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11 publications classées par date - Critères de recherche: Pinault

⋄ From GaAs:N to oversaturated GaAsN : Analysis of the band-gap reduction

T. Talierco, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.A. Pinault, M. Laügt, and E. Tournié
Phys. Rev. B, 69, 073303, (2004) - Papier régulier
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⋄ Isoelecrtonic traps in heavily doped GaAs:(In,N)

R. Intartaglia, T. Talierco, P. Valvin, B. Gil, T. Bretagnon, P. Lefebvre, M.A. Pinault, E. Tournié
Phys. Rev. B, 68, 235202, (2003) - Papier régulier

⋄ Annealing effects on the crystal structure of GaInNAs quantum wells with large in and N content grown by molecular beam epitaxy

A. Hierro, J.M. Ulloa, J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, A. Guzman, J.L. Sanchez-Rojas, E. Calleja
J. Appl. Phys., 94, 2319, (2003) - Papier régulier

⋄ Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells

J.M. Chauveau, A. Trampert, K.H. Ploog, M.A. Pinault, E. Tournié
Appl. Phys. Lett., 82, 3451, (2003) - Papier régulier
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⋄ Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

J.M. Chauveau, A. Trampert, M.A. Pinault, E. Tournié, K. Du, K.H. Ploog
J. Cryst. Growth, 251, 383, (2003) - Papier régulier

⋄ GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 mm

E. Tournié, M.A. Pinault, M. Laügt, J.M. Chauveau, A. Trampert, K.H. Ploog
Appl. Phys. Lett., 82, 1845, (2003) - Papier régulier

⋄ Photoluminescence spectroscopie of Ga(In)NAs quantum wells for emission at 1.5 µm

M.A Pinault, E. Tournié
Solid State Electronics, 47, 477, (2003) - Papier régulier

⋄ Evidence for alloy formation in dilute GaAs:N compounds

E. Tournié, G. Neu, M. Teisseire, M.A. Pinault, M. Laügt
Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171, 27, (2002) - Article de conférence

⋄ Influence of alloy stability on the photoluminescence properties of GaAs//GaAs quantum wells grown by molecular-beam epitaxy

M.A. Pinault, E. Tournié
Appl. Phys. Lett., 79, 3404, (2001) - Papier régulier

⋄ On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells

M.A. Pinault, E. Tournié
Appl. Phys. Lett., 78(11), 1562, (2001) - Papier régulier

⋄ Long-wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

E. Tournié, M.A. Pinault, S. Vézian, J. Massies, O. Tottereau
Appl. Phys. Lett., 77, 2189, (2000) - Papier régulier