⋄ Engineering 2D Material Exciton Line Shape with Graphene h-BN Encapsulation
Steffi Y. Woo, Fuhui Shao, Ashish Arora, Robert Schneider, Nianjheng Wu, Andrew J. Mayne, Ching-Hwa Ho, Mauro Och, Cecilia Mattevi, Antoine Reserbat-Plantey, Álvaro Moreno, Hanan Herzig Sheinfux, Kenji Watanabe, Takashi Taniguchi, Steffen Michaelis de Vasconcellos, Frank H. L. Koppens, Zhichuan Niu, Odile Stéphan, Mathieu Kociak, F. Javier García de Abajo, Rudolf Bratschitsch, Andrea Konečná, and Luiz H. G. Tizei
Nano Lett., 24,
11, (2024)
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⋄ GaN/AlN bilayers for integrated photonics
Nagesh Bhat, Maksym Gromovyi, Moustafa El Kurdi, Xavier Checoury, Benjamin Damilano, AND Philippe Boucaud
Opt. Mater. Express, 14,
792, (2024)
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⋄ Fabrication strategies of flexible light sources based on micro/nano III-nitrideLEDs
Julien Bosch, Christophe Durand, Blandine Alloing, Maria Tchernycheva
Choisir un journal..., ,
, (2024)
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⋄ Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings
Alexandra Ibanez, Nikita Nikitskiy, Aly Zaiter, Pierre Valvin, Wilfried Desrat, Thomas Cohen, M. Ajmal Khan, Guillaume Cassabois, Hideki Hirayama, Patrice Genevet, Julien Brault, Bernard Gil
J. Appl. Phys., 134,
193103, (2023)
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⋄ Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography
Samba Ndiaye, Caroline Elias, Aïssatou Diagne, Hélène Rotella, Frederic Georgi, Maxime Hugues, Yvon Cordier, Francois Vurpillot, Lorenzo Rigutti
Appl. Phys. Lett., 123,
162102, (2023)
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⋄ Large area MoS2 films grown on sapphire and GaN substrates by pulsed laser deposition
Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová-Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo
Nanomaterials, 13,
2837, (2023)
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⋄ Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN
F. Giannazzo, S.E. Panasci, E. Schiliro, G. Greco, F. Roccaforte, G. Sfuncia, G. Nicotra, M. Cannas, S. Agnello, E. Frayssinet, Y. Cordier, A. Michon, A. Koos, B. Pecz
Appl. Surf. Sci., 631,
157513, (2023)
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⋄ Silicon diffusion in AlN
V. Bonito Oliva, D. Mangelinck,S. Hagedorn, H. Bracht, K. Irmscher, C. Hartmann,
P. Vennéguès, and M. Albrecht
J. Appl. Phys., 134,
095103, (2023)
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⋄ (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission
Aly Zaiter, Nikita Nikitskiy, Maud Nemoz, Phuong Vuong, Vishnu Ottapilakkal, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Nanomaterials, 13,
2404, (2023)
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⋄ High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes
Kilian Baril; Pierre-Marie Coulon; Mrad Mrad; Nabil Labchir; Guy Feuillet; Matthew Charles;
Cécile Gourgon; Philippe Vennéguès; Jesus Zuniga-Perez; Blandine Alloing
J. Appl. Phys., 133,
245702, (2023)
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⋄ Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale
Maya Wehbe, Matthew Charles, Kilian Baril, Blandine Alloing, Daniel Pino Munoz, Nabil Labchir, Jesús Zuniga-Perez, Carsten Detlefs, Can Yildirimf and Patrice Gergaud
J. Appl. Cryst., 56,
643, (2023)
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⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Giuseppe Greco, Patrick Fiorenza, Emanuela Schiliro, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte
Microelectron Eng, 276,
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⋄ Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate
Marie Lesecq, Yassine Fouzi, Ali Abboud, Nicolas Defrance, François Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude De Jaeger, Eric Frayssinet, Yvon Cordier
Microelectron Eng, 276,
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⋄ Post-2000 Nonlinear Optical Materials and Measurements: Data Tables and Best Practices
Nathalie Vermeulen, Daniel Espinosa, Adam Ball, John Ballato, Philippe Boucaud, Georges Boudebs, Cecília L. A. V. Campos, Peter Dragic, Anderson S. L. Gomes, Mikko J. Huttunen, Nathaniel Kinsey, Rich Mildren, Dragomir Neshev, Lázaro Padilha, Minhao Pu, Ray Secondo, Eiji Tokunaga, Dmitry Turchinovich, Jingshi Yan, Kresten Yvind, Ksenia Dolgaleva, and Eric W. Van Stryland
J. Phys. Photonics, 5,
035001, (2023)
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⋄ Engineering epitaxy and condensation: Fabrication of Ge nanolayers, mechanism and applications
Mohamed Bouabdellaoui, Monica Bollani, Marco Salvalaglio, Elie Assaf, Luc Favre ,
Mathieu Abel, Antoine Ronda, Olivier Gourhant, Fabien Deprat, Christophe Duluard,
Anne-Flore Mallet, Philippe Vennegues, Jean-Noel Aqua, Isabelle Berbezier
Appl. Surf. Sci., 630,
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⋄ InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC
Julien Bosch, Lucie Valera, Chiara Mastropasqua, Adrien Michon, Maud Nemoz, Marc Portail, Jesús Zúñiga-Pérez, Maria Tchernycheva, Blandine Alloing, Christophe Durand
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⋄ Universal Active Metasurfaces for Ultimate Wavefront Molding by Manipulating the Reflection Singularities
Mahmoud Elsawy, Christina Kyrou, Elena Mikheeva, Rémi Colom, Jean-Yves Duboz,Khosro Zangeneh Kamali, Stéphane Lanteri, Dragomir Neshev, and Patrice Genevet
Laser Photonics Rev., 17,
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⋄ Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode
Atse Julien Eric N'Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong-Viet Phung, Frederic Morancho, Hassan Maher, Dominique Planson
Crystals, 13,
713, (2023)
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⋄ Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN
Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
APL Materials, 11,
031105, (2023)
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⋄ Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy
Maroun Dagher, Camille Sonneville, Georges Brémond, Dominique Planson, Eric Frayssinet, Yvon Cordier, Helge Haas, Mohammed Reda Iretki, Julien Buckley, Vishwajeet Maurya, Matthew Charles, Jean-Marie Bluet
Phys. Stat. Sol. A, 20,
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⋄ Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy
Thomas Kaltsounis, Helge Haas, Matthieu Lafossas, Simona Torrengo, Vishwajeet Maurya, Julien Buckley, Denis Mariolle, Marc Veillerot, Alain Gueugnot, Laurent Mendizabal, Yvon Cordier, Matthew Charles
Microelectron Eng, 273,
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⋄ Artificial Optoelectronic Synapse with Nanolayered GaN/AlN Periodic Structure for Neuromorphic Computing
Xiayang Hua, Jiyuan Zheng, Xu Han, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Lin Gan, Mohamed Al Khalfioui, Julien Brault, Lai Wang
ACS Appl. Nano Mater., 6,
8461, (2023)
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⋄ Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas
Max Meunier, John J. H. Eng, Zhao Mu, Sebastien Chenot, Virginie Brändli, Philippe de Mierry,
Weibo Gao and Jesús Zúñiga-Pérez
Nanophotonics, 12 (8),
1405-1419, (2023)
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⋄ Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in Vertical GaN-on-GaN Schottky Barrier Diodes
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Hervé Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Yvon Cordier and Dominique Planson
Micro and Nanostructures, 172,
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⋄ Exploiting extraordinary topological optical forces at bound states in the continuum
Haoye Qin, Yuzhi Shi, Zengping Su , Guodan Wei, Zhanshan Wang, Xinbin Cheng, Ai Qun Liu, Patrice Genevet, Qinghua Song
Sci. Adv., 8,
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⋄ Fabrication, and DC and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes
Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude De Jaeger
JVST B, 41,
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⋄ Interplay of Purcell effect and extraction efficiency in CsPbBr3 quantum dots coupled to Mie resonators
Ruihua He, Max Meunier, Zhaogang Dong, Hongbing Cai, Weibo Gao, Jesus Zuniga-Perez and Xiaogang Liu
Nanoscale Adv., 15,
1652, (2022)
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⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth
M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès
Crystals, 12,
1605, (2022)
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⋄ Ultra-broadband photoconductivity in twisted graphene heterostructures with large responsivity
H. Agarwal, K. Nowakowski, A. Forrer, A. Principi, R. Bertini, S. Batlle-Porro, A. Reserbat-Plantey, P. Prasad, L. Vistoli, K. Watanabe, T. Taniguchi, A. Bachtold, G. Scalari, R. Krishna Kumar, F. H. L. Koppens
Nat. Photonics, 1,
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⋄ On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations
P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson,
F. Semond, G. Feuillet, and C. Cornet
J. Appl. Phys., 132,
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⋄ Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N’Dohi, Heré Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
Microelectronics J, 128,
105575, (2022)
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⋄ Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
J. Cryst. Growth, 593,
126779, (2022)
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⋄ Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE
Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing
Cryst. Growth Des., 22,
5206, (2022)
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⋄ Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence
B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, and B. Gil,
J. Appl. Phys., 132,
035302, (2022)
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⋄ Comparison of lasing characteristics of GaN microdisks with different structures
Hui Zi, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
J. Phys. D: Appl. Phys., 55,
355107, (2022)
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⋄ Low-loss GaN-on-insulator platform for integrated photonics
M. GROMOVYI, M. EL KURDI, X. CHECOURY, E. HERTH,F. TABATABA-VAKILI, N. BHAT, A. COURVILLE, F. SEMOND, AND P. BOUCAUD
Opt. Express, 30,
20737, (2022)
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⋄ Exciton ionization induced by intersubband absorption in nonpolar ZnO-ZnMgO quantum wells at room temperature
A. Jollivet, P. Quach, M. Tchernycheva, R. Ferreira, E. Di Russo, L. Rigutti, B. Vinter, N. le Biavan, D. Lefebvre, M. Hugues, J. M. Chauveau, and F. H. Julien
Phys. Rev. B, 105,
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⋄ Porous Nitride LEDs
Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano, and Maria Tchernycheva
ACS Photonics, 9,
1256, (2022)
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⋄ Influence of surface roughness on the lasing characteristics of optically-pumped thin-film GaN microdisks
Hui Zi, Yuk Fai Cheung,1 Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, and Hoi Wai Choi
Opt. Lett., 47,
1521, (2022)
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⋄ Vectorial metasurface holography
Qinghua Song, Xingsi Liu, Cheng-Wei Qiu, and Patrice Genevet
Appl. Phys. Rev., 9,
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⋄ Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/Sapphire template
Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub and Philippe Ferrandis
J. Appl. Phys., 131,
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⋄ Micro Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications
Atse Julien Eric N’Dohi, Camille Sonneville, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
AIP. Adv, 12,
025126, (2022)
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⋄ Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher and Yvon Cordier
Solid State Electronics, 188,
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⋄ Comparison of lasing characteristics of GaN microdisks with different structures
Hui Zi, Wai Yuen Fu, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond and Hoi Wai Choi,
J. Phys. D: Appl. Phys., 55,
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⋄ Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride
M. Zielinski, M. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062,
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⋄ Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material
M. Zielinski, M. Bussel, C. Moisson, H. Mank, S. Monooye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062,
