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11 publications classées par date - Critères de recherche: Tendille


⋄ Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

N. Al Taradeh, E. Frayssinet, C. Rodriguez, F. Morancho, C. Sonneville, L.-V. Phung, A. Soltani, F. Tendille, Y. Cordier, H. Maher
Energies, 12, 4241, (2021) - Papier régulier
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⋄ Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

T.H. Ngo, R. Comyn, E. Frayssinet, H. Chauveau, S. Chenot, B. Damilano, F. Tendille, B. Beaumont, J.-P. Faurie, N. Nahas, Y. Cordier
J. Cryst. Growth, 552, 125911, (2020) - Papier régulier
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⋄ Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers

P. Henning , P. Horenburg, H. Bremers, U. Rossow, F. Tendille, P. Vennégués , P. de Mierry, J. Zúñiga-Pérez , and A. Hangleiter
Appl. Phys. Lett., 115, 202103, (2019) - Papier régulier
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⋄ Ultraviolet light emitting diodes using III-N quantum dots

J. Brault, S. Matta, T.H. Ngo, D. Rosales, M. Leroux, B. Damilano, M. Al Khalfioui, F. Tendille, S. Chenot, P. De Mierry, J. Massies, B. Gil
Mat Sci Semicon Proc, 55, 95, (2016) - Papier invité
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⋄ Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

A. Shkurmanov, C. Sturm, J. Lenzner, G. Feuillet, F. Tendille, P. De Mierry, and M. Grundmann
AIP Adv, 6, 95013, (2016) - Papier régulier

⋄ Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

X. S. Nguyen, H. W. Hou, P. De Mierry, P. Vennéguès, F. Tendille, A. R. Arehart, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua
Phys. Stat. Sol. B, 253(11), 2225-2229, (2016) - Papier régulier

⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality

F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry
Appl. Phys. Lett., 109, 082101, (2016) - Papier régulier

⋄ Green emission from semipolar InGaN quantum wells grown on low-defect (11-22) GaN templates fabricated on patterned r-sapphire

P. de Mierry, L. Kappei, F. Tendille, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 253, 105-111, (2016) - Papier régulier

⋄ Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

P. Vennéguès, F. Tendille and P. De Mierry
J. Phys. D: Appl. Phys., 48, 325103, (2015) - Papier régulier

⋄ Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

F. Tendille, M. Hugues, P. Vennéguès, M. Teisseire and P. De Mierry
Semicond. Sci. Tech., 30, 065001, (2015) - Papier régulier

⋄ Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

F. Tendille, P. De Mierry, P. Vennéguès, S. Chenot, M. Teisseire
J. Cryst. Growth, 404, 177-183, (2014) - Papier régulier