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14 publications classées par date - Critères de recherche: Dalmasso

⋄ Pyramidal defects in highly Mg-doped GaN : atomic structure and influence on optoelectronic properties

M. Leroux, P. Vennéguès, S. Dalmasso, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart, J. Massies
Eur. Phys. J. Appl. Phys., 257, 259-262, (2004) - Article de conférence

⋄ Atomic structure of pyramidal defects in Mg-doped GaN

P. Vennéguès, M. Leroux, S. Dalmasso, M.B enaïssa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies and P. Gibart
Phys. Rev. B, 68, 235214, (2003) - Papier régulier

⋄ Optical characterization of AlxGa1-xN alloys (x < 0.7) grown on sapphire or silicon

M. Leroux, S. Dalmasso, F. Natali, S.Helin, C.Touzi, S. Laügt, M. Passerel, F. Omnès, F. Semond, J.Massies, P. Gibart
Phys. Stat. Sol. (b), 234, 887, (2002) -

⋄ Vertical cavity InGaN LEDs grown by MOVPE

P. De Mierry, J.M. Bethoux, H.P.D. Schenk, M. Vaille, E. Feltin, B. Beaumont, M. Leroux, S. Dalmasso, and P. Gibart
Phys. Stat. Sol. (a), 192, 335, (2002) - Article de conférence

⋄ Structural defects and relation with optoelectronic properties in highly Mg-doped GaN

M. Leroux, P. Vennéguès, S. Dalmasso, M. Benaïssa, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N.Grandjean, P.Gibart
Phys. Stat. Sol. (a), 192, 394, (2002) - Article de conférence

⋄ Injection dependence of the electroluminescence spectra of phosphor-free GaN-based white light emitting diodes

S.Dalmasso, B.Damilano, C.Pernot, A.Dussaigne, D.Byrne, N.Grandjean, M.Leroux, J.Massies
Phys. Stat. Sol. (a), 192(1), 139-143, (2002) - …

⋄ Influence of high Mg-doping on the microstructural and optoelectronic properties of p-type GaN

P. Vennéguès, M. Benaïssa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, P. Gibart
Mat. Sci. Eng. B, 93, 224, (2002) - Article de conférence

⋄ Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, S. Dalmasso, P. De Mierry, B. Beaumont, H. Lahrèche, A. Bouille, P. Gibart
Jpn. J. Appl. Phys, 40, L738, (2001) - …

⋄ Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE

S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Mat. Sci. Eng. B, 82, 256, (2001) - …

⋄ Pyramidal defects in Metal organic Vapor Phase Epitaxy Mg_doped GaN

P. Vennéguès, M. Benaïssa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, P. Gibart
Appl. Phys. Lett., 77, 880, (2000) - Papier régulier

⋄ MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization

S. Dalmasso, B. Damilano, N. Grandjean, J. Massies, M. Leroux, J.L. Reverchon, J.Y. Duboz
Thin Solid Films, 380, 195, (2000) - …

⋄ Green electroluminescent (Ga,InAl)N LEDs grown on Si(111)

S. Dalmasso, E. Feltin, P. De Mierry, B. Beaumont, P. Gibart, M. Leroux
Electron. Lett., 36(20), 1728, (2000) - Papier régulier

⋄ Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy

B. Damilano, N. Grandjean, J. Massies, S. Dalmasso, J.L. Reverchon, M. Calligaro, J.Y.Duboz, L. Siozade, J. Leymarie
Phys. Stat. Sol. (a), 180, 363, (2000) - …

⋄ Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots

N. Grandjean, B. Damilano, J. Massies S. Dalmasso
Sol. Stat. Comm., 113, 495, (2000) - Papier régulier