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⋄ AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications
M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T. Huong Ngo, M.A. Daher, M. Zielinski, D. Alquier, J.C. De Jaeger and Y. Cordier
Mat. Sci. For., 1062,
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⋄ Oxygen Isotope Variations in Mg-rich Olivines from Type I Chondrules in Carbonaceous Chondrites
G. Libourel, K. Nagashima, M. Portail, A.N. Krot
Geochim. Cosmochim. Acta, 319,
73-93, (2022)
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⋄ A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
P. Quach, A. Jollivet, A. Babichev, N. Isac, M. Morassi, A. Lemaitre, P. A. Yunin, E. Frayssinet, P. de Mierry, M. Jeannin, A. Bousseksou, R. Colombelli, M. Tchernycheva, Y. Cordier, and F. H. Julien
Appl. Phys. Lett., 120,
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⋄ Metasurface-enhanced light detection and ranging technology
Renato Juliano Martins, Emil Marinov, M. Aziz Ben Youssef, Christina Kyrou, Mathilde Joubert, Constance Colmagro, Valentin Gâté, Colette Turbil, Pierre-Marie Coulon, Daniel Turover, Samira Khadir, Massimo Giudici, Charalambos Klitis, Marc Sorel & Patrice Genevet
Nat. Commun, 13,
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⋄ Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN
Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Materials, 15,
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⋄ Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics
Morteza Monavaria, Jiaming Xu, Michel Khoury, Feng Wu,Philippe De Mierry,Philippe Vennéguès , Mikhail A. Belkin, and James S. Speck
Phys. Rev. Applied, 16,
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⋄ Stability of the threshold voltage in fluorine-implanted normally‑off AlN/GaN HEMTs co‑integrated with commercial normally‑on GaN HEMT technology
Florent ALBANY, François LECOURT, Ewa WALASIAK, Nicolas DEFRANCE, Arnaud CURUTCHET, Hassan MAHER, Yvon CORDIER, Nathalie LABAT, Nathalie MALBERT
Microelectronics Reliabilty, 126,
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⋄ Epitaxial Zn3N2 thin films by molecular beam epitaxy:Structural, electrical and optical properties
P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, H. Rotella, M. Hugues, M. Grundmann, and J. Zúñiga-Pérez
J. Appl. Phys., 130,
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⋄ Reconstruction of multidimensional nonlinear polarization response of Pancharatnam-Berry metasurfaces
Z. Gao, P.Genevet, G. Li, and K. E. Dorfman
Phys. Rev. B, 104,
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⋄ Whispering-gallery mode InGaN microdisks on GaN substrates
H. Zi, W. Y. Fu, F. Tabataba-Vakili, H. Kim-Chauveau, E. Frayssinet, P. De Mierry, B. Damilano, J- Y. Duboz, P. Boucaud, F. Semond, H. W. Choi
Opt. Express, 29,
21280, (2021)
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⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires
K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0,
0, (2021)
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⋄ Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces
Qinghua Song, Arthur Baroni, Pin Chieh Wu, Sébastien Chenot, Virginie Brandli, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand & Patrice Genevet
Nat. Commun, 12,
3631, (2021)
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⋄ Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications
Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon, Mathieu Koudia, Elie Assaf, Antoine Ronda, Paola Castrucci, Maurizio De Crescenzi, Holger Vach, and Mathieu Abel
ACS Appl. Nano Mater., 4,
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⋄ Microstructure of epitaxial Mg3N2 thin films grown by MBE
P. John, P. Vennéguès, H. Rotella, C. Deparis, C. Lichtensteiger, and J. Zúñiga-Pérez
J. Appl. Phys., 129,
095303, (2021)
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⋄ DUV LEDs based on AlGaN Quantum Dots
Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter,
Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil
Proc. SPIE, 11686,
116860T, (2021)
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⋄ Backward Phase-Matched Second-Harmonic Generation from Stacked Metasurfaces
T. Stolt, J. Kim, S. Héron, A. Vesala, Y. Yang, J. Mun, M. Kim, M. J. Huttunen, R. Czaplicki, M. Kauranen, J. Rho, and P. Genevet
Phys. Rev. Lett., 126,
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⋄ Dynamic phase manipulation of vertical-cavity surface-emitting lasers via on-chip integration of microfluidic channels
Zhuangzhuang Zhao, Yiyang Xie, Guanzhong Pan, Peinan Ni, Qiuhua Wang, Yibo Dong, Liangchen Hu, Jie Sun, Hongda Chen, Chen Xu, and Patrice Genevet
Opt. Express, 29,
1481, (2021)
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⋄ Proton Energy Loss in GaN
Jean-Yves Duboz,* Julie Zucchi, Eric Frayssinet, Sébastien Chenot, Maxime Hugues,
Jean-Claude Grini, and Joël Hérault
Phys. Stat. Sol. B, ,
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⋄ Bandwidth-unlimited polarization-maintaining metasurfaces
Q. Song, S. Khadir, S. Vézian, B. Damilano, P. D. Mierry, S. Chenot, V. Brandli and P. Genevet
Sci. Adv., 7(5),
eabe1112, (2021)
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⋄ Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO
N. Temahuki, F. Jomard, A. Lusson, I. Stenger, S. Hassani, J. Chevallier, J.M. Chauveau, C. Morhain and J. Barjon
Appl. Phys. Lett., 118,
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⋄ Magnetoresistance of epitaxial GdN films
T. Maity, H. J. Trodahl, S. Granville, S. Vézian, F. Natali, and B. J. Ruck
J. Appl. Phys., 128,
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⋄ Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping
Rami Mantach, Philippe Vennéguès, Jesus Zúñiga-Pérez, Philippe De Mierry, Marc Portail and Guy Feuillet
Appl. Phys. Express., 13,
115504, (2020)
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⋄ Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate
B. Damilano, M. Portail, E. Frayssinet, V. Brändli, F. Faure, C. Largeron, D. Cooper, G. Feuillet, D. Turover
Sci Rep., 10,
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⋄ Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
Giannazzo, Filippo; Dagher, Roy; Schilirò, Emanuela; Panasci, Salvatore; Greco, Giuseppe; Nicotra, Giuseppe; Roccaforte, Fabrizio; Agnello, Simonpietro; Brault, Julien; Cordier, Yvon; Michon, Adrien
Nanotechnology, 32,
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⋄ Analysis of low-threshold optically pumped III-nitride microdisk lasers
F. Tabataba-Vakili, C.Brimont, B. Alloing, B. Damilano, L. Doyennette, T. Guillet, M. El Kurdi, S. Chenot, V. Brändli, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 117,
121103, (2020)
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⋄ Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
F. Tabataba-Vakili, B. Alloing, B. Damilano, H. Souissi, C.Brimont, L. Doyennette, T. Guillet, X. Checoury, M. El Kurdi, S. Chenot, E. Frayssinet, J.-Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Opt. Lett., 45,
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⋄ Nonlocality Induced Cherenkov Threshold
Hu, H., Lin, X., Zhang, J., Liu, D., Genevet, P., Zhang, B., Luo, Y.
Laser Photonics Rev., 2020,
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⋄ Integration of 2D Materials with Nitrides for Novel Electronic and Optoelectronic Applications
F. Giannazzo, E. Schilirò, R. Lo Nigro, P. Prystawko, Y. Cordier
Nitride Semiconductor Tech., ,
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⋄ High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials
L Konczewicz, S Juillaguet, E Litwin-Staszewska, R Piotrzkowski, H Peyre, S Matta, M Al Khalfioui, M Leroux, B Damilano, J Brault, S Contreras
J. Appl. Phys., 128,
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⋄ Printing polarization and phase at the optical diffraction limit: near-and far-field optical encryption
Q. Song, S. Khadir, S. Vézian, B. Damilano, P. de Mierry, S. Chenot, V. Brandli, R. Laberdesque, B. Wattellier and P. Genevet
Nanophotonics, 10(1),
697, (2020)
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⋄ Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon
M. Zielinski, S. Monnoye, H. Mank, F. Torregrosa, G. Grosset, Y. Spiegel, M. Portail, A. Michon
Mat. Sci. For., 1004,
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⋄ Photoassisted chemical smoothing of AlGaN surface after laser lift-off
Zhongming Zheng, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, and Baoping Zhang
JVST B, 38,
042207, (2020)
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⋄ Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces
Q. Song, A. Baroni, R. Sawant, P. Ni, V. Brandli, S. Chenot, S. Vézian, B. Damilano, P. de Mierry1, S. Khadir, P. Ferrand and P. Genevet
Nat. Commun, 11,
2651, (2020)
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⋄ Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template
Hongjian Li, Haojun Zhang, Panpan Li, Matthew Wong, Yi Chao Chow, S. Pinna, J. Klamkin, P. Demierry, J. Speck, S. Nakamura, S. Denbaars
J. Phys. Photonics, 2,3,
031003, (2020)
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⋄ Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses
E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,7,
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⋄ A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Blandine Alloing, Mathieu Leroux, Seoung-Hwan Park, Julien Brault and Yong-Hoon Cho
Nanoscale Adv., 2,
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⋄ Voigt Exceptional Points in an Anisotropic ZnO-Based Planar Microcavity:Square-Root Topology, Polarization Vortices, and Circularity
S. Richter, H. G. Zirnstein, J. Zúñiga-Pérez, E. Krüger, C. Deparis, L. Trefflich, C. Sturm, B. Rosenow, M. Grundmann, and R. Schmidt-Grund
Phys. Rev. Lett., 123,
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⋄ Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon
F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S. Rennesson, B. Damilano, E. Frayssinet, J.Y. Duboz, X. Checoury, S. Sauvage, M. El Kurdi, F. Semond, B. Gayral, P. Boucaud
Sci Rep., 9,
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⋄ Metasurface orbital angular momentum holography
H. Ren, G. Brière, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. Maier, P. Genevet
Nat. Commun, 10,
2986, (2019)
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⋄ MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors with low RF losses
E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T.H. Ngo, M. Zielinski, M. Portail, J.C. De Jaeger, Y. Cordier
Phys. Stat. Sol. A, 217,
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⋄ Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates
A. Jollivet, M. Tchernycheva, V. Trinité, E. Frayssinet, P. De Mierry, Y. Cordier and F.H. Julien
Appl. Phys. Lett., 115,
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⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials
P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5,
52, (2019)
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⋄ Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density
R. Dagher, P. de Mierry, B. Alloing, V. Brändli, M. Portail, B. Damilano, N. Mante, N. Bernier, P. Gergaud, M. Cottat, C. Gourgon, J. Zúñiga-Pérez, G. Feuillet
J. Cryst. Growth, 526,
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⋄ Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
J. Brault, S. Matta, T.H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil
J. Appl. Phys., 126,
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⋄ The Effect of Inductively Coupled Plasma Etching on the I–V Curves of the Avalanche Photodiode with GaN/AlN Periodically Stacked Structure
X. Wu, L. Wang, Z. Hao, Y. Han, C. Sun, B. Xiong, J. Wang, H. Li, Y. Luo, J. Brault, M. Al Khalfioui, M. Nemoz, M. Li, J. Kang, Q. Li
Phys. Stat. Sol. A, 216(24),
1900655, (2019)
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⋄ Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates
M. Khoury, H. Li, H. Zhang, B. Bonef, M. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J.S. Speck, S. Nakamura, S.P. DenBaars
ACS Appl. Mater. Interfaces, 11, 50,
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⋄ High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
F. Giannazzo, G. Greco, E. Schilirò, R. Lo Nigro, I. Deretzis, A. La Magna, F. Roccaforte, F. Iucolano, S. Ravesi, E. Frayssinet, A. Michon, Y. Cordier
ACS Appl. Electron. Mater., 1,
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⋄ Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
H. Li, M. S. Wong, M. Khoury, B. Bonef, H. Zhang, Y. Chow, P. Li, J. Kearns, A. A. Taylor, P. De Mierry, Z. Hassan, S. Nakamura, and S. P. DenBaars
Opt. Express, 27,
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⋄ Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
E. Schilirò, F. Giannazzo, C. Bongiorno, S. Di Franco, G. Greco, F. Roccaforte, P. Prystawko, P. Kruszewski, M. Leszczyński, M. Krysko, A. Michon, Y. Cordier, I. Cora, B. Pecz, H. Gargouri, R. Lo Nigro
Mat Sci Semicon Proc, 97,
35-39, (2019)
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⋄ Metasurfaces Orbital Angular Momentum Holography
H. Ren, G. Briere, X. Fang, P. Ni, R. Sawant, S. Héron, S. Chenot, S. Vézian, B. Damilano, V. Brändli, S. A. Maier, and P. Genevet
Nat. Commun, 10,
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⋄ Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS2-Gap-Mode Metasurfaces
P. Ni, A. de Luna Bugallo, V.M. Arellano Arreola, M.F. Salazar, E. Strupiechonski, V. Brändli, R. Sawant, B. Alloing and P. Genevet
ACS Photonics, 6, 7,
1594-1601, (2019)
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⋄ An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces
G. Brière, P. Ni, S. Héron, S. Chenot, S. Vézian, V. Brändli, B. Damilano, J-Y. Duboz, M. Iwanaga and P. Genevet
Adv. Opt. Mater., 7(14),
1801271, (2019)
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⋄ III-nitride on silicon electrically injected microrings for nanophotonic circuits
F. Tabataba-Vakili, S. Rennesson, B. Damilano, E. Frayssinet, J.-Y. Duboz, F. Semond, I. Roland, B. Paulillo, R. Colombelli, M. El Kurdi, X. Checoury, S. Sauvage, L. Doyenette, C. Brimont, T. Guillet, B. Gayral, and P. Boucaud
Opt. Express, 27,
11800, (2019)
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⋄ Enhanced Second-Harmonic Generation in a Single Microwire Based on Localized Surface Plasmon
J. Li, H. Zhu, Z. Chen, Y. Huang, H. Zheng, Z. Tang, X. Gui, S. Wang, Z. Tang, P. Ni, and P. Genevet
Phys. Stat. Sol. B, 256,
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⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12,
045007, (2019)
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⋄ Role of In in hydrogenation of N-related complexes in GaInNAs
T.Mou, S.Li, C.R.Brown, V.R.Whiteside, K.Hossain, M.Al Khalfioui, M.Leroux, I.R.Sellers, B.Wang
ACS Appl. Electron. Mater., 1,
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⋄ Optimization and uncertainty quantification of gradient index metasurfaces
N. Schmitt, N. Georg, G. Brière, D. Loukrezis, S. Héron, S. Lanteri, C. Klitis, M. Sorel, U. Rômer, H. De Gersem, S. Vézian, and P. Genevet
Opt. Mater. Express, 9,
892-910, (2019)
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⋄ On the morphologies of oxides particles in optical fibers: Effect of the drawing tension and composition
M. Vermillac, H. Fneich, J. Turlier, M. Cabie, C. Kucera, D. Borschneck, F. Peters, P. Vennéguès, T. Neisius, S. Chaussedent, D. R Neuville, A. Mehdi, J. Ballato, and W. Blanc
Opt. Mater., 87,
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⋄ Silicene Nanostructures Grown on Graphene Covered SiC (0001) Substrate
I. Berbezier , A. Michon , P. Castrucci , M. Scarselli , M. Salvato , M. Scagliotti and M. De Crescenzi
Int. J. Nanosci., 18,
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⋄ Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells
A. Jollivet, B. Hinkov, S. Pirotta, H. Hoang, S. Derelle, J. Jaeck, M. Tchernycheva, R. Colombelli, A. Bousseksou, M. Hugues, N. Le Biavan, J. Tamayo-Arriola, M. Montes Bajo, L. Rigutti, A. Hierro, G. Strasser, J.M. Chauveau, and F. H. Julien
Appl. Phys. Lett., 113,
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⋄ Impact-induced chemical fractionation as inferred from hypervelocity impact experiments with silicate projectiles and metallic targets
C. Ganino, G. Libourel, A. Nakamura, S. Jacomet, O. Tottereau, P. Michel
Meteorit Planet Sci., 2306-2326,
53, (2018)
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⋄ Multisubband Plasmons in Doped ZnO Quantum Wells
M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J. M. Ulloa, N. Le Biavan, R. Peretti, F. H. Julien, J. Faist, J.M. Chauveau, and A. Hierro
Phys. Rev. Applied, 10,
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⋄ Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography
E. Di Russo, F. Moyon, N. Gogneau, L. Largeau, E. Giraud, J.F. Carlin, N. Grandjean, J.M. Chauveau, M. Hugues, I. Blum, W. Lefebvre, F. Vurpillot, D. Blavette, and L. Rigutti
J. Phys. Chem. C, 122,
16704, (2018)
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⋄ Evidence of exciton complexes in non polar ZnO/(Zn,Mg)O A-plane quantum well
M.J. Mohammed Ali, J.M.Chauveau, T.Bretagnon
Superlattices Microstruct., 120,
410, (2018)
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⋄ Chondrules as direct thermochemical sensors of solar protoplanetary disk gas
G. Libourel, M. Portail
Science_Advances, 4(7),
eaar3321, (2018)
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⋄ Blue Microlasers Integrated on a Photonic Platform on Silicon
F. Tabataba-Vakili, L. Doyennette, C. Brimont, T. Guillet, S Rennesson, E. Frayssinet, B. Damilano, J.Y. Duboz, F. Semond, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, B. Gayral, P. Boucaud
ACS Photonics, 5,
3643, (2018)
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⋄ Loss analysis in nitride deep ultraviolet planar cavity
Z. Zheng, Y. Li, O. Paul, H. Long, S. Matta, M. Leroux, J. Brault, L. Ying, Z. Zheng, and B. Zhang
J. Nanophotonics, 12,
043504, (2018)
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⋄ Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching
D. Allioux, A. Belarouci, D. Hudson, E. Magi, M. Sinobad, G. Beaudin, A. Michon, N. Singh, R. Orobtchouk, and C. Grillet
Photonics Res., 6, 5,
B74-B81, (2018)
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⋄ Time-resolved photoluminescence investigation of (Mg,Zn)O alloy growth on a non-polar plane
M.J. Mohammed Ali, J.M. Chauveau, T. Bretagnon
Superlattices Microstruct., 116,
105, (2018)
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⋄ Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
A. Hierro, M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J.M. Ulloa, N. Le Biavan, R. Peretti, F. Julien, J. Faist, J.-M. Chauveau
Proc. SPIE, 10533,
105331K, (2018)
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⋄ Experimental and ab initio study of Mg doping in the intrinsic ferromagnetic semiconductor GdN
C.-M. Lee, J. Schacht, H. Warring, H. J. Trodahl, B. J. Ruck, S. Vézian, N. Gaston, and F. Natali
J. Appl. Phys., 123,
115106, (2018)
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⋄ Electron transport in heavily doped GdN
T. Maity, H.J. Trodahl, F. Natali, and B.J. Ruck and S. Vézian
Phys. Rev. Materials, 2,
014405, (2018)
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⋄ Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs
H. Yacoub, T. Zweipfennig, H. Kalisch, A. Vescan, A. Dadgar,
Matthias Wieneke, Jürgen Bläsing, A. Strittmatter, Stephanie Rennesson,
and Fabrice Semond
Phys. Stat. Sol. A, 2018,
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⋄ Gallium nitride MEMS resonators: how residual stress impacts design and performances
C. Morelle, D. Théron, J. Derluyn, S. Degroote, M. Germain, V. Zhang, L. Buchaillot, B. Grimbert, P. Tilmant, F. Vaurette, I. Roch-Jeune, V. Brändli, V. Avramovic, E. Okada, M.Faucher
IIEEE DTIP, 24,
371–377, (2018)
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⋄ Influence of aluminum incorporation on mechanical properties of 3C-SiC epilayers
J.F. Michaud, M. Zielinski, J. Ben Messaoud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 924,
318-321, (2018)
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⋄ Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
N. Le Biavan, M. Hugues, M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, D. Lefebvre, Y. Cordier, B. Vinter, F.H. Julien, A. Hierro, and J.M. Chauveau
Appl. Phys. Lett., 111,
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⋄ Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors
F. Giannazzo, G. Fisichella, G. Greco, E. Schiliro, I. Deretzis, R. Lo Nigro, A. La Magna, F. Roccaforte, F. Iucolano, S. Lo Verso, S. Ravesi, P. Prystawko, P. Kruszewski, M. Leszczynski, R. Dagher, E. Frayssinet, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 215(10),
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⋄ Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities
F. Tabataba-Vakili, I. Roland, T.-M.o Tran, X. ChecouryMoustafa El Kurdi,1 S. Sauvage, C. Brimont, T. Guillet, S. Rennesson, J.Y. Duboz, F. Semond, B. Gayral, and P. Boucaud
Appl. Phys. Lett., 111,
131103, (2017)
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⋄ Interface dipole and band bending in the hybrid p - n heterojunction Mo S 2 / GaN ( 0001 )
H. Henck, Z. Ben Aziza, O. Zill, D. Pierucci, C. H. Naylor, M. G. Silly, N. Gogneau, F. Oehler, S. Collin, J. Brault, F. Sirotti, F. Bertran, P. Le Fevre, S. Berciaud, A. T. Charlie Johnson, E. Lhuilli
Phys. Rev. B, 96,
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⋄ 444nm InGaN light emitting diodes on low-defect-density (11-22) GaN templates on patterned sapphire
M. Khoury, H. Li, L. Y. Kuritzky, A.J. Mughal, P. de Mierry, S. Nakamura, J.S. Speck, and S. P. DenBaars
Appl. Phys. Express., 10,
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⋄ Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates
H. Li, M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E.A. Samsudin, P. de Mierry, S. Nakamura, J. S. Speck, S. P. DenBaars
ACS Appl. Mater. Interfaces, 9,
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⋄ Three-dimensional atomic-scale investigation of ZnO-MgZnO m-plane heterostructures
E. Di Russo, L. Mancini, F. Moyon, S. Moldovan, J. Houard, F. H. Julien, M. Tchernycheva, J.M. Chauveau, M.Hugues, G. Da Costa, I. Blum, W. Lefebvre, D. Blavette, and L. Rigutti
Appl. Phys. Lett., 111,
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⋄ The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs
C.R. Brown, N.J. Neste, V.R. Whiteside, B. Wang, K. Hossain, T.D. Golding, M. Leroux, M. Al Khalfioui, J.G. Tischler, C.T. Ellis, E.R. Glaser, I.R. Sellers
RSC Adv., 7,
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⋄ CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut
R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon
Mat. Sci. For., 897,
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⋄ Effect of the growth temperature and nitrogen precursor on the structural and electrical transport properties of SmN thin films
J.R. Chan, M. Al Khalfioui, S. Vézian, J. Trodahl, B. Damilano and F. Natali
MRS Advances, 2,
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⋄ Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system
T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, and R. Colombelli
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⋄ Intersubband absorption in m-plane ZnO/ZnMgO MQWs
M. Montes Bajo, J. Tamayo-Arriola, A. Jollivet, M. Tchernycheva, F. H. Julien, R. Peretti, J. Faist, M. Hugues, J. M. Chauveau, A. Hierro
Proc. SPIE, 10105,
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⋄ Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy
F. Natali, J. Trodahl, S. Vézian, A. Traverson, B. Damilano and B. Ruck
MRS Advances, 2,
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⋄ Efficient second harmonic generation in low-loss planar GaN waveguides
M. Gromovyi, J. Brault, A. Courville, S. Rennesson, F. Semond, G. Feuillet, P. Baldi, P. Boucaud, Jean-Yves Duboz, and M. P. De Micheli
Opt. Express, 25,
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⋄ Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation
B. Damilano, S. Vézian, M. Portail, B. Alloing, J. Brault, A. Courville, V. Brändli,
M. Leroux, J. Massies
J. Cryst. Growth, 477,
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⋄ Recent advances in planar optics: from plasmonic to dielectric metasurfaces
P. Genevet, F. Capasso, F. Aieta, M. Khorasaninejad, and R. Devlin
Optica, 4 (1),
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⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates
R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski,
T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A, 214(4),
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⋄ The 2016 oxide electronic materials and oxide interfaces roadmap
M. Lorenz, M. S. Ramachandra Rao, T. Venkatesan, E. Fortunato, P. Barquinha, R. Branquinho, D. Salgueiro, R. Martins, E. Carlos, A. Liu, F. K. Shan, M. Grundmann, H. Boschker, J. Mukherjee, M. Priyadarshini, N. DasGupta, J. Zúñiga-Pérez, D. J. Rogers, F.
