄ Molecular beam epitaxy of ZnBeSe : influence of the substrate nature and epilayer properties C. Chauvet, E. Tournié, P. Vennéguès, J.P. Faurie Journal Electron. Mater., 29(6), 883, (2000) - …
⋄ Hydrogen/deuterium : a probe to investigate carrier-compensation in ZnSe:N E. Tournié, H. Pelletier, G. Neu, B. Theys, A. Lusson, M. Teisseire, C. Chauvet, J.P. Faurie J. Cryst. Growth, 214/215, 507, (2000) - …
⋄ Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots N. Grandjean, B. Damilano, J. Massies S. Dalmasso Sol. Stat. Comm., 113, 495, (2000) - Papier régulier
⋄ Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart J. Appl. Phys., 87, 577, (2000) - Papier régulier

⋄ DUV LEDs based on AlGaN Quantum Dots

⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping

⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

⋄ Full InGaN red light emitting diodes

⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers

⋄ Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure

⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

⋄ Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers

⋄ Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures

⋄ Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

⋄ Loss analysis in nitride deep ultraviolet planar cavity

⋄ UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range

⋄ Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)

⋄ AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate

⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation

⋄ Ion-induced interdiffusion of surface GaN quantum dots

⋄ Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

⋄ Influence of the heterostructure design on the optical properties of GaNand Al0.1Ga0.9N quantum dots for ultraviolet emission

⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs

⋄ Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing3C-SiC membranes

⋄ III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

⋄ On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiCgrowth direction

⋄ Ultraviolet light emitting diodes using III-N quantum dots

⋄ Defect blocking via laterally induced growthof semipolar (1 0 1 1) GaN on patternedsubstrates

⋄ High temperature electrical transport study of Si-doped AlN

⋄ Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality

⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots

⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

⋄ Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates

⋄ Improved performance of GaInNAs solar cell after UV-activated hydrogenation

⋄ Selective passivation of nitrogen clusters and impurities in photovoltaic GaInNAs solar cells

⋄ Improved performance in GaInNAs solar cells by hydrogen passivation

⋄ Photoluminescence study of Be-acceptors in GaInNAs epilayers

⋄ Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

⋄ Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder

⋄ Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes

⋄ Polarity Control in Group-III Nitrides beyond Pragmatism

⋄ Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

⋄ Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire

⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

⋄ Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity

⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy

⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

⋄ Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

⋄ Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

⋄ Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

⋄ Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate

⋄ Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers

⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect

⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties

⋄ Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

⋄ Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

⋄ Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy

⋄ Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

⋄ GaN high electron mobility transistors on Silicon substrates with MBE/PVD AlN seed layers

⋄ Magnetotransport in a two-subband AlGaN/GaN heterostructure in the presence of mixed disorder

⋄ AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

⋄ Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature

⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment

⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

⋄ Monolithic white light emitting diodes using a (Ga,In)N-based light converter

⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films

⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

⋄ Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

⋄ Quantitative determination of compositional profiles using HAADF image simulations

⋄ Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties

⋄ On the growth of Zn1–xMnxO thin films by plasma-assisted MBE

⋄ Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

⋄ Room temperature generation of THz radiation in GaN quantum wells structures

⋄ Stress distribution of 12 μm thick crack free continuous GaN on patterned Si (110) substrate

⋄ Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

⋄ Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

⋄ Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates