⋄ Time-Periodic Markers Revealing the Growth Mechanism of GaN Nanowires by Si-Assisted MOVPE
Julien Bosch, Philippe Vennéguès, Pierre-Marie Coulon, Philip A. Shields, Jesus Zúñiga-Pérez,
Maria Tchernycheva, Christophe Durand, and Blandine Alloing
Cryst. Growth Des., ,
, (2024)
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⋄ High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes
Kilian Baril; Pierre-Marie Coulon; Mrad Mrad; Nabil Labchir; Guy Feuillet; Matthew Charles;
Cécile Gourgon; Philippe Vennéguès; Jesus Zuniga-Perez; Blandine Alloing
J. Appl. Phys., 133,
245702, (2023)
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⋄ Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Giuseppe Greco, Patrick Fiorenza, Emanuela Schiliro, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte
Microelectron Eng, 276,
112009, (2023)
- Article de conférence
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⋄ Growth of (10-11) Semipolar GaN-Based Light-Emitting Diode Structures on Silicon-on-Insulator
Beatrice Wannous, Pierre-Marie Coulon, Ludovic Dupré, Fabian Rol, Névine Rochat, Jesus Zuniga-Perez, Philippe Vennéguès, Guy Feuillet, François Templier
Phys. Stat. Sol. B, 260,
2200582, (2023)
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⋄ Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE
Julien Bosch, Pierre-Marie Coulon, Sébastien Chenot, Marc Portail, Christophe Durand, Maria Tchernycheva, Philip A. Shields, Jesús Zúñiga-Pérez, Blandine Alloing
Cryst. Growth Des., 22,
5206, (2022)
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⋄ Metasurface-enhanced light detection and ranging technology
Renato Juliano Martins, Emil Marinov, M. Aziz Ben Youssef, Christina Kyrou, Mathilde Joubert, Constance Colmagro, Valentin Gâté, Colette Turbil, Pierre-Marie Coulon, Daniel Turover, Samira Khadir, Massimo Giudici, Charalambos Klitis, Marc Sorel & Patrice Genevet
Nat. Commun, 13,
5724 , (2022)
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⋄ Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires
K. W. Mauser, M. Solà-Garcia, M. Liebtrau, B. Damilano, P.-M. Coulon, S. Vézian, P. A. Shields, S. Meuret, and A. Polman
ACS Nano, 0,
0, (2021)
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⋄ Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
P.M. Coulon, P. Feng, B. Damilano, S. Vézian, T. Wang, P.A. Shields
Sci Rep., 10,
5642, (2020)
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⋄ Displacement Talbot Lithography for nano-engineering of III-nitride materials
P.M. Coulon, B. Damilano, B. Alloing, P. Chausse, S. Walde, J. Enslin, R. Armstrong, S. Vézian, S. Hagedorn, T. Wernicke, J. Massies, J. Zúñiga-Pérez, M. Weyers, M. Kneissl, P. A. Shields
Microsyst. Nanoeng., 5,
52, (2019)
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⋄ Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation
B. Damilano, P.-M. Coulon, S. Vézian, V. Brändli, J.-Y. Duboz, J. Massies, P.A. Shields
Appl. Phys. Express., 12,
045007, (2019)
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⋄ Dislocation filtering and polarity in the selective area growth of GaN nanowiresby continuous-flow metal organic vapor phase epitaxy
P.M. Coulon, B. Alloing, V. Brändli, P. Vennéguès, M. Leroux, and J. Zúñiga-Pérez
Appl. Phys. Express., 9,
015502, (2016)
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⋄ Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE:A systematic study on the effect of growthconditions on the array properties
P.M. Coulon, B. Alloing, V. Brändli, D. Lefebvre, S. Chenot,and J. Zúñiga-Pérez
Phys. Stat. Sol. B, 252,
1096, (2015)
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⋄ Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties
P.M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès, M. Leroux and J. Zúñiga-Pérez
J. Appl. Phys., 115,
153504, (2014)
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⋄ GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes
P.M. Coulon, M. Hugues, B. Alloing, E. Beraudo, M. Leroux, and J. Zúñiga-Pérez
Optics Express, 20,
18707, (2012)
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