J. Phys. D: Appl. Phys., 49,
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⋄ Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN
J. R. Chan, S. Vézian, J. Trodahl, M. Al Khalfioui, B. Damilano, and F. Natali
Cryst. Growth Des. , 16,
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⋄ Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks
I. Roland, M. Gromovyi, Y. Zeng, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, F. Semond, J. Y. Duboz, M. de Micheli, X. Checoury & P. Boucaud
Sci Rep., 6,
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⋄ Selective heteroepitaxy on deeply grooved substrate: A route to low costsemipolar GaN platforms of bulk quality
F. Tendille, D. Martin, P. Vennéguès, N. Grandjean,and Philippe De Mierry
Appl. Phys. Lett., 109,
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⋄ Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions
D. Massarotti, B. Jouault, V. Rouco, S. Charpentier, T. Bauch, A. Michon, A. De Candia, P. Lucignano, F. Lombardi, F. Tafuri, and A. Tagliacozzo
Phys. Rev. B, 94,
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⋄ Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem
L. Rigutti, L. Mancini, E. Di Russo, I. Blum, F. Moyon, W. Lefebvre, D. Blavette, F. Vurpillot, E. Giraud, J.F. Carlin, R. Butté, N. Grandjean, N. Gogneau, L. Largeau, F. H. Julien, M. Tchernycheva, J.M. Chauveau and M. Hugues
Microsc. Microanal., 22,
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⋄ Superconductivity in the ferromagnetic semiconductor samarium nitride
E. -M. Anton, S. Granville, A. Engel, S. V. Chong, M. Governale, U. Zülicke, A. G. Moghaddam, H. J. Trodahl, F. Natali, S. Vézian, and B. J. Ruck
Phys. Rev. B, 94,
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⋄ Anisotropic optical properties of a homoepitaxial (Zn, Mg) O/ZnO quantum well grown on a‐plane ZnO substrate
M. Ali, J. Mohammed, J.M. Chauveau, T. Bretagnon
Phys. Stat. Sol. C, 13,
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⋄ AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
S. Vézian, B. Damilano, F. Natali, M. Al Khalfioui, and J. Massies
J. Cryst. Growth, 450,
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⋄ Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC
B. Jouault, S. Charpentier, D. Massarotti, A. Michon, M. Paillet, J. R. Huntzinger, A. Tiberj, A.-A. Zahab, T. Bauch, P. Lucignano, A. Tagliacozzo, F. Lombardi and F. Tafuri
J. Supercond. Nov. Magn., 29,
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⋄ p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre
Mat. Sci. For., 858,
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⋄ Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
S. Contreras, L. Konczewicz, P. Kwasnicki, R. Arvinte, H. Peyre, T. Chassagne, M. Zielinski, M. Kayambaki, S. Juillaguet, K. Zekentes
Mat. Sci. For., 858,
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⋄ Polarity Control in Group-III Nitrides beyond Pragmatism
S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo,
A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht
Phys. Rev. Applied, 5,
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⋄ Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators
I. Roland, Y. Zeng, X. Checoury, M. El Kurdi, S. Sauvage, C. Brimont, T. Guillet, B. Gayral, M. Gromovyi, J. Y. Duboz, F. Semond, M. P. de Micheli, and P. Boucaud
Opt. Express, 24,
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⋄ Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO
O. Jamadi, F. Réveret, E. Mallet, P. Disseix, F. Médard, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Leymarie, X. Lafosse, S. Bouchoule, F. Li, M. Leroux, F. Semond, and J. Zúñiga-Pérez
Phys. Rev. B, 93,
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⋄ Comment on “Adsorption of hydrogen and hydrocarbon molecules on SiC(001)”
E. Wimmer, E. Celasco, L. Vattuone, L. Savio, A. Tejeda, M. Silly, M. d'Angelo, F. Sirotti, M. Rocca, A. Catellani, G. Galli, L. Douillard, F. Semond, V.Yu. Aristov, P. Soukiassian
Surf Sci Lett, 644,
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⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy
P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express., 9,
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⋄ Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
R. Khazaka, M. Grundmann, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, and J.F. Michaud
Appl. Phys. Lett., 108,
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⋄ GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
Y. Cordier, B. Damilano, P. Aing, C. Chaix, F. Linez, F. Tuomisto, P. Vennéguès, E. Frayssinet, D. Lefebvre, M. Portail, M. Nemoz
J. Cryst. Growth, 433,
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⋄ Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity
R. Hahe, C. Brimont, P. Valvin, T. Guillet, F. Li, M. Leroux, J. Zúñiga-Pérez, X. Lafosse, G. Patriarche, and S. Bouchoule
Phys. Rev. B, 92,
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⋄ Optical characterization of p-type 4H-SiC epilayers
G. Liaugaudas, D. Dargis, P. Kawasnicki, H. Peyre, R. Arvinte, S. Juillaguet, M. Zielinski, K. Jarašiūnas
Mat. Sci. For., 821-823,
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⋄ Comparative studies of n-type 4H-SiC: Raman vs Photoluminescence spectroscopy
P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, S. Juillaguet
Mat. Sci. For., 821-823,
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⋄ Raman investigation of heavily Al doped 4H-SiC layers grown by CVD
P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski,L. Konczewicz, S. Contreras, J. Camassel and S. Juillaguet
Mat. Sci. For., 806,
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⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties
P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 252,
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⋄ Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide
F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier
Nat. Commun, 6,
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⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers
R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For., 821-823,
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⋄ Silicon growth on 3C-SiC(001)/Si(001): pressure influence and thermal effect
R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne, D. Alquier, J.F. Michaud
Mat. Sci. For., 821-823,
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⋄ Investigation of Aluminium incorporation in 4H-SiC epitaxial layers
R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet and H. Peyre
Mat. Sci. For., 45,
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⋄ 3C-SiC : new interest for MEMS devices
J.F. Michaud, M. Portail, T. Chassagne, M .Zielinski and D. Alquier
Mat. Sci. For., 3,
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⋄ Highly resistive epitaxial Mg-doped GdN thin films
C.M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H.J. Trodahl, B.J. Ruck, and F. Natali
Appl. Phys. Lett., 106,
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⋄ Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques
G. Liaugaudas, D. Dargis, P. Kwasnicki, R. Arvinte, M. Zielinski, K. Jarašiūnas
J. Phys. D: Appl. Phys., 48,
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⋄ Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers
R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre
Mat. Sci. For., 821-823,
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⋄ Low loss GaN waveguides for visible light on Si Substrates
M. Gromovyi, F. Semond, J.Y. Duboz, G. Feuillet, M.P. De Micheli
J. Europ. Opt. Soc. Rap. Public., 9,
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⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment
M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski
J. Cryst. Growth, 157,
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⋄ Electrothermally driven high frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy
R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J.F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou and S. Gauthier
J. Appl. Phys., 054304,
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⋄ Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
J. Brault, D. Rosales, B. Damilano, M. Leroux, A. Courville, M. Korytov, S. Chenot, P. Vennéguès, B. Vinter, P. De Mierry, A. Kahouli, J. Massies, T. Bretagnon and B. Gil
Semicond. Sci. Tech., 29,
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⋄ Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones
M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim and Yong-Hoon Cho
J. Appl. Phys., 116,
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⋄ Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon
I. Roland, Y. Zeng, Z. Han, X. Checoury, C. Blin, M. El Kurdi, A. Ghrib, S. Sauvage, B. Gayral, C. Brimont, T. Guillet, F. Semond, P. Boucaud
Appl. Phys. Lett., 105,
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⋄ Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers
J. Zúñiga-Pérez, E. Mallet, R. Hahe, M.J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J.Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, F. Li, F. Réveret and F. Semond
Appl. Phys. Lett., 104,
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⋄ Influence of 3C-SiC/Si(111) template properties on the strain relaxation in thick GaN films
Y. Cordier, E. Frayssinet, M. Portail, M. Zielinski, T. Chassagne, M. Korytov, A. Courville, S. Roy, M. Nemoz, M. Chmielowska, P. Vennéguès, H.P.D. Schenk, M. Kennard, A. Bavard, D. Rondi
J. Cryst. Growth, 398,
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⋄ Rotated domain network in graphene on cubic-SiC(001)
A.N. Chaika, O.V. Molodtsova, A.A. Zakharov, D. Marchenko, J. Sánchez-Barriga, A. Varykhalov, S.V. Babenkov, M. Portail, M. Zielinski, B.E. Murphy, S.A. Krasnikov, O. Lübben, I.V. Shvets and V.Y. Aristov
Nanotechnology, 25,
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⋄ Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
J. Brault, B. Damilano, A. Courville, M. Leroux, A. Kahouli, M. Korytov, P. Vennéguès, G. Randazzo, S. Chenot, B. Vinter, P. De Mierry, J. Massies, D. Rosales, T. Bretagnon, B. Gil
Proc. SPIE, 8986,
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⋄ Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition
T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Souliere, G.Ferro, H.B. Weber, M. Krieger
Mat. Sci. For., 778-780,
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⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104,
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⋄ Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films
F. Natali, S. Vézian, S. Granville, B. Damilano, H.J. Trodahl, E.M. Anton, H. Warring, F. Semond, Y. Cordier, S.V. Chong, B.J. Ruck
J. Cryst. Growth, 404,
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⋄ Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application
A. Ben Amar, M. Faucher, V. Brändli, Y. Cordier, D. Théron
Phys. Stat. Sol. A, 211,
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⋄ Chapter 11: Nitride-based electron devices for high-power/high-frequency applications
Y. Cordier, T. Fujishima, B. Lu, E. Matioli, and T. Palacios
III Nitride Semiconductors and their Modern Devices, 1,
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⋄ Excitons in nitride heterostructures: From zero- to one-dimensional behavior
D. Rosales, T. Bretagnon, B. Gil, A. Kahouli, J. Brault, B. Damilano, J. Massies, M.V. Durnev, A.V. Kavokin
Phys. Rev. B, 88,
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⋄ Probing the nature of carrier localization in GaInNAs epilayers by optical methods
Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V.R. Whiteside, J.C. Keay, M.B. Johnson, I.R. Sellers, M. Al Khalfioui, M. Leroux, B.A. Weinstein, and A. Petrou
Appl. Phys. Lett., 103,
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⋄ Fabrication and characterization of a room-temperature ZnO polariton laser
F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, G. Malpuech, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, and J. Zúñiga-Pérez
Appl. Phys. Lett., 102,
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⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113,
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⋄ AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission
J. Brault, B. Damilano, B. Vinter, P. Vennéguès, M. Leroux, A. Kahouli, and J. Massies
Jpn. J. Appl. Phys., 52,
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⋄ From excitonic to photonic polariton condensate in a ZnO-based microcavity
F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. Réveret, D. Solnyshkov, J. Zúñiga-Pérez, and G. Malpuech
Phys. Rev. Lett., 110,
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⋄ Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
H. Machhadani, M. Beeler, S. Sakr, E. Warde, Y. Kotsar, M. Tchernycheva, M.P. Chauvat, P. Ruterana, G. Nataf, P. De Mierry, E. Monroy, and F.H. Julien
J. Appl. Phys., 113,
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⋄ Terahertz transmission and effective gain measurement of two-dimensional electron gas
R. Sharma, T. Laurent, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Phys. Stat. Sol. A, 210,
1454, (2013)
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⋄ Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates
N. Defrance, F. Lecourt, Y. Douvry, M. Lesecq, V. Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, J.C. De Jaeger
IEEE Transactions on Electron Devices, 60,
1054, (2013)
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⋄ High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy
R. Oliva, J. Ibañez, L. Artus, R. Cusco, J. Zúñiga-Pérez, and V. Muñoz-Sanjosé
J. Appl. Phys., 113,
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⋄ Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate
J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
Microelec. Engineering, 105,
65, (2013)
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⋄ Role of magnetic polarons in ferromagnetic GdN
F. Natali, B.J. Ruck, H.J. Trodahl, Do Le Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond and C. Meyer
