Photo de Adrien Michon
Nom : Adrien Michon
Statut : Chercheur
Grade : CRCN
Équipe(s) : Electro   
: +33 4 93 95 4227

Activités


Croissance de graphène par CVD sur SiC:

  • étude de la croissance directe sur SiC
  • croissance de graphène sur de nouveaux substrats (3C-SiC/Si, saphir)
  • propriétés structurales et électronique du graphène

Publications (47)


⋄ CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

M. Portail, E. Frayssinet, A. Michon, S. Rennesson, F. Semond, A. Courville, M. Zielinski, R. Comyn, L. Nguyen, Y. Cordier, P. Vennéguès
Crystals, 12,  1605, (2022) - Papier régulier

⋄ Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material

M. Zielinski, M. Bussel, C. Moisson, H. Mank, S. Monooye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062,  140-145, (2022) - Article de conférence

⋄ Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride

M. Zielinski, M. Bussel, H. Mank, S. Monnoye, M. Portail, A. Michon, Y. Cordier
Mat. Sci. For., 1062,  84-88, (2022) - Article de conférence

⋄ Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications

Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon, Mathieu Koudia, Elie Assaf, Antoine Ronda, Paola Castrucci, Maurizio De Crescenzi, Holger Vach, and Mathieu Abel
ACS Appl. Nano Mater., 4,  4462, (2021) - Papier régulier

⋄ Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon

M. Zielinski, S. Monnoye, H. Mank, F. Torregrosa, G. Grosset, Y. Spiegel, M. Portail, A. Michon
Mat. Sci. For., 1004,  132, (2020) - Article de conférence

⋄ Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Giannazzo, Filippo; Dagher, Roy; Schilirò, Emanuela; Panasci, Salvatore; Greco, Giuseppe; Nicotra, Giuseppe; Roccaforte, Fabrizio; Agnello, Simonpietro; Brault, Julien; Cordier, Yvon; Michon, Adrien
Nanotechnology, 32,  015705, (2020) - Papier régulier

⋄ InGaN islands and thin films grown on epitaxial graphene

C. Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, A. Dussaigne and B. Hyot
Nanotechnology, 31,  405601, (2020) - Papier régulier

⋄ Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

E. Schilirò, F. Giannazzo, C. Bongiorno, S. Di Franco, G. Greco, F. Roccaforte, P. Prystawko, P. Kruszewski, M. Leszczyński, M. Krysko, A. Michon, Y. Cordier, I. Cora, B. Pecz, H. Gargouri, R. Lo Nigro
Mat Sci Semicon Proc, 97,  35-39, (2019) - Papier régulier

⋄ Kapitza thermal resistance characterization of epitaxial graphene-SiC(0001) interface

G. Hamaoui, R. Dagher, Y. Cordier, A. Michon, S. Potiron, M. Chirtoc, and N. Horny
Appl. Phys. Lett., 114,  1601, (2019) - Papier régulier

⋄ Silicene Nanostructures Grown on Graphene Covered SiC (0001) Substrate

I. Berbezier , A. Michon , P. Castrucci , M. Scarselli , M. Salvato , M. Scagliotti and M. De Crescenzi
Int. J. Nanosci., 18,  1940039, (2019) - Papier régulier

⋄ Al5+αSi5+δN12, a new Nitride compound

R. Dagher, L. Lymperakis, V. Delaye, L. Largeau, A. Michon, J. Brault & P. Vennéguès
Sci Rep., 9,  15907, (2019) - Papier régulier

⋄ High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors

F. Giannazzo, G. Greco, E. Schilirò, R. Lo Nigro, I. Deretzis, A. La Magna, F. Roccaforte, F. Iucolano, S. Ravesi, E. Frayssinet, A. Michon, Y. Cordier
ACS Appl. Electron. Mater., 1,  2342, (2019) - Papier régulier

⋄ Remote epitaxy using graphene enables growth of stress-free GaN

T Journot, H Okuno, N Mollard, A Michon, R Dagher, P Gergaud, J Dijon, A V Kolobov and B Hyot
Nanotechnology, 30,  505603, (2019) - Papier régulier

⋄ A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations

R. Dagher, E. Blanquet, C. Chatillon, T. Journot, M. Portail, L. Nguyen, Y. Cordier and A. Michon
Cryst. Eng. Comm., 20,  3702-3710, (2018) - Papier régulier

⋄ Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching

D. Allioux, A. Belarouci, D. Hudson, E. Magi, M. Sinobad, G. Beaudin, A. Michon, N. Singh, R. Orobtchouk, and C. Grillet
Photonics Res., 6, 5,  B74-B81, (2018) - Papier invité

⋄ High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

R. Dagher, S. Matta, R. Parret, M. Paillet, B. Jouault, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, S. Tanaka, J. Brault, Y. Cordier, and A. Michon
Phys. Stat. Sol. A, 214(4),  1600436, (2017) - Papier régulier

⋄ CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut

R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon
Mat. Sci. For., 897,  731 - 734, (2017) - Papier régulier

