⋄ Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates
M. Takiguchi, S. Sergent, B. Damilano, S. Vézian, S. Chenot, N. Yazigi, P. Heidt, T. Tsuchizawa, T. Yoda, H. Sumikura, A. Shinya, and M. Notomi,
ACS Photonics, 11,
789, (2024)
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⋄ Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion
B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, and M. Vladimirova
J. Appl. Phys., 135,
095702, (2024)
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⋄ Descriptor engineering in machine learning regression of electronic structure properties for 2D materials
M.T. Dau, M. Al Khalfioui, A. Michon, A. Reserbat-Plantey, S. Vézian and P. Boucaud
Sci Rep., 13,
5426, (2023)
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⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN
Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
APL Materials, 11,
031105, (2023)
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⋄ Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN
J. D. Miller, H. J. Trodahl1, M. Al Khalfioui, S. Vézian, and B. J. Ruck
Appl. Phys. Lett., 122,
092402, (2023)
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⋄ Enhanced Sm spin projection in GdxSm1−xN
J. D. Miller, J. F. McNulty, B. J. Ruck, M. Al Khalfioui, S. Vézian, M. Suzuki, H. Osawa, N. Kawamura, and H. J. Trodahl
Phys. Rev. B, 106,
174432, (2022)
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⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
J. Cryst. Growth, 593,
126779, (2022)
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⋄ Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence
B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, and B. Gil,
J. Appl. Phys., 132,
035302, (2022)
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⋄ Porous Nitride LEDs
Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva
ACS Photonics, 9,
1256, (2022)
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⋄ Light Polarization in Tunnel Junction Injected UV Light-Emitting Diodes
Jean-Yves Duboz, Victor Fan Arcara, Cynthia Kessaci, Stéphane Vézian, and Benjamin Damilano,
Phys. Stat. Sol. A, 219,
2200055, (2022)
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⋄ Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy
B Damilano, S Vézian, J Brault, P Ruterana, B Gil and M Tchernycheva
Nanotechnology, 34,
245602, (2022)
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⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188,
108210, (2022)
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⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces
Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet
Nat. Commun, 12,
3631, (2021)
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⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires
K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0,
0, (2021)
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⋄ Bandwidth-unlimited polarization-maintaining metasurfaces
Q. Song, S. Khadir, S. Vézian, B. Damilano, P. D. Mierry, S. Chenot, V. Brandli and P. Genevet
Sci. Adv., 7(5),
eabe1112, (2021)
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⋄ Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
T.H. Ngo, R. Comyn, S. Chenot, J. Brault, B. Damilano, S. Vézian, E. Frayssinet, F. Cozette, C. Rodriguez, N. Defrance, F. Lecourt, N. Labat, H. Maher and Y. Cordier
Semicond. Sci. Tech., 36,
024001, (2020)
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⋄ Magnetoresistance of epitaxial GdN films
T. Maity, H. J. Trodahl, S. Granville, S. Vézian, F. Natali, and B. J. Ruck
J. Appl. Phys., 128,
213901, (2020)
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⋄ Printing polarization and phase at the optical diffraction limit: near-and far-field optical encryption
Q. Song, S. Khadir, S. Vézian, B. Damilano, P. de Mierry, S. Chenot, V. Brandli, R. Laberdesque, B. Wattellier and P. Genevet
Nanophotonics, 10(1),
697, (2020)
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⋄ InGaN islands and thin films grown on epitaxial graphene
C. Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, A. Dussaigne and B. Hyot
Nanotechnology, 31,
405601, (2020)
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⋄ Lasing up to 380 K in a sublimated GaN nanowire
S. Sergent, B. Damilano, S. Vézian, S. Chenot, T. Tsuchizawa, and M. Notomi
Appl. Phys. Lett., 116,
223101, (2020)
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⋄ Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, D. Cooper
Nanotechnology, 31,
465706, (2020)
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⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces
Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet
Nat. Commun, 11,
2651, (2020)
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⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields
Sci Rep., 10,
5642, (2020)
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⋄ Metasurface orbital angular momentum holography
H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet
Nat. Commun, 10,
2986, (2019)
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⋄ Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes
V. Fan Arcara; B. Damilano; G. Feuillet; S. Vézian; K. Ayadi; S. Chenot; J.-Y. Duboz
J. Appl. Phys., 126,
224503, (2019)
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⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials
P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5,
52, (2019)
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⋄ Subliming GaN into ordered nanowire arrays for ultraviolet and visible nanophotonics
S. Sergent, B. Damilano, S. Vézian, S. Chenot, M. Takiguchi, T. Tsuchizawa, H. Taniyama, M. Notomi
ACS Photonics, 6,12,
3321-3330, (2019)
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⋄ Metasurfaces Orbital Angular Momentum Holography
H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet
Nat. Commun, 10,
2986, (2019)
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⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces
G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet
Adv. Opt. Mater., 7(14),
1801271, (2019)
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⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12,
045007, (2019)
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⋄ Optimization and uncertainty quantification of gradient index metasurfaces
N. Schmitt, N. Georg, G. Brière, D. Loukrezis, S. Héron, S. Lanteri, C. Klitis, M. Sorel, U. Rômer, H. De Gersem, S. Vézian, and P. Genevet
Opt. Mater. Express, 9,
892-910, (2019)
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⋄ Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN
C.-M. Lee, J. Schacht, H. Warring, H. J. Trodahl, B. J. Ruck, S. Vézian, N. Gaston, and F. Natali
J. Appl. Phys., 123,
115106, (2018)
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⋄ Electron transport in heavily doped GdN
T. Maity, H.J. Trodahl, F. Natali, and B.J. Ruck and S. Vézian
Phys. Rev. Materials, 2,
014405, (2018)
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⋄ Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate
B. Damilano, S. Vézian, and J. Massies
Phys. Stat. Sol. B, 255(5),
1700392, (2017)
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⋄ Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation
B. Damilano, S. Vézian, and J. Massies
Opt. Express, 25,
33243, (2017)
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⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films
J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali
MRS Advances, 2,
165, (2017)
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⋄ Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy
F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck
MRS Advances, 2,
189, (2017)
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⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation
B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies
J. Cryst. Growth, 477,
262, (2017)
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⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN
J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali
Cryst. Growth Des. , 16,
6454, (2016)
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⋄ Superconductivity in the ferromagnetic semiconductor samarium nitride
E. -M. Anton, S. Granville, A. Engel, S. V. Chong, M. Governale, U. Zülicke, A. G. Moghaddam, H. J. Trodahl, F. Natali, S. Vézian, and B. J. Ruck
Phys. Rev. B, 94,
024106, (2016)
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⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth, 450,
22, (2016)
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⋄ Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication
B. Damilano, S. Vézian, J. Brault, B. Alloing, and J. Massies
Nano Lett., 16,
1863, (2016)
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⋄ Highly resistive epitaxial Mg-doped GdN thin films
C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett., 106,
022401, (2015)
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⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers
R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For., 821-823,
1003, (2015)
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⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment
M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski
J. Cryst. Growth, 157,
404, (2014)
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⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104,
071912, (2014)
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⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films
F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404,
146-151, (2014)
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⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113,
203501, (2013)
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⋄ Role of magnetic polarons in ferromagnetic GdN
F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87,
035202, (2013)
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⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD
A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller,
T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742,
117, (2013)
- Article de conférence
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⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349,
27, (2012)
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⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)
A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720,
625, (2012)
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⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720,
621, (2012)
- Article de conférence
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⋄ Fabrication and growth of GaN-based micro and nanostructures
B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zúñiga-Pérez
Int. J. of Nanotechnology, 9,
412-427, (2012)
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⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)
A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier,
A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711,
253, (2012)
- Article de conférence
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⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain
A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9,
175-178, (2011)
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⋄ GaN nanocolumns on sapphire by ammonia-MBE: From self-organizedto site-controlled growth
S. Vézian, B. Alloing and J. Zúñiga-Pérez
J. Cryst. Growth, 323,
326, (2011)
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⋄ On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy
B. Alloing, S. Vézian, O. Tottereau, P. Vennéguès, E. Beraudo, and J. Zúñiga-Pérez
Appl. Phys. Lett., 98,
011914, (2011)
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⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett., 97,
171909, (2010)
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⋄ AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?
A. Le Louarn, S. Vézian, F. Semond and J. Massies
J. Cryst. Growth, 311,
3278, (2009)
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⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B, 79,
035328, (2009)
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⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068,
51-56, (2008)
- Article de conférence
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⋄ Layer-by-layer epitaxial growth of Mg on GaN(0001)
S. Pezzagna, S. Vézian, J. Brault, and J. Massies
Appl. Phys. Lett., 92,
23111, (2008)
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⋄ Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source
S. Vézian, A. Le Louarn and J. Massies
J. Cryst. Growth, 303,
419, (2007)
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⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells
F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71,
75311, (2005)
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⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36,
659, (2004)
- Article de conférence
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⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride
S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science, 234,
445, (2004)
- Article de conférence
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⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)
S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,
125329, (2004)
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⋄ Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects
C. Morhain, M. Teisseire-Doninelli, S. Vézian, C. Deparis, P. Lorenzini, F. Raymond, J. Guion, G. Neu
Phys. Stat. Sol. (b), 241 (3),
631, (2004)
- Article de conférence
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⋄ Origins of GaN(0001) Surface Reconstructions
S. Vézian, F. Semond, J. Massies, D. W. Bullock, Z. Ding, and P. M. Thibado
Surf. Sci., 541,
242, (2003)
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⋄ 2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire
F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie
Phys. Stat. Sol. (b), 229,
931, (2002)
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⋄ Spectroscopy of excitons, bound excitons and impurities in h-ZnO epilayers
C. Morhain, M. Teisseire, S. Vézian, F. Vigué, F. Raymond, P. Lorenzini, J. Guion, G. Neu, J.P. Faurie
Phys. Stat. Sol. (b), 229,
881, (2002)
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⋄ InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties
B. Damilano, N. Grandjean, S. Vézian, J. Massies
J. Cryst. Growth, 227/228,
466, (2001)
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⋄ Defect characterization in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates
F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.P. Faurie
Appl. Phys. Lett., 79,
194, (2001)
- Papier régulier
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⋄ Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire
F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.P. Faurie
J. Appl. Phys., 90,
5115, (2001)
- Papier régulier
|
⋄ Surface morphology of GaN grown by molecular beam epitaxy
S. Vézian, J. Massies, F. Semond, N. Grandjean
Mat. Sci. Eng. B, 82,
56, (2001)
- …
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⋄ In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)
S. Vézian, J Massies, F. Semond, N. Grandjean, P. Vennéguès
Phys. Rev. B, 61,
7618, (2000)
- Papier régulier
|
⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau
Appl. Phys. Lett., 77,
2189, (2000)
- Papier régulier
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Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