Phys. Rev. B, 87,
035202, (2013)
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⋄ Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates
T. Bretagnon, L. Beaur, T. Guillet, C. Brimont, M. Gallart, B. Gil, P. Gilliot, C. Morhain
J. Lumin., 136,
355, (2013)
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⋄ Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P. Sangaré, G. Ducournau, B.Grimbert, V. Brändli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
J. Phys. D: Appl. Phys., 113,
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⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD
A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller,
T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742,
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⋄ Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
J. Brault, B. Damilano, A. Kahouli, S. Chenot, M. Leroux, B. Vinter, J. Massies
J. Cryst. Growth, 363,
282, (2013)
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⋄ GaN-based nano rectifiers for THz detection
P. Sangaré, G. Ducournau, B. Grimbert, V. Brändli, M. Faucher, C. Gaquière
IEEE IRMMW, IRMMW - THz 2012,
1-2, (2012)
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⋄ Built-in electric field and radiative efficiency of polar (0001) and semipolar (11-22) Al0.5Ga0.5N/GaN quantum dots
J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet and C. Brimont
AIP. Proceedings, 1566,
73, (2012)
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⋄ Searching for THz Gunn oscillations in GaN planar nanodiodes
A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangare, M. Faucher, B. Grimbert, V. Brändli, G. Ducournau, and C. Gaquière
J. Appl. Phys., 111,
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⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)
A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720,
625, (2012)
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⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720,
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⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC
M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349,
27, (2012)
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⋄ A new approach for AFM cantilever elaboration with 3C-SiC
S. Jiao, J.F. Michaud, M. Portail, A. Madouri, T. Chassagne, M. Zielinski, D. Alquier
Materials Letters , 77,
54, (2012)
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⋄ Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon
M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier
J. Appl. Phys., 111,
053507, (2012)
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⋄ Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates
H.P.D. Schenk, A. Bavard, E. Frayssinet, X. Song, F. Cayrel, H. Ghouli, M. Lijadi, L. Naım, M. Kennard, Y. Cordier, D. Rondi and D. Alquier
APEX, 5,
025504, (2012)
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⋄ Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy
Y. Cordier, F. Natali, M. Chmielowska, M. Leroux, C. Chaix, and P. Bouchaib
Phys. Stat. Sol. C, 9,
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⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)
A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier,
A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711,
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⋄ Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC
J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 711,
179, (2012)
- Article de conférence
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⋄ Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si
X. Song, J. Biscarrat; A. E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Mat. Sci. For., 711,
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⋄ Detailed experimental study of mean and gradient stresses in thin 3C-SiC films performed using micromachined cantilevers
S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail, D. Alquier
Mat. Sci. For., 711,
84, (2012)
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⋄ Elaboration of monocrystalline Si thin film on 3C-SiC(100)/Si epilayers by low pressure chemical vapor deposition
S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier
Mat. Sci. For., 711,
61, (2012)
- Article de conférence
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⋄ Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, N. Trad, J. Brault, P. Demolon, F. Natali and J. Massies
Phys. Stat. Sol. A, 209,
465, (2012)
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⋄ Structural and electrical characterizations of n-type implanted layers and ohmic contact on 3C-SiC
X. Song, J. Biscarrat, J.-F, Michaud, F. Cayrel, M. Zielinski, T. Chassagne, M. Portail, E. Collard, D. Alquier
Nucl. Instr. and Method Phys. Research B, 269,
2020, (2011)
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⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain
A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9,
175-178, (2011)
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⋄ AlGaN-on-Si-Based 10-mu m Pixel-to-Pixel Pitch Hybrid Imagers for the EUV Range
P.E. Malinowski, J.Y. Duboz, P. De Moor, J. John, K. Minoglou, P. Srivastava, F. Semond, E. Frayssinet, B. Giordanengo, A. BenMoussa, A. Gottwald, C. Laubis, R. Mertens, X. Van Hoof
Electron Dev. Lett., 32,
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⋄ Nanopendeo coalescence overgrowth of GaN on etched nanorod array
P. Shields, C. Liu, A. Šatka, A. Trampert, J. Zúñiga-Pérez, B. Alloing, D. Haško, F. Uherek, W. Wang, F. Causa, D. Allsopp
Phys. Stat. Sol. C, 8,
2334, (2011)
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⋄ GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get highluminescence efficiency in the near ultraviolet range
A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry,
M. Leroux, A. Courville, O. Tottereau and J. Massies
J. Appl. Phys., 110,
084318, (2011)
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⋄ GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection
M. Faucher, A. B. Amar, B. Grimbert, V. Brändli, L. Buchaillot, C. Gaquière, D. Théron, Y. Cordier, F. Semond, M. Werquin
IEEE FCS, 2011,
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⋄ Voltage controlled terahertz transmission through GaN quantum wells
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V. Korotyevyev, V. Kochelap
Appl. Phys. Lett., 99,
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⋄ Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V.V. Korotyeyev, and V.A. Kochelap
Appl. Phys. Lett., 99,
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⋄ Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
P.E. Malinowski, J.Y. Duboz, P. De Moor, K. Minoglou, J. John, S. Martin Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, and C. Van Hoof
Appl. Phys. Lett., 98,
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⋄ Electrical characterization of nitrogen implanted 3C-SiC by SSRM and c-TLM measurments
X. Song, A.E. Bazin, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Mat. Sci. For., 679-680,
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⋄ Analytical model of stress relaxation in 3C-SiC layers on silicon
M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier
Mat. Sci. For., 679-680,
79, (2011)
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⋄ Comparison of Fe and Si doping of GaN: An EXAFS and Raman study
M. Katsikini, F. Pinakidoua, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, and T.D. Moustakas
Mat. Sci. Eng. B, 176,
723, (2011)
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⋄ Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers
M. Faucher, Y. Cordier, F. Semond, V. Brändli, B. Grimbert, A. B. Amar, M. Werquin, C.Boyaval, C. Gaquière, D. Théron and L. Buchaillot
IEEE MEMS, 24th MEMS Int. Conf.,
581-584, (2011)
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⋄ Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Chusseau, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov and V. Gruzinskis
Acta Physica Polonica A, 119,
107-110, (2011)
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⋄ Measurement of Pulsed Current–Voltage Characteristicsof AlGaN/GaN HEMTs from Room Temperature to 15 K
T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, C. Palermo, L. Varani, Y. Cordier, M. Chmielowska, J.P. Faurie, B. Beaumont
Acta Phys. Pol. A, 119,
196 - 198, (2011)
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⋄ Epitaxial growth of GdN on silicon substrate using an AlN buffer layer
F. Natali, N.O.V. Plank, J. Galipaud, B.J. Ruck, H.J. Trodahl, F. Semond, S. Sorieul, L. Hirsch
J. Cryst. Growth, 312,
3583, (2010)
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⋄ Blue-green and white color tuning of monolithic light emitting diodes
B. Damilano, P. Demolon , J. Brault , T. Huault , F. Natali , J. Massies
J. Appl. Phys., 108,
073115, (2010)
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⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett., 97,
171909, (2010)
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⋄ Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors
I. Gorczyca, A. Kaminska, G. Staszczak, R. Czernecki, S.P. Łepkowski, T. Suski, H.P.D. Schenk, M. Glauser, R. Butté, J.F. Carlin, E. Feltin, N. Grandjean, N.E. Christensen, and A. Svane
Phys. Rev. B, 81,
235206 , (2010)
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⋄ Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission
Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, and Jean Massies
Phys. Stat. Sol. C, 1-3,
200983426, (2010)
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⋄ Epitaxial graphene on Cubic SiC(111)/Si(111) substrate
A. Ouerghi, A. Kahouli , D. Lucot , M. Portail , L. Travers , J. Gierack , J. Penuelas , P. Jegou , A. Shukla , T. Chassagne , M. Zielinski
Appl. Phys. Lett., 96,
191910, (2010)
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⋄ Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation
A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne,
M. Portail, M. Zielinski, E. Collard, D. Alquier
Mat. Sci. Eng. B, 171,
120, (2010)
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⋄ Temperature dependence of electron spin relaxation in bulk GaN
J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Phys. Rev. B, 81,
155216, (2010)
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⋄ Evidence of electrical activity of extended defects in 3C-SiC grown on Si
X. Song, J.F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Appl. Phys. Lett., 96,
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⋄ Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon
F. Natali, N. O.V. Plank, B. M. Ludbroo, J. Richter, T. Minnee, B. J. Ruck, H. J. Trodahl, J. V. Kennedy, L. Hirsch
Jpn. J. Appl. Phys., 49,
025505, (2010)
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⋄ Monolithic integration of AlGaN/GaN HFET with MOS on silicon < 111 > substrates
P.N. Chyurlia, F. Semond , T. Lester , J.A. Bardwell et al
Electron. Lett., 46,
240, (2010)
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⋄ Recent advances in surface preparation of silicon carbide and other wide band gap materials
M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A.E. Bazin, J.F. Michaud, M. Portail
Mat. Sci. For., 645-648,
753-758, (2010)
- Article de conférence - invité
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⋄ SiC on SOI resonators: a route for electrically driven MEMS in harshenvironment
M. Placidi, A. Pérez-Tomás, P. Godignon, N. Mestres, G. Abadal, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648,
845-848, (2010)
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⋄ Micromachining of thin 3C-SiC films for mechanical properties investigation
J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier
ACS Appl. Electron. Mater., 1246,
B09-04, (2010)
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⋄ High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature
A.E. Bazin, J.F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, and D. Alquier
AIP Conf Proc, 1292,
51, (2010)
- Article de conférence
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⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses
M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier
AIP Conf Proc, 1292,
115, (2010)
- Article de conférence
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⋄ Comparison of GaN-Based MOS Structures with Different Interfacial Layer Treatments
E. Al Alam, I. Cortes, M. P. Besland, P. Regreny, A. Goullet, F. Morancho, A. Cazzare, Y. Cordier, K. Isoird, F. Olivié
Proc. of the 27th conference on microelectronics, 2010,
459, (2010)
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⋄ Thermally induced surface reorganization of 3C-SiC(111) epilayersgrown on silicon substrates
M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski
Mat. Sci. For., 645-648,
155-158, (2010)
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⋄ Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers
A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne, M. Zielinski
Mat. Sci. For., 645-648,
585-588, (2010)
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⋄ Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon
S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J.F. Michaud, M. Portail, and D. Alquier
AIP Conf Proc, 1292,
15, (2010)
- Article de conférence
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⋄ Anisotropic electron spin relaxation in bulk GaN
J.H. Buss, J. Rudolph, F. Natali, F. Semond, D. Hagele
Appl. Phys. Lett., 95,
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⋄ Backside illuminated GaN on Si Schottky photodiode for UV radiation detection
P.E. Malinowski, J. John, J.Y. Duboz, A. Lorenz, J.G. Rodriguez Madrid, C. Sturdevant, G. Hellings, K. Chen1, M. Leys, J. Derluyn, J. Das, M. Germain, K. Minoglou, P. De Moor, R. Mertens, E. Frayssinet, F. Semond, J.F. Hochedez and B. Giordaneng
Electron Dev. Lett., 30,
1308, (2009)
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⋄ Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions
S. Roy, M. Portail, T. Chassagne, J.M. Chauveau, P. Vennéguès, M. Zielinski