⋄ Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

M. Nemoz, R. Dagher, S. Matta, A. Michon, P. Vennéguès, J. Brault.
J. Cryst. Growth, 461,  10-15, (2017) - Papier régulier

⋄ Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

F. Giannazzo, G. Fisichella, G. Greco, E. Schiliro, I. Deretzis, R. Lo Nigro, A. La Magna, F. Roccaforte, F. Iucolano, S. Lo Verso, S. Ravesi, P. Prystawko, P. Kruszewski, M. Leszczynski, R. Dagher, E. Frayssinet, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 215(10),  1700653, (2017) - Papier régulier

⋄ Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC

B. Jouault, S. Charpentier, D. Massarotti, A. Michon, M. Paillet, J. R. Huntzinger, A. Tiberj, A.-A. Zahab, T. Bauch, P. Lucignano, A. Tagliacozzo, F. Lombardi and F. Tafuri
J. Supercond. Nov. Magn., 29,  1145, (2016) - Papier régulier

⋄ Incipient Berezinskii-Kosterlitz-Thouless transition in two-dimensional coplanar Josephson junctions

D. Massarotti, B. Jouault, V. Rouco, S. Charpentier, T. Bauch, A. Michon, A. De Candia, P. Lucignano, F. Lombardi, F. Tafuri, and A. Tagliacozzo
Phys. Rev. B, 94,  054525, (2016) - Papier régulier

⋄ p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet, H. Peyre
Mat. Sci. For., 858,  137-142, (2016) - Article de conférence - invité

⋄ Graphene integration with nitride semiconductors for high power and high frequency electronics

F. Giannazzo, G. Fisichella, G. Greco, A. La Magna, F. Roccaforte, B. Pecz, R. Yakimova, R. Dagher, A. Michon, Y. Cordier
Phys. Stat. Sol. A, 214,  1600460, (2016) - Papier régulier

⋄ Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, F. Cheynis, O. Couturaud, C. Consejo, B. Jouault, W. Poirier and F. Schopfer
Nat. Nanotechnol., 10,  965–971, (2015) - Papier régulier

⋄ Structural investigation of Si quantum dots grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) epilayers

R. Dagher, R. Khazaka, S. Vézian, M. Teisseire, A. Michon, M. Zielinski, T. Chassagne, Y. Cordier, M. Portail
Mat. Sci. For., 821-823,  1003, (2015) - Article de conférence

⋄ Influence of site competition effects on dopant incorporation during chemical vapor deposition of 4H-SiC epitaxial layers

R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, H. Peyre
Mat. Sci. For., 821-823,  149, (2015) - Article de conférence

⋄ Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

F. Lafont, R. Ribeiro-Palau, D. Kazazis, A. Michon, O. Couturaud, C. Consejo, T. Chassagne, M. Zielinski, M. Portail, B. Jouault, F. Schopfer and W. Poirier
Nat. Commun, 6,  6806, (2015) - Papier régulier

⋄ Investigation of Aluminium incorporation in 4H-SiC epitaxial layers

R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet and H. Peyre
Mat. Sci. For., 45,  806, (2015) - Article de conférence

⋄ Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

B. Jabakhanji, A. Michon, C. Consejo, W. Desrat, M. Portail, A. Tiberj, M. Paillet, A. Zahab, F. Cheynis, F. Lafont, F. Schopfer, W. Poirier, F. Bertran, P. Le Fèvre, A. Taleb-Ibrahimi, D. Kazazis, W. Escoffier, B.C. Camargo, Y. Kopelevich, J. Camassel,
Phys. Rev. B, 89,  085422, (2014) - Papier régulier

⋄ Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, and Y. Cordier
Appl. Phys. Lett., 104,  071912, (2014) - Papier régulier

⋄ Magnetoresistance of disordered graphene: From low to high temperatures

B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
Phys. Rev. B, 90,  035423, (2014) - Papier régulier

⋄ Investigation of structural and electronic properties of epitaxial graphene on 3C-SiC(100)/Si(100) substrates

N. Gogneau, A. Ben Gouider Trabelsi, M. Silly, M. Ridene, M. Portail, A. Michon, M. Oueslati, R. Belkhou, F. Sirotti, A. Ouerghi
Nanotechnology, Science and Applications, 85,  7, (2014) - Papier régulier

⋄ Structural trends in Si dots formation on SiC surfaces using CVD environment

M. Portail, S. Vézian, M. Teisseire, A. Michon, T. Chassagne, M. Zielinski
J. Cryst. Growth, 157,  404, (2014) - Papier régulier

⋄ Thermal Management for High-Power Single-Frequency Tunable Diode-Pumped VECSEL Emitting in the Near- and Mid-IR

M. Devautour, A. Michon, G. Beaudoin, I. Sagnes, L. Cerutti, A. Garnache
IEEE J Sel Top quantum Electron, 19,  1701108 - 1701108, (2013) - Papier régulier

⋄ X-ray diffraction and Raman spectroscopy study of strain in graphenefilms grown on 6H-SiC(0001) using propane-hydrogen-argon CVD

A. Michon, L. Largeau, A. Tiberj, J.R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail
Mat. Sci. For., 740-742,  117, (2013) - Article de conférence

⋄ Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
J. Appl. Phys., 113,  203501, (2013) - Papier régulier

⋄ CVD growth of graphene on 2inches 3C-SiC/Si templates: influence of substrate orientation and wafer homogeneity

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, A. Ouerghi, M. Zielinski, T. Chassagne, Y. Cordier
Mat. Sci. For., 717-720,  621, (2012) - Article de conférence

⋄ Graphene/SiC interface control using propane-hydrogen CVDon 6H-SiC(0001) and 3C-SiC(111)/Si(111)

A. Michon, E. Roudon, M. Portail, D. Lefebvre, S. Vézian, Y. Cordier, A. Tiberj, T. Chassagne, M. Zielinski
Mat. Sci. For., 711,  253, (2012) - Article de conférence

⋄ Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot, E. Roudon, M. Zielinski, T. Chassagne, A. Tiberj, J. Camassel, Y. Cordier
J. Cryst. Growth, 349,  27, (2012) - Papier régulier

⋄ Structural and electrical properties of graphene films grown by propane/hydrogen CVD on 6H-SiC(0001)

A. Michon, E. Roudon, M. Portail, B. Jouault, S. Contreras, S. Chenot, Y. Cordier, D. Lefebvre, S. Vézian, M. Zielinski, T. Chassagne, and J. Camassel
Mat. Sci. For., 717-720,  625, (2012) - Article de conférence

⋄ Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail and D. Alquier
J. Appl. Phys., 111,  053507, (2012) - Papier régulier

⋄ Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain

A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, and M. Portail
Phys. Stat. Sol. C, 9,  175-178, (2011) - Article de conférence

⋄ Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers

A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla
Phys. Rev. B, 83,  205429, (2011) - Papier régulier

⋄ Analytical model of stress relaxation in 3C-SiC layers on silicon

M .Zielinski, F.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin, A. Michon, M. Portail, D. Alquier
Mat. Sci. For., 679-680,  79, (2011) - Article de conférence

⋄ Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, and M. Portail
Appl. Phys. Lett., 97,  171909, (2010) - Papier régulier

⋄ Evaluation of the Crystalline Quality of Strongly Curved 3C-SiC/Si Epiwafers Through X-Ray Diffraction Analyses

M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J.F. Michaud, and D. Alquier
AIP Conf Proc, 1292,  115, (2010) - Article de conférence

⋄ Thermodynamical analysis of the shape and size dispersion of In As / In P ( 001 ) quantum dots

A. Michon, I. Sagnes, G. Patriarche, G. Beaudoin, M. Mérat-Combes, G. Saint-Girons
Phys. Rev. B, 73,  16, (2006) - Papier régulier

Contrats en cours


⋄ Graphene Quantum Impedance Standard (2019 - 2022)

Étalons quantiques d’impédance à base de graphène (EMPIR-EURAMET) - Projet Européen
Partenaires: PTB, CMI, INRIM, LNE, METAS, RISE, VTT, NIMT, KRISS (instituts nationaux de métrologie d’Allemagne, Tchécoslovaquie, Italie, France, Suisse, Suède, Finlande, Thaïlande, Corée du Sud), POLITO, C2N, CRHEA

⋄ ETMOS (2020 - 2022)

Epitaxial Transition Metal dichalcogenides Onto wide bandgap hexagonal Semiconductors for advanced electronics (FLAG-ERA) - Projet Européen
Partenaires: CNR-IMM, CNRS-CRHEA, SAS-IEE, HAS-MFA, University of Palermo (U- Pa)

⋄ PlaGGe (2021 - 2024)

Croissance de graphène sur germanium - Graphene growth on germanium (Région) - Projet Régional
Partenaires: CRHEA, IM2NP

Contrats terminés


⋄ GraphMet (2016 - 2021)

Etalons quantiques en graphène pour les unités électriques du Si (ANR) - Projet National
Partenaires: LNE, CRHEA, L2C, C2N, Néel, INAC

Encadrements en cours


Chiara Mastropasqua (Doctorant)

Encadrements terminés


Roy Dagher (Doctorant) (2017)

Post-doc


Etude du transport vertical dans des hétérostructures de nitrures d'éléments III (Institut d'Electronique Fondamentale – Orsay)
Réalisations de structures demi-VCSEL pompés électriquement dans la filière GaAs (Laboratoire de Photonique et Nanostructures – Marcoussis)

Thèse


Etude de la croissance de boîtes quantiques InAs/InP(001) par épitaxie en phase vapeur aux organométalliques pour des applications à 1,55 µm (Laboratoire de Photonique et Nanostructures – Marcoussis)

Cursus


Licence et Maîtrise de Physique Fondamentale
DEA et Doctorat de Sciences des Matériaux
Université Pierre et Marie Curie – Paris 6