Appl. Phys. Lett., 95,
081903, (2009)
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⋄ Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)
Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M.P. Besland
Phys. Stat. Sol. C, 6 - S2,
1016-1019, (2009)
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⋄ Advances in liquid phase conversion of (100) and (111) oriented Si wafers into self standing 3C-SiC
M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras, J. Camassel
Mat. Sci. For., 615-617,
49, (2009)
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⋄ Windowed growth of AlGaN/GaN heterostructures on Silicon (111) substrates for future MOS integration
P. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J.C. Moreno, and N.G. Tarr
Phys. Stat. Sol. A, 206,
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⋄ Infrared detectors based on InGaAsN/GaAs intersubband transitions
J.Y. Duboz, M. Hugues, B. Damilano, A. Nedelcu, P. Bois, N. Kheirodin, F.H. Julien
Appl. Phys. Lett., 94,
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⋄ Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma source
F. Natali, Y. Cordier, C. Chaix, P. Bouchaib
J. Cryst. Growth, 311,
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⋄ Recent ROB developments on wide bandgap based UV sensors
B. Giordanengo, A. Ben Moussa, J.F. Hochedez, A. Soltani, P. de Moor, K. Minouglou, P. Malinowski, J.Y. Duboz, Y.M. Chong, Y.S. Zhou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin, and H.X. Jiang
EDP_EAS, 37,
199, (2009)
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⋄ Growth and characterization of AlGaN/GaN HEMT structures on 3C-SiC/Si(111) templates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
Mat. Sci. For., 600-603,
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⋄ Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells
F. Natali, Y. Cordier, J. Massies, S. Vézian, B. Damilano, M. Leroux
Phys. Rev. B, 79,
035328, (2009)
- Papier régulier
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⋄ Highly sensitive determination of n+ doping level in 3C-SiC and GaN epilayers by Fourier Transform Infrared spectroscopy
M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry
Mat. Sci. Eng. B, 165,
42, (2009)
- Papier régulier
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⋄ Anisotropic chemical etching of semipolar {10-1-1}/{10-1+1} ZnO crystallographic planes: polarity versus dangling bonds
E. Palacios-Lidon, B. Pérez-Garcia, P. Vennéguès, J. Colchero, V. Muñoz-Sanjosé, and J. Zúñiga-Pérez
Nanotechnology, 20,
065701, (2009)
- Papier régulier
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⋄ Comparative Study of the Role of the Nucleation Stage on the Final Crystalline Quality of (111) and (100) silicon carbide films deposited on silicon substrates
M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz
J. Appl. Phys., 105,
083505, (2009)
- Papier régulier
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⋄ GaN/Al0.5Ga0.5N quantum dots and quantum dashes
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, R. Tauk, M. Leroux, and J. Massies
Phys. Stat. Sol. (b), 246,
845-845, (2009)
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⋄ Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range
J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, and J. Massies
J. Appl. Phys., 105,
033519, (2009)
- Papier régulier
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⋄ Role of substrate misorientation in relaxation of 3C-SiC layers on silicon
M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier
Mat. Sci. For., 615-617,
169, (2009)
- Article de conférence
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⋄ Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy
M. Zielinski, M. Portail, S. Roy, T. Chassagne, C. Moisson, S. Kret, Y. Cordier
Mat. Sci. Eng. B, 165,
9, (2009)
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⋄ Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies
Appl. Phys. Lett., 90,
101117, (2008)
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⋄ Mosaicity and stress effects on luminescence properties of GaNMosaicity and stress effects on luminescence properties of GaN
A. Toure, A. Bchetnia, T.A. Lafford, Z.Benzarti, I. Halidou, Z. Bougrioua, B. El Jani
Phys. Stat. Sol. A, 208,
2042, (2008)
- Article de conférence
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⋄ Magnesium diffusion profile in GaN grown by MOVPE
Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani
J. Cryst. Growth, 310,
3274, (2008)
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⋄ Polarized emission from GaN/AlN quantum dots: single-dot spectroscopy and symmetry-based theory
R. Bardoux, T. Guillet, B. Gil, P. Levebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77,
235315, (2008)
- Papier régulier
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⋄ Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor
M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre
J. Cryst. Growth, 310,
3174-3182, (2008)
- Papier régulier
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⋄ Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory
R. Bardoux, T.y Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, F. Semond
Phys. Rev. B, 77,
235315, (2008)
- Papier régulier
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⋄ AlGaN photodetectors for applications in the extreme UV range
P. Malinowski, J. John, A. Lorrenz, P.A. Alonso, M. Germain, J. Derluyn, K. Cheng, G. Borghs, R. Mertens, J.Y. Duboz, F. Semond, U. Kroth, M. Richter, J.F. Hochedez, A. Ben Moussa
Proc. SPIE, 7003,
, (2008)
- Article de conférence
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⋄ P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si
A.E. Bazin, J.F. Michaud, M. Portail, T. Chassagne, M. Zielinski, J.F. Lecoq, E. Collard, D. Alquier
Mater. Res. Soc. Symp. Proc., 1068,
1068-C07-09, (2008)
- Article de conférence
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⋄ AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, T. Chassagne
J. Cryst. Growth, 310,
4417–4423, (2008)
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⋄ Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
B. Damilano, F. Natali, J. Brault, T. Huault, D. Lefebvre, R. Tauk, E. Frayssinet, J.C. Moreno, Y. Cordier, F. Semond, S. Chenot, and J. Massies
Applied Physics Express, 1,
121101, (2008)
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⋄ Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski and T. Chassagne
ACS Appl. Electron. Mater., 1068,
C04-05, (2008)
- Article de conférence
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⋄ Blue-light emission from GaN/Al0.5Ga0.5N quantum dots
T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, and J. Massies
Appl. Phys. Lett., 92,
051911, (2008)
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⋄ Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities
F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I.R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli
Appl. Phys. Lett., 92,
042119, (2008)
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⋄ Strong light-matter coupling in GaN-based microcavities grown on silicon substrates
F. Semond, I.R. Sellers, N. Ollier et al.
MRS proceedings, 1068,
95-100, (2008)
- Article de conférence
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⋄ Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
F. Semond, Y. Cordier, F. Natali, A. Le Louarn, S. Vézian, S. Joblot, S. Chenot, N. Baron, E. Frayssinet, J.C. Moreno, J. Massies
MRS symposium proceedings, 1068,
51-56, (2008)
- Article de conférence
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⋄ Structural and morphological characterization of 3C-SiC films grown on (111), (211) and (100) silicon substrates
M. Portail, M. Nemoz, M. Zielinski, T. Chassagne
Mat. Sci. For., 600-603,
231, (2008)
- Article de conférence
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⋄ Strain in 3C-SiC heteroepitaxial layers grown on (100) and (111) oriented silicon substrates
M. Zielinski, M. Portail, T. Chassagne, Y. Cordier
Mat. Sci. For., 600-603,
207-210, (2008)
- Article de conférence
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⋄ Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates
Y. Cordier, M. Portail, S. Chenot, O. Tottereau, M. Zielinski, and T. Chassagne
Phys. Stat. Sol. (c), 5, No. 6,
1983–1985, (2008)
- Article de conférence
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⋄ Optical and structural properties of Al1-xInxN epilayers grown in three different MOVPE reactors
R.W. Martin, E. Alves, N. Franco, C.J. Humphreys, M.J. Kappers, M. Korytov, M. Leroux, K. Lorenz, S. Magalhães, K.P. O’Donnell, R.A. Oliver, T.C. Sadler, H.P.D. Schenk, L.T. Tan, P. Vennéguès, K. Wang, and I.M. Watson
International Workshop on Nitride Semiconductors, ,
, (2008)
- Article de conférence
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⋄ Observation of Asymetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates
M. Zielinski, M. Portail, T. Chassagne, S. Kret, M. Nemoz, Y. Cordier
Mater. Res. Soc. Symp. Proc., 1069,
1069-D07-09, (2008)
- Article de conférence
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⋄ Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding
S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli
J. Appl. Phys., 103,
123112, (2008)
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⋄ GaN for x-ray detection
J.Y. Duboz, M. Laügt, H.P.D. Schenk, B. Beaumont, J.L. Reverchon, A.D. Wieck, and T. Zimmerling
Appl. Phys. Lett., 92,
263501, (2008)
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⋄ Low Specific Contact Resistance to 3C-SiC grown on (100) Si substrates
A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard; D. Alquier
Mat. Sci. For., 556-557,
721, (2007)
- Article de conférence
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⋄ Trends in nitrogen doping for 3C-SiC films on silicon
M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras and J. Camassel
Mat. Sci. For., 556-557,
207, (2007)
- Article de conférence
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⋄ Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells
T. Guillet, T. Bretagnon, T. Taliercio, P. Lefebvre, B. Gil, C. Morhain, X.D. Tang
Superlattice Microst, 41,
352, (2007)
- Article de conférence
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⋄ Barrier composition dependence of the internal electric field in ZnO/Zn1-xMgxO quantum wells
T. Bretagnon, P. Lefebvre, T. Guillet, T. Taliercio, B. Gil, C. Morhain
Appl. Phys. Lett., 90,
201912, (2007)
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⋄ AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV)
J. John, P. Malinowski, P. Aparicio, J.Y. Duboz, F. Semond et al.
Optical sensing technology and applications, 6585,
33-40, (2007)
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⋄ Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots
M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.Y. Duboz, J. Massies, T. Taliercio, P. Lefebvre, T. Guillet, P. Valvin, T. Bretagnon, B. Gil, A.D. Wieck
Jpn. J. Appl. Phys, 46,
12-16, (2007)
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⋄ Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
J.M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, M. Tesseire-Doninelli, and G. Neu
Applied Physics A: Materials Science and Processing, 88 (1),
65-9, (2007)
- Article de conférence
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⋄ Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy
J.M. Chauveau, D.A. Buell, M. Laugt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, and C. Morhain
J. Cryst. Growth, 301-302,
366-9, (2007)
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⋄ Polariton emission in GaN microcavities
M. Gurioli, M. Zamfirescu, F. Stokker-Cheregi, A. Vinattieri, I.R. Sellers, F.Semond, M. Leroux, and J. Massies
Superlattice Microst, 41,
284, (2007)
- Article de conférence
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⋄ Deuterium Out-diffusion Kinetics in Magnesium-doped GaN
J. Chevallier, F. Jomard, N.H. Nickel, P. de Mierry, S. Chenot, Y. Cordier, M.A. di Forte-Poisson, and S. Delage
Mat. Res. Soc. Symp. Proc., 994,
F03-22, (2007)
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⋄ Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions
M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras; J. Camassel
Phys. Stat. Sol. (a), 204,
981, (2007)
- Article de conférence
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⋄ Radiative lifetime in wurtzite GaN/AlN quantum dots
R. Bardoux, T. Bretagnon, T. Guillet, P. Lefebvre, T. Taliercio, P. Valvin, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (c), 4, Issue 1,
183-186, (2007)
- Article de conférence
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⋄ Polariton thermalization in GaN microcavities in the strong light-matter coupling regime
F. Stokker-Cheregi, M. Zamfirescu, A. Vinattieri, M. Gurioli, I. Sellers, F. Semond, M. Leroux, and J. Massies
Superlattice Microst, 41,
376, (2007)
- Article de conférence
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⋄ Photoelectric properties of highly excited GaN-Fe epilayers grown by modulation- and continuous-doping techniques
Z. Bougrioua, M. Azize, B. Beaumont, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarasiunas
J. Cryst. Growth, 300,
228-232, (2007)
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⋄ Nanogoniometry with Scanning Force Microscopy: A Model Study of CdTe Thin Films
E. Palacios-Lidón, L. Guanter, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, and J. Colchero
Small, 3,
474, (2007)
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⋄ Formation and rupture of Schottky nanocontacts on ZnO nanocolumns
B. Pérez-García, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, J. Colchero, and E. Palacios-Lidón
Nano Letters, 7,
1505, (2007)
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⋄ Electron Scattering Spectroscopy by High Magnetic Field in Mid-Infrared Quantum Cascade Lasers
A. Leuliet, A. Wade, A. Vasanelli, G. Fedorov, D. Smirnov, M. Giovannini, J. Faist, G. Bastard, B. Vinter, and C. Sirtori
ICPS, AIP Conference Proceedings, 893,
497-498, (2007)
- Article de conférence
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⋄ Nanoscale determination of surface orientation and electrostatic properties of ZnO thin films
J. Zúñiga-Pérez, E. Palacios-Lidón, V. Muñoz-Sanjosé, and J. Colchero
Appl. Phys. A, 88,
77, (2007)
- Article de conférence
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⋄ All-optical characterisation of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE grown GaN
T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, B. Beaumont, P. Gibart, A. Kakanakova, E. Janzen, D. Gogova, B. Monemar, M. Heuken
J. Cryst. Growth, 300,
223-227, (2007)
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⋄ Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature
I.R. Sellers, F. Semond, M. Leroux, J. Massies, M. Zamfirescu, F. Stokker-Cheregi, M. Gurioli, A. Vinattieri, M. Colocci, A. Tahraoui, and A.A. Khalifa
Phys. Rev. B, 74,
193308, (2006)
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⋄ Photoluminescence of single GaN/AlN quantum dots on Si(111): spectral diffusion effects
R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, S. Rousset, B. Gil, F. Semond
Phys. Rev. B, 74,
195319, (2006)
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⋄ Spin-exchange interaction in ZnO-based quantum wells
B. Gil, P. Lefebvre, T. Bretagnon, T. Guillet, J.A. Sans, T. Taliercio, and C. Morhain
Phys. Rev. B, 74,
153302, (2006)
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⋄ Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates
Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P. Faurie
Journal de Physique IV, 132,
365-368, (2006)
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⋄ Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots
T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet, T. Taliercio, B. Gil, N. Grandjean, F. Semond, B. Damilano, A. Dussaigne, J. Massies
Phys. Rev. B, 73(11),
113304-1-4, (2006)
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⋄ Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study
B. Boudjelida, I. Gee, J. Evans-Freeman, S.A. Clark, M. Azize, J.M. Bethoux, and P. de Mierry
Phys. Stat. Sol. C, 3,
1823, (2006)
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⋄ Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications
E. Feltin, J.F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, and N. Grandjean
Appl. Phys. Lett., 88,
051108, (2006)
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⋄ Role of elastic scattering mechanisms in GaInAs/AlInAs quantum cascade lasers
A. Vasanelli, A. Leuliet, C. Sirtori, A. Wade, G. Fedorov, D. Smirnov, G. Bastard, B. Vinter, M. Giovannini, and J. Faist
Appl. Phys. Lett., 89 (17),
172120-3, (2006)
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⋄ Application of LTPL Investigation Methods to CVD-Grown SiC
J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud
Chem. Vap. Deposition, 12,
549–556, (2006)
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⋄ Stress relaxation during the growth of 3C-SiC/Si thin films
M. Zielinski, A. Leycuras, S. Ndiaye, T. Chassagne
Appl. Phys. Lett., 89,
131906, (2006)
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⋄ Investigation of growth mechanisms of GaN quantum dots on (0001) AlN surface by ammonia MBE
V.G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K.S. Zhuralev, P. Vennéguès
Phys. Stat. Sol. (c), 3, No.6,
1548, (2006)
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⋄ Optoelectronic properties of GaN epilayers in the region of yellow luminescence
C. Grazzi, H.P. Strunk, A. Castaldini, A. Cavallini, H.P.D. Schenk, and P. Gibart
J. Appl. Phys., 100,
073711, (2006)
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⋄ Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques
T. Malinauskas, K. Jarasiunas, S. Miasojedovas, S. Jursenas, B. Beaumont, P. Gibart
Appl. Phys. Lett., 88,
202109, (2006)
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⋄ Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells
C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis
Phys. Rev. B, 72 (24),
241305-4, (2005)
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⋄ Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon
F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N. Ollier, J. Leymarie, P. Disseix Et A. Vasson
Appl. Phys. Lett., 87,
021102, (2005)
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⋄ Inhomogeneous broadening of AlGaN/GaN quantum wells
F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vézian, N. Grandjean, and J. Massies
Phys. Rev. B, 71,
75311, (2005)
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⋄ AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)
Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennéguès, J. Massies
J. Cryst. Growth, 278/1-4,
393-396, (2005)
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⋄ Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P.Gibart, J.P. Faurie
J. Cryst. Growth, 278/1-4,
383-386, (2005)
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⋄ Light-ion beam analysis for microelectronic applications
L. Hirsch, P. Tardy, G. Wantz, N. Huby, P. Moretto, L. Serani, F. Natali, B. Damilano, J. Y. Duboz and J. L. Reverchon
Nucl Inst and MethodB, 240,
265, (2005)
- Article de conférence
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⋄ Structural and Electronic Properties of ZnMgO/ZnO Quantum Wells
C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, and G. Neu
Superlattice Microst, 38,
455-463, (2005)
- Article de conférence - invité
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⋄ Electron mobility and transfer characteristics in AlGaN/GaN HEMTs
Y. Cordier, M. Hugues, P. Lorenzini, F. Semond, F. Natali, and J. Massies
Phys. Stat. Sol. (c), 2, No. 7,
2720-2723, (2005)
- Article de conférence
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⋄ Layer quality and 2DEG behavior in AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy
Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.P.Faurie
Phys. Stat. Sol. (c), 2, No. 7,
2195-2198, (2005)
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⋄ Characterisation of differently grown GaN epilayers by time-resolved four-wave mixing technique
K. Jarašiunas, T. Malinauskas, R. Aleksiejunas, M. Sudžius, E. Frayssinet, B. Beaumont, J.P. Faurie and P. Gibart
Phys. Stat. Sol. (a), 202, No. 4,
566– 571, (2005)
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⋄ Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures
J. Mimila-Arroyo, M. Barbe, F. Jomard, J. Chevallier, M.A. Poisson, S. Delage, C. Dua, Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini and J. Massies
Proc. Material Research Society Spring Meeting, 864,
579-584, (2005)
- Article de conférence
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⋄ Spectroscopy of a bulk GaN microcavity grown on Si(111)
N. Ollier, F. Natali, D. Byrne, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond Et J. Massies
Jpn. J. Appl. Phys, 44,
4902, (2005)
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⋄ Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy
S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier and J. Massies
Phys. Stat. Sol. (c), 2, No. 7,
2187-2190, (2005)
- Article de conférence
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⋄ Growth of GaN/AlxGa1-xN-based Bragg reflectors on sapphire and bulk GaN substrates by metalorganic chemical vapor deposition: Towards group III-nitride microcavities
H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, P. Wisniewski, S. Grzanka, M. Krysko, O. Tottereau, P. Vennéguès, P. Perlin, M. Leszczynski, and T. Suski
Proc. 9th Ann. Nanophys. Nanoel. Symp., ,
338-339, (2005)
- Article de conférence
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⋄ Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulkcrystals and heterostructures of GaN
K. Jarašiunas, T. Malinauskas, A. Kadys, R. Aleksiejunas, M. Sudžius, S. Miasojedovas, S. Juršenas, A. Žukauskas, D. Gogova, A. Kakanakova-Georgieva, E. Janzén, H. Larsson, B. Monemar, P. Gibart, and B. Beaumont
Phys. Stat. Sol. (c), 2, No. 3,
1006– 1009, (2005)
- Article de conférence
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⋄ About some optical properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret, B. Damilano, A. Dussaigne, N. Grandjean, A. Le-Louarn, S. Vézian and J. Massies
Superlattice Microst, 36,
659, (2004)
- Article de conférence
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⋄ Ta2Si Thermal Oxidation : A Simple Route to a High-k Gate Dielectric on 4H-SiC
A. Pérez-Tomas, P. Godignon, J. Montserrat, J. Millian, N. Mestres, P. Vennéguès and J. Stoemenos
Electrochem. Solid-State Lett., 7,
F93, (2004)
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⋄ Optical properties of high-Al-content crack free AlxGa1-x N (x up to 0.67) grown on Si(111) by molecular beam epitaxy
F. Natali, D. Byrne, M. Leroux, F. Semond and J. Massies
Sol. Stat. Comm., 132,
679, (2004)
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⋄ Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, J. Massies
Phys. Stat. Sol. (b), 241, Issue 12,
2779-2782, (2004)
- Article de conférence
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⋄ Potentialities of GaN-based microcavities in strong coupling regime at room temperature
N. Ollier, F. Natali, D. Byrne, P. Disseix, A. Vasson, J. Leymarie, F. Semond, J. Massies
Superlattices Microstruct., 34,
599-606, (2004)
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⋄ Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride
S. Vézian, F. Natali, F. Semond and J. Massies
Applied Surface Science, 234,
445, (2004)
- Article de conférence
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⋄ GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties
C. Grazzi, A. Castaldini, A. Cavallini, H.P.D. Schenk, P. Gibart, and H. P. Strunk
Eur. Phys. J. Appl. Phys., 27,
193, (2004)
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⋄ Low frequency noise behavior in GaN HEMT's on silicon substrate
L. Bary, E. Angeli, A. Rennane, G. Soubercaze-Pun, J.G. Tartarin, A. Minko, V. Hoel, Y. Cordier, C. Dua, R. Plana, J. Graffeuil
Proc. SPIE, 5470,
286-295, (2004)
- Article de conférence
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⋄ High Microwave and Noise Performance of 0.17 µm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates
A. Minko, V. Hoël, S. Lepilliet, G. Dambrine, J.C. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 25, No.4,
167-169, (2004)
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⋄ Group III-nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy
H.P.D. Schenk, R. Czernecki, K. Krowicki, G. Targowski, S. Grzanka, M. Krysko, P. Prystawko, P. Wisniewski, M. Leszczynski, G. Franssen, J. Muszalski, T. Suski, and P. Perlin
Phys. Stat. Sol. (c), 1,
193, (2004)
- Article de conférence
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⋄ Phonon deformation potential in hexagonal GaN
F. Demangeot, J. Frandon, P. Baules, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,
155215, (2004)
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⋄ Spectroscopy of the electron states in self-organized GaN/AlN quantum dots
A. Helman, M. Tchernycheva, Kh. Moumanis, A. Lusson, F. H. Julien, F. Fossard, E. Monroy, B. Daudin, Le Si Dang, B. Damilano, N. Grandjean
Phys. Stat. Sol. (c), 1, Issue 6,
1456-1460, (2004)
- Article de conférence
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⋄ Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes
S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, and J. Massies
J. Appl. Phys., 96,
180, (2004)
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⋄ From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)
S. Vézian, F. Natali, F. Semond and J. Massies
Phys. Rev. B, 69,
125329, (2004)
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⋄ From GaAs:N to oversaturated GaAsN : Analysis of the band-gap reduction
T. Talierco, R. Intartaglia, B. Gil, P. Lefebvre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M.A. Pinault, M. Laügt, and E. Tournié
Phys. Rev. B, 69,
073303, (2004)
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⋄ Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities And O2 annealing effects
C. Morhain, M. Teisseire-Doninelli, S. Vézian, C. Deparis, P. Lorenzini, F. Raymond, J. Guion, G. Neu
Phys. Stat. Sol. (b), 241 (3),
631, (2004)
- Article de conférence
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⋄ Advances in the realisation of GaN-based microcavities: Towards strong coupling at room temperature
F. Semond, D. Byrne, F. Natali, M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, J. Leymarie
Mater. Res. Soc. Symp. Proc., 798,
613-18, (2004)
- Article de conférence
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⋄ Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation
P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, J. Massies
Phys. Rev. B, 69,
35307, (2004)
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⋄ Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg reflector
D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, J. Massies
Jpn. J. Appl. Phys, 42, Part 2, No. 12B,
L1509, (2003)
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⋄ Isoelecrtonic traps in heavily doped GaAs:(In,N)
R. Intartaglia, T. Talierco, P. Valvin, B. Gil, T. Bretagnon, P. Lefebvre, M.A. Pinault, E. Tournié
Phys. Rev. B, 68,
235202, (2003)
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⋄ Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation
T. Bretagnon, S. Kalliakos, P. Lefebvre, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Rev. B, 68,
205301, (2003)
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⋄ Optical properties of GaN/AlN quantum boxes under high photo-excitation
S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Talierco, P. Valvin, B. Gil, N. Grandjean, A. Dussaigne, B. Damilano, and J. Massies
Phys. Stat. Sol. (c), 0(7),
2666-2669, (2003)
- Article de conférence
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⋄ Observation of Rabi splitting in a bulk GaN microcavity grown on silicon
N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies
Phys. Rev. B, 68(15),
153313, (2003)
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⋄ Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
J.M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond
J. Appl. Phys., 94,
6499, (2003)
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⋄ Cubic SiC surface structure studied by X-ray diffraction
M. D'angelo, H. Enriquez, V.Yu. Aristov, P. Soukiassian, G. Renaud, A. Barbier, S. Chiang, F. Semond, L. Di-Cioccio, T. Billion
Mat. Sci. For., 433-436,
571-4, (2003)
- Article de conférence
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⋄ Failure analysis of a cascade laser structure by electrostatic force microscopy
M. Azize, P. Girard, M. Teisseire, A. Baranov and A. Joullie
Journal of Vaccum Science Technology B, 21(5),
10.1116/1.1609478, (2003)
- Article de conférence
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⋄ Determination of the refractive indices of AlN, GaN, and Al xGa1-xN grown on (111)Si substrates
N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, J. Massies
J. Appl. Phys., 93(9),
5222-5226, (2003)
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⋄ Intraband spectroscopy of self-organized GaN/AlN quantum dots
A. Helman, F. Fossard, M. Tchernycheva, K. Moumanis, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelman, B. Daudin, D. Le Si Dang
Physica E, 17,
60, (2003)
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⋄ Two-dimensional « pseudo-donor-acceptor pairs » model of recombination dynamics in InGaN/GaN quantum wells
A. Morel, P. Lefebvre, T. Talierco, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Physica E, 17,
64, (2003)
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⋄ AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density
R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 39 (7),
626-628, (2003)
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⋄ MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, R. Aubry and S.L. Delage
J. Cryst. Growth, 251, Issues 1-4,
811-815, (2003)
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⋄ Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm
K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F.H. Julien, B. Damilano, J. Massies
Appl. Phys. Lett., 82,
868, (2003)
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⋄ Determination of AlxGa1-xN refractive indexes at low and room temperature, in the 300-600 nm range, for the optimisation of GaN-based microcavities
N. Antoine-Vincent, F. Natali, M. Mihailovic, P. Disseix, A. Vasson, J. Leymarie, D. Byrne, F. Semond, J. Massies
Phys. Stat. Sol. (a), 195, No.3,
543-550, (2003)
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⋄ RBS studies of AlGaN/AlN Bragg reflectors
L. Hirsch, F. Natali, P. Moretto, A.S. Barrière, D. Byrne, F. Semond, J. Massies, N. Grandjean, N. Antoine-Vincent, J. Leymarie
Phys. Stat. Sol. (a), 195, No.3,
502-507, (2003)
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⋄ Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)
F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Doghèche, E. Dumont
Appl. Phys. Lett., 82(9),
1386, (2003)
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⋄ High Pressure Study of the Electrical Transport Phenomena in AlGaN/GaN Heterostructures
Ch. Consejo, L. Konczewicz, S. Contreras, S. Lepkowsky, M. Zielinski, J.L. Robert, P. Lorenzini, Y. Cordier
Phys. Stat. Sol. (b), 235 (2),
232-237, (2003)
- Article de conférence
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⋄ Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots
A. Helman, K. Moumanis, M. Tchernycheva, A. Lusson, F. Julien, B. Damilano, N. Grandjean, J. Massies, C. Adelmann, F. Fossard, D. Le Si Dang, and B. Daudin
Mater. Res. Soc. Symp. Proc., 7,
169, (2003)
- Article de conférence
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⋄ High Al content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
F. Natali, D. Byrne, A. Dussaigne, N. Grandjean, J. Massies, B. Damilano
Appl. Phys. Lett., 82,
499, (2003)
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⋄ Microscopic description of radiative recombinations in InGaN/GaN quantum systems
A. Morel, P. Lefebvre, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Mater. Res. Soc. Symp. Proc., 743,
L5.5, (2003)
- Article de conférence
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⋄ GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters
D. Byrne, F. Natali, F. Semond, N. Grandjean, B. Damilano, J. Massies
Conference on Lasers and Electro-Optics Europe, 03TH8666,
178, (2003)
- Article de conférence
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⋄ Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments
A. Reale, G. Massari, A. Di-Carlo, P. Lugli, A. Vinattieri, D. Alderighi, M. Colocci, F. Semond, N. Grandjean, J. Massies
J. Appl. Phys., 93(1),
400-9, (2003)
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⋄ AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquiere, J.C. Dejaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.C. Grattepain, S.L. Delage
Phys. Stat. Sol. (a), N°1,
61, (2002)
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⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon
M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart
Phys. Stat. Sol. (b), 234,
887, (2002)
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⋄ Residual donors in wurtzite GaN homoepitaxial layers and heterostructures
G. Neu, M. Teisseire-Doninelli, C. Morhain, F. Semond, N. Grandjean, B. Beaumont, E. Frayssinet, W. Knap, A. M. Witowski, M. L. Sadowski, M. Leszczynski, P. Prystawko
Phys. Stat. Sol. (b), 235,
20, (2002)
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⋄ Silicon effect on GaN surface morphology
Z. Benzarti, I. Halidou, O. Tottereau, T. Boufaden, B. El Jani
Microelectronics Journal, 33(11),
995-998, (2002)
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⋄ AlN/AlGaN Bragg-reflectors for UV spectral range grown by molecular beam epitaxy on Si(111)
F. Natali, N. Antoine-Vincent, F. Semond,-F.; D. Byrne, L. Hirsch, A.S. Barriere, M. Leroux, J. Massies, J. Leymarie
Jpn. J. Appl. Phys, 41(10B),
L1140-2, (2002)
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⋄ High power AlGaN/GaN HEMTs on resistive silicon substrate
V. Hoël, N. Vellas, C. Gaquiere, J.S. Dejaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
Electron. Lett., 38,
750, (2002)
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⋄ Photoluminescence of GaN microcrystallites prepared by a new solvothermal process
C. Collado, G. Goglio, G. Demazeau, A.S. Barriere, L. Hirsch, M. Leroux
Mat. Res. Bull., 37,
841, (2002)
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⋄ Fmax of 490 GHz metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate
S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, A. Cappy
Electron. Lett., 38 N°8,
389, (2002)
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⋄ Resonant and nonresonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells
A. Vinattieri, D. Alderighi, J. Kudrna, M. Colocci, A. Reale, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 190,
87, (2002)
- Article de conférence
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⋄ Modelling and spectroscopy of GaN microcavities
N. Antoine-Vincent, F. Natali, P. Disseix, M. Mihailovic, A. Vasson, J. Leymarie, F. Semond, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 190,
187, (2002)
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⋄ The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
S. Kaliakos, P. Lefebvre, X.B. Zhang, T. Talierco, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (a), 190,
149, (2002)
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⋄ Properties of a hole trap in n-type hexagonal GaN
P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
J. Appl. Phys., 91(5),
2998, (2002)
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⋄ Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
S. Kaliakos, X.B. Zhang, T. Talierco, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, J. Massies
Appl. Phys. Lett., 80,
428, (2002)
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⋄ Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation
S.P. Lepkowski, T. Suski, P. Perlin, V.Yu. Ivanov, M. Godlewski, N. Grandjean, J. Massies
J. Appl. Phys., 91,
9622, (2002)
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⋄ Carrier dynamics in group-III nitride low-dimensional systems : localization versus quantum-confined Stark effect
P. Lefebvre, T. Talierco, S. Kalliakos, A. Morel, X.B. Zhang, M. Gallart, T. Bretagnon, B. Gil, N. Grandjean, B. Damilano, J. Massies
Phys. Stat. Sol. (b), 228,
65, (2001)
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⋄ Donor spectroscopy in wurtzite GaN heterostructures
G. Neu, M. Teisseire-Doninelli, C. Morhain
Proc. of the 26th ICPS, Inst. Phys. Conf. Series, 171,
19, (2001)
- Article de conférence
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⋄ Recombination dynamics in GaN/AlGaN quantum wells : the role of built-in fields
D. Alderighi, A. Vinattieri, J. Kudrna, M. Colocci, A. Reale, G. Kokolakis, A. Di Carlo, P. Lugli, F. Semond, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,
851, (2001)
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⋄ Large built-in electric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells
P. Perlin, T. Suski, S.P. Lepkowski, H. Teisseyre, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 188,
839, (2001)
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⋄ Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
P. Perlin, I. Gorczyca, T. Suski, P. Wiesniewski, S. Lepkowski, N.E.Christensen, A. Svane, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Phys. Rev. B, 64,
115319, (2001)
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⋄ Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy
P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart
Mat. Sci. Eng. B, 82,
91, (2001)
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⋄ Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
P. Lefebvre, T. Talierco, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78,
1538, (2001)
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⋄ Reduction of carrier in-plane mobility in group-III nitride based quantum wells : the role of internal electric fields
M. Gallart, P. Lefebvre, A. Morel, T. Talierco, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 183,
61, (2001)
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⋄ Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells
M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Mat. Sci. Eng. B, 82,
140, (2001)
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⋄ CW and time-resolved spectroscopy in homo-epitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy and using ammonia
T. Talierco, M. Gallart, P. Lefebvre, A. Morel, B. Gil, J. Allègre, N. Grandjean, J. Massies, I. Grzegory, S. Porowski
Sol. Stat. Comm., 117,
445, (2001)
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⋄ Optical properties of self-assembled InGaN/GaN quantum dots
T. Talierco, P. Lefebvre, A. Morel, M. Gallart, J. Allègre, B. Gil, H. Mathieu, N. Grandjean, J. Massies
Mat. Sci. Eng. B, 82,
22, (2001)
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⋄ High internal electric field in a graded-width InGaN/GaN quantum well : accurate determination by time-resolved photoluminescence spectroscopy
P. Lefebvre, A. Morel, M. Gallart, T. Talierco, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Appl. Phys. Lett., 78,
1252, (2001)
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⋄ Piezoelectric field and its influence on the pressure behaviour of the light emission from GaN/AlGaN strained quantum wells
S. P. Lepkowski, T. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies
Appl. Phys. Lett., 79,
1483, (2001)
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⋄ Potentialities of GaN-based microcanivities grown on silicon substrates
N. Antoine-Vincent, F. Natali, F. Semond, M. Leroux, N. Grandjean, J. Massies, J. Leymarie, A. Vasson
Phys. Stat. Sol. (a), 188,
519, (2001)
- …
|
⋄ Phonon-assisted optical transitions in GaN with impurities and defects
P. Tronc, Yu. E. Kitaev, G. Wang, M.F. Limonov, G. Neu
Physica B, 302-303,
291, (2001)
- …
|
⋄ In-situ etching at InGaAs/GaAs quantum well interfaces
E. Chirlias, J. Massies, J.L. Guyaux, H. Moisan, J.C. Garcia
J. Cryst. Growth, 222,
471, (2001)
- …
|
⋄ Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells
M. Gallart, A. Morel, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies
Phys. Stat. Sol. (a), 180,
127, (2000)
- …
|
⋄ Time-resolved spectroscopy of MBE-grown nitride based heterostructures
M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, N. Grandjean, J. Massies, M. Leroux, P. Bigenwald
Phys. Stat. Sol. (a), 178,
101, (2000)
- …
|
⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy
B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie
Phys. Stat. Sol. (a), 180,
363, (2000)
- …
|
⋄ Recombination dynamics in nitride quantum boxes and quantum wells for colors ranging from the UV to the red
Lefebvre,-P.; Morel,-A.; Gallart,-M.; Taliercio,-T.; Gil,-B.; Allegre,-J.; Mathieu,-H.; Grandjean,-N.; Damilano,-B.; Massies,-J.
Mater. Res. Soc. Symp. Proc., 639,
G10.1.1-11, (2000)
- Article de conférence - invité
|
⋄ Universal behaviour of the pressure coefficient of the light absorption and emission in InGaN structures
P. Perlin, T. Suski, P. Wisniewski, I. Gorczyca, S. Lepkowski, M. Hansen, S.P. Denbaars, B. Damilano, N. Grandjean, J. Massies
Mater. Res. Soc. Symp. Proc., 639,
G9.8, (2000)
- …
|
⋄ Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots
A. Morel, M. Gallart, T. Talierco, P. Lefebvre, B. Gil, J. Allègre, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Phys. Stat. Sol. (a), 180,
375, (2000)
- …
|
⋄ Photoluminescence of GaAs grown by metalorganic molecular beam epitaxy in space ultra-vacuum
A. Freundlich, C. Horton, M.F. Vilela, M. Sterling, A. Ignatiev, G. Neu, M. Teisseire
J. Cryst. Growth, 209,
435, (2000)
- …
|
⋄ Giant Atomic Swirl in Graphene Bilayers with Biaxial Heterostrain
F. Mesple, N.R. Walet, G. Trambly de Laissardière, F. Guinea, D. Dosenovic, H. Okuno, C. Paillet, A. Michon, C. Chapelier,
and V.T. Renard
Adv. Mater., ,
2306312, (203)
- Papier régulier
|
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
